TWI356830B - - Google Patents

Download PDF

Info

Publication number
TWI356830B
TWI356830B TW94115015A TW94115015A TWI356830B TW I356830 B TWI356830 B TW I356830B TW 94115015 A TW94115015 A TW 94115015A TW 94115015 A TW94115015 A TW 94115015A TW I356830 B TWI356830 B TW I356830B
Authority
TW
Taiwan
Prior art keywords
film
decane
cerium oxide
group
forming
Prior art date
Application number
TW94115015A
Other languages
English (en)
Chinese (zh)
Other versions
TW200613375A (en
Inventor
Akiyama Masahiro
Nakagawa Hisashi
yamanaka Tatsuya
Shiota Atsushi
Kurosawa Takahiko
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200613375A publication Critical patent/TW200613375A/zh
Application granted granted Critical
Publication of TWI356830B publication Critical patent/TWI356830B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3105—After-treatment
    • H01L21/31058—After-treatment of organic layers
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/04—Polysiloxanes
    • C08G77/32—Post-polymerisation treatment
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C08G77/50—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms by carbon linkages
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J3/00—Processes of treating or compounding macromolecular substances
    • C08J3/28—Treatment by wave energy or particle radiation
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/20—Manufacture of shaped structures of ion-exchange resins
    • C08J5/22—Films, membranes or diaphragms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
    • H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
    • C08J2383/04—Polysiloxanes
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J2383/00—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers
    • C08J2383/16—Characterised by the use of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen, or carbon only; Derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/26—Web or sheet containing structurally defined element or component, the element or component having a specified physical dimension
    • Y10T428/263—Coating layer not in excess of 5 mils thick or equivalent
    • Y10T428/264—Up to 3 mils
    • Y10T428/265—1 mil or less
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31652—Of asbestos
    • Y10T428/31663—As siloxane, silicone or silane

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Wood Science & Technology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
TW094115015A 2004-05-11 2005-05-10 Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation TW200613375A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2004141200 2004-05-11
JP2005050590A JP5110239B2 (ja) 2004-05-11 2005-02-25 有機シリカ系膜の形成方法、膜形成用組成物

Publications (2)

Publication Number Publication Date
TW200613375A TW200613375A (en) 2006-05-01
TWI356830B true TWI356830B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2012-01-21

Family

ID=35320202

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115015A TW200613375A (en) 2004-05-11 2005-05-10 Method for forming organic silica film, organic silica film, wiring structure, semiconductor device, and composition for film formation

Country Status (6)

