JP5470687B2 - シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置 - Google Patents
シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置 Download PDFInfo
- Publication number
- JP5470687B2 JP5470687B2 JP2007209505A JP2007209505A JP5470687B2 JP 5470687 B2 JP5470687 B2 JP 5470687B2 JP 2007209505 A JP2007209505 A JP 2007209505A JP 2007209505 A JP2007209505 A JP 2007209505A JP 5470687 B2 JP5470687 B2 JP 5470687B2
- Authority
- JP
- Japan
- Prior art keywords
- group
- silicon compound
- insulating film
- ultraviolet
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
- C08G77/62—Nitrogen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/60—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/16—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which all the silicon atoms are connected by linkages other than oxygen atoms
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/022—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being a laminate, i.e. composed of sublayers, e.g. stacks of alternating high-k metal oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
- H01L21/02304—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment formation of intermediate layers, e.g. buffer layers, layers to improve adhesion, lattice match or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02345—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light
- H01L21/02348—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to radiation, e.g. visible light treatment by exposure to UV light
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02362—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment formation of intermediate layers, e.g. capping layers or diffusion barriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3125—Layers comprising organo-silicon compounds layers comprising silazane compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76832—Multiple layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
- H01L21/76834—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers formation of thin insulating films on the sidewalls or on top of conductors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
Description
しかし、配線間隔が1μm以下ではデバイス速度への影響が大きくなり、特に今後0.1μm以下の配線間隔で回路を形成すると、配線間の寄生容量がデバイス速度に大きく影響を及ぼすようになってくる。
なお、式(1)において、ε(誘電率)とCの関係を式(4)に示す。
(Sは電極面積、ε0は真空の誘電率、εrは絶縁膜の誘電率、dは配線間隔。)
したがって、配線遅延を小さくするためには、絶縁膜の低誘電率化が有効な手段となる。
(1)本発明における実施例を図1〜8を用いて説明する。
図9に示す発光スペクトルを有する高圧水銀ランプ(UVL−7000H4−N、ウシオ電機)を用いて紫外線硬化を行った。なお、紫外線の照度、スペクトル分布は分光放射照度計(USR−40D,ウシオ電機)にて測定した。
本発明に係る置換シリコン化合物に代えて表1に示す非置換シリコン化合物を使用した以外は実施例1〜6と同様にした。
石英基板上に本発明に係るシリコン化合物の膜あるいは比較用の膜を成膜し真空紫外分光器(SGV−157、島津製作所)にて180〜350nmの紫外線吸収スペクトルを測定することで、本発明に係るシリコン化合物の膜については、180〜210nmの間にある紫外線ピークについての前記シリコン化合物の紫外線吸収率1と、210〜350nmの間にある紫外線ピークについての前記シリコン化合物の紫外線吸収率2との比が、(紫外線吸収率1)/(紫外線吸収率2)≧2.5であることを確認した。結果は表2に示されている。同様にして210nm以下の紫外線の吸収率も測定した。
下記式1で示されるR1及びR2がHであるポリカルボシランのR1もしくはR2をハロゲン化し、ベンジル基を含むGrignard試薬と反応させることにより当該非置換ポリカルボシランに比して210nm以下の紫外線の吸収率が高いベンジル基を有するポリカルボしランを作製することができる。
基板上方に多孔質絶縁膜前駆体層を形成し、
付記1〜3のいずれかに記載の非置換シリコン化合物に比して210nm以下の紫外線の吸収率が高いシリコン化合物層を形成し、
当該シリコン化合物層を介して当該多孔質絶縁膜前駆体に紫外線を照射する
ことを含む、多層配線装置の製造方法。
付記1〜3のいずれかに記載の非置換シリコン化合物に比して210nm以下の紫外線の吸収率が高いシリコン化合物層を形成し、
当該シリコン化合物層を介して当該多孔質絶縁膜前駆体に紫外線を照射する
ことを含む、多層配線装置の製造方法。
14 素子領域 16 ゲート絶縁膜
18 ゲート電極 20 サイドウォール絶縁膜
22 ソース/ドレイン拡散層 24 トランジスタ
26 層間絶縁膜 28 ストッパ膜
30 コンタクトホール 32 密着層
34 導体プラグ 36 層間絶縁膜
38 多孔質層間絶縁膜 40 層間絶縁膜
42 フォトレジスト膜 44 開口部
46 溝 48 積層膜
50 Cu膜 52 層間絶縁膜
54 多孔質層間絶縁膜 56 層間絶縁膜
58 多孔質層間絶縁膜 60 層間絶縁膜
62 フォトレジスト膜 64 開口部
66 コンタクトホール 68 フォトレジスト膜
70 開口部 72 溝
74 積層膜 76a 配線
76b 導体プラグ
Claims (9)
- 非置換シリコン化合物に比して210nm以下の紫外線の吸収率が高い、当該非置換シリコン化合物を置換基で置換した、置換シリコン化合物を含んでなるフィルターにおいて、
下記式1で示されるポリカルボシランまたは下記式2で示されるポリシラザンまたはそれらの混合物からなるシリコン化合物のR1〜R3の少なくとも一部が他の基で置換された構造を有し、当該非置換シリコン化合物に比して210nm以下の紫外線の吸収率が高い、前記置換シリコン化合物
を含んでなるフィルター。
(式1において、R1、R2は、互いに同一もしくは異なっていてもよく、それぞれ、水素原子を表すか、もしくは置換もしくは非置換の、アルキル基、アルケニル基、シクロアルキル基またはアリール基を表し、nは10〜1000である。また、式2において、R1、R2およびR3は、互いに同一もしくは異なっていてもよく、それぞれ、水素原子を表すかもしくは置換もしくは非置換の、アルキル基、アルケニル基、シクロアルキル基またはアリール基を表し、但し、置換基R1、R2およびR3のうちの少なくとも1個は水素原子であり、そしてnは、当該シラザン型重合体が100〜50,000の数平均分子量を有するのに必要な繰り返し単位の数である。なお、式1と式2との記号は互いに独立している。) - 180〜210nmの間にある紫外線ピークについての前記置換シリコン化合物の紫外線吸収率1と、210〜350nmの間にある紫外線ピークについての前記置換シリコン化合物の紫外線吸収率2との比が、(紫外線吸収率1)/(紫外線吸収率2)≧2.5である、請求項1に記載のフィルター。
- 前記他の基が、ベンジル基、カルボニル基、カルボキシル基、アクロイル基、ジアゾ基、アジド基、シンナモイル基、アクリレート基、シンナミリデン基、シアノシンナミリデン基、フリルペンタジエン基、p−フェニレンジアクリレート基からなる群から選ばれたものである、請求項1または2に記載のフィルター。
- 多層配線装置の製造方法において、
基板上に多孔質絶縁膜前駆体の層を形成し、
請求項1〜3のいずれかに記載の置換シリコン化合物を含んでなるフィルターの層を形成し、
必要に応じて当該フィルターの層をプリキュアし、
次に、下記のいずれかの処理を行うことを含む、多層配線装置の製造方法。
(1)フィルターの層をプリキュアし、次いで、当該プリキュア層を介して当該多孔質絶縁膜前駆体に紫外線を照射する。
(2)フィルターの層をプリキュアせずに、当該フィルターの層を介して当該多孔質絶縁膜前駆体に紫外線を照射する。 - 前記多孔質絶縁膜前駆体が塗布型のシリカクラスター前駆体を用いて形成される、請求項4に記載の製造方法。
- 前記紫外線の光源が200〜800nmの範囲の波長を有する光源である、請求項4または5に記載の製造方法。
- 前記紫外線照射において、分光放射照度計を使用した場合における、ウエハ面における254nmの紫外線照度が1mW/cm2以上である、請求項4〜6のいずれかに記載の製造方法。
- 前記紫外線照射において、50〜470℃の間の温度で加熱しつつ紫外線を照射する、請求項4〜7のいずれか1項に記載の製造方法。
- 請求項4〜8のいずれか1項に記載の製造方法を用いて作製された多層配線装置。
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007209505A JP5470687B2 (ja) | 2007-08-10 | 2007-08-10 | シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置 |
EP08161631.0A EP2028215B1 (en) | 2007-08-10 | 2008-08-01 | Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device |
US12/185,367 US8207059B2 (en) | 2007-08-10 | 2008-08-04 | Silicon compound, ultraviolet absorbent, method for manufacturing multilayer wiring device and multilayer wiring device |
KR1020080076965A KR101053960B1 (ko) | 2007-08-10 | 2008-08-06 | 실리콘 화합물, 자외선 흡수체, 다층 배선 장치의 제조방법 및 다층 배선 장치 |
CN2008101297310A CN101649053B (zh) | 2007-08-10 | 2008-08-11 | 硅化合物、多层布线装置及其制造方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007209505A JP5470687B2 (ja) | 2007-08-10 | 2007-08-10 | シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2009044057A JP2009044057A (ja) | 2009-02-26 |
JP5470687B2 true JP5470687B2 (ja) | 2014-04-16 |
Family
ID=39870592
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2007209505A Active JP5470687B2 (ja) | 2007-08-10 | 2007-08-10 | シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置 |
Country Status (5)
Country | Link |
---|---|
US (1) | US8207059B2 (ja) |
EP (1) | EP2028215B1 (ja) |
JP (1) | JP5470687B2 (ja) |
KR (1) | KR101053960B1 (ja) |
CN (1) | CN101649053B (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101687049B1 (ko) * | 2009-07-17 | 2016-12-15 | 미쓰이 가가쿠 가부시키가이샤 | 적층체 및 그 제조 방법 |
CN102805857B (zh) * | 2012-08-27 | 2014-07-02 | 北京紫萌同达科技有限公司 | 一种复方氨基酸(15)双肽(2)注射液的制备方法 |
CN105045451B (zh) * | 2015-08-14 | 2019-03-26 | 昆山国显光电有限公司 | 触控显示面板及其制造方法 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4761458A (en) * | 1987-08-17 | 1988-08-02 | Dow Corning Corporation | Preceramic polycarbosilane derivatives |
US4824529A (en) * | 1987-11-27 | 1989-04-25 | Allied-Signal Inc. | Lipid membrane-based device |
DE3841348A1 (de) * | 1988-12-08 | 1990-06-13 | Kali Chemie Ag | Verfahren zur herstellung von polycarbosilanen und neue polycarbosilane |
DE3917838A1 (de) | 1989-06-01 | 1990-12-06 | Kali Chemie Ag | Halogenierte polycarbosilane und verfahren zu deren herstellung |
DE4214045A1 (de) * | 1992-04-29 | 1993-11-04 | Solvay Deutschland | Verfahren zur herstellung von am silicium selektiv mit wasserstoff substituierten polycarbosilanen |
DE4434495A1 (de) * | 1993-09-27 | 1995-03-30 | Shiseido Co Ltd | Verfahren und Vorrichtung zur Messung der Wirksamkeit von Ultraviolettschutz |
JPH11105186A (ja) * | 1997-09-30 | 1999-04-20 | Tonen Corp | 低誘電率シリカ質膜 |
US6225238B1 (en) * | 1999-06-07 | 2001-05-01 | Allied Signal Inc | Low dielectric constant polyorganosilicon coatings generated from polycarbosilanes |
US6824879B2 (en) * | 1999-06-10 | 2004-11-30 | Honeywell International Inc. | Spin-on-glass anti-reflective coatings for photolithography |
JP2001044474A (ja) * | 1999-08-04 | 2001-02-16 | Tdk Corp | 太陽電池モジュール |
JP2001093824A (ja) * | 1999-09-27 | 2001-04-06 | Shin Etsu Chem Co Ltd | レジスト下層用組成物及びパターン形成方法 |
JP2002170883A (ja) * | 2000-12-01 | 2002-06-14 | Nec Corp | 半導体装置における配線構造の製造方法 |
JP3886779B2 (ja) | 2001-11-02 | 2007-02-28 | 富士通株式会社 | 絶縁膜形成用材料及び絶縁膜の形成方法 |
JP3951124B2 (ja) | 2002-12-06 | 2007-08-01 | Jsr株式会社 | 絶縁膜 |
TW200505966A (en) * | 2003-04-02 | 2005-02-16 | Dow Global Technologies Inc | Organosilicate resin formulation for use in microelectronic devices |
US7785948B2 (en) * | 2004-08-20 | 2010-08-31 | National Institute Of Advanced Industrial Science And Technology | Semiconductor element and process for producing the same |
