TWI488740B - 包封用膜 - Google Patents
包封用膜 Download PDFInfo
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- TWI488740B TWI488740B TW102100511A TW102100511A TWI488740B TW I488740 B TWI488740 B TW I488740B TW 102100511 A TW102100511 A TW 102100511A TW 102100511 A TW102100511 A TW 102100511A TW I488740 B TWI488740 B TW I488740B
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Description
本申請案主張2012年1月6日提出之韓國專利申請案2012-0002170號及2013年1月7日提出之韓國專利申請案2013-0001832號之優先權及權益,該等申請案揭示係以全文引用之方式併入本文中。
本發明有關包封膜、電子裝置及其製造方法。
包封膜可用以保護對濕氣或氧之外部因素敏感的二極體或裝置。在可由包封膜保護的二極體或裝置中,可包括例如有機電子裝置、太陽能電池或二次電池,諸如鋰二次電池。詳言之,在二極體或裝置當中,有機電子裝置易受諸如濕氣或氧之外部因素損害。
有機電子裝置為包括功能性有機材料的裝置。作為包括有機電子裝置或包括在有機電子裝置中之有
機電子二極體,可使用光伏打裝置、整流器、傳輸器或有機發光二極體(OLED)。
有機電子裝置通常易受諸如濕氣之外部因素損害。例如,OLED通常包括一層存在一對包括金屬或金屬氧化之電極之間的功能性有機材料,且該有機材料層在與該電極之界面處因自外部環境滲透的濕氣作用而分離,因濕氣造成電極氧化而使電阻值提高,或係退化,從而造成諸如發射功能損失或發光降低之問題。因此,為了保護OLED不受外部環境因素(諸如濕氣)影響,使用藉由以配備有吸氣劑或濕氣吸附劑之玻璃罐或金屬罐覆於基板上形成之OLED並以黏著劑固定該形成之OLED所形成的包封結構。
本發明係關於提供包封膜、電子裝置及其製造方法。
本發明一實施樣態提供包括第一層及第二層之包封膜。包封膜可包括各第一層及第二層中至少一者,且除了該第一層及第二層之外還包括一額外層。
包封膜包括具有不同物理性質及/或組分之第一層及第二層。即使施加在大規模裝置以保護二極體時,該膜可無氣泡地層合在二極體上,且在包封之後有效保護該二極體不受外部因素(例如濕氣)影響。包封膜可具有各種不同結構,諸如圖1所示,第二層11係配置在第一
層12之一表面上的結構,或如圖2所示,第二層11係配置在第一層12之兩個表面上的結構。此處,第二層11係配置在第一層12之一或兩個表面上的結構可包括該第二層11係直接附著於該第一層12之結構,及該第二層11係經由額外層而間接附著於該第一層12之結構。
在一實例中,包封層可包括濕氣清除劑。本文所使用之「濕氣清除劑」可指能經由與滲透包封膜的水或蒸氣之化學反應而移除該濕氣或蒸氣的材料。在該情況下,第一層可包括比第二層更大量之濕氣清除劑。該第二層可包括比第一層更少量之濕氣清除劑,或可不包括濕氣清除劑。如下文描述,在上述結構中,例如當第二層具有包封膜且使該第二層與二極體接觸時,該二極體可不受損,且可展現優異濕氣或蒸氣阻隔性質。例如,第一層可包括樹脂組分及相對於100重量份該樹脂組分計為30、40或45重量份或以上之濕氣清除劑。該第一層中之濕氣清除劑的比率之上限可根據所希望濕氣阻隔性質而改變,且該第一層可包括相對於樹脂組分計為250、230或210重量份或更低之濕氣清除劑,但本發明不特別侷限於此。該第二層可不包括濕氣清除劑,或者可包括微量濕氣清除劑。該第二層可包括濕氣清除劑,例如相對於100重量份該第二層之固體內容物計為少於5或3重量份。由於該第二層可不包括濕氣清除劑,故該第二層中之濕氣清除劑含量的下限可為0重量份。除非另外定義,否則本文所使用之「重量份」一詞係指重量比。
在包封膜中,第一層可具有低於第二層之彈性模數。例如,第一層之張力模數可低於第二層之張力模數。除非另外特別定義,否則所使用之張力模數係在25℃下測量。此外,除非另外特別定義,否則本文所使用之有關可硬化組分的張力模數係在硬化後測量之張力模數。
當第一層之彈性模數低於第二層之彈性模數時,該包封膜較利於施加至大規模裝置,且因控制該第一層及第二層之間的濕氣清除劑比率而可提供有效濕氣阻隔性質。通常,當濕氣清除劑與該膜中之濕氣反應時,體積膨脹至與濕氣反應的程度,從而產生應力。因此,若張力模數不足以降低於濕氣去除期間所產生的膨脹應力,該膜可能從黏附體分離,或在多層結構之情況下引發中間層分離。例如,當控制以降低膜之彈性模數時,可避免因應力所導致的分離。然而,當經由僅控制硬化度來降低玻璃轉化溫度而控制彈性模數時,膜之水蒸氣傳輸速率(WVTR)可能提高。然而,當堆疊具有不同彈性模數的兩層且濕氣清除劑主要包括在具有這兩層中如上述之較低彈性模數的層中時,滲透過具有較少量濕氣清除劑之層(即,該具有較高彈性模數之層)的濕氣可擴散至該具有較低彈性模數之層,從而加強濕氣阻隔性質。此外,其他物理性質諸如膜之耐久性亦可符合要求。在一實例中,第一層之張力模數可為約0.001至100 Mpa,0.001至80 Mpa,0.001至60 Mpa,0.001至40 Mpa,0.001至20 Mpa,0.001至10 Mpa,0.001至5 Mpa,0.001至3
Mpa,0.001至1 Mpa,0.005至100 Mpa,0.01至100 Mpa,0.05至100 Mpa,0.1至100 Mpa,0.2至100 Mpa,0.3至100 Mpa,0.005至80 Mpa,0.01至60 Mpa,0.05至40 Mpa,0.05至20 Mpa,0.1至10 Mpa,0.1至5 Mpa,0.2至3 Mpa或0.3至1 Mpa。此外,第二層之張力模數可為約300至1000 Mpa,300至900 Mpa,300至800 Mpa,300至700 Mpa,400至1000 Mpa,500至1000 Mpa,550至1000 Mpa,400至900 Mpa,500至800 Mpa或550至700 Mpa。在上述範圍中,第一層可具有低於第二層之彈性模數。例如,第一層之張力模數(M1)對第二層之張力模數(M2)的比率(M1/M2)可為約1×10-6
至0.5,1×10-6
至0.4,1×10-6
至0.3,1×10-6
至0.2,10×10-6
至0.5,100×10-6
至0.5,200×10-6
至0.5,300×10-6
至0.5,400×10-6
至0.5,500×10-6
至0.5,10×10-6
至0.4,100×10-6
至0.4,200×10-6
至0.3,300×10-6
至0.3,400×10-6
至0.2或500×10-6
至0.2。在上述彈性模數之關係中,包封膜亦可有效施加於大規模裝置,且容易將層之間的濕氣清除劑比率控制在適於控制該膜之物理性質。
然而,第一層及第二層之組分不受限制,因此第一層及第二層滿足上述彈性模數關係。在一實例中,第一層及第二層之彈性模數可相同,或在能施加至撓性基板之膜的情況下,第二層可具有比第一層更低之彈性模數,此係因在撓性基板之情況下可能不會遭遇諸如隆起及
/或氣泡等問題之故。
第一層及第二層之厚度可考慮膜中所包括之層數或硬化之用途而予以控制。例如,當膜包括第一層及第二層各一時,該第一層之厚度可為約5至100 μm,且第二層之厚度可為約2至30 μm。在該範圍內,可提供具有優異濕氣阻隔性質、可加工性及耐久性之膜。
在一實例中,第一層可包括相對於去離子水之接觸角80、85、90或95度或更大的樹脂組分。該接觸角為在以含有約15重量%之固體內容物的溶液(其係將樹脂組分溶解於適用溶劑而製備)塗覆玻璃並乾燥該塗覆之溶液而形成層之後,在約25℃下將去離子水滴於該塗覆層上測量的接觸角,且可為重複上述程序10次所測量之接觸角平均值。由於接觸角如上述受控制的組分係包括在第一層中,可提供具有優異濕氣阻隔性質及耐久性之膜。樹脂組分之接觸角的上限可為但不侷限於例如150或120度或更小。
第一層亦可包括WVTR為50或45 g/m2
.天或更低之樹脂組分。WVTR可在100℉且相對濕度為100%之下在從該樹脂組分所形成之具有100 μm厚度的膜之厚度方向測量。由於樹脂組分之WVTR係如上述受控制,可提供具有優異濕氣阻隔性質之膜。由於該第一層之WVTR較低,該膜可具有較佳濕氣阻隔性質,因此其下限不受特定限制。例如,第一層之WVTR下限可為0 g/m2
.天。
在一實例中,包括在第一層中之樹脂組分可符合上述接觸角及WVTR的範圍。由於該第一層包括具有上述接觸角及WVTR範圍的組分,可提供具有優異濕氣阻隔性質及拒水性的膜。
作為樹脂組分,可使用相關技術中提供符合上述接觸角及WVTR或上述彈性模數之要求之第一層的任一已知組分而無特定限制。此外,若單一樹脂不符合接觸角及WVTR要求但與其他樹脂組合符合接觸角及WVTR要求,則可使用該組合樹脂作為樹脂組分。本文所使用之「樹脂組分」可指形成第一層之基底樹脂。該基底樹脂係指用以實現第一層之主要物理性質的樹脂,其不包括諸如添加劑等隨意的組分。在一實例中,當將添加劑(諸如膠黏劑)添加至第一層時,該基底樹脂可不包括膠黏劑。
該組分可為以苯乙烯為底質之樹脂、以聚烯烴為底質之樹脂、熱塑性彈性體、以聚氧伸烷基為底質之樹脂、以聚酯為底質之樹脂、以聚氯乙烯為底質之樹脂、以聚碳酸酯為底質之樹脂、以聚伸苯硫為底質之樹脂、烴類之混合物、以聚醯胺為底質之樹脂、以丙烯酸酯為底質之樹脂、以環氧樹脂為底質之樹脂、以矽為底質之樹脂、以氟為底質之樹脂或其混合物。
此處,以苯乙烯為底質之樹脂可為例如苯乙烯-乙烯-丁二烯-苯乙烯嵌段共聚物(SEBS)、苯乙烯-異戊二烯-苯乙烯嵌段共聚物(SIS)、丙烯腈-丁二烯-苯乙
烯嵌段共聚物(ABS)、丙烯腈-苯乙烯-丙烯酸酯嵌段共聚物(ASA)、苯乙烯-丁二烯-苯乙烯嵌段共聚物(SBS)、以苯乙烯為底質之同元聚合物或其混合物。以烯烴為底質之樹脂可為例如高密度以聚乙烯為底質之樹脂、低密度以聚乙烯為底質之樹脂、以聚丙烯為底質之樹脂或其混合物。熱塑性彈性體可為例如以酯為底質之熱塑性彈性體、以烯烴為底質之熱塑性彈性體或其混合物。其中,以烯烴為底質之熱塑性彈性體可為聚丁二烯樹脂或聚異丁烯樹脂。以聚氧伸烷基為底質之樹脂可為例如以聚甲醛為底質之樹脂、以聚氧乙烯為底質之樹脂或其混合物。以聚酯為底質之樹脂可為例如以聚對苯二甲酸乙二酯為底質之樹脂、以聚對苯二甲酸丁二酯為底質之樹脂或其混合物。以聚偏二氯乙烯為底質之樹脂可為例如聚偏二氯乙烯。烴類之混合物可為例如三十六烷或石蠟。以聚醯胺為底質之樹脂可為例如耐綸。以丙烯酸酯為底質之樹脂可為例如聚(甲基)丙烯酸丁酯。以環氧樹脂為底質之樹脂可為例如雙酚型,諸如雙酚A、雙酚F、或雙酚S型之以環氧樹脂為底質之樹脂或其氫化產物;酚醛清漆型,諸如酚系酚醛清漆或甲酚酚醛清漆型之以環氧樹脂為底質之樹脂;含氮環型,諸如環狀異氰酸三環氧丙酯或尿囊素型之以環氧樹脂為底質之樹脂;脂環型;脂族型;芳族型,諸如萘型之以環氧樹脂為底質之樹脂或聯苯型之以環氧樹脂為底質之樹脂;環氧丙基型,諸如環氧丙基醚型之以環氧樹脂為底質之樹脂、環氧丙基胺型之以環氧樹脂為底質之
