US20070235061A1 - Cleaning Agent for Substrate and Cleaning Method - Google Patents

Cleaning Agent for Substrate and Cleaning Method Download PDF

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Publication number
US20070235061A1
US20070235061A1 US10/577,129 US57712904A US2007235061A1 US 20070235061 A1 US20070235061 A1 US 20070235061A1 US 57712904 A US57712904 A US 57712904A US 2007235061 A1 US2007235061 A1 US 2007235061A1
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Prior art keywords
acid
cleaning agent
group
substrate
cleaning
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US10/577,129
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English (en)
Inventor
Hironori Mizuta
Masahiko Kakizawa
Ichiro Hayashida
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Fujifilm Wako Pure Chemical Corp
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Wako Pure Chemical Industries Ltd
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Assigned to WAKO PURE CHEMICAL INDUSTRIES, LTD. reassignment WAKO PURE CHEMICAL INDUSTRIES, LTD. ASSIGNMENT OF ASSIGNORS INTEREST (SEE DOCUMENT FOR DETAILS). Assignors: HAYASHIDA, ICHIRO, KAKIZAWA, MASAHIKO, MIZUTA, HIRONORI
Publication of US20070235061A1 publication Critical patent/US20070235061A1/en
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02043—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H01L21/02052—Wet cleaning only
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D11/00—Special methods for preparing compositions containing mixtures of detergents ; Methods for using cleaning compositions
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/261—Alcohols; Phenols
    • C11D7/262—Alcohols; Phenols fatty or with at least 8 carbon atoms in the alkyl or alkenyl chain
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/263—Ethers
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/26—Organic compounds containing oxygen
    • C11D7/264—Aldehydes; Ketones; Acetals or ketals
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/32—Organic compounds containing nitrogen
    • C11D7/3245—Aminoacids
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/22—Organic compounds
    • C11D7/36—Organic compounds containing phosphorus
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23G—CLEANING OR DE-GREASING OF METALLIC MATERIAL BY CHEMICAL METHODS OTHER THAN ELECTROLYSIS
    • C23G5/00—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents
    • C23G5/02—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents
    • C23G5/032—Cleaning or de-greasing metallic material by other methods; Apparatus for cleaning or de-greasing metallic material with organic solvents using organic solvents containing oxygen-containing compounds
    • C11D2111/22—

Definitions

  • the present invention relates to a cleaning agent for a surface of substrate, in particular, for a surface of semiconductor substrate provided with copper wiring thereon, and to a cleaning method thereof.
  • CMP chemical mechanical polishing
  • the CMP is a method for planarizing a surface of semiconductor substrate using a slurry containing abrasive grains such as silica, aluminum and ceria, and an object to be polished is silicon oxide films, wirings, plugs, or the like.
  • the semiconductor surface after the CMP process is contaminated with a large amount of abrasive grain itself used, metals contained in the slurry, or metallic impurities derived from metallic wirings or metallic plug polished, and further various kinds of particles.
  • Contamination of the surface of semiconductor substrate with the metallic impurities or the particles affects electric characteristics of the semiconductor, and causes to lose reliability of devices. Further, since device is destructed when metallic contamination is significant, it is necessary to introduce a post-CMP cleaning process to remove metallic impurities or particles from the surface of semiconductor substrate.
  • metal corrosion inhibitors for example, an aromatic type compound represented by benzotriazole(BTA)s and imidazoles, a cyclic compound such as mercaptoimidazole and mercaptothiazole, an aliphatic alcohol type compound which has a mercapto group in a molecule and a carbon to which said mercapto group is bonded and a carbon to which a hydroxyl group is bonded links adjacently such as mercaptoethanol and mercaptoglycerol].
  • BTA benzotriazole
  • imidazoles a cyclic compound such as mercaptoimidazole and mercaptothiazole
  • an aliphatic alcohol type compound which has a mercapto group in a molecule and a carbon to which said mercapto group is bonded and a carbon to which a hydroxyl group is bonded links adjacently such as mercaptoethanol and mercaptoglycerol.
  • the metal corrosion inhibitor is supposed to be adsorbed on a surface of metal (for example, Cu) of semiconductor surface and form a metal corrosion inhibiting film (for example, a metal corrosion inhibitor—Cu film such as a Cu-BTA film), and thus to prevent corrosion of the metal (for example, Cu).
  • a metal corrosion inhibiting film for example, a metal corrosion inhibitor—Cu film such as a Cu-BTA film
  • metal corrosion inhibitors may remain on a surface of semiconductor as a so-called carbon defect.
  • a cleaning agent which is conventionally used in various cleaning processes such as a post-CMP cleaning process, cannot sufficiently remove the carbon defect, or apt to remove a metal corrosion inhibiting film that is needed to prevent corrosion of metal surface as described above.
  • an effective means has not been found which can remove only the carbon defect while maintaining the metal corrosion inhibiting effect, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film as described above.
  • Patent Reference 1 JP-A-4-130100 (claims 1 to 3 )
  • Patent Reference 2
  • JP-A-7-79061 (claim 1 )
  • Patent Reference 3
  • Patent Reference 4 JP-A-10-26832 (claims 1 to 15 )
  • Patent Reference 5 JP-A-11-316464 (claims 1 to 6 )
  • Patent Reference 6 JP-A-2002-20787 (claims 1 to 36 )
  • Patent Reference 7 JP-A-2003-13266 (claims 1 to 42 )
  • the present invention has been made under such circumstances as described above, and provides a cleaning agent for a substrate and a cleaning method thereof, which can effectively remove fine particles (particles) present on a surface of substrate or impurities (metallic impurities) derived from various kinds of metals, without causing roughness surface of a substrate, in particular, a semiconductor substrate, and without causing corrosion or oxidation of metal wirings, in particular, copper wirings, provided on a surface of substrate, and further can remove at the same time the carbon defect present on a surface of substrate, without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.
  • a metal corrosion inhibitor—Cu film in particular, a Cu-BTA film.
  • the present invention consists of the following items:
  • a cleaning agent for a substrate comprising [I] an organic acid having at least one carboxyl group and/or [II] a complexing agent, and [III] an organic solvent selected from the group consisting of (1) monohydric alcohols, (2) alkoxyalcohols, (3) glycols, (4) glycol ethers, (5) ketones and (6) nitriles; and
  • the present inventors have, after intensively studying a way to achieve the above-described object, found that not only particles and metallic impurities on a surface of substrate can be removed without causing roughness surface of a semiconductor substrate or corrosion or oxidation of metal wirings, in particular, cupper wirings provided on a semiconductor substrate, but also a carbon defect remaining on a substrate surface can also be easily removed at the same time without losing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film, by cleaning the substrate surface using a cleaning agent for substrate comprising [I] an organic acid having at least one carboxyl group and/or [II] a complexing agent and [III] a specified organic solvent, in particular, a cleaning agent for substrate comprising [I] an organic acid having at least one carboxyl group, [II] a complexing agent and [III] a specified organic solvent, and further that specified solvents, among organic solvents, are superior in exhibiting such an effect, and a combined use of the specified organic solvents and a compound having
  • a carbon defect becomes unstable in the optimum pH range generated by an organic acid and is hence dissolved in an organic solvent.
  • a metal corrosion inhibiting film for example, a metal corrosion inhibitor—Cu film such as a Cu-BTA film
  • a dissolution selection ratio of the carbon defect and the metal corrosion inhibiting film for example, a Cu-BTA film
  • only the carbon defect can be removed without removing the metal corrosion inhibiting film (in particular, a Cu-BTA film) while the metal corrosion inhibiting effect is maintained.
  • the organic solvent according to the present invention is water-soluble, but all of water-soluble organic solvents cannot necessarily be used.
  • Those which can satisfy the object of the present invention include, for example, monohydric alcohols such as saturated aliphatic monohydric alcohols having 1 to 10 carbon atoms, preferably 1 to 8 carbon atoms, and more preferably 1 to 5 carbon atoms, unsaturated aliphatic monohydric alcohols having 2 to 12 carbon atoms, preferably 2 to 10 carbon atoms, and more preferably 2 to 6 carbon atoms; alkoxyalcohols having 3 to 20 carbon atoms, preferably 3 to 16 carbon atoms, and more preferably 3 to 10 carbon atoms; glycols having 2 to 40 carbon atoms, preferably 2 to 20 carbon atoms, and more preferably 2 to 16 carbon atoms; glycol ethers having 3 to 40 carbon atoms, preferably 3 to 30 carbon atoms, and more preferably 3 to 20 carbon atoms; ketones having 3 to 40 carbon atoms
  • Monohydric alcohols include, for example, saturated aliphatic monohydric alcohols such as methanol, ethanol, n-propylalcohol, isopropylalcohol, 1-butanol, 2-butapanol, isobutylalcohol, tert-butylalcohol, 1-pentanol, 2-pentanol, 3-pentanol, 2-methyl-1-butanol, isopentylalcohol, sec-butylalcohol, tert-pentylalcohol, 3-methyl-2-butanol, neopentylalcohol, 1-hexanol, 2-methyl-1-pentanol, 4-methyl-2-pentanol, 2-ethyl-1-butanol, 1-heptanol, 2-heptanol, 3-heptanol, 1-octanol, 2-octanol, 2-ethyl-1-hexanol
  • Alkoxyalcohols include, for example, 2-methoxyethanol, 2-ethoxyethanol, 2-(2-methoxy)ethoxyethanol, 2-(2-butoxyethoxy)ethanol, 2-propoxyethanol, 2-butoxyethanol, 3-methoxy-3-methyl-1-butanol, 2-(methoxymethoxy)ethanol, 2-isopropoxyethanol, 2-butoxyethanol and 2-isopentyloxyethanol.
  • Glycols include, for example, ethylene glycol, propylene glycol, butylene glycol, hexylene glycol, diethylene glycol, dipropylene glycol, trimethylene glycol, triethylene glycol, tetraethylene glycol, polyethylene glycol, polypropylene and tetraethylene glycol.
  • Glycol ethers include, for example, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, ethylene glycol mono n-propyl ether, ethylene glycol mono n-butyl ether, ethylene glycol dimethyl ether, ethylene glycol diethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutylether, diethylene glycol monohexyl ether, diethylene glycol dimethyl ether, diethylene glycol diethyl ether, triethylene glycol monomethyl ether, triethylene glycol monoethyl ether, 1-methoxy-2-propanol, 1-ethoxy-2-propanol, propylene glycol monoethyl ether, dipropylene glycol monomethyl ether, dipropylene glycol monoethyl ether, tripropylene glycol monomethyl ether, polyethylene glycol monomethyl ether and 3-methoxy-3-methyl-1-but
  • Ketones include, for example, acetone, methyl ethyl ketone, 2-pentanone, 3-pentanone, 2-hexanone, cyclohexanone, methyl isobutyl ketone, 2-heptanone, 4-heptanone, diisobutyl ketone, acetyl acetone, mesityloxide, phorone, isophorone, cyclohexanone, methylcyclohexanone, acetophenone, camphor, cyclopentanone and hexafluoroacetylacetone.
  • Nitriles include, for example, simple nitriles such as acetonitrile, propionitrile, n-butyronitrile and isobutyronitrile; ⁇ -aminonitriles such as ⁇ -aminopropionitrile, ⁇ -aminomethylthiobutyronitrile, ⁇ -aminobutyronitrile and aminoacetonitrile; ⁇ -hydroxylnitriles such as lactonitrile, hydroxyacetonitrile and ⁇ -hydroxy- ⁇ -methylthiobutyronitrile; ⁇ -aminonitriles such as amino-3-propionitrile; dinitriles such as malononitrile, succinonitrile and adiponitrile; ⁇ -unsaturated nitrites such as acrylonitrile and methacrylonitrile; ⁇ -benzenenitriles such as homoveratrinitrile and benzonitrile; heterocyclic nitrites such as nicotinon
  • saturated aliphatic monohydric alcohols, alkoxyalcohols, glycols, glycol ethers, and simple nitrites are preferable, and further, methanol, ethanol, isopropyl alcohol, 2-methoxyethanol, 2-(2-butoxyethoxy)ethanol, ethylene glycol, diethylene glycol monomethyl ether, acetone and acetonitrile are more preferable, because these compounds have a superior ability for removing the carbon defect.
  • the organic solvent according to the present invention may be used alone or in combination of two or more kinds.
  • the organic solvent according to the present invention is contained to remove a carbon defect which remains on a surface of substrate, in particular, a surface of semiconductor substrate with metal wirings of Cu or the like provided thereon, which has been treated with a slurry containing a metal corrosion inhibitor in a CMP treatment or the like.
  • the organic solvent according to the present invention can remove a carbon defect without removing a metal corrosion inhibiting film (for example, a metal corrosion inhibitor—Cu film such as a Cu-BTA film) which has been formed on a surface of semiconductor substrate, and also can remove a carbon defect without dissolving, corroding, oxidizing or decomposing apparatus components relating to device production such as semiconductor materials, wiring materials and plug materials.
  • a metal corrosion inhibiting film for example, a metal corrosion inhibitor—Cu film such as a Cu-BTA film
  • the carbon defect is derived from slurry additives added to a slurry, for example, aromatic compounds such as a metal corrosion inhibitor [for example, BTAs and benzimidazoles (JP-A-7-79061 or the like)], in particular, from BTAs such as BTA or BTA derivatives.
  • aromatic compounds such as a metal corrosion inhibitor [for example, BTAs and benzimidazoles (JP-A-7-79061 or the like)]
  • BTAs such as BTA or BTA derivatives.
  • BTA or BTA derivatives include, for example, benzotriazole, lower alkylbenzotriazoles such as 4- or 5-methylbenzotriazole, 4- or 5-ethylbenzotriazole, 4- or 5-propylbenzotriazole, 4- or 5-isopropylbenzotriazole, 4- or 5-n-butylbenzotriazole, 4- or 5-isobutylbenzotriazole, 4- or 5-pentylbenzotriazole, 4- or 5-hexylbenzotriazole; 5-methoxybenzotriazole, 1-hydroxybenzotriazole, 5-hydroxybenzotriazole, dihydroxypropylbenzotriazole, carboxybenzotriazole, 2,3-dicarboxypropylbenzotriazole, 1-[N,N-bis(2-ethylhexyl)aminomethyl]benzotriazole, 1-[maleic acid]benzotriazole, 1-(substitited aminomethyl)-tolyltriazole (Trade Name
  • the carbon defect is formed by these slurry additives (for example, BTAs) which, for example, melt by a pressure or the like in a CMP process then solidify by cooling on a metal corrosion inhibiting film (for example, a Cu-BTA film) formed on a semiconductor substrate with metal wiring such as of Cu and Ag provided thereon.
  • BTAs slurry additives
  • a metal corrosion inhibiting film for example, a Cu-BTA film
  • the complexing agent according to the present invention is not particularly limited so long as it forms a complex with metallic impurities, and includes, for example, a compound having at least one carboxyl group in a molecule, a compound having at least one phosphonic acid group in a molecule, N-substituted amino acids, condensed phosphoric acids, and ammonium salts or alkali metal salts thereof.
  • the compound having at least one carboxyl group in a molecule is preferably a nitrogen-containing polycarboxylic acid having 1 to 4 nitrogen atoms And 9 to 6 carboxyl groups in a molecule, and specifically includes, for example, alkylimimo polycarboxylic acids which may have a hydroxyl group such as hydroxyethyliminodiacetic acid [HIDA] and iminodiacetic acid [IDA]; nitrilopolycarboxylic acids such as nitrilotriacetic acid [NTA] and nitrilotripropionic acid [NTP]; mono- or polyalkylene polyamine polycarboxylic acids which may have a hydroxyalkyl group, a hydroxyaryl group or a hydroxyaralkyl group such as ethylendiamine tetraacetic acid [EDTA], ethylendiamine diacetic acid [EDDA], ethylendiamine dipropionic acid dihydrochloric acid [EDDP],
  • the compound having at least one phosphonic acid group in a molecule includes, for example, a nitorogen-containing polyphosphonic acid having 1 to 6 nitrogen atoms and 1 to 8 phosphonic acid groups in a molecule such as alkylaiminopoly(alkylphosphonic acid), mono- or polyalkylenepolyamine poly(alkylphosphonic acid) and nitrilopoly(alkylphosphonic acid); arylphosphonic acid; alkylenepolyphosphonic acid; and alkanepolyphosphonic acid which may have a hydroxyl group.
  • a nitorogen-containing polyphosphonic acid having 1 to 6 nitrogen atoms and 1 to 8 phosphonic acid groups in a molecule such as alkylaiminopoly(alkylphosphonic acid), mono- or polyalkylenepolyamine poly(alkylphosphonic acid) and nitrilopoly(alkylphosphonic acid); arylphosphonic acid; alkylenepolyphosphonic acid; and alkane
  • the compound having at least one phosphonic acid group is more preferably a compound represented by the following general formula [1], [2] or [4]: (wherein, X represents a hydrogen atom or a hydroxyl group, and R 1 represents a hydrogen atom or an alkyl group); (wherein, Q represents a hydrogen atom, or —R 3 —PO 3 H 2 group, R 2 and R 3 represent each independently an alkylene group, and Y represents a hydrogen atom, —R 3 —PO 3 H 2 group or a group represented by the following general formula [3]): (wherein, Q and R 3 are same to the above); (wherein, R 4 and R 5 represent each independently a lower alkylene group, n represents an integer of 1 to 4, Z 1 to Z 4 and at least 4 of n ⁇ Z 5 represent an alkyl group having a phosphonic acid group, and the rest represents an alkyl group.)