Country Link
US (1) US8268403B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (1) EP1746122B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JP5110239B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (1) KR101163251B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW200613375A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (1) WO2005108468A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (44)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7442629B2 (en) 2004-09-24 2008-10-28 President & Fellows Of Harvard College Femtosecond laser-induced formation of submicrometer spikes on a semiconductor substrate
US7057256B2 (en) 2001-05-25 2006-06-06 President & Fellows Of Harvard College Silicon-based visible and near-infrared optoelectric devices
EP1719793A4 (en) * 2004-02-26 2009-05-20 Jsr Corp POLYMER AND MANUFACTURING METHOD THEREFOR, COMPOSITION FOR FORMING AN INSULATING FILM AND PRODUCTION METHOD THEREFOR
JP5110239B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
JP5110238B2 (ja) * 2004-05-11 2012-12-26 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
EP1746123A4 (en) * 2004-05-11 2012-03-21 Jsr Corp METHOD FOR FORMING A FILM FROM ORGANIC SILICON OXIDE, ORGANIC SILICON OXIDE FILM, WIRE STRUCTURE, SEMICONDUCTOR DEVICE AND COMPOSITION FOR FILMING
JP4355939B2 (ja) * 2004-07-23 2009-11-04 Ｊｓｒ株式会社 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法
JP2007204626A (ja) * 2006-02-02 2007-08-16 Jsr Corp ポリマーの製造方法、ポリマー、絶縁膜形成用組成物、絶縁膜の製造方法、およびシリカ系絶縁膜
JP5120547B2 (ja) * 2006-02-02 2013-01-16 Ｊｓｒ株式会社 有機シリカ系膜およびその形成方法、半導体装置の絶縁膜形成用組成物およびその製造方法、ならびに配線構造体および半導体装置
JP5218765B2 (ja) * 2006-03-29 2013-06-26 Ｊｓｒ株式会社 ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜
JP2007273494A (ja) * 2006-03-30 2007-10-18 Fujitsu Ltd 絶縁膜形成用組成物及び半導体装置の製造方法
JP4877486B2 (ja) * 2006-05-31 2012-02-15 Ｊｓｒ株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
US20100140754A1 (en) * 2006-08-15 2010-06-10 Jsr Corporation Film-forming material, silicon-containing insulating film and method for forming the same
JP5380797B2 (ja) * 2006-08-21 2014-01-08 富士通株式会社 半導体デバイスの製造方法
WO2008066060A1 (fr) * 2006-11-30 2008-06-05 Jsr Corporation Procédé de fabrication d'un polymère, composition de formation d'un film isolant et film isolant de silice et son procédé de fabrication
CN101611043B (zh) * 2007-02-14 2013-03-13 Jsr株式会社 含硅膜形成用材料、以及含硅绝缘膜及其形成方法
JP4766267B2 (ja) * 2007-02-26 2011-09-07 Ｊｓｒ株式会社 膜およびその形成方法、ならびに半導体装置
EP2128897B1 (en) * 2007-03-16 2015-05-06 Fujitsu Limited Silicon dielectric treating agent for use after etching, process for producing semiconductor device, and semiconductor device
US7485949B2 (en) 2007-05-02 2009-02-03 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device
WO2009008424A1 (ja) * 2007-07-10 2009-01-15 Jsr Corporation ケイ素化合物の製造方法
JP2009032807A (ja) * 2007-07-25 2009-02-12 Nec Corp 半導体装置及びその製造方法
JP5304033B2 (ja) * 2007-08-31 2013-10-02 富士通株式会社 半導体装置の製造方法
KR20100126327A (ko) * 2008-03-26 2010-12-01 제이에스알 가부시끼가이샤 화학 기상 성장법용 재료, 규소 함유 절연막 및 그의 제조 방법
JP5451754B2 (ja) * 2008-05-28 2014-03-26 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド ターニング微細構造を有する光導波路パネル及びその製造方法、並びにディスプレイ装置
JP5365785B2 (ja) * 2008-05-30 2013-12-11 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
JP2010090248A (ja) * 2008-10-07 2010-04-22 Jsr Corp 多層レジストプロセス用シリコン含有膜形成用組成物及びシリコン含有膜並びにパターン形成方法
JP4379637B1 (ja) 2009-03-30 2009-12-09 Ｊｓｒ株式会社 有機ケイ素化合物の製造方法
BRPI1011614A2 (pt) 2009-05-29 2016-03-15 Qualcomm Mems Technologies Inc aparelhos de iluminação e respectivo método de fabricação
US8692198B2 (en) 2010-04-21 2014-04-08 Sionyx, Inc. Photosensitive imaging devices and associated methods
CN103081128B (zh) 2010-06-18 2016-11-02 西奥尼克斯公司 高速光敏设备及相关方法
US9496308B2 (en) 2011-06-09 2016-11-15 Sionyx, Llc Process module for increasing the response of backside illuminated photosensitive imagers and associated methods
WO2013010127A2 (en) 2011-07-13 2013-01-17 Sionyx, Inc. Biometric imaging devices and associated methods
US9064764B2 (en) 2012-03-22 2015-06-23 Sionyx, Inc. Pixel isolation elements, devices, and associated methods
JP6151484B2 (ja) * 2012-06-11 2017-06-21 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
TW201435132A (zh) * 2013-02-22 2014-09-16 Applied Materials Inc 包含ＳｉＯＣ的膜的催化性原子層沉積
KR20150121217A (ko) * 2013-03-01 2015-10-28 어플라이드 머티어리얼스, 인코포레이티드 ＳｉＣＮ 또는 ＳｉＣＯＮ을 포함하는 필름의 저온 원자층 증착
US9209345B2 (en) 2013-06-29 2015-12-08 Sionyx, Inc. Shallow trench textured regions and associated methods
US20170103888A1 (en) * 2015-10-13 2017-04-13 Entegris, Inc. AMINE CATALYSTS FOR LOW TEMPERATURE ALD/CVD SiO2 DEPOSITION USING HEXACHLORODISILANE/H2O
JP2018085358A (ja) * 2016-11-21 2018-05-31 日立化成株式会社 半導体装置の製造方法
JP6920082B2 (ja) * 2017-03-17 2021-08-18 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
US11760842B2 (en) 2019-04-08 2023-09-19 Merck Patent Gmbh Composition comprising block copolymer, and method for producing siliceous film using the same
CN113429574B (zh) * 2021-07-19 2023-05-30 王军 聚碳硅烷及其制备方法
CN113985701B (zh) * 2021-12-06 2024-11-01 潍坊星泰克微电子材料有限公司 负性光刻胶组合物、制备方法及形成光刻胶图案的方法
JP2024004377A (ja) * 2022-06-28 2024-01-16 東京エレクトロン株式会社 炭素含有膜の形成方法