樹脂或環氧丙基酯型之以環氧樹脂為底質之樹脂;二環型,諸如二環戊二烯型之以環氧樹脂為底質之樹脂;酯型;醚酯型或其混合物。以矽為底質之樹脂可為例如聚二甲基矽氧烷。此外,以氟為底質之樹脂可為聚三氟乙烯樹脂、聚四氟乙烯樹脂、聚氯化三氟乙烯樹脂、聚六氟丙烯樹脂、聚偏二氟乙烯、聚氟乙烯、聚氟乙烯丙烯(polyethylene propylene fluoride)或其混合物。
樹脂可經順丁烯二酸酐接枝、與上述其他樹脂或用於製備樹脂之單體共聚,或經其他化合物改質,該其他化合物可為羧基末端之丁二烯-丙烯腈共聚物。
此外,上述樹脂可包括至少一個熱可硬化官能基或位置,諸如環氧丙基、異氰酸酯、羥基、羧基或醯胺基,或至少一個活性能量射線可硬化官能基或位置,諸如環氧化物、環醚、硫化物、縮醛或內酯基,以在硬化後展現黏著性質。
在一實例中,第一層可包括聚異丁烯樹脂。聚異丁烯樹脂因疏水性之故而可展現出低WVTR與表面能。詳言之,聚異丁烯樹脂可為例如異丁烯單體之同元聚合物;或藉由共聚可與異丁烯單體聚合之其他單體而製備的共聚物。此處,可與異丁烯單體聚合之單體可為例如1-丁烯、2-丁烯、異戊二烯或丁二烯。
樹脂組分可為具有可模製成膜型之重量平均分子量(Mw)的樹脂。在一實例中,可能模製成膜型之重量平均分子量的範圍可為約100,000至2,000,000,
100,000至1,500,000或100,000至1,000,000。本文所使用之「重量平均分子量(Mw)」係指藉由凝膠滲透層析術(GPC)所測量之標準聚苯乙烯的轉換值。
此外,作為樹脂組分,可使用上述樹脂中之一或至少兩者。當使用至少兩種樹脂時,該等樹脂的種類、重量平均分子量或二者可不相同。
此處,濕氣清除劑可以均勻分布狀態存在樹脂組分中。此處,該均勻分散狀態可指濕氣清除劑以相同或實質上相同密度存在該樹脂組分之任何部分的狀態。本文中可使用之濕氣清除劑可為例如金屬氧化物、硫酸鹽或有機金屬氧化物。詳言之,金屬氧化物可為氧化鎂、氧化鈣、氧化鍶、氧化鋇或氧化鋁;硫酸鹽可為硫酸鎂、硫酸鈉或硫酸鎳;而有機金屬氧化物可為辛酸氧化鋁。可包括在第一層中之濕氣清除劑可使用上述材料中之一或至少兩者。在一實例中,當使用至少兩種材料作為濕氣清除劑時,可使用經煅燒之白雲石。
此種濕氣清除劑可根據膜用途而控制在適當大小。在一實例中,濕氣清除劑之平均粒徑可控制在約10至15,000 nm。由於與濕氣的反應率不會過高,具有在上述範圍內之大小的濕氣清除劑可容易貯存,可不損傷待包封之二極體,且可有效去除濕氣。
濕氣清除劑之含量可控制在例如相對於100重量份上述樹脂組分為5至250重量份。
此外,在一實例中,第一層可另外包括分散
劑,以使該濕氣清除劑均勻分散在樹脂組分中。作為本文可使用之分散劑,可使用對於該濕氣清除劑之親水表面具有親和性且與該樹脂組分具有相容性之非離子界面活性劑。在一實例中,可使用以式1表示之化合物作為非離子界面活性劑。
[式1]R-X
在式1中,R為飽和或不飽和烴基,X為羥基、羧基、胺基或碳水化合物殘基。
在式1中,R可為具有4至28、4至24、4至20或6至20個碳原子之飽和或不飽和烴基。
此外,X為碳水化合物殘基之式1化合物可指該碳水化合物中的氫原子之一係經R取代的化合物。該碳水化合物可為例如葡萄糖。
式1化合物可為例如脂肪酸,諸如硬脂酸、棕櫚酸、油酸或亞麻油酸;脂肪醇,諸如鯨蠟醇、硬脂醇、十六十八醇(cetostearyl alcohol)或油醇;或烷基葡萄糖苷,諸如庚基葡萄糖苷、癸基葡萄糖苷或月桂基葡萄糖苷。
分散劑之含量可根據濕氣清除劑之種類及/或大小而予以控制。詳言之,當濕氣清除劑之大小縮減時,濕氣清除劑之表面積增大,因此需要大量分散劑以均勻分散該濕氣清除劑。在一實例中,當使用平均粒徑為約40
nm之濕氣清除劑時,可使用以100重量份該濕氣清除劑計為約5重量份之分散劑。在一實例中,當使用平均粒徑為約1,000 nm之濕氣清除劑時,可使用以100重量份該濕氣清除劑計為約0.05重量份之分散劑。因此,在考慮上述濕氣清除劑之種類及/或大小時,可使用以100重量份該濕氣清除劑計為約0.01至500重量份之分散劑。在該範圍內,濕氣清除劑可均勻分散且對膜的無任何物理性質(包括黏著強度)無任何影響。
在第一層中包括濕氣清除劑及分散劑的方法可為相關技術中所使用的任何方法且無特定限制,且可為藉由控制混合順序而能將濕氣清除劑均勻分散在樹脂組分中之方法。首先,將分散劑分散在溶劑中來製備分散溶液。此處,溶劑可根據塗覆性、乾燥溫度或與樹脂組分之相容性加以選擇。在一實例中,當使用聚異丁烯樹脂作為樹脂組分,可使用芳族溶劑(諸如甲苯或二甲苯)作為溶劑。添加濕氣清除劑或將之與該分散溶液混合。此處,作為混合濕氣清除劑與分散溶液之方法,可進一步使用物理性分散方法以提高濕氣清除劑的分散度。該物理性分散方法可為例如使用搖動器、音波處理或珠磨之方法。用於形成第一層之組成物可藉由將分散有濕氣清除劑及分散劑之溶液添加至包括樹脂組分之溶液而獲得。分散有濕氣清除劑及分散劑之溶液可隨意地經過濾以篩出大粒徑粒子,然後可將該經過濾溶液添加至該包括樹脂組分之溶液。經由上述方法,可形成濕氣清除劑及分散劑係均勻分散在樹脂
組分中之第一層。然而,該方法不侷限於上述,且可由本技術之一般技術人員簡單地修改。
第一層可另外包括濕氣阻隔劑。本文所使用之「濕氣阻隔劑」可指對於滲透膜之濕氣不具或具有低反應性,但能防止或干擾濕氣或蒸氣遷移至該膜內的材料。作為濕氣阻隔劑,可使用黏土、滑石、針狀矽石、平面矽石、多孔矽石、沸石、氧化鈦或氧化鋯中之一者或至少兩者。此外,濕氣阻隔劑可經有機改質劑表面處理,以促進有機材料滲透。有機改質劑可為例如二甲基苯甲基氫化牛脂四級銨、二甲基二氫化牛脂四級銨、甲基牛脂雙2-羥乙基四級銨、二甲基氫化牛脂2-乙基己基四級銨、二甲基脫氫牛脂四級銨或其混合物。
可包括在第一層中之濕氣阻隔劑的含量可關於濕氣清除劑之基質結構及樹脂組分而予以適當控制。在一實例中,濕氣阻隔劑之含量可控制在相對於100重量份樹脂組分為0至50重量份或1至30重量份。在該範圍內,可提供具有優異濕氣阻隔性質及機械性質之膜。
在一實例中,即使第一層包括濕氣清除劑及濕氣阻隔劑二者,可藉由控制第一層之混合順序而將該濕氣清除劑及該濕氣阻隔劑均勻均勻分散在樹脂組分中。
例如,首先可藉由將濕氣阻隔劑添加至溶劑而製備第一分散溶液。此處,可藉由音波處理、珠磨、球磨、高速分散或高壓分散之方法將濕氣阻隔劑均勻分散於分散溶液而獲得第一分散溶液。另外,如上述,製備分散
有濕氣清除劑及/或分散劑之第二分散溶液。將所製備之第一及第二分散溶液添加至包括樹脂組分之溶液並與之混合。於混合期間,考慮到樹脂組成物的黏度及塗覆性之控制,可另外添加溶劑。根據上述方法,可形成分散有濕氣清除劑及阻隔劑之第一層。可修改該形成第一層之方法中本技術之一般技術人員熟知的方面而無限制。
第一層可另外包括膠黏劑。作為膠黏劑,例如可使用藉由氫化石油樹脂而獲得氫化石油樹脂。該氫化石油樹脂可為部分或完全氫化樹脂,或此等樹脂之混合物。作為膠黏劑,可選擇具有與樹脂組分之良好相容性與優異濕氣阻隔性質者。氫化石油樹脂的特定實例可為以氫化萜烯為底質之樹脂、以氫化酯為底質之樹脂或以氫化二環戊二烯為底質之樹脂。膠黏劑可具有約200至5,000之重量平均分子量。視需要,膠黏劑之含量可經適當控制。例如,包括在第一層中之膠黏劑相對於100重量份樹脂組分可為5至100重量份。
除了該等組分外,可根據膜用途及形成膜的方法而在第一層中包括各種不同添加劑。例如,考慮耐久性及加工性,第一層中可另外包括可硬化材料。此處,可硬化材料可指除了樹脂組分之外包括具有熱可硬化官能基及/或活性能量射線可硬化官能基的材料。此外,第一層中包括之可硬化材料的含量可根據膜的所希望物理性質而予以控制。
在一實例中,第二層可具有與第一層之組分
相同的組成。此外,在其他實例中,第二層可為包括可硬化樹脂組成物之層。在該情況下,第二層可為熱熔融型黏著劑層。本文所使用之「熱熔融型黏著劑層」一詞可指在室溫下維持固態或半固態,而當施加適當熱時可熔融,藉此展現出壓敏性黏著性質,且在硬化後可牢固地固定至目標材料作為黏著劑之層。此外,本文所使用之「黏著劑的硬化」一詞可指將目標材料改變成具有黏著性質的化學或物理作用或反應。此外,「室溫」一詞可指在自然狀態下未經提高或降低之溫度,例如約15至35℃,20至25℃,25℃或23℃。此外,此處在室溫下維持固態或半固態可指目標材料在室溫下具有約106
或107
泊或更高之黏度。此處,黏度係使用先進的流變膨脹系統(ARES)測量。此處,黏度上限可為但不特別侷限於例如約109
泊或更低。
例如,即使在第二層中所包括的組分(諸如可硬化樹脂組成物)未硬化之狀態下,該第二層於室溫下仍可維持固態或半固態。因此,第二層可包括呈膜類型之可硬化樹脂組成物。因此,可獲得優異可處理性,可防止包封期間對於二極體的物理性或化學性損傷,及可進行平順作業。
該可硬化樹脂組成物可為例如可硬化樹脂。作為可硬化樹脂,可使用相關技術中已知之熱可硬化樹脂、活性能量射線可硬化樹脂或混合可硬化樹脂。此處,「熱可硬化樹脂」一詞可指可經由施加適當之熱或老化而硬化之樹脂,「活性能量射線可硬化」一詞可指可藉由活
性能量射線而硬化之樹脂,而「混合可硬化樹脂」一詞可指可藉由同時或依序進行熱可硬化樹脂及活性能量射線可硬化樹脂之硬化機制而硬化的樹脂。此外,活性能量射線可為微波、IR、UV或X射線、γ射線或粒子束(諸如α粒子束、質子束、中子束或電子束)。
此外,上述樹脂為在硬化後展現適當黏著強度之樹脂,且可包括至少一個熱可硬化官能基或位置,諸如環氧丙基、異氰酸酯、羥基、羧基或醯胺基,或至少一個活性能量射線可硬化官能基或位置,諸如環氧化物、環醚、硫化物、縮醛或內酯基。可硬化樹脂可為但不侷限於具有至少一個上述官能基或位置之丙烯酸系樹脂、聚酯樹脂、異氰酸酯樹脂或環氧樹脂。
在一實例中,可硬化樹脂可為環氧樹脂。環氧樹脂可為芳族或脂族環氧樹脂。作為環氧樹脂,可使用熱可硬化環氧樹脂或藉由輻照活性能量射線之陽離子聚合而硬化的活性能量射線可硬化環氧樹脂。
根據一實例之環氧樹脂可具有150至2,000 g/eq之環氧當量。在該環氧當量範圍內,硬化產物之特徵(諸如黏著性能或玻璃轉化溫度)可維持在適當範圍內。
在一實例中,環氧樹脂可為芳族環氧樹脂。本文所使用之「芳族環氧樹脂」一詞可指包括芳族核心(諸如伸苯基結構)或在樹脂主鏈或側鏈包括芳族基(諸如苯基)之環氧樹脂。當使用芳族環氧樹脂時,硬化產物具有優異熱安定性及化學安定性以及低WVTR,因此可增
