JP2008523542A - 初期データを用いる不揮発性メモリのパイプライン形プログラミング - Google Patents
初期データを用いる不揮発性メモリのパイプライン形プログラミング Download PDFInfo
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Abstract
Description
図1〜7を参照して、明確な例を提供するために、その中で本発明の種々の態様が実現される特定の不揮発性メモリシステムについて説明する。図1は、フラッシュメモリシステムのブロック図である。マトリックスに配置された複数のメモリセルMを含むメモリセルアレイ1は、列制御回路2、行制御回路3、cソース制御回路4およびc−pウェル制御回路5によって制御される。列制御回路2は、メモリセル(M)に蓄積されているデータを読み出し、プログラミング動作中にメモリセル(M)の状態を判定し、プログラミングを促進するか、或いはプログラミングを抑制するようにビット線(BL)の電位レベルを制御するためにメモリセルアレイ1のビット線(BL)に接続されている。行制御回路3は、ワード線(WL)のうちの1つを選択し、読み出し電圧を印加し、列制御回路2により制御されるビット線電位レベルと結合されたプログラミング電圧を印加し、メモリセル(M)がその上に形成されているp形領域(図3において“c−pウェル”11と称されている)の電圧と結合された消去電圧を印加するようにワード線(WL)に接続されている。cソース制御回路4は、メモリセル(M)に接続された共通ソース線(図2において“cソース”と称されている)を制御する。c−pウェル制御回路5は、c−pウェル電圧を制御する。
図8Aは、各フローティングゲート記憶素子が各メモリセル(M)に2ビットのデータ、すなわち4つのデータ状態を記憶するときのメモリセルアレイ1についてのしきい値電圧分布を示す。曲線33は、消去された状態(Eデータ状態)であるアレイ1内のセルのしきい値レベルVT の分布を表し、負のしきい値電圧レベルである。AユーザデータおよびBユーザデータを各々記憶したメモリセルのしきい値電圧分布34および35は、0Vと1Vの間および1Vと2Vの間にあるように示されている。曲線36は、Cデータ状態にプログラムされたセルの分布を示し、2Vより高くかつ読み出しパス電圧の4.5Vより低くセットされた最高しきい値電圧レベルである。
前述したように、プログラミングの単位或いは“物理的ページ”は、同時にプログラムされ得るセルから構成される。多状態メモリの場合、各物理的ページは2つ以上の論理ページを記憶することができ、代表的な実施形態は各物理的ページに上側論理ページおよび下側論理ページを格納する。従来技術の2パスのプログラミングプロセスでは、所与の物理的ページに割り当てられた下側ページデータがプログラミング動作をいったん開始したならば、プログラミング動作を成功させるためにプロセスは完了するまでやり通されなければならない。同じ物理的ページに割り当てられた上側ページデータはメモリレジスタ内に存在してもよいけれども、従来技術は、この物理的ページのためのデータ内容の全てを含ませるために第1のプログラミングパスを中断し、後に再開することを許さない。従って、1つの所与の物理的ページにプログラムされるべきデータの全てがメモリ上に存在してもよいが、プログラミングプロセスは完全プログラミングシーケンスに移行できず、上側ページデータは下側ページが第1のパスのプログラミングプロセスを終えるまで待たなければならない。
背景技術の欄で説明したように、MLCフラッシュメモリの物理的ページが下側ページデータでプログラムされるときには、実際に下側ページデータおよび上側ページデータの両方が結局同じ物理的ページにプログラムされるとき、ユーザ(コントローラ)はプログラミングが終了して上側ページデータのプログラミングを開始できるようになるまで待たなければならない。これが、代表的な4状態セルの実施形態の図10Aに示されている。
背景技術の欄で説明したように、フラッシュまたは他のメモリにおいて1つのページが部分的にプログラムされるとき、例えば多数のセクタページまたは多数のプレーンのページが単一のセクタのデータだけでプログラムされるとき、ユーザ(コントローラ)は、同じページの別の部分的プログラミングを開始できるようになるために、プログラミングが終了するまで待たなければならない。このプロセスが図12に示されている。
フラッシュEEPROMメモリセルの前述した例は、電荷記憶素子として伝導性フローティングゲートを利用するタイプのセルに関して説明してきた。しかし、本発明の種々の態様は、本願明細書において参照により援用されている2004年5月7日に出願された米国特許出願第10/841,379号(特許文献26)に記載されている種々のメモリ技術と関連して使用され得る。例えば、本発明は、フローティングゲートの代わりに個々のメモリセルにおいて記憶素子として電荷捕獲誘電体を使用するシステムにおいても実施され得る。誘電体記憶素子はセルのチャネル領域内で伝導性コントロールゲートと基板との間に挟まれる。この誘電体はフローティングゲートと同じサイズおよび位置を有する個々の素子に分離され得るけれども、そのようにすることは、電荷がそのような誘電体によって局所的に捕獲されるので、普通は不要である。電荷捕獲誘電体は、選択トランジスタ等により占められる領域を除いてアレイ全体に広がることができる。
Claims (37)
- プログラミング動作中、1つの物理的ページを成すように形成された複数の多状態記憶ユニットにデータが書き込まれる、不揮発性メモリをプログラムする方法において、
1つの物理的ページに割り当てられた第1のデータ内容を受け取るステップであって、前記第1のデータ内容が前記物理的ページの記憶ユニットに格納可能なデータ内容の全てよりは少ないデータ内容を特定するステップと、
