TWI624949B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

Info

Publication number
TWI624949B
TWI624949B TW106103708A TW106103708A TWI624949B TW I624949 B TWI624949 B TW I624949B TW 106103708 A TW106103708 A TW 106103708A TW 106103708 A TW106103708 A TW 106103708A TW I624949 B TWI624949 B TW I624949B
Authority
TW
Taiwan
Prior art keywords
film
oxide
oxide film
oxide semiconductor
electrode
Prior art date
Application number
TW106103708A
Other languages
English (en)
Chinese (zh)
Other versions
TW201733124A (zh
Inventor
徳永肇
肥塚純一
岡崎健一
山崎舜平
Original Assignee
半導體能源研究所股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 半導體能源研究所股份有限公司 filed Critical 半導體能源研究所股份有限公司
Publication of TW201733124A publication Critical patent/TW201733124A/zh
Application granted granted Critical
Publication of TWI624949B publication Critical patent/TWI624949B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6757—Thin-film transistors [TFT] characterised by the structure of the channel, e.g. transverse or longitudinal shape or doping profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/40—Crystalline structures
    • H10D62/402—Amorphous materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/86—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group II-VI materials, e.g. ZnO

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Theoretical Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mathematical Physics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Human Computer Interaction (AREA)
  • Optics & Photonics (AREA)
  • Thin Film Transistor (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
TW106103708A 2012-11-30 2013-11-18 半導體裝置 TWI624949B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2012-261919 2012-11-30
JP2012261919 2012-11-30

Publications (2)

Publication Number Publication Date
TW201733124A TW201733124A (zh) 2017-09-16
TWI624949B true TWI624949B (zh) 2018-05-21

Family

ID=50821635

Family Applications (2)

Application Number Title Priority Date Filing Date
TW106103708A TWI624949B (zh) 2012-11-30 2013-11-18 半導體裝置
TW102141893A TWI582993B (zh) 2012-11-30 2013-11-18 半導體裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102141893A TWI582993B (zh) 2012-11-30 2013-11-18 半導體裝置

Country Status (6)

Country Link
US (2) US9324810B2 (enExample)
JP (1) JP6278671B2 (enExample)
KR (1) KR102232624B1 (enExample)
CN (1) CN103855224B (enExample)
DE (1) DE102013224333A1 (enExample)
TW (2) TWI624949B (enExample)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6386323B2 (ja) 2013-10-04 2018-09-05 株式会社半導体エネルギー研究所 半導体装置
JP2016001712A (ja) * 2013-11-29 2016-01-07 株式会社半導体エネルギー研究所 半導体装置の作製方法
US9461179B2 (en) * 2014-07-11 2016-10-04 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor device (TFT) comprising stacked oxide semiconductor layers and having a surrounded channel structure
US20160155803A1 (en) * 2014-11-28 2016-06-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor Device, Method for Manufacturing the Semiconductor Device, and Display Device Including the Semiconductor Device
JP6357665B2 (ja) * 2014-12-05 2018-07-18 株式会社Ｊｏｌｅｄ 薄膜トランジスタ基板及びその製造方法
US9768317B2 (en) * 2014-12-08 2017-09-19 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, manufacturing method of semiconductor device, and electronic device
CN107408579B (zh) 2015-03-03 2021-04-02 株式会社半导体能源研究所 半导体装置、该半导体装置的制造方法或包括该半导体装置的显示装置
TWI721026B (zh) * 2015-10-30 2021-03-11 日商半導體能源研究所股份有限公司 電容器、半導體裝置、模組以及電子裝置的製造方法
JP2017123427A (ja) * 2016-01-08 2017-07-13 株式会社ジャパンディスプレイ 薄膜トランジスタ
JP6429816B2 (ja) * 2016-02-17 2018-11-28 三菱電機株式会社 薄膜トランジスタおよびその製造方法、薄膜トランジスタ基板、液晶表示装置
EP3423895B1 (de) * 2016-03-02 2021-04-28 PA.Cotte Family Holding GmbH Verfahren zur herstellung einer anzeigevorrichtung und anzeigevorrichtung
TW201813095A (zh) * 2016-07-11 2018-04-01 半導體能源硏究所股份有限公司 半導體裝置
US10504925B2 (en) * 2016-08-08 2019-12-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2018180968A1 (ja) * 2017-03-30 2018-10-04 シャープ株式会社 アクティブマトリクス基板および液晶表示パネル
JP6706638B2 (ja) * 2018-03-07 2020-06-10 シャープ株式会社 半導体装置およびその製造方法
CN113838938A (zh) * 2020-06-24 2021-12-24 京东方科技集团股份有限公司 薄膜晶体管及其制作方法、阵列基板以及电子装置
CN113838801B (zh) * 2020-06-24 2024-10-22 京东方科技集团股份有限公司 半导体基板的制造方法和半导体基板
CN114373802A (zh) * 2021-12-09 2022-04-19 广州华星光电半导体显示技术有限公司 Tft基板、液晶显示面板及显示装置

