TWI314936B - - Google Patents

Download PDF

Info

Publication number
TWI314936B
TWI314936B TW94115183A TW94115183A TWI314936B TW I314936 B TWI314936 B TW I314936B TW 94115183 A TW94115183 A TW 94115183A TW 94115183 A TW94115183 A TW 94115183A TW I314936 B TWI314936 B TW I314936B
Authority
TW
Taiwan
Prior art keywords
decane
forming
film
cerium oxide
group
Prior art date
Application number
TW94115183A
Other languages
English (en)
Chinese (zh)
Other versions
TW200604253A (en
Inventor
Akiyama Masahiro
Kurosawa Takahiko
Nakagawa Hisashi
Shiota Atsushi
Original Assignee
Jsr Corporatio
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corporatio filed Critical Jsr Corporatio
Publication of TW200604253A publication Critical patent/TW200604253A/zh
Application granted granted Critical
Publication of TWI314936B publication Critical patent/TWI314936B/zh

Links

Landscapes

  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
TW094115183A 2004-05-11 2005-05-11 Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film TW200604253A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004141200 2004-05-11

Publications (2)

Publication Number Publication Date
TW200604253A TW200604253A (en) 2006-02-01
TWI314936B true TWI314936B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2009-09-21

Family

ID=38019351

Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115183A TW200604253A (en) 2004-05-11 2005-05-11 Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film

Country Status (3)

Country Link
JP (1) JPWO2005108469A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (3) CN1950473B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW200604253A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009008041A1 (ja) * 2007-07-06 2009-01-15 Fujitsu Limited 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
EP2058844A1 (en) * 2007-10-30 2009-05-13 Interuniversitair Microelektronica Centrum (IMEC) Method of forming a semiconductor device
JP5583551B2 (ja) * 2009-11-04 2014-09-03 三星電子株式会社 有機シリケ−ト化合物を含む組成物およびフィルム
WO2017007010A1 (ja) * 2015-07-09 2017-01-12 東京応化工業株式会社 ケイ素含有樹脂組成物
JP6641217B2 (ja) * 2016-03-30 2020-02-05 東京応化工業株式会社 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法
CN106110906B (zh) * 2016-07-15 2018-10-19 常州大学 一种亲水性有机硅膜的制备方法
JP6999408B2 (ja) 2016-12-28 2022-02-04 東京応化工業株式会社 樹脂組成物、樹脂組成物の製造方法、膜形成方法及び硬化物
CN108917582A (zh) * 2018-03-30 2018-11-30 华东理工大学 应变传感器及其制造方法
US11760842B2 (en) * 2019-04-08 2023-09-19 Merck Patent Gmbh Composition comprising block copolymer, and method for producing siliceous film using the same
US11421157B2 (en) 2019-08-21 2022-08-23 Entegris, Inc. Formulations for high selective silicon nitride etch
CN112563661B (zh) * 2020-12-07 2022-05-27 界首市天鸿新材料股份有限公司 环保型纤维素基隔膜的制备方法及其在锂电池中的应用

Also Published As

Publication number Publication date
TW200604253A (en) 2006-02-01
CN1950473B (zh) 2010-10-27
CN1957020B (zh) 2011-06-08
CN1954017A (zh) 2007-04-25
CN1950473A (zh) 2007-04-18
JPWO2005108469A1 (ja) 2008-03-21
CN1957020A (zh) 2007-05-02

Similar Documents

Publication Publication Date Title
TWI356830B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TWI304077B (en) Method of forming organic silica-based film
JP4374567B2 (ja) 多孔性低誘電率材料のための紫外線硬化処理
TWI431040B (zh) Organic silicon dioxide film and method for forming the same, composition for forming insulating film of semiconductor device and manufacturing method thereof, and wiring structure
TWI286155B (en) Composition for film formation, method of film formation, and silica-based film
TWI261543B (en) Low dielectric materials and methods for making same
TWI292349B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP5172567B2 (ja) 膜形成用組成物、絶縁膜、半導体装置およびその製造方法
EP2584593B1 (en) Formation method for silicon oxynitride film
TW200413559A (en) Non-thermal process for forming porous low dielectric constant films
CN1695235A (zh) 多孔低介电常数材料的等离子固化方法
WO2007072750A1 (ja) 低誘電率非晶質シリカ系被膜形成用塗布液および該塗布液から得られる低誘電率非晶質シリカ系被膜
KR101736888B1 (ko) 실리콘 옥시나이트라이드 막의 형성 방법 및 이 방법에 의해 제조된 실리콘 옥시나이트라이드 막을 가지는 기판
US6399210B1 (en) Alkoxyhydridosiloxane resins
TWI314936B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN1260273C (zh) 蚀刻终止树脂
EP3755738A1 (en) Perhydropolysilazane compositions and methods for forming nitride films using same
TW200529252A (en) Insulating film, method for forming same and composition for forming film
US20040195660A1 (en) Composition for forming porous film, porous film and method for forming the same, interlayer insulator film, and semiconductor device
WO2005108469A1 (ja) 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
TWI326701B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN113227215B (zh) 包含嵌段共聚物的用于形成硅质膜的组合物以及使用该组合物制造硅质膜的方法
EP3887431B1 (en) Method for producing amorphous silicon sacrifice film and amorphous silicon forming composition
TWI328600B (en) Composition for forming porous film, porous film and method for forming the same, interlevel insulator film and semiconductor device
TWI225086B (en) Composition for film formation, method of film formation, and silica-based film

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees