TWI308782B - Backside method and system for fabricating semiconductor components with conductive interconnects - Google Patents

Backside method and system for fabricating semiconductor components with conductive interconnects Download PDF

Info

Publication number
TWI308782B
TWI308782B TW095116361A TW95116361A TWI308782B TW I308782 B TWI308782 B TW I308782B TW 095116361 A TW095116361 A TW 095116361A TW 95116361 A TW95116361 A TW 95116361A TW I308782 B TWI308782 B TW I308782B
Authority
TW
Taiwan
Prior art keywords
substrate
semiconductor
contact
opening
semiconductor component
Prior art date
Application number
TW095116361A
Other languages
English (en)
Chinese (zh)
Other versions
TW200707603A (en
Inventor
Alan G Wood
William M Hiatt
David R Hembree
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Publication of TW200707603A publication Critical patent/TW200707603A/zh
Application granted granted Critical
Publication of TWI308782B publication Critical patent/TWI308782B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/20—Interconnections within wafers or substrates, e.g. through-silicon vias [TSV]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/40—Leadframes
    • H10W70/411—Chip-supporting parts, e.g. die pads
    • H10W70/415—Leadframe inner leads serving as die pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/077—Connecting of TAB connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/701—Tape-automated bond [TAB] connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/129—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed forming a chip-scale package [CSP]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7402—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7416—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7422—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to protect an active side of a device or wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/688—Flexible insulating substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01204—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using temporary auxiliary members, e.g. using sacrificial coatings or handle substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01223—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in liquid form, e.g. by dispensing droplets or by screen printing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01221—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition
    • H10W72/01225—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using local deposition in solid form, e.g. by using a powder or by stud bumping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01231—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps using blanket deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/012—Manufacture or treatment of bump connectors, dummy bumps or thermal bumps
    • H10W72/01251—Changing the shapes of bumps
    • H10W72/01255—Changing the shapes of bumps by using masks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/0711—Apparatus therefor
    • H10W72/07141—Means for applying energy, e.g. ovens or lasers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07234—Using a reflow oven
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/072—Connecting or disconnecting of bump connectors
    • H10W72/07231—Techniques
    • H10W72/07236—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07502—Connecting or disconnecting of bond wires using an auxiliary member
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07502—Connecting or disconnecting of bond wires using an auxiliary member
    • H10W72/07504—Connecting or disconnecting of bond wires using an auxiliary member the auxiliary member being temporary, e.g. a sacrificial coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/075—Connecting or disconnecting of bond wires
    • H10W72/07531—Techniques
    • H10W72/07532—Compression bonding, e.g. thermocompression bonding
    • H10W72/07533—Ultrasonic bonding, e.g. thermosonic bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/252—Materials comprising solid metals or solid metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/251—Materials
    • H10W72/253—Materials not comprising solid metals or solid metalloids, e.g. polymers or ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/29—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/533—Cross-sectional shape
    • H10W72/534—Cross-sectional shape being rectangular
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/536—Shapes of wire connectors the connected ends being ball-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/531—Shapes of wire connectors
    • H10W72/5363—Shapes of wire connectors the connected ends being wedge-shaped
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/541—Dispositions of bond wires
    • H10W72/5453—Dispositions of bond wires connecting between multiple bond pads on a chip, e.g. daisy chain
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5522—Materials of bond wires comprising metals or metalloids, e.g. silver comprising gold [Au]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5524—Materials of bond wires comprising metals or metalloids, e.g. silver comprising aluminium [Al]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/551—Materials of bond wires
    • H10W72/552—Materials of bond wires comprising metals or metalloids, e.g. silver
    • H10W72/5525—Materials of bond wires comprising metals or metalloids, e.g. silver comprising copper [Cu]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/50—Bond wires
    • H10W72/59—Bond pads specially adapted therefor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/932—Plan-view shape, i.e. in top view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/931—Shapes of bond pads
    • H10W72/934—Cross-sectional shape, i.e. in side view
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/9415—Dispositions of bond pads relative to the surface, e.g. recessed, protruding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/941—Dispositions of bond pads
    • H10W72/944—Dispositions of multiple bond pads
    • H10W72/9445—Top-view layouts, e.g. mirror arrays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/90—Bond pads, in general
    • H10W72/951—Materials of bond pads
    • H10W72/952—Materials of bond pads comprising metals or metalloids, e.g. PbSn, Ag or Cu
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/20—Configurations of stacked chips
    • H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/53187—Multiple station assembly apparatus
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/53—Means to assemble or disassemble
    • Y10T29/5313—Means to assemble electrical device
    • Y10T29/532—Conductor
    • Y10T29/53209—Terminal or connector

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Wire Bonding (AREA)
TW095116361A 2005-05-19 2006-05-09 Backside method and system for fabricating semiconductor components with conductive interconnects TWI308782B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/133,085 US7393770B2 (en) 2005-05-19 2005-05-19 Backside method for fabricating semiconductor components with conductive interconnects

Publications (2)

Publication Number Publication Date
TW200707603A TW200707603A (en) 2007-02-16
TWI308782B true TWI308782B (en) 2009-04-11

Family

ID=37431792

Family Applications (1)

Application Number Title Priority Date Filing Date
TW095116361A TWI308782B (en) 2005-05-19 2006-05-09 Backside method and system for fabricating semiconductor components with conductive interconnects

Country Status (6)

Country Link
US (6) US7393770B2 (https=)
EP (1) EP1889285B1 (https=)
JP (1) JP2008546174A (https=)
KR (1) KR100934090B1 (https=)
TW (1) TWI308782B (https=)
WO (1) WO2006124295A2 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545323A (zh) * 2012-07-11 2014-01-29 台湾积体电路制造股份有限公司 用于cis倒装芯片接合的互连结构及其形成方法
TWI643321B (zh) * 2016-10-04 2018-12-01 美商豪威科技股份有限公司 堆疊式影像感測器

