TW200735415A - Electrode for semiconductor light emitting device - Google Patents
Electrode for semiconductor light emitting deviceInfo
- Publication number
- TW200735415A TW200735415A TW095133087A TW95133087A TW200735415A TW 200735415 A TW200735415 A TW 200735415A TW 095133087 A TW095133087 A TW 095133087A TW 95133087 A TW95133087 A TW 95133087A TW 200735415 A TW200735415 A TW 200735415A
- Authority
- TW
- Taiwan
- Prior art keywords
- light emitting
- emitting device
- electrode
- semiconductor light
- type
- Prior art date
Links
Landscapes
- Led Devices (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
An object of the present invention is to provide an electrode that can produce powerful light emission with low driving voltage, without reducing crystallinity. The electrode for a semiconductor light emitting device has a structure with an n-type or p-type electrode and an opposing p-type or n-type electrode on the same side of the light emitting device. Both electrodes comprise a bonding pad and a transparent conductive layer. Preferably, the light emitting device is a GaN- based semiconductor light emitting device. The material of the transparent conductive layer is a metal oxide such as ITO, or a metal such as Al, Ni.
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005260146A JP2007073789A (en) | 2005-09-08 | 2005-09-08 | Electrodes for semiconductor light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
TW200735415A true TW200735415A (en) | 2007-09-16 |
TWI319631B TWI319631B (en) | 2010-01-11 |
Family
ID=37934970
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW95133087A TWI319631B (en) | 2005-09-08 | 2006-09-07 | Electrode for semiconductor light emitting device |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP2007073789A (en) |
TW (1) | TWI319631B (en) |
Families Citing this family (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5183247B2 (en) * | 2008-02-25 | 2013-04-17 | 京セラ株式会社 | Light emitting device |
KR101449030B1 (en) * | 2008-04-05 | 2014-10-08 | 엘지이노텍 주식회사 | group 3 nitride-based semiconductor light emitting diodes and methods to fabricate them |
JP2010232649A (en) * | 2009-03-06 | 2010-10-14 | Showa Denko Kk | Group-iii nitride semiconductor light-emitting element and method for manufacturing the same, and lamp |
JP2012054525A (en) * | 2010-08-04 | 2012-03-15 | Toshiba Corp | Semiconductor light-emitting device |
JP5814968B2 (en) | 2013-03-22 | 2015-11-17 | 株式会社東芝 | Nitride semiconductor light emitting device |
JP6070406B2 (en) * | 2013-05-16 | 2017-02-01 | 日亜化学工業株式会社 | Light emitting element |
JP6476854B2 (en) * | 2014-12-26 | 2019-03-06 | 日亜化学工業株式会社 | Method for manufacturing light emitting device |
JP2018049962A (en) * | 2016-09-23 | 2018-03-29 | 泰谷光電科技股▲ふん▼有限公司 | Electrode construction of light emission diode |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09232632A (en) * | 1995-12-22 | 1997-09-05 | Toshiba Corp | Semiconductor light-emitting element and manufacture thereof |
JP2001217456A (en) * | 2000-02-03 | 2001-08-10 | Sharp Corp | Gallium nitride system compound semiconductor light- emitting device |
US6380564B1 (en) * | 2000-08-16 | 2002-04-30 | United Epitaxy Company, Ltd. | Semiconductor light emitting device |
JP2003133590A (en) * | 2001-10-25 | 2003-05-09 | Sharp Corp | Gallium nitride based compound semiconductor light emitting element and manufacturing method therefor |
JP2004228401A (en) * | 2003-01-24 | 2004-08-12 | Sharp Corp | Oxide semiconductor light emitting element and its manufacturing method |
-
2005
- 2005-09-08 JP JP2005260146A patent/JP2007073789A/en active Pending
-
2006
- 2006-09-07 TW TW95133087A patent/TWI319631B/en active
Also Published As
Publication number | Publication date |
---|---|
JP2007073789A (en) | 2007-03-22 |
TWI319631B (en) | 2010-01-11 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
TW200735415A (en) | Electrode for semiconductor light emitting device | |
TW200625686A (en) | Semiconductor light-emitting device | |
TW200701508A (en) | A semiconductor light-emitting device | |
TW200737549A (en) | Gallium nitride-based compound semiconductor light-emitting device | |
TW200610200A (en) | Positive electrode for semiconductor light-emitting device | |
EP2388835A3 (en) | Electrode configuration for a light-emitting diode. | |
PH12020050115A1 (en) | Display device | |
TW200618349A (en) | Transparent electrode for semiconductor light-emitting device | |
TW201236138A (en) | Light emitting diode (LED) arrays including direct die attach and related assemblies | |
TW200618350A (en) | Light-emitting element, display device, and electronic appliance | |
TW200717846A (en) | Light emitting device and method of forming the same | |
TW200616261A (en) | Semiconductor light emitting device with protective element, and its manufacturing method | |
TW200717863A (en) | Gallium nitride-based compound semiconductor light-emitting device | |
JP2012256918A5 (en) | Nitride semiconductor light emitting device | |
WO2008112064A3 (en) | Light emitting devices having current reducing structures and methods of forming light emitting devices having current reducing structures | |
EP1821579A3 (en) | Light emitting element, light emitting device, and electronic appliance | |
EP2439793A3 (en) | Light emitting device and lighting instrument including the same | |
WO2009057241A1 (en) | Semiconductor light emitting element and semiconductor light emitting device using the same | |
EP3502852A3 (en) | Pixel structure and display panel | |
EP2280431A3 (en) | Light emitting device | |
CN202749409U (en) | Gallium nitride light emitting diode capable of enhancing electrode adhesive force | |
EP2448014A3 (en) | Semiconductor light emitting device | |
WO2012170281A3 (en) | Long wavelength light emitting devices with high quantum efficiencies | |
TW200514276A (en) | Light-emitting semiconductor device having enhanced brightness | |
WO2009069785A1 (en) | Light emitting element and illuminating apparatus |