JP6208010B2 - インターポーザおよびインターポーザに孔を生成する方法 - Google Patents
インターポーザおよびインターポーザに孔を生成する方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims description 23
- 239000011521 glass Substances 0.000 claims description 49
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 17
- 230000015556 catabolic process Effects 0.000 claims description 11
- 230000008878 coupling Effects 0.000 claims description 7
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 238000005553 drilling Methods 0.000 claims description 4
- 238000010438 heat treatment Methods 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 230000006378 damage Effects 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims 4
- 238000003491 array Methods 0.000 claims 1
- 238000000708 deep reactive-ion etching Methods 0.000 claims 1
- 238000010304 firing Methods 0.000 claims 1
- 239000003365 glass fiber Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 239000011148 porous material Substances 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 239000002585 base Substances 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 239000003513 alkali Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 238000005336 cracking Methods 0.000 description 2
- 230000009477 glass transition Effects 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000004580 weight loss Effects 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 1
- 229910017855 NH 4 F Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910006404 SnO 2 Inorganic materials 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000011324 bead Substances 0.000 description 1
- 239000011093 chipboard Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000008602 contraction Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 238000004031 devitrification Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000006025 fining agent Substances 0.000 description 1
- 239000005357 flat glass Substances 0.000 description 1
- 238000000265 homogenisation Methods 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000123 paper Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 239000005368 silicate glass Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
- 238000003856 thermoforming Methods 0.000 description 1
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Description
ガラスは、1620℃で、Pt/Irるつぼ中で、不可避の不純物は別として従来の実質的にアルカリを含まない原料から溶融された。溶融物はこの温度で1.5時間の間清澄され、次に、誘導加熱白金るつぼに注がれ、均質化のために1550℃で30分間撹拌された。
・熱膨張係数α20/300(10−6/K)
・密度ρ(g/cm3)
・DIN52324に従った膨張計によるガラス転移温度Tg(℃)
・104dPa・sの粘性での温度(T4(℃)と呼ばれる)
・Vogel−Fulcher−Tammann式から計算された102dPa・sの粘性での温度(T2(℃)と呼ばれる)
・50mm×50mm×2mmの寸法であり、すべての側面が研磨されたガラス・ボードの95℃で24時間の間5%塩酸で処理した後の重量損失(材料除去値)としての「HCl」耐酸性(mg/cm2)
・50mm×50mm×2mmの寸法であり、すべての側面が研磨されたガラス・ボードの23℃で20分間10%NH4F・HFで処理した後の重量損失(材料除去値)としての緩衝フッ化水素酸への「BHF」耐性(mg/cm2)
・屈折率nd
本発明によるガラスの組成(酸化物に基づいた重量%)および基本的性質
・2.8×10−6/Kと3.8×10−6/Kとの間、好ましい実施形態では、≦3.6×10−6/K、特に好ましい実施形態では、<3.2×10−6/Kの熱膨張係数α20/300であり、したがって、アモルファス・シリコンの膨張挙動およびさらに一層多結晶シリコンの膨張挙動と一致する。
・Tg>700℃であり、高いガラス転移温度、すなわち、高温耐性である。これは、生産関連収縮(「圧縮」)をできるだけ低くするのに、およびアモルファスSi層を被覆し、続いてそれをアニーリングするための基板としてガラスを使用するのに必須である。
・ρ<2.600g/cm3であり、低密度である。
・1350℃以下の104dPa・sの粘性での温度(作業点VA)、ならびに熱成形および溶解性に関して好適な粘性特性である1720℃以下の102dPa・sの粘性での温度である。
・nd≦1.526であり、低い屈折率である。
・緩衝フッ化水素酸溶液に対する良好な耐性からとりわけ明白であるように、高い耐化学性である。
Claims (5)
- CPUチップと回路ボードとの間の直接の電気的接続のためのインターポーザのボード形状ベース基板(1)に孔を生成する方法であって、
前記インターポーザにおいて、
前記CPUチップ及び前記回路ボードをそれぞれ直接接続する前記ボード形状ベース基板(1)は、第1のインターポーザ表面と第2のインターポーザ表面とを有する単層のガラスで製作され、
前記ボード形状ベース基板(1)の前記ガラスは、3.1×10−6/Kから3.4×10−6/Kの範囲の熱膨張係数を有し、
前記ボード形状ベース基板は、前記第1のインターポーザ表面及び前記第2のインターポーザ表面に対して横断的に多数の孔(12)を有し、前記孔は、それぞれが、前記第1のインターポーザ表面及び前記第2のインターポーザ表面の間を直接に延在する円筒状の壁からなり、前記孔の数は10cm−2から10000cm−2の範囲にわたり、
前記孔(12)は、20μmから200μmの範囲にわたる直径、及び50μmから700μmの範囲の中心間距離を有し、
導電性経路(13)は、前記CPUチップのための接続点を形成するために、前記回路ボードから延び、前記第1のインターポーザ表面を進み、各孔(12)に充填された導電性材料(14)によって前記孔(12)の中を延び、前記第2のインターポーザ表面まで延び、
前記方法は、
a)穿孔されるべき単層のガラスで製作された前記ボード形状ベース基板(1)を用意するステップと、
b)前記ボード形状ベース基板(1)の所定の穿孔点(10)に多数のレーザビーム・アレイ(4)を位置合わせするステップと、
c)前記ガラスに対して透過波長範囲で使用され、それぞれの繊維状チャネル(11)に沿って前記ガラスの局所非熱破壊を引き起こす放射強度をもつ集束レーザ・パルス(41)を発射するステップと、
d)前記孔(12)の所望の直径まで前記繊維状チャネル(11)を広げるステップと
を含み、
前記繊維状チャネル(11)のそれぞれは、誘電破壊または活性ガスを用いたエッチングにより前記孔(12)に拡大される、方法。 - 前記繊維状チャネル(11)の拡大が、誘電破壊による穿孔材料の電熱加熱と蒸発とによって達成される、請求項1に記載の方法。
- 前記繊維状チャネル(11)の拡大が反応性ガスによって達成される、請求項1に記載の方法。
- CPUチップと回路ボードとの間の直接の電気的接続のためのインターポーザのボード形状ベース基板(1)に孔を生成する方法であって、
前記インターポーザにおいて、
前記CPUチップ及び前記回路ボードをそれぞれ直接接続する前記ボード形状ベース基板(1)は、第1のインターポーザ表面と第2のインターポーザ表面とを有する単層のガラスで製作され、
前記ボード形状ベース基板(1)の前記ガラスは、3.1×10−6/Kから3.4×10−6/Kの範囲の熱膨張係数を有し、
前記ボード形状ベース基板は、前記第1のインターポーザ表面及び前記第2のインターポーザ表面に対して横断的に多数の孔(12)を有し、前記孔は、それぞれが、前記第1のインターポーザ表面及び前記第2のインターポーザ表面の間を直接に延在する円筒状の壁からなり、前記孔の数は10cm−2から10000cm−2の範囲にわたり、
前記孔(12)は、20μmから200μmの範囲にわたる直径、及び50μmから700μmの範囲の中心間距離を有し、
導電性経路(13)は、前記CPUチップのための接続点を形成するために、前記回路ボードから延び、前記第1のインターポーザ表面を進み、各孔(12)に充填された導電性材料(14)によって前記孔(12)の中を延び、前記第2のインターポーザ表面まで延び、
前記方法は、
a)穿孔されるべき単層のガラスで製作された前記ボード形状ベース基板を準備するステップと、
b)前記ボード形状ベース基板(1)に、RF結合点を準備するためにRF結合材料でドット印刷の形態で所期の穿孔点(10)に両側印刷するステップと、
c)板形状RF電極(2、3)が両側に配置された処理空間にドット印刷を有する前記ボード形状ベース基板(1)を導入するステップと、
d)前記RF結合点においてベース基板材料が軟化するまで、前記RF結合材料を主として加熱するRFエネルギーに、ドット印刷を有する前記ボード形状ベース基板(1)をさらすステップと、
e)前記電極(2、3)間に高電圧を発生させて、前記RF結合点から発出する誘電破壊の結果として狭いチャネル(11)を生成するステップとを含み、
前記狭いチャネル(11)のそれぞれは、誘電破壊または活性ガスを用いたエッチングにより前記孔(12)に拡大される、方法。 - 孔(12)への誘電破壊に由来する前記狭いチャネル(11)の拡大が深掘り反応性イオン・エッチングによって達成される、請求項4に記載の方法。
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US8039957B2 (en) * | 2009-03-11 | 2011-10-18 | Raytheon Company | System for improving flip chip performance |
US20100244276A1 (en) * | 2009-03-25 | 2010-09-30 | Lsi Corporation | Three-dimensional electronics package |
US8624374B2 (en) * | 2010-04-02 | 2014-01-07 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages with fan-out and with connecting elements for stacking and manufacturing methods thereof |
US8674513B2 (en) * | 2010-05-13 | 2014-03-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Interconnect structures for substrate |
DE102010025968B4 (de) | 2010-07-02 | 2016-06-02 | Schott Ag | Erzeugung von Mikrolöchern |
DE102010025967B4 (de) | 2010-07-02 | 2015-12-10 | Schott Ag | Verfahren zur Erzeugung einer Vielzahl von Löchern, Vorrichtung hierzu und Glas-Interposer |
DE102010025969A1 (de) * | 2010-07-02 | 2012-01-05 | Schott Ag | Locherzeugung mit Mehrfach-Elektroden |
WO2012129708A1 (de) | 2011-03-30 | 2012-10-04 | Selfrag Ag | Elektrodenanordnung für eine elektrodynamische fragmentierungsanlage |
EP2564999A1 (en) * | 2011-08-31 | 2013-03-06 | Asahi Glass Company, Limited | A method of generating a high quality hole or recess or well in a substrate |
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2010
- 2010-07-02 DE DE102010025966A patent/DE102010025966B4/de active Active
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2011
- 2011-07-04 KR KR1020167001285A patent/KR101726982B1/ko active IP Right Grant
- 2011-07-04 CN CN201180032797.8A patent/CN102971838B/zh active Active
- 2011-07-04 EP EP11730223.2A patent/EP2589072A2/de not_active Withdrawn
- 2011-07-04 US US13/807,386 patent/US20130210245A1/en not_active Abandoned
- 2011-07-04 WO PCT/EP2011/003300 patent/WO2012000685A2/de active Application Filing
- 2011-07-04 JP JP2013517092A patent/JP6208010B2/ja active Active
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Also Published As
Publication number | Publication date |
---|---|
US20200045817A1 (en) | 2020-02-06 |
WO2012000685A2 (de) | 2012-01-05 |
JP2016195270A (ja) | 2016-11-17 |
JP2013531380A (ja) | 2013-08-01 |
KR101726982B1 (ko) | 2017-04-13 |
DE102010025966B4 (de) | 2012-03-08 |
KR20130040224A (ko) | 2013-04-23 |
KR101598260B1 (ko) | 2016-02-26 |
CN102971838A (zh) | 2013-03-13 |
CN102971838B (zh) | 2015-11-25 |
JP2019041133A (ja) | 2019-03-14 |
KR20160013259A (ko) | 2016-02-03 |
US20130210245A1 (en) | 2013-08-15 |
US11744015B2 (en) | 2023-08-29 |
WO2012000685A3 (de) | 2012-03-08 |
EP2589072A2 (de) | 2013-05-08 |
DE102010025966A1 (de) | 2012-01-05 |
JP6841607B2 (ja) | 2021-03-10 |
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