WO2012000685A2 - Interposer und verfahren zur herstellung von löchern in einem interposer - Google Patents
Interposer und verfahren zur herstellung von löchern in einem interposer Download PDFInfo
- Publication number
- WO2012000685A2 WO2012000685A2 PCT/EP2011/003300 EP2011003300W WO2012000685A2 WO 2012000685 A2 WO2012000685 A2 WO 2012000685A2 EP 2011003300 W EP2011003300 W EP 2011003300W WO 2012000685 A2 WO2012000685 A2 WO 2012000685A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- holes
- base substrate
- glass
- interposer
- range
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 16
- 239000011521 glass Substances 0.000 claims abstract description 48
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 239000004020 conductor Substances 0.000 claims abstract description 9
- 239000011799 hole material Substances 0.000 claims description 79
- 239000002585 base Substances 0.000 claims description 17
- 239000000463 material Substances 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 13
- 230000008878 coupling Effects 0.000 claims description 8
- 238000010168 coupling process Methods 0.000 claims description 8
- 238000005859 coupling reaction Methods 0.000 claims description 8
- 239000007789 gas Substances 0.000 claims description 6
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 239000003513 alkali Substances 0.000 claims description 3
- 230000006378 damage Effects 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 2
- 229910052785 arsenic Inorganic materials 0.000 claims description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 2
- 230000015556 catabolic process Effects 0.000 claims description 2
- 238000001020 plasma etching Methods 0.000 claims 1
- 239000003365 glass fiber Substances 0.000 description 10
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 229910052710 silicon Inorganic materials 0.000 description 5
- 239000010703 silicon Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000000203 mixture Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 239000011324 bead Substances 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- 238000006124 Pilkington process Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000005056 compaction Methods 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 230000004927 fusion Effects 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000007670 refining Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/0093—Working by laser beam, e.g. welding, cutting or boring combined with mechanical machining or metal-working covered by other subclasses than B23K
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/11—Printed elements for providing electric connections to or between printed circuits
- H05K1/115—Via connections; Lands around holes or via connections
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
- B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
- B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
- B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/12—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure
- B23K26/126—Working by laser beam, e.g. welding, cutting or boring in a special atmosphere, e.g. in an enclosure in an atmosphere of gases chemically reacting with the workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
- B23K26/382—Removing material by boring or cutting by boring
- B23K26/384—Removing material by boring or cutting by boring of specially shaped holes
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
- H01L21/486—Via connections through the substrate with or without pins
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49827—Via connections through the substrates, e.g. pins going through the substrate, coaxial cables
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
- H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
- H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2101/00—Articles made by soldering, welding or cutting
- B23K2101/36—Electric or electronic devices
- B23K2101/40—Semiconductor devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/30—Organic material
- B23K2103/42—Plastics
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
- H05K2201/10227—Other objects, e.g. metallic pieces
- H05K2201/10378—Interposers
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
- H05K2203/08—Treatments involving gases
- H05K2203/087—Using a reactive gas
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/0011—Working of insulating substrates or insulating layers
- H05K3/0017—Etching of the substrate by chemical or physical means
Definitions
- the invention relates to interposer for electrically connecting the terminals of a CPU chip with a
- Circuit board further to methods that are used in a critical manufacturing step of the interposer.
- a CPU chip as a processor core typically has several hundreds of contact points spaced close to each other on its underside over a relatively small area. Because of this close spacing, these contact points can not be mounted directly onto a circuit board, the so-called motherboard. It is therefore a
- an encapsulated with epoxy material glass fiber mat which is provided with a number of holes.
- On the surface of the glass fiber mat run tracks that lead into the respective holes to fill them, and on the other side of the
- the glass fiber mat has a coefficient of expansion of 15 to 17 ⁇ 10 -6
- the silicon-based core processor has one
- Hole diameter is limited to 250 to 450 m.
- the US 2002/0180015 Al shows a module for a variety of chips, the semiconductor devices and a
- the wiring substrate comprises a glass substrate having holes through
- the glass substrate has a wiring and an insulation layer. It is aimed at the
- US 5,216,207 shows multi-layer ceramic circuit boards with conductors of silver. The layers are baked at low temperatures. The boards have a thermal expansion coefficient close to that of silicon.
- US 2009/0321114 A1 shows a substrate unit for electrical testing with a multilayer
- Ceramic substrate Although the materials used have a coefficient of thermal expansion in the vicinity of
- Silicate glass The production process takes place in two
- the invention has for its object to provide an interposer for electrical connection between a CPU chip and a circuit board, which is economical to manufacture, thereby enabling the production of micro holes in the order of 20 m and 200 ⁇ hole diameter and the interposer body similar thermal expansion to that of the CPU chip material.
- Hole diameter the so-called aspect, should be between 1 and 10.
- the center distance of the holes should be between 120 pm and 400 ⁇ ⁇ .
- the hole shape should be at the hole inlet and outlet conical or
- the interposer according to the invention is characterized in that its plate-shaped base substrate is made of glass whose thermal expansion coefficient is in the range between 3.1 x 10 "6 and 3.4 x 10 ⁇ . 6 chip boards based on silicon have a coefficient of expansion between 3.2 x 10 "6 and 3.3 x 10 " 6. Between interposer and CPU chip, therefore, no great mechanical stresses are to be expected due to different thermal expansion behavior
- the number of holes in the interposer will be after the
- a typical number of holes is in the range of 1000 to 3000.
- the hole center distance of the holes is in the range of 50 ⁇ im and 700 ⁇ .
- the glass of the base substrate should contain an alkali content of less than 700 ppm. Such glass has a low thermal expansion coefficient as required and due to the high dielectric value very good signal insulating properties. Furthermore, the risk of contamination of silicon processors with alkalis is largely avoided.
- Interposer an arsenic or antimony content of less than 50 ppm.
- Interposer have a plate thickness that is below 1 mm, but not 30 ⁇ below.
- the number of holes of an interposer is chosen according to the needs and is of the order of 1000 to 3000 holes / cm 2 .
- the invention is intended to interposer with
- Micro holes below 100 ⁇ offer on the market.
- the holes are therefore packed tight, the center distance of the holes in the range between 150 ⁇ and 400 ⁇ can be.
- the holes need not all have the same diameter, it is possible that holes of different diameter in the plate-shaped
- the holes are generally slim cylindrically shaped, but can be at the hole entrance and
- Hole exit be equipped with rounded-broken edges.
- Wavelength range of the transparency of the glass so that the laser rays penetrate into the glass and are not already absorbed in the outer layers of the glass.
- Laser radiation of very high radiation intensity is used to cause local, athermal destruction of the glass along filamentous channels.
- filamentous channels are then widened to the desired diameter of the holes, taking one
- Lead hole material, and / or the filamentous channels are widened by the supply of reactive gases.
- the holes provided can also be exactly marked by HF coupling material, which is printed dot-shaped on the base substrate.
- Marked points are heated by RF energy in order to close the holes
- Breakthrough sites can be caused by supplied etching gas
- Fig. 1 is a schematic representation of a production of an interposer in longitudinal section
- Fig. 2 shows a second production. Detailed description
- holes 10 on a plate-shaped glass substrate 1 are marked by focused laser pulses 41 emanating from an arrangement 4 of lasers 40.
- the radiation intensity of these lasers is so strong that local, athermal destruction occurs along a filamentary channel 11 in the glass.
- filamentous channels 11 expanded into holes 12. It is possible to use opposing electrodes 6 and 7, which are supplied with high-voltage energy, which leads to dielectric breakthroughs through the glass substrate along the filamentary channels 11. These breakthroughs expand by electrothermal heating and
- conductor paths 13 are applied to the perforation points 10 on the upper side of the glass plate 1, and the holes 12 are filled with conductive material 14 to complete on the underside of the plate the connections to the contact points of a CPU chip or the like.
- Fig. 2 shows a further possibility of the production of microholes.
- the holes 10 are marked by precisely printed RF coupling material. At these points 10 radio frequency energy is coupled by means of electrodes 2, 3, so that the coupling points themselves and the glass material between the top side
- Dielectric strength of the material leads. When high voltage is applied, dielectric breakdowns occur along narrow channels 11. By further supplying high voltage energy, these narrow channels 11 can be widened to the size of the holes 12.
- conduction paths 13 are applied to the holes 12 on the top of the glass substrate, and the Holes are filled with conductive material 14 in order to produce, with turned glass plate 1, the connections for the CPU chip. It should be noted that interposers do not need to be made individually but glass substrate plates for one
- interposers can be processed by cutting the large format glass substrate plates to recover the individual interposers. Formats of glass substrate plates with edge lengths from 0.2 m to 3 m (or smaller) can be processed.
