TW200735415A - Electrode for semiconductor light emitting device - Google Patents

Electrode for semiconductor light emitting device

Info

Publication number
TW200735415A
TW200735415A TW095133087A TW95133087A TW200735415A TW 200735415 A TW200735415 A TW 200735415A TW 095133087 A TW095133087 A TW 095133087A TW 95133087 A TW95133087 A TW 95133087A TW 200735415 A TW200735415 A TW 200735415A
Authority
TW
Taiwan
Prior art keywords
light emitting
emitting device
electrode
semiconductor light
type
Prior art date
Application number
TW095133087A
Other languages
Chinese (zh)
Other versions
TWI319631B (en
Inventor
Hisayuki Miki
Original Assignee
Showa Denko Kk
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Showa Denko Kk filed Critical Showa Denko Kk
Publication of TW200735415A publication Critical patent/TW200735415A/en
Application granted granted Critical
Publication of TWI319631B publication Critical patent/TWI319631B/en

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  • Led Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN- based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.
TW95133087A 2005-09-08 2006-09-07 Electrode for semiconductor light emitting device TWI319631B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2005260146A JP2007073789A (en) 2005-09-08 2005-09-08 Electrodes for semiconductor light emitting device

Publications (2)

Publication Number Publication Date
TW200735415A true TW200735415A (en) 2007-09-16
TWI319631B TWI319631B (en) 2010-01-11

Family

ID=37934970

Family Applications (1)

Application Number Title Priority Date Filing Date
TW95133087A TWI319631B (en) 2005-09-08 2006-09-07 Electrode for semiconductor light emitting device

Country Status (2)

Country Link
JP (1) JP2007073789A (en)
TW (1) TWI319631B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5183247B2 (en) * 2008-02-25 2013-04-17 京セラ株式会社 Light emitting device
KR101449030B1 (en) * 2008-04-05 2014-10-08 엘지이노텍 주식회사 group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them
JP2010232649A (en) * 2009-03-06 2010-10-14 Showa Denko Kk Group-iii nitride semiconductor light-emitting element and method for manufacturing the same, and lamp
JP2012054525A (en) * 2010-08-04 2012-03-15 Toshiba Corp Semiconductor light-emitting device
JP5814968B2 (en) 2013-03-22 2015-11-17 株式会社東芝 Nitride semiconductor light emitting device
JP6070406B2 (en) * 2013-05-16 2017-02-01 日亜化学工業株式会社 Light emitting element
JP6476854B2 (en) * 2014-12-26 2019-03-06 日亜化学工業株式会社 Method for manufacturing light emitting device
JP2018049962A (en) * 2016-09-23 2018-03-29 泰谷光電科技股▲ふん▼有限公司 Electrode construction of light emission diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09232632A (en) * 1995-12-22 1997-09-05 Toshiba Corp Semiconductor light-emitting element and manufacture thereof
JP2001217456A (en) * 2000-02-03 2001-08-10 Sharp Corp Gallium nitride system compound semiconductor light- emitting device
US6380564B1 (en) * 2000-08-16 2002-04-30 United Epitaxy Company, Ltd. Semiconductor light emitting device
JP2003133590A (en) * 2001-10-25 2003-05-09 Sharp Corp Gallium nitride based compound semiconductor light emitting element and manufacturing method therefor
JP2004228401A (en) * 2003-01-24 2004-08-12 Sharp Corp Oxide semiconductor light emitting element and its manufacturing method

Also Published As

Publication number Publication date
JP2007073789A (en) 2007-03-22
TWI319631B (en) 2010-01-11

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