強用於電子二極體之包封結構的可靠度。芳族環氧樹脂可為但不侷限於聯苯型環氧樹脂、萘型環氧樹脂、二環戊二烯型環氧樹脂、經二環戊二烯改質之苯酚型環氧樹脂、以甲酚為底質之環氧樹脂、以雙酚為底質之環氧樹脂、以酚醛樹脂為底質之環氧樹脂、多官能基環氧樹脂、酚系酚醛清漆環氧樹脂、三酚甲烷型環氧樹脂及經烷基改質之三酚甲烷環氧樹脂中之一或至少兩者。在一實例中,環氧樹脂可為經矽烷改質之環氧樹脂。該經矽烷改質之環氧樹脂可為例如上述環氧樹脂中之至少一者與矽烷化合物的反應產物。此處,該矽烷化合物可為例如以式2表示之化合物。
[式2]Dn
SiQ(4-n)
式2中,D為乙烯基、環氧基、胺基、丙烯基、甲基丙烯基、巰基、烷氧基或異氰酸酯基,或經該等官能基中至少一者取代之烷基;Q為氫、烷基、鹵素、烷氧基、芳基、芳氧基、醯氧基、烷硫基或伸烷氧硫基;且n為介於1與3之數。
在式2化合物中,官能基D可藉由與環氧樹脂中所包括之官能基反應而形成經矽烷改質之環氧樹脂。
例如,當官能基為胺基,該胺基可藉由與環氧樹脂之環氧基反應而形成-CH(OH)-CH2
-NH-鍵,因而可將矽烷化合物導入環氧基中。
此外,當官能基D為異氰酸酯或烷氧基時,可藉由與包括羥基(OH)之環氧樹脂(例如雙酚型環氧樹脂,諸如雙酚F型環氧樹脂、雙酚F型酚醛清漆環氧樹脂、雙酚A型環氧樹脂或雙酚A型酚醛清漆環氧樹脂)反應而導入矽烷化合物。
在式2中,該烷基可為具有1至20、1至16、1至12、1至8或1至4個碳原子之烷基。烷基可為直鏈、支鏈或環狀烷基。
在式2中,鹵素原子可為氟(F)、氯(Cl)、溴(Br)或碘(I)。
此外,在式2中,該烷氧基可為具有1至20、1至12、1至8或1至4個碳原子之烷氧基。該烷氧基可為直鏈、支鏈或環狀烷氧基。
此外,在式2中,該芳基或包括在芳氧基中之芳基可為芳基或芳烷基。例如,該芳基可指從包括至少一個苯環或其中至少兩個苯環鍵聯或縮合的結構之化合物或其衍生物所衍生的一價殘基。該芳基可為例如6至25、6至21、6至18或6至12個碳原子之芳基。作為芳基,可使用例如苯基、二氯苯基、氯苯基、苯乙基、苯丙基、苯甲基、甲苯基、二甲苯基或萘基。
此外,在式2中,該醯氧基可為具有1至20、1至16、1至12個碳原子之醯氧基。
此外,在式2中,該烷硫基基可為具有1至20、1至16、1至12、1至8或1至4個碳原子之烷硫
基;該伸烷氧硫基可為1至20、1至16、1至12、1至8或1至4個碳原子之伸烷氧硫基。
烷基、烷氧基、芳基或醯氧基、烷硫基或伸烷氧硫基可隨意地經至少一個取代基取代。該取代基可為但不侷限於羥基、環氧基、烷基、烯基、炔基、烷氧基、醯基、硫醇基、丙烯醯基、甲基丙烯醯基、芳基或異氰酸酯基。
在式2中,官能基D可尤其是例如烷氧基、胺基或異氰酸酯基。
此外,在式2中,官能基Q中至少一、二或三者可為例如鹵素原子、烷氧基、芳氧基、醯氧基、烷硫基或伸烷氧硫基,或烷氧基。
作為經矽烷改質之環氧基,例如環氧樹脂中係導入相對於100重量份該環氧樹脂計為約0.1至10重量份,0.1至9重量份,0.1至8重量份,0.1至7重量份,0.1至6重量份,0.1至5重量份,0.1至4重量份,0.1至3重量份,0.3至2重量份或0.5至2重量份之矽烷化合物。在一實例中,其中導入矽烷化合物之環氧樹脂可為芳族環氧樹脂。該芳族環氧樹脂可為例如雙酚型環氧樹脂,諸如雙酚F型環氧樹脂、雙酚F型酚醛清漆環氧樹脂、雙酚A型環氧樹脂或雙酚A型酚醛清漆環氧樹脂。
因該環氧樹脂經矽烷改質而在其結構中包括矽基之故,電子裝置之包封層可具有對於基板等之優異黏著性質,及優異濕氣阻隔性質、耐久性以及可靠度。
第二層可視可硬化樹脂種類而另外包括可藉由與可硬化樹脂反應而形成交聯結構之硬化劑或可促進樹脂之硬化反應的起始劑。
硬化劑之適用種類可根據可硬化樹脂之種類或包括在該樹脂中之官能基而選擇並使用。
在一實例中,當可硬化樹脂為環氧樹脂時,可使用相關技術中已知之用於環氧樹脂的硬化劑作為硬化劑,且可為但不侷限於胺硬化劑、咪唑硬化劑、苯酚硬化劑、磷硬化劑或酸酐硬化劑中之一或至少兩者。
在一實例中,可使用於室溫下為固態且熔點或分解溫度為80℃或更高之咪唑化合物作為硬化劑。此種化合物可為但不侷限於2-甲基咪唑、2-十六基咪唑、2-苯基咪唑、2-苯基-4-甲基咪唑或1-氰乙基-2-苯基咪唑。
硬化劑之含量可根據該組成物之組成,例如可硬化樹脂之種類或比率而選擇。例如,可包括相對於100重量份該可硬化樹脂計為1至20、1至10或1至5重量份之硬化劑。然而,該重量比可根據可硬化樹脂之種類及比率,或該樹脂之官能基,或待實現之交聯密度而改變。
當可硬化樹脂為可藉由輻照活性能量射線而硬化之環氧樹脂時,可使用例如陽離子光起始劑作為起始劑。
陽離子光起始劑可為以鎓鹽或有機金屬鹽為底質之離子化陽離子起始劑,或以有機矽烷或潛在磺酸為
底質之非離子化陽離子光起始劑。以鎓鹽為底質之起始劑可為二芳基碘鎓鹽、三芳基鋶鹽或芳基重氮鹽;以有機金屬鹽為底質之起始劑可為鐵芳烴;以有機矽烷為底質之起始劑可為磷硝基苯甲基三芳基矽基醚、過氧化三芳基矽基或醯基矽烷;及以潛在磺酸為底質之起始劑可為α-磺醯氧基酮或α-羥基甲基安息香磺酸酯,但本發明不侷限於此。
在一實例中,陽離子起始劑可為離子化陽離子光起始劑。
該起始劑之含量係如該硬化劑般,可根據可硬化樹脂之種類及比率,或該樹脂之官能基,或待實現之交聯密度而改變。例如,可摻合相對於100重量份可硬化樹脂為0.01至10重量份或0.1至3重量份之含量的起始劑。當可硬化樹脂含量過小時,可能未充分進行硬化,而當硬化劑含量過高時,在硬化之後離子材料含量增加,因此黏著劑之耐久性降低或因起始劑之特徵而形成共軛酸,其對於光學耐久性而言不適當。此外,視基底層而定,可能發生腐蝕,因此可選擇適當含量範圍。
第二層可另外包括黏合劑樹脂。當模製成膜或薄片類型時,該黏合劑樹脂可用以改善模製性。
若樹脂具有與不同樹脂(諸如可硬化樹脂)之相容性,則黏合劑樹脂之種類無特定限制。黏合劑樹脂可為苯氧基樹脂、丙烯酸酯樹脂或高分子量環氧樹脂。此處,高分子量環氧樹脂可指分子量為約2,000至70,000或4,000或6,000之樹脂。該高分子量環氧樹脂可為固態雙
酚A型環氧樹脂或固態雙酚F型環氧樹脂。作為黏合劑樹脂,可使用橡膠組分,諸如含高極性官能基橡膠或含高極性官能基反應性橡膠。在一實例中,黏合劑樹脂可為苯氧基樹脂。
當包括黏合劑樹脂時,其比率可根據所希望之物理性質而予以控制,但無特定限制。例如,可包括相對於100重量份可硬化黏著劑組分為約200、150或100重量份之含量的黏合劑樹脂。當黏合劑樹脂之含量為200重量份或更少時,可有效維持與第二層之各組分的相容性,且該黏合劑樹脂可用作黏著劑層。
第二層可另外包括濕氣阻隔劑。當濕氣清除劑與包括有機材料之二極體接觸時,其可能因與濕氣化學反應而損傷該二極體。因此,第二層可包括或可不包括微量濕氣清除劑。當第二層包括微量濕氣清除劑時,濕氣清除劑之含量可如上述。然而,濕氣阻隔劑使得濕氣的遷移路徑較常以阻隔濕氣,且因其反應性小於濕氣清除劑,故其損傷二極體的機會較低。可包括在第二層中之濕氣阻隔劑的含量可為例如以100重量份可硬化樹脂計為約0.01至50重量份或1至30重量份。濕氣阻隔劑之特定種類及將濕氣阻隔劑分散在可硬化之方法可參考第一層中所包括之濕氣阻隔劑及包括該濕氣阻隔劑之方法而暸解。
在不影響所希望效果的情況下,第二層可另外包括添加劑,諸如塑化劑、UV安定劑及/或抗氧化劑。
該膜可另外包括基底層。該基底層可配置在
該膜之一或兩個表面上。該基底層可為例如經脫離處理之基底層,或相關技術中所使用之任一者而無限制。
包封膜可包封且保護任何標的物。特別是,該膜可有利於保護包括對於外部組分(例如濕氣或蒸氣)敏感之二極體的標的物。作為可施加包封膜之標的物,可使用有機電子裝置,諸如光伏打裝置、整流器、傳輸器或OLED,太陽能電池或二次電池,但本發明不侷限於此。
本發明另一實施樣態提供包括上基板、下基板及包括包封在該上基板與下基板之間的二極體之膜的包封層之電子裝置。此處,該二極體可指該電子裝置之任一部分。作為可由該膜保護之二極體的代表實例,可使用有機電子裝置,諸如OLED,但本發明不侷限於此。
在一實例中,該膜可為具有上述第一層及第二層的包封膜。該膜可例如未經硬化。該包括上述膜的包封層可為藉由硬化該膜所形成的層。
在該電子裝置中,上基板可配置成面向下基板。此外,該二極體可在該下基板之一表面上形成,該下基板之該表面可面向該上基板。該膜可配置在該上基板及該下基板之間,且該膜之第二層可配置成與該具有二極體之下基板接觸。在此種結構中,該膜可實質上覆蓋該二極體的全部表面。在一實例中,如圖3所示,該膜可包括第一層12及第二層11,且第二層11可配置成與二極體23及下基板22接觸。此外,在其他實例中,如圖4所示,該膜可包括第二層11、第一層12及其他第二層11,且該
等第二層11中任一者可配置成與二極體23及下基板22接觸。如上述,由於第二層包括微量或不包括能損傷該二極體之濕氣清除劑,故即使該第二層係與該二極體接觸時其亦不影響功能。此外,如上述,該第二層具有段差(step difference)補償性質,因此可附著於具有高度差之表面(諸如具有二極體23之下基板)而無隆起或氣泡。如此,可提供該包封層與該二極體或下基板之間的優異界面黏著強度。
在藉由硬化該膜所形成的包封層中,第二層可具有0、50、70、85或100℃或更高之玻璃轉化溫度。由於第一層包括大量濕氣清除劑,由濕氣清除劑與濕氣之間的反應所產生的離子可能遷移至該第二層。然而,該第二層可能與二極體接觸,如此離子從第一層遷移至第二層可能影響該二極體之性能。為此,該第二層可經充分硬化,從而防止離子從第一層遷移至該第二層及使該二極體性能惡化。即,可藉由防止玻璃轉化溫度在上述範圍內之離子從第一層遷移至該第二層而使該該第二層具有上述上述效果。
在一實例中,該電子裝置可為有機電子裝置。該包封層在有機電子裝置中可展現優異濕氣阻隔性質及光學性質,且有效固定並支撐該上基板及該下基板。此外,由於濕氣清除劑係製備成奈米大小且均勻分散在樹脂中,該包封層可具有優異透明度,因此不論該有機電子裝置(諸如頂部發射或底部發射型)的形狀為何均變得安
定。
除了藉由上述膜形成之包封層之外,該有機電子裝置可以相關技術中已知之慣用構造提供。例如,可使用相關技術中慣用之玻璃或聚合物膜作為下基板或上基板。此外,該OLED可包括例如一對電極及在該對電極之間形成的一層有機材料。此處,該對電極中任一者可為透明電極。此外,該層有機材料可包括例如電洞傳輸層、發射層及電子傳輸層。
本發明又另一實施樣態提供一種製造電子裝置之方法,其包括將上述膜層合於一上面形成有二極體的基板上,以使該膜之第二層與該二極體接觸。
在一實例中,製造電子裝置之方法可為製造上述電子裝置之方法。
在上述中,將該膜堆疊成與二極體接觸,可施加該膜以覆蓋該二極體的全部表面。
此外,該膜之第二層層合成與二極體接觸可包括將該膜之第二層配置成與二極體接觸,並加壓該二極體同時加熱該第二層以提供流動性。在一實例中,該第二層在室溫下可為固態或半固態,並在該第二層與該二極體接觸時可加熱以維持於65℃且1 Hz下為103
至105
Pa.s之黏度。當該第二層為上述熱熔融型黏著劑層時,其可附著至具有高度鬆之表面,以使於其上形成有該二極體之基板無隆起及/或氣泡。因此,可提供更大規模之電子裝置而不存在因氣泡造成的性能降級。
此處,當第二層包括熱可硬化樹脂時,該加熱可控制在約40至100℃之溫度,且時間在1至20分鐘內,原因係包封層之內聚強度及黏著強度可能因過度硬化而降低。
此外,該加壓可使用真空壓機下進行以防止在該二極體與該第二層之間產生氣泡。
此外,該方法可包括在第二層堆疊成與二極體接觸之後將該第二層硬化。該硬化程序可在適當加熱室或UV室中進行,其係視例如可硬化樹脂之硬化方法而定。加熱條件或用於輻照活性能量射線之條件可考慮電子二極體及可硬化樹脂組成物之硬化性而做適當選擇。
在一實例中,可進行硬化以使該第二層之玻璃轉化溫度為0℃,50℃,70℃,85℃或100℃或更高。當進行硬化使該第二層具有上述範圍之玻璃轉化溫度時,可防止離子從該第一層遷移至該第二層,因此可展現上述效果。
在一實例中,膜可在層合之前預先轉移至該電子裝置的上基板。如圖5所示,當該膜包括第一層12及第二層11時,該膜之第一層12可轉移至上基板21。在一實例中,當第一層12具有壓敏性黏著性質時,其可藉由預定壓力而附著於該上基板21。因此,該第一層之轉移可在該第一層係與該上基板21接觸之後藉由輥層合來進行。此外,在其他實例中,當該第一層12具有黏著性質時,該第一層12之轉移可如將第二層層合在二極體
的方法所述般進行,並可包括該第一層12之硬化。之後,如上述,可將該膜之第二層11堆疊於二極體23上。
此外,如圖6所示,當該膜包括第二層11、第一層12及第二層11時,該膜之第二層11可轉移至上基板21。第二層11之轉移可如將該第二層層合在二極體上之方法般進行,且包括硬化該第二層。
上述方法為電子裝置之製法的實例,但本發明不侷限於此。該裝置之製造程序可如上述進行,但可改變該程序之順序或條件。
11‧‧‧第二層
12‧‧‧第一層
21‧‧‧上基板
22‧‧‧下基板
23‧‧‧二極體
圖1為根據一範例具體實例之膜的示意圖;圖2為根據另一範例具體實例之膜的示意圖;圖3為根據範例具體實例之有機電子裝置的示意圖;圖4為根據另一範例具體實例之有機電子裝置的示意圖;圖5為圖示說明根據範例具體實例之有機電子裝置的製法之示意圖;及圖6為圖示說明根據另一範例具體實例之有機電子裝置的製法之示意圖。
下文茲將參考實施例及對照實例更詳細描述膜,但該膜之範圍不侷限於以下實施例。
下文茲藉由以下方法評估實施例及對照實例中所示之物理性質。
1.張力模數之測量
藉由將實施例或對照實例中所製備之第一或第二層溶解於溶劑中而製備樹脂組成物。將該樹脂組成物塗覆在厚度為38 μm之基底膜(脫離聚酯膜,RS-21G,SKC)。之後,在110℃下乾燥該經塗覆之組成物10分鐘,藉此製備厚度為40 μm之膜型層。該製備之塗層係設計塑以縱向塗覆,然後切成50 mm×10 mm(長×寬)之大小,如此製備試樣。以膠帶固定該試樣之兩個末端並並在縱向留下25 mm。然後,在該膠帶固定部分於25℃下以18 mm/min延伸時,測量張力模數。
2.濕氣阻隔性質之評估
在具有12 mm×12 mm(長×寬)大小之玻璃基板上沉積大小為10 mm×10 mm(長×寬)之鈣。獨立地,將實施例或對照實例中所形成之膜切成12 mm×12 mm(長×寬)大小。然後,將該膜之第一層或一表面轉移至覆蓋玻璃。之後,將該膜之配置有該覆蓋玻璃的表面之反側表面層合於該玻璃基板的鈣上,並使用真空壓機在80℃下熱加壓2分鐘,且於100℃下硬化3小時,從而形
成包封層。如此,製造試樣。然後,在該試樣係保持在85℃及85%相對濕度之恆溫且恆濕室中約500小時的同時,測量氧化且變透明之鈣沉積部分的長度。由於鈣在一個方向中的總長度為10 mm,來自一端之鈣的經氧化部分長度變成5 mm,此意指所有鈣係被氧化。
3.耐久性及可靠度之評估
將實施例或對照實例中所形成之膜層合在鈉鈣玻璃基板之間,使用真空壓機在80℃下熱加壓2分鐘,且於100℃下硬化3小時,從而形成包封層。如此,製備試樣。之後,在該試樣保持在85℃及85%相對濕度之恆溫且恆濕室中約500小時的同時,觀察玻璃基板與包封層之間的界面處是否發生隆起。
4.面板應用性之評估
將實施例或對照實例中所形成之膜切成90 mm×90 mm(長×寬)之大小,並將該膜之第一層或一表面轉移至覆蓋玻璃。然後,使用真空壓機在80℃下熱加壓2分鐘,將該膜之配置該覆蓋玻璃的表面之反側表面熱加壓於具有100 mm×100 mm(長×寬)之大小的玻璃基板上,並於100℃下硬化3小時,從而製備試樣。觀察該試樣中是否產生氣泡。
(1)第一層溶液之製備
藉由將100重量份經煅燒白雲石作為濕氣清除劑及0.5重量份硬脂酸作為分散劑添加至溶液中而製備固體含量為50重量%之濕氣清除劑溶液,並藉由球磨研磨該溶液24小時。此外,分別將重量平均分子量為1,100,000之70重量份聚異丁烯樹脂(產品名:B 100,製造商:BASF)添加至反應容器作為第一層之樹脂組分,並添加30重量份之以氫化二環戊二烯為底質之樹脂(產品名:SU-90,製造商:Kolon)作為膠黏劑,然後以甲苯稀釋成固體含量為約20重量%。之後,以氮替代該反應容器內部,並將該製備之溶液均質化。將先前製備之濕氣清除劑溶液添加至該經均質化之溶液中使其具有相對於100重量份樹脂組分為50重量份之經煅燒白雲石的含量。如此,製備第一層溶液。
(2)第二層溶液之製備