- Round disc formats can be up to 1 m in dimension
- T2 The temperature at the viscosity 10 2 dPas (referred to as T2 (° C), calculated from the Vogel-Fulcher-Tammann equation
- compositions (in% by weight based on oxide) and
- the glasses have the following advantages:
- the glasses have a high thermal shock resistance and good devitrification stability.
- the glasses are in the form of flat glasses with the various drawing methods, e.g. Micro-sheet down-draw, up-draw or overflow fusion
- the glasses are ideally suited for use as a substrate glass in the
- Thermal expansion coefficient is little different, occur less mechanical stress between these bonded layers or plates, and there will be no dislocation or cracks between the layers or plates.
- Interposer which are densely occupied with holes over previous interposers, take smaller substrate sizes, whereby the extent of different strains and shrinkages of the layers or plates involved and thus the risk of discarding and thus the
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Plasma & Fusion (AREA)
- Mechanical Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Printing Elements For Providing Electric Connections Between Printed Circuits (AREA)
- Glass Compositions (AREA)
- Production Of Multi-Layered Print Wiring Board (AREA)
- Re-Forming, After-Treatment, Cutting And Transporting Of Glass Products (AREA)
- Combinations Of Printed Boards (AREA)
- Structure Of Printed Boards (AREA)
Abstract
Description
Claims
Priority Applications (8)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US13/807,386 US20130210245A1 (en) | 2010-07-02 | 2011-07-04 | Interposer and method for producing holes in an interposer |
CN201180032797.8A CN102971838B (zh) | 2010-07-02 | 2011-07-04 | 内插板和用于在内插板中制造孔的方法 |
KR1020167001285A KR101726982B1 (ko) | 2010-07-02 | 2011-07-04 | 인터포저 및 인터포저에 구멍을 형성하는 방법 |
JP2013517092A JP6208010B2 (ja) | 2010-07-02 | 2011-07-04 | インターポーザおよびインターポーザに孔を生成する方法 |
KR1020137001035A KR101598260B1 (ko) | 2010-07-02 | 2011-07-04 | 인터포저 및 인터포저에 구멍을 형성하는 방법 |
EP11730223.2A EP2589072A2 (de) | 2010-07-02 | 2011-07-04 | Interposer und verfahren zur herstellung von löchern in einem interposer |
US16/256,093 US20190157218A1 (en) | 2010-07-02 | 2019-01-24 | Interposer and method for producing holes in an interposer |
US16/600,191 US11744015B2 (en) | 2010-07-02 | 2019-10-11 | Interposer and method for producing holes in an interposer |
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US16/600,191 Division US11744015B2 (en) | 2010-07-02 | 2019-10-11 | Interposer and method for producing holes in an interposer |
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2011
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- 2011-07-04 CN CN201180032797.8A patent/CN102971838B/zh active Active
- 2011-07-04 EP EP11730223.2A patent/EP2589072A2/de not_active Withdrawn
- 2011-07-04 US US13/807,386 patent/US20130210245A1/en not_active Abandoned
- 2011-07-04 WO PCT/EP2011/003300 patent/WO2012000685A2/de active Application Filing
- 2011-07-04 JP JP2013517092A patent/JP6208010B2/ja active Active
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US20200045817A1 (en) | 2020-02-06 |
JP2016195270A (ja) | 2016-11-17 |
JP2013531380A (ja) | 2013-08-01 |
JP6208010B2 (ja) | 2017-10-04 |
KR101726982B1 (ko) | 2017-04-13 |
DE102010025966B4 (de) | 2012-03-08 |
KR20130040224A (ko) | 2013-04-23 |
KR101598260B1 (ko) | 2016-02-26 |
CN102971838A (zh) | 2013-03-13 |
CN102971838B (zh) | 2015-11-25 |
JP2019041133A (ja) | 2019-03-14 |
KR20160013259A (ko) | 2016-02-03 |
US20130210245A1 (en) | 2013-08-15 |
US11744015B2 (en) | 2023-08-29 |
WO2012000685A3 (de) | 2012-03-08 |
EP2589072A2 (de) | 2013-05-08 |
DE102010025966A1 (de) | 2012-01-05 |
JP6841607B2 (ja) | 2021-03-10 |
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