前記物理的ページへの前記第1のデータ内容のプログラミング動作を始めるステップと、
前記第1のデータ内容を受け取るステップの後、前記第1のデータ内容のプログラミング動作を完了する前に、前記物理的ページの前記記憶ユニットのための追加のデータ内容を受け取るステップと、
前記追加のデータ内容を受け取るステップの後、前記第1のデータ内容のプログラミング動作を完了する前に、前記第1のデータ内容のプログラミング動作を中断するステップと、
前記物理的ページへの前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始めるステップと、
を含む不揮発性メモリをプログラムする方法。 - 請求項1記載の方法において、
前記第1のデータ内容は、下側データページであり、前記追加の内容は上側データページである方法。 - 請求項1記載の方法において、
前記第1のデータ内容のプログラミング動作を中断する前に、前記追加のデータ内容が前記第1のデータ内容と同じ物理的ページに割り当てられていることを判定するステップをさらに含む方法。 - 請求項1記載の方法において、
前記第1のデータ内容のプログラミング動作を中断した後、前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始める前に、前記物理的ページの前記記憶ユニットの状態をベリファイするステップをさらに含む方法。 - 請求項4記載の方法において、
前記第1のデータ内容のプログラミング動作を中断した後、前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始める前に、1つ以上のプログラミングパラメータをリセットするステップをさらに含む方法。 - 請求項5記載の方法において、
前記プログラミング動作は、マグニチュードが増大するパルスの系列を含むプログラミング波形を使用する方法。 - 請求項6記載の方法において、
前記1つ以上のプログラミングパラメータは、前記プログラミング波形の振幅を含む方法。 - 請求項6記載の方法において、
前記1つ以上のプログラミングパラメータは、パルスの最大数を含む方法。 - 請求項6記載の方法において、
前記第1のデータ内容のプログラミング動作を中断した後、前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始める前に、前記物理的ページの前記記憶ユニットの状態をベリファイする動作をさらに含み、前記プログラミングパラメータは前記記憶ユニットの前記状態に基づいてセットされる方法。 - 請求項1記載の方法において、
前記物理的ページへの前記第1のデータ内容のプログラミング動作は、前記物理的ページの特定されていないデータ内容のために空白データを書き込むことを含む方法。 - 請求項1記載の方法において、
前記第1のデータ内容を受け取るステップの後、前記物理的ページへの前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を完了する前に、前記メモリの前記物理的ページの外側の部分で別のプログラミング動作を開始するステップをさらに含む方法。 - プログラミング動作中、複数の記憶ユニットを有する物理的ページにデータが書き込まれる、不揮発性メモリをプログラムする方法において、
物理的ページに割り当てられた第1のデータ内容を受け取るステップであって、前記第1のデータ内容が前記物理的ページを形成する前記記憶ユニットのうちの全てよりは少ない記憶ユニットのためのデータ内容を特定するステップと、
前記物理的ページへの前記第1のデータ内容のプログラミング動作を始めるステップと、
前記第1のデータ内容を受け取るステップの後、前記第1のデータ内容のプログラミング動作を完了する前に、前記物理的ページの、前記第1のデータ内容によりデータが特定されていない1つ以上の追加の記憶ユニットのための追加のデータ内容を受け取るステップと、
前記追加のデータ内容を受け取るステップの後、前記第1のデータ内容のプログラミング動作を完了する前に、前記第1のデータ内容のプログラミング動作を中断するステップと、
その後、前記物理的ページへの前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始めるステップと、
を含む不揮発性メモリをプログラムする方法。 - 請求項12記載の方法において、
前記ページは複数のセクタを含み、前記第1のデータ内容は前記ページの1つ以上で全部よりは少ないセクタを含み、前記追加のデータ内容は前記ページの1つ以上のセクタを含む方法。 - 請求項12記載の方法において、
前記物理的ページは、前記不揮発性メモリの複数のプレーンに分散されている方法。 - 請求項12記載の方法において、
前記第1のデータ内容のプログラミング動作を中断する前に、前記追加のデータ内容が前記第1のデータ内容と同じ物理的ページに割り当てられていることを判定するステップをさらに含む方法。 - 請求項12記載の方法において、
前記第1のデータ内容のプログラミング動作を中断した後、前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始める前に、前記物理的ページの前記記憶ユニットの状態をベリファイするステップをさらに含む方法。 - 請求項16記載の方法において、
前記物理的ページの前記記憶ユニットの状態をベリファイした後、前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始める前に、1つ以上のプログラミングパラメータをリセットするステップをさらに含む方法。 - 請求項17記載の方法において、
前記プログラミング動作は、マグニチュードが増大するパルスの系列を含むプログラミング波形を使用する方法。 - 請求項18記載の方法において、
前記1つ以上のプログラミングパラメータは、前記プログラミング波形の振幅を含む方法。 - 請求項18記載の方法において、
