CN1015585B - 半导体器件的自对准电极 - Google Patents
半导体器件的自对准电极Info
- Publication number
- CN1015585B CN1015585B CN89106979A CN89106979A CN1015585B CN 1015585 B CN1015585 B CN 1015585B CN 89106979 A CN89106979 A CN 89106979A CN 89106979 A CN89106979 A CN 89106979A CN 1015585 B CN1015585 B CN 1015585B
- Authority
- CN
- China
- Prior art keywords
- alignment device
- tube core
- welding material
- lead
- jockey
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
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Abstract
本发明使用一管芯的片状引线框架和框架与半导体管芯焊接区之间的独立连接片,改进了制造功率器件引线的装置和方法。引线框架有一对准槽,用以同连接片一端的对准装量配合,连接装置另一端置于管芯接触区上。在管芯与引线框架、连接装置和接触区、配对的对准装置之间填加焊料。焊料熔化后,管芯和连接片浮于其上,并靠表面张力自行对准,使管芯和连接片分别处于支撑件和焊接区中心,而连接片和框架上的配合对准区彼此吻合。
Description
本发明一般涉及电子器件,尤其涉及为半导体或其他电子芯片提供引线的装置和方法的改进。这里所说的器件指各种应用这里所述的连接装置和引线的集成电路以及各种电子器件,而不限于以半导体为基底的器件。
在电子领域,特别是半导体器件和电路的领域中,通常为主要执行信号处理功能的器件提供重量轻的引线,而为传输大电流的器件提供重引线。细导线的线焊接和金属箔片的接头片焊接技术通常被用在信号处理器件上,这样的导线和箔片一般只能传输微安或毫安级的电流,其典型厚度只有零点几个密耳或几个密耳。它们通常直接焊接到器件的焊接区上。
对于传输较大电流的器件,例如功率二极管和晶体管,或集成电路,往往需要流过从几安培到几十安培或几百安培的电流,所以,焊到这些器件上的引线要粗一些,通常用从几十到几百密耳粗的金属引线,它们往往通过低温焊接(soldering)与器件的焊接区相连接。
当使用这样粗的引线时,引线与管芯或其他电子器件上的焊接区的对准是很困难的,而且要在焊接过程中保持这种对准也不容易。如果引线与管芯上的焊接区没有对准,就会降低生产的成品率和可靠性。
所以,本发明的目的之一就是为制造功率器件提供一种改进了的装置和方法,其中至少有一条引线与引线框和待连接引线的管芯上的焊接区自对准。
本发明的另一个目的是为制造功率器件提供一种改进了的装置和方法,其中,管芯被安装在一个引线框架上,由自对准接触片提供到器件上任一焊接区的连接,该接触片跨接在管芯与引线框架其它部分之间。
本发明还有一个目的是为制造功率器件提供一种改进了的装置和方法,其中引线框和自对准接触片都有在装配过程中使接触片与引线框对准的配合表面。
本发明又一个目的是为制造功率器件提供一种改进了的装置和方法,其中,在装配过程中,自对准接触片部分地在电连接材料(coupling material)上浮动,以便把它同引线框架连接起来。
本发明再一个目的是为制造功率器件提供一种改进了的装置和方法,其中,在装配过程中,管芯也来回浮动,并且使其相对于接触片和引线框架上安置管芯的部位自对准。
本发明的一个附加目的是为制造功率器件提供一种改进了的装置和方法,其中,自对准是自动实现的。
这里所用的焊料一词指任何导电的粘合材料,这些材料是半固态的或者至少在焊接过程中有时部分为液态的物质,例如:常规金属、金属合金、含环氧树脂的金属、其它导电塑料或类似物。
这里所说的芯片或管芯是指电子元件,例如:二极管、晶体管、闸流管、集成电路、电阻、电容以及具有至少一个焊接区域的其他类
似的元件,但并不局限于上述元件。
通过本发明即可达到上述的以及其它目的,并具有各种优点。本发明包括一个电子芯片、一个引线装置和一个连接装置。电子芯片的第一表面用以同引线装置连接,第二表面上有一用以同连接装置相连接的焊接区;引线装置的第一部分用以装配电子芯片,第二部分包括用以同连接装置对准的第一对准装置;连接装置用以连接引线装置和电子芯片,其中,连接装置具有与焊接区相耦合的第一部分以及带有第二对准装置的第二部分,第二对准装置同第一对准装置相配合,用以使连接装置位于引线装置和焊接区之间,並与之对准。
焊接区和连接装置的第一部分之间用第一种焊料连接,第一和第二对准装置之间用第二种焊料连接,电子芯片和引线装置的第一部分之间用第三种焊料连接。第一种和第二种焊料,最好也包括第三种焊料,应该有一个可控状态,在这一状态中,焊料至少部分是液态的。以便管芯和连接装置能在其上浮动,从而彼此自行对准,同时也与引线装置自对准。
连接装置的第一部分由管芯的焊接区支撑,连接装置的第二部分装配在第一对准装置之上。第一对准装置和第二对准装置在引线装置和连接装置上分别具有配对的凹陷或凸起形状,这种形状应该允许连接装置相对于引线装置作横向的或纵向的移动,或者竖直转动,但不允许连接装置有水平转动。
如上所述的包括一个电子元件在内的器件,一般通过下列步骤获得:提供一个容纳电子元件的支撑件;提供一个具有第一对准装置的引线装置,第一对准装置用以容纳连接装置,该连接装置带有与之相配合的、使得引线装置和连接装置之间相互对准的第二对准装置;提
供一连接装置,其具有与第一对准装置配合的第二对准装置及与电子元件相连接的第一固定装置;在支撑件和电子元件之间添加第一焊接材料;在第一对准装置和第二对准装置之间添加第二焊接材料;在固定装置和电子元件之间添加第三焊接材料;暂时使连接装置在第二和三焊接材料上方浮动;最后,使第二和第三焊接材料凝固。
第一焊接材料可以在第二或第三焊接材料之前提供,或与第二焊接材料同时提供,或者与第二和第三焊接材料同时提供。
要求电子元件能在第一焊接材料上暂时地浮动,同时,连接装置也能在第二、第三焊接材料上暂时地浮动,以便通过控制引线装置和连接装置上的对准装置使电子元件和连接装置彼此对准,并且与支撑件和引线装置对准。
还要求在引线装置上以第一凹陷或凸起形式提供第一对准装置,在连接装置上用与第一对准装置相配合的凸起或凹陷的形式提供第二对准装置。第二对准装置放在第一对准装置之上(其间用第二焊接材料连接),靠重力和表面张力使其保持不动,直到焊接材料凝固。在浮动过程中至少还需要振动支撑件。
引线装置、支撑件和连接装置的设置以及对三种焊接材料及其相对数量的选择应该使得熔化的焊接材料的表面张力能够使连接装置与引线装置对准,使连接装置的固定部分之下的管芯处于中心位置,最终使得管芯和在管芯焊接区之上的连接装置的固定部分处于中心位置,这样,就能使这些部分自动对准。
参见下面的附图及其说明,就能充分了解上述及其它优点,并能更完整地理解本发明的宗旨。
图1是按照现有技术制造的电子器件的俯视图,其中一部分被剖
开。图2是图1所示部位的截面图。
图3是按照本发明制造的电子器件的局部俯视图,图4-5是按图3所示部位的截面图。
图6是按照本发明另一个实施例制造的电子器件局部俯视图,其中部分被剖开。图7是图6所示部位的截面图。
图8是按照本发明再一个实施例制造的电子器件的局部俯视图,其中部分被剖开。图9是图8所示部位的截面图。
图10是一个具有多个单元的电子引线框架的俯视图,示出按照本发明的方法的一个实例。
图1所示是按照现有技术制造的电子器件的局部剖俯视图,图2是元件10的截面图。以一个半导体器件为例,它包括具有管芯焊接区域(相当于本发明的管芯底座)13的管芯支撑件12、电子管芯(例如半导体芯片)16和引线14。在现有技术中,管芯支撑件12和接触引线多以金属制成,铜就是其中一例。
管芯16通过焊接材料19而被固定在管芯支撑件12上。焊接材料26(例如,某种焊料)把管芯16的接触部分22与引线14连接起来。由图中可以看出,在管芯16的上面,围绕着接触部分22有一层绝缘材料18,但这不是必须的。
如果管芯16是半导体功率器件或别的必须通过一安培到数百安培电流的电子元件,管芯支撑件12和引线14通常用比较厚的金属制成,例如,厚度为十到几百个密耳(0.25至几个毫米)的铜或柯伐(Kovartm)或其它金属。这种引线比较硬,在生产中,可能使管芯底座、管芯以及引线的对准成为问题。而且,图1-2所示的现有技术还有一个缺点,那就是焊料26容易溢到绝缘材料18上,这
直接影响了生产的成品率和产品可靠性的提高。
图1-2中所示的现有技术的装置也是很难装配的,因为支撑件12和引线14必须互相交叠把管芯16夹在中间。在这种情况下,管芯16被焊接到管芯底座13上以后,引线14必须从引线框架的其它部分折叠过来或分别提供,这两种操作都需要附加的步骤,并必须谨慎地把引线14适当对准在管芯16和管芯底座13上。
这些以及其它存在于现有技术中的问题都可以通过本发明得到解决。图3所示是本发明第一实施例的俯视图,图4是其截面图,图5是和图4相似的截面图,但它示出的是另一个实施例。
现在说明图3-5。管芯16通过焊接材料20装配到管芯底座13上,其接触区域22被凸起的绝缘材料18包围在中间。焊接材料20可以是导电的,也可以是绝缘的。如果用支撑件12、底座13作为与管芯16相连接的一条引线,那么,通常用导电的焊料作为焊接材料。
提供引线30和50向管芯16延伸,用它们作为管芯的外部连线。为方便起见,对准装置32和52置于引线30和50最靠近管芯16的一端。在图3-5所示的例子中,引线30和50上的对准装置32和52的形状是向下凹陷的,也可以采用别的形状(例如凸起)。在图3-4中,对准装置32基本上是一个半圆柱型的槽或别的二维图形为圆形、其第三维沿与引线30和管芯16连线相垂直的方向延伸的形状。图5中,对准装置52的两维形状是V形槽或类弯折凹陷形,其第三维沿与引线50到管芯16连线相垂直的方向延伸。图中所示的对准装置32、42和52、62是向下凹陷的,也可以是向上凸起的。
图3-5中,连接装置或连接片40、60从引线30、50延伸到管芯16上的接触区域22。连接片或连接装置40和60与引线30和50上的对准装置32和52相连的一端有对准装置42和62,另一端是连接到管芯接触区域焊接区22上的固定装置46和66。对准装置42和62的形状与对准装置32和52相吻合。由图3可以看出,对准装置32、52和42、62的槽形结构使得连接装置40和60能沿与引线30和50到管芯16接触区22的连线相垂直的方向移动,但不能在指向接触区22的方向上相对于引线30、50和管芯接触区22移动,也不能在图3所示的水平面内相对于引线30、50或焊接区22转动。但在装配过程中,连接装置40、60却可以在竖直平面(即图4,5所示平面)内转动。这正是所期望的,图为这样可以在待安装的管芯16的厚度发生各种实质性变化时,不用改变引线框架或连接装置,从而简化了生产过程。图4所示的结构对达到此目的是特别有用的,因为对准装置32和42的嵌套弯折表面形成了一个可转动的枢纽。使得在未改变对准装置32和42空间位置的条件下,连接装置40能相对于引线30在竖直平面内转动。从这方面来说,连接装置40靠近接触区22的一端也应该是弯曲的,如图4中的固定装置46所示。
连接装置40和60具有固定装置46和66,用以同管芯接触区22相连接。图4表示了固定装置46具有略具圆形的底部48的情形,图5所示的固定装置66的底部68基本上是扁平的。在两种情况下,固定装置46和66都必须朝管芯接触区22凸起,以免焊料溢出到绝缘材料18的表面上。固定装置46和66可以是半圆柱形式其它基本上为轴对称的形状,也可以是半椭球形或别的三维形
状,如卡尔福斯(Kalfus)等人所解释的。
连接片40和60通过焊接材料36和56与引线30和50连接,并通过焊接材料38和58与管芯接触区22相连。导电性焊料即可作为适当的焊接材料使用。焊接材料36、56和38、58必须能同时被液化或同时保持液态,而且与此同时,管芯的焊接材料20也必须保持液态。焊接材料20可以为导电材料,但这不是必须的,因为在很多情况下,可以在管芯上的其它地方做出连接到引线端(图中没有画出)的接触区。
