TWM382576U - Leadless integrated circuit package having high density contacts - Google Patents

Leadless integrated circuit package having high density contacts Download PDF

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Publication number
TWM382576U
TWM382576U TW098210112U TW98210112U TWM382576U TW M382576 U TWM382576 U TW M382576U TW 098210112 U TW098210112 U TW 098210112U TW 98210112 U TW98210112 U TW 98210112U TW M382576 U TWM382576 U TW M382576U
Authority
TW
Taiwan
Prior art keywords
metal
zone
contact
integrated circuit
wafer
Prior art date
Application number
TW098210112U
Other languages
English (en)
Inventor
Tung-Lok Li
Original Assignee
Kaixin Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaixin Inc filed Critical Kaixin Inc
Publication of TWM382576U publication Critical patent/TWM382576U/zh

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    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
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    • H01L21/4814—Conductive parts
    • H01L21/4821—Flat leads, e.g. lead frames with or without insulating supports
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    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15182—Fan-in arrangement of the internal vias
    • H01L2924/15183—Fan-in arrangement of the internal vias in a single layer of the multilayer substrate
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    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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    • H01L2924/181—Encapsulation
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    • H01L2924/19043—Component type being a resistor

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Description

M382576
五、新型說明： 【相關申請案的交叉引用】 本申請要求享有於2009年3月6日提交的申請號為61/158,170和2009 年4月3曰提交的申請號為61/166,547的美國臨時專利申請的優先權，兩 者的全文通過引用而結合於此。 【新型所屬之技術領域】 本創作涉及積體電路封裝技術’更具體地說，但不僅僅是，具有更高 密度的接點和晶粒粘貼墊的無引腳積體電路元件。 【先前技術】 背景技術 積體電路（Integrated circuit, 1C)封裝是1C元件生產過程中的最後幾個 步驟之一。在1C封裝過程中，一個或多個IC晶片被貼在一個封裝基板上， .並與電接點連接’錢又被蓋上—層由電絕緣磐（如：環氧或有機石夕模 鲁塑，封料）構成的封裝材最終成型的形狀就是我們通常所說的“忙封裝元 件’’ ’其可以被安裝到印刷電路板（Printedcircuitb〇 c 他電氣元件連接。 π辦具 在大多數的1C封裝元件中，IC晶片被成型材料完全覆蓋，而電接點合 f少，外露’以便它們能被賴到其他電子元件上。換句話說，電“ =用來在ic元件内部# IC晶片和IC元件外觸電子元件之間形成電連 封針最具有成本效益賴法是：用㈣引雜來储層顯或膠 :金屬引線框伽了比層料成本更低_、鎳 '其f t 用的衝她刻工藝的成本也比多刪工藝的成本要低 計方故：從成型材料的四周延伸出“引腳，，。這些⑽ W向下彎曲，顧可在_電職上與電子元件連接起來。 · . *··»- *·· * (Wf1奢正 年月日屮 補无 M382576 Γ 外 _存在會使IC封裝元件的尺寸增大。例如.常 节由^丨腳的橫向延伸而增大了 IC封裝元件 ⑽空間有剛絲說是不。另外，由於外利腳常^ 70件的四顯列’所以ic封裝元件㈣腳數會受到IC封裝^四周的直 =限不利之處是’這些引腳還要求額外的檢查步驟來判 Z新ί工尺寸要求（如果檢查專案達不到規格的要求，就 應重新加工或廢棄）。最終，引腳（從焊接指到外部頂端）長度 號的總長度中（焊線長度+引腳長度），從而影響IC晶片的電氣性能。- 一封裝元件中出現的這些問題後，我們的研究人員設計出 -種，的縣方法’即：^電接點代斜部5|腳，且ic職元件正面 接2疋被封裝材料蓋住的，而底面的接點卻外露出來。這樣便可使這些接 點與位於IC封裝元件下方的電子元件連接起來。這些ic封裝元件（⑽ ，=無引腳” IC封裝元件）跟傳統的IC封裝元件相比，由於外部引腳“ =在了較少的，。糾，再也不需要通料曲⑽來形成 。封ί ΓΓ=獅177的崎物公__的“無引 封裝4，在這畏作為參考。除其他外，這 ^腳IC難树喊計敎及觀和朗該無⑽ic聽元件的各^ 技術。 圖1A和圖1B是無引㈣封裝件的一個實例。圖ia是一個ic封裝 j 的仰視圖’其擁有-個頂部表面安裝了一塊ic晶片ι〇4 (圖认 虛線所示）的晶絲貼墊（Die attach pad，DAp) 1〇2。可以看到多個接點 1〇6被佈置在湖02的周邊。在將Ic封裝元件1〇〇安裝到pcB上時接 點106可以用來在ic晶片104和PCB之間形成電連接。d洲2和大量接 點 '之間可洗注-層封裝材料1〇8，例如，用來隔離接點ι〇6與d侧2。 圖疋圖1A中IC封裝凡件1〇0在Α·Α線處的剖面圖°IC晶片104可通 過導電銀膠u㈣在驗1〇2上。引線112可用於在ic晶片1〇4和多個焊 點Μ之間于端點處形成電連接，端點與驗1〇2電隔離。引線ιΐ4可用 於在1C晶片104和多個焊點118之間形成電連接焊點118未與驗1〇2 電隔離。由於無106與贈102是隔離開的，接點106可以用來在印刷 M382576 正 if I "if 電路板（圖中未顯示）和IC晶片104上的輸入/輸出(I Jo)埠30¾}傳遞作 號。由於DAP的焊點118未與DAP102隔離開，這些電連接只能用於在IC 晶片104的電接地功能。 這種1C封裝元件的一個局限之處是：可用來在忙晶片"ο埠傳遞電信 號的端點的最大數量受到DAp四周可排布的端點數的限制。如圖2所示， 人們嘗試通過減少端點的間距來在DAp四周排布更多的端點，以及增加 DAP四周可排布端點的行數，以便增加能夠與IC晶片的1/〇槔建立電連接 的端點數量。然而，增加端點的行數需要通過減少IC晶片的尺寸或增加ic 封裝元件的尺寸來貫現《此外，端點間距離能夠被縮減的量仍然受到peg 上連接點的間距的限制，而PCB上連接點的間距是比較大的。 【新型内容】 本申請案公開够種實施例是减接點密度更高的無引腳積體電路及 其製造方法。在-實施例巾，—種無引腳積體電路元件，包括金屬引線框； 所述金屬引線框有頂面和底面，並包括大量從頂面延伸到底面的端點，每 個所述端點都包括位於卿表面的焊接區、位於底_接點區和一連接兩 者的金屬軌跡線；所述無引腳積體電路元件還包括忙晶片；所述冗曰片 =^金屬引線框的頂面，並包括大量焊接盤；所述無引腳積體電路^件 匕大量引、線，所述母根引線都與一焊接區及一 路元件還包括封裝材料；其覆蓋所述IC晶片、所述大量引 述大篁Μ點中每個端點的至少—部分；其賴在於，所述大量端點 裝材料完全封裝；所述大量端財至少有—個端點包括電連接 焊接區的金;|軌猶’鱗接區從接點區橫向延伸；因此科需要與金 屬引線框頂面垂直的導線來連接焊接區和接 ”丄 對燁接區和接點區進行電連接。純彳接點Q ’而疋通過金屬軌跡線來 點區’所_丨職體電路树可能包括接點區，所述接 位於1c “周邊的焊舰之_成電連接；該無 延伸來焊接區是以下列方式中的一種或多種方=現 曰曰片，從接點區向外排布；相對於Ic晶片從接點區向内 M382576 mu
