ATE475185T1 - Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten - Google Patents

Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten

Info

Publication number
ATE475185T1
ATE475185T1 AT05852349T AT05852349T ATE475185T1 AT E475185 T1 ATE475185 T1 AT E475185T1 AT 05852349 T AT05852349 T AT 05852349T AT 05852349 T AT05852349 T AT 05852349T AT E475185 T1 ATE475185 T1 AT E475185T1
Authority
AT
Austria
Prior art keywords
data
volatile memory
copy
exemplary embodiments
previous data
Prior art date
Application number
AT05852349T
Other languages
English (en)
Inventor
Sergey Anatolievich Gorobets
Yan Li
Original Assignee
Sandisk Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sandisk Corp filed Critical Sandisk Corp
Application granted granted Critical
Publication of ATE475185T1 publication Critical patent/ATE475185T1/de

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5628—Programming or writing circuits; Data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/12—Programming voltage switching circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Advance Control (AREA)
  • Non-Volatile Memory (AREA)
  • Memory System Of A Hierarchy Structure (AREA)
  • Techniques For Improving Reliability Of Storages (AREA)
AT05852349T 2004-12-14 2005-11-28 Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten ATE475185T1 (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/013,125 US7120051B2 (en) 2004-12-14 2004-12-14 Pipelined programming of non-volatile memories using early data
PCT/US2005/043020 WO2006065518A1 (en) 2004-12-14 2005-11-28 Pipelined programming of non-volatile memories using early data

Publications (1)

Publication Number Publication Date
ATE475185T1 true ATE475185T1 (de) 2010-08-15

Family

ID=36583610

Family Applications (1)

Application Number Title Priority Date Filing Date
AT05852349T ATE475185T1 (de) 2004-12-14 2005-11-28 Überlappende programmierung nichtflüchtiger speicher unter verwendung früherer daten

Country Status (10)

Country Link
US (3) US7120051B2 (de)
EP (1) EP1829045B1 (de)
JP (1) JP4372196B2 (de)
KR (1) KR101193584B1 (de)
CN (1) CN100543878C (de)
AT (1) ATE475185T1 (de)
DE (1) DE602005022487D1 (de)
IL (1) IL183833A0 (de)
TW (1) TWI413125B (de)
WO (1) WO2006065518A1 (de)

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* Cited by examiner, † Cited by third party
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US7120051B2 (en) 2006-10-10
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JP2008523542A (ja) 2008-07-03
US7345928B2 (en) 2008-03-18
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IL183833A0 (en) 2007-10-31
US20070014153A1 (en) 2007-01-18
KR20070101250A (ko) 2007-10-16
TWI413125B (zh) 2013-10-21
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TW200632921A (en) 2006-09-16
US7301805B2 (en) 2007-11-27
EP1829045A1 (de) 2007-09-05
JP4372196B2 (ja) 2009-11-25
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US20060126393A1 (en) 2006-06-15
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