BRPI0706659A2 - métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos - Google Patents
métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos Download PDFInfo
- Publication number
- BRPI0706659A2 BRPI0706659A2 BRPI0706659-7A BRPI0706659A BRPI0706659A2 BR PI0706659 A2 BRPI0706659 A2 BR PI0706659A2 BR PI0706659 A BRPI0706659 A BR PI0706659A BR PI0706659 A2 BRPI0706659 A2 BR PI0706659A2
- Authority
- BR
- Brazil
- Prior art keywords
- silicon
- wafer
- crucible
- molded
- optionally
- Prior art date
Links
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 354
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 351
- 239000010703 silicon Substances 0.000 title claims abstract description 351
- 229910021420 polycrystalline silicon Inorganic materials 0.000 title claims abstract description 148
- 235000012431 wafers Nutrition 0.000 title claims abstract description 130
- 238000000034 method Methods 0.000 title claims abstract description 93
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 57
- 230000007547 defect Effects 0.000 claims abstract description 45
- 239000013078 crystal Substances 0.000 claims description 130
- 239000007787 solid Substances 0.000 claims description 77
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 71
- 238000002844 melting Methods 0.000 claims description 56
- 230000008018 melting Effects 0.000 claims description 56
- 238000001816 cooling Methods 0.000 claims description 43
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 39
- 238000010438 heat treatment Methods 0.000 claims description 27
- 238000002425 crystallisation Methods 0.000 claims description 24
- 230000008025 crystallization Effects 0.000 claims description 24
- 239000007788 liquid Substances 0.000 claims description 22
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 21
- 229910052760 oxygen Inorganic materials 0.000 claims description 21
- 239000001301 oxygen Substances 0.000 claims description 21
- 238000002161 passivation Methods 0.000 claims description 21
- 230000015572 biosynthetic process Effects 0.000 claims description 20
- 230000004927 fusion Effects 0.000 claims description 15
- 239000006117 anti-reflective coating Substances 0.000 claims description 14
- 239000002994 raw material Substances 0.000 claims description 11
- 238000000151 deposition Methods 0.000 claims description 8
- 238000004140 cleaning Methods 0.000 claims description 7
- 238000000576 coating method Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 7
- 230000003667 anti-reflective effect Effects 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 6
- 238000007789 sealing Methods 0.000 claims description 4
- 230000002950 deficient Effects 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 239000011324 bead Substances 0.000 claims description 2
- 239000000835 fiber Substances 0.000 claims 2
- 238000012544 monitoring process Methods 0.000 claims 2
- 238000000465 moulding Methods 0.000 abstract description 75
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 13
- 239000012535 impurity Substances 0.000 abstract description 13
- 239000000377 silicon dioxide Substances 0.000 abstract description 3
- 230000008569 process Effects 0.000 description 48
- 125000004429 atom Chemical group 0.000 description 34
- 230000012010 growth Effects 0.000 description 27
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 22
- 238000007711 solidification Methods 0.000 description 21
- 230000008023 solidification Effects 0.000 description 21
- 239000000155 melt Substances 0.000 description 15
- 239000000463 material Substances 0.000 description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 13
- 229910052757 nitrogen Inorganic materials 0.000 description 11
- 229910052799 carbon Inorganic materials 0.000 description 10
- 235000012239 silicon dioxide Nutrition 0.000 description 8
- 230000001965 increasing effect Effects 0.000 description 7
- 239000010453 quartz Substances 0.000 description 7
- 238000009826 distribution Methods 0.000 description 6
- 230000008901 benefit Effects 0.000 description 5
- 239000011449 brick Substances 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 5
- 238000006073 displacement reaction Methods 0.000 description 5
- 238000010899 nucleation Methods 0.000 description 5
- 238000002360 preparation method Methods 0.000 description 5
- 238000012545 processing Methods 0.000 description 5
- 239000000047 product Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000005520 cutting process Methods 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 4
- 238000009413 insulation Methods 0.000 description 4
- 239000012071 phase Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000011343 solid material Substances 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 150000004767 nitrides Chemical class 0.000 description 3
- 230000006911 nucleation Effects 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 230000035040 seed growth Effects 0.000 description 3
- 238000009331 sowing Methods 0.000 description 3
- 230000007847 structural defect Effects 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 241000201976 Polycarpon Species 0.000 description 2
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010348 incorporation Methods 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 239000007791 liquid phase Substances 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 230000006798 recombination Effects 0.000 description 2
- 238000005215 recombination Methods 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- QNRATNLHPGXHMA-XZHTYLCXSA-N (r)-(6-ethoxyquinolin-4-yl)-[(2s,4s,5r)-5-ethyl-1-azabicyclo[2.2.2]octan-2-yl]methanol;hydrochloride Chemical compound Cl.C([C@H]([C@H](C1)CC)C2)CN1[C@@H]2[C@H](O)C1=CC=NC2=CC=C(OCC)C=C21 QNRATNLHPGXHMA-XZHTYLCXSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 229910002601 GaN Inorganic materials 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000004854 X-ray topography Methods 0.000 description 1
- 239000005083 Zinc sulfide Substances 0.000 description 1
- LEVVHYCKPQWKOP-UHFFFAOYSA-N [Si].[Ge] Chemical compound [Si].[Ge] LEVVHYCKPQWKOP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- CSSYLTMKCUORDA-UHFFFAOYSA-N barium(2+);oxygen(2-) Chemical class [O-2].[Ba+2] CSSYLTMKCUORDA-UHFFFAOYSA-N 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000009395 breeding Methods 0.000 description 1
- 230000001488 breeding effect Effects 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003518 caustics Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- VJTAZCKMHINUKO-UHFFFAOYSA-M chloro(2-methoxyethyl)mercury Chemical compound [Cl-].COCC[Hg+] VJTAZCKMHINUKO-UHFFFAOYSA-M 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 235000013305 food Nutrition 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910000311 lanthanide oxide Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 239000000395 magnesium oxide Substances 0.000 description 1
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 1
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910021424 microcrystalline silicon Inorganic materials 0.000 description 1
- 230000003278 mimic effect Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000037361 pathway Effects 0.000 description 1
- 238000013082 photovoltaic technology Methods 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 210000000582 semen Anatomy 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000002893 slag Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
- 229910052984 zinc sulfide Inorganic materials 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/003—Heating or cooling of the melt or the crystallised material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B28/00—Production of homogeneous polycrystalline material with defined structure
- C30B28/04—Production of homogeneous polycrystalline material with defined structure from liquids
- C30B28/06—Production of homogeneous polycrystalline material with defined structure from liquids by normal freezing or freezing under temperature gradient
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F71/00—Manufacture or treatment of devices covered by this subclass
- H10F71/121—The active layers comprising only Group IV materials
- H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
- H10F77/164—Polycrystalline semiconductors
- H10F77/1642—Polycrystalline semiconductors including only Group IV materials
- H10F77/1645—Polycrystalline semiconductors including only Group IV materials including microcrystalline silicon
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/30—Coatings
- H10F77/306—Coatings for devices having potential barriers
- H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
- H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/70—Surface textures, e.g. pyramid structures
- H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/545—Microcrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/546—Polycrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/917—Magnetic
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10T117/10—Apparatus
- Y10T117/1024—Apparatus for crystallization from liquid or supercritical state
- Y10T117/1092—Shape defined by a solid member other than seed or product [e.g., Bridgman-Stockbarger]
Landscapes
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Photovoltaic Devices (AREA)
- Silicon Compounds (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
Applications Claiming Priority (9)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US76045306P | 2006-01-20 | 2006-01-20 | |
| US60/760,453 | 2006-01-20 | ||
| US80895406P | 2006-05-30 | 2006-05-30 | |
| US60/808,954 | 2006-05-30 | ||
| US83967206P | 2006-08-24 | 2006-08-24 | |
| US83967006P | 2006-08-24 | 2006-08-24 | |
| US60/839,670 | 2006-08-24 | ||
| US60/836,672 | 2006-08-24 | ||
| PCT/US2007/060663 WO2007084936A2 (en) | 2006-01-20 | 2007-01-18 | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BRPI0706659A2 true BRPI0706659A2 (pt) | 2011-04-05 |
Family
ID=38191296
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0706659-7A BRPI0706659A2 (pt) | 2006-01-20 | 2007-01-18 | métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos |
| BRPI0706547-7A BRPI0706547A2 (pt) | 2006-01-20 | 2007-01-18 | métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos de silìcio monocristalinos contìnuos, bolachas e silìcio |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BRPI0706547-7A BRPI0706547A2 (pt) | 2006-01-20 | 2007-01-18 | métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos de silìcio monocristalinos contìnuos, bolachas e silìcio |
Country Status (9)
| Country | Link |
|---|---|
| US (8) | US8951344B2 (https=) |
| EP (2) | EP1974076A2 (https=) |
| JP (2) | JP5486190B2 (https=) |
| KR (6) | KR101400075B1 (https=) |
| AU (2) | AU2007205949B2 (https=) |
| BR (2) | BRPI0706659A2 (https=) |
| CA (2) | CA2636033A1 (https=) |
| TW (3) | TWI445851B (https=) |
| WO (2) | WO2007084936A2 (https=) |
Families Citing this family (108)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101400075B1 (ko) * | 2006-01-20 | 2014-05-28 | 에이엠지 아이디얼캐스트 솔라 코포레이션 | 광전 변환 소자용 기하학적 다결정 캐스트 실리콘 및 기하학적 다결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치 |
| DE102006017621B4 (de) * | 2006-04-12 | 2008-12-24 | Schott Ag | Vorrichtung und Verfahren zur Herstellung von multikristallinem Silizium |
| JP2008156166A (ja) * | 2006-12-25 | 2008-07-10 | Sumco Solar Corp | シリコンインゴットの鋳造方法および切断方法 |
| FR2918080B1 (fr) * | 2007-06-29 | 2010-12-17 | Commissariat Energie Atomique | Dispositif et procede d'elaboration de plaquettes en materiau semi-conducteur par moulage et cristallisation dirigee |
| JP2010534189A (ja) * | 2007-07-20 | 2010-11-04 | ビーピー・コーポレーション・ノース・アメリカ・インコーポレーテッド | シード結晶からキャストシリコンを製造するための方法及び装置 |
| US8440157B2 (en) * | 2007-07-20 | 2013-05-14 | Amg Idealcast Solar Corporation | Methods and apparatuses for manufacturing cast silicon from seed crystals |
| WO2009015167A1 (en) * | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
| US8591649B2 (en) * | 2007-07-25 | 2013-11-26 | Advanced Metallurgical Group Idealcast Solar Corp. | Methods for manufacturing geometric multi-crystalline cast materials |
| DE102007035756B4 (de) * | 2007-07-27 | 2010-08-05 | Deutsche Solar Ag | Verfahren zur Herstellung von Nichteisenmetall-Blöcken |
| DE102007038851A1 (de) * | 2007-08-16 | 2009-02-19 | Schott Ag | Verfahren zur Herstellung von monokristallinen Metall- oder Halbmetallkörpern |
| JP5239265B2 (ja) * | 2007-09-07 | 2013-07-17 | 株式会社Ｓｕｍｃｏ | シリコン単結晶引上げ用種結晶及び該種結晶を使用したシリコン単結晶の製造方法 |
| US8030633B2 (en) * | 2007-09-27 | 2011-10-04 | Bp Corporation North America Inc. | Methods and systems for monitoring a solid-liquid interface |
| US7758696B2 (en) | 2007-09-27 | 2010-07-20 | Bp Corporation North America Inc | Methods and systems for monitoring a solid-liquid interface |
| US20090151622A1 (en) * | 2007-12-14 | 2009-06-18 | Wilson Andrew B | Systems and methods for growing polycrystalline silicon ingots |
| JP2009152265A (ja) * | 2007-12-19 | 2009-07-09 | Tohoku Univ | 光電変換素子製造装置及び方法、並びに光電変換素子 |
| EP2072645B2 (en) † | 2007-12-19 | 2014-12-24 | Schott AG | Method for producing a monocrystalline or polycrystalline semiconductor material |
| WO2009118199A1 (de) * | 2008-03-28 | 2009-10-01 | Schott Ag | Verfahren zur thermographischen prüfung nichtmetallischer werkstoffe, insbesondere beschichteter nichtmetallischer werkstoffe, sowie verfahren zu deren herstellung und verfahrensgemäss hergestellter körper |
| US8143143B2 (en) | 2008-04-14 | 2012-03-27 | Bandgap Engineering Inc. | Process for fabricating nanowire arrays |
| JP5137670B2 (ja) * | 2008-04-23 | 2013-02-06 | 信越化学工業株式会社 | 多結晶シリコンロッドの製造方法 |
| CN102057503A (zh) * | 2008-05-13 | 2011-05-11 | 应用材料股份有限公司 | 用于太阳能电池制造的晶体生长装置 |
| US8758507B2 (en) * | 2008-06-16 | 2014-06-24 | Silicor Materials Inc. | Germanium enriched silicon material for making solar cells |
| US7887633B2 (en) * | 2008-06-16 | 2011-02-15 | Calisolar, Inc. | Germanium-enriched silicon material for making solar cells |
| US8475591B2 (en) * | 2008-08-15 | 2013-07-02 | Varian Semiconductor Equipment Associates, Inc. | Method of controlling a thickness of a sheet formed from a melt |
| US20100055020A1 (en) * | 2008-08-27 | 2010-03-04 | Bp Corporation North America Inc | Apparatus and Method for a Crucible Design and Tipping Mechanism for Silicon Casting |
| TW201012988A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Gas recirculation heat exchanger for casting silicon |
| TW201019480A (en) | 2008-08-27 | 2010-05-16 | Bp Corp North America Inc | High temperature support apparatus and method of use for casting materials |
| TW201012978A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Apparatus and method of use for a casting system with independent melting and solidification |
| US20100140558A1 (en) * | 2008-12-09 | 2010-06-10 | Bp Corporation North America Inc. | Apparatus and Method of Use for a Top-Down Directional Solidification System |
| US20100148403A1 (en) * | 2008-12-16 | 2010-06-17 | Bp Corporation North America Inc. | Systems and Methods For Manufacturing Cast Silicon |
| JP2012516572A (ja) * | 2009-01-30 | 2012-07-19 | エイエムジー・アイデアルキャスト・ソーラー・コーポレーション | シード層及びシード層の製造方法 |
| DE102009021003A1 (de) * | 2009-05-12 | 2010-11-18 | Centrotherm Sitec Gmbh | Verfahren und Vorrichtung zur Bereitstellung flüssigen Siliziums |
| WO2011009062A2 (en) | 2009-07-16 | 2011-01-20 | Memc Singapore Pte, Ltd. | Coated crucibles and methods for preparing and use thereof |
| US7888158B1 (en) | 2009-07-21 | 2011-02-15 | Sears Jr James B | System and method for making a photovoltaic unit |
| JP2011057472A (ja) * | 2009-09-07 | 2011-03-24 | Mitsubishi Materials Techno Corp | 多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴットの製造装置 |
| KR101093115B1 (ko) | 2009-10-15 | 2011-12-13 | 주식회사 효성 | 레이저를 이용한 텍스처링 방법과 이를 이용한 태양전지 제조방법 및 그에 의해 제조된 태양전지 |
| DE102010000687B4 (de) | 2010-01-05 | 2012-10-18 | Solarworld Innovations Gmbh | Tiegel und Verfahren zur Herstellung von Silizium-Blöcken |
| WO2011105430A1 (ja) * | 2010-02-23 | 2011-09-01 | 京セラ株式会社 | ドーパント材、半導体基板、太陽電池素子、およびドーパント材の製造方法 |
| DE102010029741B4 (de) * | 2010-06-07 | 2013-02-28 | Solarworld Innovations Gmbh | Verfahren zum Herstellen von Silizium-Wafern, Silizium Wafer und Verwendung eines Silizium-Wafer als Silizium-Solarzelle |
| CN101864594A (zh) * | 2010-06-10 | 2010-10-20 | 晶海洋半导体材料（东海）有限公司 | 一种准单晶硅的铸锭方法 |
| JP2012001379A (ja) * | 2010-06-15 | 2012-01-05 | Sharp Corp | 太陽電池モジュール、シリコンリボンの製造方法および球状シリコンの製造方法 |
| TWI534307B (zh) * | 2010-06-15 | 2016-05-21 | 中美矽晶製品股份有限公司 | 製造矽晶鑄錠之方法 |
| JP5606189B2 (ja) * | 2010-07-08 | 2014-10-15 | Ｊｘ日鉱日石金属株式会社 | ハイブリッドシリコンウエハ及びその製造方法 |
| JP5512426B2 (ja) * | 2010-07-08 | 2014-06-04 | Ｊｘ日鉱日石金属株式会社 | ハイブリッドシリコンウエハ及びその製造方法 |
| JP5740111B2 (ja) * | 2010-07-22 | 2015-06-24 | 三菱マテリアル株式会社 | 多結晶シリコンインゴット製造装置、多結晶シリコンインゴットの製造方法及び多結晶シリコンインゴット |
| US20120159993A1 (en) * | 2010-11-30 | 2012-06-28 | Rec Silicon Inc. | Feedstock melting and casting system and process |
| WO2012149151A1 (en) * | 2011-04-29 | 2012-11-01 | Graftech International Holdings Inc. | Graphite crucible for silicon crystal production |
| CN102797035B (zh) * | 2011-05-26 | 2016-02-10 | 浙江昱辉阳光能源有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
| CN102797037B (zh) * | 2011-05-26 | 2015-08-12 | 浙江昱辉阳光能源有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
| CN102797036B (zh) * | 2011-05-26 | 2016-06-15 | 浙江昱辉阳光能源有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
| DE102011076860B4 (de) | 2011-06-01 | 2016-01-14 | Forschungsverbund Berlin E.V. | Verfahren zur gerichteten Kristallisation von Ingots |
| DE102011051608A1 (de) | 2011-07-06 | 2013-01-10 | Schott Solar Ag | Verfahren und Vorrichtung zum gerichteten Erstarren einer Nichtmetall-Schmelze |
| US9133565B2 (en) * | 2011-10-14 | 2015-09-15 | Sino-American Silicon Products Inc. | Crystalline silicon ingot and method of fabricating the same |
| DE102011086669B4 (de) * | 2011-11-18 | 2016-08-04 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Silizium-Blöcken sowie Silizium-Block |
| SG190514A1 (en) | 2011-11-28 | 2013-06-28 | Sino American Silicon Prod Inc | Crystalline silicon ingot and method of fabricating the same |
| US9493357B2 (en) | 2011-11-28 | 2016-11-15 | Sino-American Silicon Products Inc. | Method of fabricating crystalline silicon ingot including nucleation promotion layer |
| US10065863B2 (en) * | 2011-11-28 | 2018-09-04 | Sino-American Silicon Products Inc. | Poly-crystalline silicon ingot having a nucleation promotion layer comprising a plurality of chips and chunks of poly-crystalline silicon on the bottom |
| US10087080B2 (en) * | 2011-11-28 | 2018-10-02 | Sino-American Silicon Products Inc. | Methods of fabricating a poly-crystalline silcon ingot from a nucleation promotion layer comprised of chips and chunks of silicon-containing particles |
| GB2497120A (en) * | 2011-12-01 | 2013-06-05 | Rec Wafer Norway As | Production of mono-crystalline silicon |
| DE102011056404A1 (de) | 2011-12-14 | 2013-06-20 | Schott Solar Ag | Verfahren zur Qualitätsermittlung eines Siliciumwafers |
| WO2013095928A1 (en) * | 2011-12-23 | 2013-06-27 | Gtat Corporation | Method of producing bricks from a silicon ingot |
| CN103194794A (zh) * | 2012-01-10 | 2013-07-10 | 徐传兴 | 一种准单晶硅铸锭设备及铸锭方法 |
| FR2985722B1 (fr) * | 2012-01-13 | 2014-02-14 | Commissariat Energie Atomique | Procede de purification du silicium. |
| US20130192516A1 (en) * | 2012-01-27 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | Method of preparing cast silicon by directional solidification |
| US20130193559A1 (en) * | 2012-01-27 | 2013-08-01 | Memc Singapore Pte. Ltd. (Uen200614794D) | CAST SILICON ingot prepared BY DIRECTIONAL SOLIDIFICATION |
| WO2013112231A1 (en) * | 2012-01-27 | 2013-08-01 | Gtat Corporation | Method of producing monocrystalline silicon |
| TWI580825B (zh) * | 2012-01-27 | 2017-05-01 | Ｍｅｍｃ新加坡有限公司 | 藉由定向固化作用製備鑄態矽之方法 |
| DE102012203524B4 (de) * | 2012-03-06 | 2016-10-27 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung von Silizium-Ingots |
| US8902428B2 (en) * | 2012-03-15 | 2014-12-02 | Applied Materials, Inc. | Process and apparatus for measuring the crystal fraction of crystalline silicon casted mono wafers |
| DE102012102597B4 (de) | 2012-03-26 | 2020-05-14 | Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. | Verfahren zur Herstellung eines gerichtet erstarrten Materialkörpers aus Silizium oder Germanium, Wafer aus Silizium oder Germanium, sowie Verwendungen hiervon |
| WO2013145558A1 (ja) * | 2012-03-26 | 2013-10-03 | 株式会社Sumco | 多結晶シリコンおよびその鋳造方法 |
| KR101656596B1 (ko) | 2012-04-01 | 2016-09-09 | 장 시 사이 웨이 엘디케이 솔라 하이-테크 컴퍼니 리미티드 | 다결정 실리콘 잉곳, 이의 제조 방법 및 다결정 실리콘 웨이퍼 |
| CN103074669B (zh) * | 2013-01-29 | 2015-05-13 | 江西赛维Ldk太阳能高科技有限公司 | 多晶硅锭及其制备方法和多晶硅片 |
| JP5870263B2 (ja) * | 2012-04-20 | 2016-02-24 | パナソニックＩｐマネジメント株式会社 | シリコン単結晶育成用るつぼの製造方法 |
| GB2502102A (en) * | 2012-05-16 | 2013-11-20 | Rec Wafer Norway As | Improved production of monocrystalline silicon |
| CN102703969B (zh) * | 2012-06-14 | 2015-04-15 | 天威新能源控股有限公司 | 低碳准单晶铸锭炉及应用该铸锭炉进行铸锭的方法 |
| US9315917B2 (en) * | 2012-07-30 | 2016-04-19 | Solar World Industries America Inc. | Apparatus and method for the production of ingots |
| CN102776557A (zh) * | 2012-08-16 | 2012-11-14 | 江西旭阳雷迪高科技股份有限公司 | 一种用碎硅片作为籽晶来铸造多晶硅锭的方法 |
| US20140137794A1 (en) * | 2012-11-19 | 2014-05-22 | Memc Singapore, Pte. Ltd (Uen200614797D) | Method of Preparing A Directional Solidification System Furnace |
| US8900972B2 (en) | 2012-11-19 | 2014-12-02 | Memc Singapore Pte. Ltd. | Systems and methods for producing seed bricks |
| FR2999801B1 (fr) * | 2012-12-14 | 2014-12-26 | Soitec Silicon On Insulator | Procede de fabrication d'une structure |
| US20140186486A1 (en) * | 2012-12-31 | 2014-07-03 | Memc Singapore, Pte. Ltd (Uen200614797D) | Apparatus For Producing Rectangular Seeds |
| US9111745B2 (en) * | 2012-12-31 | 2015-08-18 | MEMC Singapore Pte., Ltd. (UEN200614794D) | Methods for producing rectangular seeds for ingot growth |
| US8735204B1 (en) | 2013-01-17 | 2014-05-27 | Alliance For Sustainable Energy, Llc | Contact formation and gettering of precipitated impurities by multiple firing during semiconductor device fabrication |
| US8895416B2 (en) | 2013-03-11 | 2014-11-25 | Alliance For Sustainable Energy, Llc | Semiconductor device PN junction fabrication using optical processing of amorphous semiconductor material |
| DE102013107188A1 (de) | 2013-03-18 | 2014-09-18 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
| CN103205798B (zh) * | 2013-03-21 | 2016-02-24 | 南昌大学 | 一种以铸硅实体为材料的太阳能电池制造方法 |
| DE102013107189A1 (de) * | 2013-03-22 | 2014-09-25 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
| WO2014147262A1 (de) | 2013-03-22 | 2014-09-25 | Schott Ag | Rohling aus silizium, verfahren zu dessen herstellung sowie verwendung desselben |
| TWI602779B (zh) * | 2013-03-28 | 2017-10-21 | 三菱綜合材料股份有限公司 | 矽構材及矽構材之製造方法 |
| DE102013107193A1 (de) | 2013-04-08 | 2014-10-09 | Schott Ag | Rohling aus Silizium, Verfahren zu dessen Herstellung sowie Verwendung desselben |
| KR101437281B1 (ko) * | 2013-05-06 | 2014-09-03 | 웅진에너지 주식회사 | 냉도가니를 이용한 유사단결정 잉곳성장방법 |
| FR3005966B1 (fr) | 2013-05-27 | 2016-12-30 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium par reprise sur germes en four de solidification dirigee |
| FR3005967B1 (fr) | 2013-05-27 | 2017-06-02 | Commissariat Energie Atomique | Procede de fabrication d'un lingot de silicium dote de joints de grains symetriques |
| US10633759B2 (en) * | 2013-09-30 | 2020-04-28 | Gtat Corporation | Technique for controlling temperature uniformity in crystal growth apparatus |
| FR3019189B1 (fr) * | 2014-03-31 | 2018-07-27 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Creuset, procede de fabrication du creuset, et procede de fabrication d'un materiau cristallin au moyen d'un tel creuset |
| FR3029941B1 (fr) * | 2014-12-12 | 2019-10-11 | Commissariat A L'energie Atomique Et Aux Energies Alternatives | Pavage de germes |
| ES3041838T3 (en) * | 2016-11-14 | 2025-11-14 | Shinetsu Chemical Co | Method for manufacturing high-photoelectric-conversion-efficiency solar cell |
| CN108004589A (zh) * | 2018-01-12 | 2018-05-08 | 无锡惠郡科技有限公司 | 一种八边形多晶硅铸锭的制造方法及其制造设备 |
| WO2019186871A1 (ja) * | 2018-03-29 | 2019-10-03 | 株式会社クリスタルシステム | 単結晶製造装置および単結晶製造方法 |
| DE102018207759A1 (de) * | 2018-05-17 | 2019-11-21 | Carl Zeiss Smt Gmbh | Verfahren zum Herstellen eines Substrats für ein optisches Element und reflektierendes optisches Element |
| TWI700403B (zh) * | 2018-09-17 | 2020-08-01 | 中美矽晶製品股份有限公司 | 矽晶碇及其成長方法、矽晶棒及矽晶片 |
| TWI785254B (zh) * | 2019-07-01 | 2022-12-01 | 環球晶圓股份有限公司 | 矽晶碇及其製造方法與鋰電池的負極材料 |
| CN114127343A (zh) | 2019-07-18 | 2022-03-01 | 京瓷株式会社 | 硅锭、硅晶块、硅衬底、硅锭的制造方法和太阳能电池 |
| US12404604B2 (en) | 2019-07-31 | 2025-09-02 | Kyocera Corporation | Silicon ingot, silicon block, silicon substrate, and solar cell |
| CN111364100A (zh) * | 2020-04-30 | 2020-07-03 | 江苏协鑫硅材料科技发展有限公司 | 单晶硅锭及其制备方法、铸造单晶硅片及其制备方法 |
| FR3111360B1 (fr) | 2020-06-15 | 2024-04-12 | Commissariat Energie Atomique | Procédé de fabrication d’une pièce par solidification d’un matériau semi-conducteur |
| CN111705358A (zh) * | 2020-06-30 | 2020-09-25 | 江苏协鑫硅材料科技发展有限公司 | 铸造单晶硅锭及其制备方法 |
| CN114561701B (zh) * | 2021-06-07 | 2022-08-19 | 浙江大学杭州国际科创中心 | 一种铸造法生长氧化镓单晶的方法及包含氧化镓单晶的半导体器件 |
Family Cites Families (136)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3135585A (en) * | 1960-03-01 | 1964-06-02 | Gen Electric | Method of growing dislocation-free semiconductor crystals |
| GB1323685A (en) * | 1969-10-25 | 1973-07-18 | Gkn Group Services Ltd | Apparatus for die-casting metals |
| GB1315543A (en) | 1970-05-11 | 1973-05-02 | Foseco Int | Casting of metal ingots |
| US3581804A (en) * | 1970-05-11 | 1971-06-01 | Hamilton Die Cast Inc | Expansion gap compensating system for a die |
| US3653432A (en) * | 1970-09-01 | 1972-04-04 | Us Army | Apparatus and method for unidirectionally solidifying high temperature material |
| GB1380726A (en) | 1971-05-11 | 1975-01-15 | British Iron Steel Research | Ingot mould |
| US3898051A (en) * | 1973-12-28 | 1975-08-05 | Crystal Syst | Crystal growing |
| US4101624A (en) * | 1974-03-06 | 1978-07-18 | Ppg Industries, Inc. | Method of casting silicon |
| US4094621A (en) * | 1974-12-13 | 1978-06-13 | Karl Hehl | Die closing unit with oversize injection molding die |
| DE2508803C3 (de) * | 1975-02-28 | 1982-07-08 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zur Herstellung plattenförmiger Siliciumkristalle mit Kolumnarstruktur |
| JPS51149824A (en) * | 1975-06-18 | 1976-12-23 | Nippon Kokan Kk | Downwardly divergent mold |
| US4075055A (en) * | 1976-04-16 | 1978-02-21 | International Business Machines Corporation | Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal |
| DE2745247C3 (de) * | 1977-10-07 | 1980-03-13 | Wacker-Chemitronic Gesellschaft Fuer Elektronik-Grundstoffe Mbh, 8263 Burghausen | Verfahren und Vorrichtung zur semikontinuierlichen Herstellung von Siliciumformkörpern |
| US4264406A (en) * | 1979-06-11 | 1981-04-28 | The United States Of America As Represented By The Secretary Of The Army | Method for growing crystals |
| US4382638A (en) * | 1980-06-06 | 1983-05-10 | Seiko Seiki Kabushiki Kaisha | Sealing structure of spindle device |
| JPS5846662Y2 (ja) | 1981-05-30 | 1983-10-24 | ルピアン株式会社 | 洋傘 |
| JPS62161452A (ja) * | 1986-01-10 | 1987-07-17 | Akio Nakano | ダイカストマシン |
| JPH041930Y2 (https=) | 1986-04-12 | 1992-01-23 | ||
| US5363799A (en) * | 1987-08-08 | 1994-11-15 | Canon Kabushiki Kaisha | Method for growth of crystal |
| US5205872A (en) * | 1988-12-10 | 1993-04-27 | Kawasaki Steel Corporation | Method of producing crystal bodies having controlled crystalline orientation |
| JP2823257B2 (ja) | 1989-01-06 | 1998-11-11 | 株式会社東芝 | 半導体単結晶製造装置 |
| DE3929635A1 (de) | 1989-09-06 | 1991-03-07 | Siemens Ag | Verfahren zum abtrennen fester partikel aus siliziumschmelzen |
| JPH0753294Y2 (ja) | 1989-12-06 | 1995-12-06 | 日本電気株式会社 | 車両搭載用追尾平面アンテナ装置 |
| AU632886B2 (en) * | 1990-01-25 | 1993-01-14 | Ebara Corporation | Melt replenishment system for dendritic web growth |
| US5037921A (en) | 1990-03-01 | 1991-08-06 | E. I. Du Pont De Nemours And Company | Base resistant fluoroelastomers with improved processibility and curability |
| EP0450494B1 (en) | 1990-03-30 | 1996-06-19 | Sumitomo Sitix Corporation | Manufacturing method for single-crystal silicon |
| US5264070A (en) * | 1990-10-09 | 1993-11-23 | Motorola, Inc. | Method of growth-orientation of a crystal on a device using an oriented seed layer |
| US5363796A (en) * | 1991-02-20 | 1994-11-15 | Sumitomo Metal Industries, Ltd. | Apparatus and method of growing single crystal |
| DE4106589C2 (de) * | 1991-03-01 | 1997-04-24 | Wacker Siltronic Halbleitermat | Kontinuierliches Nachchargierverfahren mit flüssigem Silicium beim Tiegelziehen nach Czochralski |
| US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
| JPH05117091A (ja) * | 1991-10-29 | 1993-05-14 | Fujikura Ltd | 太陽電池用粒状シリコン単結晶の製造方法 |
| EP0541033A3 (en) * | 1991-11-08 | 1993-06-30 | Siemens Aktiengesellschaft | Process of fabrication of thin-film polycristalline silicon solar cells |
| US5614019A (en) | 1992-06-08 | 1997-03-25 | Air Products And Chemicals, Inc. | Method for the growth of industrial crystals |
| US5443032A (en) | 1992-06-08 | 1995-08-22 | Air Products And Chemicals, Inc. | Method for the manufacture of large single crystals |
| JPH06191820A (ja) | 1992-12-28 | 1994-07-12 | Tonen Corp | シリコン薄板の製造方法 |
| US5431869A (en) * | 1993-01-12 | 1995-07-11 | Council Of Scientific & Industrial Research | Process for the preparation of polycrystalline silicon ingot |
| JP3391503B2 (ja) | 1993-04-13 | 2003-03-31 | 同和鉱業株式会社 | 縦型ボート法による化合物半導体単結晶の製造方法 |
| GB2279585B (en) | 1993-07-08 | 1996-11-20 | Crystalox Ltd | Crystallising molten materials |
| US5549746A (en) * | 1993-09-24 | 1996-08-27 | General Electric Company | Solid state thermal conversion of polycrystalline alumina to sapphire using a seed crystal |
| JP3056363B2 (ja) | 1993-11-17 | 2000-06-26 | シャープ株式会社 | 多結晶シリコン製造方法および製造装置 |
| JP2833478B2 (ja) | 1994-05-18 | 1998-12-09 | 信越半導体株式会社 | シリコン単結晶成長方法 |
| JP3216861B2 (ja) * | 1995-04-10 | 2001-10-09 | シャープ株式会社 | 多結晶シリコン膜の形成方法および薄膜トランジスタの製造方法 |
| JP3004563B2 (ja) * | 1995-04-20 | 2000-01-31 | 三菱マテリアル株式会社 | シリコン単結晶の種結晶 |
| US6769473B1 (en) * | 1995-05-29 | 2004-08-03 | Ube Industries, Ltd. | Method of shaping semisolid metals |
| JP3242292B2 (ja) * | 1995-06-15 | 2001-12-25 | シャープ株式会社 | 多結晶半導体の製造方法および製造装置 |
| IT1276423B1 (it) * | 1995-06-20 | 1997-10-31 | Ansaldo Trasporti Spa | Sistema di controllo per dispositivi di segnalazione luminosa di tipo ferroviario |
| JP4185575B2 (ja) | 1995-12-26 | 2008-11-26 | ゼロックス コーポレイション | エピタキシャル結晶化プロセス |
| US5707744A (en) * | 1995-12-26 | 1998-01-13 | Xerox Corporation | Solid phase epitaxial crystallization of amorphous silicon films on insulating substrates |
| JPH09183686A (ja) | 1995-12-27 | 1997-07-15 | Shin Etsu Handotai Co Ltd | 単結晶引き上げ方法及び装置 |
| DE19607098C2 (de) * | 1996-02-24 | 1999-06-17 | Ald Vacuum Techn Gmbh | Verfahren und Vorrichtung zum gerichteten Erstarren einer Schmelze aus Silizium zu einem Block in einem bodenlosen metallischen Kaltwandtiegel |
| JP3787888B2 (ja) | 1996-02-28 | 2006-06-21 | 住友電気工業株式会社 | 結晶の育成方法及び育成用ルツボ |
| US6342312B2 (en) * | 1996-03-22 | 2002-01-29 | Canon Kabushiki Kaisha | Calcium fluoride crystal, optical article and exposure apparatus for photo-lithography using the same |
| US5944890A (en) * | 1996-03-29 | 1999-08-31 | Denso Corporation | Method of producing single crystals and a seed crystal used in the method |
| JPH107493A (ja) * | 1996-06-20 | 1998-01-13 | Sharp Corp | シリコン半導体基板および太陽電池用基板の製造方法 |
| JP3852147B2 (ja) * | 1996-12-27 | 2006-11-29 | Ｊｆｅスチール株式会社 | 太陽電池用多結晶シリコン・インゴットの製造方法 |
| JPH10203899A (ja) | 1997-01-23 | 1998-08-04 | Nikon Corp | アルカリ土類金属不純物の少ない蛍石及びその製造方法 |
| US5827773A (en) * | 1997-03-07 | 1998-10-27 | Sharp Microelectronics Technology, Inc. | Method for forming polycrystalline silicon from the crystallization of microcrystalline silicon |
| JP4147595B2 (ja) | 1997-03-25 | 2008-09-10 | 株式会社ニコン | 蛍石単結晶の製造方法 |
| JP3520957B2 (ja) | 1997-06-23 | 2004-04-19 | シャープ株式会社 | 多結晶半導体インゴットの製造方法および装置 |
| JP3523986B2 (ja) * | 1997-07-02 | 2004-04-26 | シャープ株式会社 | 多結晶半導体の製造方法および製造装置 |
| US5800611A (en) * | 1997-09-08 | 1998-09-01 | Christensen; Howard | Method for making large area single crystal silicon sheets |
| JPH11302096A (ja) * | 1998-02-18 | 1999-11-02 | Komatsu Electronic Metals Co Ltd | 単結晶製造用種結晶、単結晶製造用種結晶の製造方法、及び単結晶製造方法 |
| DE69912668T2 (de) * | 1998-02-26 | 2004-09-30 | Mitsubishi Materials Corp. | Kokille und Verfahren zur Herstellung von Siliziumstäben |
| JPH11240710A (ja) | 1998-02-27 | 1999-09-07 | Kawasaki Steel Corp | シリコン鋳造用鋳型 |
| EP0992618B1 (en) * | 1998-03-31 | 2007-01-03 | Nippon Mining & Metals Co., Ltd. | Method of manufacturing compound semiconductor single crystal |
| US6139627A (en) * | 1998-09-21 | 2000-10-31 | The University Of Akron | Transparent multi-zone crystal growth furnace and method for controlling the same |
| JP3670493B2 (ja) | 1998-10-09 | 2005-07-13 | 東芝セラミックス株式会社 | 単結晶引上装置 |
| US6106614A (en) * | 1998-10-15 | 2000-08-22 | Starmet Corp | Method and apparatus for fabricating near spherical semiconductor single crystal particulate and the spherical product produced |
| JP2000169281A (ja) | 1998-12-07 | 2000-06-20 | Komatsu Electronic Metals Co Ltd | 結晶体引上げ装置 |
| JP3872233B2 (ja) | 1999-06-29 | 2007-01-24 | 京セラ株式会社 | シリコン鋳造方法 |
| JP3931322B2 (ja) | 2000-01-11 | 2007-06-13 | 三菱マテリアル株式会社 | シリコンインゴット鋳造用鋳型およびその製造方法 |
| US6869477B2 (en) * | 2000-02-22 | 2005-03-22 | Memc Electronic Materials, Inc. | Controlled neck growth process for single crystal silicon |
| JP4521933B2 (ja) | 2000-02-22 | 2010-08-11 | エム・イー・エム・シー株式会社 | シリコン単結晶の成長方法 |
| WO2001068957A1 (en) | 2000-03-13 | 2001-09-20 | Ii-Vi Incorporated | Large size single crystal seed crystal fabrication by intergrowth of tiled seed crystals |
| US6423136B1 (en) * | 2000-03-20 | 2002-07-23 | Carl Francis Swinehart | Crucible for growing macrocrystals |
| US6277351B1 (en) * | 2000-03-20 | 2001-08-21 | Carl Francis Swinehart | Crucible for growing macrocrystals |
| JP2002220296A (ja) | 2000-11-24 | 2002-08-09 | Sumitomo Metal Ind Ltd | 単結晶引上げ装置 |
| CN100348782C (zh) * | 2001-01-26 | 2007-11-14 | Memc电子材料有限公司 | 具有基本上没有氧化诱生堆垛层错的空位为主的芯的低缺陷密度硅 |
| US6686978B2 (en) * | 2001-02-28 | 2004-02-03 | Sharp Laboratories Of America, Inc. | Method of forming an LCD with predominantly <100> polycrystalline silicon regions |
| US20020117718A1 (en) * | 2001-02-28 | 2002-08-29 | Apostolos Voutsas | Method of forming predominantly <100> polycrystalline silicon thin film transistors |
| US6635555B2 (en) * | 2001-02-28 | 2003-10-21 | Sharp Laboratories Of America, Inc. | Method of controlling crystallographic orientation in laser-annealed polycrystalline silicon films |
| US6664147B2 (en) * | 2001-02-28 | 2003-12-16 | Sharp Laboratories Of America, Inc. | Method of forming thin film transistors on predominantly <100> polycrystalline silicon films |
| US6849121B1 (en) * | 2001-04-24 | 2005-02-01 | The United States Of America As Represented By The Secretary Of The Air Force | Growth of uniform crystals |
| DE10124423A1 (de) * | 2001-05-18 | 2003-01-02 | Schott Glas | Züchten von orientierten Einkristallen mit wiederverwendbaren Kristallkeimen |
| US20030047130A1 (en) * | 2001-08-29 | 2003-03-13 | Memc Electronic Materials, Inc. | Process for eliminating neck dislocations during czochralski crystal growth |
| US7001543B2 (en) * | 2001-10-23 | 2006-02-21 | Kyocera Corporation | Apparatus and method for manufacturing semiconductor grains |
| US20030101924A1 (en) | 2001-11-15 | 2003-06-05 | Memc Electronic Materials, Inc. | Intermittent feeding technique for increasing the melting rate of polycrystalline silicon |
| US6926876B2 (en) * | 2002-01-17 | 2005-08-09 | Paul V. Kelsey | Plasma production of polycrystalline silicon |
| JP3724571B2 (ja) | 2002-01-17 | 2005-12-07 | 信越半導体株式会社 | シリコン単結晶の製造方法及びシリコン単結晶の製造装置 |
| JP2003342098A (ja) * | 2002-05-27 | 2003-12-03 | Canon Inc | フッ化物結晶の製造装置及び製造方法 |
| NO20022881L (no) | 2002-06-17 | 2003-12-18 | Elkem Materials | Fremgangsmåte og apparatur for granulering av metallsmelter |
| JP4357810B2 (ja) | 2002-07-25 | 2009-11-04 | 三菱マテリアル株式会社 | 鋳造装置及び鋳造方法 |
| CN1212432C (zh) | 2002-08-07 | 2005-07-27 | 中国科学院物理研究所 | 晶体生长工艺中的籽晶方位的控制方法 |
| JP4658453B2 (ja) | 2002-11-14 | 2011-03-23 | ヘムロック・セミコンダクター・コーポレーション | 流動性チップ、それを製造する方法及び使用する方法並びにその方法の実施に用いる装置 |
| US7229495B2 (en) * | 2002-12-23 | 2007-06-12 | Siltron Inc. | Silicon wafer and method for producing silicon single crystal |
| US7033433B2 (en) * | 2003-01-24 | 2006-04-25 | Corning Incorporated | Crystal growth methods |
| US20040211496A1 (en) * | 2003-04-25 | 2004-10-28 | Crystal Systems, Inc. | Reusable crucible for silicon ingot growth |
| US6913649B2 (en) * | 2003-06-23 | 2005-07-05 | Sharp Laboratories Of America, Inc. | System and method for forming single-crystal domains using crystal seeds |
| JP2005015264A (ja) * | 2003-06-25 | 2005-01-20 | Canon Inc | 結晶製造装置及び方法 |
| FR2856702B1 (fr) * | 2003-06-27 | 2005-09-09 | Centre Nat Rech Scient | Procede de synthese d'un materiau cristallin et materiau obtenu par ce procede |
| JP4081411B2 (ja) | 2003-07-29 | 2008-04-23 | 京セラ株式会社 | シリコン鋳造用鋳型およびその製造方法 |
| JP4081413B2 (ja) | 2003-07-31 | 2008-04-23 | 京セラ株式会社 | シリコン鋳造用鋳型およびその製造方法 |
| CN1485467A (zh) | 2003-08-08 | 2004-03-31 | 中国科学院上海光学精密机械研究所 | 大面积晶体的温梯法生长装置及其生长晶体的方法 |
| JP4328161B2 (ja) | 2003-09-24 | 2009-09-09 | 京セラ株式会社 | シリコン鋳造用鋳型 |
| JP2005104743A (ja) | 2003-09-26 | 2005-04-21 | Kyocera Corp | シリコン鋳造用鋳型 |
| US7195992B2 (en) * | 2003-10-07 | 2007-03-27 | Sandisk 3D Llc | Method of uniform seeding to control grain and defect density of crystallized silicon for use in sub-micron thin film transistors |
| JP2005152987A (ja) | 2003-11-27 | 2005-06-16 | Kyocera Corp | シリコン鋳造用鋳型およびその製造方法 |
| JP2005162599A (ja) * | 2003-12-03 | 2005-06-23 | Siltron Inc | 均一なベイカンシ欠陥を有するシリコン単結晶インゴット、シリコンウエハ、シリコン単結晶インゴットの製造装置、及びシリコン単結晶インゴットの製造方法 |
| JP4497943B2 (ja) | 2004-01-29 | 2010-07-07 | 京セラ株式会社 | シリコン鋳造用鋳型とそれを用いたシリコン鋳造装置 |
| US20050211408A1 (en) * | 2004-03-25 | 2005-09-29 | Bullied Steven J | Single crystal investment cast components and methods of making same |
| WO2005092791A1 (ja) | 2004-03-29 | 2005-10-06 | Kyocera Corporation | シリコン鋳造装置および多結晶シリコンインゴットの製造方法 |
| JP2005281068A (ja) | 2004-03-30 | 2005-10-13 | Toshiba Ceramics Co Ltd | シリコン種結晶およびシリコン単結晶の製造方法 |
| US7611577B2 (en) * | 2004-03-31 | 2009-11-03 | Nec Corporation | Semiconductor thin film manufacturing method and device, beam-shaping mask, and thin film transistor |
| JP4571826B2 (ja) | 2004-06-11 | 2010-10-27 | 日本電信電話株式会社 | 単結晶の製造方法 |
| WO2006005416A1 (de) | 2004-07-08 | 2006-01-19 | Deutsche Solar Ag | Herstellungsverfahren für kokille mit antihaftbeschichtung |
| JP4726454B2 (ja) | 2004-09-16 | 2011-07-20 | 京セラ株式会社 | 多結晶シリコンインゴットの鋳造方法、これを用いた多結晶シリコンインゴット、多結晶シリコン基板、並びに太陽電池素子 |
| JP4736401B2 (ja) | 2004-11-02 | 2011-07-27 | 住友金属工業株式会社 | 炭化珪素単結晶の製造方法 |
| JP4617854B2 (ja) | 2004-12-01 | 2011-01-26 | 株式会社デンソー | 電磁弁駆動装置 |
| JP4318635B2 (ja) | 2004-12-28 | 2009-08-26 | シャープ株式会社 | 板状結晶の製造装置および製造方法 |
| KR101227563B1 (ko) | 2005-02-03 | 2013-01-29 | 알이씨 웨이퍼 피티이. 엘티디. | 반도체 재료로 방향성 고형화 블록을 제조하는 방법 및장치 |
| JP2006219352A (ja) | 2005-02-10 | 2006-08-24 | Canon Inc | 単結晶製造装置及び単結晶製造方法 |
| WO2006093099A1 (ja) | 2005-02-28 | 2006-09-08 | Kyocera Corporation | 多結晶シリコン基板、多結晶シリコンインゴット及びそれらの製造方法、光電変換素子、並びに光電変換モジュール |
| JP2006308267A (ja) * | 2005-05-02 | 2006-11-09 | Iis Materials:Kk | るつぼ装置及びそれを用いた溶融材料の凝固方法 |
| EP1739209A1 (en) | 2005-07-01 | 2007-01-03 | Vesuvius Crucible Company | Crucible for the crystallization of silicon |
| JP2007019209A (ja) * | 2005-07-07 | 2007-01-25 | Sumco Solar Corp | 太陽電池用多結晶シリコンおよびその製造方法 |
| JP4872283B2 (ja) | 2005-09-12 | 2012-02-08 | パナソニック株式会社 | 単結晶の製造装置及び製造方法 |
| KR101400075B1 (ko) * | 2006-01-20 | 2014-05-28 | 에이엠지 아이디얼캐스트 솔라 코포레이션 | 광전 변환 소자용 기하학적 다결정 캐스트 실리콘 및 기하학적 다결정 캐스트 실리콘 바디들을 제조하는 방법 및 장치 |
| JP5279170B2 (ja) | 2006-03-28 | 2013-09-04 | セミコンダクター・コンポーネンツ・インダストリーズ・リミテッド・ライアビリティ・カンパニー | マスタ通信回路、スレーブ通信回路、及びデータ通信方法 |
| DE102006017622B4 (de) | 2006-04-12 | 2008-03-27 | Schott Ag | Verfahren und Vorrichtung zur Herstellung von multikristallinem Silizium |
| US8591649B2 (en) * | 2007-07-25 | 2013-11-26 | Advanced Metallurgical Group Idealcast Solar Corp. | Methods for manufacturing geometric multi-crystalline cast materials |
| WO2009015167A1 (en) * | 2007-07-25 | 2009-01-29 | Bp Corporation North America Inc. | Methods for manufacturing monocrystalline or near-monocrystalline cast materials |
| JP5319972B2 (ja) | 2008-06-30 | 2013-10-16 | 株式会社エヌ・ティ・ティ・データ | 店舗システム及び取引方法 |
| EP2337881A1 (en) * | 2008-08-27 | 2011-06-29 | BP Corporation North America Inc. | System and method for liquid silicon containment |
| TW201012988A (en) * | 2008-08-27 | 2010-04-01 | Bp Corp North America Inc | Gas recirculation heat exchanger for casting silicon |
| WO2010025163A1 (en) * | 2008-08-27 | 2010-03-04 | Bp Corporation North America Inc. | Apparatus and method of direct electric melting a feedstock |
| US20100055020A1 (en) * | 2008-08-27 | 2010-03-04 | Bp Corporation North America Inc | Apparatus and Method for a Crucible Design and Tipping Mechanism for Silicon Casting |
-
2007
- 2007-01-18 KR KR1020127013473A patent/KR101400075B1/ko not_active Expired - Fee Related
- 2007-01-18 BR BRPI0706659-7A patent/BRPI0706659A2/pt not_active Application Discontinuation
- 2007-01-18 EP EP07710181A patent/EP1974076A2/en not_active Withdrawn
- 2007-01-18 WO PCT/US2007/060663 patent/WO2007084936A2/en not_active Ceased
- 2007-01-18 AU AU2007205949A patent/AU2007205949B2/en not_active Ceased
- 2007-01-18 JP JP2008551520A patent/JP5486190B2/ja not_active Expired - Fee Related
- 2007-01-18 KR KR1020137027708A patent/KR20130133883A/ko not_active Ceased
- 2007-01-18 KR KR1020087020401A patent/KR101400068B1/ko not_active Expired - Fee Related
- 2007-01-18 AU AU2007205947A patent/AU2007205947B2/en not_active Ceased
- 2007-01-18 JP JP2008551522A patent/JP5514444B2/ja not_active Expired - Fee Related
- 2007-01-18 KR KR1020087020400A patent/KR101372593B1/ko not_active Expired - Fee Related
- 2007-01-18 US US11/624,411 patent/US8951344B2/en not_active Expired - Fee Related
- 2007-01-18 US US11/624,365 patent/US8048221B2/en not_active Expired - Fee Related
- 2007-01-18 KR KR1020127014739A patent/KR101470814B1/ko not_active Expired - Fee Related
- 2007-01-18 EP EP07718049A patent/EP1974077A2/en not_active Withdrawn
- 2007-01-18 WO PCT/US2007/060661 patent/WO2007084934A2/en not_active Ceased
- 2007-01-18 CA CA002636033A patent/CA2636033A1/en not_active Abandoned
- 2007-01-18 KR KR1020137027709A patent/KR20130133884A/ko not_active Ceased
- 2007-01-18 BR BRPI0706547-7A patent/BRPI0706547A2/pt not_active IP Right Cessation
- 2007-01-18 CA CA2636031A patent/CA2636031C/en not_active Expired - Fee Related
- 2007-01-19 TW TW096102076A patent/TWI445851B/zh not_active IP Right Cessation
- 2007-01-19 TW TW101106969A patent/TW201229330A/zh unknown
- 2007-01-19 TW TW096102078A patent/TWI379020B/zh not_active IP Right Cessation
-
2011
- 2011-10-19 US US13/276,447 patent/US20120042947A1/en not_active Abandoned
- 2011-10-19 US US13/276,700 patent/US8628614B2/en not_active Expired - Fee Related
- 2011-10-20 US US13/277,399 patent/US20120090537A1/en not_active Abandoned
-
2013
- 2013-12-05 US US14/097,637 patent/US20140102359A1/en not_active Abandoned
-
2014
- 2014-03-28 US US14/229,375 patent/US20140290740A1/en not_active Abandoned
- 2014-12-05 US US14/561,250 patent/US20150087105A1/en not_active Abandoned
Also Published As
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| BRPI0706659A2 (pt) | métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos | |
| CN101370970B (zh) | 制造单晶铸硅的方法和装置以及用于光电领域的单晶铸硅实体 | |
| US8709154B2 (en) | Methods for manufacturing monocrystalline or near-monocrystalline cast materials | |
| US8591649B2 (en) | Methods for manufacturing geometric multi-crystalline cast materials | |
| HK1129710A (en) | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics | |
| MX2008008923A (en) | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics | |
| HK1129711A (en) | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics | |
| AU2012203604A1 (en) | Methods and apparatuses for manufacturing geometric multicrystalline cast silicon and geometric multicrystalline cast silicon bodies for photovoltaics | |
| AU2012201561A1 (en) | Methods and apparatuses for manufacturing monocrystalline cast silicon and monocrystalline cast silicon bodies for photovoltaics |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| B11A | Dismissal acc. art.33 of ipl - examination not requested within 36 months of filing | ||
| B11Y | Definitive dismissal - extension of time limit for request of examination expired [chapter 11.1.1 patent gazette] |