CN102184959B - 功率mos管及其制造方法 - Google Patents
功率mos管及其制造方法 Download PDFInfo
- Publication number
- CN102184959B CN102184959B CN201110103148.4A CN201110103148A CN102184959B CN 102184959 B CN102184959 B CN 102184959B CN 201110103148 A CN201110103148 A CN 201110103148A CN 102184959 B CN102184959 B CN 102184959B
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- China
- Prior art keywords
- gate trench
- oxide layer
- shaped gate
- drain region
- shaped
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 238000000034 method Methods 0.000 title claims abstract description 45
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 36
- 239000000758 substrate Substances 0.000 claims description 21
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 9
- 229920005591 polysilicon Polymers 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- 238000000151 deposition Methods 0.000 claims description 5
- 238000005468 ion implantation Methods 0.000 claims description 4
- 238000000137 annealing Methods 0.000 claims description 3
- 238000001020 plasma etching Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 abstract description 12
- 230000015556 catabolic process Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 230000003071 parasitic effect Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
- H01L29/0623—Buried supplementary region, e.g. buried guard ring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/42372—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out
- H01L29/42376—Gate electrodes for field effect devices for field-effect transistors with insulated gate characterised by the conducting layer, e.g. the length, the sectional shape or the lay-out characterised by the length or the sectional shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
- H01L29/66734—Vertical DMOS transistors, i.e. VDMOS transistors with a step of recessing the gate electrode, e.g. to form a trench gate electrode
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110103148.4A CN102184959B (zh) | 2011-04-25 | 2011-04-25 | 功率mos管及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201110103148.4A CN102184959B (zh) | 2011-04-25 | 2011-04-25 | 功率mos管及其制造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN102184959A CN102184959A (zh) | 2011-09-14 |
CN102184959B true CN102184959B (zh) | 2016-03-02 |
Family
ID=44571099
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201110103148.4A Active CN102184959B (zh) | 2011-04-25 | 2011-04-25 | 功率mos管及其制造方法 |
Country Status (1)
Country | Link |
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CN (1) | CN102184959B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112735953A (zh) * | 2020-12-28 | 2021-04-30 | 广州粤芯半导体技术有限公司 | 一种屏蔽栅沟槽mosfet的制造方法 |
CN113257677A (zh) * | 2021-05-19 | 2021-08-13 | 上海华虹宏力半导体制造有限公司 | 分栅快闪存储器及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1930689A (zh) * | 2004-03-10 | 2007-03-14 | 皇家飞利浦电子股份有限公司 | 沟槽栅晶体管及其制造 |
CN100477267C (zh) * | 2004-10-29 | 2009-04-08 | 丰田自动车株式会社 | 绝缘栅极半导体器件及其生产方法 |
CN102005377A (zh) * | 2009-08-31 | 2011-04-06 | 万国半导体股份有限公司 | 具有厚底部屏蔽氧化物的沟槽双扩散金属氧化物半导体器件的制备 |
Family Cites Families (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6342709B1 (en) * | 1997-12-10 | 2002-01-29 | The Kansai Electric Power Co., Inc. | Insulated gate semiconductor device |
US6262453B1 (en) * | 1998-04-24 | 2001-07-17 | Magepower Semiconductor Corp. | Double gate-oxide for reducing gate-drain capacitance in trenched DMOS with high-dopant concentration buried-region under trenched gate |
CN101800243B (zh) * | 2000-03-17 | 2012-11-07 | 通用半导体公司 | 双栅极结构沟槽型dmos晶体管制造方法 |
DE10214151B4 (de) * | 2002-03-28 | 2007-04-05 | Infineon Technologies Ag | Halbleiterbauelement mit erhöhter Durchbruchspannung im Randbereich |
US7371641B2 (en) * | 2004-10-29 | 2008-05-13 | International Rectifier Corporation | Method of making a trench MOSFET with deposited oxide |
JP4622905B2 (ja) * | 2006-03-24 | 2011-02-02 | トヨタ自動車株式会社 | 絶縁ゲート型半導体装置の製造方法 |
KR100824205B1 (ko) * | 2006-12-26 | 2008-04-21 | 매그나칩 반도체 유한회사 | Dmos 트랜지스터 및 그 제조방법 |
US7615847B2 (en) * | 2007-03-23 | 2009-11-10 | Infineon Technologies Austria Ag | Method for producing a semiconductor component |
CN101345195A (zh) * | 2007-07-12 | 2009-01-14 | 茂德科技股份有限公司 | 半导体元件的制造方法 |
US20100308400A1 (en) * | 2008-06-20 | 2010-12-09 | Maxpower Semiconductor Inc. | Semiconductor Power Switches Having Trench Gates |
JP2010219361A (ja) * | 2009-03-18 | 2010-09-30 | Toshiba Corp | 半導体装置及びその製造方法 |
-
2011
- 2011-04-25 CN CN201110103148.4A patent/CN102184959B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1930689A (zh) * | 2004-03-10 | 2007-03-14 | 皇家飞利浦电子股份有限公司 | 沟槽栅晶体管及其制造 |
CN100477267C (zh) * | 2004-10-29 | 2009-04-08 | 丰田自动车株式会社 | 绝缘栅极半导体器件及其生产方法 |
CN102005377A (zh) * | 2009-08-31 | 2011-04-06 | 万国半导体股份有限公司 | 具有厚底部屏蔽氧化物的沟槽双扩散金属氧化物半导体器件的制备 |
Also Published As
Publication number | Publication date |
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CN102184959A (zh) | 2011-09-14 |
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PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
ASS | Succession or assignment of patent right |
Owner name: SHANGHAI HUAHONG GRACE SEMICONDUCTOR MANUFACTURING Free format text: FORMER OWNER: HONGLI SEMICONDUCTOR MANUFACTURE CO LTD, SHANGHAI Effective date: 20140428 |
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C41 | Transfer of patent application or patent right or utility model | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20140428 Address after: 201203 Shanghai Zhangjiang hi tech park Zuchongzhi Road No. 1399 Applicant after: Shanghai Huahong Grace Semiconductor Manufacturing Corporation Address before: 201203 Shanghai Guo Shou Jing Road, Pudong New Area Zhangjiang hi tech Park No. 818 Applicant before: Hongli Semiconductor Manufacture Co., Ltd., Shanghai |
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C14 | Grant of patent or utility model | ||
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