  • the alkyl group represented by R 1 is preferably a straight chained or a branched one having 1 to 10 carbon atoms, and includes, for example, a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a tert-butyl group, a sec-butyl group, a n-pentyl group, an isopentyl group, a tert-pentyl group, a 1-methylpentyl group, a n-hexyl group, an isohexyl group, a heptyl group, an octyl group, a nonyl group and a decyl group.
  • each of the alkylene groups represented by R 1 and R 2 is preferably a straight chained or a branched one having 1 to 10 carbon atoms, and includes, for example, a methylene group, an ethylene group, a propylene group, a methylethylene group, an ethylmethylene group, a butylene group, a 2-methylpropylene group, an ethylethylene group, a pentylene group, a 2,2-dimethylpropylene group, a 2-ethylpropylene group, a hexylene group, a heptylene group, an octylene group, a 2-ethylhexylene group, a nonylene group and a decylene group.
  • the lower alkylene group represented by R 4 or R 5 is preferably a straight chained or a branched one having 1 to 4 carbon atoms, and specifically includes, for example, a methylene group, an ethylene group, a propylene group, a methylmethylene group, a methylethylene group, an ethylmethylene group, a butylene group, a methylpropylene group and an ethylethylene group.
  • the alkyl group and the alkyl group of the alkyl group having a phosphonic acid group represented by Z 1 to Z 5 is preferably a straight chained or a branched one having 1 to 4 carbon atoms, and includes, for example, a methyl group, an ethyl group, a n-propyl group, an isopropyl group, a n-butyl group, an isobutyl group, a sec-butyl group and a tert-butyl group.
  • the number of phosphonic acid group in these alkyl groups is generally 1 to 2, and preferably 2.
  • n in the above general formula [4] is preferably an integer of 1 to 2, from the viewpoint of easiness in production.
  • alkylaminopoly(alkylphosphonic acid) such as ethylaminobis(methylenephosphonic acid) and dodecylaminobis(methylenephosphonic acid); mono- or polyalkylenepolyamine poly(alkylphosphonic acid) such as ethylenediaminebis(methylenephosphonic acid) [EDDPO], ethylenediamine tetrakis(ethylenephosphonic acid), ethylenediamine tetrakis(methylenephosphonic acid) [EDTPO], hexamethylenediamine tetrakis(methylenephosphonic acid), isopropylenediamine bis(methylenephosphonic acid), isopropylenediaminetetra(methylenephosphonic acid), propanediamine tetra(ethylenephosphonic acid) [PDTMP], diaminopropanetetra(methylenephosphonic acid) [PDTPO], diethylenediaminebis(methylenephosphonic acid) [EDDPO], ethylenediaminebis(methylenephosphonic acid) [
  • the N-substituted amines include, for example, dihydroxyethylglycin [DHEG] and N-acetylglycin, and the condensated phosphoric acids include, for example, tripolyphosphoric acid and hexametaphosphoric acid.
  • DHEG dihydroxyethylglycin
  • N-acetylglycin N-acetylglycin
  • the condensated phosphoric acids include, for example, tripolyphosphoric acid and hexametaphosphoric acid.
  • a compound having at least one phosphonic acid group in a molecule is preferable.
  • nitrogen-containing polyphosphonic acids having 1 to 6 nitrogen atoms and 1 to 8 phosphonic acid groups in a molecule are more preferable and an alkane polyphosphonic acid which may have a hydroxyl group are more preferable, and a mono- or polyalkylenepolyamine poly(alkylphosphonic acid), a nitrilopoly(alkylphosphonic acid) and an alkane polyphosphonic acid which may have a hydroxyl group are perticularly preferable, because of superior solubility in water and complexation coefficients and the like.
  • a compound represented by the general formula [2] and a compound represented by the general formula [4] are preferable, and a compound represented by the general formula [4] is particularly preferable.
  • the complexing agent include ethylenediamine bis(methylenephosphonic acid) [EDDPO], ethylenediamine tetrakis(ethylenephosphonic acid), ethylenediamine tetrakis(methylenephosphonic acid) [EDTPO], hexamethylenediamine tetrakis(methylenephosphonic acid), isopropylenediamine bis(methylenephosphonic acid), isopropylenediamine tetra(methylenephosphonic acid), propanediamine tetra(ethylenephosphonic acid) [PDTMP], diaminopropane tetra(methylenephosphonic acid) [PDTPO], diethylenetriamine penta(ethylenephosphonic acid) [DEPPO], diethylenetriamine penta(methylenephosphonic acid) [DETPPO], triethylenetetramine hexa (ethylenephosphonic acid) [TETHP], triethylenetetramine hexa(methylenephosphonic acid) (TTHPO), nitrilotris
  • the complexing agent according to the present invention may be used alone or in combination of two or more kinds.
  • the complexing agent according to the present invention is contained to capture and remove metallic impurities which are adhered to and remain on a surface of substrate, in particular, a surface of semiconductor substrate with metallic wiring provided thereon, which has been subjected to a polishing treatment, an etching treatment, a CMP treatment or the like.
  • Metallic impurities include, for example, those derived from a transition metal such as iron (Fe), nickel (Ni) and copper (Cu); and an alkali earth metal such as calcium (Ca) and magnesium (Mg), and are, for example, these metals themselves, hydroxides thereof or oxides thereof.
  • the complexing agents according to the present invention can remove the metallic impurities by forming a stable complex ion with these metals.
  • the organic acid according to the present invention is an organic acid having at least one, preferably 1 to 3, and more preferably 2 to 3 carboxyl groups, and further may have 1 to 3 hydroxyl groups and/or 1 to 3 amino groups.
  • organic acid according to the present invention include, for example, monocarboxylic acids such as formic acid, acetic acid, propionic acid, butyric acid, n-valeric acid, 1-methylbutyric acid, 2-methylbutyric acid, caproic acid, enanthic acid, caprylic acid, trans-2-methyl-2-pentenoic acid, phenylacetic acid, 3-phenylvaleric acid, 4-phenylvaleric acid, benzoic acid, ⁇ -cyclohexylbutyric acid, ⁇ -naphthaleneacetic acid and diphenylacetic acid; dicarboxylic acids such as oxalic acid, malonic acid, succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, fumaric acid, phthalic acid, suberic acid, 2-n-butylmalonic acid, citraconic acid, mesaconic acid, isophthalic acid and terephthalic acid; tricarboxylic acids
  • dicarboxylic acids and oxydicarboxylic acids are preferable.
  • oxycarboxylic acids oxydicarboxylic acids and oxytricarboxylic acids are more preferable.
  • oxalic acid, malonic acid, fumaric acid, malic acid, tartaric acid and citric acid are particularly preferable.
  • the organic acid according to the present invention may be used alone or in combination of two or more kinds.
  • the organic acid according to the present invention dissolves a metal oxide or a metal hydroxide of Fe or Al though slightly, and formation of a metal complex between a metal ion generated by dissolution and a complexing agent results in a shift of the equilibrium towards more metal dissolution, improving dissolving power of the organic acid for metal, and thus enabling to remove a metal adsorbed on or adhered to a surface of substrate.
  • the cleaning agent for a substrate of the present invention contains an organic acid and/or a complexing agent and an organic solvent according to the present invention, in particular, the cleaning agent containing all of three components of an organic acid, a complexing agent and an organic solvent is preferable. Further, the cleaning agent of the present invention is usually in a state of solution, preferably an aqueous solution, and prepared by dissolving the organic acid and/or the complexing agent and the organic solvent according to the present invention as described above in water.
  • concentration of the organic acid according to the present invention or the complexing agent according to the present invention to be used is too low, the cleaning effect becomes insufficient, and sometimes very weak in the case when a surface of substrate is unexpectedly heavily contaminated.
  • a too high concentration of the organic acid according to the present invention to be used does not influence the cleaning effect, but is not preferable from the viewpoint of cost.
  • a too high concentration of the complexing agent according to the present invention to be used does not influence the cleaning effect, but leads to a harmful carbon contamination on a surface of semiconductor substrate, which causes a problem in electric characteristics, and is not preferable from the viewpoint of cost.
  • the organic acid according to the present invention is used in a concentration range so that a ratio of the organic acid to the total amount of the cleaning agent becomes, in the lower limit, usually not lower than 0.05% by weight, preferably not lower than 0.025% by weight, more preferably not lower than 0.5% by weight, further more preferably not lower than 1% by weight, and in the upper limit, usually not higher than 50% by weight, preferably not higher than 40% by weight, more preferably not higher than 30% by weight, further more preferably not higher than 10% by weight.
  • the complexing agent according to the present invention is used in a concentration range so that a ratio of the complexing agent to the total amount of the cleaning agent becomes, in the lower limit, usually not lower than 0.01% by weight, preferably not lower than 0.025% by weight, more preferably not lower than 0.05% by weight, further more preferably not lower than 0.1% by weight, and in the upper limit, usually not higher than 30% by weight, preferably not higher than 10% by weight, more preferably not higher than 5% by weight, further more preferably not higher than 1% by weight.
  • the organic solvent according to the present invention is used in a concentration range so that a ratio of the organic solvent to the total amount of the cleaning agent becomes, in the lower limit, usually not lower than 0.05% by weight, preferably not lower than 0.1% by weight, more preferably not lower than 0.5% by weight, further more preferably not lower than 1% by weight, and in the upper limit, usually not higher than 50% by weight, preferably not higher than 40% by weight, more preferably not higher than 20% by weight, further more preferably not higher than 10% by weight.
  • a method for dissolving the organic acid and/or the complexing agent and the organic solvent according to the present invention in water is not particularly limited so long as a solution finally containing these components can be prepared.
  • the method includes, for example, (1) a method of directly adding the organic acid and/or the complexing agent and the organic solvent according to the present invention to water, and dissolving them by stirring, (2) a method of mixing a solution containing the organic acid and/or a solution containing the complexing agent according to the present invention and a solution containing the organic solvent according to the present invention, each prepared by separately dissolving the organic acid and/or the complexing agent according to the present invention and the organic solvent according to the present invention in water, or if necessary, (3) a method of mixing a solution containing the organic acid and the complexing agent each according to the present invention prepared by directly adding the organic acid and the complexing agent each according to the present invention to water and dissolving by stirring, with a solution containing the organic solvent according to the present invention prepared by separately dissolving the organic solvent in water, (4) a method of mixing a solution containing the organic solvent and the complexing agent each according to the present invention prepared by directly adding the organic solvent and the complexing agent each according to the present invention to the present
  • the cleaning agent of the present invention thus prepared is preferably subjected to a treatment such as filtration before use.
  • Water to be used here is preferably one purified to some extent by a treatment such as distillation and ion exchange, and more preferably so-called ultra pure water used in the art.
  • the cleaning agent of the present invention is preferably acidic, and pH value thereof is, in the lower limit, usually not lower than 0.5, preferably not lower than 0.7, more preferably not lower than 1, further more preferably not lower than 2, and in the upper limit, usually not higher than 6.5, preferably not lower than 5, further more preferably not higher than 3.
  • auxiliary components may be included within a range not impairing the effects of the present invention.
  • Such auxiliary components include those usually used in the art, and specifically, for example, a reducing agent and a metal corrosion inhibitor which are used for the purposes of protecting Cu of wiring and preventing corrosion of Cu, and a surfactant which is used for the purpose of improving wetting property of the cleaning agent to a surface of semiconductor to enhance the cleaning effect.
  • the reducing agent includes, for example, hydrazine and derivatives thereof, ascorbic acid and formalin. These reducing agents may be used alone or in an appropriate combination of two or more kinds.
  • the metal corrosion inhibitor includes, as described above, aromatic compounds such as benzotriazole or derivatives thereof (for example, JP-A-51-29338, JP-A-1-195292 and JP-A-10-265979) and benzimidazoles (for example, JP-A-7-79061); cyclic compounds such as mercaptoimidazole and mercaptothiazole (for example, JP-A-2000-87268 and JP-A-2000-282096); aliphatic alcohol type compounds having a mercapto group in a molecule where a carbon to which a mercapto group is bonded and a carbon to which a hydroxyl group is bonded links together adjacently, such as mercaptoethanol and mercaptoglycerol (for example, JP-A-2000-273663); amino acids having a thiol group in a molecule such as cysteine and N-acetylcysteine (for example, JP-A-2003-13266
  • the surfactant includes, for example, nonionic surfactants having a polyoxyalkylene group in a molecule; anionic surfactants having a group selected from sulfonic acid group, carboxyl group, phosphonic acid group, sulfoxyl group and phosphonoxyl group in a molecule; amphoteric surfactants such as alkylbetaine derivatives, imidazoliniumbetaine derivatives, sulfobetaine derivatives, aminocarboxylic acid derivatives, imidazoline derivatives and amine oxide derivatives.
  • Nonionic surfactants having a polyoxyalkylenegroup in a molecule include, for example, polyoxyalkylene alkylether and polyoxyalkylene polyalkylarylether. More specifically, nonionic surfactants include, for example, nonionic surfactants having a polyoxyehylene group in a molecule such as polyoxyethylene alkylether and polyoxyethylene alkylphenylether; nonionic surfactants having a polyoxypropylene group in a molecule such as polyoxypropylene alkylether, polyoxypropylene alkylphenylether; nonionic surfactants having a polyoxyehylene group and a polyoxypropylene group in a molecule such as polyoxyethylenepolyoxypropylene alkylether and polyoxyethylenepolyoxypropylene alkylphenylether.
  • nonionic surfactants are polyoxyalkylene alkylethers. More specifically, nonionic surfactants having a polyoxyethylene group in a molecule such as polyoxyethylene alkylether and nonionic surfactants having a polyoxyethylene and a polyoxypropylene groups in a molecule such as polyoxyethylene polyoxypropylene alkylether are particularly preferable.
  • a compound represented by the formula: CH 3 (CH 2 ) k —O— (CH 2 CH 2 O) 1 —(CH 2 CH(CH 3 )O) m —H is particularly preferable.
  • methanol, ethanol, isopropyl alcohol, 2-methoxyethanol, 2-(2-butoxyethoxy)ethanol, ethyleneglycol, diethyleneglycol monomethylether, acetone, acetonitrile and polyoxyethylene polyoxypropylene alkylether are preferable.
  • methanol, ethanol, isopropyl alcohol, 2-methoxyethanol, ethyleneglycol, diethyleneglycol monomethylether, acetonitrile and polyoxyethylene polyoxypropylene alkylether are more preferable.
  • Anionic surfactants having a group selected from sulfo group, carboxylic group, phosphonic acid group, sulfoxyl group and phosphonoxyl group in a molecule include, for example, anionic surfactants having a sulfo group in a molecule such as alkylsulfonic acid, alkylbenzenesulfonic acid, alkylnaphthalene sulfonic acid, and salts thereof (for example, salts of an alkali metal such as sodium and potassium; and ammonium salt); anionic surfactants having a carboxyl group in a molecule such as alkylcarboxylic acid, alkylbenzenecarboxylic acid, alkylnaphthalenecarboxylic acid, and salts thereof (for example, salts of an alkali metal such as sodium and potassium; and ammonium salt); anionic surfactants having a phosphonic acid group in a molecule such as alkylphosphonic acid, alkylbenzene
  • anionic surfactants having a sulfo group or a sulfoxyl group in a molecule are particularly preferable. More specifically, anionic surfactants having a carboxyl group in a molecule such as alkylbenzenesulfonic acid and anionic surfactants having a sulfoxyl group in a molecule such as polyoxyethylenealkyl sulfate are particularly preferable.
  • nonionic surfactants and anionic surfactants are preferable.
  • These compounds may be used alone or in combination of two or more kinds.
  • auxiliary components may be used in such a range of concentration that they are usually used in the art.
  • the reducing agent may be used in any amount, so long as the reducing agent can prevent oxidation of metallic Cu.
  • the lower limit thereof is usually not less than 0.01% by weight, preferably not less than 0.05% by weight, more preferably not less than 0.07% by weight to the total amount of the cleaning agent, and the upper limit thereof is usually not more than 5% by weight, preferably not more than 1% by weight, more preferably not more than 0.5% by weight to the total amount of the cleaning agent.
  • the metal corrosion inhibitor can be used in any amount, so long as the inhibitor can suppress dissolving power of the cleaning agent for Cu by forming a weak bond with metallic Cu.
  • the lower limit thereof is usually not less than 0.01% by weight, preferably not less than 0.05% by weight, more preferably not less than 0.1% by weight to the total amount of the cleaning agent, and the upper limit thereof is usually not more than 5% by weight, preferably not more than 1% by weight, more preferably not more than 0.5% by weight to the total amount of the cleaning agent.
  • the surfactant can be used in any amount, so long as the surfactant can lower down surface tension of the cleaning agent.
  • the lower limit thereof is usually not less than 0.0001% by weight, preferably not less than 0.001% by weight, more preferably not less than 0.005% by weight to the total amount of the cleaning agent, and the upper limit thereof is usually not more than 1% by weight, preferably not more than 0.5% by weight, more preferably not more than 0.1% by weight to the total amount of the cleaning agent.
  • the following compounds are not desirable: compounds which dissolve the metal corrosion inhibiting film (particularly a Cu-BTA film) formed on the substrate surface by decreasing pH value of the cleaning agent (for example, an inorganic acid such as hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid and hydrofluoric acid), compounds which oxidize the metal corrosion inhibiting film (for example, an oxidizing agent such as phosphorus acid), and compounds which cause a defective Cu wiring or dissolution of Cu by specifically reacting with Cu ion to form a complex with Cu (for example, phenanthroline or derivatives thereof).
  • the cleaning agent for example, an inorganic acid such as hydrochloric acid, nitric acid, sulfuric acid, phosphoric acid and hydrofluoric acid
  • compounds which oxidize the metal corrosion inhibiting film for example, an oxidizing agent such as phosphorus acid
  • compounds which cause a defective Cu wiring or dissolution of Cu by specifically reacting with Cu ion to form a complex with Cu (for example, phenan
  • the cleaning agent of the present invention shows an effective cleaning effect even at room temperature, but may be used after properly warmed up, because the removal effect for fine particles is rather larger at a higher temperature.
  • the lower limit of the temperature is usually not lower than 30° C., preferably not lower than 35° C., more preferably not lower than 40° C.
  • the upper limit thereof is usually not higher than 80° C., preferably not higher than 70° C., and more preferably not higher than 60° C.
  • a method for cleaning a surface of substrate of the present invention may be treating the surface of semiconductor with the cleaning agent of the present invention as described above.
  • any method may be used so long as the cleaning agent of the present invention can contact with a surface of substrate, and methods which are commonly employed in the art and already known are used.
  • those includes, for example, a method where the cleaning agent of the present invention is simply coated on a surface of substrate, a method where a substrate is dipped in the cleaning agent of the present invention (dipping treatment), a method where the cleaning agent of the present invention is sprinkled like a shower or sprayed on a surface of substrate (single-wafer-based treatment).
  • particles, metallic impurities and a carbon defect can be more effectively removed by using a physical cleaning in combination in the cleaning.
  • Specific methods of the combined use include subjecting a surface of substrate to a physical cleaning process in the presence of the cleaning agent of the present invention.
  • a method for providing the cleaning agent of the present invention includes, for example, a method to apply a physical cleaning process in a state in which a cleaning agent of the present invention exist specifically by the above described method for cleaning the surface of substrate (coating method, dipping treatment and single-wafer-based treatment).
  • the physical cleaning includes, for example, brush-scrub cleaning where a surface of substrate is cleaned with a brush made of polyvinyl alcohol rotating at a high speed and megasonic cleaning where high frequency wave is used.
  • a more specific technique when physical cleaning is used in combination includes, for example, a method to apply a physical cleaning after providing a cleaning agent of the present invention on the surface of a semiconductor by coating said cleaning agent on the surface of a semiconductor, a method to apply a physical cleaning after providing a cleaning agent of the present invention on the surface of a semiconductor by dipping the semiconductor in said cleaning agent, then taking it out of said cleaning agent, a method to apply a physical cleaning while a semiconductor is dipped in a cleaning agent of the present invention, a method to apply a physical cleaning after providing a cleaning agent of the present invention on the surface of a semiconductor by showering said cleaning agent on the surface of the semiconductor, or a method to apply a physical cleaning while a cleaning agent of the present invention is showered on the surface of a semiconductor.
  • the cleaning agent of the present invention has not only capability of removing a carbon defect, but also capabilities of removing particles and metallic impurities, not only a carbon defect, but also particles and metallic impurities which remain on or adhered to a surface of substrate can be removed (cleaned) at the same time, by treating the surface of substrate with the cleaning agent of the present invention.
  • the surface of substrate can be sufficiently cleaned only by using the cleaning agent of the present invention, but the surface of substrate may be subjected to the cleaning method using the cleaning agent of the present invention as described above, then further cleaned with a cleaning agent for a substrate which is already known.
  • cleaning agents usually used in the art can be used, as disclosed, for instance, in JP-A-4-130100, JP-A-5-263275, JP-A-6-112646, JP-A-6-287774, JP-A-7-79061, JP-A-7-166381, JP-A-7-267933, JP-A-7-292483, JP-A-7-54169, JP-A-10-26832, JP-A-10-72594, JP-A-10-251867, JP-A-11-50275, JP-A-2000-8185 and JP-A-2002-20787.
  • a so-called acidic cleaning agent is preferable.
  • the cleaning agent of the present invention can be used, for example, for a substrate of semiconductor such as a so-called silicone wafer and a semiconductor of compounds (for example GaAs and GaP), a printed circuit board such as a polyimide resin, and a glass substrate for LCD and PDP, and is particularly useful for a substrate of semiconductor.
  • a substrate of semiconductor such as a so-called silicone wafer and a semiconductor of compounds (for example GaAs and GaP), a printed circuit board such as a polyimide resin, and a glass substrate for LCD and PDP, and is particularly useful for a substrate of semiconductor.
  • the cleaning agent of the present invention is useful for a substrate which is provided with wiring of metals such as copper, silver, aluminum, tungsten-plug, chrome and gold on the surface thereof, and among them, for a substrate which is provided with copper or silver wiring, and particularly for a substrate which is provided with copper wiring, and is most useful for a substrate of semiconductor which is provided with copper wiring on the surface thereof.
  • fine particles (particles) and impurities derived from various kinds of metals (metallic impurities) present on a surface of substrate can be effectively removed without causing corrosion or oxidation of metallic wiring, especially copper wiring provided on the substrate surface, and further, a carbon defect present on the substrate surface can also be removed at the same time without removing a metal corrosion inhibitor—Cu film, in particular, a Cu-BTA film.
  • a metal corrosion inhibitor—Cu film in particular, a Cu-BTA film.
  • a metallic Cu deposited wafer, a wafer provided with a Cu-BTA film, a wafer contaminated with a carbon defect and a wafer contaminated with a metal used in the present Examples and Comparative Examples are prepared according to the following methods and used, and a thickness of Cu film on a surface of the metallic Cu deposited wafer, a thickness of Cu-BTA film on a surface of the wafer provided with a Cu-BTA film, and an adsorption amount (a remaining metal concentration) of metal (Fe atom, Al atom and Cu atom) adsorbed and remaining on a surface of the wafer contaminated with a metal were measured according to the following methods, respectively.
  • the metallic Cu deposited wafer was obtained by depositing metallic Cu on a surface of 4-inch silicone wafer by a sputtering method.
  • the wafer provided with a Cu-BTA film was obtained by oxidizing a Cu surface of the metallic Cu deposited wafer with 0.1% H 2 O 2 for 15 min, thereafter dipping in 1% aqueous BTA solution for 20 min.
  • the wafer contaminated with a carbon defect was obtained by dipping the wafer provided with a Cu-BTA film in a saturated BTA aqueous solution at 80° C. for 40 min, then cooling the wafer at 10° C. under the nitrogen atmosphere.
  • the wafer contaminated with metal was obtained dipping a 6-inch silicone wafer, surface of which was oxidized to SiO 2 by thermal oxidation, in 1 L of an aqueous slurry (a 0.1% hydrogen peroxide aqueous containing 1% of silica) added with Fe ion so as to be 0.1 ppm, 1 L of an aqueous slurry (a 0.1% hydrogen peroxide containing 1% of silica) added with Al ion so as to be 0.1 ppm, or 1 L of an aqueous slurry (a 0.1% hydrogen peroxide containing 1% of silica) added with Cu ion so as to be 0.1 ppm, each for 1 min, respectively, then rinsing the wafer with flowing ultra pure water for 10 min, followed by spin-drying.
  • the wafer contaminated with particles was obtained by dipping a wafer provided with a Cu-BTA film in an aqueous slurry of 3% alumina having an average particle diameter of 0.2 ⁇ m for 1 min, then rinsing the wafer with flowing ultra pure water for 10 min, followed by spin-drying.
  • a wafer was divided into two halves, and a thickness of metallic Cu film was measured by observing the cross section thereof using an electron microscope.
  • a wafer was divided into two halves, and thickness of a Cu-BTA film was measured by observing the cross section thereof using a SEM (a scanning electron microscope).
  • Metals (Fe, Al and Cu) adsorbed and remaining on the wafer surface were dissolved with an aqueous solution of hydrofluoric acid and nitric acid and recovered, then metal concentration in said recovered solution was measured by an atomic absorption spectrometry (a graphite furnace atomic absorption spectrometer). Adsorption amounts (remaining metal concentrations) of metal atoms (Fe atom, Al atom and Cu atom) were calculated based on the measured values obtained.
  • Particles adsorbed and remaining on the wafer surface were measured using a surface foreign material inspection apparatus (a particle counter).
  • a wafer contaminated with a carbon defect, a wafer provided with a Cu-BTA film and a metallic Cu deposited wafer were treated in the same manner as in Examples 1 to 44 except that various solutions described in Table 2 were used, thereafter similar measurement and evaluation to those in Examples 1 to 44 were carried out on each of these wafers.
  • Each of the wafers contaminated with metals prepared by the above-described method was dipped in 1 L each of cleaning agents described in Table 4, at room temperature for 1 hour. Thereafter, the wafer was taken out, rinsed with ultra pure water for 10 min, and spin-dried.
  • the wafers contaminated with metals were treated in the similar way as in Examples 45 to 76 except for using various solutions described in Table 5. Thereafter, the same measurement and evaluation as in Examples 45 to 76 were carried out for the wafers contaminated with metals.
  • the cleaning agent according to the present invention can not only well remove a carbon defect remaining on a surface of substrate, but also effectively remove impurities derived from various kinds of metals (metallic impurities) at the same time.
  • the wafers contaminated with metals prepared by the above method were subjected to a brush scrub cleaning using a brush made of poly(vinyl alcohol), while each of the cleaning agents described in Table 6 was sprayed on a surface of said wafers.
  • the treatment temperature was 25° C., and cleaning time was 1 min. After cleaning, the wafers were rinsed with ultra pure water for 10 min, and spin-dried.
  • the wafers contaminated with metals were treated in the similar way as in Examples 77 to 108 except for using various solutions described in Table 7. Thereafter, the same measurement and evaluation as in Examples 77 to 108 were carried out for the wafers contaminated with metals.
  • the wafer contaminated with particles prepared by the above-described method was dipped in 1 L each of cleaning agents described in Table 8, at room temperature for 5 hours. Thereafter, said wafer was taken out, rinsed with ultra pure water for 10 mins, and spin-dried.
  • the wafers contaminated with particles were treated in the similar way as in Examples 109 to 140 except for using various solutions described in Table 9. Thereafter, the same measurement and evaluation as in Examples 109 to 140 were carried out for the wafers contaminated with particles.
  • the cleaning agent according to the present invention can not only well remove a carbon defect remaining on a surface of substrate, but also effectively remove fine particles (particles) present on a surface of substrate as well as impurities derived from various kinds of metals (metallic impurities) at the same time.
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Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070093065A1 (en) * 2005-10-25 2007-04-26 Oki Electric Industry Co., Ltd. Method for manufacturing a semiconductor wafer
US20070161243A1 (en) * 2004-03-30 2007-07-12 Basf Aktiengesellschaft Aqueous solution for removing post-etch residue
US20070167017A1 (en) * 1998-12-28 2007-07-19 Takeshi Uchida Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
US20080173328A1 (en) * 2006-09-11 2008-07-24 Fujifilm Corporation Cleaning liquid and cleaning method using the same
US20090065735A1 (en) * 2006-06-09 2009-03-12 Artur Kolics Cleaning solution formulations for substrates
US20090072190A1 (en) * 2006-06-09 2009-03-19 Artur Kolics Cleaning solution formulations for substrates
US20090162537A1 (en) * 2007-12-21 2009-06-25 Artur Kolics Post-deposition cleaning methods and formulations for substrates with cap layers
US20090229629A1 (en) * 2008-03-14 2009-09-17 Air Products And Chemicals, Inc. Stripper For Copper/Low k BEOL Clean
US20090257947A1 (en) * 2008-04-09 2009-10-15 Tsinghua University Method of manufacturing zinc aluminate nano-material
US20090312228A1 (en) * 2008-06-11 2009-12-17 Katie Bocage Aqueous cleaning concentrates
US20100093585A1 (en) * 2006-02-16 2010-04-15 Nobuyuki Kurashima Post-cmp treating liquid and manufacturing method of semiconductor device using the same
US20100167535A1 (en) * 2008-12-26 2010-07-01 Fujifilm Corporation Cleaning agent for semiconductor device and method for producing semiconductor device using the cleaning agent
US20100197136A1 (en) * 2007-07-26 2010-08-05 Mitsubishi Gas Chemical Company, Inc. Composition for cleaning and rust prevention and process for producing semiconductor element or display element
US20100294307A1 (en) * 2006-05-08 2010-11-25 Ecolab Inc. Acidic cleaner for metal surfaces
CN101912857A (zh) * 2010-07-21 2010-12-15 河北工业大学 锑化铟晶片碱性化学机械抛光后的表面洁净方法
US20110021400A1 (en) * 2008-03-07 2011-01-27 Wako Pure Chemical Industries, Ltd. Semiconductor surface treating agent composition and method for treating semiconductor surface using the semiconductor surface treating agent composition
US20120094886A1 (en) * 2009-06-30 2012-04-19 Basf Se Aqueous alkaline cleaning compositions and methods of their use
US20120090646A1 (en) * 2009-09-03 2012-04-19 Arakawa Chemical Industries, Ltd. Cleaning agent for removal of, removal method for, and cleaning method for water-soluble, lead-free solder flux
US20120167916A1 (en) * 2009-10-08 2012-07-05 C. Uyemura & Co., Ltd. Neutralizing/reducing agent, and desmear method
US20130231271A1 (en) * 2010-09-03 2013-09-05 Kanto Kagaku Kabushiki Kaisha Photoresist residue and polymer residue removing liquid composition
US20140303058A1 (en) * 2011-11-23 2014-10-09 Kukdong Jeyen Company Limited Vehicle-glass cleaning fluid composition comprising anionic surfactant and tartaric acid
US20150133356A1 (en) * 2011-11-08 2015-05-14 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US9562211B2 (en) 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US9834746B2 (en) 2013-10-21 2017-12-05 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations for removing residues on surfaces
US9862914B2 (en) 2013-11-08 2018-01-09 Wako Pure Chemical Industries, Ltd. Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
US11407966B2 (en) 2018-03-28 2022-08-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
US11840649B2 (en) 2018-11-07 2023-12-12 Eastman Performance Films, Llc Tack solutions and their use in applying films to substrates

Families Citing this family (63)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20080027244A (ko) * 2005-05-13 2008-03-26 사켐,인코포레이티드 산화물의 선택적 습식 에칭
JP5113337B2 (ja) * 2006-02-24 2013-01-09 前田工繊株式会社 繊維布材の洗浄方法
US20070228011A1 (en) * 2006-03-31 2007-10-04 Buehler Mark F Novel chemical composition to reduce defects
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JP5813280B2 (ja) * 2008-03-19 2015-11-17 富士フイルム株式会社 半導体デバイス用洗浄液、および洗浄方法
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JP2011105824A (ja) * 2009-11-16 2011-06-02 Dai Ichi Kogyo Seiyaku Co Ltd 硬質表面用洗浄剤組成物
WO2011145904A2 (ko) * 2010-05-19 2011-11-24 Oh Mi Hye 연소기관 효율개선용 세정제
KR101936956B1 (ko) * 2010-06-11 2019-01-09 동우 화인켐 주식회사 세정액 조성물
CN102343352B (zh) * 2010-07-26 2014-03-12 比亚迪股份有限公司 一种太阳能硅片的回收方法
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JP5623318B2 (ja) * 2011-03-24 2014-11-12 第一工業製薬株式会社 精密部品用洗浄剤組成物
KR102009883B1 (ko) * 2011-08-04 2019-10-22 엘지디스플레이 주식회사 표시모듈 세정장치 및 세정방법
TWI449783B (zh) * 2011-08-19 2014-08-21 Chi Mei Cooperation Ltd 洗淨液組成物及基板之洗淨方法
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KR101966635B1 (ko) * 2012-04-27 2019-08-27 후지 필름 일렉트로닉 머트리얼즈 가부시키가이샤 반도체 기판용 세정제 및 반도체 기판 표면의 처리방법
CN103484261B (zh) * 2012-06-13 2015-01-28 浙江瑞翌新材料科技有限公司 一种太阳能硅片清洗剂
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WO2014013902A1 (ja) 2012-07-19 2014-01-23 日産化学工業株式会社 半導体用洗浄液及びそれを用いた洗浄方法
TWI561615B (en) * 2012-07-24 2016-12-11 Ltc Co Ltd Composition for removal and prevention of formation of oxide on surface of metal wiring
CN103146246B (zh) * 2013-04-03 2014-12-24 东莞市剑鑫电子材料有限公司 水基酸性五金油墨清洗剂及其制备、使用方法
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JP6421751B2 (ja) * 2013-07-05 2018-11-14 富士フイルム和光純薬株式会社 エッチング剤、エッチング方法およびエッチング剤調製液
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CN103451666A (zh) * 2013-09-16 2013-12-18 杨震宇 一种金属清洗剂
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CN103710161B (zh) * 2013-12-31 2015-12-02 上海交通大学 一种去除重垢和油污的清洗剂
CN103757648B (zh) * 2014-01-16 2016-03-30 段云豪 一种手机表面铜锈的去除及防护剂
CN104946429A (zh) * 2014-03-26 2015-09-30 安集微电子科技(上海)有限公司 一种低蚀刻的去除光阻蚀刻残留物的清洗液
JP6343160B2 (ja) 2014-03-28 2018-06-13 株式会社フジミインコーポレーテッド 研磨用組成物
JP6260441B2 (ja) * 2014-04-30 2018-01-17 旭硝子株式会社 樹脂層の除去方法
CN104560459A (zh) * 2015-01-19 2015-04-29 通山瑞邦电子科技有限公司 一种多层板膨松剂及其制备方法
CN104845768B (zh) * 2015-05-12 2017-12-05 深圳市美克科技有限公司 一种线路板用中性水基清洗剂组合物
CN106929867A (zh) * 2015-12-31 2017-07-07 安集微电子（上海）有限公司 一种用于金属基板抛光后的清洗液及其使用方法
CN106929868A (zh) * 2015-12-31 2017-07-07 安集微电子科技(上海)有限公司 一种用于金属基板抛光后的清洗液及其使用方法
KR102412268B1 (ko) * 2016-01-26 2022-06-23 동우 화인켐 주식회사 표시장치용 어레이 기판의 제조방법
KR102341136B1 (ko) * 2016-07-26 2021-12-21 가부시키가이샤 후지미인코퍼레이티드 표면 처리 조성물 및 이것을 사용한 표면 처리 방법
WO2018021038A1 (ja) * 2016-07-29 2018-02-01 富士フイルム株式会社 処理液及び基板洗浄方法
CN106350296B (zh) * 2016-08-25 2018-10-23 大连奥首科技有限公司 一种高效环保led芯片清洗剂及使用方法
CN106269726B (zh) * 2016-09-13 2018-09-04 内蒙古蒙牛乳业（集团）股份有限公司 清洗蒸发光散射检测器漂移管的方法
CN106544189A (zh) * 2016-10-12 2017-03-29 易洁(北京)科技有限公司 一种玻璃水制作工艺
CN106867717A (zh) * 2016-12-29 2017-06-20 芜湖乐普汽车科技有限公司 玻璃基板清洗剂
CN106753844A (zh) * 2016-12-29 2017-05-31 芜湖乐普汽车科技有限公司 玻璃基板清洗剂的制备方法
CN106867694A (zh) * 2016-12-29 2017-06-20 芜湖乐普汽车科技有限公司 玻璃基板的清洗方法
TW201831667A (zh) * 2017-01-13 2018-09-01 日商富士軟片股份有限公司 試劑盒、半導體元件的製造方法及半導體元件的基板的清洗方法
CN107118874A (zh) * 2017-05-25 2017-09-01 滕晓明 一种多功能清洗剂
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US11060051B2 (en) * 2018-10-12 2021-07-13 Fujimi Incorporated Composition for rinsing or cleaning a surface with ceria particles adhered
KR20200077912A (ko) 2018-12-21 2020-07-01 주식회사 케이씨텍 세정액 조성물 및 그것을 이용한 세정 방법
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KR101988481B1 (ko) * 2019-03-19 2019-06-12 제이엘켐 주식회사 반도체 기판용 세정액
JPWO2021230026A1 (ko) 2020-05-11 2021-11-18
CN111744870A (zh) * 2020-06-24 2020-10-09 中国科学院苏州纳米技术与纳米仿生研究所广东(佛山)研究院 一种半导体器件金锡焊接后的清洗方法
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CN113512728A (zh) * 2021-06-25 2021-10-19 深圳市恒纬祥科技有限公司 一种除6系铝合金表面二氧化硅研磨液的清洗剂
KR102648808B1 (ko) * 2021-07-14 2024-03-20 주식회사 케이씨텍 Cmp 후 세정액 조성물
WO2023096862A1 (en) * 2021-11-23 2023-06-01 Entegris, Inc. Microelectronic device cleaning composition
CN114806748A (zh) * 2022-05-27 2022-07-29 上海皇晶生物科技有限公司 一种抛光蜡膜用清洗剂及其制备方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010018407A1 (en) * 1996-06-05 2001-08-30 Wako Pure Chemical Industries, Ltd. Cleaning agent
US20020169088A1 (en) * 1999-09-27 2002-11-14 Shumin Wang Cleaning solution for semiconductor surfaces following chemical-mechanical polishing
US20030083214A1 (en) * 2000-03-21 2003-05-01 Masahiko Kakizawa Semiconductor wafer cleaning agent and cleaning method
US20030181344A1 (en) * 2002-03-12 2003-09-25 Kazuto Ikemoto Photoresist stripping composition and cleaning composition
US20030199406A1 (en) * 2002-02-06 2003-10-23 Shipley Company, L.L.C. Cleaning composition
US20040106531A1 (en) * 2002-07-12 2004-06-03 Renesas Technology Corp. Cleaning composition for removing resists and method of manufacturing semiconductor device
US20040116313A1 (en) * 2002-12-02 2004-06-17 Martin Nosowitz Composition and method for copper chemical mechanical planarization

Family Cites Families (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04130100A (ja) * 1990-09-21 1992-05-01 Nippon Steel Corp 半導体ウェハのエッチング方法および洗浄方法
US6492311B2 (en) * 1990-11-05 2002-12-10 Ekc Technology, Inc. Ethyenediaminetetraacetic acid or its ammonium salt semiconductor process residue removal composition and process
JPH0779061A (ja) 1993-09-07 1995-03-20 Mec Kk 銅および銅合金の表面処理剤
TW263534B (ko) * 1993-08-11 1995-11-21 Makkusu Kk
DE4338626A1 (de) * 1993-11-12 1995-05-18 Henkel Kgaa Additiv für die Glasflaschenreinigung und seine Verwendung zur Verringerung der Glaskorrosion
TW416987B (en) * 1996-06-05 2001-01-01 Wako Pure Chem Ind Ltd A composition for cleaning the semiconductor substrate surface
JP3219020B2 (ja) * 1996-06-05 2001-10-15 和光純薬工業株式会社 洗浄処理剤
JP3755776B2 (ja) 1996-07-11 2006-03-15 東京応化工業株式会社 リソグラフィー用リンス液組成物及びそれを用いた基板の処理方法
US6755989B2 (en) * 1997-01-09 2004-06-29 Advanced Technology Materials, Inc. Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
JPH11286794A (ja) * 1998-02-05 1999-10-19 Mitsubishi Electric Corp 銅または銅合金材料の表面処理方法
JP4308959B2 (ja) 1998-02-27 2009-08-05 関東化学株式会社 フォトレジスト剥離液組成物
US6231677B1 (en) * 1998-02-27 2001-05-15 Kanto Kagaku Kabushiki Kaisha Photoresist stripping liquid composition
CN100370360C (zh) 1998-05-18 2008-02-20 马林克罗特有限公司 用于清洗微电子衬底的含硅酸盐碱性组合物
US6828289B2 (en) * 1999-01-27 2004-12-07 Air Products And Chemicals, Inc. Low surface tension, low viscosity, aqueous, acidic compositions containing fluoride and organic, polar solvents for removal of photoresist and organic and inorganic etch residues at room temperature
US5998358A (en) 1999-03-23 1999-12-07 Ecolab Inc. Antimicrobial acid cleaner for use on organic or food soil
JP4516176B2 (ja) * 1999-04-20 2010-08-04 関東化学株式会社 電子材料用基板洗浄液
US7208049B2 (en) * 2003-10-20 2007-04-24 Air Products And Chemicals, Inc. Process solutions containing surfactants used as post-chemical mechanical planarization treatment
US6346217B1 (en) 1999-06-02 2002-02-12 Water Whole International, Inc. Composition and method for cleaning drink water tanks
US6562726B1 (en) * 1999-06-29 2003-05-13 Micron Technology, Inc. Acid blend for removing etch residue
US7396806B2 (en) * 2000-06-16 2008-07-08 Kao Corporation Semiconductor cleaner comprising a reducing agent, dispersant, and phosphonic acid-based chelant
JP2002020787A (ja) 2000-07-05 2002-01-23 Wako Pure Chem Ind Ltd 銅配線半導体基板洗浄剤
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
US6740591B1 (en) * 2000-11-16 2004-05-25 Intel Corporation Slurry and method for chemical mechanical polishing of copper
JP4689855B2 (ja) * 2001-03-23 2011-05-25 イーケーシー テクノロジー，インコーポレイティド 残渣剥離剤組成物およびその使用方法
JP2003013266A (ja) * 2001-06-28 2003-01-15 Wako Pure Chem Ind Ltd 基板洗浄剤
US6866792B2 (en) * 2001-12-12 2005-03-15 Ekc Technology, Inc. Compositions for chemical mechanical planarization of copper
JP4304988B2 (ja) * 2002-01-28 2009-07-29 三菱化学株式会社 半導体デバイス用基板の洗浄方法
WO2003079429A1 (en) * 2002-03-15 2003-09-25 Renesas Technology Corp. Production method for semiconductor integrated circuit device
JP4159334B2 (ja) 2002-09-30 2008-10-01 新日本製鐵株式会社 チタンおよびチタン合金建材用の変色除去洗浄剤、および変色除去洗浄方法
DE60323148D1 (de) * 2002-10-22 2008-10-02 Ekc Technology Inc Wässrige phosphorsäurezusammensetzung zur reinigung von halbleiter-vorrichtungen
JP2004152925A (ja) * 2002-10-30 2004-05-27 Sony Corp 洗浄方法

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010018407A1 (en) * 1996-06-05 2001-08-30 Wako Pure Chemical Industries, Ltd. Cleaning agent
US20020169088A1 (en) * 1999-09-27 2002-11-14 Shumin Wang Cleaning solution for semiconductor surfaces following chemical-mechanical polishing
US20030083214A1 (en) * 2000-03-21 2003-05-01 Masahiko Kakizawa Semiconductor wafer cleaning agent and cleaning method
US20030199406A1 (en) * 2002-02-06 2003-10-23 Shipley Company, L.L.C. Cleaning composition
US20030181344A1 (en) * 2002-03-12 2003-09-25 Kazuto Ikemoto Photoresist stripping composition and cleaning composition
US20040106531A1 (en) * 2002-07-12 2004-06-03 Renesas Technology Corp. Cleaning composition for removing resists and method of manufacturing semiconductor device
US20040116313A1 (en) * 2002-12-02 2004-06-17 Martin Nosowitz Composition and method for copper chemical mechanical planarization

Cited By (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070167017A1 (en) * 1998-12-28 2007-07-19 Takeshi Uchida Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
US7799686B2 (en) * 1998-12-28 2010-09-21 Hitachi, Ltd. Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
US20070161243A1 (en) * 2004-03-30 2007-07-12 Basf Aktiengesellschaft Aqueous solution for removing post-etch residue
US7919445B2 (en) * 2004-03-30 2011-04-05 Basf Aktiengesellschaft Aqueous solution for removing post-etch residue
US20070093065A1 (en) * 2005-10-25 2007-04-26 Oki Electric Industry Co., Ltd. Method for manufacturing a semiconductor wafer
US20100093585A1 (en) * 2006-02-16 2010-04-15 Nobuyuki Kurashima Post-cmp treating liquid and manufacturing method of semiconductor device using the same
US8921298B2 (en) * 2006-05-08 2014-12-30 Ecolab Usa Inc. Acidic cleaner for metal surfaces
US20100294307A1 (en) * 2006-05-08 2010-11-25 Ecolab Inc. Acidic cleaner for metal surfaces
US20090065735A1 (en) * 2006-06-09 2009-03-12 Artur Kolics Cleaning solution formulations for substrates
US9058975B2 (en) 2006-06-09 2015-06-16 Lam Research Corporation Cleaning solution formulations for substrates
US9406556B2 (en) * 2006-06-09 2016-08-02 Lam Research Corporation Method of making an interconnect device
US20090072190A1 (en) * 2006-06-09 2009-03-19 Artur Kolics Cleaning solution formulations for substrates
US20140099789A1 (en) * 2006-06-09 2014-04-10 Lam Research Corporation Method of making an interconnect device
US20080173328A1 (en) * 2006-09-11 2008-07-24 Fujifilm Corporation Cleaning liquid and cleaning method using the same
US7851426B2 (en) * 2006-09-11 2010-12-14 Fujifilm Corporation Cleaning liquid and cleaning method using the same
US8802608B2 (en) * 2007-07-26 2014-08-12 Mitsubishi Gas Chemical Comany, Inc. Composition for cleaning and rust prevention and process for producing semiconductor element or display element
US20100197136A1 (en) * 2007-07-26 2010-08-05 Mitsubishi Gas Chemical Company, Inc. Composition for cleaning and rust prevention and process for producing semiconductor element or display element
US8790465B2 (en) 2007-12-21 2014-07-29 Lam Research Corporation Post-deposition cleaning methods for substrates with cap layers
US20090162537A1 (en) * 2007-12-21 2009-06-25 Artur Kolics Post-deposition cleaning methods and formulations for substrates with cap layers
US8404626B2 (en) 2007-12-21 2013-03-26 Lam Research Corporation Post-deposition cleaning methods and formulations for substrates with cap layers
US20110021400A1 (en) * 2008-03-07 2011-01-27 Wako Pure Chemical Industries, Ltd. Semiconductor surface treating agent composition and method for treating semiconductor surface using the semiconductor surface treating agent composition
US8828918B2 (en) * 2008-03-07 2014-09-09 Wako Pure Chemical Industries, Ltd. Semiconductor surface treating agent composition and method for treating semiconductor surface using the semiconductor surface treating agent composition
US20090229629A1 (en) * 2008-03-14 2009-09-17 Air Products And Chemicals, Inc. Stripper For Copper/Low k BEOL Clean
US20090257947A1 (en) * 2008-04-09 2009-10-15 Tsinghua University Method of manufacturing zinc aluminate nano-material
US20090312228A1 (en) * 2008-06-11 2009-12-17 Katie Bocage Aqueous cleaning concentrates
TWI468509B (zh) * 2008-12-26 2015-01-11 Fujifilm Corp 半導體元件用清潔劑及使用其之半導體元件之製造方法
US20100167535A1 (en) * 2008-12-26 2010-07-01 Fujifilm Corporation Cleaning agent for semiconductor device and method for producing semiconductor device using the cleaning agent
US20120094886A1 (en) * 2009-06-30 2012-04-19 Basf Se Aqueous alkaline cleaning compositions and methods of their use
US8969275B2 (en) * 2009-06-30 2015-03-03 Basf Se Aqueous alkaline cleaning compositions and methods of their use
US20120090646A1 (en) * 2009-09-03 2012-04-19 Arakawa Chemical Industries, Ltd. Cleaning agent for removal of, removal method for, and cleaning method for water-soluble, lead-free solder flux
US8877697B2 (en) * 2009-09-03 2014-11-04 Arakawa Chemical Industries, Ltd. Cleaning agent for removal of, removal method for, and cleaning method for water-soluble, lead-free solder flux
US20120167916A1 (en) * 2009-10-08 2012-07-05 C. Uyemura & Co., Ltd. Neutralizing/reducing agent, and desmear method
CN101912857A (zh) * 2010-07-21 2010-12-15 河北工业大学 锑化铟晶片碱性化学机械抛光后的表面洁净方法
US20130231271A1 (en) * 2010-09-03 2013-09-05 Kanto Kagaku Kabushiki Kaisha Photoresist residue and polymer residue removing liquid composition
US20150133356A1 (en) * 2011-11-08 2015-05-14 Dynaloy, Llc Photoresist and post etch residue cleaning solution
US20140303058A1 (en) * 2011-11-23 2014-10-09 Kukdong Jeyen Company Limited Vehicle-glass cleaning fluid composition comprising anionic surfactant and tartaric acid
US9365804B2 (en) * 2011-11-23 2016-06-14 Kukdong Jeyen Company Limited Vehicle-glass cleaning fluid composition comprising anionic surfactant and tartaric acid
US9834746B2 (en) 2013-10-21 2017-12-05 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulations for removing residues on surfaces
US9862914B2 (en) 2013-11-08 2018-01-09 Wako Pure Chemical Industries, Ltd. Cleaning agent for semiconductor substrates and method for processing semiconductor substrate surface
US9562211B2 (en) 2013-12-06 2017-02-07 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10253282B2 (en) 2013-12-06 2019-04-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10415005B2 (en) 2013-12-06 2019-09-17 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10696933B2 (en) 2013-12-06 2020-06-30 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US10927329B2 (en) 2013-12-06 2021-02-23 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11286444B2 (en) 2013-12-06 2022-03-29 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11401487B2 (en) 2013-12-06 2022-08-02 Fujifilm Electronics Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11618867B2 (en) 2013-12-06 2023-04-04 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11639487B2 (en) 2013-12-06 2023-05-02 Fujifilm Electronic Materials U.S.A., Inc. Cleaning formulation for removing residues on surfaces
US11407966B2 (en) 2018-03-28 2022-08-09 Fujifilm Electronic Materials U.S.A., Inc. Cleaning compositions
US11840649B2 (en) 2018-11-07 2023-12-12 Eastman Performance Films, Llc Tack solutions and their use in applying films to substrates

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US8900371B2 (en) 2014-12-02
JP5392881B2 (ja) 2014-01-22
EP1679361A1 (en) 2006-07-12
EP1679361B1 (en) 2015-06-24
US20120000485A1 (en) 2012-01-05
CN100543124C (zh) 2009-09-23
KR101047974B1 (ko) 2011-07-13
CN1875090A (zh) 2006-12-06
IL174877A0 (en) 2006-08-20
WO2005040324A1 (ja) 2005-05-06

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