CN1205362C - 直拉硅单晶炉热场的气流控制方法及装置 - Google Patents
直拉硅单晶炉热场的气流控制方法及装置 Download PDFInfo
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- CN1205362C CN1205362C CN 01136561 CN01136561A CN1205362C CN 1205362 C CN1205362 C CN 1205362C CN 01136561 CN01136561 CN 01136561 CN 01136561 A CN01136561 A CN 01136561A CN 1205362 C CN1205362 C CN 1205362C
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- airway
- crystal
- silicon
- single crystal
- flow
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 60
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 60
- 239000010703 silicon Substances 0.000 title claims abstract description 60
- 238000000034 method Methods 0.000 title claims abstract description 38
- 239000013078 crystal Substances 0.000 claims abstract description 134
- 239000007789 gas Substances 0.000 claims abstract description 55
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 47
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 39
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 claims abstract description 36
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 31
- 239000010439 graphite Substances 0.000 claims abstract description 31
- 229910052786 argon Inorganic materials 0.000 claims abstract description 24
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 238000013022 venting Methods 0.000 claims description 17
- 238000004321 preservation Methods 0.000 claims description 8
- 230000000694 effects Effects 0.000 claims description 6
- 239000010453 quartz Substances 0.000 abstract description 40
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 40
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 239000002994 raw material Substances 0.000 abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract description 3
- 230000007423 decrease Effects 0.000 abstract 1
- 230000003245 working effect Effects 0.000 description 17
- 238000010438 heat treatment Methods 0.000 description 14
- 229910052799 carbon Inorganic materials 0.000 description 8
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 6
- 238000009413 insulation Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- MKFJKMUVTVAAMW-UHFFFAOYSA-N [Ar].[Si]=O Chemical compound [Ar].[Si]=O MKFJKMUVTVAAMW-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000005265 energy consumption Methods 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000002210 silicon-based material Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229920000049 Carbon (fiber) Polymers 0.000 description 1
- 150000001485 argon Chemical class 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004917 carbon fiber Substances 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000001595 flow curve Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Images
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- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 01136561 CN1205362C (zh) | 2001-10-18 | 2001-10-18 | 直拉硅单晶炉热场的气流控制方法及装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 01136561 CN1205362C (zh) | 2001-10-18 | 2001-10-18 | 直拉硅单晶炉热场的气流控制方法及装置 |
Publications (2)
Publication Number | Publication Date |
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CN1412353A CN1412353A (zh) | 2003-04-23 |
CN1205362C true CN1205362C (zh) | 2005-06-08 |
Family
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Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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CN 01136561 Expired - Lifetime CN1205362C (zh) | 2001-10-18 | 2001-10-18 | 直拉硅单晶炉热场的气流控制方法及装置 |
Country Status (1)
Country | Link |
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CN (1) | CN1205362C (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100415945C (zh) * | 2005-12-26 | 2008-09-03 | 北京有色金属研究总院 | 一种提高直拉硅单晶炉热场部件寿命的方法及单晶炉 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100585031C (zh) * | 2006-12-06 | 2010-01-27 | 天津市环欧半导体材料技术有限公司 | <110>无位错硅单晶的制造方法 |
CN101319351B (zh) * | 2008-06-26 | 2010-04-21 | 常州中弘光伏有限公司 | 单晶炉 |
CN101319352B (zh) * | 2008-06-26 | 2010-06-02 | 常州中弘光伏有限公司 | 直拉式单晶生长炉 |
CN101525765B (zh) * | 2009-04-17 | 2012-09-26 | 江苏华盛天龙光电设备股份有限公司 | 一种硅单晶生长的热场 |
CN102453959A (zh) * | 2010-10-20 | 2012-05-16 | 中央大学 | 长晶炉的气流导引装置 |
CN102002753B (zh) * | 2010-12-13 | 2011-11-16 | 天津市环欧半导体材料技术有限公司 | 一种ф8英寸<110>直拉硅单晶的制造方法及其热系统 |
CN102797035B (zh) * | 2011-05-26 | 2016-02-10 | 浙江昱辉阳光能源有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
CN102797037B (zh) * | 2011-05-26 | 2015-08-12 | 浙江昱辉阳光能源有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
CN102797036B (zh) * | 2011-05-26 | 2016-06-15 | 浙江昱辉阳光能源有限公司 | 多晶硅锭及其制造方法、太阳能电池 |
CN102925958A (zh) * | 2012-08-16 | 2013-02-13 | 江西旭阳雷迪高科技股份有限公司 | 一种利用复熔工艺提高多晶晶体质量的方法 |
-
2001
- 2001-10-18 CN CN 01136561 patent/CN1205362C/zh not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100415945C (zh) * | 2005-12-26 | 2008-09-03 | 北京有色金属研究总院 | 一种提高直拉硅单晶炉热场部件寿命的方法及单晶炉 |
Also Published As
Publication number | Publication date |
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CN1412353A (zh) | 2003-04-23 |
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Free format text: FORMER OWNER: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Effective date: 20120129 Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GENERAL RESEARCH INSTITUTE FOR NONFERROUS METALS Effective date: 20120129 |
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Effective date of registration: 20120129 Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: GRINM Semiconductor Materials Co., Ltd. Address before: 100088, 2, Xinjie street, Beijing Co-patentee before: GRINM Semiconductor Materials Co., Ltd. Patentee before: General Research Institute for Nonferrous Metals |
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Owner name: GRINM ADVANCED MATERIALS CO., LTD. Free format text: FORMER NAME: GRINM SEMICONDUCTOR MATERIALS CO., LTD. |
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Address after: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee after: YOUYAN NEW MATERIAL CO., LTD. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: GRINM Semiconductor Materials Co., Ltd. |
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Owner name: GRINM SEMICONDUCTOR MATERIALS CO., LTD. Free format text: FORMER OWNER: GRINM ADVANCED MATERIALS CO., LTD. Effective date: 20150618 |
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Effective date of registration: 20150618 Address after: 101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Patentee after: GRINM Semiconductor Materials Co., Ltd. Address before: 100088 Beijing city Xicheng District Xinjiekou Avenue No. 2 Patentee before: YOUYAN NEW MATERIAL CO., LTD. |
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CI01 | Correction of invention patent gazette |
Correction item: Patentee|Address Correct: You Yan Semi Materials Co., Ltd.|101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road False: GRINM Semiconductor Materials Co., Ltd.|101300 Beijing city Shunyi District Shuanghe Linhe Industrial Development Zone on the south side of the road Number: 27 Volume: 31 |
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Free format text: CORRECT: PATENTEE; ADDRESS; FROM: GRINM SEMICONDUCTOR MATERIALS CO., LTD.;101300 SHUNYI, BEIJING TO: GRINM SEMICONDUCTOR MATERIALS CO., LTD.;101300 SHUNYI, BEIJING |
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CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee after: Youyan semiconductor silicon materials Co.,Ltd. Address before: 101300 south side of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Patentee before: GRINM SEMICONDUCTOR MATERIALS Co.,Ltd. |
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CI03 | Correction of invention patent | ||
CI03 | Correction of invention patent |
Correction item: Patentee|Address Correct: Youyan semiconductor silicon materials Co.,Ltd.|101300 South of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing False: Youyan semiconductor silicon materials Co.,Ltd.|101300 South of Shuanghe Road, Linhe Industrial Development Zone, Shunyi District, Beijing Number: 29-01 Volume: 37 |
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Granted publication date: 20050608 |
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