TWI369771B - Leadless integrated circuit package having high density contacts and manufacturing method - Google Patents

Leadless integrated circuit package having high density contacts and manufacturing method

Info

Publication number
TWI369771B
TWI369771B TW098119022A TW98119022A TWI369771B TW I369771 B TWI369771 B TW I369771B TW 098119022 A TW098119022 A TW 098119022A TW 98119022 A TW98119022 A TW 98119022A TW I369771 B TWI369771 B TW I369771B
Authority
TW
Taiwan
Prior art keywords
manufacturing
integrated circuit
high density
circuit package
leadless integrated
Prior art date
Application number
TW098119022A
Other languages
English (en)
Other versions
TW201034151A (en
Inventor
Tung Lok Li
Original Assignee
Kaixin Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kaixin Inc filed Critical Kaixin Inc
Publication of TW201034151A publication Critical patent/TW201034151A/zh
Application granted granted Critical
Publication of TWI369771B publication Critical patent/TWI369771B/zh

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Classifications

    • H—ELECTRICITY
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    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/0781—Adhesive characteristics other than chemical being an ohmic electrical conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
    • H01L2924/097—Glass-ceramics, e.g. devitrified glass
    • H01L2924/09701—Low temperature co-fired ceramic [LTCC]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/1517—Multilayer substrate
    • H01L2924/15182—Fan-in arrangement of the internal vias
    • H01L2924/15183—Fan-in arrangement of the internal vias in a single layer of the multilayer substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/153—Connection portion
    • H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
    • H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/161—Cap
    • H01L2924/1615—Shape
    • H01L2924/16195—Flat cap [not enclosing an internal cavity]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Geometry (AREA)
  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
TW098119022A 2009-03-06 2009-06-08 Leadless integrated circuit package having high density contacts and manufacturing method TWI369771B (en)

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Families Citing this family (81)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9230910B2 (en) 2006-03-09 2016-01-05 Tela Innovations, Inc. Oversized contacts and vias in layout defined by linearly constrained topology
US7956421B2 (en) 2008-03-13 2011-06-07 Tela Innovations, Inc. Cross-coupled transistor layouts in restricted gate level layout architecture
US8541879B2 (en) 2007-12-13 2013-09-24 Tela Innovations, Inc. Super-self-aligned contacts and method for making the same
US8653857B2 (en) 2006-03-09 2014-02-18 Tela Innovations, Inc. Circuitry and layouts for XOR and XNOR logic
US8839175B2 (en) 2006-03-09 2014-09-16 Tela Innovations, Inc. Scalable meta-data objects
US7917879B2 (en) 2007-08-02 2011-03-29 Tela Innovations, Inc. Semiconductor device with dynamic array section
US7763534B2 (en) 2007-10-26 2010-07-27 Tela Innovations, Inc. Methods, structures and designs for self-aligning local interconnects used in integrated circuits
US7446352B2 (en) 2006-03-09 2008-11-04 Tela Innovations, Inc. Dynamic array architecture
US9563733B2 (en) 2009-05-06 2017-02-07 Tela Innovations, Inc. Cell circuit and layout with linear finfet structures
US9035359B2 (en) 2006-03-09 2015-05-19 Tela Innovations, Inc. Semiconductor chip including region including linear-shaped conductive structures forming gate electrodes and having electrical connection areas arranged relative to inner region between transistors of different types and associated methods
US8448102B2 (en) 2006-03-09 2013-05-21 Tela Innovations, Inc. Optimizing layout of irregular structures in regular layout context
US9009641B2 (en) 2006-03-09 2015-04-14 Tela Innovations, Inc. Circuits with linear finfet structures
US8658542B2 (en) 2006-03-09 2014-02-25 Tela Innovations, Inc. Coarse grid design methods and structures
US8461694B1 (en) * 2006-04-28 2013-06-11 Utac Thai Limited Lead frame ball grid array with traces under die having interlocking features
US8460970B1 (en) 2006-04-28 2013-06-11 Utac Thai Limited Lead frame ball grid array with traces under die having interlocking features
US8310060B1 (en) 2006-04-28 2012-11-13 Utac Thai Limited Lead frame land grid array
US8487451B2 (en) 2006-04-28 2013-07-16 Utac Thai Limited Lead frame land grid array with routing connector trace under unit
US8492906B2 (en) * 2006-04-28 2013-07-23 Utac Thai Limited Lead frame ball grid array with traces under die
US9761435B1 (en) 2006-12-14 2017-09-12 Utac Thai Limited Flip chip cavity package
US9711343B1 (en) 2006-12-14 2017-07-18 Utac Thai Limited Molded leadframe substrate semiconductor package
US8667443B2 (en) 2007-03-05 2014-03-04 Tela Innovations, Inc. Integrated circuit cell library for multiple patterning
US8453094B2 (en) 2008-01-31 2013-05-28 Tela Innovations, Inc. Enforcement of semiconductor structure regularity for localized transistors and interconnect
US7939443B2 (en) 2008-03-27 2011-05-10 Tela Innovations, Inc. Methods for multi-wire routing and apparatus implementing same
SG192532A1 (en) 2008-07-16 2013-08-30 Tela Innovations Inc Methods for cell phasing and placement in dynamic array architecture and implementation of the same
US9122832B2 (en) 2008-08-01 2015-09-01 Tela Innovations, Inc. Methods for controlling microloading variation in semiconductor wafer layout and fabrication
US9947605B2 (en) 2008-09-04 2018-04-17 UTAC Headquarters Pte. Ltd. Flip chip cavity package
US8531022B2 (en) * 2009-03-06 2013-09-10 Atmel Corporation Routable array metal integrated circuit package
MY163911A (en) 2009-03-06 2017-11-15 Shenzhen Standarad Patent & Trademark Agent Ltd Leadless integrated circuit package having high density contacts
US7858443B2 (en) * 2009-03-09 2010-12-28 Utac Hong Kong Limited Leadless integrated circuit package having standoff contacts and die attach pad
CN102395981B (zh) 2009-04-03 2014-12-03 凯信公司 Ic封装的引线框架和制造方法
US20100314728A1 (en) * 2009-06-16 2010-12-16 Tung Lok Li Ic package having an inductor etched into a leadframe thereof
US9449900B2 (en) 2009-07-23 2016-09-20 UTAC Headquarters Pte. Ltd. Leadframe feature to minimize flip-chip semiconductor die collapse during flip-chip reflow
US9362138B2 (en) 2009-09-02 2016-06-07 Kaixin, Inc. IC package and method for manufacturing the same
US8661392B2 (en) 2009-10-13 2014-02-25 Tela Innovations, Inc. Methods for cell boundary encroachment and layouts implementing the Same
US9355940B1 (en) 2009-12-04 2016-05-31 Utac Thai Limited Auxiliary leadframe member for stabilizing the bond wire process
US8575732B2 (en) 2010-03-11 2013-11-05 Utac Thai Limited Leadframe based multi terminal IC package
US20110248392A1 (en) * 2010-04-12 2011-10-13 Texas Instruments Incorporated Ball-Grid Array Device Having Chip Assembled on Half-Etched metal Leadframe
US8455304B2 (en) 2010-07-30 2013-06-04 Atmel Corporation Routable array metal integrated circuit package fabricated using partial etching process
