US8698238B2 - Semiconductor devices and methods of forming the same - Google Patents

Semiconductor devices and methods of forming the same Download PDF

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US8698238B2
US8698238B2 US13/706,878 US201213706878A US8698238B2 US 8698238 B2 US8698238 B2 US 8698238B2 US 201213706878 A US201213706878 A US 201213706878A US 8698238 B2 US8698238 B2 US 8698238B2
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region
pattern
substrate
doping
semiconductor device
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US20130146974A1 (en
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Yongdon Kim
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Samsung Electronics Co Ltd
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Samsung Electronics Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/76224—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using trench refilling with dielectric materials
    • H01L21/76229—Concurrent filling of a plurality of trenches having a different trench shape or dimension, e.g. rectangular and V-shaped trenches, wide and narrow trenches, shallow and deep trenches
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    • H—ELECTRICITY
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    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H01L29/0642—Isolation within the component, i.e. internal isolation
    • H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
    • H01L29/0653—Dielectric regions, e.g. SiO2 regions, air gaps adjoining the input or output region of a field-effect device, e.g. the source or drain region
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0843—Source or drain regions of field-effect devices
    • H01L29/0847—Source or drain regions of field-effect devices of field-effect transistors with insulated gate
    • H01L29/0852—Source or drain regions of field-effect devices of field-effect transistors with insulated gate of DMOS transistors
    • H01L29/0873—Drain regions
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/66681—Lateral DMOS transistors, i.e. LDMOS transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
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    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7816—Lateral DMOS transistors, i.e. LDMOS transistors
    • H—ELECTRICITY
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    • H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
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    • H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Definitions

  • Embodiments of the present disclosure herein relate to semiconductor devices and methods of forming the same.
  • carriers such as electrons or holes, travel through a channel between predetermined doping regions.
  • the distance or area of travel of the carriers may affect on-resistance of the semiconductor device.
  • Exemplary embodiments are directed to semiconductor devices and methods of forming the same.
  • a method of forming a semiconductor device includes preparing a substrate having a transistor region and an alignment region, forming a first trench and a second trench in the substrate of the transistor region and in the substrate of the alignment region respectively, forming a drift region in the substrate of the transistor region, forming two third trenches respectively adjacent to two ends of the drift region, and forming an isolation pattern in the first trench, a buried dielectric pattern in the second trench, and dielectric patterns in the two third trenches, respectively.
  • a depth of the first trench is less than a depth of the third trenches, and the depth of the first trench is equal or substantially equal to a depth of the second trench.
  • the first and second trenches may be simultaneously formed using a single patterning process.
  • the second trench may be used as an alignment key in subsequent exposure processes.
  • Forming the drift region may include implanting dopants of a first conductivity type into the substrate surrounding the first trench in the transistor region.
  • the method may further include forming a first well region and a second well region in the drift region.
  • the first well region may be formed between one of the dielectric patterns and the isolation pattern, the first well region may be formed to be spaced apart from the isolation pattern, and the second well region may be formed between the other of the dielectric patterns and the isolation pattern.
  • the first well region may be formed by implanting dopants of a second conductivity type different from the first conductivity type, and the second well region may be formed by implanting dopants of the first conductivity type.
  • Forming the isolation pattern, the buried dielectric pattern and the dielectric patterns may include forming a dielectric layer in the first, second and third trenches and on the substrate, and planarizing the dielectric layer until a top surface of the substrate is exposed.
  • a bottom surface of the first trench may be flat such that a depth of the first trench is uniform throughout the entire bottom surface of the first trench.
  • a semiconductor device includes two dielectric patterns in a substrate, a drift region disposed in the substrate between the two dielectric patterns to have a protrusion protruding toward a bottom surface of the substrate, an isolation pattern in the drift region between the two dielectric patterns, a gate pattern on the substrate, and a source region and a drain region at both sides of the gate pattern.
  • a depth of the two dielectric patterns is greater than a depth of the isolation pattern.
  • An entire bottom surface of the isolation pattern may have a uniform depth.
  • the protrusion of the drift region may overlap the isolation pattern.
  • the substrate may have a transistor region and an alignment region.
  • the semiconductor device may further include a buried dielectric pattern in the substrate of the alignment region.
  • a depth of the buried dielectric pattern may be equal or substantially equal to the depth of the isolation pattern.
