TWI559448B - 半導體裝置及其製法 - Google Patents

半導體裝置及其製法 Download PDF

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Publication number
TWI559448B
TWI559448B TW104132154A TW104132154A TWI559448B TW I559448 B TWI559448 B TW I559448B TW 104132154 A TW104132154 A TW 104132154A TW 104132154 A TW104132154 A TW 104132154A TW I559448 B TWI559448 B TW I559448B
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TW
Taiwan
Prior art keywords
layer
insulating layer
semiconductor
film
insulating
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TW104132154A
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English (en)
Chinese (zh)
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TW201601251A (zh
Inventor
山崎舜平
須澤英臣
笹川慎也
倉田求
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半導體能源研究所股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76804—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics by forming tapered via holes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
    • H01L21/76805—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics the opening being a via or contact hole penetrating the underlying conductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6704—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device
    • H10D30/6725—Thin-film transistors [TFT] having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling properties of the device having supplementary regions or layers for improving the flatness of the device
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/124—Insulating layers formed between TFT elements and OLED elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes) consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Semiconductor Memories (AREA)
  • Liquid Crystal (AREA)
  • Electroluminescent Light Sources (AREA)
  • Recrystallisation Techniques (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW104132154A 2007-03-26 2008-03-26 半導體裝置及其製法 TWI559448B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2007078067 2007-03-26

Publications (2)

Publication Number Publication Date
TW201601251A TW201601251A (zh) 2016-01-01
TWI559448B true TWI559448B (zh) 2016-11-21

Family

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Family Applications (2)

Application Number Title Priority Date Filing Date
TW104132154A TWI559448B (zh) 2007-03-26 2008-03-26 半導體裝置及其製法
TW097110806A TWI512888B (zh) 2007-03-26 2008-03-26 半導體裝置及其製法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW097110806A TWI512888B (zh) 2007-03-26 2008-03-26 半導體裝置及其製法

Country Status (5)

Country Link
US (2) US7763981B2 (enExample)
JP (12) JP5512931B2 (enExample)
KR (7) KR101534070B1 (enExample)
CN (2) CN102157566B (enExample)
TW (2) TWI559448B (enExample)

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JP5512930B2 (ja) 2007-03-26 2014-06-04 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8178927B2 (en) * 2008-05-14 2012-05-15 Qimonda Ag Integrated circuits having a contact structure having an elongate structure and methods for manufacturing the same
JP5525224B2 (ja) * 2008-09-30 2014-06-18 株式会社半導体エネルギー研究所 表示装置
JP2011003797A (ja) * 2009-06-19 2011-01-06 Toshiba Corp 半導体装置及びその製造方法
US8780629B2 (en) 2010-01-15 2014-07-15 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
US8207025B2 (en) * 2010-04-09 2012-06-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of semiconductor device
WO2011158319A1 (ja) * 2010-06-14 2011-12-22 ルネサスエレクトロニクス株式会社 半導体装置およびその製造方法
WO2011158704A1 (en) 2010-06-18 2011-12-22 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP5739257B2 (ja) 2010-08-05 2015-06-24 株式会社半導体エネルギー研究所 半導体装置の作製方法
US8946066B2 (en) * 2011-05-11 2015-02-03 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing semiconductor device
WO2012169449A1 (en) 2011-06-08 2012-12-13 Semiconductor Energy Laboratory Co., Ltd. Sputtering target, method for manufacturing sputtering target, and method for forming thin film
WO2013061895A1 (en) 2011-10-28 2013-05-02 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
TWI613824B (zh) 2011-12-23 2018-02-01 半導體能源研究所股份有限公司 半導體裝置
US9112037B2 (en) * 2012-02-09 2015-08-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US8883584B2 (en) * 2012-07-03 2014-11-11 Institute of Microelectronics, Chinese Academy of Sciences Method of manufacturing semiconductor device with well etched spacer
KR102222344B1 (ko) * 2013-05-02 2021-03-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN105190902B (zh) 2013-05-09 2019-01-29 株式会社半导体能源研究所 半导体装置及其制造方法
US9590109B2 (en) 2013-08-30 2017-03-07 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and method for manufacturing the same
SG11201604650SA (en) 2013-12-26 2016-07-28 Semiconductor Energy Lab Semiconductor device
KR102529174B1 (ko) * 2013-12-27 2023-05-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
SG10201912585TA (en) 2014-05-30 2020-02-27 Semiconductor Energy Lab Semiconductor device and method for manufacturing the same
US9831238B2 (en) 2014-05-30 2017-11-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device including insulating film having opening portion and conductive film in the opening portion
US9455337B2 (en) * 2014-06-18 2016-09-27 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102675913B1 (ko) 2016-04-29 2024-06-17 엘지디스플레이 주식회사 백플레인 기판 및 이를 이용한 유기 발광 표시 장치
JP6462035B2 (ja) * 2016-04-29 2019-01-30 エルジー ディスプレイ カンパニー リミテッド バックプレーン基板及びそれを用いた有機発光表示装置
TWI600168B (zh) 2016-11-02 2017-09-21 律勝科技股份有限公司 薄膜電晶體的積層體結構
CN107996002A (zh) * 2016-12-30 2018-05-04 深圳市柔宇科技有限公司 阵列基板及阵列基板制造方法
KR102777988B1 (ko) 2017-10-27 2025-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 발광 소자, 표시 장치, 전자 기기, 및 조명 장치
CN111081773B (zh) * 2018-10-18 2023-03-24 联华电子股份有限公司 氧化物半导体装置以及其制作方法
WO2020189428A1 (ja) 2019-03-15 2020-09-24 三菱マテリアル株式会社 酸化タングステンスパッタリングターゲット
CN113725149B (zh) * 2021-08-30 2023-10-10 长江存储科技有限责任公司 材料的填充方法、半导体结构和3d nand存储器

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