TW200604253A - Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film - Google Patents

Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film

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Publication number
TW200604253A
TW200604253A TW094115183A TW94115183A TW200604253A TW 200604253 A TW200604253 A TW 200604253A TW 094115183 A TW094115183 A TW 094115183A TW 94115183 A TW94115183 A TW 94115183A TW 200604253 A TW200604253 A TW 200604253A
Authority
TW
Taiwan
Prior art keywords
film
organic silica
forming
based film
semiconductor device
Prior art date
Application number
TW094115183A
Other languages
English (en)
Chinese (zh)
Other versions
TWI314936B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Masahiro Akiyama
Takahiko Kurosawa
Hisashi Nakagawa
Atsushi Shiota
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200604253A publication Critical patent/TW200604253A/zh
Application granted granted Critical
Publication of TWI314936B publication Critical patent/TWI314936B/zh

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Landscapes

  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Silicon Polymers (AREA)
TW094115183A 2004-05-11 2005-05-11 Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film TW200604253A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004141200 2004-05-11

Publications (2)

Publication Number Publication Date
TW200604253A true TW200604253A (en) 2006-02-01
TWI314936B TWI314936B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2009-09-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW094115183A TW200604253A (en) 2004-05-11 2005-05-11 Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film

Country Status (3)

Country Link
JP (1) JPWO2005108469A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CN (3) CN1950473B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (1) TW200604253A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI482218B (zh) * 2007-10-30 2015-04-21 Taiwan Semiconductor Mfg Co Ltd 高介電常數閘極介電材料的形成方法與半導體元件

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2009008041A1 (ja) * 2007-07-06 2009-01-15 Fujitsu Limited 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法
JP5583551B2 (ja) * 2009-11-04 2014-09-03 三星電子株式会社 有機シリケ−ト化合物を含む組成物およびフィルム
WO2017007010A1 (ja) * 2015-07-09 2017-01-12 東京応化工業株式会社 ケイ素含有樹脂組成物
JP6641217B2 (ja) * 2016-03-30 2020-02-05 東京応化工業株式会社 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法
CN106110906B (zh) * 2016-07-15 2018-10-19 常州大学 一种亲水性有机硅膜的制备方法
JP6999408B2 (ja) 2016-12-28 2022-02-04 東京応化工業株式会社 樹脂組成物、樹脂組成物の製造方法、膜形成方法及び硬化物
CN108917582A (zh) * 2018-03-30 2018-11-30 华东理工大学 应变传感器及其制造方法
US11760842B2 (en) * 2019-04-08 2023-09-19 Merck Patent Gmbh Composition comprising block copolymer, and method for producing siliceous film using the same
US11421157B2 (en) 2019-08-21 2022-08-23 Entegris, Inc. Formulations for high selective silicon nitride etch
CN112563661B (zh) * 2020-12-07 2022-05-27 界首市天鸿新材料股份有限公司 环保型纤维素基隔膜的制备方法及其在锂电池中的应用

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI482218B (zh) * 2007-10-30 2015-04-21 Taiwan Semiconductor Mfg Co Ltd 高介電常數閘極介電材料的形成方法與半導體元件
US9799523B2 (en) 2007-10-30 2017-10-24 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming a semiconductor device by thermally treating a cleaned surface of a semiconductor substrate in a non-oxidizing ambient

Also Published As

Publication number Publication date
TWI314936B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2009-09-21
CN1950473B (zh) 2010-10-27
CN1957020B (zh) 2011-06-08
CN1954017A (zh) 2007-04-25
CN1950473A (zh) 2007-04-18
JPWO2005108469A1 (ja) 2008-03-21
CN1957020A (zh) 2007-05-02

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