TWI292349B - - Google Patents

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Publication number
TWI292349B
TWI292349B TW094101151A TW94101151A TWI292349B TW I292349 B TWI292349 B TW I292349B TW 094101151 A TW094101151 A TW 094101151A TW 94101151 A TW94101151 A TW 94101151A TW I292349 B TWI292349 B TW I292349B
Authority
TW
Taiwan
Prior art keywords
decane
group
acid
polymer
butyl
Prior art date
Application number
TW094101151A
Other languages
English (en)
Chinese (zh)
Other versions
TW200536621A (en
Inventor
Nakagawa Hisashi
Akiyama Masahiro
Kurosawa Takahiko
Shiota Atsushi
Original Assignee
Jsr Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jsr Corp filed Critical Jsr Corp
Publication of TW200536621A publication Critical patent/TW200536621A/zh
Application granted granted Critical
Publication of TWI292349B publication Critical patent/TWI292349B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G77/00Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
    • C08G77/48Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02123Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
    • H01L21/02126Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08JWORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
    • C08J5/00Manufacture of articles or shaped materials containing macromolecular substances
    • C08J5/20Manufacture of shaped structures of ion-exchange resins
    • C08J5/22Films, membranes or diaphragms
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L83/00Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
    • C08L83/14Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09DCOATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D183/00Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
    • C09D183/14Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01BCABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/18Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
    • H01B3/30Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
    • H01B3/46Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02109Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02205Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
    • H01L21/02208Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
    • H01L21/02214Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
    • H01L21/02216Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104Forming layers
    • H01L21/02107Forming insulating materials on a substrate
    • H01L21/02225Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Silicon Polymers (AREA)
  • Formation Of Insulating Films (AREA)
  • Paints Or Removers (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Organic Insulating Materials (AREA)
TW094101151A 2004-01-16 2005-01-14 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film TW200536621A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2004009205 2004-01-16

Publications (2)

Publication Number Publication Date
TW200536621A TW200536621A (en) 2005-11-16
TWI292349B true TWI292349B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 2008-01-11

Family

ID=34792263

Family Applications (2)

Application Number Title Priority Date Filing Date
TW094101151A TW200536621A (en) 2004-01-16 2005-01-14 Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
TW094101152A TWI265172B (en) 2004-01-16 2005-01-14 and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating film

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW094101152A TWI265172B (en) 2004-01-16 2005-01-14 and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating film

Country Status (6)

Country Link
US (2) US20070015892A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
EP (2) EP1705206A4 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (2) JP5013045B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
KR (2) KR101129875B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
TW (2) TW200536621A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
WO (2) WO2005068539A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

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* Cited by examiner, † Cited by third party
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TW200536621A (en) * 2004-01-16 2005-11-16 Jsr Corp Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
WO2005068541A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
EP1719793A4 (en) * 2004-02-26 2009-05-20 Jsr Corp POLYMER AND MANUFACTURING METHOD THEREFOR, COMPOSITION FOR FORMING AN INSULATING FILM AND PRODUCTION METHOD THEREFOR
JP5110238B2 (ja) * 2004-05-11 2012-12-26 Jsr株式会社 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法
JP5110239B2 (ja) * 2004-05-11 2012-12-26 Jsr株式会社 有機シリカ系膜の形成方法、膜形成用組成物
EP1746123A4 (en) * 2004-05-11 2012-03-21 Jsr Corp METHOD FOR FORMING A FILM FROM ORGANIC SILICON OXIDE, ORGANIC SILICON OXIDE FILM, WIRE STRUCTURE, SEMICONDUCTOR DEVICE AND COMPOSITION FOR FILMING
US7790630B2 (en) * 2005-04-12 2010-09-07 Intel Corporation Silicon-doped carbon dielectrics
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WO2009008424A1 (ja) * 2007-07-10 2009-01-15 Jsr Corporation ケイ素化合物の製造方法
JP5348373B2 (ja) * 2008-05-29 2013-11-20 Jsr株式会社 ポリカルボシランの製造方法
JP5365785B2 (ja) 2008-05-30 2013-12-11 Jsr株式会社 有機ケイ素化合物の製造方法
JP5376118B2 (ja) * 2008-10-29 2013-12-25 Jsr株式会社 絶縁膜形成用組成物の製造方法、ならびに絶縁膜の形成方法
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TWI785070B (zh) * 2017-07-31 2022-12-01 美商陶氏有機矽公司 聚矽氧樹脂、相關方法、以及由其形成的膜
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US7462678B2 (en) * 2003-09-25 2008-12-09 Jsr Corporation Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film
JP4737361B2 (ja) * 2003-12-19 2011-07-27 Jsr株式会社 絶縁膜およびその形成方法
TW200536621A (en) * 2004-01-16 2005-11-16 Jsr Corp Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film
WO2005068541A1 (ja) * 2004-01-16 2005-07-28 Jsr Corporation 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物
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Also Published As

Publication number Publication date
EP1705206A4 (en) 2009-06-24
TW200538490A (en) 2005-12-01
JP5110243B2 (ja) 2012-12-26
JPWO2005068539A1 (ja) 2007-12-27
TW200536621A (en) 2005-11-16
EP1705207A1 (en) 2006-09-27
US7528207B2 (en) 2009-05-05
WO2005068539A1 (ja) 2005-07-28
KR101129875B1 (ko) 2012-03-28
JP5013045B2 (ja) 2012-08-29
JPWO2005068538A1 (ja) 2007-12-27
KR20060123548A (ko) 2006-12-01
EP1705206A1 (en) 2006-09-27
US20070021580A1 (en) 2007-01-25
KR20060123549A (ko) 2006-12-01
TWI265172B (en) 2006-11-01
EP1705207A4 (en) 2009-06-24
EP1705207B1 (en) 2012-10-24
US20070015892A1 (en) 2007-01-18
WO2005068538A1 (ja) 2005-07-28

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