CN1590580A - 抗铁磁材料膜和包括其的磁阻效应器件 - Google Patents
抗铁磁材料膜和包括其的磁阻效应器件 Download PDFInfo
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- CN1590580A CN1590580A CNA200410071615XA CN200410071615A CN1590580A CN 1590580 A CN1590580 A CN 1590580A CN A200410071615X A CNA200410071615X A CN A200410071615XA CN 200410071615 A CN200410071615 A CN 200410071615A CN 1590580 A CN1590580 A CN 1590580A
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
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- G11B5/3903—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects using magnetic thin film layers or their effects, the films being part of integrated structures
- G11B5/3906—Details related to the use of magnetic thin film layers or to their effects
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- H01F10/3218—Exchange coupling of magnetic films via an antiferromagnetic interface
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- H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
- H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
- H01F10/3268—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being asymmetric, e.g. by use of additional pinning, by using antiferromagnetic or ferromagnetic coupling interface, i.e. so-called spin-valve [SV] structure, e.g. NiFe/Cu/NiFe/FeMn
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- H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
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- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/18—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates by cathode sputtering
- H01F41/183—Sputtering targets therefor
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- H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
- H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
- H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices
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- G11B5/127—Structure or manufacture of heads, e.g. inductive
- G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
- G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
- G11B2005/3996—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects large or giant magnetoresistive effects [GMR], e.g. as generated in spin-valve [SV] devices
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Abstract
Description
样品号 | 原材料成分(at%) | 靶成分(at%) | 主要合金相 | 主要化合物相 | 交互偏耦合力 | ||
实施方案1 | 实施方案2 | 比较例1 | |||||
1 | Ir22,Mn78 | Ir22Mn78 | IrMn合金 | IrMn3 | 250 | 180 | 170 |
2 | Pt18,Mn82 | Pt18Mn82 | PtMn合金 | PtMn3 | 190 | 140 | 140 |
3 | Rh20,Mn80 | Rh20Mn80 | RhMn合金 | RhMn3 | 210 | 150 | 140 |
4 | Ir20,Mn80 | Ir20Mn80 | IrMn合金 | IrMn3 | 260 | 180 | 170 |
5 | Ni40,Mn60 | Ni40Mn60 | NiMn合金 | NiMn | 250 | 180 | 180 |
6 | Pd40,Mn60 | Pd40Mn60 | PdMn合金 | PdMn | 180 | 130 | 120 |
7 | Pt20,Pd20,Mn60 | Pt20Pd20Mn60 | PtPdMn合金 | (Pt,Pd)Mn化合物 | 250 | 220 | 210 |
8 | Pt20,Ru20,Mn60 | Pt20Ru20Mn60 | PtRuMn合金 | (Pt,Ru)Mn化合物 | 230 | 200 | 180 |
9 | Pd20,Ru20,Mn60 | Pd20Ru20Mn60 | PdRuMn合金 | (Pd,Ru)Mn化合物 | 200 | 170 | 160 |
10 | Au10,Pt10,Mn80 | Au10Pt10Mn80 | AuPtMn合金 | (Au,Pt)Mn化合物 | 180 | 160 | 160 |
11 | Rh10,Ru10,Mn80 | Rh10Ru10Mn80 | RhRuMn合金 | (Rh,Ru)Mn化合物 | 240 | 210 | 200 |
12 | Rh10,Pt10,Mn80 | Rh10Pt10Mn80 | RhPtMn合金 | (Rh,Pt)Mn化合物 | 240 | 200 | 210 |
样品号 | 靶成分(at.%) | 膜成分偏差(at.%) | ||
1小时后 | 20小时后 | |||
实施方案1 | 1 | Ir22Mn78 | Ir22Mn78 | Ir21.8Mn78.2 |
2 | Pt18Mn82 | Pt18Mn82 | Pt18.3Mn81.7 | |
3 | Rh20Mn80 | Rh20Mn80 | Rh19.5Mn80.5 | |
4 | Ir20Mn80 | Ir20Mn80 | Ir20.3Mn79.7 | |
5 | Ni40Mn60 | Ni50Mn50 | Ni49.5Mn50.5 | |
6 | Pd40Mn60 | Pd50Mn50 | Pd49.5Mn50.5 | |
实施方案2 | 1 | Ir22Mn78 | Ir25Mn75 | Ir30Mn70 |
比较例1 | 1 | Ir22Mn78 | Ir21Mn79 | Ir27Mn73 |
靶成分(at.%) | 基片中各点的Ir含量(at.%) | |||||
A点 | B点 | C点 | D点 | E点 | ||
实施方案1 | Ir22Mn78 | 22.0 | 21.8 | 21.7 | 21.6 | 21.5 |
比较例1 | Ir22Mn78 | 25.0 | 23.8 | 23.5 | 24.1 | 23.4 |
样品号 | 靶成分(at%) | Mn粉原材料平均粒径(μm) | 靶中Mn颗粒尺寸(μm) | 基片内各点的Ir含量(at.%) | 交互偏转力(×80A/m) | |||||
平均 | 最大 | A点 | B点 | C点 | D点 | E点 | ||||
1 | Ir22Mn78 | 10 | <10 | <10 | 22.0 | 21.7 | 21.6 | 21.7 | 21.5 | 200 |
2 | Ir22Mn78 | 40 | 20 | 30 | 22.0 | 21.8 | 21.6 | 21.5 | 21.6 | 250 |
3 | Ir22Mn78 | 80 | 30 | 40 | 22.3 | 22.0 | 22.2 | 21.8 | 22.0 | 250 |
4 | Ir22Mn78 | 150 | 80 | 130 | 25.0 | 23.8 | 23.5 | 24.1 | 23.4 | 240 |
靶成分(at.%) | 制备方法 | 气体含量(wt.%) | 交互偏转力(×80A/m) | 临界温度(℃) | ||
氧 | 碳 | |||||
实施方案5 | Ir22Mn78 | 烧结法 | 0.600 | 0.200 | 250 | 290 |
Ir22Mn78 | 熔炼法 | 0.028 | 0.005 | 250 | 280 | |
Pt18Mn82 | 烧结法 | 0.580 | 0.160 | 180 | 390 | |
Pt18Mn82 | 熔炼法 | 0.025 | 0.005 | 180 | 400 | |
比较例2 | Ir22Mn78 | 烧结法 | 3.120 | 1.010 | 180 | 210 |
Ir22Mn78 | 熔炼法 | 1.580 | 0.980 | 180 | 200 | |
Pt18Mn82 | 烧结法 | 2.140 | 1.220 | 130 | 350 | |
Pt18Mn82 | 熔炼法 | 1.760 | 0.790 | 130 | 360 |
Claims (8)
Applications Claiming Priority (2)
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JP308816/1996 | 1996-11-20 | ||
JP30881696 | 1996-11-20 |
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CNB971917736A Expired - Lifetime CN1194116C (zh) | 1996-11-20 | 1997-11-20 | 溅射靶,用其制成的抗铁磁材料膜和磁阻效应器件 |
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Country Status (9)
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US (1) | US6165607A (zh) |
EP (2) | EP0897022B1 (zh) |
JP (2) | JP3387934B2 (zh) |
KR (1) | KR100315556B1 (zh) |
CN (2) | CN100336934C (zh) |
DE (1) | DE69738612T2 (zh) |
SG (1) | SG88758A1 (zh) |
TW (1) | TW479075B (zh) |
WO (1) | WO1998022636A1 (zh) |
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- 1997-11-20 SG SG9904762A patent/SG88758A1/en unknown
- 1997-11-20 WO PCT/JP1997/004232 patent/WO1998022636A1/ja active IP Right Grant
- 1997-11-20 CN CNB200410071615XA patent/CN100336934C/zh not_active Expired - Lifetime
- 1997-11-20 KR KR1019980705552A patent/KR100315556B1/ko not_active IP Right Cessation
- 1997-11-20 US US09/101,455 patent/US6165607A/en not_active Expired - Lifetime
- 1997-11-20 EP EP97912523A patent/EP0897022B1/en not_active Expired - Lifetime
- 1997-11-20 EP EP07002323A patent/EP1780301A3/en not_active Withdrawn
- 1997-11-20 CN CNB971917736A patent/CN1194116C/zh not_active Expired - Lifetime
- 1997-11-20 JP JP52347798A patent/JP3387934B2/ja not_active Expired - Lifetime
- 1997-11-20 DE DE69738612T patent/DE69738612T2/de not_active Expired - Lifetime
- 1997-11-20 TW TW086117526A patent/TW479075B/zh active
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CN105675026A (zh) * | 2014-12-08 | 2016-06-15 | 英飞凌科技股份有限公司 | 在磁阻传感器中磁化的软切换 |
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Also Published As
Publication number | Publication date |
---|---|
WO1998022636A1 (fr) | 1998-05-28 |
EP1780301A3 (en) | 2007-09-05 |
DE69738612D1 (de) | 2008-05-15 |
US6165607A (en) | 2000-12-26 |
EP0897022B1 (en) | 2008-04-02 |
DE69738612T2 (de) | 2009-07-09 |
EP1780301A2 (en) | 2007-05-02 |
JP3386747B2 (ja) | 2003-03-17 |
KR100315556B1 (ko) | 2002-01-12 |
JP3387934B2 (ja) | 2003-03-17 |
SG88758A1 (en) | 2002-05-21 |
EP0897022A4 (en) | 2001-05-02 |
EP0897022A1 (en) | 1999-02-17 |
CN100336934C (zh) | 2007-09-12 |
CN1209847A (zh) | 1999-03-03 |
TW479075B (en) | 2002-03-11 |
KR19990077377A (ko) | 1999-10-25 |
CN1194116C (zh) | 2005-03-23 |
JP2000160332A (ja) | 2000-06-13 |
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