US7354852B2 (en) * | 2004-12-09 | 2008-04-08 | Asm Japan K.K. | Method of forming interconnection in semiconductor device |
CN1787186A (zh) * | 2004-12-09 | 2006-06-14 | 富士通株式会社 | 半导体器件制造方法 |
US20060128166A1 (en) | 2004-12-09 | 2006-06-15 | Fujitsu Limited | Semiconductor device fabrication method |
US20070093587A1 (en) * | 2005-10-25 | 2007-04-26 | Starfire Systems | Silicon carbide precursors and uses thereof |
JP5007511B2 (ja) | 2006-02-14 | 2012-08-22 | 富士通株式会社 | 露光光遮蔽膜形成用材料、多層配線及びその製造方法、並びに半導体装置 |
JP2007273494A (ja) * | 2006-03-30 | 2007-10-18 | Fujitsu Ltd | 絶縁膜形成用組成物及び半導体装置の製造方法 |
-
2007
- 2007-08-10 JP JP2007209505A patent/JP5470687B2/ja active Active
-
2008
- 2008-08-01 EP EP08161631.0A patent/EP2028215B1/en active Active
- 2008-08-04 US US12/185,367 patent/US8207059B2/en active Active
- 2008-08-06 KR KR1020080076965A patent/KR101053960B1/ko active IP Right Grant
- 2008-08-11 CN CN2008101297310A patent/CN101649053B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN101649053B (zh) | 2013-07-10 |
EP2028215B1 (en) | 2018-08-01 |
KR20090016400A (ko) | 2009-02-13 |
CN101649053A (zh) | 2010-02-17 |
US8207059B2 (en) | 2012-06-26 |
EP2028215A1 (en) | 2009-02-25 |
JP2009044057A (ja) | 2009-02-26 |
US20090038833A1 (en) | 2009-02-12 |
KR101053960B1 (ko) | 2011-08-04 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
KR100875692B1 (ko) | 절연막, 다층 배선 장치의 제조 방법 및 다층 배선 장치 | |
JP4667165B2 (ja) | 半導体装置の製造方法 | |
US20080122121A1 (en) | Semiconductor device having a interlayer insulation film with low dielectric constant and high mechanical strength | |
US20050161763A1 (en) | Porogen material | |
KR100785727B1 (ko) | 절연막 형성용 조성물 및 반도체 장치의 제조 방법 | |
JP5007511B2 (ja) | 露光光遮蔽膜形成用材料、多層配線及びその製造方法、並びに半導体装置 | |
JP5470687B2 (ja) | シリコン化合物、紫外線吸収体、多層配線装置の製造方法および多層配線装置 | |
JP2010278121A (ja) | 半導体装置およびその製造方法 | |
JP5218412B2 (ja) | ケイ素含有被膜の製造方法、ケイ素含有被膜および半導体装置 | |
JP4408816B2 (ja) | 半導体装置の製造方法 | |
JP2000273176A (ja) | 絶縁膜形成方法及び半導体装置 | |
KR101443999B1 (ko) | 반도체 장치의 제조 방법 | |
JP5304033B2 (ja) | 半導体装置の製造方法 | |
JP2003031566A (ja) | 低誘電率絶縁膜形成用組成物、これを用いる絶縁膜形成方法、及びそれにより得られた絶縁膜を有する電子部品 | |
JP2004186593A (ja) | 低誘電率絶縁膜及びその製造方法並びに半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20100416 |
|
A977 | Report on retrieval |
Free format text: JAPANESE INTERMEDIATE CODE: A971007 Effective date: 20110427 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20120703 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20120808 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20130402 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20130507 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20140107 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20140120 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 5470687 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 Free format text: JAPANESE INTERMEDIATE CODE: R150 |