TW200949941A - Method for curing a porous low dielectric constant dielectric film - Google Patents

Abstract

A method of curing a low dielectric constant (low-k) dielectric film on a substrate is described, wherein the dielectric constant of the low-k dielectric film is less than a value of approximately 4. The method comprises exposing the low-k dielectric film to infrared (IR) radiation and ultraviolet (UV) radiation.

Description

200949941 VI. Description of the invention: . [Reciprocal Reference of Related Applications] ' [0001] This application is related to the US Patent Application No.

* 11/269581, entitled "MULTI_STEP SYSTEM AND METHOD FOR CURING A DIELECTRIC FILM", the application period is November 9th, 2005; and US Patent Application No. 11/517358, entitled "THERMAL PROCESSING SYSTEM FOR CURING" DIELECTRIC FILMS, the application deadline is September 8, 2006. Further, the present application is related to: US Patent Application Serial No. 12/043,814, entitled "METHOD FOR REMOVING A PORE-GENERATION MATERIAL FROM AN © UNCURED LOW-K DIELECTRIC FILM" (TDC- 007), the application period is the same period; the US Patent Application No. 2/〇43835, entitled "POROUS SiCOH-CONTAINING DIELECTRIC! FILM AND AMETHOD OF PREPARING" (TDC-008) , the date of application is the same period of time; and the title of US Patent Application No. 12/〇4385, in the co-application, title

The date of application for "METHOD FOR TREATING DIELECTRIC FILM WITH INFRARED RADIATI〇N" (TDC-009)' is the same date. The entire content of these applications is hereby incorporated by reference. [Technical Field to Which the Invention Is Applicable] _2 _2] The present invention is side-turned to process a dielectric Lang method, and more specifically 1 = about a method of using electromagnetic (EM) radiation to process a low dielectric constant (low-voltage film [Prior Art] In particular, the low-k film is being used between the semi-conducting (four)-set metal wires; = 3 200949941 [The squeaky (four) and more traditional human porosity make the mechanical strength more subtle and & 者 〇 〇 〇 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索 探索In the film, cross-linking is caused to treat the use case π human % Λ from the polymerization of the base to the main way of forming cross-linking 'improved, for example, the Young's coefficient (γ 〇 简 简 简 简 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四 四Such mechanical properties, thereby improving the low-k film manufacturing process, the ultra-low dielectric constant of the dielectric film, the ji·table film / the post-product processing (hardening) purposes are different, including, for example, to cover & ί dissolve = burns pore formers for forming pores on porous dielectric films, improves the mechanical properties of the film In the case of λ j^ film, it is customary to thermally harden a low dielectric constant (low-k) material in the range of up to 4 ° C. For example, the furnace hardening method is sufficient to make a strong, hunting A low-k film with a dielectric constant greater than about 2.5. If the combination is too large (such as ultra-low cut), the degree of heat can not be enough to make an interconnect with appropriate strength. The structure [〇〇I8i, in the case of the thermostable class] can be transferred to the appropriate amount. In the case of the temperature range studied, only free radicals can be generated. Since the thermal energy is lost to the shank of the substrate and the heat loss of the surrounding ring 4 200949941, only a small amount can be absorbed in the low to be hardened. • The two-type furnace hardening method requires high temperature and long hardening time. However, the low heat-hardening t lacks the formation of the initiator, as well as the degree of initial deposition. The large number of methyl groups stop the reaction', making it difficult to achieve the desired intersection. [Inventive content] (EM) light shot to deal with low dielectric constants' to illustrate a low dielectric constant (low-k) on a substrate where low _k The dielectric constant of the dielectric film is less than about 4, the light shot is low-k exposed to the infrared (four) radiation and the material line (UV) dielectric film is exposed to the flute 3. The low-k dielectric is formed on the substrate. Electro-film; low-k will be light-guided (ir) light; after exposure to the first ir radiation, after ❹, will be lighter outside the fuv); and in the exposure to UV light Often ====: lion, her time is good for the first shot to maintain the second duration, where the second duration lasts after the start and the second duration _ begins at the first two. °—Time' a ends at the end of the first-duration period [dielectric helium, ·:: low dielectric constant (low-k) on the substrate) 匕3 forms a low-k dielectric film on the substrate , the low _k 5 200949941 dielectric film comprises a structure forming material and a hole generating material; the low-k dielectric film substantially removes the hole to form a material to form a porous low-k dielectric film; after the removing step , _ = = hole f is low k; | cross-linking initiator is produced in the electric film; and after the initiation of cross-linking, the parent-linked porous low-k dielectric film. [Embodiment] [rfLb ί In the following description, in order to facilitate a thorough understanding of the present invention and to say that the nature of the invention is not limited thereto, the specific details of the specific structure, the description, and the like of the processing secret will be proposed. . However, it should be understood that the present invention is implemented in other embodiments than those specific details. ❹ = 4] The inventor perceives that the generation hardening method is directed to some of the heat hardening itself. For example, the 'generation hardening method is more efficient in terms of energy transfer when compared with the thermosetting process, and high energy particles (such as higher energy levels found in the form of accelerated electrons, ions, or neutral particles 7). Can (4) motivate the lower 2 2 which effectively cuts off the chemical bonding ^ dissociation of the side groups. These alternative 2 initiators (free radicals) can improve the transfer in the actual cross-linking can be increased under the reduced thermal budget The degree of cross-linking. [=25] In addition, the inventors have learned that #膜强度为似似

An alternative hardening process can improve the mechanical properties of the film. For example, dectron beam (EB), ultraviolet radiation, infrared (10) radiation (=__, rain) radiation can be used to harden the low-k film and UL without sacrificing dielectric properties and thin hydrophobicity. . Fiber strength is similar [0026] However, despite the benefits of EB, UV, IR and MW hardening and right Bean too | & For example, the height of ΕΒ* υν is high to produce excessive cross-linking initiator (free radical) for cross-linking. The mechanical properties are greatly improved under the heating of the supplementary substrate. On the other hand, and ^ can cause chemically indiscriminate dissociation, which may unfavorably reduce the film properties = electrical properties, such as loss of hydrophobicity, increase of lame film stress, 1 hole, poor performance, film formation and increase Dielectric constant. In addition, the low energy hardening source hardens) can provide a significant improvement in heat transfer efficiency primarily, but at the same time (with a side effect 6 200949941, such as arc discharge or transistor damage (MW). [0027] According to an embodiment A method of hardening a low dielectric constant (low seven) dielectric film on a substrate, wherein the low-k dielectric film has a dielectric constant less than about 4. The method includes exposing the lower seven film to ultraviolet light (UV) Radiation and infrared (ir) radiation of non-ionized electromagnetic (EM) radiation. UV exposure may comprise a plurality of uv exposures, wherein each UV exposure may or may not contain different intensities, powers, power densities, or wavelength ranges, or Any combination of two or more. IR exposure may comprise a plurality of IR exposures, wherein each IR exposure may or may not contain different intensities, powers, power densities, or wavelength ranges, or any two or more thereof [0028] During the uv exposure, the lower dielectric film can be heated by raising the temperature of the substrate to about 2 Torr to a temperature of about 600 C. The thermal temperature is About 3〇〇t: to about 5〇 (rc's van Or, the uv heat temperature is in the range of about 35 〇!c' to about 45 (TC. It can be performed by conduction heating, convection heating, or light-fire heating, or a combination of two or more thereof. Heating of the substrate. [0029] During the 1R exposure, the lower dielectric film can be heated by raising the temperature of the substrate to about 2 Torr to 〇〇2 〇〇c. Or, ir heat temperature is two to about 5 (K^ of the inside of the turn. Or 'melon temperature is about 350.. to ❹ two - it can be transferred by conduction heating, convection heating, or radiant heating, or one or The heat energy of the substrate is heated by a combination of more. Heart: J Gan's can be heated by heat in combination with "pre-exposure, ^", exposure, or after UV exposure, or a combination of more. In the case of IR exposure (four) exposure, or combination of both, III > 'uv ^ ^ ^ uv can be IR exposed in the combination of IR, - or even more. In addition, the combination of many,嶋, _ or both of them to about (four) or both, can be heated by raising the temperature of the substrate or the preheating temperature within the range The low-k-pre-heat treatment has a range of about 3 〇〇t: to about 5 〇〇<t, and is higher than 7 200949941 = ground' pre-heat treatment temperature is about 35 (rc to about 4) Within the range of construction, field exposure, or IR exposure, or both, the post-heat treatment temperature of the substrate can be increased by about 3 〇〇t > C to about 5 〇〇〇 C by raising the substrate. Or, the processing temperature is from about % to about. (10) Fan. Test H. According to another embodiment, the dielectric film on the substrate is processed. The substrate at the second side may be a semiconductor, a metal conductor, or any dielectric film. Place 4=1 substrate. The dielectric film may have a dielectric constant less than _ (approximately the number of turns (dry soldering and ί electrical constant may be in the range of 3. 8 to 3.9) dielectric constant and / or hardening, or drying and hardening After, or both. In the invention, the dielectric film may have a dielectric constant of less than 3 G (dry and/or hardened and/or hardened, or both), less than 2.5. The dielectric constant, less than 2.2, or the dielectric constant less than 1.7. [=035] The dielectric film can be described as a low dielectric constant (low_k) film or an ultra-low film. It can contain 3 organic, inorganic, and organic _ inorganic mixed materials. The external dielectric film can be porous or non-porous. Magic film can include, for example, structural formation materials and void-forming materials. Or a two-phase porous barrier film. The structure-forming material may comprise atoms, molecules, or molecular fragments formed by the structure. The pore-forming material may comprise atoms separated by pores to form a parent core (eg, a pore former), Molecular, or molecular fragmentation. Single- or double-porous membranes may have a reduced pore-forming material prior to removal of the pore-forming material. Then, the dielectric constant is still used. [〇〇37] For example, forming a single-phase porous low-pressure film may include: depositing a side layer of a pore-forming molecule having a weak bond to a structure-forming molecule on the surface of the substrate... Further, for example, forming a two-phase porous low-k film may include copolymerizing a structure forming molecule and a pore-forming molecule on the surface of the substrate. [F〇38] In addition, the dielectric film may contain a dielectric constant Moisture, water, solvent and/or other contaminants after drying and/or hardening before drying and/or hardening. [0039] Commercial Clean, such as from Tokyo Electron Limited 'TEL, can be used. Track ACT 8 s〇D and ACT 12 s〇D plating 8 200949941 Chemical vapor deposition (CVD) in membrane systems • Technology, or spin-on dielectric (SOD) Technology to form a dielectric film.