  • the semiconductor device may further include a first well region and a second well region disposed in the drift region.
  • the first and second well regions may be spaced apart from each other.
  • the first well region may be disposed between one of the two dielectric patterns and the isolation pattern, and the second well region may be disposed between the other of the dielectric patterns and the isolation pattern.
  • the first well region may be spaced apart from the isolation pattern.
  • the semiconductor device may further include a first doping region and a second doping region in the first well region, and a third doping region in the second well region.
  • the gate pattern may cover the first well region and the drift region disposed between the second doping region and the isolation pattern. When voltage biases are applied to the gate pattern, the first doping region, the second doping region and the third doping region, carriers may be drifted along the drift region between the first and second well regions.
  • a semiconductor device including a substrate, a drift region in the substrate, wherein the drift region includes a protrusion, a first doping pattern,
  • a second doping pattern an isolation pattern between the first and second doping patterns, wherein the isolation pattern is spaced apart from the first doping pattern and contacts the second doping pattern, and a gate pattern on the substrate, wherein the gate pattern overlaps at least a portion of the isolation pattern, wherein the protrusion of the drift region overlaps at least a portion of the isolation pattern.
  • the semiconductor device further includes a dielectric pattern adjacent to at least one of the first doping pattern or the second doping pattern, wherein a depth of the dielectric pattern is larger than a depth of the isolation pattern.
  • a width of the protrusion of the drift region is the same or substantially the same as a width of the isolation pattern or is larger than the width of the isolation pattern.
  • the semiconductor device further includes a well region in the substrate, wherein the well region covers the first doping pattern, and wherein at least a portion of the well region overlaps the gate pattern.
  • FIG. 1 is a cross sectional view illustrating a semiconductor device according to an embodiment.
  • FIG. 2 is a cross sectional view illustrating a semiconductor device according to an embodiment.
  • FIGS. 3 to 8 are cross sectional views illustrating a method of forming a semiconductor device according to an embodiment.
  • the term “and/or” includes any and all combinations of one or more of the associated listed items. It will be understood that when an element is referred to as being “connected” or “coupled” to another element, it may be directly connected or coupled to the other element or intervening elements may be present.
  • FIG. 1 is a cross sectional view illustrating a semiconductor device according to an embodiment.
  • two dielectric patterns 140 c may be disposed in a substrate 100 .
  • the two dielectric patterns 140 c may be spaced apart from each other.
  • each of the dielectric patterns 140 c may include a nitride layer, an oxide layer or an oxynitride layer.
  • the substrate 100 may be a silicon substrate, a germanium substrate or a compound semiconductor substrate. Alternatively, the substrate 100 may include an epitaxial semiconductor layer.
  • a drift region 107 may be disposed in the substrate 100 .
  • the drift region 107 may be disposed between the two dielectric patterns 140 c .
  • the drift region 107 may be a portion of the substrate 100 .
  • the drift region 107 may be doped with dopants of a first conductivity type.
  • the drift region 107 may include a body and a protrusion 107 p protruding from a bottom portion of the body toward a bottom surface of the substrate 100 .
  • An isolation pattern 140 a may be disposed in the drift region 107 .
  • the isolation pattern 140 a may be disposed between the two dielectric patterns 140 c and may be spaced apart from the two dielectric patterns 140 c .
  • the isolation pattern 140 a may include a nitride layer, an oxide layer or an oxynitride layer.
  • the isolation pattern 140 a may include the same material as the dielectric patterns 140 c .
  • the isolation pattern 140 a and the dielectric patterns 140 c may include a silicon oxide layer.
  • the isolation pattern 140 a may be disposed to have a first depth D 1 from a top surface of the substrate 100
  • the dielectric patterns 140 c may be disposed to have a second depth D 2 from a top surface of the substrate 100 .
  • the first depth D 1 may be less than the second depth D 2 .
  • the second depth D 2 may be at least twice the first depth D 1 .
  • the first depth D 1 may be 0.15 ⁇ 0.2 ⁇ m
  • the second depth D 2 may be 0.4 ⁇ 0.6 ⁇ m.
  • an entire bottom surface of the isolation pattern 140 a may be flat.
  • a distance between the top surface and the bottom surface of the isolation pattern 140 a may be uniform throughout the isolation pattern 140 a .
  • a distance between the top surface and the bottom surface of the isolation pattern 140 a may be kept uniform at the first depth D 1 . Accordingly, the bottom surface of the isolation pattern 140 a may be flat without any uneven profile or any step differences.
  • the isolation pattern 140 a may overlap the protrusion 107 p of the drift region 107 .
  • the isolation pattern 140 a may completely overlap the protrusion 107 p of the drift region 107 .
  • the isolation pattern 140 a may have a first width in a first direction, and the protrusion 107 p of the drift region 107 may have a second width in the first direction.
  • the first direction may be a direction from one of the two dielectric patterns 140 c toward the other of the two dielectric patterns 140 c .
  • the second width may be substantially equal to or greater than the first width.
  • the inventive concept is not limited to the above description.
  • the second width of the protrusion 107 p may be less than the first width of the isolation pattern 140 a.
  • the dielectric patterns 140 c and the isolation pattern 140 a may define active regions in the substrate 100 .
  • a first well region 109 a and a second well region 109 b may be disposed in the drift region 107 .
  • the second well region 109 b may have the same conductivity type as the drift region 107
  • the first well region 109 a may have a different conductivity type from the drift region 107 .
  • the second well region 109 b may have the first conductivity type
  • the first well region 109 a may have a second conductivity type different from the first conductivity type.
  • the first well region 109 a and the second well region 109 b may be spaced apart from each other.
  • the first well region 109 a may be disposed in the drift region 107 between one of the two dielectric patterns 140 c and the isolation pattern 140 a .
  • the first well region 109 a may be spaced apart from the isolation pattern 140 a , for example, by a portion of the drift region 107 .
  • a dopant concentration of the drift region 107 may be less than dopant concentrations of the first well region 109 a and the second well region 109 b.
  • the second well region 109 b may be disposed in the drift region 107 between the other of the two dielectric patterns 140 c and the isolation pattern 140 a .
  • at least a portion of the isolation pattern 140 a may overlap the second well region 109 b .
  • an end portion of the isolation pattern 140 a may laterally extend into the second well region 109 b such that a sidewall of the isolation pattern 140 a is located in the second well region 109 b .
  • the inventive concept is not limited to the above description.
  • the isolation pattern 140 a may overlap the second well region 109 b .
  • the isolation pattern 140 a may be disposed in the second well region 109 b.
  • a first doping region 150 a and a second doping region 150 b may be disposed in the first well region 109 a .
  • the first doping region 150 a and the second doping region 150 b may be sequentially arrayed in a surface region of the first well region 109 a along a direction from the dielectric pattern 140 c adjacent to the first well region 109 a toward the isolation pattern 140 a .
  • the first and second doping regions 150 a and 150 b may be disposed to contact each other.
  • a conductivity type of the first doping region 150 a may be different from a conductivity type of the second doping region 150 b .
  • the first doping region 150 a may have the same conductivity type as the first well region 109 a
  • the second doping region 150 b may have the same conductivity type as the drift region 107 .
  • the first doping region 150 a when the drift region 107 have the first conductivity type, the first doping region 150 a may have the second conductivity type, and the second doping region 150 b may have the first conductivity type.
  • a third doping region 150 c may be disposed in the second well region 109 b .
  • the third doping region 150 c may be disposed in a surface region of the second well region 109 b and may overlap at least a portion of the second well region 109 b .
  • the third doping region 150 c may have the same conductivity type as the second well region 109 b and the drift region 107 .
  • the third doping region 150 c may also have the first conductivity type.
  • a dopant concentration of the first doping region 150 a may be greater than a dopant concentration of the first well region 109 a
  • dopant concentrations of the second and third doping regions 150 b and 150 c may be greater than a dopant concentration of the second well region 109 b.
  • a gate pattern 170 may be disposed on the substrate 100 .
  • the gate pattern 170 may overlap at least a portion of the isolation pattern 140 a , a portion of the drift region 107 , and at least a portion of the first well region 109 a .
  • the gate pattern 170 may cover a portion of the drift region 107 between the isolation pattern 140 a and the first well region 109 a and a portion of the first well region 109 a between the second doping region 150 b and the drift region 107 .
  • a portion of the first well region 109 a which overlaps the gate pattern 170 , may correspond to a channel region.
  • an inversion channel may be formed in the channel region.
  • carriers e.g., electrons or holes
  • the first doping region 150 a may have a P type conductivity
  • the second doping region 150 b may have an N type conductivity
  • the third doping region 150 c may have an N type conductivity.
  • the second doping region 150 b and the third doping region 150 c may be a source and drain region, respectively.
  • the semiconductor device may be an N type power MOSFET.
  • the first doping region 150 a may have an N type conductivity
  • the second doping region 150 b may have a P type conductivity
  • the third doping region 150 c may have an P type conductivity.
  • the semiconductor device may be a P type power MOSFET.
  • the gate pattern 170 may include at least one of a doped semiconductor layer (e.g., a doped silicon layer, a doped germanium layer or the like), a metal layer (e.g., a tungsten layer, a titanium layer, a tantalum layer or the like), a conductive metal nitride layer (e.g., a titanium nitride layer, a tantalum nitride layer or the like), and a metal-semiconductor compound layer (e.g., a tungsten silicide layer, a cobalt silicide layer or the like).
  • a doped semiconductor layer e.g., a doped silicon layer, a doped germanium layer or the like
  • a metal layer e.g., a tungsten layer, a titanium layer, a tantalum layer or the like
  • a conductive metal nitride layer e.g., a titanium nitride layer, a tanta
  • a gate dielectric pattern 160 may be disposed between the substrate 100 and the gate pattern 170 .
  • the gate dielectric pattern 160 may include at least one of an oxide layer (e.g., a thermal oxide layer), a nitride layer, and a high-k dielectric layer (e.g., a metal oxide layer such as an aluminum oxide layer, a hafnium oxide layer or the like).
  • An interlayer dielectric layer 180 may be disposed on the substrate including the gate pattern 170 .
  • the interlayer dielectric layer 180 may cover the gate pattern 170 and the substrate 100 .
  • the interlayer dielectric layer 180 may include an oxide layer, a nitride layer or an oxynitride layer.
  • the interlayer dielectric layer 180 may have a single-layered structure or a multi-layered structure.
  • First, second, third and fourth contact plugs 185 a , 185 b , 185 c and 185 d may be disposed in the interlayer dielectric layer 180 .
  • the first, second, third and fourth contact plugs 185 a , 185 b , 185 c and 185 d may be spaced apart from each other.
  • the first contact plug 185 a may be electrically connected to the first doping region 150 a
  • the second contact plug 185 b may be electrically connected to the second doping region 150 b .
  • the third contact plug 185 c may be electrically connected to the third doping region 150 c
  • the fourth contact plug 185 d may be electrically connected to the gate pattern 170 .
  • Each of the first, second, third and fourth contact plugs 185 a , 185 b , 185 c and 185 d may include a conductive material.
  • each of the first, second, third and fourth contact plugs 185 a , 185 b , 185 c and 185 d may include at least one of a doped semiconductor layer (e.g., a doped silicon layer, a doped germanium layer or the like), a metal layer (e.g., a tungsten layer, a titanium layer, a tantalum layer or the like), a conductive metal nitride layer (e.g., a titanium nitride layer, a tantalum nitride layer or the like), and a metal-semiconductor compound layer (e.g., a tungsten silicide layer, a cobalt silicide layer or the like).
  • First, second and third interconnection lines 193 , 195 and 197 may be disposed on the interlayer dielectric layer 180 .
  • the first interconnection line 193 may be electrically connected to the first and second contact plugs 185 a and 185 b .
  • the second interconnection line 195 may be electrically connected to the fourth contact plug 185 d
  • the third interconnection line 197 may be electrically connected to the third contact plug 185 c.
  • Each of the first, second and third interconnection lines 193 , 195 and 197 may include a conductive material.
  • each of the first, second and third interconnection lines 193 , 195 and 197 may include at least one of a doped semiconductor layer (e.g., a doped silicon layer, a doped germanium layer or the like), a metal layer (e.g., a tungsten layer, a titanium layer, a tantalum layer or the like), a conductive metal nitride layer (e.g., a titanium nitride layer, a tantalum nitride layer or the like), and a metal-semiconductor compound layer (e.g., a tungsten silicide layer, a cobalt silicide layer or the like).
  • a doped semiconductor layer e.g., a doped silicon layer, a doped germanium layer or the like
  • a metal layer e.g., a tungsten layer, a
  • the first depth D 1 of the isolation pattern 140 a may be less than the second depth D 2 of the two dielectric patterns 140 c .
  • the isolation pattern 140 a may have a function enduring a high voltage between the third doping region 150 c and the gate pattern 170 .
  • an inversion channel may be formed in a portion of the first well region 109 a overlapping the gate pattern 170 .
  • carriers e.g., electrons or holes
  • the carriers may move through the drift region 107 between the first well region 109 a and the isolation pattern 140 a .
  • the first depth D 1 of the isolation pattern 140 a is equal to or greater than the second depth D 2 of the two dielectric patterns 140 c , a drift length of the carriers between the first well region 109 a and the second well region 109 b may increase.
  • an on-resistance of the power MOS transistor may also be increased.
  • the first depth D 1 of the isolation pattern 140 a may be less than the second depth D 2 of the two dielectric patterns 140 c as described above.
  • the drift length of the carriers between the first well region 109 a and the second well region 109 b may be reduced to minimize the on-resistance of the power MOS transistor.
  • the drift region 107 may include the body and the protrusion 107 p downwardly protruding from the body.
  • a depth of the drift region 107 under the isolation pattern 140 a may increase because of the presence of the protrusion 107 p .
  • a cross sectional area of the drift region 107 , through which the carriers are drifted, may increase to reduce the on-resistance of the power MOS transistor.
  • FIG. 2 is a cross sectional view illustrating a semiconductor device according to an embodiment.
  • a substrate 100 includes a transistor region A and an alignment region B.
  • the transistor region A may include all the elements described in connection with FIG. 1 .
  • a buried dielectric pattern 140 b may be disposed in the substrate 100 of the alignment region B.
  • the buried dielectric pattern 140 b may include a nitride material, an oxide material or an oxynitride material.
  • the buried dielectric pattern 140 b may include the same dielectric material as the isolation pattern 140 a and the dielectric patterns 140 c .
  • all of the buried dielectric pattern 140 b , the isolation pattern 140 a and the dielectric patterns 140 c may include a silicon oxide material.
  • the buried dielectric pattern 140 b may have a third depth D 3 .
  • the third depth D 3 of the buried dielectric pattern 140 b may be equal or substantially equal to the first depth D 1 of the isolation pattern 140 a .
  • the third depth D 3 of the buried dielectric pattern 140 b may be less than the second depth of the dielectric patterns 140 c.
  • the semiconductor device of FIG. 2 may exhibit the same or substantially the same effect as the semiconductor device described with reference to FIG. 1 .
  • FIGS. 3 to 8 are cross sectional views illustrating a method of forming a semiconductor device according to an embodiment.
  • a substrate 100 having a transistor region A and an alignment region B may be provided.
  • the alignment region B may be provided to form alignment keys used in exposure processes, and the transistor region A may be provided to form transistors constituting a semiconductor device.
  • the substrate 100 may be a silicon substrate, a germanium substrate or a compound semiconductor substrate.
  • the substrate 100 may include an epitaxial semiconductor layer.
  • An anti-reflection layer 110 may be formed on the substrate 100 .
  • the anti-reflection layer 110 may be formed of a material having etch selectivity with respect to the substrate 100 .
  • the anti-reflection layer 110 may be formed of a silicon nitride layer.
  • a first mask pattern 120 may be formed on the anti-reflection layer 110 .
  • the first mask pattern 120 may be formed to include a first opening 115 a and a second opening 115 b .
  • the first opening 115 a may be formed in the transistor region A, and the second opening 115 b may be formed in the alignment region B.
  • Each of the first opening 115 a and the second opening 115 b may expose a portion of the anti-reflection layer 110 .
  • a first trench 105 a and a second trench 105 b may be formed in the substrate 100 .
  • the first trench 105 a may be formed in the substrate 100 of the transistor region A
  • the second trench 105 b may be formed in the substrate 100 of the alignment region B.
  • the second trench 105 b may be used as an alignment key in subsequent exposure processes.
  • the first trench 105 a and the second trench 105 b may be formed by sequentially etching the anti-reflection layer 110 and the substrate 100 using the first mask pattern 120 as an etch mask.
  • the anti-reflection layer 110 and the substrate 100 may be etched using at least a dry etching process.
  • etching the anti-reflection layer 110 and etching the substrate 100 may be performed in a single process chamber.
  • the anti-reflection layer 110 and the substrate 100 may be etched using two different dry etching processes.
  • the anti-reflection layer 110 may be etched in a first process chamber, and the substrate 100 may be etched in a second process chamber different from the first process chamber.
  • the first trench 105 a may be formed to have a first depth D 1
  • the second trench 105 b may be formed to have a third depth D 3 .
  • the first depth D 1 may be equal or substantially equal to the third depth D 3 .
  • the first trench 105 a may be formed to have a uniform depth throughout an entire region thereof.
  • an entire bottom surface of the first trench 105 a may be flat without any uneven profile or any step differences.
  • the first mask pattern 120 may be removed.
  • the first mask pattern 120 may be removed using an etching process that exhibits an etch selectivity with respect to the anti-reflection layer 110 and the substrate 100 .
  • the first mask pattern 120 may be removed using a wet etching process.
  • a second mask pattern 133 may be formed on the substrate where the first mask pattern 120 is removed.
  • the second mask pattern 133 may be formed to fill the second trench 105 b .
  • the second mask pattern 133 may be formed to completely cover the alignment region B and to expose a portion (e.g., the first trench 105 a ) of the transistor region A.
  • the second mask pattern 133 may be formed of a photoresist layer.
  • a drift region 107 may be formed in the substrate 100 under a region exposed by the second mask pattern 133 .
  • the drift region 107 may be formed by implanting dopants of a first conductivity type into the substrate 100 using the second mask pattern 133 as an implantation mask.
  • the drift region 107 may be formed to have a protrusion 107 p that protrudes toward a bottom surface of the substrate 100 .
  • This protrusion 107 p may be formed due to the presence of the first trench 105 a .
  • the protrusion 107 p may be formed to have a similar profile to the first trench 105 a .
  • the protrusion 107 p may be formed since the drift region 107 is formed after formation of the first trench 105 a.
  • the second mask pattern 133 may be removed.
  • the second mask pattern 133 may be removed using an etching process that exhibits an etch selectivity with respect to the anti-reflection layer 110 and the substrate 100 .
  • the second mask pattern 133 may be removed using a wet etching process.
  • a third mask pattern 135 may be formed on the substrate where the second mask pattern 133 is removed.
  • the third mask pattern 135 may be formed to fill the second trench 105 b .
  • the third mask pattern 135 may be formed to completely cover the alignment region B and to expose some portions of the transistor region A.
  • the third mask pattern 135 may be formed of a photoresist layer.
  • Two third trenches 105 c may be formed in the substrate 100 .
  • the two third trenches 105 c may be formed by etching the substrate using the third mask pattern 135 as an etch mask.
  • the two third trenches 105 c may be formed to be spaced apart from each other.
  • One of the two third trenches 105 c may be formed to be adjacent to a first end of the drift region 107
  • the other of the two third trenches 105 c may be formed to be adjacent to a second end of the drift region 107 , which is located opposite to the first end. Accordingly, the drift region 107 may be disposed between the two third trenches 105 c.
  • the two third trenches 105 c may be formed to have a second depth D 2 .
  • the second depth D 2 may be greater than the first depth D 1 .
  • the second depth D 2 may be greater than about twice the first depth D 1 .
  • the third mask pattern 135 may be removed.
  • An isolation pattern 140 a , two dielectric patterns 140 c and a buried dielectric pattern 140 b may be then formed in the substrate 100 .
  • the isolation pattern 140 a may be formed in the first trench 105 a
  • the two dielectric patterns 140 c may be respectively formed in the two third trenches 105 c
  • the buried dielectric pattern 140 b may be formed in the second trench 105 b.
  • the isolation pattern 140 a , the two dielectric patterns 140 c and the buried dielectric pattern 140 b may be formed by depositing a dielectric layer on the substrate where the third mask pattern 135 is removed and by planarizing the dielectric layer until a top surface of the substrate 100 is exposed.
  • the dielectric patterns 140 c and the isolation pattern 140 a may define active regions.
  • a first well region 109 a and a second well region 109 b may be formed in the substrate 100 .
  • the first well region 109 a may be formed in the drift region 107 between one of the two dielectric patterns 140 c and the isolation pattern 140 a .
  • the first well region 109 a may be formed by implanting dopants of a second conductivity type into the drift region 107 between one of the two dielectric patterns 140 c and the isolation pattern 140 a .
  • the second conductivity type may be a different conductivity type from the first conductivity type.
  • the first conductivity type is an N-type
  • the second conductivity type may be a P-type.
  • a first end of the first well region 109 a may contact one of the two dielectric patterns 140 c .
  • a second end of the first well region 109 a which is positioned opposite to the first end, may be spaced apart from the isolation pattern 140 a .
  • a portion of the drift region 107 may be provided between the first well region 109 a and the isolation pattern 140 a.
  • the second well region 109 b may be formed in the drift region 107 between the other of the two dielectric patterns 140 c and the isolation pattern 140 a .
  • the second well region 109 b may be formed by implanting dopants of the first conductivity type into the drift region 107 between the other of the two dielectric patterns 140 c and the isolation pattern 140 a .
  • a first end of the second well region 109 b may contact the isolation pattern 140 a
  • a second end of the second well region 109 b which is positioned opposite to the first end, may contact the other of the two dielectric patterns 140 c.
  • a first doping region 150 a and a second doping region 150 b may be formed in the first well region 109 a .
  • the first doping region 150 a may be formed by implanting dopants of the second conductivity type into a portion of the first well region 109 a
  • the second doping region 150 b may be formed by implanting dopants of the first conductivity type into the first well region 109 a adjacent to the first doping region 150 a.
  • the first doping region 150 a and the second doping region 150 b may be formed to be laterally adjacent to each other in a surface region of the first well region 109 a .
  • the first doping region 150 a and the second doping region 150 b may be formed to be sequentially arranged along a direction from the dielectric pattern 140 c adjacent to the first well region 109 a toward the isolation pattern 140 a .
  • the first and second doping regions 150 a and 150 b may be formed to contact each other.
  • a third doping region 150 c may be formed in the second well region 109 b .
  • the third doping region 150 c may be formed by implanting dopants of the first conductivity type into a surface region of the second well region 109 b.
  • a gate dielectric pattern 160 and a gate pattern 170 may be formed on the substrate 100 .
  • the gate dielectric pattern 160 and the gate pattern 170 may be formed by sequentially forming a gate dielectric layer and a gate conductive layer on the substrate 100 and by patterning the gate conductive layer and the gate dielectric layer.
  • an interlayer dielectric layer 180 may be formed on the substrate including the gate dielectric pattern 160 and the gate pattern 170 .
  • the interlayer dielectric layer 180 may be formed using a chemical vapor deposition (CVD) process.
  • First, second, third and fourth holes may be formed to penetrate the interlayer dielectric layer 180 .
  • the first hole may be formed to expose a portion of the first doping region 150 a
  • the second hole may be formed to expose a portion of the second doping region 150 b
  • the third hole may be formed to expose a portion of the third doping region 150 c
  • the fourth hole may be formed to expose a portion of the gate pattern 170 .
  • First, second, third and fourth contact plugs 185 a , 185 b , 185 c and 185 d may be formed in the first, second, third and fourth holes, respectively.
  • the first, second, third and fourth contact plugs 185 a , 185 b , 185 c and 185 d may be formed by depositing a conductive layer on the substrate including the first, second, third and fourth holes and by planarizing the conductive layer until a top surface of the interlayer dielectric layer 180 is exposed.
  • First, second and third interconnection lines 193 , 195 and 197 may be formed on the interlayer dielectric layer 180 .
  • the first interconnection line 193 may be electrically connected to the first and second contact plugs 185 a and 185 b .
  • the second interconnection line 195 may be electrically connected to the fourth contact plug 185 d .
  • the third interconnection line 197 may be electrically connected to the third contact plug 185 c .
  • the first, second and third interconnection lines 193 , 195 and 197 may be formed by depositing a conductive layer on the substrate including the first to fourth contact plugs 185 a , 185 b , 185 c and 185 d and by patterning the conductive layer.
  • a first trench may be formed in a substrate of a transistor region, and a second trench used as an alignment key in exposure processes is formed in the substrate of an alignment region. Without an additional patterning process, the first trench shallower than a third trench may be formed since the first and second trenches are simultaneously formed using a single patterning process.
  • a fabrication process of a semiconductor device may be simplified to reduce fabrication costs of the semiconductor device.
  • a depth of the first trench, at which an isolation pattern is formed may be less than a depth of third trenches at which dielectric patterns 140 c are formed. Hence, a drift length of carriers moving along a drift region may be reduced to minimize the on-resistance of a power MOS transistor.
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TW201330115A (zh) 2013-07-16
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