CN102797035B - 多晶硅锭及其制造方法、太阳能电池 - Google Patents
多晶硅锭及其制造方法、太阳能电池 Download PDFInfo
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- CN102797035B CN102797035B CN201210017945.5A CN201210017945A CN102797035B CN 102797035 B CN102797035 B CN 102797035B CN 201210017945 A CN201210017945 A CN 201210017945A CN 102797035 B CN102797035 B CN 102797035B
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- Prior art keywords
- polycrystal silicon
- silicon ingot
- crystal layer
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- inculating crystal
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 266
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 266
- 239000010703 silicon Substances 0.000 title claims abstract description 266
- 238000000034 method Methods 0.000 title claims abstract description 131
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 53
- 239000013078 crystal Substances 0.000 claims abstract description 320
- 230000012010 growth Effects 0.000 claims abstract description 82
- 239000007788 liquid Substances 0.000 claims abstract description 69
- 238000002425 crystallisation Methods 0.000 claims abstract description 57
- 239000002994 raw material Substances 0.000 claims abstract description 44
- 230000008025 crystallization Effects 0.000 claims abstract description 36
- 238000005520 cutting process Methods 0.000 claims abstract description 15
- 230000008569 process Effects 0.000 claims description 63
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 38
- 239000007787 solid Substances 0.000 claims description 6
- 239000000155 melt Substances 0.000 claims description 4
- 239000006117 anti-reflective coating Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims description 2
- 238000000576 coating method Methods 0.000 claims description 2
- 230000009466 transformation Effects 0.000 abstract description 10
- 230000009467 reduction Effects 0.000 abstract description 9
- 239000012535 impurity Substances 0.000 description 34
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 26
- 229920005591 polysilicon Polymers 0.000 description 21
- 230000007547 defect Effects 0.000 description 19
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 16
- 229910052760 oxygen Inorganic materials 0.000 description 16
- 239000001301 oxygen Substances 0.000 description 16
- 238000005266 casting Methods 0.000 description 13
- 238000011068 loading method Methods 0.000 description 8
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000009833 condensation Methods 0.000 description 6
- 230000005494 condensation Effects 0.000 description 6
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 6
- 229910010271 silicon carbide Inorganic materials 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 238000007373 indentation Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 230000015572 biosynthetic process Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 239000010453 quartz Substances 0.000 description 4
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 3
- 239000004484 Briquette Substances 0.000 description 3
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 229910052796 boron Inorganic materials 0.000 description 3
- 238000001816 cooling Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000002829 reductive effect Effects 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 238000001311 chemical methods and process Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000000977 initiatory effect Effects 0.000 description 2
- 230000000670 limiting effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 238000007711 solidification Methods 0.000 description 2
- 230000008023 solidification Effects 0.000 description 2
- TVZRAEYQIKYCPH-UHFFFAOYSA-N 3-(trimethylsilyl)propane-1-sulfonic acid Chemical compound C[Si](C)(C)CCCS(O)(=O)=O TVZRAEYQIKYCPH-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000003698 anagen phase Effects 0.000 description 1
- 210000000746 body region Anatomy 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000002800 charge carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000004087 circulation Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000006911 nucleation Effects 0.000 description 1
- 238000010899 nucleation Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000005204 segregation Methods 0.000 description 1
- 150000003376 silicon Chemical class 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
- 238000004857 zone melting Methods 0.000 description 1
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
Description
Claims (15)
Priority Applications (1)
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CN201210017945.5A CN102797035B (zh) | 2011-05-26 | 2012-01-19 | 多晶硅锭及其制造方法、太阳能电池 |
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CN201110137149.0 | 2011-05-26 | ||
CN201110137149 | 2011-05-26 | ||
CN201110460972 | 2011-12-31 | ||
CN201110460972.5 | 2011-12-31 | ||
CN201210017945.5A CN102797035B (zh) | 2011-05-26 | 2012-01-19 | 多晶硅锭及其制造方法、太阳能电池 |
Publications (2)
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CN102797035A CN102797035A (zh) | 2012-11-28 |
CN102797035B true CN102797035B (zh) | 2016-02-10 |
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CN201210017945.5A Expired - Fee Related CN102797035B (zh) | 2011-05-26 | 2012-01-19 | 多晶硅锭及其制造方法、太阳能电池 |
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Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102943304A (zh) * | 2012-12-07 | 2013-02-27 | 英利能源(中国)有限公司 | 多晶硅锭及其制造方法 |
CN104790026B (zh) * | 2015-04-30 | 2019-11-29 | 江西赛维Ldk太阳能高科技有限公司 | 一种铸造类单晶用籽晶的重复利用方法 |
CN107523858A (zh) * | 2017-07-26 | 2017-12-29 | 晶科能源有限公司 | 一种籽晶铺设方法、类单晶硅锭的铸造方法及类单晶硅片 |
CN107475770A (zh) * | 2017-08-30 | 2017-12-15 | 晶科能源有限公司 | 一种类单晶籽晶及类单晶生长方法 |
CN107747121A (zh) * | 2017-11-07 | 2018-03-02 | 晶科能源有限公司 | 一种类单晶籽晶的铺设方法 |
CN108866623A (zh) * | 2018-07-10 | 2018-11-23 | 晶科能源有限公司 | 一种多晶硅铸锭方法 |
CN109972197A (zh) * | 2019-03-06 | 2019-07-05 | 赛维Ldk太阳能高科技(新余)有限公司 | 一种单晶硅铸锭用坩埚和单晶硅铸锭方法 |
CN110295391A (zh) * | 2019-07-31 | 2019-10-01 | 江苏协鑫硅材料科技发展有限公司 | 晶体硅锭的制备方法 |
CN113026092B (zh) * | 2019-12-09 | 2023-05-12 | 苏州阿特斯阳光电力科技有限公司 | 用于晶体硅铸锭的籽晶层结构与晶体硅锭的制备方法 |
CN111893556B (zh) * | 2020-06-30 | 2021-11-12 | 江苏协鑫硅材料科技发展有限公司 | 铸造单晶的籽晶铺设方法、铸造单晶硅锭及其制备方法 |
CN113894954B (zh) * | 2021-11-01 | 2024-02-02 | 青岛高测科技股份有限公司 | 硅棒切割磨削系统 |
Family Cites Families (10)
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US4236947A (en) * | 1979-05-21 | 1980-12-02 | General Electric Company | Fabrication of grown-in p-n junctions using liquid phase epitaxial growth of silicon |
CN1205362C (zh) * | 2001-10-18 | 2005-06-08 | 北京有色金属研究总院 | 直拉硅单晶炉热场的气流控制方法及装置 |
EP1493848B1 (en) * | 2002-04-04 | 2010-12-08 | Nippon Steel Corporation | Seed crystal of silicon carbide single crystal and method for producing ingot using same |
CN101370970B (zh) * | 2006-01-20 | 2014-05-14 | Amg艾迪卡斯特太阳能公司 | 制造单晶铸硅的方法和装置以及用于光电领域的单晶铸硅实体 |
BRPI0706659A2 (pt) * | 2006-01-20 | 2011-04-05 | Bp Corp North America Inc | métodos de fabricação de silìcio moldado e de célula solar, células solares, corpos e wafers de silìcio multicristalinos ordenados geometricamente continuos |
KR20100050510A (ko) * | 2007-07-20 | 2010-05-13 | 비피 코포레이션 노쓰 아메리카 인코포레이티드 | 시드 결정으로부터 캐스트 실리콘을 제조하는 방법 |
CN101591808A (zh) * | 2009-06-24 | 2009-12-02 | 浙江大学 | 掺锗的定向凝固铸造单晶硅及其制备方法 |
CN101864594A (zh) * | 2010-06-10 | 2010-10-20 | 晶海洋半导体材料(东海)有限公司 | 一种准单晶硅的铸锭方法 |
CN102797037B (zh) * | 2011-05-26 | 2015-08-12 | 浙江昱辉阳光能源有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
CN102268724B (zh) * | 2011-07-28 | 2014-04-16 | 英利能源(中国)有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
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Owner name: YUHUI YANGGUANG ENERGY RESOURCES CO., LTD., ZHEJIA Free format text: FORMER OWNER: RENESOLA ENERGY SAVING TECHNOLOGY CO., LTD. Effective date: 20130216 |
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Address after: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Applicant after: Zhejiang Yuhui Energy Saving Technology Co.,Ltd. Address before: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Applicant before: Zhejiang Sibosi New Material Technology Co.,Ltd. |
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Free format text: CORRECT: APPLICANT; FROM: NEW MATERIAL TECHNOLOGY CO., LTD. ZHEJIANG SI BOEN TO: RENESOLA ENERGY SAVING TECHNOLOGY CO., LTD. |
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Effective date of registration: 20130216 Address after: 314117 Yao Town Industrial Park, Jiaxing, Zhejiang, Jiashan Applicant after: RENESOLA ZHEJIANG Ltd. Address before: Jiaxing City, Zhejiang province 314117 Jiashan County Yaozhuang Manhattan Road No. 158 building three layer 1 Applicant before: Zhejiang Yuhui Energy Saving Technology Co.,Ltd. |
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Granted publication date: 20160210 Termination date: 20190119 |