WO1998022636A1 - Cible pour pulverisation, et film antiferromagnetique et element a effet magnetoresistant formes a l'aide de ladite cible - Google Patents
Cible pour pulverisation, et film antiferromagnetique et element a effet magnetoresistant formes a l'aide de ladite cible Download PDFInfo
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- WO1998022636A1 WO1998022636A1 PCT/JP1997/004232 JP9704232W WO9822636A1 WO 1998022636 A1 WO1998022636 A1 WO 1998022636A1 JP 9704232 W JP9704232 W JP 9704232W WO 9822636 A1 WO9822636 A1 WO 9822636A1
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F10/00—Thin magnetic films, e.g. of one-domain structure
- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
- H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/90—Magnetic feature
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/11—Magnetic recording head
- Y10T428/1107—Magnetoresistive
- Y10T428/1121—Multilayer
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
- Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
- Y10T428/264—Up to 3 mils
- Y10T428/265—1 mil or less
Definitions
- the present invention relates to a sputtering target, an antiferromagnetic film formed using the sputtering target, and a magnetoresistance effect element.
- MR elements magnetoresistive effect elements
- MR film magnetoresistive film
- permalloy Ni 8Q FenQ (at%) alloy ( permalloy ) showing the anisotropic magnetoresistive effect (AMR)
- AMR film magnetoresistance ratio MR change rate
- GMR giant magnetoresistance effect
- the spin valve film has a ferromagnetic layer / non-magnetic layer
- a GMR is obtained by pinning the magnetic layer of one of the ferromagnetic layers.
- a technique that uses exchange coupling between an antiferromagnetic film and a ferromagnetic film has become widespread.
- an FeMn alloy is also widely used as a constituent material of the antiferromagnetic film.
- the 7-FeMn alloy has low corrosion resistance and has the disadvantage that it is particularly corrosion- and water-soluble. For this reason, an MR element using an antiferromagnetic material film made of an FeMn alloy is susceptible to corrosion, especially due to atmospheric moisture, during the processing of the element and head.
- an MR element using an antiferromagnetic material film made of an FeMn alloy is susceptible to corrosion, especially due to atmospheric moisture, during the processing of the element and head.
- the exchange coupling film between the antiferromagnetic film and the ferromagnetic film is required to have an exchange coupling force of 200 Oe or more at 393 K, for example, from the viewpoint of reliability.
- the temperature characteristics of the exchange coupling force be good in addition to the exchange coupling force at room temperature. Is required.
- the temperature characteristics of the exchange coupling force it is desirable that the blocking temperature at which the exchange coupling force between the ferromagnetic film and the antiferromagnetic film is lost is as high as possible.
- the FeMn alloy has a low blocking temperature of 443 K or lower, and has very poor temperature characteristics of exchange coupling force.
- US Pat. No. 5,315,468 discloses that a single Mn alloy such as a NiMn alloy having a face-centered tetragonal crystal structure can be used as an antiferromagnetic film. Has been described. It has been shown that the use of an antiferromagnetic film made of a ⁇ —Mn alloy does not reduce the exchange coupling force between the antiferromagnetic film and the ferromagnetic film even at high temperatures.
- an IrMn alloy having a face-centered cubic crystal structure has been proposed as an antiferromagnetic film having a high blocking temperature, a large exchange coupling force, and excellent corrosion resistance.
- an antiferromagnetic film with the same crystal structure What? Alloys such as 1 ⁇ ! 1 alloy ⁇ 1 11 Mn alloys and other alloys other than FeMn alloys are known (US Pat. Nos. 4,103,315 and 5,315,468) Etc.).
- Mn alloys such as IrMn alloy, PtMn alloy, RhMn alloy, NiMn alloy, PdMn alloy, CrMn alloy have excellent corrosion resistance.
- the blocking temperature of the exchange coupling membrane can be increased. Therefore, it is attracting attention as an antiferromagnetic material that improves the long-term reliability of MR devices.
- a sputtering method is generally employed for forming an antiferromagnetic film.
- An antiferromagnetic film is formed by sputtering using a sputtering target made of each element constituting the Mn alloy as described above.
- antiferromagnetic films formed using conventional sputtering targets tend to have non-uniform in-plane film compositions.
- Such an exchange coupling film of an antiferromagnetic film and a ferromagnetic film has a problem that a sufficient exchange coupling force cannot be obtained.
- MR elements and MR heads using such an exchange coupling film suffer from problems such as the antiferromagnetic material film being adversely affected by other layers constituting them and the exchange coupling characteristics being likely to deteriorate. Have.
- the conventional sputtering target has a problem that a large compositional deviation easily occurs in the film composition between the initial stage of sputtering and the vicinity of the life end. Such a temporal change in the film composition of the antiferromagnetic film also causes deterioration of the exchange coupling characteristics.
- An object of the present invention is to stabilize the film composition and film quality of an antiferromagnetic film made of an Mn alloy having excellent corrosion resistance and thermal characteristics, and to provide a sputtering ring target with a small composition deviation up to a rift. Is to do. And a sputtering target capable of forming an antiferromagnetic material film with a stable and sufficient exchange coupling force at room and high temperature regions with good reproducibility. And an antiferromagnetic film having such characteristics. Another object of the present invention is to provide a magnetoresistive element capable of obtaining stable characteristics and output with good reproducibility by using an antiferromagnetic film having such characteristics. . Disclosure of the invention
- the first sputtering target in the present invention is substantially Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru. , Os, Cr, Mo, W and Re, at least one R element selected from the group consisting of Mn and a sputtering target, wherein at least a part of the target structure is the R element. And at least one selected from an alloy phase and a compound phase of Mn and Mn.
- the second sputtering target of the present invention substantially comprises Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, 0 a sputtering target comprising at least one R element selected from s, Cr, Mo, W, and Re; and Mn, wherein at least a part of the target tissue comprises the R element It is characterized by having at least one selected from an alloy phase and a compound phase of Mn, and having an oxygen content of 1% by weight or less (including 0).
- the first and second sputtering targets are further characterized in that the particle size of the remaining Mn excluding Mn constituting the alloy phase and the compound phase is 50 / m or less.
- the third sputtering target of the present invention substantially comprises Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, and Ru. , 0 s, at least one R element selected from Cr, Mo, W and Re And a sputtering target comprising Mn, wherein the oxygen content is 1% by weight or less (including 0).
- the sputtering target of the present invention preferably further has a carbon content of 0.3% by weight or less (including 0), and a relative density of 90% or more.
- the sputtering target of the present invention contains, for example, Mn at 30 atomic% or more.
- the sputtering target of the present invention further comprises at least one selected from Be, Ti, Zr, Hf, Zn, Cd, Al, Ga, In, Si, Ge, Sn and N. Both may contain one kind of element.
- the antiferromagnetic film of the present invention is characterized by being formed by sputtering using the above-described sputtering target of the present invention.
- a magnetoresistive effect element according to the present invention includes the above-described antiferromagnetic film according to the present invention.
- a magnetoresistive element of the present invention includes, for example, the antiferromagnetic film of the present invention described above, and a ferromagnetic film exchange-coupled to the antiferromagnetic film. Further, the antiferromagnetic film of the present invention described above, a first ferromagnetic layer exchange-coupled to the antiferromagnetic film, and a first ferromagnetic layer and a non-magnetic layer interposed therebetween A second ferromagnetic layer.
- the magnetoresistance effect element of the present invention is used, for example, for a magnetic head.
- the magnetoresistive effect element of the present invention can also be used for a magnetic storage device such as MRAM, a magnetic sensor, and the like.
- the R element is distributed in the sputtering target as an alloy phase or a compound phase with Mn.
- the composition in the evening get can be made uniform.
- the target tissue approaches a uniform state.
- the uniformity of the composition and structure can be improved by distributing the R element as an alloy phase or a compound phase with Mn. it can.
- Lowering the oxygen concentration and increasing the density of the sputtering target greatly contributes to higher purity and lower oxygen concentration of the antiferromagnetic film formed using the sputtering target. Furthermore, it contributes to the improvement of the film quality and film composition of the antiferromagnetic material film (deviation from the target composition).
- the antiferromagnetic film having excellent in-plane film composition uniformity can be stably formed. can get. Furthermore, the uniformity of the composition and the structure of the sputtering target is effective in suppressing the composition deviation from the initial stage of sputtering to the reef of the target. The same is true for lowering the oxygen concentration and increasing the density of the sputtering target.
- an antiferromagnetic film excellent in stability of the film composition and uniformity of the in-plane film composition can be obtained with good reproducibility.
- laminating such an antiferromagnetic film with, for example, a ferromagnetic film to form an exchange coupling film it is possible to stably obtain sufficient characteristics such as sufficient exchange coupling force, good corrosion resistance and heat resistance.
- FIG. 1 is a sectional view showing a configuration of an embodiment of an exchange coupling film using an antiferromagnetic film of the present invention.
- FIG. 2 is a cross-sectional view showing the configuration of one embodiment of the magnetoresistive element of the present invention.
- FIG. 3 is a sectional view showing a modification of the magnetoresistive element shown in FIG.
- FIG. 4 is a sectional view showing the configuration of another embodiment of the magnetoresistive element of the present invention.
- FIG. 5 is a cross-sectional view showing a configuration of an embodiment of a magnetic head using the magnetoresistive element of the present invention.
- FIG. 6 is a sectional view showing a modification of the magnetic head shown in FIG.
- FIG. 7 is a diagram illustrating the composition dependence of the exchange coupling force of an antiferromagnetic film formed using a sputtering target according to the third embodiment of the present invention.
- FIG. 8 is a diagram showing the results of a corrosion resistance test of an exchange-coupled film sample formed using a sputtering target according to Example 7 of the present invention.
- FIG. 9 is a view showing a measurement result of an exchange bias force of an exchange-coupling film sample formed by using a sputtering target according to the seventh embodiment of the present invention.
- FIG. 10 is a diagram showing a measurement result of a blocking temperature of an exchange-coupling film sample formed using a sputtering ring target according to Example 7 of the present invention.
- Ni, Pd, Pt, Co, Rh, Ir, V, Nb, Ta, Cu, Ag, Au, Ru, ss, At least one R element selected from Cr, Mo, W, and Re and Mn are included.
- Such an antiferromagnetic film made of the RMn alloy and formed using the sputtering target of the present invention is used as, for example, an exchange coupling film by being laminated with various ferromagnetic films. .
- the Mn content is appropriately set based on the combination with the R element, but it is preferable that the Mn content be at least 10 atomic% or more. Good if Mn content is too low Good exchange coupling strength cannot be obtained. On the other hand, if the content of the R element is too small, the corrosion resistance tends to decrease. For this reason, the Mn content is preferably in the range of 10 to 98 atomic%.
- the present invention is particularly effective for a sputtering target having a Mn-rich composition such that the Mn content is 30 atomic% or more.
- a more preferable range of the Mn content is set based on the selected R element.
- the Mn content is preferably in the range of 40 to 98 atomic%, and more preferably 60 to 98 atomic%. It is desirable that the content be in the range of about 95 atomic%.
- the face-centered cubic crystal structure is generally stable in the above composition range. Since the R Mn alloy having at least part of the crystal structure has a face-centered cubic structure, it has a particularly high Neel temperature (the temperature at which an antiferromagnet loses antiferromagnetism). It can be further improved.
- the thermal stability is improved when the crystal structure is a face-centered tetragonal system. Therefore, it is preferable that the composition range in which such a crystal structure is stable, that is, the Mn content be in the range of 30 to 70 atomic%.
- the R element is Cr
- the RMn alloy has a body-centered cubic structure or a body-centered tetragonal structure, and the Mn content is preferably in the range of 30 to 70 atomic%.
- the R element is Pt
- both face-centered cubic and face-centered tetragonal have excellent thermal stability.
- the Mn content is preferably in the range of 30 to 98 atomic%, particularly preferably in the range of 60 to 95 atomic%.
- the sputtering target of the present invention includes, in addition to the R element described above, Be, Ti, Zr, Hf, Zn, Cd, Al, Ga, In, Si, G At least one element (element A) selected from e, Sn and N may be contained.
- the antiferromagnetic film made of RMn alloy has the above composition range and results. Although good corrosion resistance is obtained based on the crystal structure and the like as compared with the conventional FeMn alloy, the corrosion resistance can be further improved by including such additional components. However, if the element A is contained in an excessively large amount, the exchange binding force may be reduced.
- the content of the element A is preferably at most 40 atomic%, more preferably at most 30 atomic%.
- the sputtering target of the present invention has at least one part selected from an alloy phase of R element and Mn and a compound phase of R element and Mn as at least —part of the target structure. .
- an Mn-rich composition range is applied, the distribution of the R element in particular tends to be non-uniform.
- the R element is distributed in the sputtering target as an alloy phase or a compound phase with Mn.
- these compound phases include I r M n 3.
- the R element is distributed in the target structure as such a Mn rich compound phase or alloy phase, and the composition of the target is made uniform by minimizing the amount of the R element existing as a single phase.
- the target structure metal structure
- the uniformity of the composition and structure can be improved by distributing the R element as an alloy phase or compound phase with Mn.
- the alloy phase or compound phase of the R element and Mn may be an alloy or compound of each R element and Mn, or It may be an alloy or a compound of at least R elements and Mn.
- the alloy phase or compound phase of the R element and Mn may be an alloy or compound of each R element and Mn, or It may be an alloy or a compound of at least R elements and Mn.
- Ir and Rh are selected as R elements, At least one of binary alloys and compounds, binary alloys and compounds of Rh and Mn, and ternary alloys and compounds of Ir, Rh, and Mn may be present. .
- Mn constituting the alloy phase or the compound phase described above it can exist as a Mn single phase.
- a part of the R element is allowed to exist as a single phase, but it is preferable to reduce the ratio as much as possible for the above-mentioned reason.
- the particle size of the remaining Mn other than the Mn constituting the alloy phase or the compound phase is 50 ⁇ or less. If the particle size of Mn remaining as a single phase is large, Mn is segregated microscopically. In order to eliminate such nonuniform composition and structure due to Mn deflection, the maximum particle size of Mn as a single phase is preferably 50 ID or less. The average particle size of the Mn is preferably in the range of 10 to 40 m.
- the Mn particle size is particularly effective for Mn rich target compositions. However, if the average particle size is too small, it will cause an increase in the oxygen content. More preferably, the maximum particle size of Mn is 30 m or less.
- the particle size of Mn means the diameter of the smallest circle surrounding the Mn particle.
- an antiferromagnetic film having excellent in-plane film composition uniformity can be stabilized. Obtained.
- the homogenization of the composition and structure of the sputtering target is also effective in suppressing the composition deviation from the initial stage of the sputtering to the life end of the target.
- an antiferromagnetic film having excellent film composition stability can be obtained with good reproducibility.
- the obtained antiferromagnetic film has excellent uniformity of the in-plane film composition.
- the oxygen content in the target is 1% by weight or less (including 0). If the oxygen content in the target is too large, it becomes difficult to control the composition of Mn, especially during sintering, and the oxygen content in the antiferromagnetic film obtained by sputtering is increased. These may cause deterioration of characteristics of the antiferromagnetic film. Furthermore, if the oxygen content in the target is large, it becomes difficult to increase the density of the target. In addition, the processability is deteriorated, and the target is liable to crack during sputtering. A more preferred oxygen content is 0.7% by weight or less, and still more preferably 0.1% by weight or less.
- the carbon content in the target is preferably 0.3% by weight or less (including 0).
- a more preferable carbon content is 0.2% by weight or less, and further preferably 0.01% by weight or less.
- the oxygen content and the carbon content in the sputtering target it is possible to easily increase the density of the sputtering target having the Mn-rich target composition. it can. Furthermore, lowering the oxygen concentration and carbon concentration of the sputtering target can be achieved by increasing the purity of the antiferromagnetic film formed by using it and improving the film quality and film composition (deviation from the target composition). Contribute to such. These improve the properties of the antiferromagnetic film such as the exchange coupling magnetic field and the blocking temperature.
- the relative density of the sputtering target of the present invention is preferably 90 ° or more. If the density of the sputtering target is too low, particles are likely to be generated due to abnormal discharge at a defective portion of the target at the time of sputtering. When the particles are dispersed in the antiferromagnetic film, As well as the yield. More preferred relative density is
- the sputtering target of the present invention satisfies one of a configuration in which a part of the evening target tissue is used as an alloy phase or a compound phase and a configuration in which the oxygen content is 1% by weight or less. However, at least the expected effects can be obtained. However, it is particularly preferable to satisfy all of these configurations.
- any of the sintering method and the melting method may be applied.
- the finest raw material is used. It is preferable to use a powder (raw powder of each of the R element and Mn).
- a powder raw powder of each of the R element and Mn.
- an R element powder such as a fine Ir powder and a fine Mn powder
- a uniform mixed state can be obtained at a stage before sintering, and the mixing between the R element and Mn can be obtained.
- the reaction can be accelerated.
- the average particle size of the raw material powder of the R element is in the range of 20 to 50 m.