Family Cites Families (76)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5461299A (en) * 1977-10-26 1979-05-17 Tokushiyu Muki Zairiyou Kenkiy Polycarbosilane partially containing siloxane linkage and method of making same
JPH0761853B2 (ja) 1987-04-06 1995-07-05 東京応化工業株式会社 シリコン酸化膜の形成方法及び装置
JP2624254B2 (ja) 1987-05-22 1997-06-25 東京応化工業株式会社 シリカ系被膜の膜質改善方法
JPH0829932B2 (ja) 1987-08-26 1996-03-27 東京応化工業株式会社 シリカ系被膜の膜質改善方法
JPH01194980A (ja) 1988-01-26 1989-08-04 Sumitomo Chem Co Ltd シリカ系被膜形成方法及び形成被膜
JPH01248540A (ja) 1988-03-29 1989-10-04 Nec Corp 塗布膜の形成方法
KR910008980B1 (ko) 1988-12-20 1991-10-26 현대전자산업 주식회사 자외선을 이용한 s.o.g 박막 경화 방법
JPH0330427A (ja) 1989-06-28 1991-02-08 Kemitoronikusu:Kk 絶縁膜の低温形成法
JPH04233732A (ja) * 1990-08-16 1992-08-21 Motorola Inc 半導体の製造工程で使用するスピン・オン誘電体
JP3296440B2 (ja) * 1991-10-17 2002-07-02 鐘淵化学工業株式会社 ケイ素系ハイブリッド材料
JP3320440B2 (ja) 1992-03-17 2002-09-03 触媒化成工業株式会社 被膜形成用塗布液およびその製造方法
JP3073313B2 (ja) 1992-05-12 2000-08-07 触媒化成工業株式会社 半導体装置およびその製造方法
JPH0829932A (ja) 1994-07-15 1996-02-02 Konica Corp ハロゲン化銀写真感光材料
US6652922B1 (en) 1995-06-15 2003-11-25 Alliedsignal Inc. Electron-beam processed films for microelectronics structures
US5789325A (en) * 1996-04-29 1998-08-04 Dow Corning Corporation Coating electronic substrates with silica derived from polycarbosilane
EP0851463A1 (en) * 1996-12-24 1998-07-01 STMicroelectronics S.r.l. Process for realizing an intermediate dielectric layer for enhancing the planarity in semiconductor electronic devices
EP0883156B9 (en) * 1997-06-03 2005-09-21 Hitachi Chemical Co., Ltd. Electromagnetically shielding bonding film
US6042994A (en) * 1998-01-20 2000-03-28 Alliedsignal Inc. Nanoporous silica dielectric films modified by electron beam exposure and having low dielectric constant and low water content
JP3521737B2 (ja) 1998-03-30 2004-04-19 セイコーエプソン株式会社 薄膜半導体装置の製造方法、アクティブマトリックス基板の製造方法及びテトラメトキシシランの塗布装置
JP4473352B2 (ja) 1998-05-26 2010-06-02 東京応化工業株式会社 低比誘電率シリカ系被膜、それを形成するための塗布液、その塗布液の調製方法
JPH11340220A (ja) 1998-05-26 1999-12-10 Tokyo Ohka Kogyo Co Ltd シリカ系被膜形成用塗布液及びその製造方法
US6323253B1 (en) * 1998-06-01 2001-11-27 Loctite Corporation Flame-retardant UV and UV/moisture curable silicone compositions
JP2000109695A (ja) 1998-08-04 2000-04-18 Jsr Corp 光硬化性樹脂組成物および硬化膜
JP2000290590A (ja) 1999-04-12 2000-10-17 Jsr Corp 膜形成用組成物、膜の形成方法および低密度化膜
US6204202B1 (en) * 1999-04-14 2001-03-20 Alliedsignal, Inc. Low dielectric constant porous films
JP4305587B2 (ja) * 1999-04-27 2009-07-29 Ｊｓｒ株式会社 半導体装置用の層間絶縁膜形成用材料
JP2000313612A (ja) 1999-04-28 2000-11-14 Asahi Chem Ind Co Ltd 絶縁薄膜製造用組成物
US6225238B1 (en) * 1999-06-07 2001-05-01 Allied Signal Inc Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes
US6204201B1 (en) 1999-06-11 2001-03-20 Electron Vision Corporation Method of processing films prior to chemical vapor deposition using electron beam processing
ES2233433T3 (es) * 1999-08-20 2005-06-16 Bayer Materialscience Ag Composicion de revestimiento inorganica, un procedimiento para su preparacion, asi como su uso.
JP2001110802A (ja) 1999-10-06 2001-04-20 Matsushita Electric Ind Co Ltd 絶縁膜の形成方法
JP4756526B2 (ja) * 1999-10-25 2011-08-24 富士通株式会社 多孔質化低誘電率絶縁膜の形成方法及び該方法で形成された多孔質化低誘電率絶縁膜及び該多孔質化低誘電率絶縁膜を用いた半導体装置
US6761975B1 (en) * 1999-12-23 2004-07-13 Honeywell International Inc. Polycarbosilane adhesion promoters for low dielectric constant polymeric materials
JP4195773B2 (ja) * 2000-04-10 2008-12-10 Ｊｓｒ株式会社 層間絶縁膜形成用組成物、層間絶縁膜の形成方法およびシリカ系層間絶縁膜
US6902771B2 (en) * 2000-02-01 2005-06-07 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
JP3941327B2 (ja) * 2000-02-01 2007-07-04 Ｊｓｒ株式会社 シリカ系膜の製造方法、シリカ系膜、絶縁膜および半導体装置
US20030157340A1 (en) * 2000-02-01 2003-08-21 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
US20030104225A1 (en) * 2000-02-01 2003-06-05 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
JP3604007B2 (ja) * 2000-03-29 2004-12-22 富士通株式会社 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法
JP4117436B2 (ja) * 2000-04-10 2008-07-16 Ｊｓｒ株式会社 膜形成用組成物、膜の形成方法およびシリカ系膜
US7128976B2 (en) * 2000-04-10 2006-10-31 Jsr Corporation Composition for film formation, method of film formation, and silica-based film
DE10041417A1 (de) * 2000-08-23 2002-03-21 Beru Ag Elektronische Ansteuerung für Heizelemente
JP4655343B2 (ja) 2000-08-28 2011-03-23 Ｊｓｒ株式会社 膜形成用組成物および絶縁膜形成用材料
JP2002129103A (ja) 2000-10-23 2002-05-09 Jsr Corp 膜形成用組成物および絶縁膜形成用材料
US7026053B2 (en) * 2001-01-29 2006-04-11 Jsr Corporation Process for producing silica-based film, silica-based film, insulating film, and semiconductor device
JP3900246B2 (ja) 2001-03-13 2007-04-04 信越化学工業株式会社 高分子化合物、レジスト材料及びパターン形成方法
JP4545973B2 (ja) * 2001-03-23 2010-09-15 富士通株式会社 シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法
US6383913B1 (en) 2001-04-06 2002-05-07 United Microelectronics Corp. Method for improving surface wettability of low k material
KR100451044B1 (ko) * 2001-06-07 2004-10-02 주식회사 엘지화학 유기실리케이트 중합체의 제조방법, 및 이를 이용한절연막의 제조방법
US20030054115A1 (en) 2001-09-14 2003-03-20 Ralph Albano Ultraviolet curing process for porous low-K materials
US6756085B2 (en) * 2001-09-14 2004-06-29 Axcelis Technologies, Inc. Ultraviolet curing processes for advanced low-k materials
