TWI265172B - and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating film - Google Patents
and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating filmInfo
- Publication number
- TWI265172B TWI265172B TW094101152A TW94101152A TWI265172B TW I265172 B TWI265172 B TW I265172B TW 094101152 A TW094101152 A TW 094101152A TW 94101152 A TW94101152 A TW 94101152A TW I265172 B TWI265172 B TW I265172B
- Authority
- TW
- Taiwan
- Prior art keywords
- forming
- insulating film
- silica
- producing
- group
- Prior art date
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title abstract 6
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 239000000377 silicon dioxide Substances 0.000 title abstract 3
- 238000000034 method Methods 0.000 title abstract 2
- 150000001875 compounds Chemical class 0.000 abstract 4
- 238000009413 insulation Methods 0.000 abstract 3
- 125000005843 halogen group Chemical group 0.000 abstract 2
- 229920003257 polycarbosilane Polymers 0.000 abstract 2
- 229920000642 polymer Polymers 0.000 abstract 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 abstract 1
- 229910052783 alkali metal Inorganic materials 0.000 abstract 1
- 150000001340 alkali metals Chemical class 0.000 abstract 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 abstract 1
- 150000001342 alkaline earth metals Chemical class 0.000 abstract 1
- 125000003545 alkoxy group Chemical group 0.000 abstract 1
- 125000004435 hydrogen atom Chemical group [H]* 0.000 abstract 1
- 230000003301 hydrolyzing effect Effects 0.000 abstract 1
- 239000011229 interlayer Substances 0.000 abstract 1
- 239000000178 monomer Substances 0.000 abstract 1
- 125000000962 organic group Chemical group 0.000 abstract 1
- 239000003960 organic solvent Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910000077 silane Inorganic materials 0.000 abstract 1
- 239000000126 substance Substances 0.000 abstract 1
Classifications
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G77/00—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule
- C08G77/48—Macromolecular compounds obtained by reactions forming a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon in the main chain of the macromolecule in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J5/00—Manufacture of articles or shaped materials containing macromolecular substances
- C08J5/20—Manufacture of shaped structures of ion-exchange resins
- C08J5/22—Films, membranes or diaphragms
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L83/00—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers
- C08L83/14—Compositions of macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon with or without sulfur, nitrogen, oxygen or carbon only; Compositions of derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
- C09D183/00—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers
- C09D183/14—Coating compositions based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing silicon, with or without sulfur, nitrogen, oxygen, or carbon only; Coating compositions based on derivatives of such polymers in which at least two but not all the silicon atoms are connected by linkages other than oxygen atoms
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/46—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes silicones
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Polymers & Plastics (AREA)
- Materials Engineering (AREA)
- Health & Medical Sciences (AREA)
- Medicinal Chemistry (AREA)
- Wood Science & Technology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Silicon Polymers (AREA)
- Formation Of Insulating Films (AREA)
- Paints Or Removers (AREA)
- Organic Insulating Materials (AREA)
- Application Of Or Painting With Fluid Materials (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004009205 | 2004-01-16 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200538490A TW200538490A (en) | 2005-12-01 |
TWI265172B true TWI265172B (en) | 2006-11-01 |
Family
ID=34792263
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094101151A TW200536621A (en) | 2004-01-16 | 2005-01-14 | Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film |
TW094101152A TWI265172B (en) | 2004-01-16 | 2005-01-14 | and method for forming the same Composition for forming insulating film, method for producing the same, silica-based insulating film |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW094101151A TW200536621A (en) | 2004-01-16 | 2005-01-14 | Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film |
Country Status (6)
Country | Link |
---|---|
US (2) | US20070015892A1 (zh) |
EP (2) | EP1705207B1 (zh) |
JP (2) | JP5013045B2 (zh) |
KR (2) | KR20060123549A (zh) |
TW (2) | TW200536621A (zh) |
WO (2) | WO2005068538A1 (zh) |
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WO2005068540A1 (ja) * | 2004-01-16 | 2005-07-28 | Jsr Corporation | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
TW200536621A (en) * | 2004-01-16 | 2005-11-16 | Jsr Corp | Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film |
WO2005082976A1 (ja) * | 2004-02-26 | 2005-09-09 | Jsr Corporation | ポリマーおよびその製造方法、絶縁膜形成用組成物、ならびに絶縁膜およびその形成方法 |
JP5110239B2 (ja) * | 2004-05-11 | 2012-12-26 | Jsr株式会社 | 有機シリカ系膜の形成方法、膜形成用組成物 |
JP5110238B2 (ja) * | 2004-05-11 | 2012-12-26 | Jsr株式会社 | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
WO2005108469A1 (ja) * | 2004-05-11 | 2005-11-17 | Jsr Corporation | 有機シリカ系膜の形成方法、有機シリカ系膜、配線構造体、半導体装置、および膜形成用組成物 |
US7790630B2 (en) * | 2005-04-12 | 2010-09-07 | Intel Corporation | Silicon-doped carbon dielectrics |
JP2007045966A (ja) * | 2005-08-11 | 2007-02-22 | Fujifilm Corp | 絶縁膜形成用組成物、絶縁膜、およびその製造方法 |
WO2007055097A1 (ja) * | 2005-11-11 | 2007-05-18 | Jsr Corporation | ポリカルボシランおよびその製造方法、塗布用シリカ系組成物、およびシリカ系膜 |
US7714092B2 (en) * | 2006-01-13 | 2010-05-11 | Starfire Systems, Inc. | Composition, preparation of polycarbosilanes and their uses |
JP5120547B2 (ja) | 2006-02-02 | 2013-01-16 | Jsr株式会社 | 有機シリカ系膜およびその形成方法、半導体装置の絶縁膜形成用組成物およびその製造方法、ならびに配線構造体および半導体装置 |
JP5007511B2 (ja) * | 2006-02-14 | 2012-08-22 | 富士通株式会社 | 露光光遮蔽膜形成用材料、多層配線及びその製造方法、並びに半導体装置 |
JP5423937B2 (ja) * | 2006-03-23 | 2014-02-19 | Jsr株式会社 | 絶縁膜形成用組成物の製造方法、ポリマーの製造方法 |
WO2007119554A1 (ja) * | 2006-03-29 | 2007-10-25 | Jsr Corporation | ポリマーの製造方法、ポリマー、ポリマー膜形成用組成物、ポリマー膜の形成方法およびポリマー膜 |
JP4877486B2 (ja) * | 2006-05-31 | 2012-02-15 | Jsr株式会社 | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
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JP5170445B2 (ja) * | 2007-02-14 | 2013-03-27 | Jsr株式会社 | ケイ素含有膜形成用材料、ならびにケイ素含有絶縁膜およびその形成方法 |
WO2008114309A1 (ja) * | 2007-03-16 | 2008-09-25 | Fujitsu Limited | シリコン系絶縁膜のエッチング後処理剤、半導体装置の製造方法および半導体装置 |
US8026035B2 (en) * | 2007-03-30 | 2011-09-27 | Cheil Industries, Inc. | Etch-resistant disilane and saturated hydrocarbon bridged silicon-containing polymers, method of making the same, and method of using the same |
US20100261925A1 (en) * | 2007-07-10 | 2010-10-14 | Jsr Corporation | Method for producing silicon compound |
JP5348373B2 (ja) * | 2008-05-29 | 2013-11-20 | Jsr株式会社 | ポリカルボシランの製造方法 |
JP5365785B2 (ja) | 2008-05-30 | 2013-12-11 | Jsr株式会社 | 有機ケイ素化合物の製造方法 |
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JPWO2003087228A1 (ja) * | 2002-04-12 | 2005-08-18 | Azエレクトロニックマテリアルズ株式会社 | ケイ素含有共重合ポリマー組成物、溶剤可溶性架橋ケイ素含有共重合ポリマー及びこれらの硬化物 |
US6844568B2 (en) * | 2002-04-25 | 2005-01-18 | Kyocera Corporation | Photoelectric conversion device and manufacturing process thereof |
US6809041B2 (en) | 2002-07-01 | 2004-10-26 | Rensselaer Polytechnic Institute | Low dielectric constant films derived by sol-gel processing of a hyperbranched polycarbosilane |
KR20050024721A (ko) * | 2003-09-01 | 2005-03-11 | 삼성전자주식회사 | 신규 실록산계 수지 및 이를 이용한 반도체 층간 절연막 |
US7462678B2 (en) * | 2003-09-25 | 2008-12-09 | Jsr Corporation | Film forming composition, process for producing film forming composition, insulating film forming material, process for forming film, and silica-based film |
JP4737361B2 (ja) * | 2003-12-19 | 2011-07-27 | Jsr株式会社 | 絶縁膜およびその形成方法 |
WO2005068540A1 (ja) * | 2004-01-16 | 2005-07-28 | Jsr Corporation | 絶縁膜形成用組成物およびその製造方法、ならびにシリカ系絶縁膜およびその形成方法 |
TW200536621A (en) | 2004-01-16 | 2005-11-16 | Jsr Corp | Method for producing polymer, polymer, composition for forming insulating film, method for producing insulating film, and insulating film |
EP1615260A3 (en) * | 2004-07-09 | 2009-09-16 | JSR Corporation | Organic silicon-oxide-based film, composition and method for forming the same, and semiconductor device |
JP4355939B2 (ja) * | 2004-07-23 | 2009-11-04 | Jsr株式会社 | 半導体装置の絶縁膜形成用組成物およびシリカ系膜の形成方法 |
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2005
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- 2005-01-14 JP JP2005517076A patent/JP5013045B2/ja active Active
- 2005-01-14 EP EP05703612A patent/EP1705207B1/en not_active Not-in-force
- 2005-01-14 WO PCT/JP2005/000372 patent/WO2005068538A1/ja active Application Filing
- 2005-01-14 WO PCT/JP2005/000373 patent/WO2005068539A1/ja active Application Filing
- 2005-01-14 EP EP05703611A patent/EP1705206A4/en not_active Withdrawn
- 2005-01-14 KR KR1020067016327A patent/KR101129875B1/ko not_active IP Right Cessation
- 2005-01-14 JP JP2005517075A patent/JP5110243B2/ja active Active
- 2005-01-14 TW TW094101152A patent/TWI265172B/zh not_active IP Right Cessation
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Also Published As
Publication number | Publication date |
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WO2005068539A1 (ja) | 2005-07-28 |
JP5013045B2 (ja) | 2012-08-29 |
JPWO2005068539A1 (ja) | 2007-12-27 |
EP1705207A4 (en) | 2009-06-24 |
US20070021580A1 (en) | 2007-01-25 |
KR20060123548A (ko) | 2006-12-01 |
EP1705206A4 (en) | 2009-06-24 |
KR20060123549A (ko) | 2006-12-01 |
TW200536621A (en) | 2005-11-16 |
TW200538490A (en) | 2005-12-01 |
EP1705207B1 (en) | 2012-10-24 |
KR101129875B1 (ko) | 2012-03-28 |
US7528207B2 (en) | 2009-05-05 |
TWI292349B (zh) | 2008-01-11 |
US20070015892A1 (en) | 2007-01-18 |
WO2005068538A1 (ja) | 2005-07-28 |
EP1705206A1 (en) | 2006-09-27 |
JPWO2005068538A1 (ja) | 2007-12-27 |
JP5110243B2 (ja) | 2012-12-26 |
EP1705207A1 (en) | 2006-09-27 |
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