CN101211977A - 具有凹陷沟道的晶体管及其制造方法 - Google Patents
具有凹陷沟道的晶体管及其制造方法 Download PDFInfo
- Publication number
- CN101211977A CN101211977A CNA200710195244XA CN200710195244A CN101211977A CN 101211977 A CN101211977 A CN 101211977A CN A200710195244X A CNA200710195244X A CN A200710195244XA CN 200710195244 A CN200710195244 A CN 200710195244A CN 101211977 A CN101211977 A CN 101211977A
- Authority
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- China
- Prior art keywords
- groove
- transistor
- insulating barrier
- thickness
- polysilicon layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims description 39
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 230000004888 barrier function Effects 0.000 claims description 30
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 30
- 229920005591 polysilicon Polymers 0.000 claims description 27
- 239000012212 insulator Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000007254 oxidation reaction Methods 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 230000003647 oxidation Effects 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 2
- 239000012535 impurity Substances 0.000 claims description 2
- 229910052757 nitrogen Inorganic materials 0.000 claims description 2
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 claims description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000009413 insulation Methods 0.000 abstract 5
- 230000001590 oxidative effect Effects 0.000 description 9
- 150000004767 nitrides Chemical class 0.000 description 8
- 239000004065 semiconductor Substances 0.000 description 6
- 239000002184 metal Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 229920002120 photoresistant polymer Polymers 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 239000008186 active pharmaceutical agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007665 sagging Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
- H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
Description
Claims (22)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020060133855 | 2006-12-26 | ||
KR1020060133855A KR100824205B1 (ko) | 2006-12-26 | 2006-12-26 | Dmos 트랜지스터 및 그 제조방법 |
KR10-2006-0133855 | 2006-12-26 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN101211977A true CN101211977A (zh) | 2008-07-02 |
CN101211977B CN101211977B (zh) | 2011-04-20 |
Family
ID=39541591
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN200710195244XA Active CN101211977B (zh) | 2006-12-26 | 2007-12-04 | 具有凹陷沟道的晶体管及其制造方法 |
Country Status (5)
Country | Link |
---|---|
US (2) | US7767530B2 (zh) |
JP (1) | JP5519902B2 (zh) |
KR (1) | KR100824205B1 (zh) |
CN (1) | CN101211977B (zh) |
TW (1) | TWI366917B (zh) |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102184959A (zh) * | 2011-04-25 | 2011-09-14 | 上海宏力半导体制造有限公司 | 功率mos管及其制造方法 |
CN102184960A (zh) * | 2011-04-22 | 2011-09-14 | 上海宏力半导体制造有限公司 | 功率金属氧化物半导体场效应管及其形成方法 |
CN102881577A (zh) * | 2011-07-11 | 2013-01-16 | 飞兆半导体公司 | 使用微波晶体再生长的单晶u-mos栅极 |
CN103247529A (zh) * | 2012-02-10 | 2013-08-14 | 无锡华润上华半导体有限公司 | 一种沟槽场效应器件及其制作方法 |
CN103762312A (zh) * | 2011-12-31 | 2014-04-30 | 广东中显科技有限公司 | 顶栅薄膜晶体管及其制造方法 |
CN104752206A (zh) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Trench MOS器件的制造方法及结构 |
Families Citing this family (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009025358A1 (ja) * | 2007-08-23 | 2009-02-26 | Takeda Pharmaceutical Company Limited | 複素環化合物およびその用途 |
KR100970282B1 (ko) * | 2007-11-19 | 2010-07-15 | 매그나칩 반도체 유한회사 | 트렌치 mosfet 및 그 제조방법 |
KR100940643B1 (ko) * | 2007-12-24 | 2010-02-05 | 주식회사 동부하이텍 | 반도체 소자의 제조방법 |
JP5546740B2 (ja) * | 2008-05-23 | 2014-07-09 | ローム株式会社 | 半導体装置 |
US8105903B2 (en) * | 2009-09-21 | 2012-01-31 | Force Mos Technology Co., Ltd. | Method for making a trench MOSFET with shallow trench structures |
JP5483693B2 (ja) * | 2009-12-17 | 2014-05-07 | ルネサスエレクトロニクス株式会社 | 半導体装置及びその製造方法 |
JP2014056913A (ja) | 2012-09-12 | 2014-03-27 | Sumitomo Electric Ind Ltd | 炭化珪素半導体装置 |
JP6056292B2 (ja) * | 2012-09-12 | 2017-01-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
JP5811973B2 (ja) | 2012-09-12 | 2015-11-11 | 住友電気工業株式会社 | 炭化珪素半導体装置の製造方法 |
CN103928513B (zh) * | 2013-01-15 | 2017-03-29 | 无锡华润上华半导体有限公司 | 一种沟槽dmos器件及其制作方法 |
CN110246842A (zh) * | 2018-03-08 | 2019-09-17 | 联华电子股份有限公司 | 一种制作半导体元件的方法 |
JP7157719B2 (ja) * | 2019-09-09 | 2022-10-20 | 株式会社東芝 | 半導体装置の製造方法 |
CN113782444A (zh) * | 2021-09-13 | 2021-12-10 | 济南市半导体元件实验所 | 一种底部厚氧沟槽mosfet器件的制造方法 |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4567641A (en) * | 1982-04-12 | 1986-02-04 | General Electric Company | Method of fabricating semiconductor devices having a diffused region of reduced length |
EP0091686B1 (en) * | 1982-04-12 | 1989-06-28 | General Electric Company | Semiconductor device having a diffused region of reduced length and method of fabricating the same |
US5358695A (en) * | 1993-01-21 | 1994-10-25 | Physical Sciences, Inc. | Process for producing nanoscale ceramic powders |
KR100187678B1 (ko) * | 1993-11-23 | 1999-06-01 | 김영환 | 반도체 장치의 소자 분리막 형성방법 |
US5424231A (en) * | 1994-08-09 | 1995-06-13 | United Microelectronics Corp. | Method for manufacturing a VDMOS transistor |
US5637898A (en) * | 1995-12-22 | 1997-06-10 | North Carolina State University | Vertical field effect transistors having improved breakdown voltage capability and low on-state resistance |
US5998833A (en) * | 1998-10-26 | 1999-12-07 | North Carolina State University | Power semiconductor devices having improved high frequency switching and breakdown characteristics |
US6291298B1 (en) * | 1999-05-25 | 2001-09-18 | Advanced Analogic Technologies, Inc. | Process of manufacturing Trench gate semiconductor device having gate oxide layer with multiple thicknesses |
US6420768B1 (en) * | 2000-12-15 | 2002-07-16 | General Semiconductor, Inc. | Trench schottky barrier rectifier and method of making the same |
JP4073176B2 (ja) * | 2001-04-02 | 2008-04-09 | 新電元工業株式会社 | 半導体装置およびその製造方法 |
US6849898B2 (en) * | 2001-08-10 | 2005-02-01 | Siliconix Incorporated | Trench MIS device with active trench corners and thick bottom oxide |
KR100458767B1 (ko) * | 2002-07-04 | 2004-12-03 | 주식회사 하이닉스반도체 | 반도체 소자의 소자 분리막 형성 방법 |
JP3713498B2 (ja) * | 2003-03-28 | 2005-11-09 | 株式会社東芝 | 半導体装置及びその製造方法 |
JP2005019668A (ja) * | 2003-06-26 | 2005-01-20 | Shindengen Electric Mfg Co Ltd | 半導体装置 |
JP4945055B2 (ja) * | 2003-08-04 | 2012-06-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2005252203A (ja) * | 2004-03-08 | 2005-09-15 | Toyota Motor Corp | 絶縁ゲート型半導体装置およびその製造方法 |
JP2005252204A (ja) * | 2004-03-08 | 2005-09-15 | Toyota Motor Corp | 絶縁ゲート型半導体装置およびその製造方法 |
JP2006210511A (ja) * | 2005-01-26 | 2006-08-10 | Oki Electric Ind Co Ltd | 半導体装置 |
JP2006344760A (ja) * | 2005-06-08 | 2006-12-21 | Sharp Corp | トレンチ型mosfet及びその製造方法 |
KR20060128472A (ko) * | 2005-06-10 | 2006-12-14 | 삼성전자주식회사 | 리세스된 게이트 전극을 갖는 모스 트랜지스터 및 그제조방법 |
KR100780629B1 (ko) * | 2006-11-15 | 2007-11-30 | 주식회사 하이닉스반도체 | 리세스 게이트를 갖는 반도체 소자의 제조 방법 |
-
2006
- 2006-12-26 KR KR1020060133855A patent/KR100824205B1/ko active IP Right Grant
-
2007
- 2007-09-18 JP JP2007241360A patent/JP5519902B2/ja not_active Expired - Fee Related
- 2007-09-18 US US11/898,991 patent/US7767530B2/en active Active
- 2007-09-26 TW TW096135787A patent/TWI366917B/zh active
- 2007-12-04 CN CN200710195244XA patent/CN101211977B/zh active Active
-
2010
- 2010-06-24 US US12/822,936 patent/US8637923B2/en active Active
Cited By (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102184960A (zh) * | 2011-04-22 | 2011-09-14 | 上海宏力半导体制造有限公司 | 功率金属氧化物半导体场效应管及其形成方法 |
CN102184960B (zh) * | 2011-04-22 | 2016-07-27 | 上海华虹宏力半导体制造有限公司 | 功率金属氧化物半导体场效应管及其形成方法 |
CN102184959A (zh) * | 2011-04-25 | 2011-09-14 | 上海宏力半导体制造有限公司 | 功率mos管及其制造方法 |
CN102881577A (zh) * | 2011-07-11 | 2013-01-16 | 飞兆半导体公司 | 使用微波晶体再生长的单晶u-mos栅极 |
CN103762312A (zh) * | 2011-12-31 | 2014-04-30 | 广东中显科技有限公司 | 顶栅薄膜晶体管及其制造方法 |
CN103247529A (zh) * | 2012-02-10 | 2013-08-14 | 无锡华润上华半导体有限公司 | 一种沟槽场效应器件及其制作方法 |
CN103247529B (zh) * | 2012-02-10 | 2016-08-03 | 无锡华润上华半导体有限公司 | 一种沟槽场效应器件及其制作方法 |
CN104752206A (zh) * | 2013-12-27 | 2015-07-01 | 中芯国际集成电路制造(上海)有限公司 | Trench MOS器件的制造方法及结构 |
CN104752206B (zh) * | 2013-12-27 | 2017-12-08 | 中芯国际集成电路制造(上海)有限公司 | Trench MOS器件的制造方法及结构 |
Also Published As
Publication number | Publication date |
---|---|
US20080150015A1 (en) | 2008-06-26 |
KR100824205B1 (ko) | 2008-04-21 |
US8637923B2 (en) | 2014-01-28 |
JP2008166696A (ja) | 2008-07-17 |
TW200828589A (en) | 2008-07-01 |
CN101211977B (zh) | 2011-04-20 |
JP5519902B2 (ja) | 2014-06-11 |
TWI366917B (en) | 2012-06-21 |
US7767530B2 (en) | 2010-08-03 |
US20100258865A1 (en) | 2010-10-14 |
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Effective date of registration: 20201021 Address after: Han Guozhongqingbeidao Patentee after: Key Foundry Co.,Ltd. Address before: Cheongju Chungbuk Korea Patentee before: MagnaChip Semiconductor, Ltd. |
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Address after: Republic of Korea Patentee after: Aisi Kaifang Semiconductor Co.,Ltd. Country or region after: Republic of Korea Address before: Han Guozhongqingbeidao Patentee before: Key Foundry Co.,Ltd. Country or region before: Republic of Korea |
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CP03 | Change of name, title or address |