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110140100A1 (en) * 2009-12-10 2011-06-16 Masahiro Takata Thin-film transistor, method of producing the same, and devices provided with the same
US20120138922A1 (en) * 2010-12-03 2012-06-07 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device

Family Cites Families (186)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2011102A (en) 1934-01-24 1935-08-13 Robeson Rochester Corp Coffee making apparatus
JPS60198861A (ja) 1984-03-23 1985-10-08 Fujitsu Ltd 薄膜トランジスタ
JPH0244256B2 (ja) 1987-01-28 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn2o5deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244258B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn3o6deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPS63210023A (ja) 1987-02-24 1988-08-31 Natl Inst For Res In Inorg Mater ＩｎＧａＺｎ↓４Ｏ↓７で示される六方晶系の層状構造を有する化合物およびその製造法
JPH0244260B2 (ja) 1987-02-24 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn5o8deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244262B2 (ja) 1987-02-27 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn6o9deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH0244263B2 (ja) 1987-04-22 1990-10-03 Kagaku Gijutsucho Mukizaishitsu Kenkyushocho Ingazn7o10deshimesarerurotsuhoshokeinosojokozoojusurukagobutsuoyobisonoseizoho
JPH05251705A (ja) 1992-03-04 1993-09-28 Fuji Xerox Co Ltd 薄膜トランジスタ
JP3479375B2 (ja) 1995-03-27 2003-12-15 科学技術振興事業団 亜酸化銅等の金属酸化物半導体による薄膜トランジスタとｐｎ接合を形成した金属酸化物半導体装置およびそれらの製造方法
EP0820644B1 (en) 1995-08-03 2005-08-24 Koninklijke Philips Electronics N.V. Semiconductor device provided with transparent switching element
JP3625598B2 (ja) 1995-12-30 2005-03-02 三星電子株式会社 液晶表示装置の製造方法
KR100269518B1 (ko) 1997-12-29 2000-10-16 구본준 박막트랜지스터 제조방법
JP4170454B2 (ja) 1998-07-24 2008-10-22 Ｈｏｙａ株式会社 透明導電性酸化物薄膜を有する物品及びその製造方法
JP2000150861A (ja) 1998-11-16 2000-05-30 Tdk Corp 酸化物薄膜
JP3276930B2 (ja) 1998-11-17 2002-04-22 科学技術振興事業団 トランジスタ及び半導体装置
TW460731B (en) 1999-09-03 2001-10-21 Ind Tech Res Inst Electrode structure and production method of wide viewing angle LCD
JP4089858B2 (ja) 2000-09-01 2008-05-28 国立大学法人東北大学 半導体デバイス
KR20020038482A (ko) 2000-11-15 2002-05-23 모리시타 요이찌 박막 트랜지스터 어레이, 그 제조방법 및 그것을 이용한표시패널
JP3997731B2 (ja) 2001-03-19 2007-10-24 富士ゼロックス株式会社 基材上に結晶性半導体薄膜を形成する方法
JP2002289859A (ja) 2001-03-23 2002-10-04 Minolta Co Ltd 薄膜トランジスタ
JP4090716B2 (ja) 2001-09-10 2008-05-28 雅司 川崎 薄膜トランジスタおよびマトリクス表示装置
JP3925839B2 (ja) 2001-09-10 2007-06-06 シャープ株式会社 半導体記憶装置およびその試験方法
WO2003040441A1 (fr) 2001-11-05 2003-05-15 Japan Science And Technology Agency Film mince monocristallin homologue a super-reseau naturel, procede de preparation et dispositif dans lequel est utilise ledit film mince monocristallin
JP4164562B2 (ja) 2002-09-11 2008-10-15 独立行政法人科学技術振興機構 ホモロガス薄膜を活性層として用いる透明薄膜電界効果型トランジスタ
JP4083486B2 (ja) 2002-02-21 2008-04-30 独立行政法人科学技術振興機構 ＬｎＣｕＯ（Ｓ，Ｓｅ，Ｔｅ）単結晶薄膜の製造方法
CN1445821A (zh) 2002-03-15 2003-10-01 三洋电机株式会社 ZnO膜和ZnO半导体层的形成方法、半导体元件及其制造方法
JP2003273361A (ja) 2002-03-15 2003-09-26 Sharp Corp 半導体装置およびその製造方法