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7371676B2 (en) * 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US7393770B2 (en) 2005-05-19 2008-07-01 Micron Technology, Inc. Backside method for fabricating semiconductor components with conductive interconnects
US7589406B2 (en) * 2005-06-27 2009-09-15 Micron Technology, Inc. Stacked semiconductor component
US7615476B2 (en) * 2005-06-30 2009-11-10 Intel Corporation Electromigration-resistant and compliant wire interconnects, nano-sized solder compositions, systems made thereof, and methods of assembling soldered packages
SG130061A1 (en) 2005-08-24 2007-03-20 Micron Technology Inc Microelectronic devices and microelectronic support devices, and associated assemblies and methods
US8153464B2 (en) * 2005-10-18 2012-04-10 International Rectifier Corporation Wafer singulation process
US7307348B2 (en) 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
US7659612B2 (en) 2006-04-24 2010-02-09 Micron Technology, Inc. Semiconductor components having encapsulated through wire interconnects (TWI)
US7538413B2 (en) 2006-12-28 2009-05-26 Micron Technology, Inc. Semiconductor components having through interconnects
US7928582B2 (en) * 2007-03-09 2011-04-19 Micron Technology, Inc. Microelectronic workpieces and methods for manufacturing microelectronic devices using such workpieces
US9000579B2 (en) * 2007-03-30 2015-04-07 Stats Chippac Ltd. Integrated circuit package system with bonding in via
SG148056A1 (en) 2007-05-17 2008-12-31 Micron Technology Inc Integrated circuit packages, methods of forming integrated circuit packages, and methods of assembling intgrated circuit packages
US7982137B2 (en) * 2007-06-27 2011-07-19 Hamilton Sundstrand Corporation Circuit board with an attached die and intermediate interposer
US7705440B2 (en) * 2007-09-07 2010-04-27 Freescale Semiconductor, Inc. Substrate having through-wafer vias and method of forming
JP4950012B2 (ja) * 2007-11-29 2012-06-13 力成科技股▲分▼有限公司 シリコンスルーホールを有する半導体チップ装置及びその製造方法
US8018065B2 (en) * 2008-02-28 2011-09-13 Atmel Corporation Wafer-level integrated circuit package with top and bottom side electrical connections
US20090243051A1 (en) * 2008-03-28 2009-10-01 Micron Technology, Inc. Integrated conductive shield for microelectronic device assemblies and associated methods
US8821794B2 (en) * 2008-03-31 2014-09-02 Nxp, B.V. Sensor chip and method of manufacturing the same
DE102008054077B4 (de) * 2008-10-31 2021-04-01 Globalfoundries Dresden Module One Limited Liability Company & Co. Kg Verfahren und Vorrichtung zur Herstellung von Bonddrähten auf der Grundlage mikroelektronischer Herstellungstechniken
US8362601B2 (en) * 2008-12-04 2013-01-29 Stats Chippac Ltd Wire-on-lead package system having leadfingers positioned between paddle extensions and method of manufacture thereof
US8168458B2 (en) * 2008-12-08 2012-05-01 Stats Chippac, Ltd. Semiconductor device and method of forming bond wires and stud bumps in recessed region of peripheral area around the device for electrical interconnection to other devices
US8357998B2 (en) * 2009-02-09 2013-01-22 Advanced Semiconductor Engineering, Inc. Wirebonded semiconductor package
US7816181B1 (en) 2009-06-30 2010-10-19 Sandisk Corporation Method of under-filling semiconductor die in a die stack and semiconductor device formed thereby
FR2954588B1 (fr) * 2009-12-23 2014-07-25 Commissariat Energie Atomique Procede d'assemblage d'au moins une puce avec un element filaire, puce electronique a element de liaison deformable, procede de fabrication d'une pluralite de puces, et assemblage d'au moins une puce avec un element filaire
US20110162701A1 (en) * 2010-01-03 2011-07-07 Claudio Truzzi Photovoltaic Cells
US20110192462A1 (en) * 2010-01-03 2011-08-11 Alchimer, S.A. Solar cells
TWI429043B (zh) 2010-04-26 2014-03-01 聯致科技股份有限公司 電路板結構、封裝結構與製作電路板的方法
US8742603B2 (en) 2010-05-20 2014-06-03 Qualcomm Incorporated Process for improving package warpage and connection reliability through use of a backside mold configuration (BSMC)
US8866267B2 (en) * 2010-05-28 2014-10-21 Alpha & Omega Semiconductor, Inc. Semiconductor device with substrate-side exposed device-side electrode and method of fabrication
US8987878B2 (en) 2010-10-29 2015-03-24 Alpha And Omega Semiconductor Incorporated Substrateless power device packages
KR20120026380A (ko) * 2010-09-09 2012-03-19 주식회사 하이닉스반도체 반도체 칩, 이를 포함하는 적층 칩 구조의 반도체 패키지 및 그 제조방법
US8210424B2 (en) 2010-09-16 2012-07-03 Hewlett-Packard Development Company, L.P. Soldering entities to a monolithic metallic sheet
CN102403242B (zh) * 2010-09-17 2013-06-26 中芯国际集成电路制造(上海)有限公司 一种在重新粘合过程中防止待测芯片损伤的方法
EP2624286B1 (en) * 2010-09-30 2020-11-11 Fuji Electric Co., Ltd. Method of manufacturing a semiconductor device
TWI441292B (zh) * 2011-03-02 2014-06-11 矽品精密工業股份有限公司 半導體結構及其製法
CN102832244B (zh) * 2011-06-13 2015-08-26 万国半导体股份有限公司 带有衬底端裸露的器件端电极的半导体器件及其制备方法
US8461676B2 (en) 2011-09-09 2013-06-11 Qualcomm Incorporated Soldering relief method and semiconductor device employing same
JP2013232756A (ja) * 2012-04-27 2013-11-14 Sony Corp 光学モジュール
US8907485B2 (en) 2012-08-24 2014-12-09 Freescale Semiconductor, Inc. Copper ball bond features and structure
US9123690B1 (en) 2012-10-18 2015-09-01 University Of South Florida Systems and methods for forming contact definitions
US8847412B2 (en) 2012-11-09 2014-09-30 Invensas Corporation Microelectronic assembly with thermally and electrically conductive underfill
KR101431918B1 (ko) 2012-12-31 2014-08-19 삼성전기주식회사 인쇄회로기판 및 인쇄회로기판의 표면처리방법
US20140306324A1 (en) * 2013-03-06 2014-10-16 Rf Micro Devices, Inc. Semiconductor device with a polymer substrate and methods of manufacturing the same
US9812350B2 (en) 2013-03-06 2017-11-07 Qorvo Us, Inc. Method of manufacture for a silicon-on-plastic semiconductor device with interfacial adhesion layer
US9583414B2 (en) 2013-10-31 2017-02-28 Qorvo Us, Inc. Silicon-on-plastic semiconductor device and method of making the same
US9214337B2 (en) 2013-03-06 2015-12-15 Rf Micro Devices, Inc. Patterned silicon-on-plastic (SOP) technology and methods of manufacturing the same
US9257763B2 (en) 2013-07-02 2016-02-09 Gyrus Acmi, Inc. Hybrid interconnect
US9510739B2 (en) 2013-07-12 2016-12-06 Gyrus Acmi, Inc. Endoscope small imaging system
US20150189204A1 (en) * 2013-12-27 2015-07-02 Optiz, Inc. Semiconductor Device On Cover Substrate And Method Of Making Same
US9653442B2 (en) * 2014-01-17 2017-05-16 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit package and methods of forming same
US9299736B2 (en) * 2014-03-28 2016-03-29 Taiwan Semiconductor Manufacturing Company, Ltd. Hybrid bonding with uniform pattern density
CN103943516A (zh) * 2014-04-14 2014-07-23 宁波芯健半导体有限公司 叠层芯片的晶圆级凸块圆片级封装方法
EP2996143B1 (en) 2014-09-12 2018-12-26 Qorvo US, Inc. Printed circuit module having semiconductor device with a polymer substrate and methods of manufacturing the same
US10085352B2 (en) 2014-10-01 2018-09-25 Qorvo Us, Inc. Method for manufacturing an integrated circuit package
US10121718B2 (en) 2014-11-03 2018-11-06 Qorvo Us, Inc. Printed circuit module having a semiconductor device with a protective layer in place of a low-resistivity handle layer
JP6663167B2 (ja) * 2015-03-18 2020-03-11 浜松ホトニクス株式会社 光検出装置
US9960145B2 (en) 2015-03-25 2018-05-01 Qorvo Us, Inc. Flip chip module with enhanced properties
US9613831B2 (en) 2015-03-25 2017-04-04 Qorvo Us, Inc. Encapsulated dies with enhanced thermal performance
US9627224B2 (en) * 2015-03-30 2017-04-18 Stmicroelectronics, Inc. Semiconductor device with sloped sidewall and related methods
US20160343604A1 (en) 2015-05-22 2016-11-24 Rf Micro Devices, Inc. Substrate structure with embedded layer for post-processing silicon handle elimination
US10276495B2 (en) 2015-09-11 2019-04-30 Qorvo Us, Inc. Backside semiconductor die trimming
GB201517273D0 (en) * 2015-09-30 2015-11-11 Univ Manchester Resist composition
US9659848B1 (en) * 2015-11-18 2017-05-23 Invensas Corporation Stiffened wires for offset BVA
US10020405B2 (en) 2016-01-19 2018-07-10 Qorvo Us, Inc. Microelectronics package with integrated sensors
US10062583B2 (en) 2016-05-09 2018-08-28 Qorvo Us, Inc. Microelectronics package with inductive element and magnetically enhanced mold compound component
US10784149B2 (en) 2016-05-20 2020-09-22 Qorvo Us, Inc. Air-cavity module with enhanced device isolation
US10773952B2 (en) 2016-05-20 2020-09-15 Qorvo Us, Inc. Wafer-level package with enhanced performance
US10103080B2 (en) 2016-06-10 2018-10-16 Qorvo Us, Inc. Thermally enhanced semiconductor package with thermal additive and process for making the same
US10079196B2 (en) 2016-07-18 2018-09-18 Qorvo Us, Inc. Thermally enhanced semiconductor package having field effect transistors with back-gate feature
US20180047692A1 (en) * 2016-08-10 2018-02-15 Amkor Technology, Inc. Method and System for Packing Optimization of Semiconductor Devices
JP7035014B2 (ja) 2016-08-12 2022-03-14 コーボ ユーエス，インコーポレイティド 性能が強化されたウェハレベルパッケージ
SG11201901194SA (en) 2016-08-12 2019-03-28 Qorvo Us Inc Wafer-level package with enhanced performance
US10486965B2 (en) 2016-08-12 2019-11-26 Qorvo Us, Inc. Wafer-level package with enhanced performance
US10109502B2 (en) 2016-09-12 2018-10-23 Qorvo Us, Inc. Semiconductor package with reduced parasitic coupling effects and process for making the same
US10090339B2 (en) 2016-10-21 2018-10-02 Qorvo Us, Inc. Radio frequency (RF) switch
US10749518B2 (en) 2016-11-18 2020-08-18 Qorvo Us, Inc. Stacked field-effect transistor switch
US10068831B2 (en) 2016-12-09 2018-09-04 Qorvo Us, Inc. Thermally enhanced semiconductor package and process for making the same
EP3355667A1 (de) * 2017-01-30 2018-08-01 Siemens Aktiengesellschaft Verfahren zur herstellung einer elektrischen schaltung und elektrische schaltung
US10490471B2 (en) 2017-07-06 2019-11-26 Qorvo Us, Inc. Wafer-level packaging for enhanced performance
US10600755B2 (en) * 2017-08-10 2020-03-24 Amkor Technology, Inc. Method of manufacturing an electronic device and electronic device manufactured thereby
US20190067232A1 (en) 2017-08-31 2019-02-28 Micron Technology, Inc. Method for Solder Bridging Elimination for Bulk Solder C2S Interconnects
US10366972B2 (en) 2017-09-05 2019-07-30 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US10784233B2 (en) 2017-09-05 2020-09-22 Qorvo Us, Inc. Microelectronics package with self-aligned stacked-die assembly
US11152363B2 (en) 2018-03-28 2021-10-19 Qorvo Us, Inc. Bulk CMOS devices with enhanced performance and methods of forming the same utilizing bulk CMOS process
US12062700B2 (en) 2018-04-04 2024-08-13 Qorvo Us, Inc. Gallium-nitride-based module with enhanced electrical performance and process for making the same
US12046505B2 (en) 2018-04-20 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same utilizing localized SOI formation
US10804246B2 (en) 2018-06-11 2020-10-13 Qorvo Us, Inc. Microelectronics package with vertically stacked dies
WO2020009759A1 (en) 2018-07-02 2020-01-09 Qorvo Us, Inc. Rf semiconductor device and manufacturing method thereof
US10964554B2 (en) 2018-10-10 2021-03-30 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US11069590B2 (en) 2018-10-10 2021-07-20 Qorvo Us, Inc. Wafer-level fan-out package with enhanced performance
US11646242B2 (en) 2018-11-29 2023-05-09 Qorvo Us, Inc. Thermally enhanced semiconductor package with at least one heat extractor and process for making the same
WO2020153983A1 (en) 2019-01-23 2020-07-30 Qorvo Us, Inc. Rf semiconductor device and manufacturing method thereof
US12057374B2 (en) 2019-01-23 2024-08-06 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11387157B2 (en) 2019-01-23 2022-07-12 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046483B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12125825B2 (en) 2019-01-23 2024-10-22 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US12046570B2 (en) 2019-01-23 2024-07-23 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
KR102591697B1 (ko) * 2019-03-06 2023-10-20 에스케이하이닉스 주식회사 하이브리드 와이어 본딩 구조를 포함한 스택 패키지
US12074086B2 (en) 2019-11-01 2024-08-27 Qorvo Us, Inc. RF devices with nanotube particles for enhanced performance and methods of forming the same
US11646289B2 (en) 2019-12-02 2023-05-09 Qorvo Us, Inc. RF devices with enhanced performance and methods of forming the same
US11923238B2 (en) 2019-12-12 2024-03-05 Qorvo Us, Inc. Method of forming RF devices with enhanced performance including attaching a wafer to a support carrier by a bonding technique without any polymer adhesive
US12129168B2 (en) 2019-12-23 2024-10-29 Qorvo Us, Inc. Microelectronics package with vertically stacked MEMS device and controller device
WO2022126016A2 (en) 2020-12-11 2022-06-16 Qorvo Us, Inc. Multi-level 3d stacked package and methods of forming the same
US12062571B2 (en) 2021-03-05 2024-08-13 Qorvo Us, Inc. Selective etching process for SiGe and doped epitaxial silicon
JP7703411B2 (ja) 2021-09-22 2025-07-07 キオクシア株式会社 半導体装置及び半導体装置の製造方法
JP2023141098A (ja) 2022-03-23 2023-10-05 キオクシア株式会社 半導体装置
US20240047424A1 (en) * 2022-08-08 2024-02-08 Micron Technology, Inc. Semiconductor dies including recesses for facilitating mechanical debonding, and associated systems and devices

Family Cites Families (158)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3761782A (en) * 1971-05-19 1973-09-25 Signetics Corp Semiconductor structure, assembly and method
US4394712A (en) * 1981-03-18 1983-07-19 General Electric Company Alignment-enhancing feed-through conductors for stackable silicon-on-sapphire wafers
US4348253A (en) 1981-11-12 1982-09-07 Rca Corporation Method for fabricating via holes in a semiconductor wafer
DE3406528A1 (de) 1984-02-23 1985-08-29 Brown, Boveri & Cie Ag, 6800 Mannheim Leistungshalbleitermodul
US5476211A (en) 1993-11-16 1995-12-19 Form Factor, Inc. Method of manufacturing electrical contacts, using a sacrificial member
US5917707A (en) 1993-11-16 1999-06-29 Formfactor, Inc. Flexible contact structure with an electrically conductive shell
US4807021A (en) 1986-03-10 1989-02-21 Kabushiki Kaisha Toshiba Semiconductor device having stacking structure
JPS62293658A (ja) * 1986-06-12 1987-12-21 Toshiba Corp 半導体装置
US4897708A (en) * 1986-07-17 1990-01-30 Laser Dynamics, Inc. Semiconductor wafer array
US4808273A (en) 1988-05-10 1989-02-28 Avantek, Inc. Method of forming completely metallized via holes in semiconductors
US5229647A (en) * 1991-03-27 1993-07-20 Micron Technology, Inc. High density data storage using stacked wafers
US5519332A (en) 1991-06-04 1996-05-21 Micron Technology, Inc. Carrier for testing an unpackaged semiconductor die
US5496775A (en) * 1992-07-15 1996-03-05 Micron Semiconductor, Inc. Semiconductor device having ball-bonded pads
US5824569A (en) * 1992-07-15 1998-10-20 Micron Technology, Inc. Semiconductor device having ball-bonded pads
US5432999A (en) * 1992-08-20 1995-07-18 Capps; David F. Integrated circuit lamination process
US5686352A (en) * 1993-07-26 1997-11-11 Motorola Inc. Method for making a tab semiconductor device with self-aligning cavity and intrinsic standoff
US5503285A (en) * 1993-07-26 1996-04-02 Litton Systems, Inc. Method for forming an electrostatically force balanced silicon accelerometer
US5483741A (en) * 1993-09-03 1996-01-16 Micron Technology, Inc. Method for fabricating a self limiting silicon based interconnect for testing bare semiconductor dice
WO1996016440A1 (en) * 1994-11-15 1996-05-30 Formfactor, Inc. Interconnection elements for microelectronic components
US6336269B1 (en) 1993-11-16 2002-01-08 Benjamin N. Eldridge Method of fabricating an interconnection element
US6835898B2 (en) 1993-11-16 2004-12-28 Formfactor, Inc. Electrical contact structures formed by configuring a flexible wire to have a springable shape and overcoating the wire with at least one layer of a resilient conductive material, methods of mounting the contact structures to electronic components, and applications for employing the contact structures
US5840199A (en) * 1994-06-01 1998-11-24 Litton Systems, Inc. Method for purging a multi-layer sacrificial etched silicon substrate
US5495667A (en) * 1994-11-07 1996-03-05 Micron Technology, Inc. Method for forming contact pins for semiconductor dice and interconnects
JPH08236586A (ja) 1994-12-29 1996-09-13 Nitto Denko Corp 半導体装置及びその製造方法
US5591649A (en) * 1995-01-19 1997-01-07 Texas Instruments Incorporated Process of removing a tape automated bonded semiconductor from bonded leads
JP3186941B2 (ja) * 1995-02-07 2001-07-11 シャープ株式会社 半導体チップおよびマルチチップ半導体モジュール
US5814889A (en) 1995-06-05 1998-09-29 Harris Corporation Intergrated circuit with coaxial isolation and method
US6013948A (en) * 1995-11-27 2000-01-11 Micron Technology, Inc. Stackable chip scale semiconductor package with mating contacts on opposed surfaces
US5674785A (en) * 1995-11-27 1997-10-07 Micron Technology, Inc. Method of producing a single piece package for semiconductor die
US6002177A (en) 1995-12-27 1999-12-14 International Business Machines Corporation High density integrated circuit packaging with chip stacking and via interconnections
US5809641A (en) 1996-04-25 1998-09-22 International Business Machines Corporation Method for printed circuit board repair
JPH09306955A (ja) * 1996-05-20 1997-11-28 Toppan Printing Co Ltd フィルムキャリアおよびその製造方法
DE69737599T2 (de) * 1996-09-13 2007-12-20 International Business Machines Corp. Integrierte nachgiebige sonde für waferprüfung und einbrennen
US6498074B2 (en) * 1996-10-29 2002-12-24 Tru-Si Technologies, Inc. Thinning and dicing of semiconductor wafers using dry etch, and obtaining semiconductor chips with rounded bottom edges and corners
WO1998019337A1 (en) * 1996-10-29 1998-05-07 Trusi Technologies, Llc Integrated circuits and methods for their fabrication
US5866949A (en) 1996-12-02 1999-02-02 Minnesota Mining And Manufacturing Company Chip scale ball grid array for integrated circuit packaging
US5894983A (en) 1997-01-09 1999-04-20 Harris Corporation High frequency, low temperature thermosonic ribbon bonding process for system-level applications
US5925384A (en) 1997-04-25 1999-07-20 Micron Technology, Inc. Manual pellet loader for Boschman automolds
US5793103A (en) 1997-05-08 1998-08-11 International Business Machines Corporation Insulated cube with exposed wire lead
US5950070A (en) * 1997-05-15 1999-09-07 Kulicke & Soffa Investments Method of forming a chip scale package, and a tool used in forming the chip scale package
US5931685A (en) * 1997-06-02 1999-08-03 Micron Technology, Inc. Interconnect for making temporary electrical connections with bumped semiconductor components
KR100211421B1 (ko) 1997-06-18 1999-08-02 윤종용 중앙부가 관통된 플렉서블 회로기판을 사용한 반도체 칩 패키지
US6040702A (en) 1997-07-03 2000-03-21 Micron Technology, Inc. Carrier and system for testing bumped semiconductor components
US6740960B1 (en) * 1997-10-31 2004-05-25 Micron Technology, Inc. Semiconductor package including flex circuit, interconnects and dense array external contacts
US6097087A (en) * 1997-10-31 2000-08-01 Micron Technology, Inc. Semiconductor package including flex circuit, interconnects and dense array external contacts
US6620731B1 (en) * 1997-12-18 2003-09-16 Micron Technology, Inc. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
US6833613B1 (en) * 1997-12-18 2004-12-21 Micron Technology, Inc. Stacked semiconductor package having laser machined contacts
US6107109A (en) * 1997-12-18 2000-08-22 Micron Technology, Inc. Method for fabricating a semiconductor interconnect with laser machined electrical paths through substrate
US6114240A (en) 1997-12-18 2000-09-05 Micron Technology, Inc. Method for fabricating semiconductor components using focused laser beam
US6105852A (en) * 1998-02-05 2000-08-22 International Business Machines Corporation Etched glass solder bump transfer for flip chip integrated circuit devices
US6253992B1 (en) * 1998-03-18 2001-07-03 Tessera, Inc. Solder ball placement fixtures and methods
JP3728918B2 (ja) * 1998-03-25 2005-12-21 セイコーエプソン株式会社 基板、基板の製造方法及び突起製造装置
US6222276B1 (en) 1998-04-07 2001-04-24 International Business Machines Corporation Through-chip conductors for low inductance chip-to-chip integration and off-chip connections
US6451624B1 (en) * 1998-06-05 2002-09-17 Micron Technology, Inc. Stackable semiconductor package having conductive layer and insulating layers and method of fabrication
US6100175A (en) * 1998-08-28 2000-08-08 Micron Technology, Inc. Method and apparatus for aligning and attaching balls to a substrate
US6268275B1 (en) * 1998-10-08 2001-07-31 Micron Technology, Inc. Method of locating conductive spheres utilizing screen and hopper of solder balls
DE19854743A1 (de) * 1998-11-27 2000-06-08 Sez Semiconduct Equip Zubehoer Vorrichtung zum Naßätzen einer Kante einer Halbleiterscheibe
FR2787241B1 (fr) * 1998-12-14 2003-01-31 Ela Medical Sa Composant microelectronique cms enrobe, notamment pour un dispositif medical implantable actif, et son procede de fabrication
KR100319609B1 (ko) * 1999-03-09 2002-01-05 김영환 와이어 어래이드 칩 사이즈 패키지 및 그 제조방법
JP2000294677A (ja) * 1999-04-05 2000-10-20 Fujitsu Ltd 高密度薄膜配線基板及びその製造方法
JP2000299334A (ja) 1999-04-14 2000-10-24 Apic Yamada Corp 樹脂封止装置
ATE211855T1 (de) * 1999-04-28 2002-01-15 Sez Semiconduct Equip Zubehoer Vorrichtung und verfahren zur flüssigkeitsbehandlung von scheibenförmigen gegenständen
DE19919716B4 (de) 1999-04-30 2005-11-03 Conti Temic Microelectronic Gmbh Mikroelektronische Baugruppe
US6617681B1 (en) * 1999-06-28 2003-09-09 Intel Corporation Interposer and method of making same
US6326689B1 (en) * 1999-07-26 2001-12-04 Stmicroelectronics, Inc. Backside contact for touchchip
JP2001044357A (ja) 1999-07-26 2001-02-16 Seiko Epson Corp 半導体装置およびその製造方法
JP3726579B2 (ja) * 1999-08-20 2005-12-14 セイコーエプソン株式会社 半導体装置およびその製造方法
JP3687435B2 (ja) * 1999-08-27 2005-08-24 セイコーエプソン株式会社 半導体チップおよびその製造方法、半導体装置、コンピュータ、回路基板ならびに電子機器
US6316287B1 (en) * 1999-09-13 2001-11-13 Vishay Intertechnology, Inc. Chip scale surface mount packages for semiconductor device and process of fabricating the same
JP3859403B2 (ja) 1999-09-22 2006-12-20 株式会社東芝 半導体装置及びその製造方法
JP2001135785A (ja) 1999-11-08 2001-05-18 Seiko Epson Corp 半導体チップ、マルチチップパッケージ、半導体装置、および電子機器、並びにこれらの製造方法
US20010052536A1 (en) * 1999-12-06 2001-12-20 Scherdorf Ronald Drost Method and apparatus for making an electrical device
US6380555B1 (en) * 1999-12-24 2002-04-30 Micron Technology, Inc. Bumped semiconductor component having test pads, and method and system for testing bumped semiconductor components
KR100324332B1 (ko) * 2000-01-04 2002-02-16 박종섭 솔더 조인트 신뢰성을 향상시킨 비지에이 반도체 패키지및 그 제조 방법
JP2001308122A (ja) * 2000-04-18 2001-11-02 Shinko Electric Ind Co Ltd 半導体装置の製造方法
US6638847B1 (en) * 2000-04-19 2003-10-28 Advanced Interconnect Technology Ltd. Method of forming lead-free bump interconnections
JP3292723B2 (ja) 2000-05-26 2002-06-17 アルス電子株式会社 半導体パッケージ及びその製造方法
JP3879816B2 (ja) 2000-06-02 2007-02-14 セイコーエプソン株式会社 半導体装置及びその製造方法、積層型半導体装置、回路基板並びに電子機器
US6717245B1 (en) 2000-06-02 2004-04-06 Micron Technology, Inc. Chip scale packages performed by wafer level processing
US6444576B1 (en) * 2000-06-16 2002-09-03 Chartered Semiconductor Manufacturing, Ltd. Three dimensional IC package module
JP3916854B2 (ja) 2000-06-28 2007-05-23 シャープ株式会社 配線基板、半導体装置およびパッケージスタック半導体装置
JP3951091B2 (ja) * 2000-08-04 2007-08-01 セイコーエプソン株式会社 半導体装置の製造方法
US6520844B2 (en) * 2000-08-04 2003-02-18 Sharp Kabushiki Kaisha Method of thinning semiconductor wafer capable of preventing its front from being contaminated and back grinding device for semiconductor wafers
JP2002076252A (ja) * 2000-08-31 2002-03-15 Nec Kyushu Ltd 半導体装置
US6577013B1 (en) * 2000-09-05 2003-06-10 Amkor Technology, Inc. Chip size semiconductor packages with stacked dies
JP2002107382A (ja) * 2000-09-27 2002-04-10 Asahi Kasei Corp 半導体装置およびその製造方法、並びに電流センサ
US7132741B1 (en) 2000-10-13 2006-11-07 Bridge Semiconductor Corporation Semiconductor chip assembly with carved bumped terminal
US6605551B2 (en) * 2000-12-08 2003-08-12 Intel Corporation Electrocoating process to form a dielectric layer in an organic substrate to reduce loop inductance
US20020074637A1 (en) * 2000-12-19 2002-06-20 Intel Corporation Stacked flip chip assemblies
US6653170B1 (en) 2001-02-06 2003-11-25 Charles W. C. Lin Semiconductor chip assembly with elongated wire ball bonded to chip and electrolessly plated to support circuit
JP2002270718A (ja) * 2001-03-07 2002-09-20 Seiko Epson Corp 配線基板及びその製造方法、半導体装置及びその製造方法、回路基板並びに電子機器
US6601888B2 (en) * 2001-03-19 2003-08-05 Creo Inc. Contactless handling of objects
US6680213B2 (en) 2001-04-02 2004-01-20 Micron Technology, Inc. Method and system for fabricating contacts on semiconductor components
US7108546B2 (en) * 2001-06-20 2006-09-19 Formfactor, Inc. High density planar electrical interface
US20030006493A1 (en) * 2001-07-04 2003-01-09 Matsushita Electric Industrial Co., Ltd. Semiconductor device and manufacturing method thereof
US20030049925A1 (en) 2001-09-10 2003-03-13 Layman Paul Arthur High-density inter-die interconnect structure
JP4014912B2 (ja) * 2001-09-28 2007-11-28 株式会社ルネサステクノロジ 半導体装置
JP4408598B2 (ja) 2001-09-28 2010-02-03 パナソニック株式会社 カード型記録媒体
US6727115B2 (en) 2001-10-31 2004-04-27 Hewlett-Packard Development Company, L.P. Back-side through-hole interconnection of a die to a substrate
US6611052B2 (en) * 2001-11-16 2003-08-26 Micron Technology, Inc. Wafer level stackable semiconductor package
CA2363409A1 (en) 2001-11-20 2003-05-20 Microbonds, Inc. A wire bonder for ball bonding insulated wire and method of using same
JP3778079B2 (ja) * 2001-12-20 2006-05-24 株式会社日立製作所 表示装置
KR100447869B1 (ko) * 2001-12-27 2004-09-08 삼성전자주식회사 다핀 적층 반도체 칩 패키지 및 이에 사용되는 리드 프레임
US6608370B1 (en) * 2002-01-28 2003-08-19 Motorola, Inc. Semiconductor wafer having a thin die and tethers and methods of making the same
US6908784B1 (en) * 2002-03-06 2005-06-21 Micron Technology, Inc. Method for fabricating encapsulated semiconductor components
US6846738B2 (en) 2002-03-13 2005-01-25 Micron Technology, Inc. High permeability composite films to reduce noise in high speed interconnects
US6712261B2 (en) 2002-03-20 2004-03-30 International Business Machines Corporation Solid conductive element insertion apparatus
US6848177B2 (en) * 2002-03-28 2005-02-01 Intel Corporation Integrated circuit die and an electronic assembly having a three-dimensional interconnection scheme
TWI232560B (en) * 2002-04-23 2005-05-11 Sanyo Electric Co Semiconductor device and its manufacture
US7340181B1 (en) * 2002-05-13 2008-03-04 National Semiconductor Corporation Electrical die contact structure and fabrication method
US7399683B2 (en) * 2002-06-18 2008-07-15 Sanyo Electric Co., Ltd. Manufacturing method of semiconductor device
SG111069A1 (en) 2002-06-18 2005-05-30 Micron Technology Inc Semiconductor devices including peripherally located bond pads, assemblies, packages, and methods
US6998334B2 (en) * 2002-07-08 2006-02-14 Micron Technology, Inc. Semiconductor devices with permanent polymer stencil and method for manufacturing the same
US6803303B1 (en) 2002-07-11 2004-10-12 Micron Technology, Inc. Method of fabricating semiconductor component having encapsulated, bonded, interconnect contacts
US6885107B2 (en) * 2002-08-29 2005-04-26 Micron Technology, Inc. Flip-chip image sensor packages and methods of fabrication
US6903442B2 (en) 2002-08-29 2005-06-07 Micron Technology, Inc. Semiconductor component having backside pin contacts