第二層溶液係藉由在室溫將100重量份經矽烷改質之環氧樹脂(KSR-177,Kukdo Chemical)、100重量份雙酚A型環氧樹脂(YD-011,Kukdo Chemical)及80重量份苯氧基樹脂(YP-50,Tohto Kasei)添加至反應容器,以與甲基乙基酮稀釋該形成的混合物,以氮替代該反應容器內部,均質化該製備之溶液,將4重量份作為硬化劑之咪唑(Shikoku Chemical)添加至該經均質之溶
液,並以高速攪拌1小時而製備。
(3)膜之形成
藉由將上述製備之第一層的溶液塗覆於脫離PET之脫離表面上而形成厚度為40 μm之第一層,並在110℃下乾燥該溶液10分鐘。
藉由將上述製備之第二層的溶液塗覆於脫離PET之脫離表面上而形成厚度為15 μm之第二層,並在130℃下乾燥該溶液3分鐘。
藉由將該第一層及第二層層合而形成多層膜。
第一層溶液、第二層溶液及膜係如實施例1所述但添加濕氣清除劑溶液以使其具有相對於100重量份樹脂組分為100重量份之經煅燒白雲石的含量而製備。
第一層溶液、第二層溶液及膜係如實施例1所述但添加濕氣清除劑溶液以使其具有相對於100重量份樹脂組分為200重量份之經煅燒白雲石的含量而製備。
(1)第一層溶液之製備
第一層溶液係藉由在室溫將100重量份經羧基末端之丁二烯-丙烯腈(CTBN)改質的環氧樹脂(產品名:KR-207,製造商:Kukdo Chemical)及100重量份作為樹脂組分之苯氧基樹脂(YP-50,Tohto Kasei)添加至反應容器,以甲苯將該形成之混合物稀釋成固體含量為約20重量%,均質化該製備之溶液,將4重量份作為硬化劑之咪唑(Shikoku Chemical)置入該經均質之溶液,以高速攪拌1小時,並混合和實施例1所製備之相同濕氣清除劑溶液與該形成之溶液以使其具有相對於100重量份組分為70重量份之經煅燒白雲石的含量而製備。
(2)第二層溶液之製備
第二層溶液係如實施例1所述般製備。
(3)膜之形成
膜係如實施例1所述但使用實施例4中所製備之溶液作為第一層溶液而形成。
第一層溶液、第二層溶液及膜係如實施例4所述但使用70重量份以二環戊二烯為底質之環氧樹脂(DCPD)及30重量份經順丁烯二酸酐改質之異丁烯共聚物(產品名:Glissopal,製造商:BASF)代替100重量
份經CTBN改質之環氧樹脂作為第一層之樹脂組分而製備。
第一層溶液及膜係如實施例1所述但使用實施例1中第一層溶液之未添加濕氣清除劑溶液之溶液作為第二層溶液。
第二層溶液及膜係如實施例1所述但使用實施例1中之第二層溶液作為第一層溶液而製備。然而,使用藉由將與實施例1所製備相同之濕氣清除劑溶液添加至該溶液以使其具有相對於100重量份樹脂組分為10重量份之經煅燒白雲石的含量所製備之第一層溶液。
第一層溶液、第二層溶液及膜係如對照實例1所述但添加濕氣清除劑溶液以使其具有相對於100重量份環氧樹脂為50重量份之經煅燒白雲石的含量而製備。
第一層溶液、第二層溶液及膜係如對照實例1所述但添加濕氣清除劑溶液以使其具有相對於100重量份環氧樹脂為70重量份之經煅燒白雲石的含量而製備。
第一層溶液、第二層溶液及膜係如對照實例1所述但添加濕氣清除劑溶液以使其具有相對於100重量份環氧樹脂為100重量份之經煅燒白雲石的含量而製備。
(1)第一層溶液之製備
第一層溶液係如對照實例4所述般製備。
(2)第二層溶液之製備
第二層溶液係藉由在室溫下將70重量份聚異丁烯樹脂及30重量份以氫化二環戊二烯為底質之樹脂添加至反應容器,以甲苯將該形成之混合物稀釋成固體含量為約20重量%,以氮替代該反應容器內部,及均質化該製備之溶液而製備。
(3)膜之形成
膜係如對照實例3所述但使用對照實例5中所製備之第二層溶液作為第二層溶液而形成。
第一層溶液、第二層溶液及膜係如實施例1
所述但添加濕氣清除劑溶液以使其具有相對於100重量份樹脂組分為10重量份之經煅燒白雲石的含量而製備。
可提出具有優異濕氣阻隔性質、可處理性、加工性及耐久性之包封膜,以及包含經該包封膜包封之二極體的結構。
11‧‧‧第二層
12‧‧‧第一層
Claims (10)
- 一種用於包括二極體之有機電子裝置的包封膜,其包含:第一層,其包含樹脂組分及相對於100重量份該樹脂組分為30重量份或以上之濕氣清除劑,且於25℃下硬化後之張力模數為0.001至100MPa;及第二層,其包含相對於100重量份該第二層之固體含量為少於5重量份之濕氣清除劑,且係與該二極體接觸。
- 如申請專利範圍第1項之膜,其中該第二層係配置在該第一層的一個表面或兩個表面上。
- 如申請專利範圍第1項之膜,其中該第一層於25℃下硬化後之張力模數低於該第二層於25℃下硬化後之張力模數。
- 如申請專利範圍第1項之膜,其中該第二層在室溫下為固態或半固態。
- 如申請專利範圍第4項之膜,其中該第二層係呈非硬化狀態。
- 如申請專利範圍第1項之膜,其中該第二層包含可硬化樹脂組成物。
- 如申請專利範圍第6項之膜,其中該第二層包含呈膜類型之該可硬化樹脂組成物。
- 一種電子裝置,其包含:上基板;下基板;及 將介於該上基板與該下基板之間的二極體包封之包封層,其包含如申請專利範圍第1項之膜。
- 如申請專利範圍第8項之電子裝置,其中該二極體係形成於該下基板之面對該上基板的表面上,且該膜的第二層係與該下基板接觸。
- 一種製造電子裝置之方法,其包含:將申請專利範圍第1項之膜層合於一上面形成有二極體的基板上,以使該膜之第二層與該二極體接觸。
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