The Clean Track ACT 8 (200mm) and ACT 12 (300mm) coating systems provide S0D - coating, baking, and hardening tools for materials. The Track system can be configured to handle substrates of 100mm, 200mm, 30mm, and larger sizes. Other systems and methods known to those skilled in the art of spin-on dielectric and CVD dielectrics for forming dielectric films on substrates are suitable for use in the present invention. [0040] For example, the dielectric film may comprise an inorganic phthalate-based material deposited using CVD techniques, such as oxidized organodecane (or organic decane). Examples of such films include commercial Back DiamondTM CVD organic strontium silicate glass (org silicate glass) films from Applied Materials, Inc., or commercial CoralTM CVD films from Novellus Systems. Furthermore, for example, the porous dielectric film may comprise a single phase material, such as a cerium oxide based substrate having terminal organic side groups that inhibit cross-linking during the hardening process to create small voids (or voids). Further, for example, the porous dielectric film may comprise a dual phase material such as a oxidized cerium substrate having an inclusion of an organic material (e.g., a pore former) which is decomposed and evaporated during the hardening process. In addition, the dielectric film may comprise an inorganic silicate-based material deposited using SOD technology such as hydrogen silsequioxane (HSQ) or methyl sesquisulfate (methyl silsequioxane). 'MSQ). An example of this film contains

Dow Coming's commercial f〇x HSQ, commercial XLK multi-hole HSQ from Dow Coming, and commercial JSRLKD-5109 from jsrMicroelectronics. [0043] Furthermore, dielectric films may comprise organic materials deposited using SOD technology. An example of this film contains commercial FOx HSQ from Dow Coming, from

Commercial use of Dow Chemical SiLK-I, SiLK-J, SiLK-H, SiLK-D, porosity

SiLK-T, porous SiLK-Y and porous SiLK-Z semiconductor dielectric resins; and commercial FLARE:TM, and Nanoglass® from Honeywell. - [0044] The method comprises a flow chart 5 of 510 beginning with the step of optionally drying the dielectric film on the substrate in the first processing system. The first processing system can include a drying system configured to remove or partially remove one or more contaminants in the dielectric film, 9 200949941 = the object contains gas, water, solvent, material, holes Generating molecules and pores are generated. The residual f-holes form fragments of the knife that hinder the subsequent hardening process, or any other possibility, 520*, exposing the dielectric film to the uv. UV exposure can include a hardening system in the system: "," is mechanically separated by 4% or part of the dielectric film. After the drying process, it can be transferred to the second system. Processing the system to expose the contamination to uv radiation can include exposing the dielectric film to lfSf: one, one or more UV emit diodes (light emitters diodes, , or - or more UV lasers, Or a combination of two or more of the uv light I may have a wavelength of about 100 nanometers (meters, nm) to about 600 nm _ ^. Alternatively, the wavelength of the UV radiation may range from about 200 nm to about 400 nm. The wavelength of the UV radiation may range from about 150 nm to about 3 〇〇 nm. Or the wavelength of the ^uv radiation may range from about 170 nm to about 24 〇 nm. Alternatively, the wavelength of the UV radiation may be In the range of about 2 〇〇 nm to about 24 〇 nm. [0047] During exposure of the dielectric film to UV radiation, the temperature of the substrate can be raised to a range of about 200 C to about 600 ° C. The dielectric film is heated by the UV heat temperature. Alternatively, the uv heat temperature may be in the range of about 30 (rc to about 500.) or uv heat temperature. Can be in the range of about 35 (TC to about 45 (TC). Or, before exposing the dielectric film to υ gamma radiation or after exposing the dielectric film to uv radiation or both, 'by raising the substrate Heating the dielectric film at a temperature. Heating of the substrate may include conduction heating, convection heating, or radiant heating, or a combination of any two or more thereof. [0048] Optionally, exposing the dielectric film to UV radiation The dielectric film can be exposed to IR radiation during exposure. Exposing the dielectric film to IR radiation can include exposing the dielectric film to one or more IR lamps, one or more IR LEDs (light emitting diodes) IR radiation of LEDs), or one or more IR lasers, or a combination of two or more thereof. The wavelength of IR radiation may range from about 1 micron to about 25 microns. Or 'IR The wavelength of the radiation may be in the range of about 2 〇〇 nm to about 400 nm 200949941. Alternatively, the wavelength of the IR radiation may range from about 2 microns to about 2 〇 microns. Alternatively, the wavelength of the 1R radiation may be about 8 From micron to about 14 microns. Alternatively, the wavelength of IR radiation can range from about 8 microns to about 1 In the range of 2 microns, alternatively, the wavelength of the IR radiation can range from about 9 microns to about 1 〇. [0049] In 530, the dielectric film is exposed to IR radiation. The dielectric film is exposed to IR. Radiation can include exposing the dielectric film to one or more lights, one or more IR light emitting diodes (LEDs), or one or more IR lasers, or both or more The combination of IR radiation. The wavelength of the IR radiation can range from about i microns (micron) to about 25 microns. Alternatively, the wavelength of the IR radiation can be in the range of about 2 〇〇 nm ^ about 40 〇 nm. Alternatively, the wavelength of the IR radiation can range from about 2 microns to about 2 Torr. Alternatively, the wavelength of the IR radiation can range from about 8 microns to about 14 microns. Alternatively, the wavelength of the IR radiation can range from about 8 microns to about 12 microns. The wavelength of the IR radiation can range from about 9 microns to about 1 inch. IR exposure can be carried out prior to UV exposure, during UV exposure, or after UV exposure, or a combination of two or more. [0050] Further, during the exposure of the dielectric film to the IR radiation, the film may be applied by raising the temperature of the substrate to an ir thermal temperature in the range of about 20 CTC to about 60 (TC). The IR heat temperature may be in the range of about 300 〇 to about 5 〇 (rc). Alternatively, the IR heat temperature may be in the range of about 350. (: to about 450 ° C. Alternatively, in the dielectric film Exposure, prior to IR radiation or after exposing the dielectric film to IR radiation or both, the dielectric film can be heated by raising the temperature of the substrate. Heating of the substrate can include conduction heating, convection heating, or radiant heating, Or any combination of two or more. [〇〇51] As described above, during the 1 foot exposure, by absorption of IR energy; J thermal dielectric film. However, the heating step may further comprise The substrate is placed on the substrate holder and the substrate holder is heated using a heating device to electrically heat the substrate. For example, the heating device may comprise a resistive heating element. [0052] The inventors have observed that different stages of the curing process can be performed Change the energy level (hv) of the pass-through period. The hardening process can be used Mechanisms for removing moisture and/or contaminants, removing _^ hole-forming materials, decomposing pore-forming materials, producing cross-linking initiators, cross-linking of dielectric films, and diffusing cross-linking initiators. Organizations may need to be different Passing 200949941 energy to the energy level and rate of the dielectric film. • ff] For example, in removing the hole-forming material _, to absorb photons at the R wavelength, the inventors have found that ^ ^ ' UV exposure is more effective To assist in the removal of the hole-forming material. (4) Heating than paper or [0054] In addition, for example, during the removal of the hole-forming material, the decomposition of the hole-generating material is assisted. The removal process may include IR exposure by j. The inventor has issued Money exposure can be achieved by dissociating pores, such as pore-forming molecules and/or pore-forming molecular fragments, and coffin (eg ❹ = ' to facilitate the removal process with IR exposure. ^^^^ at W wavelength (eg Photon to about 45Gnm) to receive counties, for example, during the period of production of cross-linking initiator, the initial can be used to use the Chu Qing New Materials _ hair _ away ^ ^ away from the cloud and right, recognize the exposure Promote. For example, 'key solution H # about lion to 4GGnm The energy level of the wavelength. In the case of the h step, for example during the cross-linking, the cross-linking process can be facilitated by the thermal energy of the foot. The inventors have found that cross-linking can be facilitated by 1R exposure. For example, 'forming and recombining bonds may need to have The low main wavelength of the salt is, for example, corresponding to the drying process of the diarrhea-based organic phosphatic acid film, the IR exposure of the dielectric film, and the processing system of the dielectric film, or separate processing systems. Zhongjin [The drying process can be carried out in the first processing system and the IR exposure and the exposure of the second exposure, such as the 1R exposure of the dielectric film, can be carried out in the vacuum state to transfer the substrate from the second processing system to the younger brother. A processing system minimizes contamination. & In addition, after the unnecessary drying process, the exposure process, and the 1r exposure cap are changed, the post-treatment of the dielectric film is forced to be processed. For example, post-treatment can include heat treatment of the dielectric film. Alternatively, for example, the post-treatment may include a whirl cold on the dielectric film, or a film, which may increase the thickness of the film or the vapor deposition. 3 by two, tearing the dielectric film In the latter part, the process of processing the substrate can be performed on the substrate by the process of "execution" or "more on the dielectric film [00^, or the dielectric film is exposed to the plasma process. Dielectric film: ΖΖΤ-ί^ [=〇] At 62", the dielectric 臈 is exposed to the first IR radiation. Lift = electricity = dew to the first - IR ^ shot can be promoted by the dielectric film to remove all, electric ϊ ^ ϊ, or version of any: (four) ί 联 3 3 paragraphs long enough to be substantially removed by the dielectric film ί ii ii raw ^: pore-forming material, residual pore-forming material, pore-forming material containing pores and/or fragments of pore-forming molecules, crosslinking inhibitors, or remnant inhibitors, or both A combination of more people. [m exposing the dielectric film to the first ir light shot may include exposing the dielectric film to multiple radiation, monochromatic IR radiation, pulsed IR radiation, or continuous wave IR radiation, or two or more of any two or more combination. For example, exposing the dielectric film to the first-IR radiation may include exposing the dielectric film to one or more IR lamps, one or more IR light-emitting diodes, or A combination of multiple melon lasers. The first-IR radiation may contain a power density of up to about 2 cm 2 . For example, the first IR radiation may contain power in the range of about 1 w/cm 2 to about 2 〇 w/cm 2 . Density. The wavelength of the first IR radiation may range from about ! microns to about 25 microns. Alternatively, the wavelength of an IR radiation may range from about 2 microns to about 2 microns. Alternatively, the first IR radiation The wavelength may range from about 8 microns to about 14 microns. Or 13 200949941, the wavelength of the first IR radiation may range from about 8 microns to about 丨 2 microns. Alternatively, the wavelength of the first IR radiation may be about In the range of 9 microns to about 10 microns. The first melon power density, or the first melon wavelength, 戋 is changed during the first IR exposure. [0062] Optionally, during the first IR exposure, Increasing the temperature of the substrate to a first ir heat treatment temperature in the range of about 200 c to about 600 C to coat the dielectric film Alternatively, the first IR heat treatment temperature may be in the range of about 3 Torr (rc to about rms). Alternatively, the first IR heat treatment temperature may be in the range of about 35 (rc to about 45 (rc). Ο [0063 The dielectric film is exposed to uv radiation after the first IR exposure at 630. For example, exposing the substrate to UV radiation can promote the formation of a crosslinking initiator (or free radical) in the dielectric film. Exposing the dielectric film to UV radiation can include exposing the dielectric film to polychromatic uv radiation, monochromatic uv radiation, pulse uv radiation, or continuous wave uv radiation, or a combination of two or more. For example, Exposing the dielectric film to uv radiation can comprise exposing the dielectric film to one or more UV lamps, one or more uv light emitting diodes (LEDs), or one or more uv lasers, or The combined uv radiation. The uv radiation may contain a power density in the range of from about 0.1 mil W/cm 2 to about 2000 mW/cm 2 . The wavelength of the UV radiation may range from about 6 〇〇 nm to about . The wavelength may range from about 200 nm to about 400 nm. Or the wavelength of the 'UV light shot may range from about 15 nm to about 300 nm. Or, UV light shot. The wavelength may range from about I70 nm to about 240 nm. Alternatively, the UV wavelength may range from about 200 nm to about 240 nm. [0065] Optionally, during UV exposure, the temperature of the substrate may be raised. Heating the dielectric film to a UV heat treatment temperature in the range of about 200 ° C to about 600 ° C. Or 'the UV heat treatment temperature may be in the range of about 300 ° C to about 500 ° C. Or the 'UV heat treatment temperature. It can be located in the range of about 35 (TC to about 45 (TC). [0066] The dielectric film is exposed to a second IR radiation at 640. For example, exposing the dielectric film to the second IR radiation can promote crosslinking of the dielectric film. Exposing the dielectric film to the second IR radiation may comprise exposing the dielectric film to at most 200949941 color IR radiation, monochromatic IR light radiation, navigation, a combination of any two or more of which, for example, The shot r or f may comprise a power density in the range of exposure to _ or more han lamps, or r-IR-IR IW/cm to about 20 w/cm 2 , at about 1 μm to about Within the range of 25 microns. g field wavelength or wave of second IR radiation or wave of second IR radiation or wave of second IR radiation may be varied from about 2 microns to about 20 microns during the first IR exposure. The wavelength of the first 1 foot shot may range from about 8 microns to about 14 microns long and may range from about 8 microns to about 12 microns. The length may range from about 9 microns to about 10 microns. 1隹; change the second melon power density, or the second IR wavelength, or both „ Γί^2ηηΐ must be 'during the second 1R exposure' can be raised by raising the temperature of the substrate ί 热 hot> In the range of about 30 (rc to about 500 ° C.) or, the second IR heat treatment temperature can be in the range of about 35 (rc to about the range of the range of [0070] ΓΖ exposure" in the first -IR exposure For at least part of the period, the UV radiation can be applied. For example, the dielectric film is exposed to the second UV radiation if the bond in the dielectric film is broken or dissociated to help remove the various materials λα · αΓ described above. The V radiation may have a density in the range of from about 0.1 lm/cm 2 to about 2000 mW/cm 2 . The wavelength of the first UV light ray may be from about 1 (10) 11111 to about 60 〇 ί = 2. Alternatively, the second UV light shot The wavelength may be from about 2 〇〇 nm to about 40 〇 nm. Alternatively, the wavelength of the second UV light may be from about 150 nm to about 3 〇〇 nm or the wavelength of the first UV shot may be about i70 nm. Up to about 240 nm or 'the wavelength of the second UV radiation may be optionally between about 2 〇〇 nm and about 240 nm' during at least a portion of the UV exposure, the dielectric may be Up to the third IR radiation. The third IR radiation may contain up to about 20 w/cm 2 of power. For example, the third IR radiation may contain a range of from about 1 W/cm 2 to about 2 〇 w/cm 2 of the range of 15 200949941. Within the range of ί _, the wavelength may be in the range of about 1 micrometer to about 25 micrometers or the wavelength of the second IR radiation may be in the range of about 2 micrometers to about 20 micrometers, or the wavelength of the third IR radiation may be From about 8 microns to about 14 micrometers, the wavelength of the third IR radiation can range from about 8 microns to about 12 micrometers or the wavelength of the third IR radiation can range from about 9 microns to about 1 microsecond. Change the third IR power dense sound, seven potential-IR wavelength, or both during exposure.

[0071] Before exposure or first IR exposure or both, C = can be added from the preheat treatment temperature in the range of from about 20 °C to about _ °C. Alternatively, the preheat treatment temperature can be in the range of about 30 (TC to about 50 (TC): again, or the preheat treatment temperature can be in the range of about 35 (TC to about 450 ° C. [0072] In UV exposure Or after the second ir exposure or both, the temperature of the ancient plate may be in the range of about 200 Ϊ to about _ ° C: Ai =. The heat of the post-heating may be about (10). The temperature may be about or after the heat treatment. A method of hardening a low dielectric constant (lower seven) film on a substrate is described in the range of about 35 (Tc to about 450. (in the range of m.). The method comprises forming a low dielectric film on the substrate, Wherein the low material and the hole generating material maintain the first-last exposure light exposure. In the first duration, the second duration is maintained; the radiation, wherein the second duration is the first duration of the flute 1 (10) The first-time job starts at the second time point before the start of the first duration - Γ 00741 ^ ' and terminates before the end of the - duration. 3. According to another embodiment, the low-intermediate diagram on the hardened substrate is illustrated. 700' of which low-k dielectric film contains structure forming material material (four) at 720 1 'by low _ The k dielectric film substantially removes the pore formation; the joint ===agent = moisture, moisture, impurities, = material - 丄ϊίίίί, material containing pores, and/or pore-forming materials Any combination of two or more. 200949941 After removing the pore-forming material, the material is formed in the low-k dielectric low-k dielectric film.

In addition, the method may optionally include cutting the bond in the low-electrode film, and forming a weak bond side group, a hole in the structure forming material, and a pore-forming molecule. Fragments, or two or more of them, such as a parent-linked inhibitor, may comprise a pore-forming material, wherein the gentleman-structured dielectric film comprises a surface conformation of the substrate having a slight The shiatsu dielectric film is exposed to IR radiation. Exposing a low-k dielectric = shot ', _ shot, or continuous (10) radiation, or a ^ 2 to ΐ dielectric film to IR radiation may include a low-k dielectric film ί rXim, having a lion to Ir radiation of a wavelength of about 12 microns. Dielectric film exposure Tifv can expose the low-voltage dielectric film to uv radiation. The low seven-shot, single-multiple radiation may include exposing the low-pressure dielectric film to a multi-color uv spoke or a light uv radiation, a pulse wave uv radiation, or a continuous wave uv radiation, or wherein the G-ΐ ° will be low·k Exposure of the dielectric film to uv radiation can include a long UV _ in_feter) to about 600 nanometers of bottling. The exposure can be after IR exposure. Alternatively, UV exposure can occur between IR exposures. For example, iuv exposure during 1R exposure may contain wavelengths from about 300 nm to about 100 nm. 17 200949941 [0080] In 830, adjusting the mechanical properties of the resist, such as the mechanical properties of the low-k dielectric film, the hole size of the seven dielectric film of the low dielectric film, or the low voltage of the optical film A combination of nature and low's. The residual amount of the crosslinking inhibitor can be as follows: two or more of hydrophobicity, and plasma resistance. a other negative, including carbon concentration, _1] mechanical properties may include elastic mode properties may include a dielectric constant (k). Creativity f 4 fold f H, or both. Electricity _2] Adjust the residual rate of the crosslinking inhibitor (8).介 The dielectric film substantially removes the crosslinking inhibitor. For example, the crosslinking inhibitor is substantially removed prior to exposure to low pressure UV radiation. Exposing the low illusion film to =3] or 'adjusting the crosslinking inhibitor to [0084] or 'adjusting the residual amount of the parental inhibitor to the duration of the uv exposure during the package, uv 2 exposure UV dose, or a group of two or more of them. v Intensity A UV exposure ❹ Η 好 好 七 七 七 低 低 低 低 低 低 低 低 低 低 低 低 低 低 低 低 低 低 低IR radiation II 匕 3 exposes the low _k dielectric film to the third after UV exposure. Contains the low temperature dielectric to the first UV light after the exposure of the melon, and during the IR exposure period.

Radiation, wherein the second UV radiation system and the residual amount of the & exposure to the second UV agent may comprise adjusting the 5° = cross-linking inhibition during the IR exposure period, the uv intensity of the second UV exposure, the second 1H: uv exposure A combination of two or more of the durations. The dielectric film is exposed to a wavelength of from 300 nm to about 450 nm.罘UV radiation may comprise about [0087] optionally "may be exposed to IR, after IR exposure, after + τ, or a combination of two or more of them. Or controlled atmosphere 18 200949941 [0089] According to an example, the structure forming material may comprise diethoxymethylsilane 'DEMS, and the pore-forming material may comprise terpene, norbornene (norbene) 〇mene), 5· dimethyl q, 4_ cyclooctadiene • (5-dimethyl-M-cy—), decahydr〇 naphthale;, ethylbenzene, or lemon olein ( Lim〇nene), or a combination of two or more thereof. For example, the pore-forming material may comprise α_------------- ('a pull-e, ATRP) 依据 [0090] According to another example, a method of preparing a porous low-k dielectric film on a wire plate is illustrated. The method comprises: forming a siCOH-containing dielectric film on a substrate by a chemical vapor deposition (CVD) process, wherein the CVD process uses ® DEMS and a pore-forming material; and the exposure includes sic〇H The first duration of the electrical film to ir is sufficiently long to substantially remove the void-forming material; after the IR exposure, exposing the SiCOH-containing dielectric film to UV radiation for a second duration; and during the first duration The Sic〇H dielectric film is heated during part or all of the period. Exposing the SiCOH-containing dielectric film to ir radiation can comprise ir radiation having a wavelength of from about 9 microns to about 10 microns (eg, 9.4 microns). Exposing the sic 〇H containing dielectric film to UV radiation can comprise UV radiation having a wavelength of from about 1 nanometer nanometer to about 24 nanometers (e.g., 222 nm). Heating the SiCOH-containing dielectric film can include teaching the substrate to between about 300 ° C and about 500. (: Temperature. "' [0092] IR exposure and UV exposure may be performed in separate processing chambers, or ir exposure and UV exposure may be performed in the same processing chamber. [0093] The pore-forming material may comprise ruthenium a combination of a class, a borneol, a 5-dimethyl-1,4-cyclooctane, a deuterated naphthalene, an ethylbenzene, or a lemon olein, or a combination of two or more thereof. For example, a pore-forming material may be used. Included ~ terpinene (ATRp). [0094] Table 1 provides information on a porous low-k dielectric film that is expected to have a dielectric constant of about 2.2 to 2.25. Low porosity _k dielectric 臈 includes CVD process The formed porous SiCOH-containing dielectric film is formed using a structure forming material including diethyloxymethyl-stone (DEMS) and a pore-forming material including (X-terpinene (ATRP). The "original" SiCOH-containing dielectric film with nominal thickness (Angstrom, A) and refractive index (8) is exposed to IR radiation, resulting in "after IR" thickness (A) and "melon 19 200949941" refractive index (η After that, the "after IR" SiCOH-containing dielectric film is exposed to UV radiation while heating, resulting in "UV+heated" thickness (A) and "UV+ plus After heat, the refractive index (8).

-------->-^ 2· - XX , Z.11 | 4.4 ❹ [0095] Still referring to Table 1, the shrinkage (%) of the film thickness after IR and after UV is provided: The wavelength of UV and the UV exposure time (minutes, min) are provided. In addition, the dielectric constant (9) and the elastic modulus of the resulting hardened porous low-seven dielectric film are also provided. As shown in Table 1, the use of anaerobic radiation prior to uv radiation and heating results in 23 ' and as low as 2.09. In addition, a low dielectric constant (i.e., k-2.ll) can be achieved while achieving acceptable mechanical properties (i.e., E = 4 44 Gp [0096] for comparison purposes, without exposure to IR radiation. Next, the CVD process using the CVD process of SiC () H dielectric film & f f Ξ 2 Γ "υ ν + force, after" refractive index is about 8 to about "34, 'This result ϊ: En® The results provided in L 1 are high. A higher refractive index may indicate a method of oxidizing the material in the membrane, such as a lower porous membrane, and/or membrane oxidation: the method comprises: using a chemical vapor phase Deposition 3

^ SiCOH ^ CVD _ S_ dielectric film to ίΐ fFa1 5 ; Λ !R ί! During exposure of uv, 'exposure (10) earns 200949941 time; and after UV exposure, exposes SiCOH-containing dielectric film to second m-shot Maintain the fourth duration, one

[0098] The method may further comprise thermally containing a SiCOH dielectric film during a portion or all of the second duration. Additionally, the third duration may be followed by exposing the SiCOH-containing dielectric film to a second duration [〇〇99] to the IR radiation having a wavelength from micrometers to about 10 micrometers (e.g., 9.4 micrometers). Exposure of the Sic(R) containing hexa film to UV radiation can comprise UV radiation having a wavelength of from about 17 nanometers to about 23 nanometers (e.g., nanometer). Exposing the SiCOH-containing dielectric film to the second IR radiation may comprise IR-rays having a wavelength of from about 9 microns to about 1 micron (eg, 9.4 microns) exposing the SiCOH-containing dielectric film to the third IR radiation. IR radiation having a wavelength of about 10 microns (e.g., 9.4 microns). Heating the Sic〇H containing dielectric film can include heating the substrate to a temperature of about 30 (TC to about 500 ° C. [00100] The pore-forming material can comprise ruthenium a combination of steroids, borneol, 5-dimethyl ι, 4_cyclooctadiene, decalin, ethylbenzene, or limonene, or a combination of two or more thereof. For example, the pore-forming material may comprise α. _ Terpinene (ATRp) [00101] Table 2 Length: Information for a porous low-k dielectric film expected to have a dielectric constant of about 2.2 to 2.25. Low porosity _k dielectric film comprising CVD The porous SiCOH-containing dielectric film formed by the process uses a structure forming material including diethyloxymethyl decane (DEMS) and a pore-forming material including α_terpinene (ATRp). "Original" SiCOH-containing dielectric film with nominal thickness (Angstrom, Angst surface, A) and refractive index (n) 'ie: (丨) conventional uv/thermal energy (i.e., no IR exposure); and (2) exposing the original film to IR radiation (94 microns), then exposing to IR radiation (9.4 microns) and Uv radiation (222_, then exposure to IR light (9.4) Table 2 Original uv / shrinkage after heat treatment k E 厚度 Thickness (A) η 6100 1.495 Thickness _(Α) η 5350 1.329 Post-(%) (GPa) (GPa) 13 2.2 4.51 0.45 21 200949941 Original IR+UV/IR+IR post-shrinkage k E Η thickness (A) η thickness (eight) η post _(%) (GPa) (GPa) 6137 1.488 5739 1.282 6.5 2.1 3.99 0.28 6107 1.5 5473 1.297 10.4 2.1 4.26 0.35 6173 1.498 5483 1.302 11.2 2.1 4.71 0.46 6135 1.499 5374 1.306 12.4 2.1 4.78 0,48

[00102] Table 2 provides the "UV/heat treated" thickness (A) and the "UV/heat treated" refractive index (n) of the conventional UV/thermal process, and the "IR" after the ir+uy/ir+ir process. +UV/IR+IR "thickness (A) and "IR+UV/IR+IR" refractive index (8). Further, the shrinkage ratio (%) of the film thickness after UV/heat treatment and after IR+UV/IR+IR was provided. Further, the dielectric constant (k), the elastic modulus (E) (GPa), and the hardness (H) (GPa) of the resulting hardened porous low-k dielectric film are provided. As shown in Table 2, the use of IR radiation before UV irradiation and heating, and during and after UV exposure resulted in a dielectric constant less than 2.; In addition, a low dielectric constant (i.e., k = 21) can be achieved while achieving acceptable mechanical properties, i.e., E = 4.71 GPa and H = 0.46 GPa. In contrast, the IR+UV/IR+IR hardening process produces a lower dielectric constant with less shrinkage. In addition, the mechanical properties of the two hardening processes and the printing system are about the same. [00103] Thus, the use of IR exposure and UV exposure can result in the formation of a diethoxymethyl decane (DEMS) based porous dielectric film comprising a dielectric of about 21 or less; ^, about 1.31 or less. The refractive index, an elastic modulus of about 4 GPa or more, and a hardness of 0.45 GPa or more. [00104] 纟3 provides a tilt of a porous low-seven dielectric film that is expected to have a dielectric constant of about two. The low porosity of the _k dielectric film consists of a CVD process containing SCOH dielectric 臈 'This CVD process uses a lion sulphate including diethyl ethoxymethyl sulphate (DEMS) and &alpha_# AT ^ ^ ^ The original contains (IV) H dielectric film, namely: (1) heat month b process (ie no 1r exposure); (2) only the original film layer is exposed to IR radiation (94 micro-not) hardening process; (3) in the ha (4) Prior to the thermal process, the original film layer is exposed to a hardening process from 200949941 to IR radiation (9.4 microns); and (4) the original film layer is exposed to IR radiation (9.4 microns)' and then exposed to IR radiation (9.4 microns). And UV radiation (222 nm), then exposed to IR radiation (9.4 microns) hardening process. Table 3 Process Type η Shrinkage (%) k E(GPa) H(GPa) UV/ Thermal Energy 1.275 33 1.92 2.52 0.28 IR 1.174 15 1.66 1.2 0.1 IR+UV/Thermal Energy 1.172 29 1.65 2.4 0.33 IR+UV/IR+ IR 1.172 26 1.68 2.34 0.28 1.164 29 1.66 2.08 0.25 ❹ (%) Μ Table 3 provides the refractive index (η), shrinkage permittivity (k), and elastic modulus (E) of each of the hardening processes ( GPa) and hardness (H) (GPa) results. The use of IR radiation (with or #uv radiation) as shown in Table 3 results in a dielectric constant lower than 丨7 (and = greater than 1.9). When only the IR radiation is used to harden the original film layer, a low dielectric number (i.e., k = 1.66) can be achieved while achieving acceptable mechanical properties, i.e., =1.2 GPa and H = 0.1 GPa. However, when IR radiation and uv radiation are used to harden the original film layer, a low dielectric constant can be achieved (also gpk = 16 ❿ f E = 234GPa XH = 0.28 GPa 〇 ^ lower dielectric constant (k = J 1.68) Further, when using IR light, the mechanical properties (E and Η) can be improved by using w. ~ 射陶06] Therefore, using IR radiation and UV radiation can lead to the formation of y_S Planting, which comprises a hardness of about GP2 GPa or greater. ^ Large elastic wheel number, and about, an embodiment 'Figure 5A shows the degree of treatment of the dielectric film on the substrate 23 200949941, the contaminants contain For example, moisture, water materials, residual pores, structure formation: agents, impurities, pore formation molecules, fragments of pore-forming molecules, weakly bonded side groups, holes, or any other may interfere with hardening System 丨卩 剂 剂 剂 剂 [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ [ Reduce the amount of the brain. The extent of the reduction of pollutants can be used 7; 7^fuLd 5 FTIR)^^ ^»^s; spe^oscop^^^^ Measure or, for example, sufficiently to make the specific p-contaminant m in the dielectric m m to 100%. Or, for example, the sigma/'80% can be sufficiently To ι_. ^ The specific contaminant reduction in the H-axis ΓΓΙ] Qing 5A, hardening 1G can be used to improve the dielectric f by causing or partially causing cross-linking in the dielectric film to harden the mediation Hardening the dielectric film by causing or partially causing cross-linking, ❹ ίίί1 forming materials, decomposing pore-forming materials, etc. Hardening U10 may include - or more radiation sources to expose the substrate having the dielectric film to multiple electromagnetic wavelengths Electromagnetic (electron) radiation. For example, one or more radiation sources may include infrared (IR) source and material. The substrate may be exposed to the substrate simultaneously, sequentially, or partially overlapping. Radiation and IR radiation. During sequential exposure, the substrate may be exposed to UV light, for example, prior to or after exposing the substrate to IR light. Alternatively, during sequential exposure, for example Exposing the substrate to the uv radiation or exposing the substrate After uv radiation or both, the substrate is exposed to scale radiation. [00110] For example, IR radiation can comprise an IR radiation source of between about 1 micron and 25 microns. Further, for example, IR radiation can range from about 2 microns to about 20 microns. In the range, or in the range of from about 8 microns to about 14 microns, or in the range of from about 8 microns to about 12 microns, or in the range of from about 9 microns to about 10 microns. Further, for example, uv radiation can comprise about 1 inch. UV source of radiation from nanometer (nm) to about 600 nm. Further, for example, UV radiation may range from about 200 nm to about 400 nm, or from about 150 nm to about 3 〇〇 nm, or from about I70 nm to about 240 nm, 24 200949941 or from about 200 nm to about 240 nm. . [ΓΓ2Ι, shown] can transfer the transfer system 3G to the drying system 20, so that the transfer substrate enters and exits the drying system 2〇 and the hardening system 1〇, and the substrate is exchanged. The transmission 3G can transport the substrate to and from the dry 1G while maintaining the vacuum environment. The drying and hardening system plus one can be used to include the processing in the multi-component manufacturing system 40, for example, the multi-component 4 manufacturing pure 4G can transfer the substrate to and from the process, and can be coupled with == Health: Medium = Pieces. Drying and hardening system 2. And 10, and the transport system = drying system 20, or hardening system 10, or an electric film, in another embodiment of the invention 'Figure 5 Β shows the processing substrate

r^rM ❹ Used for Chiang Kai-Ray to aim tb·^ ^, cookware. For example, the drying system 110 can inhibit the contaminants, pore-forming materials, and/or cross-linking components, and the extent of the emulsifier. The contaminants contain, for example, moisture, weakly bonded side groups of the water material. Hole retention, hole formation material, structure formation (10) in the hardening process m or any other may hinder the hardening system

In addition to IT^m iVZ, the processing system 1 must improve the mechanical properties of the dielectric film. The system 140 is also processed. For example, the treatment changes the post-product of the hardened dielectric film to enhance the subsequent film coating or vapor deposition, for example, by exposing the substrate; for example, 25 200949941, in the back of the county A hybrid improvement. == Grounding as shown in Fig. 5B' can be transferred to the drying system to the dry age system 11G, and can be transported to the processing system (10) for transporting the substrate. The transport system 13G can transport the substrate system 120 and the optional post-processing system i4. At the same time, the transmission system i3G can be used with - or more substrates e (not shown). Figure 5b shows only two or three processing systems, others include processes such as surnames, coating systems, diagrams, and measurement systems. In order to isolate the occurrence of the drying and hardening system, the system is coupled to the assembly 15G. For example, the isolation assembly 150 can be used to provide at least one thermal insulation assembly and to provide vacuum isolation. Further, for example, the delivery system 130 can be used as the isolation assembly 15 . [00117] The IR exposure of the substrate can be in the drying system 110, or the hardened wire 120, or a separate process (not shown) on the wafers, and in another embodiment of the invention. Figure 5C shows the processing substrate and system 2 (K). The processing system includes a drying system 210, a hardening system 220. For example, the drying system 21 can be used to remove, or reduce, one of the dielectric films, or the film-forming material, and the cross-linking surface, such as moisture, moisture, solvents, impurities, The hole is rushed into a hole, and the hole is weakly bonded to the side of the structure forming material! 卞1 The knives, the fragments of the pore-forming molecules, the crosslinking inhibitor, and the cross-linking 4 are not likely to interfere with the hardening line 22G. In addition, for example, the hardening system 220 can be used to harden or smear by causing or partially causing two cross-linking, such as improving the mechanical properties of the mediation. For example, post-treatment may include thermal energy heating. Further, for example, post-treatment may include 26 200949941 spin coating or vapor deposition adhesion or improved hydrophobicity on the dielectric film.歼 歼 歼 歼 歼 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子 离子m β is made horizontal Or vertical configuration (ie, and ff system 240 transfer system 230 is lightly connected to the drying system ^ Figure 5 = pinning 'can be used to transfer the transfer system 230 to the hardened substrate to and from the drying system; 220; The transfer system feeds the substrate into and out of the hardening system out-of-treatment system 240. The system 240 at the Lith 23Q is transmitted to convey the substrate into the hardening system. And it is not necessary to maintain the vacuum environment during the transfer of the system. Although the Fig. 5CM 堇 亍 二 二 二 二 二 二 ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( ( 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍 仍Alternatively, the treatment system J can be used with the isolation assembly 25. Each of the systems contains at least one of the means for providing thermal insulation, such as a catwalk valve assembly, and, for example, a conveyor system for providing vacuum isolation. The pan-system 23 can be used as one of the isolation components 250 27 1 10 2 substrate in the drying system 20 and the transport system 3 () ^ fm port 3 substrate in the drying system 20 and hardened _ 1Q ^ ^ ^ == 3 100 5C 200 ΧΐΖ Xuji = over = 210, 22G, 240 respectively contain at least one pass The opening is provided for the capacity of the substrate. [00124] Referring now to Figure 6, a drying system 200949941 is shown in accordance with another embodiment of the present invention. The Leica system 300 includes a base bag for producing a dry substrate placed on the substrate holder 32. Drying chamber 310 for human, non-contaminating environment. Drying system, heat treatment device 330 of the $310 silk plate holder 320, and the temperature of the substrate 325 is evaporated to evaporate pollutants, such as moisture. In addition, the drying system 300 can include a coupling to the drying chamber, and the ribs locally add two dyes in the case of a vibrating yard. The drying system can utilize heat treatment device 330, or microwave treatment device 340, or both to assist in drying the dielectric film on substrate 325.

[〇〇125] The heat treatment device 330 can include one or more conductive heating elements embedded in the substrate holder 320 that are coupled to the power source and temperature controller. For example, each heating element can include a resistive heating element coupled to a power source for supplying electrical power. Alternatively, the heat treatment device 330 can include one or more radiation heating elements coupled to the power source and the controller. For example, each of the radiating heating elements may include a heat lamp that is lightly coupled to a power source for supplying power. The temperature of the substrate 325 can range, for example, from about 2 (rc to about 600 ° C, and preferably, the temperature can range from about 2 ° C to about 6 ° C. For example, the substrate 325 The temperature can range from about 300 〇C to about 500. (:, or 350 ° C to about 450 ° C. [00126] The microwave processing source 340 can include a variable frequency for scanning the microwave frequency through the frequency bandwidth. The rate of microwave source. The frequency change avoids the increase in charge and thus allows the microwave drying technique to be applied to sensitive electronic devices without damage. [00127] In an example, the drying system 300 can include a combination of a variable frequency microwave device and a heat treatment device. A drying system, such as a commercial microwave oven from Lambda Technologies, Inc. (860 Aviation Parkway, Suite 900, Morrisville, NC 27560). [00128] The substrate holder 320 may or may not be used to hold the substrate 325. For example, the substrate holder 320 The substrate 325 can be mechanically or electrically held. [00129] Further, the drying system can include an IR source for exposing the substrate 325 to IR radiation. [00130] Referring again to FIG. 6, the drying system 300 More include coupling a gas injection system 350 to the drying chamber, and which is used to direct the flushing gas to the drying chamber 310. 28 200949941 = The scrubbing gas may, for example, contain a naval gas such as a rare New Zealand gas. In addition, the system 300 may include coupling to dryness. The vacuum pump system 355 of the chamber 310 is used to evacuate the drying chamber 310. During the drying process, the substrate 325 can be placed in an inert gas environment under vacuum conditions. The second step is [00131] The 300 may include a controller, 360, which is smashed by $, dry-31, substrate holder 32, heat treatment device 33, microwave processing device 34, body spray system, system 350, and vacuum fruit system 355. The device 36 includes a memory, and a digital I/O bee, which can generate a control voltage, which is input from the k and the Kailin drying system 300, and monitors the output from the drying system. The program in the memory is used to interact with the drying system 300 in accordance with the stored process ©. Any number of controllers (310, 320, 330, 340, 350, or 355) can be configured using the controller 36〇, and the controller 36〇 acceptable ^ Providing, processing, storing, and displaying the tilt from the processing element. The controller % includes many applications for controlling one or more processing elements. For example, the controller 360 can include a graphical user interface (graphically 丨 如 如 ^ Side), which provides an interface for the user to monitor and/or (4)- or more processing elements. =0132], the hardening system, first 400 is shown in accordance with another embodiment of the present invention with reference to Fig. 7'. The hardening system 4 includes a hardened chamber 410 for producing a clean, non-contaminating environment for hardening the enamel plate 425 placed on the substrate holder 42. Hardening system 4 〇 soil 〇 more package. A light source comprising - or more, is used to expose a substrate 425 having a dielectric film to an electro-magnetic (EM) radiation of an early, multiple, narrow band, or broadband electromagnetic wavelength. One or more of the radiation sources may include a non-essential source 440 and a UV source 445. It can be exposed to UV radiation and unwanted IR radiation simultaneously, sequentially, or with each other. [00133] The IR radiation source 440 can include a broadband IR source (e.g., pleochroism) or can include a narrowband IR source (e.g., monochromatic). The IR radiation source may comprise one or more IR lamps, one* or more, more 1R LEDs, or one or more 1R lasers (continuous wave, C〇ntiim〇us wave (CW), 乂 、, or brewing waves ), or any combination thereof. IR power density can be high. For example, the IR power density can range from about one to about 29 200949941. The IR wavelength can range from about 1 micron to about 25 microns = the emission wavelength can range from about 8 microns to about 14 microns. Or, also ίΐίί can be about 8 reddish about 12 microns. Alternatively, the IR radiation it is in the range of about 1 micron. For example 'IR radiation source 44 〇 2 3 2 laser system. In addition, for example, the IR radiation source 440 can include a 1R component having a spectral output of about [micron], such as a ceramic component or a carbonization fossil imt40, which can include a semiconductor laser (diode) with optical parameter amplification, or ions, Titanium sapphire (Ti: sapphire) laser; or dye laser. e ❿ 11 11 11 source 445 may comprise a broadband UV source (eg pleochroism) or a 乍 3 乍 band UV source (eg monochromatic) (3 UV radiation source may comprise one or more υ ν lamps, multiple UV LEDs, or - or more υ ν lasers (continuous wave (cw), adjustable, Ϊ Ϊ any combination of them. For the paste, 'UV radiation can be generated by microwave source, electric fox discharge, 障 electric barrier discharge, or electron impact generation. The UV power density may range from f.O.lmW/cm2 to about 200〇mw/cm2. The UV wavelength may range from about 1 〇〇 not meters (nm) to about 600 nm. Alternatively, the uv light-wavelength wavelength may be The range of about 2 〇〇 nm to about 4 〇〇 T. Alternatively, the uv radiation wavelength may range from about to about 300 nm. Alternatively, the uv radiation wavelength may range from about 17 〇 nm to about 24 _. The uv radiation wavelength can range from about 200 nm to about 24 〇 nm. For example, the UV radiation source 445 can comprise a direct current (DC) or pulse wave lamp having a spectral output of from about 18 〇 nm to about nm, such as 氘. The uv radiation source 445 may comprise a semiconductor laser (diode), a (nitrogen) gas laser, a triple (or quadruple) frequency Nd:YAG laser, or a copper vapor laser. [00135] IR radiation Source 440, or UV source 445, or both, can include any number of optical devices to adjust the properties of one or more output radiation. For example, each source can be more expensive H-mirror, county (b_expan (4) A beam collimator, etc. Such an optical operating device as known to those skilled in the art of optical and electromagnetic wave propagation is suitable for use in the present invention. [00136] The substrate holder 420 may further comprise a Or a temperature control system that controls the temperature of the substrate 425. The temperature control system can be part of the 埶 processing device 43. The substrate holder 420 can include one or more conductive layers embedded in the substrate holder 42. 200949941 'It's connected to the electricity and temperature control. It is said that each of the 70 pieces of heating can contain the electric resistance of the power supply to the (4) power supply - Qi Xiangxie coffee hot tillage. Based on the surface of the _ ° C Preferably, and preferably, the temperature is in the range of 200 C to about _ C. For example, the temperature of the substrate 425 is about 5 〇 (the range of TC, or about 35 (rc to about 45 (^) In the range of 隹, 〇i〇H α In addition, the substrate holder 420 can be used with or without a clip Substrate 425. 歹1, the soil support 420 can be used to mechanically or electrically hold the substrate 425. ^138] Referring again to Figure 7, the hardening system 4 can further include a gas nozzle system 450 that is lightly coupled to the hardened chamber. 'And it is used to guide the flushing gas into the hardening chamber. The scrubbing gas may, for example, contain an inert gas such as a rare gas or nitrogen. Alternatively, the flushing body may contain other gases such as cis, cis, CxHy, or any basin. combination. Further, the hardening system 400 may further include a vacuum coupled to the hardening chamber 41, a pump system = 5 ' and which is used to evacuate the hardening chamber 41. During the hardening process, the substrate can be placed in a flushing gas environment with or without vacuum conditions. [〇〇13^] In addition, the hardening system 400 can include a controller 460 coupled to the chemical chamber 410, the substrate holder 42〇, the heat treatment device 43〇, the IR radiation source 44〇, uv

G source 445, gas injection system 450, and vacuum pump system 455. The controller 46 is s Μ Μ processor, memory, and digital 1/〇埠, which can generate a control voltage, = control voltage is sufficient to communicate and initiate input to the hardened system 4, and monitor the erosion hardening system 400 output. Use the program stored in the memory to interact with the hardening system according to the process recipe. Any number of processing elements (410, 420, 430, 440, 445, 450, or 455) can be configured using the controller, and the controller 460 can collect, provide, process, store, and display from the processing elements = data . Controller 460 can include a number of ways to control one or more processing elements. For example, controller 460 can include a graphical user interface (GUI) component (not shown) that provides a convenient interface for the user to monitor and/or control one or more processing elements. [00140] The controllers 360 and 460 can be implemented in the form of DELL PRECISION WORKSTATION 61〇tm. The controllers 36 and 46 can also be used as a controller for a computer, a processor, a digital signal processor, etc., and a 460, for example, a computer; a program; or more programs, and Part of the invention = instruction of the instruction _, _ _ material ', = have = this or other information of this class. Examples of computer-readable ships are optical disk dogs, flexible disks, magneto-optical disks, PR0M (EPR0M, EEp flash DRAM, SRAM, 嶋M, or any other magnetic, CD-ROM), or any other optics. Media, punch card, paper tape ^^= ❹ ί ί media 3 wave (叮纲 two 彡 物 杂 杂 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , or Secret Internet or 0 I. ΪΓ 4〇0 ° ^ ^ L Direct connection, line, internal network, and Internet, while disk drying system 300 and hardening system 400 exchange data. Controller 36〇 and cup to; internal network based on ff standing _ 卩 device manufacturer), or _ recording the internal network of the vendor location (ie equipment manufacturer, etc.). In addition, the controller, server, etc. can access the controllers 36〇 and 46〇 to exchange data via the connection, the internal network, and the Internet. [00=2] Correctively, embodiments of the present invention may be used as or in support of a processing core (such as a processor of a computer, such as a controller or a software program implemented or implemented on the media). The read ship contains any secrets that can be read by the machine. The machine-readable ship can contain, for example, the following media. Read only memoiy (R0M), random deposits, silk age, and flash m. Although some embodiments of the present invention have been described in the above details, it will be readily appreciated that in the case of the novel teachings of the present invention and the preferred 32 200949941 points, There may be many variations. Therefore, the plan includes all such variations within the scope of the present invention. [Simple Description of the Drawings] [0015] In the accompanying drawings: [0016] [0018] [0019] 1 is a flow chart of a method of processing a dielectric film according to an embodiment; FIG. 2 is a flow chart of a method of processing a dielectric film according to another embodiment, FIG. 3 is a process according to another embodiment; Flowchart of the method of electrical film FIG. 4 is a process for processing a dielectric film according to another embodiment. Flowchart of the method _ _ _ FIGS. 5A to 5C are schematic diagrams of a transfer system for a drying system and a hardening system according to an embodiment; W 6 is an illuminating-implementing a dry (four) _ rough turning view; and FIG. 7 A schematic cross-sectional view of a hardening system according to another embodiment. [Description of main components] 1 Processing system 10 Hardening system 20 Drying system 30 Transfer system 40 Multi-component manufacturing system 50 Isolation assembly 100 Processing system 110 Drying system 120 Hardening System 130 Transfer System 140 Aftertreatment System 150 Isolation Assembly 200 Processing System 210 Drying System 220 Hardening System 230 Transfer System 33 200949941 240 Aftertreatment System 250 Isolation Components * 300 - 310 320 325 330 340 350 355 〇 360 400 410 420 425 430 440 445 450 455 © 460 500 510 520 530 600 610 620 '630 - 640 Drying system Drying chamber Substrate Bracket substrate Heat treatment unit Microwave processing unit Gas injection system Vacuum pump system Controller Hardening system Hardening chamber Substrate Bracket Substrate Heat treatment device IR radiation source UV radiation source Gas injection system vacuum pump system control Flowchart Drying Dielectric Film in Drying System Exposing Dielectric Film to Ultraviolet (UV) Radiation Exposing Dielectric Film to Infrared (IR) Radiation Flowchart Forming Low-k Dielectric Film on Substrate Will Low-k Exposure of the electrical film to first infrared (IR) radiation exposing the low-k dielectric film to ultraviolet (IR) radiation exposing the low-k dielectric film to second infrared (IR) radiation 34 200949941 700 710 720 730 740 800 810 820 830

The flow chart of the crane 'reporting k ^ 钱 构 constituting material substantially removes the pore-forming material to form a low porosity forming initiator flow chart. The low-k dielectric film comprising the structural forming material forms a low-k on the substrate Dielectric film and crosslinking inhibitor, exposure of the film to IR light-radiation adjustment cross-linking inhibitor residue

35

Claims (1)

200949941 VII. Patent application scope: h A hardening method for a low dielectric constant (lower) dielectric film on a substrate, comprising: forming a low-k dielectric film on a substrate; 'putting the low_k dielectric Exposing the film to a first infrared (ir) light shot; after exposing to the 帛-IR fine step, the lin-low dielectric film is exposed to an ultraviolet (UV) radiation; and the exposure to the UV After the step of irradiating, the dielectric-like film is exposed to a second infrared (IR) radiation, wherein the low-k dielectric film has a dielectric constant less than about one of four. ❹ ❹ ^ Low dielectric constant on the board (low (4) dielectric film hard in the first-IR exposure _ ' by raising the substrate - temperature to - the first melon ί 板上 plate low dielectric constant ( Low-k) dielectric film hard inside. ', ~ first", processing temperature is about 350 ° C to about 450. (: range (four) electric Chang Na · _ film hard during 5 Hai UV exposure 'borrowed By raising the base-one field = thermal successor dielectric film, the uv heat temperature is about: ΐ to: 600: C of 6. According to the application of the Μ丨 slave silk from the dielectric constant (like) dielectric The film of the hard 36 200949941 method further comprises: heating the low-k in the second melon exposure by heating the substrate to a temperature, the second IR heat treatment &amp; 200° C to a range of about 600 eC. Also in the vicinity of the bamboo. 8. A low dielectric constant (lower) dielectric® hardening method on a substrate of the patent application range f1, wherein the first IR exposure is The UV exposure is performed in one of the different processing systems. 1 9·If applying for a hardening method on a substrate (low-k) dielectric film which is suspected of being 11帛1, the first IR exposure is The uv Execution in the same processing system. , '' 10. The method of hardening a low dielectric constant (lower) dielectric film on a substrate according to claim 1 of the patent application, wherein the low-k dielectric film is exposed to The step of UV radiation comprises exposing the low-k dielectric film to polychromatic UV radiation, monochromatic UV radiation, pulse uv radiation, w or continuous wave uv radiation, or a combination of two or more thereof. A method for hardening a low dielectric constant (low-k) dielectric film on a substrate of claim 1 wherein the step of exposing the low-k dielectric film to uv radiation comprises exposing the low-k dielectric film To uv light shots from one or more UV lamps, one or more UV LEDs, or one or more UV lasers, or a combination of two or more thereof. 37 1 I2. A method of hardening a low dielectric constant (low-k) dielectric film on a substrate of the first aspect, wherein the step of exposing the low-k dielectric film to UV radiation comprises exposing - the low-^ dielectric film to having UV radiation having a wavelength of from about 200 nm to about 400 nm. 200949941 I3. Low dielectric constant (low-k) dielectric film on a substrate as claimed in claim 1 And a method of exposing the low-k dielectric film to UV radiation comprising exposing the low-k dielectric film to radiation having a wavelength of from about 2 nanometers to about 24 nanometers. a method for forming a low dielectric constant (low-k) dielectric film on a substrate of the range 帛1, wherein the low-level dielectric film is exposed to the step of the first JR radiation to a multi-color IR ray, Monochromatic Han radiation, pulse wave or continuous wave IR radiation, or a combination of two or more thereof. ❹L. For the application of the low dielectric constant on the substrate of the first item (lower dielectric film formation method), the step of exposing the low-k dielectric film to the first IR-off film comprises a film to / uv radiation from one or more 1 heart, one or more 1R led, or a second-time R laser, or a combination of two or more thereof. On the low dielectric constant (low _k) dielectric film, ίί, 中 露 露 - low - let the dielectric film to the first or second melon radiation step g = expose the low-k dielectric Membrane to a low dielectric constant (lower) dielectric film on a substrate of the first range of the Han range having a wavelength of from about 8 micrometers to about 12 micrometers, wherein the low seven dielectric film iUV The step further includes: 汛 畐 该 该 该 该 该 uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv uv The method of exposing the Wei to the fresh three IR touches is to expose the road. The k dielectric rainbow has an electric film having a wavelength of about 8 to about u micron. 19. The low range on the substrate of the patent application range 帛1 Dielectric constant (lower)介38 200949941 Hardening method, further comprising: film, cleaning the dielectric film, or exposing the dielectric film: the following - or more steps to process the film to the plasma. Hardening side i: recorded ((4) The dielectric film's low-level seven-inclusive - her porous ❹ 的 2 2 poems 1 Shen Fang t special substrate on the low dielectric constant (low seven) dielectric film (norbo_e) wide 5-11 generation The material comprises terPene, norbonrene, 5-monomethyl i, 4 cyclooctadiene, ten, b stupid, or lemon noodles (four), or its 厶23. The low dielectric constant (low_k) dielectric film hardening method on the substrate further comprises: exposing the low-k dielectric film to a second radiation during the first IR exposure of βH, wherein the pair is 11 ¥#|The shooting system is different from the uv radiation after the _IR exposure. 24. The low dielectric constant (low seven) dielectric enthalpy hardening method on the substrate of claim 23, wherein the The second UV radiation comprises exposing the low-k dielectric film to UV radiation having a wavelength of between about 300 nm and 450 nm. 25. Low dielectric constant on the substrate ( VII) A method of hardening a dielectric film, comprising: forming a low-k dielectric film on a substrate, the low-k dielectric film comprising a structural shape 39 200949941 material and a hole generating material; and exposing the low- The k dielectric film to the infrared (IR) light shot maintains a first duration; the radiation dimension (2) is unique, and the low _k dielectric film is exposed to the ultraviolet ray - the second duration is less than the first duration - And one of the first-days (four) %· A method of hardening a low dielectric constant (low·k) dielectric film on a substrate, comprising: forming a contact dielectric film on the μΪΓ substrate, the low-k dielectric film comprising a structure forming material and a hole generating material </ RTI> </ RTI> </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; </ RTI> <RTIgt; After the step of producing the crosslinking initiator, the porous low-k dielectric film is crosslinked. The hardening method of the dielectric constant (low_k) dielectric film on the wire of the hexagram is further included: cutting the bond in the low-k dielectric film to assist the removal step. 28. A method for hardening a low dielectric constant (lower seven) dielectric film on a substrate, comprising: forming a low dielectric film on a substrate, wherein the low-k dielectric film comprises a structure forming material and a crosslinking inhibitor; exposing the low dielectric film to infrared (IR) radiation; and adjusting the crosslinking inhibition-face amount, and closing the low-k dielectric film, the property, the low An electrical property of the dielectric film, an optical property of the low-voltage dielectric film, a hole size of the low-k dielectric film, or a porosity of the low-voltage dielectric film, or 1 or more a combination of people. , 200949941 29. Low dielectric constant on a substrate as claimed in application No. 28 (low hardening method 'where the crosslinking inhibitor contains moisture, moisture, solvent, :, pore formation (4), residual pore-forming material , weakly bonding the side groups of the material to be opened, the pore-forming molecules, or the combination of the benefits of the ageing, or more. The poor dielectric = the low dielectric constant on the substrate as in claim 28 (Low seven) medium hardening method, wherein the cross-linking side comprises a pore-forming material: and, = with =, forming, the cross-linking inhibitor of the dielectric enthalpy = base-surface copolymerization - structure formation The low dielectric dip on the substrate of the molecule and the hole (the low dielectric film t of the cross-linking inhibitor) has a weak bond to the structure to form the hole of the knife. A structure forming molecule that becomes a side group. 低 The low dielectric constant (like) dielectric film on the substrate of the 28th item of the application of Λ Λ 在 在 在 在 在 在 ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' ' a crosslinking method of the crosslinking inhibitor, wherein the crosslinking Formulation 2; the external line _ light shot step is substantially removed 2 to expose the low k) 丨 film to purple 34. One of the 5 hr IR exposure on the substrate of claim 28, I f is an IR dose, or a combination of two or more thereof. Degree or money exposure 200949941 35. A hardening method as claimed in the patent application, wherein the or both. Electrical constant (lower-phantom dielectric mechanical properties include an elastic modulus (E), or a hardness (1^, (4) 28-like substrate on a low dielectric constant _k) dielectric film modification method, in the The electrical properties include - dielectric constant (8). 28 基 红 红 红 _ _ 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 介 28 28 28 28 28 28 28 28 -k dielectric film is exposed to ultraviolet (UV) radiation. 39. A method of hardening a low dielectric constant (low-k) dielectric film on a substrate according to claim 38, wherein the UV exposure is exposed to the IR exposure Thereafter, 40. A method for hardening a low dielectric constant (low seven) dielectric film on a substrate according to claim 38 of the patent application scope, wherein the UV exposure Department occurred in the exposure of some or all of the IR 41. A method of hardening a low dielectric constant (low seven) dielectric film on a substrate according to claim 38, wherein the step of adjusting the residual amount of the crosslinking inhibitor comprises adjusting during the IR exposure a combination of a duration of the UV exposure, a UV intensity of the UV exposure, or a uv dose of the uv exposure, or a combination of two or more thereof. 42. On a substrate as claimed in claim 28 A method of hardening a low dielectric constant (low-k) dielectric film, further comprising: exposing the low-k dielectric film to ultraviolet (UV) radiation after the IR exposure; 42 200949941 and during the UV exposure 'Exposing the low-k dielectric film to the second IR radiation. • 43. The method of hardening a low dielectric constant (low-k) dielectric film on a substrate of claim 42 of the patent application, further comprising: exposing the low dielectric film to the third after the UV exposure Ir radiation. 44. The method for hardening a low dielectric constant (low_k) smear film on a substrate of claim 28, further comprising: 'exposing the low-k dielectric film to the first after the IR exposure An ultraviolet (1) 乂) Korean shot, and during the IR exposure, the low-k dielectric film is exposed to a second uv light shot, wherein the second UV exposure is different from the first UV exposure. 8. The method of hardening a low dielectric constant (lower) dielectric film on a substrate of claim 44, wherein the step of adjusting the residual amount of the crosslinking inhibitor comprises adjusting the IR period A duration of the second UV exposure, a UV intensity of the second uv exposure, or a UV dose of the second UV exposure, or a combination of two or more thereof. 46. The method for hardening a low dielectric constant (low_k) dielectric film on a substrate of claim 28, further comprising: during 5 HAI IR exposure, § HI IR exposure, or after the IR exposure Or heating the substrate in any combination of two or more of them. A method for preparing a township low dielectric constant (low-k) dielectric film on a substrate, comprising: using a chemical gas A phase deposition (CVD) process forms a sic 〇H on a substrate, wherein the CVD process uses DEMS and a hole 43 200949941 to maintain a sufficiently long time-first-continuous ===, exposing the _ dielectric film, the radiation is maintained to maintain the sic0H film during part or all of the second duration. 48. A method of preparing a porous low dielectric constant (low-k) dielectric film on a substrate according to claim 47, wherein the pore-forming material comprises a box, a borneol thin, a 5-dimethyl-b A combination of 4-cyclooctadiene, decalin, ethylbenzene, or olein, or a combination thereof. 49. A method of preparing a porous low dielectric constant (low-k) dielectric film on a substrate according to claim 47, wherein the pore-forming material comprises alpha-terpinene (ATRP) ° 50_ a method for preparing a porous low dielectric constant (a low dielectric film on a substrate, comprising: 'forming a SiC〇H dielectric film on a substrate using a chemical vapor deposition (CVD) process> wherein the CVD The process uses diethoxy decyl decane (DEMS) and a pore-forming material to expose the SiCOH-containing dielectric film until the first IR radiation is maintained for a sufficient length for a first duration to substantially remove the void-forming material; After exposure to IR, 'exposure the Sic-containing H dielectric film to uv for a second duration; ' 曰 during the UV exposure, exposing the SiCOH-containing dielectric film to a second IR light strike for a third duration And S 'after exposure to the UV, exposing the SiCOH-containing dielectric film to the third IR light-emitting' to maintain a fourth duration. -, Tian, 200949941 51. As claimed in the patent application, the fifth interface of the W interface , including: red preparation of porous age electrical constants ( Membrane. The porous low dielectric constant is prepared by heating the Sic〇H dielectric dielectric film during part or all of the second duration (lower than 申. On the substrate, a method of making a book is used, and the hole-forming material is usually a combination of a τ-low methyl group, a cyclooctadiene, a decalin, a class, a norbornene, and a 5-two. The present or the sputum olein, or both or the second duration thereof overlaps the second duration. 55. A dielectric film comprising: A diethoxymethyl decane (DEMS) based porous dielectric film comprising one of a dielectric constant of about 7 or less, a refractive index of about one of L17 or lower, and one of about 15 GPa. The modulus of elasticity, and one of hardnesses of about 2 GPa or more. A composite dielectric film comprising: a diethoxy phthalocyanine (DEMS) based porous dielectric film comprising a dielectric constant of about 2.1 or less, about 1.31 or less One refractive index, one elastic modulus of about 4 GPa or more, and one hardness of about 4545 GPa or more. Eight, schema: 45