JP2004128063A (ja) 2002-09-30 2004-04-22 Toshiba Corp 半導体装置及びその製造方法
SG111972A1 (en) 2002-10-17 2005-06-29 Agency Science Tech & Res Wafer-level package for micro-electro-mechanical systems
JP3908146B2 (ja) * 2002-10-28 2007-04-25 シャープ株式会社 半導体装置及び積層型半導体装置
US6936913B2 (en) * 2002-12-11 2005-08-30 Northrop Grumman Corporation High performance vias for vertical IC packaging
US6756681B1 (en) * 2002-12-23 2004-06-29 Nokia Corporation Radio frequency integrated circuit having increased substrate resistance enabling three dimensional interconnection with feedthroughs
WO2004064159A1 (ja) * 2003-01-15 2004-07-29 Fujitsu Limited 半導体装置及び三次元実装半導体装置、並びに半導体装置の製造方法
US6824074B2 (en) * 2003-02-18 2004-11-30 Spraying Systems Co. Air assisted spray nozzle assembly for spraying viscous liquids
JP4544876B2 (ja) * 2003-02-25 2010-09-15 三洋電機株式会社 半導体装置の製造方法
US6982565B2 (en) 2003-03-06 2006-01-03 Micron Technology, Inc. Test system and test method with interconnect having semiconductor spring contacts
US6841883B1 (en) 2003-03-31 2005-01-11 Micron Technology, Inc. Multi-dice chip scale semiconductor components and wafer level methods of fabrication
TWI229890B (en) * 2003-04-24 2005-03-21 Sanyo Electric Co Semiconductor device and method of manufacturing same
JP3646720B2 (ja) * 2003-06-19 2005-05-11 セイコーエプソン株式会社 半導体装置及びその製造方法、回路基板並びに電子機器
TWI299551B (en) 2003-06-25 2008-08-01 Via Tech Inc Quad flat no-lead type chip carrier
JP2007528120A (ja) * 2003-07-03 2007-10-04 テッセラ テクノロジーズ ハンガリー コルラートルト フェレロェセーギュー タールシャシャーグ 集積回路装置をパッケージングする方法及び装置
US7042080B2 (en) * 2003-07-14 2006-05-09 Micron Technology, Inc. Semiconductor interconnect having compliant conductive contacts
US7180149B2 (en) * 2003-08-28 2007-02-20 Fujikura Ltd. Semiconductor package with through-hole
US20050095835A1 (en) * 2003-09-26 2005-05-05 Tessera, Inc. Structure and method of making capped chips having vertical interconnects
DE10356885B4 (de) * 2003-12-03 2005-11-03 Schott Ag Verfahren zum Gehäusen von Bauelementen und gehäustes Bauelement
JP4271590B2 (ja) * 2004-01-20 2009-06-03 新光電気工業株式会社 半導体装置及びその製造方法
JP4093186B2 (ja) 2004-01-27 2008-06-04 カシオ計算機株式会社 半導体装置の製造方法
US7129114B2 (en) * 2004-03-10 2006-10-31 Micron Technology, Inc. Methods relating to singulating semiconductor wafers and wafer scale assemblies
US20050205951A1 (en) * 2004-03-18 2005-09-22 Honeywell Internatioanl, Inc. Flip chip bonded micro-electromechanical system (MEMS) device
US20050263571A1 (en) * 2004-05-30 2005-12-01 Luc Belanger Injection molded continuously solidified solder method and apparatus
US7498647B2 (en) 2004-06-10 2009-03-03 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
SG145547A1 (en) 2004-07-23 2008-09-29 Micron Technology Inc Microelectronic component assemblies with recessed wire bonds and methods of making same
US7105918B2 (en) * 2004-07-29 2006-09-12 Micron Technology, Inc. Interposer with flexible solder pad elements and methods of manufacturing the same
JP2006074736A (ja) 2004-08-02 2006-03-16 Seiko Epson Corp 圧電発振器およびその製造方法
KR100604049B1 (ko) * 2004-09-01 2006-07-24 동부일렉트로닉스 주식회사 반도체 칩 패키지 및 그 제조방법
TWI234261B (en) * 2004-09-10 2005-06-11 Touch Micro System Tech Method of forming wafer backside interconnects
JP2006147911A (ja) 2004-11-22 2006-06-08 Renesas Technology Corp 半導体装置、半導体装置の製造方法、および電子装置
JP4528100B2 (ja) * 2004-11-25 2010-08-18 新光電気工業株式会社 半導体装置及びその製造方法
US7238999B2 (en) * 2005-01-21 2007-07-03 Honeywell International Inc. High performance MEMS packaging architecture
US20060170076A1 (en) * 2005-02-02 2006-08-03 Lsi Logic Corporation Apparatus, system, and method for reducing integrated circuit peeling
JP2006253330A (ja) 2005-03-09 2006-09-21 Sharp Corp 半導体装置およびその製造方法
US7371676B2 (en) 2005-04-08 2008-05-13 Micron Technology, Inc. Method for fabricating semiconductor components with through wire interconnects
US7393770B2 (en) 2005-05-19 2008-07-01 Micron Technology, Inc. Backside method for fabricating semiconductor components with conductive interconnects
US7589406B2 (en) 2005-06-27 2009-09-15 Micron Technology, Inc. Stacked semiconductor component
JP2007036104A (ja) * 2005-07-29 2007-02-08 Nec Electronics Corp 半導体装置およびその製造方法
US7307348B2 (en) 2005-12-07 2007-12-11 Micron Technology, Inc. Semiconductor components having through wire interconnects (TWI)
WO2007084849A1 (en) * 2006-01-18 2007-07-26 The General Hospital Corporation System and methods for generating data using one or more endoscopic microscopy techniques
US7659612B2 (en) 2006-04-24 2010-02-09 Micron Technology, Inc. Semiconductor components having encapsulated through wire interconnects (TWI)
KR100895813B1 (ko) * 2007-06-20 2009-05-06 주식회사 하이닉스반도체 반도체 패키지의 제조 방법

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103545323A (zh) * 2012-07-11 2014-01-29 台湾积体电路制造股份有限公司 用于cis倒装芯片接合的互连结构及其形成方法
CN108630716A (zh) * 2012-07-11 2018-10-09 台湾积体电路制造股份有限公司 用于cis倒装芯片接合的互连结构及其形成方法
CN108630716B (zh) * 2012-07-11 2021-12-14 台湾积体电路制造股份有限公司 用于cis倒装芯片接合的互连结构及其形成方法
TWI643321B (zh) * 2016-10-04 2018-12-01 美商豪威科技股份有限公司 堆疊式影像感測器

Also Published As

Publication number Publication date
JP2008546174A (ja) 2008-12-18
WO2006124295A3 (en) 2007-06-28
EP1889285A2 (en) 2008-02-20
US20080229573A1 (en) 2008-09-25
US7768096B2 (en) 2010-08-03
US20080206990A1 (en) 2008-08-28
EP1889285A4 (en) 2012-07-04
US7951702B2 (en) 2011-05-31
WO2006124295A2 (en) 2006-11-23
US7935991B2 (en) 2011-05-03
TW200707603A (en) 2007-02-16
US20110175223A1 (en) 2011-07-21
EP1889285B1 (en) 2019-12-04
US7393770B2 (en) 2008-07-01
US20080203539A1 (en) 2008-08-28
US20060261446A1 (en) 2006-11-23
US20100144139A1 (en) 2010-06-10
KR20070122239A (ko) 2007-12-28
US7727872B2 (en) 2010-06-01
US8546931B2 (en) 2013-10-01
KR100934090B1 (ko) 2009-12-24

Similar Documents

Publication Publication Date Title
TWI308782B (en) Backside method and system for fabricating semiconductor components with conductive interconnects
US7538413B2 (en) Semiconductor components having through interconnects
US9013044B2 (en) Through wire interconnect (TWI) for semiconductor components having wire in via and bonded connection with substrate contact
US8193035B2 (en) Fusible I/O interconnection systems and methods for flip-chip packaging involving substrate-mounted stud bumps
KR100921888B1 (ko) 관통 와이어 인터커넥트들을 갖는 반도체 컴포넌트들을제조하기 위한 방법 및 시스템
US8258006B2 (en) Method for fabricating stacked semiconductor components
Bigas et al. Bonding techniques for hybrid active pixel sensors (HAPS)