CN102403242B - 一种在重新粘合过程中防止待测芯片损伤的方法 - Google Patents
一种在重新粘合过程中防止待测芯片损伤的方法 Download PDFInfo
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- CN102403242B CN102403242B CN2010102857707A CN201010285770A CN102403242B CN 102403242 B CN102403242 B CN 102403242B CN 2010102857707 A CN2010102857707 A CN 2010102857707A CN 201010285770 A CN201010285770 A CN 201010285770A CN 102403242 B CN102403242 B CN 102403242B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45147—Copper (Cu) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/78—Apparatus for connecting with wire connectors
- H01L2224/7825—Means for applying energy, e.g. heating means
- H01L2224/783—Means for applying energy, e.g. heating means by means of pressure
- H01L2224/78301—Capillary
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/102—Material of the semiconductor or solid state bodies
- H01L2924/1025—Semiconducting materials
- H01L2924/10251—Elemental semiconductors, i.e. Group IV
- H01L2924/10253—Silicon [Si]
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Abstract
Description
Claims (11)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN2010102857707A CN102403242B (zh) | 2010-09-17 | 2010-09-17 | 一种在重新粘合过程中防止待测芯片损伤的方法 |
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CN2010102857707A CN102403242B (zh) | 2010-09-17 | 2010-09-17 | 一种在重新粘合过程中防止待测芯片损伤的方法 |
Publications (2)
Publication Number | Publication Date |
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CN102403242A CN102403242A (zh) | 2012-04-04 |
CN102403242B true CN102403242B (zh) | 2013-06-26 |
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CN2010102857707A Active CN102403242B (zh) | 2010-09-17 | 2010-09-17 | 一种在重新粘合过程中防止待测芯片损伤的方法 |
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Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
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CN104810243A (zh) * | 2014-01-24 | 2015-07-29 | 北大方正集团有限公司 | 一种封装器件解封方法 |
CN105334084B (zh) * | 2014-06-30 | 2018-06-12 | 无锡华润上华科技有限公司 | 集成电路芯片失效分析样品的制备方法 |
CN104897446B (zh) * | 2015-05-27 | 2017-08-22 | 上海华力微电子有限公司 | 一种基于动态电压衬度分析的样品制备方法 |
CN108987290B (zh) * | 2018-06-25 | 2020-09-22 | 南京矽邦半导体有限公司 | 一种qfn产品无损开盖方法 |
CN110146803A (zh) * | 2019-05-16 | 2019-08-20 | 长江存储科技有限责任公司 | 芯片样品及其获取方法、测试封装体及其形成方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5923954A (en) * | 1997-03-14 | 1999-07-13 | Lg Semicon Co., Ltd. | Ball grid array package and fabrication method therefor |
CN1338777A (zh) * | 2000-08-15 | 2002-03-06 | 联测科技股份有限公司 | 薄型半导体装置及其制备方法 |
CN1635364A (zh) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | 用于发光显微镜查找芯片缺陷的芯片固定装置 |
US7268421B1 (en) * | 2004-11-10 | 2007-09-11 | Bridge Semiconductor Corporation | Semiconductor chip assembly with welded metal pillar that includes enlarged ball bond |
CN101807531A (zh) * | 2010-03-30 | 2010-08-18 | 上海凯虹电子有限公司 | 一种超薄芯片的封装方法以及封装体 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
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TW504811B (en) * | 2001-10-12 | 2002-10-01 | Advanced Semiconductor Eng | Flip-chip packaging structure and the forming method |
US7393770B2 (en) * | 2005-05-19 | 2008-07-01 | Micron Technology, Inc. | Backside method for fabricating semiconductor components with conductive interconnects |
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2010
- 2010-09-17 CN CN2010102857707A patent/CN102403242B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5923954A (en) * | 1997-03-14 | 1999-07-13 | Lg Semicon Co., Ltd. | Ball grid array package and fabrication method therefor |
CN1338777A (zh) * | 2000-08-15 | 2002-03-06 | 联测科技股份有限公司 | 薄型半导体装置及其制备方法 |
CN1635364A (zh) * | 2003-12-30 | 2005-07-06 | 中芯国际集成电路制造(上海)有限公司 | 用于发光显微镜查找芯片缺陷的芯片固定装置 |
US7268421B1 (en) * | 2004-11-10 | 2007-09-11 | Bridge Semiconductor Corporation | Semiconductor chip assembly with welded metal pillar that includes enlarged ball bond |
CN101807531A (zh) * | 2010-03-30 | 2010-08-18 | 上海凯虹电子有限公司 | 一种超薄芯片的封装方法以及封装体 |
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