US20040058090A1 (en) 2001-09-14 2004-03-25 Carlo Waldfried Low temperature UV pretreating of porous low-k materials
JP2003115482A (ja) * 2001-10-05 2003-04-18 Asahi Kasei Corp 絶縁膜形成用組成物
JP3797260B2 (ja) * 2002-03-29 2006-07-12 Ｊｓｒ株式会社 半導体装置用カルボシラン系膜の製造方法、および半導体装置用カルボシラン系絶縁膜
JP4142643B2 (ja) 2002-04-18 2008-09-03 エルジー・ケム・リミテッド 有機シリケート重合体およびこれを含む絶縁膜
US6844568B2 (en) * 2002-04-25 2005-01-18 Kyocera Corporation Photoelectric conversion device and manufacturing process thereof
KR100515583B1 (ko) 2002-06-27 2005-09-20 주식회사 엘지화학 유기실리케이트 중합체 및 이를 함유하는 절연막
US6809041B2 (en) * 2002-07-01 2004-10-26 Rensselaer Polytechnic Institute Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane
US20040109950A1 (en) * 2002-09-13 2004-06-10 Shipley Company, L.L.C. Dielectric materials
JP4344841B2 (ja) 2003-05-30 2009-10-14 独立行政法人産業技術総合研究所 低誘電率絶縁膜の形成方法
KR20050024721A (ko) * 2003-09-01 2005-03-11 삼성전자주식회사 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막
US7462678B2 (en) 2003-09-25 2008-12-09 Jsr Corporation Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
JP2005175060A (ja) 2003-12-09 2005-06-30 Jsr Corp 絶縁膜およびその形成方法、ならびに膜形成用組成物
JP4737361B2 (ja) 2003-12-19 2011-07-27 Ｊｓｒ株式会社 絶縁膜およびその形成方法
WO2005068541A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
TW200536621A (en) * 2004-01-16 2005-11-16 Jsr Corp Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
JP2005272816A (ja) * 2004-02-26 2005-10-06 Jsr Corp ポリマーおよびその製造方法、絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法
EP1719793A4 (en) * 2004-02-26 2009-05-20 Jsr Corp POLYMER AND MANUFACTURING METHOD THEREFOR, COMPOSITION FOR FORMING AN INSULATING FILM AND PRODUCTION METHOD THEREFOR
EP1746123A4 (en) * 2004-05-11 2012-03-21 Jsr Corp METHOD FOR FORMING A FILM FROM ORGANIC SILICON OXIDE, ORGANIC SILICON OXIDE FILM, WIRE STRUCTURE, SEMICONDUCTOR DEVICE AND COMPOSITION FOR FILMING
JP5110239B2 (ja) 2004-05-11 2012-12-26 Ｊｓｒ株式会社 有機シリカ系膜の形成方法、膜形成用組成物
US20050272220A1 (en) * 2004-06-07 2005-12-08 Carlo Waldfried Ultraviolet curing process for spin-on dielectric materials used in pre-metal and/or shallow trench isolation applications
EP1615260A3 (en) 2004-07-09 2009-09-16 JSR Corporation Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device
JP4355939B2 (ja) 2004-07-23 2009-11-04 Ｊｓｒ株式会社 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法
US7358317B2 (en) * 2004-09-22 2008-04-15 Jsr Corporation Polycarbosilane and method of producing the same
JP2006152063A (ja) * 2004-11-26 2006-06-15 Jsr Corp 新規ポリカルボシランおよびその製造方法、膜形成用組成物、ならびに膜およびその形成方法
WO2007055097A1 (ja) * 2005-11-11 2007-05-18 Jsr Corporation ポリカルボシランおよびその製造方法、塗布用シリカ系組成物、およびシリカ系膜

Also Published As

Publication number Publication date
JP5110239B2 (ja) 2012-12-26
WO2005108468A1 (ja) 2005-11-17
US8268403B2 (en) 2012-09-18
EP1746122A4 (en) 2011-06-29
KR101163251B1 (ko) 2012-07-05
JP2005350653A (ja) 2005-12-22
US20080268264A1 (en) 2008-10-30
KR20070010081A (ko) 2007-01-19
EP1746122A1 (en) 2007-01-24
TW200613375A (en) 2006-05-01
EP1746122B1 (en) 2013-06-12

Similar Documents

Publication Publication Date Title
TWI356830B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TWI304077B (en) Method of forming organic silica-based film
CN113015940B (zh) 用于高分辨率图案化的含硅烷醇有机-无机杂化涂层
TWI431040B (zh) Organic silicon dioxide film and method for forming the same, composition for forming insulating film of semiconductor device and manufacturing method thereof, and wiring structure
TWI286155B (en) Composition for film formation, method of film formation, and silica-based film
TWI292349B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TWI267703B (en) Radiation-curing resin composition and preservation method thereof, forming method of curing film, forming method and operating method of pattern, electronic device and optical wave guide
JP5644339B2 (ja) レジスト下層膜形成用組成物、レジスト下層膜及びパターン形成方法
WO2005036269A1 (ja) 放射線硬化性組成物、その保存方法、硬化膜形成方法、パターン形成方法、パターン使用方法、電子部品及び光導波路
KR20100038062A (ko) 규소 함유막 형성용 조성물, 규소 함유막 형성 기판 및 패턴 형성 방법
TW200951183A (en) Composition having silicone-containing polymer and cured product thereof
WO2012176291A1 (ja) シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
JP2012004349A (ja) シリコンオキシナイトライド膜の形成方法およびそれにより製造されたシリコンオキシナイトライド膜付き基板
TW200529252A (en) Insulating film, method for forming same and composition for forming film
CN114207043B (zh) 低介电常数硅质膜制造用组合物和使用其来制造固化膜和电子器件的方法
JP7419365B2 (ja) アモルファスシリコン犠牲膜の製造方法およびアモルファスシリコン形成組成物
TWI314936B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN113227215B (zh) 包含嵌段共聚物的用于形成硅质膜的组合物以及使用该组合物制造硅质膜的方法
TW200835756A (en) Composition for forming coating and coating formed of composition
TWI227264B (en) Stacked film, method for the formation of stacked film, insulating film, and substrate for semiconductor
JP2003115482A (ja) 絶縁膜形成用組成物
US20050196535A1 (en) Solvents and methods using same for removing silicon-containing residues from a substrate
EP4592752A2 (en) Composition for forming metal-containing film and patterning process
EP4579345A2 (en) Composition for forming silicon-containing anti-reflective film and patterning method
KR102861965B1 (ko) 높은 해상도 패터닝을 위한 실라놀-함유 유기-무기 하이브리드 코팅

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees