TWI501227B - 半導體裝置 - Google Patents

半導體裝置 Download PDF

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Publication number
TWI501227B
TWI501227B TW099145815A TW99145815A TWI501227B TW I501227 B TWI501227 B TW I501227B TW 099145815 A TW099145815 A TW 099145815A TW 99145815 A TW99145815 A TW 99145815A TW I501227 B TWI501227 B TW I501227B
Authority
TW
Taiwan
Prior art keywords
transistor
source
electrode
insulating layer
electrically connected
Prior art date
Application number
TW099145815A
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English (en)
Chinese (zh)
Other versions
TW201140583A (en
Inventor
Shunpei Yamazaki
Jun Koyama
Kiyoshi Kato
Shuhei Nagatsuka
Takanori Matsuzaki
Hiroki Inoue
Original Assignee
Semiconductor Energy Lab
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Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW201140583A publication Critical patent/TW201140583A/zh
Application granted granted Critical
Publication of TWI501227B publication Critical patent/TWI501227B/zh

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0408—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors
    • G11C16/0425—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells containing floating gate transistors comprising cells containing a merged floating gate and select transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/20—DRAM devices comprising floating-body transistors, e.g. floating-body cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
    • H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
    • H10D30/6733—Multi-gate TFTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H10D30/674—Thin-film transistors [TFT] characterised by the active materials
    • H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
    • H10D30/6756—Amorphous oxide semiconductors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/68—Floating-gate IGFETs
    • H10D30/681—Floating-gate IGFETs having only two programming levels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/69—IGFETs having charge trapping gate insulators, e.g. MNOS transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/80—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00, e.g. integration of IGFETs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
    • H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Thin Film Transistor (AREA)
  • Dram (AREA)
  • Non-Volatile Memory (AREA)
  • Power Engineering (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW099145815A 2009-12-28 2010-12-24 半導體裝置 TWI501227B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2009298891 2009-12-28
JP2010007519 2010-01-15
JP2010160946 2010-07-15

Publications (2)

Publication Number Publication Date
TW201140583A TW201140583A (en) 2011-11-16
TWI501227B true TWI501227B (zh) 2015-09-21

Family

ID=44186325

Family Applications (2)

Application Number Title Priority Date Filing Date
TW099145815A TWI501227B (zh) 2009-12-28 2010-12-24 半導體裝置
TW104121318A TWI575520B (zh) 2009-12-28 2010-12-24 半導體裝置

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW104121318A TWI575520B (zh) 2009-12-28 2010-12-24 半導體裝置

Country Status (5)

Country Link
US (3) US8450783B2 (enExample)
JP (2) JP5604291B2 (enExample)
KR (2) KR101842413B1 (enExample)
TW (2) TWI501227B (enExample)
WO (1) WO2011080998A1 (enExample)

Families Citing this family (73)

* Cited by examiner, † Cited by third party
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KR102748818B1 (ko) * 2009-10-29 2024-12-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
KR101994632B1 (ko) 2009-12-25 2019-07-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
CN102714184B (zh) * 2009-12-28 2016-05-18 株式会社半导体能源研究所 半导体器件
CN102714208B (zh) * 2010-01-15 2015-05-20 株式会社半导体能源研究所 半导体装置
KR101943807B1 (ko) 2010-01-15 2019-01-29 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR101926336B1 (ko) 2010-02-05 2019-03-07 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치
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KR102192753B1 (ko) 2010-03-08 2020-12-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
KR20130007597A (ko) * 2010-03-08 2013-01-18 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 반도체 장치를 제작하는 방법
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JP2012256821A (ja) * 2010-09-13 2012-12-27 Semiconductor Energy Lab Co Ltd 記憶装置
TWI543166B (zh) 2010-09-13 2016-07-21 半導體能源研究所股份有限公司 半導體裝置
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KR102026718B1 (ko) * 2011-01-14 2019-09-30 가부시키가이샤 한도오따이 에네루기 켄큐쇼 기억장치, 반도체 장치, 검출 방법
TWI520273B (zh) 2011-02-02 2016-02-01 半導體能源研究所股份有限公司 半導體儲存裝置
JP6014362B2 (ja) 2011-05-19 2016-10-25 株式会社半導体エネルギー研究所 半導体装置の作製方法
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JP6689062B2 (ja) 2014-12-10 2020-04-28 株式会社半導体エネルギー研究所 半導体装置
JP2016116220A (ja) 2014-12-16 2016-06-23 株式会社半導体エネルギー研究所 半導体装置、及び電子機器
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JP7638768B2 (ja) 2021-04-05 2025-03-04 キオクシア株式会社 半導体記憶装置
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TWI831343B (zh) 2022-08-25 2024-02-01 聚積科技股份有限公司 發光二極體顯示裝置

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US8450783B2 (en) 2013-05-28
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US9153589B2 (en) 2015-10-06
JP5604291B2 (ja) 2014-10-08
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WO2011080998A1 (en) 2011-07-07
KR20120114281A (ko) 2012-10-16
JP2012039059A (ja) 2012-02-23
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US20160027784A1 (en) 2016-01-28
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