TW200604253A - Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film - Google Patents
Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming filmInfo
- Publication number
- TW200604253A TW200604253A TW094115183A TW94115183A TW200604253A TW 200604253 A TW200604253 A TW 200604253A TW 094115183 A TW094115183 A TW 094115183A TW 94115183 A TW94115183 A TW 94115183A TW 200604253 A TW200604253 A TW 200604253A
- Authority
- TW
- Taiwan
- Prior art keywords
- film
- organic silica
- forming
- based film
- semiconductor device
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Silicon Polymers (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004141200 | 2004-05-11 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200604253A true TW200604253A (en) | 2006-02-01 |
TWI314936B TWI314936B (zh) | 2009-09-21 |
Family
ID=38019351
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094115183A TW200604253A (en) | 2004-05-11 | 2005-05-11 | Method for forming organic silica-based film, organic silica-based film, wiring structure, semiconductor device and composition for forming film |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2005108469A1 (zh) |
CN (3) | CN1957020B (zh) |
TW (1) | TW200604253A (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI482218B (zh) * | 2007-10-30 | 2015-04-21 | Taiwan Semiconductor Mfg Co Ltd | 高介電常數閘極介電材料的形成方法與半導體元件 |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2009008041A1 (ja) * | 2007-07-06 | 2009-01-15 | Fujitsu Limited | 絶縁膜材料、多層配線基板及びその製造方法、並びに、半導体装置及びその製造方法 |
KR101824617B1 (ko) * | 2009-11-04 | 2018-03-14 | 삼성전자주식회사 | 유기실리케이트 화합물 및 이를 포함하는 조성물과 필름 |
KR102035434B1 (ko) | 2015-07-09 | 2019-10-22 | 도쿄 오카 고교 가부시키가이샤 | 규소 함유 수지 조성물 |
JP6641217B2 (ja) * | 2016-03-30 | 2020-02-05 | 東京応化工業株式会社 | 金属酸化物膜形成用塗布剤及び金属酸化物膜を有する基体の製造方法 |
CN106110906B (zh) * | 2016-07-15 | 2018-10-19 | 常州大学 | 一种亲水性有机硅膜的制备方法 |
JP6999408B2 (ja) | 2016-12-28 | 2022-02-04 | 東京応化工業株式会社 | 樹脂組成物、樹脂組成物の製造方法、膜形成方法及び硬化物 |
CN108917582A (zh) * | 2018-03-30 | 2018-11-30 | 华东理工大学 | 应变传感器及其制造方法 |
KR102572915B1 (ko) * | 2019-04-08 | 2023-09-01 | 메르크 파텐트 게엠베하 | 블록 공중합체를 포함하는 조성물 및 이를 사용하는 실리카질 막의 제조방법 |
JP7398550B2 (ja) * | 2019-08-21 | 2023-12-14 | インテグリス・インコーポレーテッド | 高度に選択的な窒化ケイ素エッチングのための改良された配合物 |
CN112563661B (zh) * | 2020-12-07 | 2022-05-27 | 界首市天鸿新材料股份有限公司 | 环保型纤维素基隔膜的制备方法及其在锂电池中的应用 |
-
2005
- 2005-04-28 CN CN2005800150934A patent/CN1957020B/zh not_active Expired - Fee Related
- 2005-04-28 CN CN2005800146286A patent/CN1950473B/zh not_active Expired - Fee Related
- 2005-05-11 JP JP2006513040A patent/JPWO2005108469A1/ja not_active Withdrawn
- 2005-05-11 CN CNA2005800150690A patent/CN1954017A/zh active Pending
- 2005-05-11 TW TW094115183A patent/TW200604253A/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI482218B (zh) * | 2007-10-30 | 2015-04-21 | Taiwan Semiconductor Mfg Co Ltd | 高介電常數閘極介電材料的形成方法與半導體元件 |
US9799523B2 (en) | 2007-10-30 | 2017-10-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Methods of forming a semiconductor device by thermally treating a cleaned surface of a semiconductor substrate in a non-oxidizing ambient |
Also Published As
Publication number | Publication date |
---|---|
CN1957020A (zh) | 2007-05-02 |
TWI314936B (zh) | 2009-09-21 |
CN1957020B (zh) | 2011-06-08 |
CN1954017A (zh) | 2007-04-25 |
CN1950473B (zh) | 2010-10-27 |
JPWO2005108469A1 (ja) | 2008-03-21 |
CN1950473A (zh) | 2007-04-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |