JP2007273494A - 絶縁膜形成用組成物及び半導体装置の製造方法 - Google Patents
絶縁膜形成用組成物及び半導体装置の製造方法 Download PDFInfo
- Publication number
- JP2007273494A JP2007273494A JP2006093438A JP2006093438A JP2007273494A JP 2007273494 A JP2007273494 A JP 2007273494A JP 2006093438 A JP2006093438 A JP 2006093438A JP 2006093438 A JP2006093438 A JP 2006093438A JP 2007273494 A JP2007273494 A JP 2007273494A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- film
- forming
- semiconductor device
- porous
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 58
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 239000000203 mixture Substances 0.000 title claims abstract description 39
- 238000009413 insulation Methods 0.000 title abstract 4
- 150000003377 silicon compounds Chemical class 0.000 claims abstract description 32
- 239000000758 substrate Substances 0.000 claims abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 29
- 150000001875 compounds Chemical class 0.000 claims description 13
- 239000000377 silicon dioxide Substances 0.000 claims description 12
- 229920003257 polycarbosilane Polymers 0.000 claims description 7
- 229920001709 polysilazane Polymers 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 3
- 238000000034 method Methods 0.000 abstract description 42
- 239000011229 interlayer Substances 0.000 description 55
- 239000010949 copper Substances 0.000 description 26
- 238000001723 curing Methods 0.000 description 26
- 230000004888 barrier function Effects 0.000 description 21
- 239000002184 metal Substances 0.000 description 17
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000011248 coating agent Substances 0.000 description 14
- 238000000576 coating method Methods 0.000 description 14
- 229920002120 photoresistant polymer Polymers 0.000 description 12
- 239000011148 porous material Substances 0.000 description 12
- 238000005530 etching Methods 0.000 description 10
- 238000010438 heat treatment Methods 0.000 description 10
- 239000007789 gas Substances 0.000 description 7
- 239000010410 layer Substances 0.000 description 7
- 229910052581 Si3N4 Inorganic materials 0.000 description 6
- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 6
- 238000004132 cross linking Methods 0.000 description 6
- 238000009792 diffusion process Methods 0.000 description 6
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 238000004528 spin coating Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 5
- 238000002955 isolation Methods 0.000 description 5
- -1 phenylvinyl Chemical group 0.000 description 5
- 238000005498 polishing Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 238000004544 sputter deposition Methods 0.000 description 5
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 4
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000007423 decrease Effects 0.000 description 4
- 238000001312 dry etching Methods 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000000206 photolithography Methods 0.000 description 4