JP3933591B2 (ja) 2002-03-26 2007-06-20 淳二 城戸 有機エレクトロルミネッセント素子
US7339187B2 (en) 2002-05-21 2008-03-04 State Of Oregon Acting By And Through The Oregon State Board Of Higher Education On Behalf Of Oregon State University Transistor structures
US6933241B2 (en) 2002-06-06 2005-08-23 Nec Corporation Method for forming pattern of stacked film
JP2004022625A (ja) 2002-06-13 2004-01-22 Murata Mfg Co Ltd 半導体デバイス及び該半導体デバイスの製造方法
US7105868B2 (en) 2002-06-24 2006-09-12 Cermet, Inc. High-electron mobility transistor with zinc oxide
US7067843B2 (en) 2002-10-11 2006-06-27 E. I. Du Pont De Nemours And Company Transparent oxide semiconductor thin film transistors
JP4166105B2 (ja) 2003-03-06 2008-10-15 シャープ株式会社 半導体装置およびその製造方法
JP2004273732A (ja) 2003-03-07 2004-09-30 Sharp Corp アクティブマトリクス基板およびその製造方法
JP4108633B2 (ja) 2003-06-20 2008-06-25 シャープ株式会社 薄膜トランジスタおよびその製造方法ならびに電子デバイス
US7262463B2 (en) 2003-07-25 2007-08-28 Hewlett-Packard Development Company, L.P. Transistor including a deposited channel region having a doped portion
US7297977B2 (en) 2004-03-12 2007-11-20 Hewlett-Packard Development Company, L.P. Semiconductor device
US7145174B2 (en) 2004-03-12 2006-12-05 Hewlett-Packard Development Company, Lp. Semiconductor device
CN1998087B (zh) 2004-03-12 2014-12-31 独立行政法人科学技术振兴机构 非晶形氧化物和薄膜晶体管
US7282782B2 (en) 2004-03-12 2007-10-16 Hewlett-Packard Development Company, L.P. Combined binary oxide semiconductor device
KR101152935B1 (ko) 2004-05-21 2012-06-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광소자 및 발광장치
US7211825B2 (en) 2004-06-14 2007-05-01 Yi-Chi Shih Indium oxide-based thin film transistors and circuits
JP2006100760A (ja) 2004-09-02 2006-04-13 Casio Comput Co Ltd 薄膜トランジスタおよびその製造方法
US7285501B2 (en) 2004-09-17 2007-10-23 Hewlett-Packard Development Company, L.P. Method of forming a solution processed device
US7298084B2 (en) 2004-11-02 2007-11-20 3M Innovative Properties Company Methods and displays utilizing integrated zinc oxide row and column drivers in conjunction with organic light emitting diodes
US7829444B2 (en) 2004-11-10 2010-11-09 Canon Kabushiki Kaisha Field effect transistor manufacturing method
US7863611B2 (en) 2004-11-10 2011-01-04 Canon Kabushiki Kaisha Integrated circuits utilizing amorphous oxides
US7453065B2 (en) 2004-11-10 2008-11-18 Canon Kabushiki Kaisha Sensor and image pickup device
KR20070085879A (ko) 2004-11-10 2007-08-27 캐논 가부시끼가이샤 발광 장치
US7791072B2 (en) 2004-11-10 2010-09-07 Canon Kabushiki Kaisha Display
CA2585190A1 (en) 2004-11-10 2006-05-18 Canon Kabushiki Kaisha Amorphous oxide and field effect transistor
JP5126729B2 (ja) 2004-11-10 2013-01-23 キヤノン株式会社 画像表示装置
US7868326B2 (en) 2004-11-10 2011-01-11 Canon Kabushiki Kaisha Field effect transistor
US7579224B2 (en) 2005-01-21 2009-08-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing a thin film semiconductor device
TWI569441B (zh) 2005-01-28 2017-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
TWI472037B (zh) 2005-01-28 2015-02-01 半導體能源研究所股份有限公司 半導體裝置，電子裝置，和半導體裝置的製造方法
US7858451B2 (en) 2005-02-03 2010-12-28 Semiconductor Energy Laboratory Co., Ltd. Electronic device, semiconductor device and manufacturing method thereof
US7948171B2 (en) 2005-02-18 2011-05-24 Semiconductor Energy Laboratory Co., Ltd. Light emitting device
US20060197092A1 (en) 2005-03-03 2006-09-07 Randy Hoffman System and method for forming conductive material on a substrate
US8681077B2 (en) 2005-03-18 2014-03-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device, and display device, driving method and electronic apparatus thereof
US7544967B2 (en) 2005-03-28 2009-06-09 Massachusetts Institute Of Technology Low voltage flexible organic/transparent transistor for selective gas sensing, photodetecting and CMOS device applications
US7645478B2 (en) 2005-03-31 2010-01-12 3M Innovative Properties Company Methods of making displays
US8300031B2 (en) 2005-04-20 2012-10-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising transistor having gate and drain connected through a current-voltage conversion element
JP2006344849A (ja) 2005-06-10 2006-12-21 Casio Comput Co Ltd 薄膜トランジスタ
US7402506B2 (en) 2005-06-16 2008-07-22 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7691666B2 (en) 2005-06-16 2010-04-06 Eastman Kodak Company Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby
US7507618B2 (en) 2005-06-27 2009-03-24 3M Innovative Properties Company Method for making electronic devices using metal oxide nanoparticles
KR100711890B1 (ko) 2005-07-28 2007-04-25 삼성에스디아이 주식회사 유기 발광표시장치 및 그의 제조방법
JP2007059128A (ja) 2005-08-23 2007-03-08 Canon Inc 有機ｅｌ表示装置およびその製造方法
US20070044714A1 (en) 2005-08-31 2007-03-01 Applied Materials, Inc. Method and apparatus for maintaining a cross sectional shape of a diffuser during processing
JP5116225B2 (ja) 2005-09-06 2013-01-09 キヤノン株式会社 酸化物半導体デバイスの製造方法
JP4280736B2 (ja) 2005-09-06 2009-06-17 キヤノン株式会社 半導体素子
JP2007073705A (ja) 2005-09-06 2007-03-22 Canon Inc 酸化物半導体チャネル薄膜トランジスタおよびその製造方法
JP4850457B2 (ja) 2005-09-06 2012-01-11 キヤノン株式会社 薄膜トランジスタ及び薄膜ダイオード
EP1998373A3 (en) 2005-09-29 2012-10-31 Semiconductor Energy Laboratory Co, Ltd. Semiconductor device having oxide semiconductor layer and manufacturing method thereof
JP5078246B2 (ja) 2005-09-29 2012-11-21 株式会社半導体エネルギー研究所 半導体装置、及び半導体装置の作製方法
JP5037808B2 (ja) 2005-10-20 2012-10-03 キヤノン株式会社 アモルファス酸化物を用いた電界効果型トランジスタ、及び該トランジスタを用いた表示装置
WO2007058329A1 (en) 2005-11-15 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR100690925B1 (ko) 2005-12-01 2007-03-09 삼성전자주식회사 나노 크리스탈 비휘발성 반도체 집적 회로 장치 및 그 제조방법
TWI292281B (en) 2005-12-29 2008-01-01 Ind Tech Res Inst Pixel structure of active organic light emitting diode and method of fabricating the same
US7867636B2 (en) 2006-01-11 2011-01-11 Murata Manufacturing Co., Ltd. Transparent conductive film and method for manufacturing the same
JP4977478B2 (ja) 2006-01-21 2012-07-18 三星電子株式会社 ＺｎＯフィルム及びこれを用いたＴＦＴの製造方法
US7576394B2 (en) 2006-02-02 2009-08-18 Kochi Industrial Promotion Center Thin film transistor including low resistance conductive thin films and manufacturing method thereof
US7977169B2 (en) 2006-02-15 2011-07-12 Kochi Industrial Promotion Center Semiconductor device including active layer made of zinc oxide with controlled orientations and manufacturing method thereof
KR20070101595A (ko) 2006-04-11 2007-10-17 삼성전자주식회사 ＺｎＯ ＴＦＴ
US20070252928A1 (en) 2006-04-28 2007-11-01 Toppan Printing Co., Ltd. Structure, transmission type liquid crystal display, reflection type display and manufacturing method thereof
JP5028033B2 (ja) 2006-06-13 2012-09-19 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4609797B2 (ja) 2006-08-09 2011-01-12 Ｎｅｃ液晶テクノロジー株式会社 薄膜デバイス及びその製造方法
JP4999400B2 (ja) 2006-08-09 2012-08-15 キヤノン株式会社 酸化物半導体膜のドライエッチング方法
JP4332545B2 (ja) 2006-09-15 2009-09-16 キヤノン株式会社 電界効果型トランジスタ及びその製造方法
JP4274219B2 (ja) 2006-09-27 2009-06-03 セイコーエプソン株式会社 電子デバイス、有機エレクトロルミネッセンス装置、有機薄膜半導体装置
JP5164357B2 (ja) 2006-09-27 2013-03-21 キヤノン株式会社 半導体装置及び半導体装置の製造方法
US7622371B2 (en) 2006-10-10 2009-11-24 Hewlett-Packard Development Company, L.P. Fused nanocrystal thin film semiconductor and method
US7772021B2 (en) 2006-11-29 2010-08-10 Samsung Electronics Co., Ltd. Flat panel displays comprising a thin-film transistor having a semiconductive oxide in its channel and methods of fabricating the same for use in flat panel displays
JP2008140684A (ja) 2006-12-04 2008-06-19 Toppan Printing Co Ltd カラーｅｌディスプレイおよびその製造方法
US8143115B2 (en) 2006-12-05 2012-03-27 Canon Kabushiki Kaisha Method for manufacturing thin film transistor using oxide semiconductor and display apparatus
KR101303578B1 (ko) 2007-01-05 2013-09-09 삼성전자주식회사 박막 식각 방법
US8207063B2 (en) 2007-01-26 2012-06-26 Eastman Kodak Company Process for atomic layer deposition
KR101312259B1 (ko) 2007-02-09 2013-09-25 삼성전자주식회사 박막 트랜지스터 및 그 제조방법
JP5121254B2 (ja) 2007-02-28 2013-01-16 キヤノン株式会社 薄膜トランジスタおよび表示装置
KR100851215B1 (ko) 2007-03-14 2008-08-07 삼성에스디아이 주식회사 박막 트랜지스터 및 이를 이용한 유기 전계 발광표시장치
JP4727684B2 (ja) 2007-03-27 2011-07-20 富士フイルム株式会社 薄膜電界効果型トランジスタおよびそれを用いた表示装置
JP2008276211A (ja) 2007-04-05 2008-11-13 Fujifilm Corp 有機電界発光表示装置およびパターニング方法
US7795613B2 (en) 2007-04-17 2010-09-14 Toppan Printing Co., Ltd. Structure with transistor
KR101325053B1 (ko) 2007-04-18 2013-11-05 삼성디스플레이 주식회사 박막 트랜지스터 기판 및 이의 제조 방법
KR20080094300A (ko) 2007-04-19 2008-10-23 삼성전자주식회사 박막 트랜지스터 및 그 제조 방법과 박막 트랜지스터를포함하는 평판 디스플레이
KR101334181B1 (ko) 2007-04-20 2013-11-28 삼성전자주식회사 선택적으로 결정화된 채널층을 갖는 박막 트랜지스터 및 그제조 방법
CN101663762B (zh) 2007-04-25 2011-09-21 佳能株式会社 氧氮化物半导体
KR101345376B1 (ko) 2007-05-29 2013-12-24 삼성전자주식회사 ＺｎＯ 계 박막 트랜지스터 및 그 제조방법
JP5215158B2 (ja) 2007-12-17 2013-06-19 富士フイルム株式会社 無機結晶性配向膜及びその製造方法、半導体デバイス
US8586979B2 (en) 2008-02-01 2013-11-19 Samsung Electronics Co., Ltd. Oxide semiconductor transistor and method of manufacturing the same
JP4555358B2 (ja) 2008-03-24 2010-09-29 富士フイルム株式会社 薄膜電界効果型トランジスタおよび表示装置
KR100941850B1 (ko) 2008-04-03 2010-02-11 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
US20090278120A1 (en) 2008-05-09 2009-11-12 Korea Institute Of Science And Technology Thin Film Transistor
JP5305730B2 (ja) 2008-05-12 2013-10-02 キヤノン株式会社 半導体素子の製造方法ならびにその製造装置
KR100963026B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
KR100963027B1 (ko) 2008-06-30 2010-06-10 삼성모바일디스플레이주식회사 박막 트랜지스터, 그의 제조 방법 및 박막 트랜지스터를구비하는 평판 표시 장치
JP5608347B2 (ja) 2008-08-08 2014-10-15 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法
JP5480554B2 (ja) 2008-08-08 2014-04-23 株式会社半導体エネルギー研究所 半導体装置
JP5345456B2 (ja) 2008-08-14 2013-11-20 富士フイルム株式会社 薄膜電界効果型トランジスタ
JP5627071B2 (ja) 2008-09-01 2014-11-19 株式会社半導体エネルギー研究所 半導体装置の作製方法
KR101545460B1 (ko) * 2008-09-12 2015-08-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 생산 방법
JP4623179B2 (ja) 2008-09-18 2011-02-02 ソニー株式会社 薄膜トランジスタおよびその製造方法
JP5451280B2 (ja) 2008-10-09 2014-03-26 キヤノン株式会社 ウルツ鉱型結晶成長用基板およびその製造方法ならびに半導体装置
TWI536577B (zh) 2008-11-13 2016-06-01 半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI606593B (zh) 2008-11-28 2017-11-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
KR101343570B1 (ko) 2008-12-18 2013-12-20 한국전자통신연구원 보론이 도핑된 산화물 반도체 박막을 적용한 박막 트랜지스터 및 그의 제조방법
KR101648927B1 (ko) * 2009-01-16 2016-08-17 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
JP4752927B2 (ja) 2009-02-09 2011-08-17 ソニー株式会社 薄膜トランジスタおよび表示装置
JP5371467B2 (ja) 2009-02-12 2013-12-18 富士フイルム株式会社 電界効果型トランジスタ及び電界効果型トランジスタの製造方法
US8247276B2 (en) 2009-02-20 2012-08-21 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor, method for manufacturing the same, and semiconductor device
US8704216B2 (en) 2009-02-27 2014-04-22 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR101671210B1 (ko) 2009-03-06 2016-11-01 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치의 제작 방법
TWI535023B (zh) 2009-04-16 2016-05-21 半導體能源研究所股份有限公司 半導體裝置和其製造方法
JP4415062B1 (ja) 2009-06-22 2010-02-17 富士フイルム株式会社 薄膜トランジスタ及び薄膜トランジスタの製造方法
JP4571221B1 (ja) 2009-06-22 2010-10-27 富士フイルム株式会社 Ｉｇｚｏ系酸化物材料及びｉｇｚｏ系酸化物材料の製造方法
JP2011054812A (ja) 2009-09-03 2011-03-17 Hitachi Ltd 薄膜トランジスタおよびその製造方法
WO2011048929A1 (en) 2009-10-21 2011-04-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
KR102089200B1 (ko) 2009-11-28 2020-03-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제조 방법
JP2011138934A (ja) 2009-12-28 2011-07-14 Sony Corp 薄膜トランジスタ、表示装置および電子機器
CN105023942B (zh) 2009-12-28 2018-11-02 株式会社半导体能源研究所 制造半导体装置的方法
IN2012DN05057A (enExample) 2009-12-28 2015-10-09 Semiconductor Energy Lab
JP5496745B2 (ja) * 2010-03-31 2014-05-21 富士フイルム株式会社 薄膜電界効果型トランジスタおよびその製造方法
KR102276768B1 (ko) 2010-04-02 2021-07-13 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN106098788B (zh) 2010-04-02 2020-10-16 株式会社半导体能源研究所 半导体装置
US8884282B2 (en) 2010-04-02 2014-11-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9147768B2 (en) 2010-04-02 2015-09-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor and a metal oxide film
US9196739B2 (en) 2010-04-02 2015-11-24 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including oxide semiconductor film and metal oxide film
US9190522B2 (en) 2010-04-02 2015-11-17 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device having an oxide semiconductor
JP2011222767A (ja) 2010-04-09 2011-11-04 Sony Corp 薄膜トランジスタならびに表示装置および電子機器
WO2011125454A1 (en) 2010-04-09 2011-10-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP5606787B2 (ja) 2010-05-18 2014-10-15 富士フイルム株式会社 薄膜トランジスタの製造方法、並びに、薄膜トランジスタ、イメージセンサー、ｘ線センサー及びｘ線デジタル撮影装置
US8629438B2 (en) * 2010-05-21 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US8779433B2 (en) 2010-06-04 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP2011258804A (ja) * 2010-06-10 2011-12-22 Fujifilm Corp 電界効果型トランジスタ及びその製造方法
CN102959713B (zh) * 2010-07-02 2017-05-10 株式会社半导体能源研究所 半导体装置
TWI565001B (zh) * 2010-07-28 2017-01-01 半導體能源研究所股份有限公司 半導體裝置及半導體裝置的驅動方法
JP5626978B2 (ja) * 2010-09-08 2014-11-19 富士フイルム株式会社 薄膜トランジスタおよびその製造方法、並びにその薄膜トランジスタを備えた装置
EP2428994A1 (en) 2010-09-10 2012-03-14 Applied Materials, Inc. Method and system for depositing a thin-film transistor
US8629496B2 (en) * 2010-11-30 2014-01-14 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI562379B (en) 2010-11-30 2016-12-11 Semiconductor Energy Lab Co Ltd Semiconductor device and method for manufacturing semiconductor device
KR101757443B1 (ko) 2010-12-08 2017-07-13 엘지디스플레이 주식회사 미세 결정 실리콘 박막 트랜지스터와 이를 포함하는 표시장치 및 그 제조 방법
KR101680768B1 (ko) 2010-12-10 2016-11-29 삼성전자주식회사 트랜지스터 및 이를 포함하는 전자장치
JP5731369B2 (ja) 2010-12-28 2015-06-10 株式会社半導体エネルギー研究所 半導体装置の作製方法
WO2012090799A1 (en) 2010-12-28 2012-07-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
KR20130007426A (ko) 2011-06-17 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
KR20190039345A (ko) 2011-06-17 2019-04-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그의 제조 방법
US8748886B2 (en) 2011-07-08 2014-06-10 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing semiconductor device
WO2013179922A1 (en) 2012-05-31 2013-12-05 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
CN107591316B (zh) 2012-05-31 2021-06-08 株式会社半导体能源研究所 半导体装置
US9153699B2 (en) 2012-06-15 2015-10-06 Semiconductor Energy Laboratory Co., Ltd. Thin film transistor with multiple oxide semiconductor layers
US8901557B2 (en) 2012-06-15 2014-12-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
JP6310194B2 (ja) 2012-07-06 2018-04-11 株式会社半導体エネルギー研究所 半導体装置
KR20140009023A (ko) 2012-07-13 2014-01-22 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
US20140027762A1 (en) 2012-07-27 2014-01-30 Semiconductor Energy Laboratory Co. Ltd. Semiconductor device
CN104584229B (zh) 2012-08-10 2018-05-15 株式会社半导体能源研究所 半导体装置及其制造方法
US9929276B2 (en) 2012-08-10 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
JP6220597B2 (ja) 2012-08-10 2017-10-25 株式会社半導体エネルギー研究所 半導体装置
WO2014024808A1 (en) 2012-08-10 2014-02-13 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
KR102171650B1 (ko) 2012-08-10 2020-10-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 그 제작 방법
US9245958B2 (en) 2012-08-10 2016-01-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
TWI782259B (zh) 2012-10-24 2022-11-01 日商半導體能源研究所股份有限公司 半導體裝置及其製造方法
TWI613813B (zh) 2012-11-16 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
KR102164721B1 (ko) 2014-11-19 2020-10-13 삼성전자 주식회사 반도체 장치

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20110140100A1 (en) * 2009-12-10 2011-06-16 Masahiro Takata Thin-film transistor, method of producing the same, and devices provided with the same
US20120138922A1 (en) * 2010-12-03 2012-06-07 Semiconductor Energy Laboratory Co., Ltd. Oxide semiconductor film and semiconductor device

Also Published As

Publication number Publication date
DE102013224333A1 (de) 2014-06-18
CN103855224A (zh) 2014-06-11
US20140151685A1 (en) 2014-06-05
US9865746B2 (en) 2018-01-09
TW201733124A (zh) 2017-09-16
KR20140070411A (ko) 2014-06-10
US9324810B2 (en) 2016-04-26
JP2014131022A (ja) 2014-07-10
TW201427016A (zh) 2014-07-01
US20160197200A1 (en) 2016-07-07
CN103855224B (zh) 2018-11-09
JP6278671B2 (ja) 2018-02-14
TWI582993B (zh) 2017-05-11
KR102232624B1 (ko) 2021-03-25

Similar Documents

Publication Publication Date Title
TWI624949B (zh) 半導體裝置
JP7689232B2 (ja) 半導体装置
JP6974401B2 (ja) 半導体装置
KR102643760B1 (ko) 표시 장치
TWI721916B (zh) 顯示裝置
JP2020057819A (ja) 酸化物半導体層のエッチング方法及びトランジスタの作製方法
JP2018064116A (ja) 半導体装置
TW201413977A (zh) 半導體裝置
TW201117356A (en) Semiconductor device and method for manufacturing the same
JP6542961B2 (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees