TWI267131B - Semiconductor element and semiconductor device using the same - Google Patents

Semiconductor element and semiconductor device using the same

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Publication number
TWI267131B
TWI267131B TW092104700A TW92104700A TWI267131B TW I267131 B TWI267131 B TW I267131B TW 092104700 A TW092104700 A TW 092104700A TW 92104700 A TW92104700 A TW 92104700A TW I267131 B TWI267131 B TW I267131B
Authority
TW
Taiwan
Prior art keywords
semiconductor region
crystalline semiconductor
linear
same
extends
Prior art date
Application number
TW092104700A
Other languages
English (en)
Other versions
TW200304178A (en
Inventor
Shunpei Yamazaki
Kiyoshi Kato
Atsuo Isobe
Hidekazu Miyairi
Hideomi Suzawa
Original Assignee
Semiconductor Energy Lab
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Lab filed Critical Semiconductor Energy Lab
Publication of TW200304178A publication Critical patent/TW200304178A/zh
Application granted granted Critical
Publication of TWI267131B publication Critical patent/TWI267131B/zh

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    • H—ELECTRICITY
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    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/127—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement
    • H01L27/1274—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor
    • H01L27/1281—Multistep manufacturing methods with a particular formation, treatment or patterning of the active layer specially adapted to the circuit arrangement using crystallisation of amorphous semiconductor or recrystallisation of crystalline semiconductor by using structural features to control crystal growth, e.g. placement of grain filters
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    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/04—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their crystalline structure, e.g. polycrystalline, cubic or particular orientation of crystalline planes
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    • H01L29/66409—Unipolar field-effect transistors
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    • H01L29/78618—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure
    • H01L29/78621—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with supplementary region or layer in the thin film or in the insulated bulk substrate supporting it for controlling or increasing the safety of the device characterised by the drain or the source properties, e.g. the doping structure, the composition, the sectional shape or the contact structure with LDD structure or an extension or an offset region or characterised by the doping profile
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    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
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    • H01L21/02612—Formation types
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    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
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    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
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    • H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
    • H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
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    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
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    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Optics & Photonics (AREA)
  • Recrystallisation Techniques (AREA)
  • Thin Film Transistor (AREA)
  • Bipolar Transistors (AREA)
TW092104700A 2002-03-05 2003-03-05 Semiconductor element and semiconductor device using the same TWI267131B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002059418 2002-03-05
JP2002118322 2002-04-19

Publications (2)

Publication Number Publication Date
TW200304178A TW200304178A (en) 2003-09-16
TWI267131B true TWI267131B (en) 2006-11-21

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW092104700A TWI267131B (en) 2002-03-05 2003-03-05 Semiconductor element and semiconductor device using the same

Country Status (4)

Country Link
US (1) US7705357B2 (zh)
KR (1) KR100979926B1 (zh)
CN (2) CN101217150B (zh)
TW (1) TWI267131B (zh)

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EP1326273B1 (en) 2001-12-28 2012-01-18 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US6933527B2 (en) * 2001-12-28 2005-08-23 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and semiconductor device production system
JP4011344B2 (ja) * 2001-12-28 2007-11-21 株式会社半導体エネルギー研究所 半導体装置の作製方法
US6841797B2 (en) * 2002-01-17 2005-01-11 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device formed over a surface with a drepession portion and a projection portion
US6884668B2 (en) * 2002-02-22 2005-04-26 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method therefor
US6847050B2 (en) * 2002-03-15 2005-01-25 Semiconductor Energy Laboratory Co., Ltd. Semiconductor element and semiconductor device comprising the same
US6930326B2 (en) 2002-03-26 2005-08-16 Semiconductor Energy Laboratory Co., Ltd. Semiconductor circuit and method of fabricating the same
TWI303882B (en) * 2002-03-26 2008-12-01 Semiconductor Energy Lab Semiconductor device and method of manufacturing the same
JP2006054073A (ja) * 2004-08-10 2006-02-23 Fujitsu Hitachi Plasma Display Ltd プラズマディスプレイパネルの製造方法
KR100666082B1 (ko) * 2005-04-01 2007-01-10 이근태 디젤엔진의 식물성 기름 가열장치
US7710739B2 (en) 2005-04-28 2010-05-04 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and display device
KR100745761B1 (ko) * 2006-02-07 2007-08-02 삼성전자주식회사 다이오드겸용 저항소자를 구비하는 상변화 램과 그 제조 및동작 방법
US8067772B2 (en) * 2006-12-05 2011-11-29 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
US7968884B2 (en) * 2006-12-05 2011-06-28 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and manufacturing method thereof
JP2008252068A (ja) * 2007-03-08 2008-10-16 Semiconductor Energy Lab Co Ltd 半導体装置及びその作製方法
JP5371144B2 (ja) 2007-06-29 2013-12-18 株式会社半導体エネルギー研究所 半導体装置及び半導体装置の作製方法、並びに電子機器
WO2009037101A1 (en) * 2007-09-21 2009-03-26 Total Petrochemicals Research Feluy Pipes for transporting water containing chlorine dioxide
JP4856252B2 (ja) * 2007-12-25 2012-01-18 株式会社アルバック 薄膜トランジスタの製造方法
TWI406106B (zh) * 2009-11-13 2013-08-21 Ind Tech Res Inst 以飛秒雷射製作多晶矽圖案的方法和系統
US8766337B2 (en) * 2009-11-27 2014-07-01 Sharp Kabushiki Kaisha Semiconductor device and method for manufacturing the same
TWI535028B (zh) * 2009-12-21 2016-05-21 半導體能源研究所股份有限公司 薄膜電晶體
KR101836067B1 (ko) * 2009-12-21 2018-03-08 가부시키가이샤 한도오따이 에네루기 켄큐쇼 박막 트랜지스터와 그 제작 방법
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CN101217150A (zh) 2008-07-09
TW200304178A (en) 2003-09-16
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CN1444285A (zh) 2003-09-24
US7705357B2 (en) 2010-04-27

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