- the average particle diameter of the raw material powder of Mn is preferably 100 zm or less, particularly preferably in the range of 40 to 50 ⁇ .
- Various known mixing methods such as a ball mill and a V-mixer can be used for mixing the raw material powders.
- a small amount of carbon may be added as a deoxidizing agent to further reduce oxygen in the raw material powder.
- carbon itself since carbon itself also causes a deterioration in characteristics of the formed antiferromagnetic film, it is preferable to set the conditions so that the carbon content in the target is 0.3% by weight or less as described above. .
- the inside of the mixing container is set to a vacuum atmosphere or an atmosphere replaced with an inert gas. Is preferred. Even when a mixing method other than the ball mill mixing is applied, it is preferable to take a similar measure for preventing contamination of impurities.
- the mixing time shall be set appropriately according to the mixing method, the amount of powder to be charged, the size of the mixing container, and the like. If the mixing time is too short, a uniform mixed powder may not be obtained. On the other hand, if the mixing time is too long, the risk of increasing the amount of impurities increases.
- the mixing time is appropriately set in consideration of these. For example, when using a 10 liter mixing vessel and mixing 5 kg of powder with ball mill, it is appropriate to set the mixing time to about 48 hours.
- a target material is prepared by sintering the mixed powder of the raw material powder of the R element and the raw material powder of Mn as described above.
- high density sintered body It is preferable to apply the resulting hot press method or HIP method.
- the sintering temperature should be set according to the type of the raw material powder. In particular, in order to promote the reaction between the R element and Mn, the sintering temperature should be between It is preferable to set the range.
- the pressing force at the time of hot pressing or ⁇ , ⁇ ⁇ be 20MPa or more, which enables high density o
- the obtained target material is machined into a predetermined target shape.
- the sputtering target of the present invention can be obtained.
- the sintering method can be manufactured at a lower cost than the melting method described below, and the R element can be present as an alloy phase or compound phase with Mn. In addition, it is possible to stably produce a sputtering target having a reduced oxygen content and carbon content. Furthermore, the sintering method has an advantage that the yield of rare metal raw materials used for the melting method described later is high.
- the raw material of the R element and the raw material of Mn mixed in a predetermined ratio are melted.
- a general induction type electric furnace can be applied.
- it may be performed in an inert gas.
- arc melting or electron beam melting can be applied.
- the ingot obtained by the above-described melting method is, for example, plastic After that, it is machined to a predetermined target shape. By joining this to the backing plate by, for example, soldering, the sputtering target of the present invention can be obtained.
- the melting method similarly to the sintering method described above,
- the antiferromagnetic film of the present invention can be obtained by forming a sputtering film by a conventional method using the above-described sputtering target of the present invention.
- the antiferromagnetic film formed using the sputtering target of the present invention is excellent in stability of the film composition and uniformity of the in-plane film composition.
- excellent characteristics such as sufficient exchange coupling force, good corrosion resistance and heat resistance can be stably obtained. .
- FIG. 1 is a diagram schematically showing a configuration of an embodiment of an exchange coupling film using an antiferromagnetic film of the present invention.
- the exchange coupling film 2 formed on the substrate 1 has a laminated antiferromagnetic film 3 and a ferromagnetic film 4.
- the antiferromagnetic film 3 and the ferromagnetic film 4 may be formed by laminating at least a part of them so that exchange coupling occurs between them.
- Another layer can be interposed between the antiferromagnetic film body 3 and the ferromagnetic film 4 under the condition that exchange coupling occurs.
- the order of lamination of the antiferromagnetic film 3 and the ferromagnetic film 4 is set according to the application, and the antiferromagnetic film 3 may be arranged on the upper side. It is also possible to configure the exchange-coupling film with a laminated film in which the antiferromagnetic film 3 and the ferromagnetic film 4 are multi-layered.
- the thickness of the antiferromagnetic film 3 made of RMn alloy (or RMnA alloy) is not particularly limited as long as it is within a range in which antiferromagnetism is exhibited. In order to obtain a large exchange coupling force, it is desirable that the thickness of the antiferromagnetic film 3 be larger than the thickness of the ferromagnetic film 4.
- the thickness is preferably about 3 to 15 ⁇ from the viewpoint of the stability of the exchange coupling force after the heat treatment, and more preferably lOmn or less. is there.
- the thickness of the ferromagnetic film 4 is preferably set to about 1 to 3 nm from the same viewpoint.
- the thickness is preferably about 3 to 50 nm.
- the ferromagnetic film 4 includes various types of single-layered ferromagnetic layers made of Fe, Co, Ni, and alloys thereof, and a magnetic multilayer film exhibiting ferromagnetic properties. And the like. Specifically, an anisotropic magnetoresistive film
- AMR film giant magnetoresistive film
- GMR film giant magnetoresistive film
- spin valve film an artificial lattice film
- dura-niura film a dura-niura film.
- C0 or the C0 alloy is laminated with an antiferromagnetic film 3 made of an RMn alloy, whereby an exchange coupling film 2 having a very high blocking temperature can be obtained. Is preferably used.
- the exchange coupling film 2 of the above-described embodiment is effective for removing Barkhausen noise of a ferromagnetic film in a magnetoresistive effect element (MR element), or fixing magnetization of a ferromagnetic film in an artificial lattice film or a spin valve film. It is used for However, the application of the antiferromagnetic film and the exchange coupling film 2 using the same is not limited to the MR element, and for example, the magnetic anisotropy control of various magnetic paths such as a magnetic yoke made of a ferromagnetic film. It can be used for various purposes.
- MR element magnetoresistive effect element
- the MR element is a reproducing element of a magnetic head for a magnetic recording device such as an HDD. Although it is effective as a sensor for detecting a field, it can also be used for a magnetic storage device such as a magnetoresistive random access memoty (MRAM).
- MRAM magnetoresistive random access memoty
- FIG. 2 shows a configuration example of an AMR element 5 using the exchange coupling film according to the present invention for removing Barkhausen noise of an anisotropic magnetoresistance effect film (AMR film).
- the AMR element 5 has, as a ferromagnetic film, an AMR film 6 made of a ferromagnetic material such as Ni 8Q Fe whose electric resistance changes depending on the direction of the current and the angle formed by the magnetization moment of the magnetic film. ing.
- the antiferromagnetic films 3 are respectively formed by lamination.
- the AMR film 6 and the antiferromagnetic film 3 constitute an exchange coupling film, and the AMR film 6 is provided with a magnetic bias from the antiferromagnetic film 3.
- a current (sense current) is supplied to the AMR film 6 by the pair of electrodes 7.
- An AMR element 5 is composed of the AMR film 6, the antiferromagnetic film 3, and the pair of electrodes 7.
- the electrode 7 may be configured to directly contact the AMR film 6. Further, each of these components are formed, for example, A 1 2 0 3 ⁇ T i C made of the main surface of the substrate 1.
- the magnetic domain is controlled by applying a magnetic bias to the AMR film 6 by utilizing the exchange coupling between the AMR film 6 and the antiferromagnetic film 3.
- Magnetic domain control suppresses Barkhausen noise.
- the application of a magnetic bias to the AMR film 6 by the antiferromagnetic film 3 is performed by laminating the antiferromagnetic film 3 on the AMR film 6 via the exchange bias magnetic field adjusting film 8. Even when the AMR film 6 and the antiferromagnetic film 3 are exchange-coupled through the exchange bias magnetic field adjustment film 8, Good.
- the pair of electrodes 7 is formed so as to be partially laminated on both ends of the antiferromagnetic film 3.
- the antiferromagnetic film of the present invention When the antiferromagnetic film of the present invention is used to apply a magnetic bias to the AMR film 6 in the AMR element 5, as described above, the basic characteristics of the antiferromagnetic film 3 made of an RMn alloy or the like are used. Can be sufficiently and stably exhibited, and a sufficient exchange coupling force can be stably obtained at room temperature and high temperature. Therefore, it is possible to suppress the occurrence of bulkhausen noise with good reproducibility under various conditions.
- FIG. 4 shows a configuration example of a GMR element 9 in which the antiferromagnetic film of the present invention is applied to fix the magnetization of a ferromagnetic layer of a giant magnetoresistive film (GMR film).
- the GMR element 9 has, as a ferromagnetic film, a ferromagnetic layer, a non-magnetic layer, a magnetic multilayer film having a sandwich structure of ferromagnetic layers, and an electric resistance depending on the angle of magnetization between these ferromagnetic layers. It has a variable spin valve film or a multilayer laminated film of a ferromagnetic layer and a nonmagnetic layer, and has a GMR film 10 made of an artificial lattice film or the like exhibiting GMR.
- the GMR element 9 shown in FIG. 4 has a GMR film (spin valve GMR film) 10 composed of a spin valve film.
- the spin valve GMR film 10 has a sandwich film of a ferromagnetic layer 11 1 non-magnetic layer 12 2 ferromagnetic layer 13, and an antiferromagnetic film 3 is formed on the upper ferromagnetic layer 13. They are laminated.
- the ferromagnetic layer 13 and the antiferromagnetic film 3 form an exchange coupling film.
- the upper ferromagnetic layer 13 is a so-called pinned layer whose magnetization is fixed by the exchange coupling force with the antiferromagnetic film 3.
- the lower ferromagnetic layer 11 is a so-called free layer whose magnetization direction is changed by a signal magnetic field (external magnetic field) from a magnetic recording medium or the like.
- the positions of the pinned layer and the free layer in the spin valve GMR film 10 may be upside down.
- the ferromagnetic layer 11 may be a magnetic underlayer (or a nonmagnetic underlayer) as necessary.
- the magnetic underlayer 14 may be composed of one type of magnetic film, or may be a laminated film of different types of magnetic films.
- an amorphous amorphous magnetic material or a soft magnetic material having a face-centered cubic structure, such as a NiFe alloy, a NiFeCo alloy, and various additional elements are used as the magnetic underlayer 14.
- an amorphous amorphous magnetic material or a soft magnetic material having a face-centered cubic structure such as a NiFe alloy, a NiFeCo alloy, and various additional elements are used.
- the added magnetic alloy or the like is used.
- reference numeral 15 denotes a protective film made of Ta or the like, which is formed as necessary.
- a pair of electrodes 7 made of Cu, Ag, Au, A1, an alloy thereof or the like is formed on both ends of the spin valve GMR film 10.
- the pair of electrodes 7 forms the spin valve GMR film.
- Current is supplied to 10 (sense current).
- the GMR element 9 is composed of the spin valve GMR film 10 and the pair of electrodes 7.
- the electrode 7 may be formed below the spin valve GMR film 10.
- the antiferromagnetic film of the present invention when used to fix the magnetization of one ferromagnetic layer, as described above, the basics of the antiferromagnetic film 3 made of RMn alloy or the like are used. Since the characteristics can be exhibited sufficiently and stably, and sufficient exchange coupling force can be obtained stably at room temperature and high temperature, the magnetization fixed state of the pin layer becomes stable and strong, and therefore, good GMR characteristics can be obtained. It can be obtained stably.
- a lower magnetic shield layer 23 made of a soft magnetic material is formed via an insulating layer 22 made of O 3 or the like.
- the lower reproducing magnetic gear-up 2 4 made of non-magnetic insulating film such as A i 2 0 Q, for example, G MR element 9 shown in FIG. 4 is formed ing.
- reference numeral 25 denotes a hard magnetic film (hard bias film) made of a C0Pt alloy for applying a bias magnetic field to the spin valve GMR film 10.
- the bias film can be made of an antiferromagnetic film.
- the pair of electrodes 7 is formed on the hard magnetic film 25, and the spin valve GMR film 10 and the pair of electrodes 7 are electrically connected via the hard magnetic film 25.
- the hard magnetic film 35 for applying a bias magnetic field to the spin valve GMR film 10 may be formed in advance on the lower reproducing magnetic gap 24 as shown in FIG. In this case, the spin valve GMR film 10 is formed on the lower reproducing magnetic gap 24 including the pair of hard magnetic films 25, and the pair of electrodes 7 is formed thereon.
- a recording head consisting of the inductive thin film magnetic head 29 is formed on the reproducing head consisting of the shield type GMR head 28, a recording head consisting of the inductive thin film magnetic head 29 is formed.
- the upper magnetic shield layer 27 of the shield type GMR head 28 also serves as the lower recording pole of the inductive thin film magnetic head 29.
- On the lower Symbol recording magnetic pole 2 7 serving also as the upper magnetic shield layer A l 2 0 3 via the recording magnetic formic cap 3 0 made of a nonmagnetic insulating film such as an upper recording magnetic pole 3 patterned into a predetermined shape 1 is formed.
- the read / write head consisting of the shield type GMR head 28 and the recording head consisting of the inductive thin film magnetic head 29 constitutes a recording / reproducing integrated magnetic head 32.
- the upper recording magnetic pole 3 1, a trench formed in the insulating layer made of a recording magnetic formic cap on S i 0 2 formed may be made by forming buried within the trench, thereby narrowing Tracks can be realized with good reproducibility.
- the recording / reproduction-integrated magnetic head 32 is manufactured by, for example, forming a shape or dividing using a semiconductor process.
- the large exchange coupling force of the exchange coupling film between the antiferromagnetic film made of RMn alloy and the ferromagnetic film is provided. And the high blocking temperature can be fully utilized.
- a recording / reproducing integrated magnetic head can be similarly configured.
- Ir powder, Pt powder, Rh powder, Ni powder, Pd powder, Ru powder, and Au powder having an average particle diameter of 20 m were prepared as raw material powders of the R element.
- Mn powder having an average particle size of was prepared as a raw material powder of Mn.
- Each of these raw material powders was blended at the blending ratio (raw material composition) shown in Table 1, and then mixed using a Nippon ball mill to prevent contamination by metal impurities. Mixing was carried out under reduced pressure for 48 hours.
- Each of these mixed powders was sintered by a vacuum hot press at a pressure of 25 MPa. Hot pressing was performed at 1150 ° C, just below the melting point of Mn.
- each target material obtained was examined by surface analysis using XRD and EPMA. As a result, it was confirmed that each of the materials had an alloy phase and a compound phase of the R element and Mn.
- Table 1 shows the main alloy phases and main compound phases of each target material.
- the particle size of Mn existing as a single phase was examined by SEM. The Mn particle size was 30 ⁇ at maximum for all target materials, and 20 / m on average.
- each of the above-mentioned target materials is processed into a target shape, and Were bonded to the backing plate by soldering to produce respective sputtering targets.
- Each of these sputtering targets was set in a high-frequency magnetron sputtering apparatus, and an antiferromagnetic film was formed in a magnetic field without ripening the substrate.
- the antiferromagnetic film was formed so as to form an exchange coupling film. Specifically, on a Si (100) substrate coated with a thermal oxide film, a 5 nm thick Ta underlayer film, a 5 nm thick C0-based ferromagnetic film, and a 15 nm thick A magnetic film was formed sequentially. In this way, each exchange coupling film was produced.
- Example 2 As another example (Example 2) of the present invention, a sputtering target having the same composition was produced by the same process except that Mn powder having an average particle size of 150 m was used. The same evaluation as in Example 1 was performed for each of the sputtering targets obtained in Example 2. The results are shown in Table 1 (Example 2).
- composition variation of each antiferromagnetic film according to Example 1 with the elapse of the sputtering time was examined.
- the composition fluctuation was investigated by measuring the composition of the antiferromagnetic film at the initial stage of the sputtering (after 1 hour) and the antiferromagnetic film formed after performing the sputtering for 20 hours by X-ray fluorescence analysis. The results are shown in Table 2.
- an antiferromagnetic material film formed by using the sputtering target of Sample 1 of Example 1 and an antiferromagnetic film formed by using the sputtering target of Comparative Example 1 were formed.
- a ferromagnetic film IrMn alloy film
- the measurement points were four points (points B, C, D and E) 3 cm away from the center point (point A) and the outer periphery of the Si substrate. Table 3 shows the measurement results.
- the antiferromagnetic film formed by using the sputtering target of the present invention has a small compositional deviation with the elapse of sputtering time and a uniform composition distribution in the substrate surface. You can see that it is also excellent.
- IrMn targets, RhMn targets, and PtMn targets of various compositions were produced in the same manner as in Example 1.
- Exchange coupling films were prepared in the same manner as in Example 1 using the IrMn target, RhMn target, and PtMn target of these various compositions.
- the exchange coupling force of each of these exchange coupling membranes was measured, and the composition dependence of the exchange coupling force was examined.
- Figure 7 shows the results.
- the exchange-coupling film having the antiferromagnetic film formed by using the sputtering target of the present invention has a sufficient exchange-coupling force in a wide composition range. .
- Example 4 By the same process as in Example 1 except that Mn powder having the average particle size described in Table 4 was used, sputtering targets having different Mn particle sizes shown in Table 4 were produced.
- the composition of a film formed using a sputtering ring target with a large maximum and average particle size of Mn particles has large variations within the substrate surface, and is not suitable for mass production. It can be understood that there is a problem.
- a film formed by using a sputtering target having a small maximum particle size and average particle size of Mn particles has no problem in terms of compositional variation within the substrate surface, but the exchange bias force tends to decrease. is there.
- Each sputtering target shown in Table 5 was produced by applying the same sintering method as in Example 1 and a separate melting method. The workability and gas component concentration (oxygen and carbon content) of each of these sputtering targets were examined. Further, an exchange coupling membrane was prepared in the same manner as in Example 1, and the exchange bias force and the blocking temperature of each exchange coupling membrane were measured. Table 5 shows the results. The constituent phases in each sputtering target according to the third embodiment were the same as those in the first embodiment.
- Comparative Example 2 a sputtering target was produced by the same sintering method as in the above-mentioned Example, except that a raw material powder having a relatively large amount of carbon impurities was used and mixing was performed in the air. .
- the amount of carbon impurities was used as Comparative Example 2 with the present invention.
- the exchange coupling film of the antiferromagnetic film and the ferromagnetic film formed by using the same sputtering target as that of the first embodiment is shown in FIGS. 4 and 6.
- a GMR element having a spin valve film and a magnetic head using the same were fabricated.
- the magnetic underlayer 14 is made of Co 8 having a thickness of 10 nm.
- Z r N b 7 film and the thickness of 2 nm of the N i 8Q F e 2 () laminated film with, C u film having a thickness of 0.1 zm to the electrode 7, T a thickness of 20nm on the protective film 1 5 A membrane was used.
- a Co 83 Pt ⁇ film having a thickness of 40 nm was used as the hard magnetic film 25.
- the ferromagnetic layers 11 and 13, the nonmagnetic layer 12 and the antiferromagnetic film 3 are formed in a magnetic field, and then heat-treated in a magnetic field to form the ferromagnetic layer 13 and the antiferromagnetic material.
- Unidirectional anisotropy was imparted to the exchange coupling with the membrane 3.
- the magnetic underlayer 14 is also heat-treated after being formed in a magnetic field to impart uniaxial magnetic anisotropy, and the hard magnetic film 25 is magnetized to further enhance the uniaxial magnetic anisotropy.
- device processing was performed according to the usual semiconductor process to produce a GMR element and a magnetic head using the same.
- the stability was equal to or higher than that of the GMR element using the ⁇ ⁇ -F e ⁇ alloy for the antiferromagnetic film. Output was obtained. No Barkhausen noise was generated due to domain wall movement.
- the antiferromagnetic film has better corrosion resistance than the GMR device using a 7-FeMn alloy for the antiferromagnetic material film, and has a higher blocking temperature of the exchange coupling film and an exchange coupling force. As a result, a high-sensitivity GMR element with stable output can be obtained with good yield.
- magnetic heads having such GMR elements are particularly resistant to According to the head using an Ir Mn-based antiferromagnetic material film with high corrosion, 0.1 l ⁇ m depth, which cannot be processed by Fe Mn due to corrosion, is possible, and large regeneration is possible. Output could be obtained.
- FIGS. 9 and 10 show the measurement results of the exchange bias magnetic field and the blocking temperature of each sample. As is clear from FIGS. 9 and 10, the exchange bias magnetic field and the blocking temperature are improved. Industrial applicability
- the sputtering target of the present invention it is possible to stabilize the film composition and film quality of an antiferromagnetic film made of a Mn alloy having excellent corrosion resistance and thermal characteristics. Therefore, an antiferromagnetic material film with sufficient exchange coupling force stably obtained Can be provided with good reproducibility.
- Such an antiferromagnetic film of the present invention is effectively used for a magnetoresistive element or the like. Moreover, according to the magnetoresistance effect element using the antiferromagnetic film of the present invention, stable characteristics and output can be obtained with good reproducibility.
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Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
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JP52347798A JP3387934B2 (ja) | 1996-11-20 | 1997-11-20 | スパッタリングターゲット |
US09/101,455 US6165607A (en) | 1996-11-20 | 1997-11-20 | Sputtering target and antiferromagnetic film and magneto-resistance effect element formed by using the same |
DE69738612T DE69738612T2 (de) | 1996-11-20 | 1997-11-20 | Sputtertarget |
EP97912523A EP0897022B1 (en) | 1996-11-20 | 1997-11-20 | Sputtering target |
KR1019980705552A KR100315556B1 (ko) | 1996-11-20 | 1997-11-20 | 스퍼터링타겟,그를이용하여형성한반강자성체막및자기저항효과소자 |
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JP30881696 | 1996-11-20 | ||
JP8/308816 | 1996-11-20 |
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WO1998022636A1 true WO1998022636A1 (fr) | 1998-05-28 |
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PCT/JP1997/004232 WO1998022636A1 (fr) | 1996-11-20 | 1997-11-20 | Cible pour pulverisation, et film antiferromagnetique et element a effet magnetoresistant formes a l'aide de ladite cible |
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US (1) | US6165607A (ja) |
EP (2) | EP0897022B1 (ja) |
JP (2) | JP3387934B2 (ja) |
KR (1) | KR100315556B1 (ja) |
CN (2) | CN100336934C (ja) |
DE (1) | DE69738612T2 (ja) |
SG (1) | SG88758A1 (ja) |
TW (1) | TW479075B (ja) |
WO (1) | WO1998022636A1 (ja) |
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US20060012926A1 (en) * | 2004-07-15 | 2006-01-19 | Parkin Stuart S P | Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance |
US7321734B2 (en) * | 2004-07-29 | 2008-01-22 | Nortel Networks Limited | Digital synthesis of readily compensated optical signals |
US7300711B2 (en) * | 2004-10-29 | 2007-11-27 | International Business Machines Corporation | Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials |
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US9406365B1 (en) * | 2015-01-26 | 2016-08-02 | International Business Machines Corporation | Underlayers for textured films of Heusler compounds |
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CN107012411A (zh) * | 2017-03-08 | 2017-08-04 | 宁波高新区远创科技有限公司 | 一种土壤接地网用合金材料的制备方法 |
US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6321298A (ja) * | 1986-07-10 | 1988-01-28 | Murata Mfg Co Ltd | 酸化亜鉛圧電結晶薄膜の製造方法 |
JPH03271359A (ja) * | 1990-03-20 | 1991-12-03 | Japan Steel Works Ltd:The | 複合酸化物の合成方法 |
Family Cites Families (13)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4103315A (en) * | 1977-06-24 | 1978-07-25 | International Business Machines Corporation | Antiferromagnetic-ferromagnetic exchange bias films |
JPH06104870B2 (ja) * | 1981-08-11 | 1994-12-21 | 株式会社日立製作所 | 非晶質薄膜の製造方法 |
JPS6115941A (ja) * | 1984-06-30 | 1986-01-24 | Res Dev Corp Of Japan | 酸素を含む強磁性非晶質合金およびその製造法 |
JPS61288065A (ja) * | 1985-06-14 | 1986-12-18 | Hitachi Metals Ltd | タ−ゲツト |
DE3707522A1 (de) * | 1986-03-12 | 1987-09-24 | Matsushita Electric Ind Co Ltd | Magnetischer nitridfilm |
JP2529274B2 (ja) * | 1987-07-10 | 1996-08-28 | 松下電器産業株式会社 | 窒化合金膜の熱処理方法 |
JPH01118238A (ja) * | 1987-10-30 | 1989-05-10 | Mitsubishi Kasei Corp | 光磁気記録媒体の製造方法 |
JPH02109309A (ja) * | 1988-10-18 | 1990-04-23 | Tokin Corp | N,f含有磁性膜及びその製造方法 |
US5014147A (en) * | 1989-10-31 | 1991-05-07 | International Business Machines Corporation | Magnetoresistive sensor with improved antiferromagnetic film |
JPH04214831A (ja) * | 1990-09-27 | 1992-08-05 | Sony Corp | 軟磁性膜 |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5315468A (en) * | 1992-07-28 | 1994-05-24 | International Business Machines Corporation | Magnetoresistive sensor having antiferromagnetic layer for exchange bias |
JPH08227813A (ja) * | 1994-12-05 | 1996-09-03 | Sony Corp | 軟磁性薄膜及びこれを用いた薄膜磁気ヘッド |
-
1997
- 1997-11-20 SG SG9904762A patent/SG88758A1/en unknown
- 1997-11-20 EP EP97912523A patent/EP0897022B1/en not_active Expired - Lifetime
- 1997-11-20 EP EP07002323A patent/EP1780301A3/en not_active Withdrawn
- 1997-11-20 TW TW086117526A patent/TW479075B/zh active
- 1997-11-20 US US09/101,455 patent/US6165607A/en not_active Expired - Lifetime
- 1997-11-20 DE DE69738612T patent/DE69738612T2/de not_active Expired - Lifetime
- 1997-11-20 JP JP52347798A patent/JP3387934B2/ja not_active Expired - Lifetime
- 1997-11-20 CN CNB200410071615XA patent/CN100336934C/zh not_active Expired - Lifetime
- 1997-11-20 WO PCT/JP1997/004232 patent/WO1998022636A1/ja active IP Right Grant
- 1997-11-20 CN CNB971917736A patent/CN1194116C/zh not_active Expired - Lifetime
- 1997-11-20 KR KR1019980705552A patent/KR100315556B1/ko not_active IP Right Cessation
-
1999
- 1999-05-31 JP JP15285999A patent/JP3386747B2/ja not_active Expired - Lifetime
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS6321298A (ja) * | 1986-07-10 | 1988-01-28 | Murata Mfg Co Ltd | 酸化亜鉛圧電結晶薄膜の製造方法 |
JPH03271359A (ja) * | 1990-03-20 | 1991-12-03 | Japan Steel Works Ltd:The | 複合酸化物の合成方法 |
Non-Patent Citations (1)
Title |
---|
See also references of EP0897022A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002038258A (ja) * | 2000-07-21 | 2002-02-06 | Toshiba Corp | スパッタリングターゲット |
JP2006283054A (ja) * | 2005-03-31 | 2006-10-19 | Hoya Corp | スパッタリングターゲット、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
JP2011068992A (ja) * | 2010-09-29 | 2011-04-07 | Toshiba Corp | スパッタリングターゲットの製造方法 |
KR20170056003A (ko) | 2014-09-30 | 2017-05-22 | 제이엑스금속주식회사 | 스퍼터링 타깃용 모합금 및 스퍼터링 타깃의 제조 방법 |
CN112601834A (zh) * | 2018-09-19 | 2021-04-02 | 迪睿合株式会社 | Mn-Nb-W-Cu-O系溅射靶及其制备方法 |
Also Published As
Publication number | Publication date |
---|---|
CN1209847A (zh) | 1999-03-03 |
EP0897022A1 (en) | 1999-02-17 |
DE69738612T2 (de) | 2009-07-09 |
JP3386747B2 (ja) | 2003-03-17 |
CN100336934C (zh) | 2007-09-12 |
KR19990077377A (ko) | 1999-10-25 |
KR100315556B1 (ko) | 2002-01-12 |
JP2000160332A (ja) | 2000-06-13 |
US6165607A (en) | 2000-12-26 |
CN1194116C (zh) | 2005-03-23 |
EP1780301A3 (en) | 2007-09-05 |
EP0897022B1 (en) | 2008-04-02 |
SG88758A1 (en) | 2002-05-21 |
CN1590580A (zh) | 2005-03-09 |
TW479075B (en) | 2002-03-11 |
DE69738612D1 (de) | 2008-05-15 |
EP0897022A4 (en) | 2001-05-02 |
EP1780301A2 (en) | 2007-05-02 |
JP3387934B2 (ja) | 2003-03-17 |
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