- 229910000077 silane Inorganic materials 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- ZWEHNKRNPOVVGH-UHFFFAOYSA-N 2-Butanone Chemical compound CCC(C)=O ZWEHNKRNPOVVGH-UHFFFAOYSA-N 0.000 description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 238000004380 ashing Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
- 229910052739 hydrogen Inorganic materials 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical group C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- 238000004566 IR spectroscopy Methods 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 238000003848 UV Light-Curing Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000004927 clay Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- DIOQZVSQGTUSAI-UHFFFAOYSA-N decane Chemical compound CCCCCCCCCC DIOQZVSQGTUSAI-UHFFFAOYSA-N 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- 150000002894 organic compounds Chemical class 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
- SCPYDCQAZCOKTP-UHFFFAOYSA-N silanol Chemical compound [SiH3]O SCPYDCQAZCOKTP-UHFFFAOYSA-N 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 1
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 1
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 1
- LDMRLRNXHLPZJN-UHFFFAOYSA-N 3-propoxypropan-1-ol Chemical compound CCCOCCCO LDMRLRNXHLPZJN-UHFFFAOYSA-N 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- XDTMQSROBMDMFD-UHFFFAOYSA-N Cyclohexane Chemical compound C1CCCCC1 XDTMQSROBMDMFD-UHFFFAOYSA-N 0.000 description 1
- 239000007818 Grignard reagent Substances 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910020177 SiOF Inorganic materials 0.000 description 1
- 239000000654 additive Substances 0.000 description 1
- 125000003282 alkyl amino group Chemical group 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 125000001797 benzyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])* 0.000 description 1
- 235000010290 biphenyl Nutrition 0.000 description 1
- 239000004305 biphenyl Substances 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 238000006664 bond formation reaction Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 125000004177 diethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 125000000118 dimethyl group Chemical group [H]C([H])([H])* 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 150000004795 grignard reagents Chemical class 0.000 description 1
- 230000002140 halogenating effect Effects 0.000 description 1
- PYGSKMBEVAICCR-UHFFFAOYSA-N hexa-1,5-diene Chemical group C=CCCC=C PYGSKMBEVAICCR-UHFFFAOYSA-N 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical group CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 1
- 125000000286 phenylethyl group Chemical group [H]C1=C([H])C([H])=C(C([H])=C1[H])C([H])([H])C([H])([H])* 0.000 description 1
- 238000006552 photochemical reaction Methods 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000002407 reforming Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000001947 vapour-phase growth Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31604—Deposition from a gas or vapour
- H01L21/31633—Deposition of carbon doped silicon oxide, e.g. SiOC
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/16—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02211—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound being a silane, e.g. disilane, methylsilane or chlorosilane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02219—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen
- H01L21/02222—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and nitrogen the compound being a silazane
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Materials Engineering (AREA)
- Wood Science & Technology (AREA)
- Organic Chemistry (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
- Silicon Polymers (AREA)
Abstract
【解決手段】基板10上に、多孔質の第1の絶縁膜38を形成する工程と、第1の絶縁膜38上にSi−CH3結合を30〜90%の割合で含有するシリコン化合物を含む第2の絶縁膜40を形成する工程と、第1の絶縁膜38上に第2の絶縁膜40が形成された状態で紫外線を照射し、第1の絶縁膜38を硬化させる工程とを有する。これにより、CH3基を脱離する波長域を有する紫外線が第2の絶縁膜により十分に吸収され、第1の絶縁膜では紫外線キュアによる高強度化が優先的に進行するので、第2の絶縁膜の誘電率を増加することなく膜密度を向上することができる。
【選択図】図3
Description
T ∝ CR
として表される。この式において、配線間隔をd、電極面積(対向する配線の側面の面積)をS、配線間に設けられている絶縁材料の誘電率をεr、真空誘電率をε0と表すと、配線間の容量Cは、
C =ε0εrS/d
として表される。したがって、配線遅延を小さくするには、絶縁膜の低誘電率化が有効な手段となる。
前記シリコン化合物を溶解する有機溶媒と
を有することを特徴とする絶縁膜形成用組成物。
前記シリコン化合物は、一般式
前記シリコン化合物は、一般式
前記第1の絶縁膜上に、Si−CH3結合を30〜90%の割合で含有するシリコン化合物を含む第2の絶縁膜を形成する工程と、
前記第1の絶縁膜上に前記第2の絶縁膜が形成された状態で紫外線を照射し、前記第1の絶縁膜を硬化させる工程と
を有することを特徴とする半導体装置の製造方法。
前記第1の絶縁膜を硬化させる工程では、紫外線の照射により前記第2の絶縁膜中のCH3基を切断し、前記第2の絶縁膜の膜密度を増加させる
ことを特徴とする半導体装置の製造方法。
前記第1の絶縁膜を形成する工程では、膜中にSi−CH3結合を3〜60%の割合で含有する前記第1の絶縁膜を形成する
ことを特徴とする半導体装置の製造方法。
前記第1の絶縁膜を硬化させる工程では、50〜470℃の温度で過熱した状態で紫外線を照射する
ことを特徴とする半導体装置の製造方法。
前記第1の絶縁膜を形成する工程は、前記第1の絶縁膜を形成するための第1の絶縁膜形成用組成物を塗布して塗布膜を形成する工程と、熱処理により前記塗布膜を半硬化させる工程とを有する
ことを特徴とする半導体装置の製造方法。
前記塗布膜を半硬化させる工程では、膜中における架橋率が10〜90%となるように熱処理条件を設定する
ことを特徴とする半導体装置の製造方法。
前記第2の絶縁膜を形成する工程は、前記第2の絶縁膜を形成するための第2の絶縁膜形成用組成物を塗布して塗布膜を形成する工程と、熱処理により前記塗布膜を半硬化させる工程とを有する
ことを特徴とする半導体装置の製造方法。
前記塗布膜を半硬化させる工程では、膜中における架橋率が10〜90%となるように熱処理条件を設定する
ことを特徴とする半導体装置の製造方法。
前記シリコン化合物として、一般式
前記シリコン化合物として、一般式
前記第1の絶縁膜を形成する工程では、多孔質シリカよりなる前記第1の絶縁膜を形成する
ことを特徴とする半導体装置の製造方法。
12…素子分離膜
14…素子領域
16…ゲート絶縁膜
18…ゲート電極
22…ソース/ドレイン領域
24…MOSトランジスタ
26…層間絶縁膜
28…ストッパ膜
30…コンタクトホール
32,48,74…バリアメタル
34…タングステン膜
35,77a…コンタクトプラグ
36,40,52,56,60,78…絶縁膜
38,54,58…多孔質の層間絶縁膜
42,62,68…フォトレジスト膜
44,64,70…開口部
46,72…配線溝
50,76…Cu膜
51,77b…配線
52,78…Cu拡散防止用の絶縁膜
66…ビアホール
Claims (10)
- Si−CH3結合を30〜90%の割合で含有するシリコン化合物と、
前記シリコン化合物を溶解する有機溶媒と
を有することを特徴とする絶縁膜形成用組成物。 - 基板上に、多孔質の第1の絶縁膜を形成する工程と、
前記第1の絶縁膜上に、Si−CH3結合を30〜90%の割合で含有するシリコン化合物を含む第2の絶縁膜を形成する工程と、
前記第1の絶縁膜上に前記第2の絶縁膜が形成された状態で紫外線を照射し、前記第1の絶縁膜を硬化させる工程と
を有することを特徴とする半導体装置の製造方法。 - 請求項4記載の半導体装置の製造方法において、
前記第1の絶縁膜を硬化させる工程では、紫外線の照射により前記第2の絶縁膜中のCH3基を切断し、前記第2の絶縁膜の膜密度を増加させる
ことを特徴とする半導体装置の製造方法。 - 請求項4又は5記載の半導体装置の製造方法において、
前記第1の絶縁膜を形成する工程では、膜中にSi−CH3結合を3〜60%の割合で含有する前記第1の絶縁膜を形成する
ことを特徴とする半導体装置の製造方法。 - 請求項4乃至6のいずれか1項に記載の半導体装置の製造方法において、
前記第1の絶縁膜を硬化させる工程では、50〜470℃の温度で過熱した状態で紫外線を照射する
ことを特徴とする半導体装置の製造方法。 - 請求項4乃至9のいずれか1項に記載の半導体装置の製造方法において、
前記第1の絶縁膜を形成する工程では、多孔質シリカよりなる前記第1の絶縁膜を形成する
ことを特徴とする半導体装置の製造方法。
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006093438A JP2007273494A (ja) | 2006-03-30 | 2006-03-30 | 絶縁膜形成用組成物及び半導体装置の製造方法 |
TW095122095A TWI311784B (en) | 2006-03-30 | 2006-06-20 | Composition for forming insulating film and method for fabricating semiconductor device |
DE102006029335A DE102006029335A1 (de) | 2006-03-30 | 2006-06-23 | Zusammensetzung zum Ausbilden eines Isolierfilms und Verfahren zum Herstellen einer Halbleitervorrichtung |
US11/475,000 US7476970B2 (en) | 2006-03-30 | 2006-06-27 | Composition for forming insulating film and method for fabricating semiconductor device |
CN2006101060043A CN101045820B (zh) | 2006-03-30 | 2006-07-19 | 形成绝缘膜的组合物以及制造半导体器件的方法 |
KR1020060067926A KR100785727B1 (ko) | 2006-03-30 | 2006-07-20 | 절연막 형성용 조성물 및 반도체 장치의 제조 방법 |
US12/314,279 US7985700B2 (en) | 2006-03-30 | 2008-12-08 | Composition for forming insulating film and method for fabricating semiconductor device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2006093438A JP2007273494A (ja) | 2006-03-30 | 2006-03-30 | 絶縁膜形成用組成物及び半導体装置の製造方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
JP2007273494A true JP2007273494A (ja) | 2007-10-18 |
Family
ID=38460372
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2006093438A Pending JP2007273494A (ja) | 2006-03-30 | 2006-03-30 | 絶縁膜形成用組成物及び半導体装置の製造方法 |
Country Status (6)
Country | Link |
---|---|
US (2) | US7476970B2 (ja) |
JP (1) | JP2007273494A (ja) |
KR (1) | KR100785727B1 (ja) |
CN (1) | CN101045820B (ja) |
DE (1) | DE102006029335A1 (ja) |
TW (1) | TWI311784B (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8716148B2 (en) | 2010-06-18 | 2014-05-06 | Fujitsu Semiconductor Limited | Semiconductor device manufacturing method |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007273494A (ja) * | 2006-03-30 | 2007-10-18 | Fujitsu Ltd | 絶縁膜形成用組成物及び半導体装置の製造方法 |
JP5470687B2 (ja) * | 2007-08-10 | 2014-04-16 | 富士通株式会社 | シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置 |
JP2011082308A (ja) * | 2009-10-06 | 2011-04-21 | Panasonic Corp | 半導体装置の製造方法 |
WO2013170124A1 (en) | 2012-05-10 | 2013-11-14 | Burning Bush Group | High performance silicon based thermal coating compositions |
JP6158921B2 (ja) | 2012-07-03 | 2017-07-05 | バーニング ブッシュ グループ、 エルエルシー | 高性能ケイ素系コーティング組成物 |
US8748317B2 (en) * | 2012-08-03 | 2014-06-10 | Infineon Technologies Austria Ag | Method of manufacturing a semiconductor device including a dielectric structure |
CN104078415A (zh) * | 2013-03-28 | 2014-10-01 | 中芯国际集成电路制造(上海)有限公司 | 互连结构的制造方法 |
CN104658967B (zh) * | 2013-11-21 | 2017-10-20 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法 |
JP6668288B2 (ja) * | 2017-04-04 | 2020-03-18 | メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングMerck Patent GmbH | 膜形成組成物 |
CN115926508B (zh) * | 2022-12-12 | 2023-09-19 | 浙江双金粉末涂料有限公司 | 一种降低热量传递且成膜致密的粉末涂料及成膜方法 |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1079381A (ja) * | 1996-09-03 | 1998-03-24 | Toshiba Corp | 絶縁膜パターンの形成方法および感光性組成物 |
JPH10144672A (ja) * | 1996-11-08 | 1998-05-29 | Fujitsu Ltd | 半導体装置の絶縁膜形成方法及び絶縁膜形成材料 |
JPH1154498A (ja) * | 1997-07-31 | 1999-02-26 | Fujitsu Ltd | 低誘電率絶縁膜とその形成方法、及びそれを用いた半導体装置 |
JP2003273100A (ja) * | 2002-03-18 | 2003-09-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2005175060A (ja) * | 2003-12-09 | 2005-06-30 | Jsr Corp | 絶縁膜およびその形成方法、ならびに膜形成用組成物 |
JP2005183697A (ja) * | 2003-12-19 | 2005-07-07 | Jsr Corp | 絶縁膜およびその形成方法、ならびに膜形成用組成物。 |
JP2005350653A (ja) * | 2004-05-11 | 2005-12-22 | Jsr Corp | 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物 |
WO2005122195A2 (en) * | 2004-06-04 | 2005-12-22 | International Business Machines Corporation | Fabrication of interconnect structures |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR0143873B1 (ko) * | 1993-02-19 | 1998-08-17 | 순페이 야마자끼 | 절연막 및 반도체장치 및 반도체 장치 제조방법 |
JP3418458B2 (ja) * | 1993-08-31 | 2003-06-23 | 富士通株式会社 | 半導体装置の製造方法 |
JP3318408B2 (ja) * | 1993-10-06 | 2002-08-26 | 東レ・ダウコーニング・シリコーン株式会社 | 粉状シリコーン硬化物およびその製造方法 |
US5534731A (en) * | 1994-10-28 | 1996-07-09 | Advanced Micro Devices, Incorporated | Layered low dielectric constant technology |
US5789325A (en) * | 1996-04-29 | 1998-08-04 | Dow Corning Corporation | Coating electronic substrates with silica derived from polycarbosilane |
JP3729226B2 (ja) * | 1997-09-17 | 2005-12-21 | 富士通株式会社 | 半導体集積回路装置及びその製造方法 |
US6162743A (en) * | 1998-02-10 | 2000-12-19 | Chu; Cheng-Jye | Low dielectric constant film and method thereof |
JP2000277511A (ja) | 1999-03-26 | 2000-10-06 | Fujitsu Ltd | 絶縁膜の形成材料及び半導体装置の製造方法 |
JP3483500B2 (ja) | 1999-05-28 | 2004-01-06 | 富士通株式会社 | 絶縁膜形成材料、絶縁膜形成方法及び半導体装置 |
JP4408994B2 (ja) * | 1999-07-13 | 2010-02-03 | Azエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物 |
JP3604007B2 (ja) * | 2000-03-29 | 2004-12-22 | 富士通株式会社 | 低誘電率被膜形成材料、及びそれを用いた被膜と半導体装置の製造方法 |
JP4722269B2 (ja) * | 2000-08-29 | 2011-07-13 | Azエレクトロニックマテリアルズ株式会社 | 低誘電率多孔質シリカ質膜、半導体装置およびコーティング組成物、ならびに低誘電率多孔質シリカ質膜の製造方法 |
JP4839505B2 (ja) | 2000-10-16 | 2011-12-21 | 日立化成工業株式会社 | 接着フィルム、その製造法及び接着フィルム付き半導体装置 |
JP3886779B2 (ja) | 2001-11-02 | 2007-02-28 | 富士通株式会社 | 絶縁膜形成用材料及び絶縁膜の形成方法 |
JP4471564B2 (ja) * | 2002-10-31 | 2010-06-02 | 日揮触媒化成株式会社 | 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液の調製方法 |
JP4311947B2 (ja) | 2003-02-17 | 2009-08-12 | 東京エレクトロン株式会社 | 半導体装置 |
JP2007273494A (ja) * | 2006-03-30 | 2007-10-18 | Fujitsu Ltd | 絶縁膜形成用組成物及び半導体装置の製造方法 |
-
2006
- 2006-03-30 JP JP2006093438A patent/JP2007273494A/ja active Pending
- 2006-06-20 TW TW095122095A patent/TWI311784B/zh not_active IP Right Cessation
- 2006-06-23 DE DE102006029335A patent/DE102006029335A1/de not_active Ceased
- 2006-06-27 US US11/475,000 patent/US7476970B2/en active Active
- 2006-07-19 CN CN2006101060043A patent/CN101045820B/zh not_active Expired - Fee Related
- 2006-07-20 KR KR1020060067926A patent/KR100785727B1/ko active IP Right Grant
-
2008
- 2008-12-08 US US12/314,279 patent/US7985700B2/en not_active Expired - Fee Related
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH1079381A (ja) * | 1996-09-03 | 1998-03-24 | Toshiba Corp | 絶縁膜パターンの形成方法および感光性組成物 |
JPH10144672A (ja) * | 1996-11-08 | 1998-05-29 | Fujitsu Ltd | 半導体装置の絶縁膜形成方法及び絶縁膜形成材料 |
JPH1154498A (ja) * | 1997-07-31 | 1999-02-26 | Fujitsu Ltd | 低誘電率絶縁膜とその形成方法、及びそれを用いた半導体装置 |
JP2003273100A (ja) * | 2002-03-18 | 2003-09-26 | Fujitsu Ltd | 半導体装置及びその製造方法 |
JP2005175060A (ja) * | 2003-12-09 | 2005-06-30 | Jsr Corp | 絶縁膜およびその形成方法、ならびに膜形成用組成物 |
JP2005183697A (ja) * | 2003-12-19 | 2005-07-07 | Jsr Corp | 絶縁膜およびその形成方法、ならびに膜形成用組成物。 |
JP2005350653A (ja) * | 2004-05-11 | 2005-12-22 | Jsr Corp | 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物 |
WO2005122195A2 (en) * | 2004-06-04 | 2005-12-22 | International Business Machines Corporation | Fabrication of interconnect structures |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8716148B2 (en) | 2010-06-18 | 2014-05-06 | Fujitsu Semiconductor Limited | Semiconductor device manufacturing method |
Also Published As
Publication number | Publication date |
---|---|
US7985700B2 (en) | 2011-07-26 |
KR100785727B1 (ko) | 2007-12-18 |
DE102006029335A1 (de) | 2007-10-04 |
TW200737348A (en) | 2007-10-01 |
CN101045820B (zh) | 2010-10-13 |
US20070232058A1 (en) | 2007-10-04 |
TWI311784B (en) | 2009-07-01 |
US7476970B2 (en) | 2009-01-13 |
CN101045820A (zh) | 2007-10-03 |
US20090163039A1 (en) | 2009-06-25 |
KR20070098401A (ko) | 2007-10-05 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP5380797B2 (ja) | 半導体デバイスの製造方法 | |
JP2007273494A (ja) | 絶縁膜形成用組成物及び半導体装置の製造方法 | |
JP4667165B2 (ja) | 半導体装置の製造方法 | |
JP2001185547A (ja) | 極限低誘電率膜のためのキャッピング層 | |
JP2002284998A (ja) | シリコン系組成物、低誘電率膜、半導体装置および低誘電率膜の製造方法 | |
US7830012B2 (en) | Material for forming exposure light-blocking film, multilayer interconnection structure and manufacturing method thereof, and semiconductor device | |
JP4756526B2 (ja) | 多孔質化低誘電率絶縁膜の形成方法及び該方法で形成された多孔質化低誘電率絶縁膜及び該多孔質化低誘電率絶縁膜を用いた半導体装置 | |
JP4408816B2 (ja) | 半導体装置の製造方法 | |
JP2000273176A (ja) | 絶縁膜形成方法及び半導体装置 | |
US8207059B2 (en) | Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device | |
KR101013483B1 (ko) | 반도체 장치의 제조 방법 | |
WO2009153857A1 (ja) | 半導体装置及びその製造方法 | |
JP2010034490A (ja) | 半導体装置の製造方法 | |
CN101960582A (zh) | 布线基板、半导体装置以及半导体装置的制造方法 | |
JP2003031566A (ja) | 低誘電率絶縁膜形成用組成物、これを用いる絶縁膜形成方法、及びそれにより得られた絶縁膜を有する電子部品 | |
JP4459096B2 (ja) | 半導体装置の製造方法 | |
JP2006351877A (ja) | 積層体の製造方法、半導体デバイスおよび半導体デバイスの製造方法 | |
JP5267460B2 (ja) | 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法 | |
JP2004186593A (ja) | 低誘電率絶縁膜及びその製造方法並びに半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20081205 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20100609 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110614 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20110811 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20110830 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20111017 |
|
A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20111108 |