TWI366917B - Transistor having recess channel and fabrication method thereof - Google Patents

Transistor having recess channel and fabrication method thereof

Info

Publication number
TWI366917B
TWI366917B TW096135787A TW96135787A TWI366917B TW I366917 B TWI366917 B TW I366917B TW 096135787 A TW096135787 A TW 096135787A TW 96135787 A TW96135787 A TW 96135787A TW I366917 B TWI366917 B TW I366917B
Authority
TW
Taiwan
Prior art keywords
transistor
fabrication method
recess channel
recess
channel
Prior art date
Application number
TW096135787A
Other languages
English (en)
Other versions
TW200828589A (en
Inventor
Cheol-Ho Cho
Original Assignee
Magnachip Semiconductor Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Magnachip Semiconductor Ltd filed Critical Magnachip Semiconductor Ltd
Publication of TW200828589A publication Critical patent/TW200828589A/zh
Application granted granted Critical
Publication of TWI366917B publication Critical patent/TWI366917B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42364—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity
    • H01L29/42368—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the insulating layer, e.g. thickness or uniformity the thickness being non-uniform
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7811—Vertical DMOS transistors, i.e. VDMOS transistors with an edge termination structure

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
TW096135787A 2006-12-26 2007-09-26 Transistor having recess channel and fabrication method thereof TWI366917B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1020060133855A KR100824205B1 (ko) 2006-12-26 2006-12-26 Dmos 트랜지스터 및 그 제조방법

Publications (2)

Publication Number Publication Date
TW200828589A TW200828589A (en) 2008-07-01
TWI366917B true TWI366917B (en) 2012-06-21

Family

ID=39541591

Family Applications (1)

Application Number Title Priority Date Filing Date
TW096135787A TWI366917B (en) 2006-12-26 2007-09-26 Transistor having recess channel and fabrication method thereof

Country Status (5)

Country Link
US (2) US7767530B2 (zh)
JP (1) JP5519902B2 (zh)
KR (1) KR100824205B1 (zh)
CN (1) CN101211977B (zh)
TW (1) TWI366917B (zh)

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KR100940643B1 (ko) * 2007-12-24 2010-02-05 주식회사 동부하이텍 반도체 소자의 제조방법
JP5546740B2 (ja) * 2008-05-23 2014-07-09 ローム株式会社 半導体装置
US8105903B2 (en) * 2009-09-21 2012-01-31 Force Mos Technology Co., Ltd. Method for making a trench MOSFET with shallow trench structures
JP5483693B2 (ja) * 2009-12-17 2014-05-07 ルネサスエレクトロニクス株式会社 半導体装置及びその製造方法
CN102184960B (zh) * 2011-04-22 2016-07-27 上海华虹宏力半导体制造有限公司 功率金属氧化物半导体场效应管及其形成方法
CN102184959B (zh) * 2011-04-25 2016-03-02 上海华虹宏力半导体制造有限公司 功率mos管及其制造方法
US8658500B2 (en) * 2011-07-11 2014-02-25 Fairchild Semiconductor Corporation Single crystal U-MOS gates using microwave crystal regrowth
CN103762312A (zh) * 2011-12-31 2014-04-30 广东中显科技有限公司 顶栅薄膜晶体管及其制造方法
CN103247529B (zh) * 2012-02-10 2016-08-03 无锡华润上华半导体有限公司 一种沟槽场效应器件及其制作方法
JP2014056913A (ja) 2012-09-12 2014-03-27 Sumitomo Electric Ind Ltd 炭化珪素半導体装置
JP5811973B2 (ja) 2012-09-12 2015-11-11 住友電気工業株式会社 炭化珪素半導体装置の製造方法
JP6056292B2 (ja) * 2012-09-12 2017-01-11 住友電気工業株式会社 炭化珪素半導体装置の製造方法
CN103928513B (zh) * 2013-01-15 2017-03-29 无锡华润上华半导体有限公司 一种沟槽dmos器件及其制作方法
CN104752206B (zh) * 2013-12-27 2017-12-08 中芯国际集成电路制造(上海)有限公司 Trench MOS器件的制造方法及结构
CN110246842A (zh) * 2018-03-08 2019-09-17 联华电子股份有限公司 一种制作半导体元件的方法
JP7157719B2 (ja) * 2019-09-09 2022-10-20 株式会社東芝 半導体装置の製造方法
CN113782444A (zh) * 2021-09-13 2021-12-10 济南市半导体元件实验所 一种底部厚氧沟槽mosfet器件的制造方法

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JP3713498B2 (ja) * 2003-03-28 2005-11-09 株式会社東芝 半導体装置及びその製造方法
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JP4945055B2 (ja) * 2003-08-04 2012-06-06 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
JP2005252204A (ja) * 2004-03-08 2005-09-15 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2005252203A (ja) * 2004-03-08 2005-09-15 Toyota Motor Corp 絶縁ゲート型半導体装置およびその製造方法
JP2006210511A (ja) * 2005-01-26 2006-08-10 Oki Electric Ind Co Ltd 半導体装置
JP2006344760A (ja) * 2005-06-08 2006-12-21 Sharp Corp トレンチ型ｍｏｓｆｅｔ及びその製造方法
KR20060128472A (ko) * 2005-06-10 2006-12-14 삼성전자주식회사 리세스된 게이트 전극을 갖는 모스 트랜지스터 및 그제조방법
KR100780629B1 (ko) * 2006-11-15 2007-11-30 주식회사 하이닉스반도체 리세스 게이트를 갖는 반도체 소자의 제조 방법

Also Published As

Publication number Publication date
US20100258865A1 (en) 2010-10-14
KR100824205B1 (ko) 2008-04-21
US20080150015A1 (en) 2008-06-26
JP2008166696A (ja) 2008-07-17
JP5519902B2 (ja) 2014-06-11
TW200828589A (en) 2008-07-01
US7767530B2 (en) 2010-08-03
CN101211977A (zh) 2008-07-02
US8637923B2 (en) 2014-01-28
CN101211977B (zh) 2011-04-20

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