前記1つ以上のプログラミングパラメータは、パルスの最大数を含む方法。 - 請求項12記載の方法において、
前記物理的ページへの前記第1のデータ内容のプログラミング動作は、データが特定されていない前記物理的ページの前記記憶ユニットのために空白データを書き込むことを含む方法。 - 請求項12記載の方法において、
前記第1のデータ内容を受け取るステップの後、前記物理的ページへの前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を完了する前に、前記メモリの前記物理的ページの外側の部分で別のプログラミング動作を開始するステップをさらに含む方法。 - プログラミング動作中、複数の記憶ユニットにデータが書き込まれる、不揮発性メモリをプログラムする方法において、
前記複数の記憶ユニットに割り当てられた第1のデータ内容を受け取るステップであって、前記記憶ユニットが含むことのできるデータ内容の全てよりは少ないデータ内容のためのデータ内容を前記第1のデータ内容が特定するステップと、
前記複数の記憶ユニットへの前記第1のデータ内容のプログラミング動作を始めるステップと、
前記第1のデータ内容を受け取るステップの後、前記第1のデータ内容のプログラミング動作を完了する前に、前記複数の記憶ユニットに含まれ得る追加のデータ内容を受け取るステップと、
前記追加のデータ内容を受け取るステップの後、前記第1のデータ内容のプログラミング動作を完了する前に、前記第1のデータ内容のプログラミング動作を中断するステップと、
その後、前記複数の記憶ユニットへの前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始めるステップと、
を含む不揮発性メモリをプログラムする方法。 - 請求項23記載の方法において、
前記複数の記憶ユニットは多状態記憶ユニットであり、複数の論理ページを記憶する物理的ページを成すように形成され、前記第1のデータ内容は前記複数のページのうちの全てよりは少ないページのためのデータ内容を特定する方法。 - 請求項23記載の方法において、
前記第1のデータ内容は前記記憶ユニットのうちの全てよりは少ない記憶ユニットのためのデータ内容を特定し、前記追加のデータ内容は前記記憶ユニットのうちの前記第1のデータ内容によりデータが特定されていない1つ以上の追加の記憶ユニットのためのデータ内容を特定する方法。 - 請求項23に記載の方法において、
前記第1のデータ内容のプログラミング動作を中断した後、前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始める前に、前記複数の記憶ユニットの状態をベリファイするステップをさらに含む方法。 - 請求項26記載の方法において、
前記複数の記憶ユニットの状態をベリファイした後、前記第1のデータ内容および前記追加のデータ内容の同時プログラミング動作を始める前に、1つ以上のプログラミングパラメータをリセットするステップをさらに含む方法。 - 請求項27記載の方法において、
前記プログラミング動作は、マグニチュードが増大するパルスの系列を含むプログラミング波形を使用する方法。 - 請求項28記載の方法において、
前記1つ以上のプログラミングパラメータは、前記プログラミング波形の振幅を含む方法。 - 請求項28記載の方法において、
前記1つ以上のプログラミングパラメータは、パルスの最大数を含む方法。 - 請求項23記載の方法において、
前記複数の記憶ユニットへの前記第1のデータ内容のプログラミング動作は、前記記憶ユニットの特定されていないデータ内容のために空白データを書き込むことを含む方法。 - 請求項23記載の方法において、
前記第1のデータ内容を受け取るステップの後、前記複数の記憶ユニットへの前記第1データ内容および前記追加のデータ内容の同時プログラミング動作を完了する前に、前記複数の記憶ユニットを含まない前記メモリの部分で別のプログラミング動作を開始するステップをさらに含む方法。 - 1つの物理的ページを成すように形成された複数の記憶ユニットに複数のデータバッファから同時にデータをプログラムすることのできる、不揮発性メモリを操作する方法において、
データが前記複数のバッファから前記物理的ページに書き込まれるプログラミング動作を実行するステップと、
前記複数のバッファのうちの、全てよりは少ない1つ以上のバッファに対応する記憶ユニットのデータ内容が首尾良く書き込まれているかをベリファイする動作と、
前記複数のバッファのうち、内容が首尾良く書き込まれているとベリファイされた記憶ユニットに対応するもの以外のバッファに対応する記憶ユニットのために前記プログラミング動作を続行するステップと、
前記プログラミング動作を続行するステップと同時に、内容が首尾良く書き込まれているとベリファイされた記憶ユニットに対応するバッファに新しいデータ内容を受け取るステップと、
を含む不揮発性メモリを操作する方法。 - 請求項33記載の方法において、
前記記憶ユニットは、バイナリデータを記憶する方法。 - 請求項33記載の方法において、
前記記憶ユニットは、多状態データを記憶する方法。 - 請求項33記載の方法において、
前記物理的ページは、前記不揮発性メモリの複数のプレーンに分散されている方法。 - 請求項33記載の方法において、
前記バッファの各々は、データの1つ以上のセクタを記憶する方法。
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US7158421B2 (en) | 2005-04-01 | 2007-01-02 | Sandisk Corporation | Use of data latches in multi-phase programming of non-volatile memories |