US8304277B2 (en) 2010-09-09 2012-11-06 Stats Chippac, Ltd. Semiconductor device and method of forming base substrate with cavities formed through etch-resistant conductive layer for bump locking
US8476772B2 (en) 2010-09-09 2013-07-02 Stats Chippac, Ltd. Semiconductor device and method of forming base substrate with recesses for capturing bumped semiconductor die
TWI420630B (zh) * 2010-09-14 2013-12-21 Advanced Semiconductor Eng 半導體封裝結構與半導體封裝製程
US9159627B2 (en) 2010-11-12 2015-10-13 Tela Innovations, Inc. Methods for linewidth modification and apparatus implementing the same
TWI455213B (zh) * 2010-12-15 2014-10-01 Chipmos Technologies Inc 無外引腳封裝結構及其製作方法
US8735224B2 (en) 2011-02-14 2014-05-27 Stats Chippac Ltd. Integrated circuit packaging system with routed circuit lead array and method of manufacture thereof
US8633063B2 (en) 2011-05-05 2014-01-21 Stats Chippac Ltd. Integrated circuit packaging system with pad connection and method of manufacture thereof
US8557638B2 (en) 2011-05-05 2013-10-15 Stats Chippac Ltd. Integrated circuit packaging system with pad connection and method of manufacture thereof
US8749056B2 (en) * 2011-05-26 2014-06-10 Infineon Technologies Ag Module and method of manufacturing a module
CN102231372B (zh) * 2011-06-30 2014-04-30 天水华天科技股份有限公司 多圈排列无载体ic芯片封装件及其生产方法
CN102231376B (zh) * 2011-06-30 2013-06-26 天水华天科技股份有限公司 多圈排列无载体双ic芯片封装件及其生产方法
TWI455280B (zh) * 2011-07-19 2014-10-01 矽品精密工業股份有限公司 半導體封裝件
CN105448877B (zh) * 2011-08-01 2019-08-23 日月光半导体制造股份有限公司 半导体封装
US9275877B2 (en) 2011-09-20 2016-03-01 Stats Chippac, Ltd. Semiconductor device and method of forming semiconductor package using panel form carrier
US8513788B2 (en) 2011-12-14 2013-08-20 Stats Chippac Ltd. Integrated circuit packaging system with pad and method of manufacture thereof
US8569112B2 (en) * 2012-03-20 2013-10-29 Stats Chippac Ltd. Integrated circuit packaging system with encapsulation and leadframe etching and method of manufacture thereof
US9312194B2 (en) 2012-03-20 2016-04-12 Stats Chippac Ltd. Integrated circuit packaging system with terminals and method of manufacture thereof
WO2013165352A1 (en) * 2012-04-30 2013-11-07 Hewlett-Packard Development Company, L.P. Socket with routed contacts
US9717146B2 (en) 2012-05-22 2017-07-25 Intersil Americas LLC Circuit module such as a high-density lead frame array (HDA) power module, and method of making same
CN102779763A (zh) * 2012-06-05 2012-11-14 华天科技（西安）有限公司 一种基于腐蚀的aaqfn产品的二次塑封制作工艺
US9397031B2 (en) * 2012-06-11 2016-07-19 Utac Thai Limited Post-mold for semiconductor package having exposed traces
CN102738009A (zh) * 2012-06-13 2012-10-17 华天科技（西安）有限公司 一种基于刷磨的aaqfn框架产品扁平封装件制作工艺
CN102738017A (zh) * 2012-06-13 2012-10-17 华天科技（西安）有限公司 一种基于喷砂的aaqfn产品的二次塑封制作工艺
CN102738016A (zh) * 2012-06-13 2012-10-17 华天科技（西安）有限公司 一种基于框架载体开孔的aaqfn产品的二次塑封制作工艺
US9196504B2 (en) * 2012-07-03 2015-11-24 Utac Dongguan Ltd. Thermal leadless array package with die attach pad locking feature
CN103021883A (zh) * 2012-12-09 2013-04-03 华天科技（西安）有限公司 一种基于腐蚀塑封体的扁平封装件制作工艺
CN103021875A (zh) * 2012-12-09 2013-04-03 华天科技（西安）有限公司 一种基于aaqfn框架产品二次塑封的扁平封装件制作工艺
CN103021882A (zh) * 2012-12-09 2013-04-03 华天科技（西安）有限公司 一种基于磨屑塑封体的扁平封装件制作工艺
CN103021994A (zh) * 2012-12-28 2013-04-03 华天科技（西安）有限公司 一种aaqfn二次塑封与二次植球优化的封装件及其制作工艺
US8916422B2 (en) 2013-03-15 2014-12-23 United Test And Assembly Center Ltd. Semiconductor packages and methods of packaging semiconductor devices
JP2014203861A (ja) * 2013-04-02 2014-10-27 三菱電機株式会社 半導体装置および半導体モジュール
US20140346656A1 (en) * 2013-05-27 2014-11-27 Texas Instruments Incorporated Multilevel Leadframe
CN103390563B (zh) * 2013-08-06 2016-03-30 江苏长电科技股份有限公司 先封后蚀芯片倒装三维系统级金属线路板结构及工艺方法
JP6494341B2 (ja) 2015-03-13 2019-04-03 株式会社ジャパンディスプレイ 表示装置
US10546847B2 (en) 2015-03-27 2020-01-28 Fairchild Semiconductor Corporation Substrate interposer on a leadframe
US9728510B2 (en) 2015-04-10 2017-08-08 Analog Devices, Inc. Cavity package with composite substrate
JP6221184B2 (ja) * 2015-07-21 2017-11-01 本田技研工業株式会社 自動二輪車の車体フレーム構造
US9805955B1 (en) 2015-11-10 2017-10-31 UTAC Headquarters Pte. Ltd. Semiconductor package with multiple molding routing layers and a method of manufacturing the same
JP2017147272A (ja) 2016-02-15 2017-08-24 ローム株式会社 半導体装置およびその製造方法、ならびに、半導体装置の製造に使用されるリードフレーム中間体
US10276477B1 (en) 2016-05-20 2019-04-30 UTAC Headquarters Pte. Ltd. Semiconductor package with multiple stacked leadframes and a method of manufacturing the same
US11094633B2 (en) * 2016-06-30 2021-08-17 Intel Corporation Bridge die design for high bandwidth memory interface
JP6644978B2 (ja) * 2016-07-25 2020-02-12 大口マテリアル株式会社 半導体素子搭載用基板及び半導体装置、並びにそれらの製造方法
US9972558B1 (en) 2017-04-04 2018-05-15 Stmicroelectronics, Inc. Leadframe package with side solder ball contact and method of manufacturing

Family Cites Families (80)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5468994A (en) * 1992-12-10 1995-11-21 Hewlett-Packard Company High pin count package for semiconductor device
JP2735509B2 (ja) 1994-08-29 1998-04-02 アナログ デバイセス インコーポレーテッド 改善された熱放散を備えたｉｃパッケージ
US5661337A (en) * 1995-11-07 1997-08-26 Vlsi Technology, Inc. Technique for improving bonding strength of leadframe to substrate in semiconductor IC chip packages
US5866939A (en) * 1996-01-21 1999-02-02 Anam Semiconductor Inc. Lead end grid array semiconductor package
CN1222252A (zh) * 1996-04-18 1999-07-07 德塞拉股份有限公司 制造半导体封装的方法
US6001671A (en) 1996-04-18 1999-12-14 Tessera, Inc. Methods for manufacturing a semiconductor package having a sacrificial layer
SG60102A1 (en) * 1996-08-13 1999-02-22 Sony Corp Lead frame semiconductor package having the same and method for manufacturing the same
US5977615A (en) * 1996-12-24 1999-11-02 Matsushita Electronics Corporation Lead frame, method of manufacturing lead frame, semiconductor device and method of manufacturing semiconductor device
JPH10200009A (ja) * 1997-01-08 1998-07-31 Dainippon Printing Co Ltd リードフレーム部材とリードフレーム部材の製造方法
US6670222B1 (en) * 1997-06-14 2003-12-30 Jds Uniphase Corporation Texturing of a die pad surface for enhancing bonding strength in the surface attachment
KR100300666B1 (ko) * 1997-08-04 2001-10-27 기타지마 요시토시 수지밀봉형반도체장치와거기에사용되는회로부재및회로부재의제조방법
JPH1168006A (ja) * 1997-08-19 1999-03-09 Mitsubishi Electric Corp リードフレーム及びこれを用いた半導体装置及びこれらの製造方法
JP3884552B2 (ja) * 1998-01-06 2007-02-21 大日本印刷株式会社 半導体装置とそれに用いられる回路部材および半導体装置の製造方法
US6498099B1 (en) * 1998-06-10 2002-12-24 Asat Ltd. Leadless plastic chip carrier with etch back pad singulation
US6229200B1 (en) * 1998-06-10 2001-05-08 Asat Limited Saw-singulated leadless plastic chip carrier
US7247526B1 (en) * 1998-06-10 2007-07-24 Asat Ltd. Process for fabricating an integrated circuit package
US7049177B1 (en) * 2004-01-28 2006-05-23 Asat Ltd. Leadless plastic chip carrier with standoff contacts and die attach pad
US6585905B1 (en) * 1998-06-10 2003-07-01 Asat Ltd. Leadless plastic chip carrier with partial etch die attach pad
US7270867B1 (en) * 1998-06-10 2007-09-18 Asat Ltd. Leadless plastic chip carrier
US6294100B1 (en) * 1998-06-10 2001-09-25 Asat Ltd Exposed die leadless plastic chip carrier
JP3764587B2 (ja) * 1998-06-30 2006-04-12 富士通株式会社 半導体装置の製造方法
US6281568B1 (en) * 1998-10-21 2001-08-28 Amkor Technology, Inc. Plastic integrated circuit device package and leadframe having partially undercut leads and die pad
JP3780122B2 (ja) 1999-07-07 2006-05-31 株式会社三井ハイテック 半導体装置の製造方法
JP2001077287A (ja) * 1999-09-06 2001-03-23 Mitsubishi Electric Corp 半導体装置用リードフレーム
US6548328B1 (en) * 2000-01-31 2003-04-15 Sanyo Electric Co., Ltd. Circuit device and manufacturing method of circuit device
US6306685B1 (en) 2000-02-01 2001-10-23 Advanced Semiconductor Engineering, Inc. Method of molding a bump chip carrier and structure made thereby
US6238952B1 (en) * 2000-02-29 2001-05-29 Advanced Semiconductor Engineering, Inc. Low-pin-count chip package and manufacturing method thereof
US6372539B1 (en) * 2000-03-20 2002-04-16 National Semiconductor Corporation Leadless packaging process using a conductive substrate
JP3759572B2 (ja) * 2000-03-28 2006-03-29 三洋電機株式会社 半導体装置
JP3883784B2 (ja) * 2000-05-24 2007-02-21 三洋電機株式会社 板状体および半導体装置の製造方法
JP3500362B2 (ja) * 2001-02-14 2004-02-23 松下電器産業株式会社 樹脂封止型半導体装置及びその製造方法
US6545347B2 (en) * 2001-03-06 2003-04-08 Asat, Limited Enhanced leadless chip carrier
JP3470111B2 (ja) * 2001-06-28 2003-11-25 松下電器産業株式会社 樹脂封止型半導体装置の製造方法
SG120858A1 (en) * 2001-08-06 2006-04-26 Micron Technology Inc Quad flat no-lead (qfn) grid array package, methodof making and memory module and computer system including same
US7102216B1 (en) * 2001-08-17 2006-09-05 Amkor Technology, Inc. Semiconductor package and leadframe with horizontal leads spaced in the vertical direction and method of making
US6664615B1 (en) * 2001-11-20 2003-12-16 National Semiconductor Corporation Method and apparatus for lead-frame based grid array IC packaging
JP4173346B2 (ja) * 2001-12-14 2008-10-29 株式会社ルネサステクノロジ 半導体装置
JP2005522863A (ja) 2002-04-11 2005-07-28 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ 半導体デバイス及びその製造方法
SG105544A1 (en) 2002-04-19 2004-08-27 Micron Technology Inc Ultrathin leadframe bga circuit package
US6812552B2 (en) * 2002-04-29 2004-11-02 Advanced Interconnect Technologies Limited Partially patterned lead frames and methods of making and using the same in semiconductor packaging
US6777265B2 (en) 2002-04-29 2004-08-17 Advanced Interconnect Technologies Limited Partially patterned lead frames and methods of making and using the same in semiconductor packaging
US7799611B2 (en) * 2002-04-29 2010-09-21 Unisem (Mauritius) Holdings Limited Partially patterned lead frames and methods of making and using the same in semiconductor packaging
US6940154B2 (en) * 2002-06-24 2005-09-06 Asat Limited Integrated circuit package and method of manufacturing the integrated circuit package
JP2004071670A (ja) * 2002-08-02 2004-03-04 Fuji Photo Film Co Ltd Ｉｃパッケージ、接続構造、および電子機器
US7309923B2 (en) 2003-06-16 2007-12-18 Sandisk Corporation Integrated circuit package having stacked integrated circuits and method therefor
JP2004007022A (ja) * 2003-09-30 2004-01-08 Sanyo Electric Co Ltd 半導体装置
US7880282B2 (en) 2003-12-18 2011-02-01 Rf Module & Optical Design Ltd. Semiconductor package with integrated heatsink and electromagnetic shield
JP2005303039A (ja) * 2004-04-13 2005-10-27 Matsushita Electric Ind Co Ltd 半導体装置及び半導体装置の製造方法
KR101070890B1 (ko) * 2004-04-16 2011-10-06 삼성테크윈 주식회사 다열리드형 반도체 팩키지 제조 방법
US7411289B1 (en) * 2004-06-14 2008-08-12 Asat Ltd. Integrated circuit package with partially exposed contact pads and process for fabricating the same
US6995458B1 (en) * 2004-06-17 2006-02-07 Mindspeed Technologies, Inc. Cavity down no lead package
US7064419B1 (en) * 2004-06-18 2006-06-20 National Semiconductor Corporation Die attach region for use in a micro-array integrated circuit package
US7186588B1 (en) * 2004-06-18 2007-03-06 National Semiconductor Corporation Method of fabricating a micro-array integrated circuit package
US7095096B1 (en) * 2004-08-16 2006-08-22 National Semiconductor Corporation Microarray lead frame
US7161232B1 (en) * 2004-09-14 2007-01-09 National Semiconductor Corporation Apparatus and method for miniature semiconductor packages
US7217991B1 (en) * 2004-10-22 2007-05-15 Amkor Technology, Inc. Fan-in leadframe semiconductor package
JP4091050B2 (ja) * 2005-01-31 2008-05-28 株式会社三井ハイテック 半導体装置の製造方法
US20080258273A1 (en) * 2005-04-07 2008-10-23 Jiangsu Changjiang Electronics Technology Co., Ltd Package Structure With Flat Bumps For Electronic Device and Method of Manufacture the Same
KR100618898B1 (ko) 2005-05-24 2006-09-01 삼성전자주식회사 리드 본딩시 크랙을 방지하는 테이프 패키지
KR101146973B1 (ko) * 2005-06-27 2012-05-22 페어차일드코리아반도체 주식회사 패키지 프레임 및 그를 이용한 반도체 패키지
JP3947750B2 (ja) 2005-07-25 2007-07-25 株式会社三井ハイテック 半導体装置の製造方法及び半導体装置
JP4032063B2 (ja) 2005-08-10 2008-01-16 株式会社三井ハイテック 半導体装置の製造方法
US8003444B2 (en) * 2005-08-10 2011-08-23 Mitsui High-Tec, Inc. Semiconductor device and manufacturing method thereof
US7361977B2 (en) 2005-08-15 2008-04-22 Texas Instruments Incorporated Semiconductor assembly and packaging for high current and low inductance
CN100485893C (zh) 2005-09-09 2009-05-06 鸿富锦精密工业（深圳）有限公司 影像感测芯片封装的制程和结构
US7410830B1 (en) * 2005-09-26 2008-08-12 Asat Ltd Leadless plastic chip carrier and method of fabricating same
US8163604B2 (en) * 2005-10-13 2012-04-24 Stats Chippac Ltd. Integrated circuit package system using etched leadframe
JP4199774B2 (ja) * 2006-02-09 2008-12-17 京セラ株式会社 電子部品搭載構造体
CN101601133B (zh) * 2006-10-27 2011-08-10 宇芯（毛里求斯）控股有限公司 部分图案化的引线框以及在半导体封装中制造和使用其的方法
US7834435B2 (en) 2006-12-27 2010-11-16 Mediatek Inc. Leadframe with extended pad segments between leads and die pad, and leadframe package using the same
JP5543058B2 (ja) * 2007-08-06 2014-07-09 ピーエスフォー ルクスコ エスエイアールエル 半導体装置の製造方法
US7671452B1 (en) * 2007-08-17 2010-03-02 National Semiconductor Corporation Microarray package with plated contact pedestals
CN100464415C (zh) * 2007-09-13 2009-02-25 江苏长电科技股份有限公司 半导体器件无脚封装结构及其封装工艺
US7749809B2 (en) * 2007-12-17 2010-07-06 National Semiconductor Corporation Methods and systems for packaging integrated circuits
US8084299B2 (en) * 2008-02-01 2011-12-27 Infineon Technologies Ag Semiconductor device package and method of making a semiconductor device package
US7786557B2 (en) * 2008-05-19 2010-08-31 Mediatek Inc. QFN Semiconductor package
US8022516B2 (en) * 2008-08-13 2011-09-20 Atmel Corporation Metal leadframe package with secure feature
US7888259B2 (en) 2008-08-19 2011-02-15 Ati Technologies Ulc Integrated circuit package employing predetermined three-dimensional solder pad surface and method for making same
MY163911A (en) 2009-03-06 2017-11-15 Shenzhen Standarad Patent & Trademark Agent Ltd Leadless integrated circuit package having high density contacts
CN201655791U (zh) * 2009-06-04 2010-11-24 李同乐 高密度接点的无引脚集成电路元件

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KR20100121575A (ko) 2010-11-18
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SG172749A1 (en) 2011-08-29
US8497159B2 (en) 2013-07-30
US9337095B2 (en) 2016-05-10
CN101826501B (zh) 2011-12-21
TW201034151A (en) 2010-09-16
JP2013080957A (ja) 2013-05-02
US20120045870A1 (en) 2012-02-23
JP2011517069A (ja) 2011-05-26
TWM382576U (en) 2010-06-11
JP5524322B2 (ja) 2014-06-18
US20130288432A1 (en) 2013-10-31
EP2248161A4 (en) 2014-01-01
WO2010099673A1 (en) 2010-09-10
CN101826501A (zh) 2010-09-08
EP2248161A1 (en) 2010-11-10
KR101088554B1 (ko) 2011-12-05
US8072053B2 (en) 2011-12-06

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