如果材料20、36、56和38、58是焊料,那么必须选择熔点相同的材料。如果这些固定或焊接材料中的一种或多种是玻璃或塑料(不管是否导电),那么它们在装配过程中必须在其他导电性焊接材料为液态或部分液态的同时也暂时地,至少部分地处于液态。换句话说,固定或焊接材料具有一个共同的状态是很重要的,例如在一个共同的温度范围内或在共同的焊接条件下,或其它共同条件下,它们处于半固态或至少部分液态。
焊接材料的完全熔化是人们所期望的,但并不是必要的,最低限度是,焊接材料必须充分熔化以使连接片(最好还有电子器件)能在半固态或部分液态的焊接材料上浮动,并能相对于支撑件12、引线30和50自由地作横向移动。正如后面将要详细描述的那样,在支撑件12、引线30、50以及管芯16与连接片40、60之间装上各种焊接材料后,使各种不同的焊接材料暂时地熔化或处于液态,以便连接片40、60能在液化了的焊接材料36、56和38、58上浮动,以及使管芯16能在液化了的焊接材料20上浮动。这样,靠表面张力和相匹配的对准装置的作用,使管芯、连接片和引线自行
对准。如果管芯的焊接材料和连接片的焊接材料能同时处于液态,即可获得最佳效果,那么,即使只有连接片的焊接材料同时处于液态,也能获得一些改善。
我们发现选取金属合金材料作为焊料非常适用,当然,也可选取其它材料。在焊料的选取中,重要的是选取的材料要易于沾润引线但不易于沾润管芯上不需要与引线或焊料相接触的临近焊接位置的区域,因为导电引线通常是电导率很高的金属,而管芯的临近区域通常为钝化绝缘材料所覆盖,所以在这些位置上,所选取的焊料最好要优先沾润这样的金属而不会明显地沾润钝化绝缘材料。就这方面来说,金属合金焊料通常比我们所知道的大部分导电塑料和玻璃更好。
图6-9示出本发明另一个实施例,图6和图8是类似于图3的局部俯视剖面图,图7和图9是类似于图4-5的截面图。在图6和图8中,使用焊接材料20将管芯16安装在支撑件12的底座13上。同前面所述一样,管芯16的接触区或焊接区22是朝上的。
引线70、90和焊接区22通过连接片80、100连接起来。如图6-7所示,引线70的对准装置72是向下凹陷的,其长轴方向指向管芯16和焊接区22,连接片80的对准装置82的底部和两侧84与对准装置72的底部和两侧面74吻合。但对准装置82比对准装置72短一些,以便连接片80能在指向管芯焊接区22的方向上移动,但不能在与此方向垂直的方向上移动,也不能相对于引线70和焊接区22水平地移动。若对准装置72的长、宽和82的长、宽大体相同,那么引线70和连接片80之间在任何方向上都不能相对运动。导电性的焊接材料76,如某种焊料,把对准装
置72和82连接起来。
连接片80的一端向下凸起形成区域86,其底部88通过焊接材料78与焊接区22焊接起来。底部88大体是扁平的或球状的。如图6-9所示,固定区域86比焊接区22的面积大,在这种情况下,区域86必须是凹陷的,也就是说,向接触区22凸起,以便当86的底部88偏离焊接区22的中心时,使固定区域的下表面88和绝缘材料18的上表面之间保持一定的距离。这样可以避免焊接材料溢出到18的表面上,这在上面所提到的卡尔福斯等人的共同申请中有详细描述。
图8-9所示为本发明的另一个实施例,其中,引线90上的对准装置92和连接片100上的对准装置102基本上是旋转对称的。对准装置92的底部和侧面94与对准装置102的底部和侧面104相吻合。这种设计使连接片100和引线90之间可相对转动,但不能相对作横向运动。引线90和连接片100通过导电的焊接材料96连接起来。
从以上的叙述可知,可以选择允许对准装置相对运动的自由度,来适应管芯的位置和在生产过程中可能出现的引线对准误差的类型。本领域普通技术人员将会了解,基于这里的描述,再结合他们具体的环境,可以明白究竟图示中的哪一种实施例最能满足他们的要求。
图10说明了本发明的方法,引线框架120分为六个独立部分120A-F,每一部分说明按照本发明制造电子器件的一个步骤。本领域普通技术人员应很清楚,在实际过程中,引线框架120的各部分120A-F都要经过一组不同步骤的处理。在120A-F的每一部分中示出的不同步骤只不过是为了使说明更简要。
取一个硅整流器管芯作为样品,其横向大小为37×37到105×105密耳(0.94到2.7mm2),四周为隆起的绝缘材料所包围,如卡尔福斯等人所述。焊接区22的典型尺寸为29到94平方密耳(0.74到2.4mm2)。
引线框架120与图3和图5所示的形状相符,但正如本领域普通技术人员将了解的那样,这只是为了说明的方便,并不局限于此,任何已描述的引线和连接片的形状或与其等价的形状都可应用。引线框架120上有常规的框条122、124和带有工位孔126的边框128。
在120A中,提供了具有管芯底座13的支撑件12和具有对准装置52的引线50。在图示中,是假定由支撑件12和底座13完成与管芯16一个侧面的电接触。不过,本领域普通技术人员都知道这不是必要的,即支撑件12和底座13可以仅作为管芯16的机械支撑或传热装置。底座13的典型大小为80×90到115×135密耳(2.0×2.2到2.9×3.4mm2),引线框架120的典型厚度为5-15密耳(0.13到0.38mm)或更大一些。
120B中,管芯焊接材料20被加在管芯底座13上。一般均使用一种钎焊焊剂或钎焊锭料作为焊接材料20。对于硅半导体管芯,这种焊剂的成分取为88∶10∶2(Pb∶Sn∶Ag)是合适的。但也可以使用其它公知的焊接材料。把大约0.5到3.0毫克的焊剂涂在底座13上就可形成令人满意的焊接材料20,但数量上多一点或少一点也可以。考虑到不同的焊接区域的相对大小,可以使用数量大致相同的同种焊剂作为焊接材料56和58。
在120c中,管芯16被安装在焊接材料20上,引线焊接材料58的提供可以作为这一生产步骤的一部分,也可以在以后的步骤中添加。这里故意把管芯16画得与底座13稍有些未对准,以便说明本发明的结构和方法所产生的自对准作用。
如果焊接材料56、58还没有涂上,那么现在涂上是很方便的。前面所述的焊剂的成份对焊接材料56和58都是适用的,其数量根据焊接区22的大小来确定,一般情况下和前面所述数量相似或略少。
在步骤120D,把连接片60放到焊接材料56和58上,铜制的连接片60的厚度取为5到15密耳(0.13到0.48mm)或略厚一点都是合适的。焊接区固定装置66必须比焊接区22窄5-15密耳(0.13-0.38mm)。连接片60和对准装置62可以比引线50略微窄一些,但这不是必须的。虽然在图中没有表示出来,但图6-9所描述的各类连接片同样能在这里得到很好的结果。
对准装置62置于对准装置52上的焊接材料56之上,固定装置66置于接触区22上的焊接材料58之上。管芯16及连接片60不必完全精确地放置,在120D中,连接片60故意相对于管芯16和引线50有略微的未对准,用以说明本发明的自对准功能。
当装配完毕的管芯、连接片、引线框架以及其间的焊接材料被加热时,管芯16在20上浮动,连接片60在焊料56和58上浮动,槽62和52完全吻合。对上面所说的焊剂,加热到大约340℃的最高温度持续三分钟就可以了。米尔瓦基(Milwaukee)市的林德堡(Lindberg)公司生产的具有两吋宽的带子的二十呎长、
四区燃氢带式加热炉WI可以用来熔化焊剂,不过用其它的炉子也行。在可控的保护气氛中熔化焊剂的装置和方法在本领域中是公知的。
对准装置52和62之间焊料浸润的接触面设计得比管芯焊接区22和固定装置66之间的,或管芯16和底座13之间的要大,这保证了将连接片60和引线50上的槽52相对准的表面张力占主导地位。这样,连接片60自动地趋于引线50的中心,并且,由于对准装置52的作用,连接片60正好也指向底座13的中心。
因为底座13基本上被焊料20所覆盖,所以管芯16在20上没有一个非常优先的位置,它能滑到覆有焊料的任何部位,但不会超出焊料的边缘。只要焊接材料处于液态,管芯16就能在底座13上焊料所沾润的区域内移动。
当焊料熔化时,连接片60上的固定装置66和管芯焊接区22被熔化的焊料58连接起来。因为连接片60靠近焊接区22的那个部分66比焊接区22略小,并且固定装置66沿其周边离开焊接区22向上弯曲,所以,管芯焊接区22和固定装置66趋于自对准,使66正好处于22的中心。
由于连接片60被对准装置52、62和其间的表面张力所限制,在管芯16和管芯底座13上滑动以便使22处于固定装置66中心时,连接片60也必然保持在引线50的中心位置。这样,焊接材料20、56和58处于液态时,在它们上面浮动的管芯16、连接片60和引线50的组合运动使这几个部分自动对准。这就是图120E所示的情形。
焊接材料一熔化,自对准就开始了。之后,冷却该组件使焊接材
料凝固,从而把各部分连接起来并保持对准好的位置。
在120F中,示出包覆在已装配好的部分上的封装材料130的压制件,这是众所周知的常规工艺。封装以后,去掉框条122、124和边框128,得到一个完整的元件,这些操作都是常规工艺。
在焊料熔化操作中,要轻轻地摇动各部分以便于浮动和滑动运动,这种运动同表面张力和对准装置结合起来使得各部分自行对准。摇动量不必太大,由焊料回流炉中移动的金属带所引入的震动就足够了。
在120B-C所示的固定管芯的步骤中,焊接材料基本上覆盖住底座13,但这不是必须的。在13的中心涂上一滴焊剂,在把管芯16放于其上以后,焊剂就被挤压而水平地散向四周,这样同样会得到很好的结果。不过,这样做时,必须十分小心地把焊剂和管芯置于13的中心,因为底座13上沾润有焊剂的面积的任一点减少都会使焊料熔化和自对准过程中管芯16可以在其上滑动的面积减小。
正如所描述的那样,禁止水平面内转动的引线对准装置和连接片是人们所需要的,因为连接片的水平转动会削弱连接片与管芯相连的一端和管芯底座中心对准的趋势。这样,就对准装置而言,图3-7所示的设置比图8-9所示的设置要好一些。本发明的所有结构都允许连接片在竖直平面内相对于引线和管芯作转动,以适应管芯厚度的变化和焊接区22及对准装置32、52、72或92的高度变化。
通过以上的描述,本领域普通技术人员均很明白:本发明提供了一种改进的自对准器件结构,使管芯处于底座中心,连接引线处于焊接区的中心,同时也使连接引线和管芯的外引线对准。这样,由于获
得了较牢固的焊接连接,减少了生产中的缺陷,也大大提高了可靠性。
此外,管芯焊接区和连线之间的自对准功能增强了器件抗电冲击的能力。一般情况下,连接到管芯焊接区上的引线要比焊接区本身小,以保证不会因没有对准而接触到周围的绝缘材料。由于器件的自对准功能,管芯的焊接区和与其相连的引线之间只需要提供较小的对准余地,这样,连接装置引线部分可以做得比非对对准器件的大一些。这就允许较多的高电导率金属(例如,铜连线)靠近接触区,并允许在接触区与引线之间填充较多的焊料,而不至于溢出到芯片上临近的绝缘材料上。这种组合提高了器件的抗电冲击性,又不至于由于焊料的漫延而增加产生短路的可能性。
而且,本发明允许连接片在竖直平面内运动从而改进了制造公差。
此外,基于这里的描述,本领域普通技术人员应清楚地认识到运用已经描述的原理和精神即可对本发明作很多更改,并得到各种变型。因此,在下面的权利要求书中,包括了所有这样的更改和变型。
Claims (7)
1、一种半导体器件,其特征在于包括:
一片电子芯片,其第一表面用以连接引线装置,第二表面上具有用以与接触引线连接的焊接区;
引线装置,其第一部分用以容纳电子芯片,第二部分具有第一对准装置,用以与连接装置对准;和
连接装置,用于将引线连接到电子芯片上,其第一部分与焊接区连接,第二部分有一与第一对准装置配合的第二对准装置,用以将引线装置和焊接区之间的连接装置对准,包括在焊接区和连接装置的第一部分之间的第一焊接材料以及在第一、第二对准装置之间的第二焊接材料,其中,第一和第二焊接材料有共同的液化状态。
2、按照权利要求1的半导体器件,其中,第一焊接材料为在焊接区和连接装置的第一部分之间的第一焊料,第二焊接材料为在第一、第二对准装置之间的第二焊料。
3、按照权利要求1的半导体器件,还包括在电子芯片与引线装置的第一部分之间的第三焊接材料,其中,第一、第二和第三焊接材料有共同的液化状态。
4、按照权利要求1的半导体器件,其中第一对准装置包括第一凹陷部分,第二对准装置包括一个与第一凹陷部分相配合的第二凹陷部分。
5、按照权利要求1的半导体器件,其中第一对准装置包括第一凸起部分,第二对准装置包括一个与第一凸起部分相配合的第一凹陷部分。
6、一种装配半导体器件的方法,其特征在于包括以下步骤:
提供一个引线框架,其第一部分用以容纳管芯,第二部分用以连接半导体管芯上的焊接区,第二部分上有第一对准装置;
在引线框架的第一部分上装配上一半导体管芯,该管芯有一连接外引线的焊接区;和
把连接装置安装在管芯的焊接区和第一对准装置之间,连接引线有与第一对准装置相配合的第二对准装置。
通过在连接装置和焊接区以及彼此配合的第一、第二对准装置之间放置在装配过程中至少部分暂时为液态的焊接材料,使得连接装置在管芯和引线框架的第二部分之间被对准。
7、按照权利要求6的方法,其中,对准步骤包括:通过在半导体管芯和引线框架的第一部分之间填充焊接材料来实现管芯和连接引线的对准,这种焊接材料在装配过程中至少部分暂时为液态。
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US07/242,926 US4935803A (en) | 1988-09-09 | 1988-09-09 | Self-centering electrode for power devices |
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CN1041065A CN1041065A (zh) | 1990-04-04 |
CN1015585B true CN1015585B (zh) | 1992-02-19 |
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EP (1) | EP0362547B1 (zh) |
JP (1) | JP2658423B2 (zh) |
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- 1988-09-09 US US07/242,926 patent/US4935803A/en not_active Expired - Lifetime
-
1989
- 1989-07-10 MY MYPI89000939A patent/MY105130A/en unknown
- 1989-08-28 DE DE68928428T patent/DE68928428T2/de not_active Expired - Fee Related
- 1989-08-28 EP EP19890115823 patent/EP0362547B1/en not_active Expired - Lifetime
- 1989-09-07 CN CN89106979A patent/CN1015585B/zh not_active Expired
- 1989-09-08 JP JP23182489A patent/JP2658423B2/ja not_active Expired - Lifetime
- 1989-09-08 KR KR1019890013003A patent/KR900005586A/ko active IP Right Grant
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1518099B (zh) * | 2003-01-16 | 2010-05-05 | 松下电器产业株式会社 | 引线框架及其制造方法和使用引线框架的半导体器件 |
Also Published As
Publication number | Publication date |
---|---|
KR900005586A (ko) | 1990-04-14 |
EP0362547B1 (en) | 1997-11-05 |
DE68928428T2 (de) | 1998-07-16 |
EP0362547A1 (en) | 1990-04-11 |
CN1041065A (zh) | 1990-04-04 |
JPH02121356A (ja) | 1990-05-09 |
MY105130A (en) | 1994-08-30 |
DE68928428D1 (de) | 1997-12-11 |
US4935803A (en) | 1990-06-19 |
JP2658423B2 (ja) | 1997-09-30 |
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