排布；排布在與IC晶片邊緣平行的位置。___ 量端點中 在某些實施例中，所述大量端點中第一端5^^·大 端、Γΐ區財心距小於所述第一端點接點區和所述第二端點接點區 第-胁在某些實施例中，無引腳積體電路元件包括所述大量端點中的 點；所述第-端點有—連接到第—接點區的第—焊接區，所述接點 二4於其底面；該無引腳積體電路元件還包括所述大量端點中的第二 =二第二端點有一連接到第二接點區的第二焊，所述接點區直 2於底及所述大量端財㈣三端點；所述第三端點有一連接 至笛!第^接縣㈣三焊接區；其概在於，第三焊接區位于第—焊接區和 接區之間；並且所述第三接點區從第—接點11和第二接點區之間的 £域4頁向延伸。其他一些實施例中’可能還包括所述大量端點中的第四端 點，所述第四端點有一連接到第四接點區的第四焊接區；其特徵在於，所 ^第四谭接區位于第-焊舰和第二焊之間；並且所述第四接點區從 弟一接點區和第二接點區之間的區域橫向延伸。 在某些實施例中，無引腳積體電路元件，可能包括：所述大量端點中 的第一端點；所述第一端點有一第一接點區；所述大量端點中的第二端點·， 所述第二端點有一與第一接點區鄰近的第二接點區；以及所述大量端點中 的第三端點；所述第三端點有一從第一接點區延伸到第二接點區的金屬軌 跡線。在某些實施例中，所述金屬引線框的底面被選擇性蝕刻，從而使金 屬引線框底面與封裝材料底面大致貼合；和/或所述金屬引線框的底面被選 擇性蝕刻，從而使金屬引線框底面的至少一部分與封裝材料底面大致貼 合。在某些實施例中，所述的無引腳積體電路元件包括，所述金屬引線框 的底面被選擇性蝕刻’從而使金屬引線框位於封裝材料内部的至少一部分 被移除；和/或所述金屬軌跡線的底面被選擇性蝕刻，從而使金屬軌跡線位 於封裝材料内部的至少一部分被移除。 在某些實施例中，所述的無引腳積體電路元件進一步包括一金屬鍵 層；所述金屬鍍層位於所述焊接區中至少一個的頂面；並且其特徵在於， 金屬引線框位於金屬鍍層下的至少一部分被蝕刻移除。在某些實施例中， 所有的位於金屬鍍層下的金屬引線框被充分地蝕刻移除。在某些實施例 中’所述第大量焊接區中的第一焊接區的寬度小於5密耳；所述第一焊接 申年1:月21曰修旧 领无 M382576 ，區邊緣和第二焊接區邊緣之間的距離小於5密耳；和/或所述至少—個金屬 執跡線的底面塗有一層保護材料；所述保護材料為銀膠、氧化物或阻焊劑。 在某些實施例中，所述的無引腳積體電路元件，包括：在接點區底面 形成的可焊錫保護層；其特徵在於，所述可焊錫保護層從以下幾組中選取· 鎳、鈀和金的電鍍疊層；鎳和金的電鍍疊層；鎳和銀的電鍍疊層；銀、金 或鎳和金的金屬鍍層；錫的電鍍層或置換鍍層；由錫和鉛組成的焊料塗層， 或錫合金焊料；由錫和鉛組成的焊球，或錫合金焊料；以及具有有機可焊 性防腐劑塗層的裸銅。在某些實施例中，所述金屬引線框的頂面包括晶粒 粘貼墊；且至少一部分IC晶片被安裝在晶粒粘貼墊上。在某些實施例中， 所述無引腳電路元件包括安裝到所述1(：晶片上，並與 接的-個或多個1C晶片。 t 在某些實施例中，一種製造無引腳積體電路元件的方法，包括：對金 屬引線框_面部分侧以在内部職凹槽；所述喃定義了大量金屬軌 跡線的上部’所述大量金屬執跡線中的每個金屬軌跡線都有—位於立上部 ^焊接區；在金屬⑽框上安裝—IC晶片；通過引線對IC晶片和焊舰 ;應用成型材料覆蓋1c晶片、5丨線和大量金屬執跡線並填充金 2線框的凹槽；對金屬引線框的底面進行選擇性地蝴來使所述大量金 每個金屬軌跡線彼關隔開，所収4金魏跡射的每個 金屬執跡線有-位於其下表面的接點區，並且沒有被封裝 =少一個所述金屬軌跡、線包括從焊接區橫:延伸的接 一屬錄框頂面的導絲連接接繩和焊接區。 在某二實_巾，所蘭製造無引腳職電路元件的方法，可能包括· 所述金屬軌跡線下表面的至少—邮八祕_辦的方法，可此包括. 合。在某轉㈣φ π 。卩刀祕刻掉，叫分與封裝層的底面貼 將所述金屬執跡線下表面的至 ：巧的方法可識. 述的製造無引腳積體電路元件^;，^ 2層2某些實施例中，所 層中中抗氧化塗層、環氧樹脂塗層和保=層_下塗 所二===電路元件的方法，可能包括: 合。在_例中，製 M382576 i ‘ 2 1修正 …^ ... · . _年月日補充 片被女裝在金屬引線4的晶粒粘貼區^;所述晶粒粘貼區與封裝層底面之 間構成第一距離，所述接點區與成型層的底面構成第二距離；且 距離小於第二距離。 在某些實施例中，在所述封裝材料的内部，至少一個所述金屬執跡線 下底面的至少一部分被蝕刻掉。在某些實施例中，所述的製造無引腳積體 電路兀件的方法，包括：在金屬引線框的頂面部分蝕刻出通道；並且通過 二述通道’將-部分所述封裝材概站金刺雜和IC晶#之間，以使 侍封裝材料是隔離的並且不能到達部分凹槽。在某些實施例中，所述的製 造無引腳積體電路it件的方法’可能包括：從―個多單元引線 裝隔離無引腳ic封裝元件。 钌 上述本新型的創作内容並不代表本新型的每一個實施方式或本新型的 所有方面。 【實施方式】 下方將結合附圖對本創作的各具體實施例進一步說明。雖缺本創作社 合了具體=例進行綱，但是應當理解本創作可財多種方式實施 不僅限於适裏所公佈的具體實施例；本創作提供的具體實施例使得本創作 公開更加充分和完整，且使得本領域技術能夠完全掌握本創作的範圍。 β圖3A-BS無引腳1C封裝元件300實施例的兩個不同角度的視圖。圖 3Α是1C封裝元件300在封裝之前的俯視圖，圖3Β是圖3Α中IC封裝元件 300在A-A線處的剖面圖。如圖3B中實施例所示，忙封裝元件3⑻包括 ic a曰片304 ’其女裝在1C封裝元件300的中部，並被封裝材料3〇8所覆蓋， 且便於與外部元件（圖中未顯示’如PCB)之間通過大量端點形成電連接； 每個端點包括焊接區318、接點區3〇6和連接在焊接區318與接點區3〇6之 間的金屬轨跡線322。在此實施例中，IC晶片3〇4和焊接區318之間通過 引線314形成了電連接。IC封裝元件3〇〇還包括大量金屬軌跡'線322，其 在焊接區318和接點區306之間形成電連接。這樣，可以減少任何兩個焊 接區318的間距，而非必須減少相應接點區3〇6的間距。例如，在圖3a中， 焊接區318A和318B的中心距大約為〇 2賴，但是相關接點區3嶋和3〇6b 的中心距大料G.5mm。在各個實關巾，可明加焊接_數量而不 M382576
J··从上 Γ；ρ ^^I 需要減小ic晶片的尺寸。 1年月補充^ 如圖4Α所示，金屬引線框（LF) 424的頂部表面構建了大量金屬軌跡 線422。在某些實施例中，LF424可能實際上是一塊平板金屬片。圖4Β為 圖4Α中細節Α的放大圖。在LF424的頂面根據預定的圖案進行蝕刻，就 形，了凹槽426，而凹槽426之間保留的部分就形成了金屬執跡線422 (如 細節A所示）。圖4A中，LF424上的陰影部分即金屬軌跡線422，而LF424 上沒有陰影的部分即是凹槽426 »雖然本新型給出了一種具體的餘刻圖案， 但是可選用任意圖案對金；| LF424進行侧。焊接區418 (用於通過⑽ 連接到1C晶片）可以包括一部分位於lf424四周的金屬軌跡線422。更具 體地說，接點區406(用於在ic晶片和PCB上相關的接點之間形成電連接） 可以被佈置到金屬軌跡線422的相對于焊接區的另一端。在圖从中， 相對于烊接區418*言’所有的接點區4〇6 (圖中為正方形）都位於忙封 裝元件靠内的位置。然而’在不同實施例中，一些接點區4()6可能被直接 放置在焊接區418的下方，或可能被放置在靠近LF424周邊的焊接區418表 面。 一般情況下，當1C晶片被安裝到一個LF上時，LF位於IC曰片下方 的部分被叫做晶粒賴區（DA區）e # LF的頂面的某些部分^擇性的 侧後’ LF上就形成了凹槽，而凹槽間突起的部分就形成了金屬執跡線。 當1C晶片被安裝在帶有的凹槽（延伸到DA區）的^上時，^晶 由敍刻的凹槽所確定的金屬執跡線所支和凹槽間將形成空 為了確保ic晶片和金屬軌跡線的之間的貼合，在IC晶片的底面塗ς了、 合層。在某些實關中，齡層可能是不導電的介質，使得1(：晶片面 和1C晶片的金屬軌跡線之間相互絕緣。在確保1(：晶片與金屬 電 離後’可採用模塑、解、噴霧或其他封裝技術，使用封裝材 石夕樹脂或其他成型材料）進行洗注，覆在IC晶片的表面、夥、 填充在LF_^，包括填纽於DA(I凹槽和1(：⑼_空隙]以及 圖5A至圖5D是-個無引腳IC封裝元件實施例在製造過程中 段的示意圖。如圖5A所示，製造過程從金屬引線框524開始。在 對金屬引線框524的頂面進行蝕刻構建凹槽526，從而確定 ’ 似。焊接請同樣被佈置在金屬軌跡線頂面的—部分上。在金 9 522的頂面的一部分附上—居订 金屬軌跡線522上鑛上 < 料，即可構建详接請。例如，在 __丨線=上些實施例中，在將以請 ΐ::二:嶋51。。==== 線框524上後，屬日Γ框524上。在將IC晶片安裝到金屬引 連接。在本實施财雜區似之間可形成電 和引=D進所裝材料508 (圖帷影所示部分）用於對IC晶請 充在位於晶粒無區、的=52=材枓508還填充在凹槽526中，包括填 "£rFLp^ 麟’從而暴露出封裝材料508的底面。在一些實施例令，回 =括^些金職職進行部分_。在_些實 = ===—广層可焊接材料5" ’如金紐層迎。在-些ϊ實例 面大致貼人^卜&面的一部分可能被_，從而與封裝材料5〇8的底 tm。在某些實施例中，在金屬軌跡線似底面的一部分塗上了保
㈣圖Γί是一個無引腳IC封裝元件_的不同角度視圖。® 6A是IC 輪廊和LF上刪c晶片_的晶粒_二^^ 606郭(如ϋΐΓ-'ν外排端點的焊接11616直接位於其所對應的接點區 遠接肉的上方’且通過金屬軌跡線622與内排的端點形成電 ⑽H焊接區618位於其所對應的接點區6%橫向較遠的位置， 連接imf「執跡線622形成電連接。可以看到’内排焊接區618可能 連接到DA區602下方的接點區6〇6。 請是圖6A中的IC封裝元件_線上A A處的剖面圖。 件_包括IC晶片604，IC晶片6〇4的下方有一枯合層61〇，用來將封^ M382576
片604固定到金屬執跡線622上。在某些實施例中，粘合層610可能由絕 緣的銀膠材料組成。在某些實施例中，1C晶片604與外排的焊接區616通 過引線612形成電連接，並與内排的焊接區618之間通過引線614形成電 連接。在某些實施例中，金屬執跡線622構成了内排焊接區618和DA區 602下方接點區606之間的電連接通道。可以看到封裝材料6〇8 (圖中陰影 所示部分）將1C晶片604以及引線612和614封裝起來。此外，還可看到 封裝材料608位於1C晶片604下方的金屬軌跡線622之間的區域。 圖6C是1C封裝元件600的仰視圖。1C封裝元件600的底面包括封裝 ' 材料6〇8 (圖中無陰影的部分）、金屬軌跡線622 (圖中陰影所示部分）和 接點區606 (圖中無陰影的正方形）。在某些實施例中，位於IC封裝元件 • 6〇〇周邊的接點區606之間被相互間隔開。在某些實施例中，由於這些接點 沒有轨跡延伸到外面，所以其間距可能大於或等於pCB設計規格要求的最 小間距。在某些實施例中，金屬軌跡線622提供了内排焊接區618與位於 DA區下方接點區606之間的電連接，使内排焊接區618的間距小於pCB 設計規格要求的最小間距’同時也使接點區6Q6之間可至少保持彼此間的 -最小間距。從而使女裝在LF上的1C晶片和安裝了 1C封裝元件600的PCB 之間建立更多的電連接。 圖7A和B所不為1C封裝元件700的兩個實施例的俯視圖。為了便於 描述’圖中將沒有顯示引線，而只顯示了封裝材料7〇8和1(：晶片7〇4的輪
廟。在本實施例中，通蝴LF 了頁面侧形成了凹槽726，從而確定了焊接 區716和718，以及金屬軌跡線722。此外，银刻後形成的凹槽似還確定 了晶粒粘貼墊（DAP，DieAttaehPad) 7G2e在不同實施例中，DAp7〇2可 能位於LF頂面的中部，即安裝IC晶片的位置。在本實施例中晶粒枯貼 區（DA區）是LF上用於安裝IC晶片的部位，其可能包括DAp7〇2和一部 分金屬軌跡線722。在-些實施例中，最好包含DAp7()2，赠ic晶片7〇4 進行散熱，同時能為！C晶片7〇4提供支撐結構，和/或為IC晶片7〇4提供 電氣接地。例如，本實施例裏，通過將金屬軌跡線咖 上提供額外的搵城。 M382576 補充 3 没有㊁引線，而只顯示作裝材料7〇8和ic 是位於IC封裝元件7GG接點區外排的三個焊接區 -是錄IC封裝元件漏兩排接點區的三個焊接區的放大 、即所7F，焊接區716直接位於接點區7〇6的上方，因此 716中線之間必須間隔與接點區7〇6中心距相同的距離。從細節c可以: 到’當接點區中的-個接點區沒有直接位於焊接區718下方時， 和718間的距離可以更近。在某些實施例中在〇Αρ7〇2上構建了通道°7〇3， 使封裝材料能_利地流人，否則封裝材料將不能或很難到達所需部位。’ 所福㈣B和細節C的獻®。® 7C_H卿的是細節B和 細郎c製作過程中不同階段的側視圖。圖7C令，在奶24上形成的凹样 mm接區716的位置。另外，㈣4的頂面和底面被選擇性地& 圖7D中，封裝材料708澆注在LF724的頂部以及凹槽726 =。在圖7E中，選擇性#刻掉LF的底面，從而使得焊接區爪彼此曰之間 隔離開，並確定了接點區7〇6。如本實施例所示，焊接區716和接點區兀6 的直，大致相同。即使焊接區716的直徑減小，特定區域内的焊接區MG 的數量仍然受到位於此區域内接點區7〇6數量的限制。 β如圖7B中、.，田節C疋焊接區之- 718的放大圖，其金屬軌跡線位於兩個 焊接區716之間，焊接區《716包括直接位於其下方的接點區7〇ό。在本實施 例中，焊接區716和718位於LF的頂面並呈長方形’而接繩7〇6則位於 LF的底面並呈圓形。如細節c所示，内排的焊接區爪和爪的寬度相對 於外排焊接區來說減小了（如細節Β所示）。因為焊接區716和718 =寬度 小於接點區706的寬度’所以焊接區716和718之間可以比接點區7〇6 = 間放置得更接近。此外，為了減少焊接區716和718之間的距離 718下方將不直接放置接點區7〇6 ^ 接^ 如圖7F-H所示的是1C封裝元件700在具體實施例中構建焊接區716 和718 ’以及接點區706的各階段示意圖。圖7F所示的是LF724的一部分， LF724的頂面進行了部分蝕刻，構建了凹槽726，並進一步確定了焊接區 716、焊接區718以及從焊接區718延伸出的金屬軌跡線722 (細節c中即 有一金屬軌跡線）。在圖7G中，封裝材料708用來覆蓋焊接區和凹槽。此 外’在LF724的底面位於焊接區716下方的位置選擇性地鍍上金屬鍵層 12
M382576 值於焊接區71 下 '728。在圖7H中，對LF724的底面進行選擇性回蝕後， -方的LF724被部分移除，從而使焊接區718與焊接區716及其下方的接點 、區706電隔離<» ‘ 部分蝕刻的步驟可以由多次蝕刻加工來完成，例如，在LF724頂面塗 一層可光成像阻姓劑(光阻劑），像可光成像銀膠《光阻劑可以被旋轉塗布在 LF724上，然後附上一層光掩膜(光罩），暴露在紫外光下，其中，暴露的部 分會被去除。因此，阻蝕劑根據圖案在LF724的頂面確定了凹槽726的位 置。接下來，通過浸泡或加壓喷霧，對LF724進行蝕刻，部分形成焊接區 -716、718以及金屬軌跡線722。然後，阻蝕劑可用常規方法去除。 • 圖8A-D為各實施例的LF頂面的焊接區如何通過金屬轨跡線與具有不 φ 同質性的IC封裝元件連接的圖例。圖8A為裝有兩塊ic晶片804a和804b 的1C封裝元件800實施例，其中一塊晶片疊在另一塊上，可以看到底部的 1C晶片804b被安裝在1C晶片下方延伸出的金屬軌跡線上。圖8B為裝有 兩塊1C晶片804a和804b的1C封裝元件800實施例，其中一塊晶片疊在 另一塊上。如下面的更詳細的描寫中所述，底部的IC晶片8〇4b為倒(覆) - 晶封裝構型。圖8C為裝有兩塊1C晶片804a和804b的1C封裝元件800實 施例，兩塊晶片並排安裝在多晶片模組（multi_chipm〇dule MCM)中。雖 然本實施例只包含兩塊1C晶片804a和804b，但可在LF上安裝大量ic晶 片。圖8D為系統封裝構型的ic封裝元件800實施例，LF上裝有1C晶片 804及一個或多個無源元件83〇，如電阻或電容。雖然本實施例只包括一塊 攀.IC晶片804和兩個無源元件830,但是仍可在IC封裝元件中的LF上安裝 大量1C晶片和無源元件。 過去，在兩塊1C晶片間、1C晶片與其他接點和/或無源元件間使用接 點和/或無源元件是昂貴的，因為其連接到PCB的接點被其他接點所包圍。 為了k供連接到接點的獨立電氣通路，pCB需要第二層、第三層，這樣顯 著增加了生產成本。使用金屬軌跡線連接焊接盤與其他位置，如DA區下 方，可以建立獨立的電連接，無需因使用多層PCB而增加費用。 圖9A-C中’圓9B的1C封裝元件的實施例具有兩塊IC晶片9〇4a和 9〇4b，兩塊晶片倒晶封裝在一起。從圖9B中可以看到底部的ic晶片9〇4b 通過倒(覆)晶焊接技術直接貼附在電接點上，例如，其中IC晶片9祕的焊 13 M382576
WiKj 接盤包括其上的谭接凸點，該4接凸點可以回#結合LF上電接點的上表 面。本實施例中，頂部的IC晶片904a可以通過引線連接到位於IC封裝元 件900周邊的大量焊接區916。金屬軌跡線可以用於在大量焊接1916和倒 裝(覆晶)晶片（flipchip，FC)的接點之間形成電連接。圖冗是冗封裝元 件_的仰視圖。金厲轨跡線922 (圖中陰影部分所示）可以將忙^元 件900周邊的焊接區與底部的IC晶片_下方的FC接點相連接。 圖10A和H)B中，® 10A是用於建立有氣腔IC封裝元件的lfi〇24 的實施例，圖10B是已完成的有氣腔IC封裝元件_的實施例其lf刪 上安裝了-塊1C晶片麵。在圖1GA中，對1^1〇24的頂面進行部分敍刻， 從而構建凹槽1026並因此轉定了位於凹槽娜之間的金屬執跡線職。 在金屬軌跡線1G22頂面的焊接區和LF1G24底_接點區上鍍有金屬鍍層 1028。在LF1024上還使用了封裝材料麵，因此凹槽中填入了封裝材料 1008，且开》成了從LF1024邊緣向上延伸的兩個立柱。圖1〇B所示已完成 的有氣腔1C封裝元件1〇〇〇是由圖ι〇Α中的LF1〇24構建的，lfi〇24上粘 合了 1C晶片1004,並且通過引線將忙晶片的焊接區相連 接。此外，橫跨立柱頂端有一個蓋子，將IC封裝元件密封起來，在IC晶 片1004上方建立氣腔。蓋子由固體材料製造，比如：金屬，塑膠，玻璃， 陶瓷’或其他固體材料，或者這些材料中的一種或多種的組合。此外，LF1〇24 的底面已被蝕刻，以隔離接點區和金屬軌跡線。 圖11A和11B為用在1C封裝元件中的LF1124的實施例。圖11A為 LF1124的俯視圖，其中凹槽1126 (圖中陰影所示區域）通過選擇性蝕刻法 在遠離LF1124的部分頂面處根據預定樣式構成υ?1124上凹槽1126之間 未被蝕刻的部分是金屬軌跡線1118，其被用於為安裝在其上的IC電路提供 支极和/或為LF1024頂面的焊接區和LF1024底面的接點區之間的線路信號 提供電氣通路。圖11B是LF1024的仰視圖，其中金屬軌跡線（圖中陰影所 示區域）為LF1024頂面的焊接區和LF1024底面的接點區11〇6提供線路。 通常’LF1024上接點區1106的位置由將要安裝ic封裝元件的pcb上接點 的樣式決定。例如，本實施例中，要求接點區1丨〇6在ic封裝元件周圍等 間距排列成兩排。可以看到，使用複雜的金屬執跡線樣式允許從非等間距 焊接區向兩排等間距接點區傳遞電信號，而以前使用金屬LF是沒有這—能 M382576 力的。 除上述圖11A-B相關改進之外，使用金屬執跡線乂許接點區遠離它^ 各自的焊接區’同時也顯著增加了可用於規定的1(：封1元件和晶片尺寸組 δ的I/O連接數目，而且也允許IC晶片增加的尺寸連同規定的^封裝元件 尺寸-起紐肖。絲-麵12A_G給A讀祕種1(：縣耕構型典型 的可用I/O連接數的表，以及各種IC封裝元件構型的實例。表—所示^為 對於具有0.5mm接觸點間距的三種不同類型5χ5 _ IC封裝元件當三種 不同尺寸1C晶片安裝在其中時’可用的！/〇連接的典型數目。這三類封 裝元件是：QFN封裝元件（圖12A和12B)、TApp封裝元件（圖i2c和 12D)和HLA封裝元件（圖12E-G)。如表中第一列的模具尺寸所示，4χ4腿 的ic晶片太大了，而不能被裝在5x5 mm的QFN或ΤΑρρ型ic封裝元件 中。然而，利用金屬執跡線在遠離焊接區處放置接點區，允許4x4mn^ic 晶片用在5x5 mm的HLA型IC封裝元件中，關於此的一個實例如圖12E 所示。如表所示，典型的實施例可能有大約64個j/〇連接，用於連接pcB 上的兩排接點。雖然此表用了 4x4胃IC晶片的實施例，但甚至更大的冗 晶片也可能裝在5x5 mm的HLA型IC封裝元件上。 封裝類型 4x4 mm 3x3 mm QFN N/A 32 I/O, 1 排 44 I/O, 2 排 TAPP N/A 36 I/O, 1 排 60 I/O, 2 排 HLA 64 1/0, 2 排 88 I/O, 4排 100 1/0, 5排 表一 下歹丨所示為當3x3 mm 1C晶片連同三種不同類型5x5 mm 1C封裝元 件一起使用時》I/O連接的典型數目。當一塊3X3 mm的ic晶片與qfn咬 TAPP類型1C封叢元件一起使用時，在IC電路周圍僅有夠一排接點，僅& 或36個I/O連接的空間供可用。當同樣的的IC晶片和封裝元件尺寸組合與 HLA型1C封裝元件一起使用時，可用"ο連接的數量升至88個有4排 接點區可用於連接到PCB。 最後一列所示為當2x2 mm 1C晶片連同三種不同類型5x5 mm 1C封裝 元件一起使用時，I/O連接的典型數目。當一塊2x2 mm的1C晶片與qFn 15 M382576 率月 ^ TAPP _ IC難元件__起使料’在ΐ(：電路觸可有錢兩排的接點 區"刀別通過最多44和60個I/O連接與PCB相連。當 釦 ^L ί 的接點區（12〇Μ205所禾）可用於連接到pCB。 元件尺寸料』元、接點間距和封裝 ==被理解為可用接點的最大數量。;二==作 二，數Ire此外，雖然表格只給出了三種5x5 mmIC型號的數量 介面數量的顯著增_件’㈣ 下面對圖12Git行特別說明，該實施例所示為在
0 , IC Ϊ 使用較短的引線來連接旧晶片與焊接區。這樣減 i) 1==顯著節約了成本，尤其说丨線制昂貴的金屬（如： 相社入的L 以看待’㈣的實施例可爾用表面佈線和内部佈線 實施例中，可能只採用表面佈線的方式，而其他某 二實細《例可月b/、採用内部佈線的方式。 雖然通過附圖和前面的詳細描述對本新型的各個實施例進行了說 但是應^理解本創料迦於在此·的實關，而可以在不達背本 實質的刖提下進行多種重排、修正和等效變換。 【圖式簡單說明】 照以下詳細說明並結合附圖可對本創作的各項實施例有一個較 圖iA_B是一個無引腳四方爲平封裝（QFN)無引腳IC封裝元件的實 施例不意圖， 圖2是-個熱無引腳_ (TLA) 1(：封裝元件的實施例示意圖； MJ82576 的· ΐ· 2修jt 圖3A-B是與封裝元件相比具有較大尺寸冗晶片^刻爾件 的實施例示意圖； 圖4AB疋頂。p表面形成了大量金屬軌跡線的金屬引線框的實施例示 意圖； ® 5A-E是-個無引腳忙封裝元件實施例在製造過程中不同階段的示 意圖； 圖6A-C是具有兩排焊接區和多排接點區的IC封裝元件實施例在不同 角度的示意圖； 圖7A-B，具有晶粒轴貼塾的無引腳1(：封裝元件多個實施例的示意圖； 圖7C-J疋圖7B中1C封裝元件的各個面在製造過程中不同階段的示意 圖； 圖8A-D是無引腳1(：封裝元件多個實施例的示意圖； 圖9A-C是具有兩個倒晶封裝IC晶片和引線陣列的無引腳忙封裝元件 的典型實施例示意圖； 圖10A-B是内部有氣孔的無引腳1(：封裝元件的典型實施例示意圖； ® 封裝元件引雜的典型實施例示意圖； 圖12A-G是各種ic封裝元件構型的圖例。 【主要元件符號說明】 306A，306B接點區 006接點區 318A，318B焊接區 308封裝材料 304 1C晶片 318,618焊接區 306接點區 322, 622金屬執跡線 424, 524金屬引線框 6〇4 1C晶片 6〇8封裝材料 17

Claims (1)

  1. M382576 六、申請專利範圍：
    1、一種無引腳積體電路元件，包括·· θ二金屬引線框，所述金屬引線框有一頂面和一底面，並包括 大量從頂面延伸到底面的端點，每個所述端點都包括位於頂部表 面的一焊接區、位於底面的一接點區和連接兩者的一金屬執跡線； —1C晶片，所述1C晶片安裝在金屬引線框的頂面，並包括 大量焊接盤； 大量引線，所述每根引線都與焊接區及焊接盤連接； 一二巧裝材料，其覆蓋所述IC晶片、所述大量引線和所述大量 鈿點中母個端點的至少一部分； 裝；其特徵在於’所述大量端點的接點區沒有被封裝材料完全封 ㈣I述if端點中至少有一個端點包括電連接到焊接區的金屬 軌跡線，該焊接區從接點區橫向延伸； 和接^ 與金屬引、_頂面垂直的—導、絲連接焊接區 ‘.，S，而疋通過金屬執跡線來對焊接區和接點區進行電連接。 至少有一個V述二積特徵在於’ 片下方的接點區和位於1C晶片周邊的晶 3、 根據凊求項2所述的無引腳積體 包括位於金屬軌跡線和ic晶片之間_合層Μ ’，、特徵在於， 4、 根據請求項i所述的無引 從接點區橫向延伸的焊接區是以Y兀件，其特徵在於， 現的：相對於IC曰曰曰片，從接點區 ^^一種或多種方式實 接點區向畴布；排布在與ic晶片邊緣晶片，從 ⑽年1.2}修正 ,5、根據請求項丨所述的無引腳積體電 I個端點上焊接區的表面積小於連二^區 所述所1的無⑽積縣路树，其特徵在於， 於所 1所述的無引腳積體電路元件，包括： 4大里、點中的第一端點，所述第 、壶拉5丨笛 接點=:，區，所述接點區直 = 於其Γ面制第一 所述大置舳點中的第二端點，所述第_ 接點區的第二焊接區，所雜繩直 連接到第二 接點的第三端點，所述第三端點有L連接到第三 間；^特徵在於’第三焊接區位于第—焊接區和第二焊接區之 伸。斤述第—接點區在第—接點區和第二接點區之間區域橫向延 體電路元件，包括： ^的第四端點；所述第四端點有一連接 區； 其特徵在於， 接點區的第四焊接區； 丨地弟四端點有一連接到第四 之間；且 所述第四焊接區位于第-焊接區和第二焊接區 伸。斤述第四接點區在第—接點區和第二接點區之間區域橫向延 9、根據請求項丨所述的無引腳積體電路元件，其特徵在於， 19 M382576 包括： 所述大量端點中的第一端點，所述第— 所述大量端點中的第二端點，戶m第端點區·’ 區鄰近的第二接點區；以及 义弟一鸲點有一與第一接點 所述大量端點中的第三端點，所沭筮二 區延伸到第二接點區的金屬轨跡線。 —鸲^有一從第一接點 1〇、根據請求項1所述的無⑽積體電路 所述金屬引線框的底面被選擇性餘刻 致與封裝㈣底Φ貼合。 ㈣丨線框底面大 η、根據請求項1所述的無引腳積體電路 所述金屬引線框的底面被選擇性侧，從 至少-部分大致與封紐料底祕合。 “屬⑽框底面的 12:根據請求項1所述的無5丨腳積體電路元件， 所述金屬引線框的底面被選擇性蝕刻 八特徵在於， 裝材料内部的至少-部分被使金屬引線框位於封 13、根據請求項丨所述的無引腳積體電路 i 所述金屬軌跡線的底面被選擇性侧，從^執、 裝材料内部的至少-部分被移除。 史金屬轨跡線位於封 141Ϊ據請求項1所述的無引腳積體電路元件，包括· 面；I金屬鍍層，所述金屬鍍層位於所述焊接區中至少一個的頂 刻移ί特徵在於’金屬引線框位於金屬鍍層下的至少—部分被钱 15、根據請求項14所述的無⑽賴電路元件，其特徵在於， 20 ^ . ，皋1貝修正 的位於金屬鍍層下的金屬弓I線框被充分地飯刻移除n|__補充 耳 丨腳麵路元件，其特徵在於： 二接中的第—焊接區的寬度小於5密耳； 述第-4接區邊緣和第二焊接區邊緣之間的距離小於5密 所ij少無引腳積體電路元件’其舰在於， 個金屬軌跡線的部分底面塗有一層保護材料。 所述ϊ蔓述的無引腳積體電路元件，其特徵在於, 乐隻材枓為壌軋樹脂、氧化物或阻焊劑。 區店據請求項1所述的無引腳積體電路元件，包括在接ϋ £底面形成的一可焊錫保護層，·其特徵在於.〇括在接點 =述可焊錫保護層從以下幾組中選取·· 錄、趣和金的電鍍疊層； 錦和金的電鍍疊層； 鎳和銀的電鍍疊層； 銀、金或錄和金的金屬鍍層； 錫的電鍍層或置換鍍層；曰， Hi錯組成的焊料塗層，或錫合金焊料； 組成的嬋球’或錫合金焊料，·以及 -有有機可焊性防腐劑塗層的裸銅。 電路元件’其特徵在於， 21根據清求項1所述的無引腳積體 21 M382576 包括安裝到所述ic晶片上， 1C晶片。
    並與金屬引線框電連接的一個或多個 22
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US8072053B2 (en) 2011-12-06
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US20100224971A1 (en) 2010-09-09
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JP5524322B2 (ja) 2014-06-18
KR101088554B1 (ko) 2011-12-05

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