US7120051B2 (en) * | 2004-12-14 | 2006-10-10 | Sandisk Corporation | Pipelined programming of non-volatile memories using early data |
US7849381B2 (en) | 2004-12-21 | 2010-12-07 | Sandisk Corporation | Method for copying data in reprogrammable non-volatile memory |
US7409473B2 (en) * | 2004-12-21 | 2008-08-05 | Sandisk Corporation | Off-chip data relocation |
US20060140007A1 (en) * | 2004-12-29 | 2006-06-29 | Raul-Adrian Cernea | Non-volatile memory and method with shared processing for an aggregate of read/write circuits |
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2004
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Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2008091011A (ja) * | 2006-09-29 | 2008-04-17 | Hynix Semiconductor Inc | フラッシュメモリ素子とそのプログラム方法 |
JP2012507803A (ja) * | 2008-10-30 | 2012-03-29 | マイクロン テクノロジー, インク. | メモリ・デバイスにおけるデータ転送およびプログラミング |
JP2015212992A (ja) * | 2014-05-01 | 2015-11-26 | 株式会社東芝 | 半導体記憶装置 |
KR20180137601A (ko) * | 2014-05-06 | 2018-12-27 | 마이크론 테크놀로지, 인크. | 다중 메모리 동작을 수행하기 위한 장치 및 방법 |
US10311957B2 (en) | 2014-05-06 | 2019-06-04 | Micron Technology, Inc. | Apparatuses and methods for performing multiple memory operations |
US10529428B2 (en) | 2014-05-06 | 2020-01-07 | Micron Technology, Inc. | Apparatuses and methods for performing multiple memory operations |
KR102097228B1 (ko) * | 2014-05-06 | 2020-05-28 | 마이크론 테크놀로지, 인크. | 다중 메모리 동작을 수행하기 위한 장치 및 방법 |
JP2018041523A (ja) * | 2016-09-07 | 2018-03-15 | 東芝メモリ株式会社 | 半導体記憶装置 |
US10796764B2 (en) | 2016-09-07 | 2020-10-06 | Toshiba Memory Corporation | Semiconductor memory device |
US10600484B2 (en) | 2017-12-20 | 2020-03-24 | Silicon Storage Technology, Inc. | System and method for minimizing floating gate to floating gate coupling effects during programming in flash memory |
Also Published As
Publication number | Publication date |
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ATE475185T1 (de) | 2010-08-15 |
US20060126390A1 (en) | 2006-06-15 |
KR101193584B1 (ko) | 2012-10-23 |
TWI413125B (zh) | 2013-10-21 |
DE602005022487D1 (de) | 2010-09-02 |
US7345928B2 (en) | 2008-03-18 |
WO2006065518A1 (en) | 2006-06-22 |
CN101107673A (zh) | 2008-01-16 |
US7301805B2 (en) | 2007-11-27 |
TW200632921A (en) | 2006-09-16 |
CN100543878C (zh) | 2009-09-23 |
KR20070101250A (ko) | 2007-10-16 |
EP1829045B1 (en) | 2010-07-21 |
JP4372196B2 (ja) | 2009-11-25 |
US20060126393A1 (en) | 2006-06-15 |
IL183833A0 (en) | 2007-10-31 |
US20070014153A1 (en) | 2007-01-18 |
EP1829045A1 (en) | 2007-09-05 |
US7120051B2 (en) | 2006-10-10 |
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