CN1209847A - 溅射靶,用其制成的抗铁磁材料膜和磁阻效应器件 - Google Patents
溅射靶,用其制成的抗铁磁材料膜和磁阻效应器件 Download PDFInfo
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- CN1209847A CN1209847A CN97191773A CN97191773A CN1209847A CN 1209847 A CN1209847 A CN 1209847A CN 97191773 A CN97191773 A CN 97191773A CN 97191773 A CN97191773 A CN 97191773A CN 1209847 A CN1209847 A CN 1209847A
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- C23C14/34—Sputtering
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
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- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
- G11B5/3929—Disposition of magnetic thin films not used for directly coupling magnetic flux from the track to the MR film or for shielding
- G11B5/3932—Magnetic biasing films
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- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
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- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
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- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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- G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
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Abstract
Description
样品号 | 原材料成分(at%) | 靶成分(at%) | 主要合金相 | 主要化合物相 | 交互偏耦合力 | ||
实施方案1 | 实施方案2 | 比较例1 | |||||
1 | Ir22,Mn78 | Ir22Mn78 | IrMn合金 | IrMn3 | 250 | 180 | 170 |
2 | Pt18,Mn82 | Pt18Mn82 | PtMn合金 | PtMn3 | 190 | 140 | 140 |
3 | Rh20,Mn80 | Rh20Mn80 | RhMn合金 | RhMn3 | 210 | 150 | 140 |
4 | Ir20,Mn80 | Ir20Mn80 | IrMn合金 | IrMn3 | 260 | 180 | 170 |
5 | Ni40,Mn60 | Ni40Mn60 | NiMn合金 | NiMn | 250 | 180 | 180 |
6 | Pd40,Mn60 | Pd40Mn60 | PdMn合金 | PdMn | 180 | 130 | 120 |
7 | Pt20,Pd20,Mn60 | Pt20Pd20Mn60 | PtPdMn合金 | (Pt,Pd)Mn化合物 | 250 | 220 | 210 |
8 | Pt20,Ru20,Mn60 | Pt20Ru20Mn60 | PtRuMn合金 | (Pt,Ru)Mn化合物 | 230 | 200 | 180 |
9 | Pd20,Ru20,Mn60 | Pd20Ru20Mn60 | PdRuMn合金 | (Pd,Ru)Mn化合物 | 200 | 170 | 160 |
10 | Au10,Pt10,Mn80 | Au10Pt10Mn80 | AuPtMn合金 | (Au,Pt)Mn化合物 | 180 | 160 | 160 |
11 | Rh10,Ru10,Mn80 | Rh10Ru10Mn80 | RhRuMn合金 | (Rh,Ru)Mn化合物 | 240 | 210 | 200 |
12 | Rh10,Pt10,Mn80 | Rh10Pt10Mn80 | RhPtMn合金 | (Rh,Pt)Mn化合物 | 240 | 200 | 210 |
样品号 | 靶成分(at.%) | 膜成分偏差(at.%) | ||
1小时后 | 20小时后 | |||
实施方案1 | 1 | Ir22Mn78 | Ir22Mn78 | Ir21.8Mn78.2 |
2 | Pt18Mn82 | Pt18Mn82 | Pt18.3Mn81.7 | |
3 | Rh20Mn80 | Rh20Mn80 | Rh19.5Mn80.5 | |
4 | Ir20Mn80 | Ir20Mn80 | Ir20.3Mn79.7 | |
5 | Ni40Mn60 | Ni50Mn50 | Ni49.5Mn50.5 | |
6 | Pd40Mn60 | Pd50Mn50 | Pd49.5Mn50.5 | |
实施方案2 | 1 | Ir22Mn78 | Ir25Mn75 | Ir30Mn70 |
比较例1 | 1 | Ir22Mn78 | Ir21Mn79 | Ir27Mn73 |
靶成分(at.%) | 基片中各点的Ir含量(at.%) | |||||
A点 | B点 | C点 | D点 | E点 | ||
实施方案1 | Ir22Mn78 | 22.0 | 21.8 | 21.7 | 21.6 | 21.5 |
比较例1 | Ir22Mn78 | 25.0 | 23.8 | 23.5 | 24.1 | 23.4 |
样品号 | 靶成分(at.%) | Mn粉原材料平均粒径(μm) | 靶中Mn颗粒尺寸(μm) | 基片内各点的Ir含量(at.%) | 交互偏转力(×80A/m) | |||||
平均 | 最大 | A点 | B点 | C点 | D点 | E点 | ||||
1 | Ir22Mn78 | 10 | <10 | <10 | 22.0 | 21.7 | 21.6 | 21.7 | 21.5 | 200 |
2 | Ir22Mn78 | 40 | 20 | 30 | 22.0 | 21.8 | 21.6 | 21.5 | 21.6 | 250 |
3 | Ir22Mn78 | 80 | 30 | 40 | 22.3 | 22.0 | 22.2 | 21.8 | 22.0 | 250 |
4 | Ir22Mn78 | 150 | 80 | 130 | 25.0 | 23.8 | 23.5 | 24.1 | 23.4 | 240 |
靶成分(at.%) | 制备方法 | 气体含量(wt.%) | 交互偏转力(×80A/m) | 临界温度(℃) | ||
氧 | 碳 | |||||
实施方案5 | Ir22Mn78 | 烧结法 | 0.600 | 0.200 | 250 | 290 |
Ir22Mn78 | 熔炼法 | 0.028 | 0.005 | 250 | 280 | |
Pt18Mn82 | 烧结法 | 0.580 | 0.160 | 180 | 390 | |
Pt18Mn82 | 熔炼法 | 0.025 | 0.005 | 180 | 400 | |
比较例2 | Ir22Mn78 | 烧结法 | 3.120 | 1.010 | 180 | 210 |
Ir22Mn78 | 熔炼法 | 1.580 | 0.980 | 180 | 200 | |
Pt18Mn82 | 烧结法 | 2.140 | 1.220 | 130 | 350 | |
Pt18Mn82 | 熔炼法 | 1.760 | 0.790 | 130 | 360 |
Claims (13)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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JP308816/1996 | 1996-11-20 | ||
JP30881696 | 1996-11-20 |
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CNB200410071615XA Division CN100336934C (zh) | 1996-11-20 | 1997-11-20 | 抗铁磁材料膜和包括其的磁阻效应器件 |
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CN1209847A true CN1209847A (zh) | 1999-03-03 |
CN1194116C CN1194116C (zh) | 2005-03-23 |
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Application Number | Title | Priority Date | Filing Date |
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CNB200410071615XA Expired - Lifetime CN100336934C (zh) | 1996-11-20 | 1997-11-20 | 抗铁磁材料膜和包括其的磁阻效应器件 |
CNB971917736A Expired - Lifetime CN1194116C (zh) | 1996-11-20 | 1997-11-20 | 溅射靶,用其制成的抗铁磁材料膜和磁阻效应器件 |
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CNB200410071615XA Expired - Lifetime CN100336934C (zh) | 1996-11-20 | 1997-11-20 | 抗铁磁材料膜和包括其的磁阻效应器件 |
Country Status (9)
Country | Link |
---|---|
US (1) | US6165607A (zh) |
EP (2) | EP0897022B1 (zh) |
JP (2) | JP3387934B2 (zh) |
KR (1) | KR100315556B1 (zh) |
CN (2) | CN100336934C (zh) |
DE (1) | DE69738612T2 (zh) |
SG (1) | SG88758A1 (zh) |
TW (1) | TW479075B (zh) |
WO (1) | WO1998022636A1 (zh) |
Cited By (4)
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CN100340693C (zh) * | 2002-05-30 | 2007-10-03 | 住友金属矿山株式会社 | 透明导电薄膜用靶、透明导电薄膜及其制造方法、显示器用电极材料及有机电致发光元件 |
CN102877033A (zh) * | 2011-07-14 | 2013-01-16 | 北京有色金属研究总院 | 一种锰合金靶材及其制造方法 |
CN107012411A (zh) * | 2017-03-08 | 2017-08-04 | 宁波高新区远创科技有限公司 | 一种土壤接地网用合金材料的制备方法 |
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US6645614B1 (en) | 2000-07-25 | 2003-11-11 | Seagate Technology Llc | Magnetic recording media having enhanced coupling between magnetic layers |
US6753072B1 (en) | 2000-09-05 | 2004-06-22 | Seagate Technology Llc | Multilayer-based magnetic media with hard ferromagnetic, anti-ferromagnetic, and soft ferromagnetic layers |
US20020044391A1 (en) | 2000-11-15 | 2002-04-18 | Masayoshi Hiramoto | Magneto-resistive element magnetic head, and magnetic recording and reproduction apparatus |
JP4608090B2 (ja) * | 2000-12-27 | 2011-01-05 | 三井金属鉱業株式会社 | 低酸素スパッタリングターゲット |
US6358756B1 (en) * | 2001-02-07 | 2002-03-19 | Micron Technology, Inc. | Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment scheme |
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US6724027B2 (en) * | 2002-04-18 | 2004-04-20 | Hewlett-Packard Development Company, L.P. | Magnetic shielding for MRAM devices |
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US20050061857A1 (en) * | 2003-09-24 | 2005-03-24 | Hunt Thomas J. | Method for bonding a sputter target to a backing plate and the assembly thereof |
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JP2005232509A (ja) * | 2004-02-18 | 2005-09-02 | Mitsui Mining & Smelting Co Ltd | Mn合金スパッタリングターゲットの製造方法及びその製法によるMn合金スパッタリングターゲット |
US7256971B2 (en) * | 2004-03-09 | 2007-08-14 | Headway Technologies, Inc. | Process and structure to fabricate CPP spin valve heads for ultra-high recording density |
US7270896B2 (en) * | 2004-07-02 | 2007-09-18 | International Business Machines Corporation | High performance magnetic tunnel barriers with amorphous materials |
US7357995B2 (en) * | 2004-07-02 | 2008-04-15 | International Business Machines Corporation | Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance |
US20060012926A1 (en) * | 2004-07-15 | 2006-01-19 | Parkin Stuart S P | Magnetic tunnel barriers and associated magnetic tunnel junctions with high tunneling magnetoresistance |
US7321734B2 (en) * | 2004-07-29 | 2008-01-22 | Nortel Networks Limited | Digital synthesis of readily compensated optical signals |
US7300711B2 (en) * | 2004-10-29 | 2007-11-27 | International Business Machines Corporation | Magnetic tunnel junctions with high tunneling magnetoresistance using non-bcc magnetic materials |
US7351483B2 (en) * | 2004-11-10 | 2008-04-01 | International Business Machines Corporation | Magnetic tunnel junctions using amorphous materials as reference and free layers |
JP2006283054A (ja) * | 2005-03-31 | 2006-10-19 | Hoya Corp | スパッタリングターゲット、多層反射膜付き基板の製造方法、及び反射型マスクブランクの製造方法、並びに反射型マスクの製造方法 |
JP5234735B2 (ja) * | 2005-06-16 | 2013-07-10 | Jx日鉱日石金属株式会社 | タンタル−ルテニウム合金スパッタリングターゲット |
US20080131735A1 (en) * | 2006-12-05 | 2008-06-05 | Heraeus Incorporated | Ni-X, Ni-Y, and Ni-X-Y alloys with or without oxides as sputter targets for perpendicular magnetic recording |
US9279178B2 (en) * | 2007-04-27 | 2016-03-08 | Honeywell International Inc. | Manufacturing design and processing methods and apparatus for sputtering targets |
JP5808094B2 (ja) * | 2010-09-29 | 2015-11-10 | 株式会社東芝 | スパッタリングターゲットの製造方法 |
WO2012077665A1 (ja) * | 2010-12-09 | 2012-06-14 | Jx日鉱日石金属株式会社 | 強磁性材スパッタリングターゲット |
JP5768029B2 (ja) * | 2012-10-05 | 2015-08-26 | 田中貴金属工業株式会社 | マグネトロンスパッタリング用ターゲットおよびその製造方法 |
JP6376438B2 (ja) * | 2013-05-31 | 2018-08-22 | 日立金属株式会社 | Cu−Mn合金スパッタリングターゲット材およびその製造方法 |
US10704137B2 (en) | 2014-09-30 | 2020-07-07 | Jx Nippon Mining & Metals Corporation | Master alloy for sputtering target and method for producing sputtering target |
CN105695946A (zh) * | 2014-11-28 | 2016-06-22 | 宁波江丰电子材料股份有限公司 | 透光基板的镀膜方法 |
US9958511B2 (en) * | 2014-12-08 | 2018-05-01 | Infineon Technologies Ag | Soft switching of magnetization in a magnetoresistive sensor |
KR101705962B1 (ko) | 2015-01-19 | 2017-02-14 | 한양대학교 산학협력단 | 수직자기이방성을 갖는 mtj 구조 및 이를 포함하는 자성소자 |
US9406365B1 (en) * | 2015-01-26 | 2016-08-02 | International Business Machines Corporation | Underlayers for textured films of Heusler compounds |
US10760156B2 (en) | 2017-10-13 | 2020-09-01 | Honeywell International Inc. | Copper manganese sputtering target |
US11035036B2 (en) | 2018-02-01 | 2021-06-15 | Honeywell International Inc. | Method of forming copper alloy sputtering targets with refined shape and microstructure |
JP7061543B2 (ja) * | 2018-09-19 | 2022-04-28 | デクセリアルズ株式会社 | Mn-Nb-W-Cu-O系スパッタリングターゲット及びその製造方法 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4103315A (en) * | 1977-06-24 | 1978-07-25 | International Business Machines Corporation | Antiferromagnetic-ferromagnetic exchange bias films |
JPH06104870B2 (ja) * | 1981-08-11 | 1994-12-21 | 株式会社日立製作所 | 非晶質薄膜の製造方法 |
JPS6115941A (ja) * | 1984-06-30 | 1986-01-24 | Res Dev Corp Of Japan | 酸素を含む強磁性非晶質合金およびその製造法 |
JPS61288065A (ja) * | 1985-06-14 | 1986-12-18 | Hitachi Metals Ltd | タ−ゲツト |
DE3707522A1 (de) * | 1986-03-12 | 1987-09-24 | Matsushita Electric Ind Co Ltd | Magnetischer nitridfilm |
JPH0753636B2 (ja) * | 1986-07-10 | 1995-06-07 | 株式会社村田製作所 | 酸化亜鉛圧電結晶薄膜の製造方法 |
JP2529274B2 (ja) * | 1987-07-10 | 1996-08-28 | 松下電器産業株式会社 | 窒化合金膜の熱処理方法 |
JPH01118238A (ja) * | 1987-10-30 | 1989-05-10 | Mitsubishi Kasei Corp | 光磁気記録媒体の製造方法 |
JPH02109309A (ja) * | 1988-10-18 | 1990-04-23 | Tokin Corp | N,f含有磁性膜及びその製造方法 |
US5014147A (en) * | 1989-10-31 | 1991-05-07 | International Business Machines Corporation | Magnetoresistive sensor with improved antiferromagnetic film |
JPH03271359A (ja) * | 1990-03-20 | 1991-12-03 | Japan Steel Works Ltd:The | 複合酸化物の合成方法 |
JPH04214831A (ja) * | 1990-09-27 | 1992-08-05 | Sony Corp | 軟磁性膜 |
US5206590A (en) * | 1990-12-11 | 1993-04-27 | International Business Machines Corporation | Magnetoresistive sensor based on the spin valve effect |
US5315468A (en) * | 1992-07-28 | 1994-05-24 | International Business Machines Corporation | Magnetoresistive sensor having antiferromagnetic layer for exchange bias |
JPH08227813A (ja) * | 1994-12-05 | 1996-09-03 | Sony Corp | 軟磁性薄膜及びこれを用いた薄膜磁気ヘッド |
-
1997
- 1997-11-20 SG SG9904762A patent/SG88758A1/en unknown
- 1997-11-20 WO PCT/JP1997/004232 patent/WO1998022636A1/ja active IP Right Grant
- 1997-11-20 CN CNB200410071615XA patent/CN100336934C/zh not_active Expired - Lifetime
- 1997-11-20 KR KR1019980705552A patent/KR100315556B1/ko not_active IP Right Cessation
- 1997-11-20 US US09/101,455 patent/US6165607A/en not_active Expired - Lifetime
- 1997-11-20 EP EP97912523A patent/EP0897022B1/en not_active Expired - Lifetime
- 1997-11-20 EP EP07002323A patent/EP1780301A3/en not_active Withdrawn
- 1997-11-20 CN CNB971917736A patent/CN1194116C/zh not_active Expired - Lifetime
- 1997-11-20 JP JP52347798A patent/JP3387934B2/ja not_active Expired - Lifetime
- 1997-11-20 DE DE69738612T patent/DE69738612T2/de not_active Expired - Lifetime
- 1997-11-20 TW TW086117526A patent/TW479075B/zh active
-
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100340693C (zh) * | 2002-05-30 | 2007-10-03 | 住友金属矿山株式会社 | 透明导电薄膜用靶、透明导电薄膜及其制造方法、显示器用电极材料及有机电致发光元件 |
CN102877033A (zh) * | 2011-07-14 | 2013-01-16 | 北京有色金属研究总院 | 一种锰合金靶材及其制造方法 |
CN107735504A (zh) * | 2015-06-29 | 2018-02-23 | 山阳特殊制钢株式会社 | 溅射靶材 |
CN107735504B (zh) * | 2015-06-29 | 2019-11-01 | 山阳特殊制钢株式会社 | 溅射靶材 |
CN107012411A (zh) * | 2017-03-08 | 2017-08-04 | 宁波高新区远创科技有限公司 | 一种土壤接地网用合金材料的制备方法 |
Also Published As
Publication number | Publication date |
---|---|
WO1998022636A1 (fr) | 1998-05-28 |
EP1780301A3 (en) | 2007-09-05 |
DE69738612D1 (de) | 2008-05-15 |
US6165607A (en) | 2000-12-26 |
CN1590580A (zh) | 2005-03-09 |
EP0897022B1 (en) | 2008-04-02 |
DE69738612T2 (de) | 2009-07-09 |
EP1780301A2 (en) | 2007-05-02 |
JP3386747B2 (ja) | 2003-03-17 |
KR100315556B1 (ko) | 2002-01-12 |
JP3387934B2 (ja) | 2003-03-17 |
SG88758A1 (en) | 2002-05-21 |
EP0897022A4 (en) | 2001-05-02 |
EP0897022A1 (en) | 1999-02-17 |
CN100336934C (zh) | 2007-09-12 |
TW479075B (en) | 2002-03-11 |
KR19990077377A (ko) | 1999-10-25 |
CN1194116C (zh) | 2005-03-23 |
JP2000160332A (ja) | 2000-06-13 |
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