TW550437B - Chemical amplification type negative-working resist composition for electron beams or X-rays - Google Patents

Chemical amplification type negative-working resist composition for electron beams or X-rays Download PDF

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Publication number
TW550437B
TW550437B TW089126445A TW89126445A TW550437B TW 550437 B TW550437 B TW 550437B TW 089126445 A TW089126445 A TW 089126445A TW 89126445 A TW89126445 A TW 89126445A TW 550437 B TW550437 B TW 550437B
Authority
TW
Taiwan
Prior art keywords
group
substituted
fluorine
acid
rays
Prior art date
Application number
TW089126445A
Other languages
English (en)
Chinese (zh)
Inventor
Yutaka Adegawa
Original Assignee
Fuji Photo Film Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Photo Film Co Ltd filed Critical Fuji Photo Film Co Ltd
Application granted granted Critical
Publication of TW550437B publication Critical patent/TW550437B/zh

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Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/039Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/038Macromolecular compounds which are rendered insoluble or differentially wettable
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • G03F7/0045Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055Radiation sensitive composition or product or process of making
    • Y10S430/106Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
TW089126445A 1999-12-16 2000-12-12 Chemical amplification type negative-working resist composition for electron beams or X-rays TW550437B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35802299A JP3989149B2 (ja) 1999-12-16 1999-12-16 電子線またはx線用化学増幅系ネガ型レジスト組成物

Publications (1)

Publication Number Publication Date
TW550437B true TW550437B (en) 2003-09-01

Family

ID=18457148

Family Applications (1)

Application Number Title Priority Date Filing Date
TW089126445A TW550437B (en) 1999-12-16 2000-12-12 Chemical amplification type negative-working resist composition for electron beams or X-rays

Country Status (5)

Country Link
US (1) US6528233B2 (enExample)
EP (1) EP1109066A1 (enExample)
JP (1) JP3989149B2 (enExample)
KR (1) KR100725118B1 (enExample)
TW (1) TW550437B (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381250B (zh) * 2005-11-28 2013-01-01 Shinetsu Chemical Co 光阻底層膜材料及圖型之形成方法
TWI395063B (zh) * 2006-07-24 2013-05-01 Shinetsu Chemical Co 負型光阻材料及使用其形成圖型之方法

Families Citing this family (32)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1193555A1 (en) * 2000-08-31 2002-04-03 Fuji Photo Film Co., Ltd. Negative resist composition
DE10058951A1 (de) * 2000-11-28 2002-06-20 Infineon Technologies Ag Verfahren zur Herstellung einer Lithographiemaske für eine integrierte Schaltung
JP4645789B2 (ja) * 2001-06-18 2011-03-09 Jsr株式会社 ネガ型感放射線性樹脂組成物
TW588218B (en) * 2001-08-21 2004-05-21 Fuji Photo Film Co Ltd Stimulation-sensitive composition and compound
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
US7244542B2 (en) * 2002-05-30 2007-07-17 Shipley Company, L.L.C. Resins and photoresist compositions comprising same
US7083892B2 (en) * 2002-06-28 2006-08-01 Fuji Photo Film Co., Ltd. Resist composition
JP4222850B2 (ja) 2003-02-10 2009-02-12 Spansion Japan株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
US7129016B2 (en) * 2004-11-12 2006-10-31 International Business Machines Corporation Positive resist containing naphthol functionality
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
WO2006096221A1 (en) * 2004-12-16 2006-09-14 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
WO2007049593A1 (ja) * 2005-10-25 2007-05-03 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法、重合性モノマー、および重合性モノマーの製造方法
JP5138199B2 (ja) * 2005-10-25 2013-02-06 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法
DE602007001356D1 (de) * 2006-03-14 2009-08-06 Fujifilm Corp Positive Resistzusammensetzung und Verfahren zur Strukturformung damit
JP4880523B2 (ja) * 2006-07-24 2012-02-22 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
JP5037919B2 (ja) * 2006-12-06 2012-10-03 三菱レイヨン株式会社 ビニルナフタレン化合物の精製方法
JP5339494B2 (ja) * 2007-01-15 2013-11-13 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5006055B2 (ja) * 2007-01-15 2012-08-22 三菱レイヨン株式会社 レジスト組成物および微細パターンが形成された基板の製造方法
JP5318350B2 (ja) * 2007-01-15 2013-10-16 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5006054B2 (ja) * 2007-01-15 2012-08-22 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5059419B2 (ja) * 2007-01-15 2012-10-24 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5416889B2 (ja) * 2007-06-08 2014-02-12 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、およびパターンが形成された基板の製造方法
JP5507113B2 (ja) * 2009-04-24 2014-05-28 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物および化合物
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
CN103554044A (zh) * 2013-10-21 2014-02-05 张家港顺昌化工有限公司 连续法制备六甲氧基甲基三聚氰胺树脂的连续制备方法
WO2016046659A1 (en) * 2014-09-25 2016-03-31 Basf Se Ether-based polymers as photo-crosslinkable dielectrics
JP6579428B2 (ja) * 2015-07-16 2019-09-25 川崎化成工業株式会社 置換オキシ−2−ナフチル(メタ)アクリレート化合物、その製造方法及びその用途
JP6743158B2 (ja) * 2016-09-26 2020-08-19 富士フイルム株式会社 レジスト組成物、パターン形成方法及び電子デバイスの製造方法
CN107494553B (zh) * 2017-09-11 2020-09-11 西华大学 一种没食子酸衍生的农用杀菌剂及用途
WO2019170481A1 (en) 2018-03-07 2019-09-12 Basf Se Patterning method for preparing top-gate, bottom-contact organic field effect transistors
KR102457044B1 (ko) * 2018-06-26 2022-10-21 주식회사 클랩 유전체로서의 비닐에테르계 고분자
JP7788806B2 (ja) * 2020-06-26 2025-12-19 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法

Family Cites Families (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3821584A1 (de) 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
JPH02150848A (ja) 1988-12-02 1990-06-11 Hitachi Ltd 光退色性放射線感応性組成物およびそれを用いたパターン形成法
US5128232A (en) 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
JP2500533B2 (ja) 1990-01-30 1996-05-29 和光純薬工業株式会社 新規なジアゾジスルホン化合物
DE4006190A1 (de) 1990-02-28 1991-08-29 Hoechst Ag Negativ arbeitendes strahlungsempfindliches gemisch und daraus hergestelltes strahlungsempfindliches aufzeichnungsmaterial
JP2973585B2 (ja) 1990-06-15 1999-11-08 三菱化学株式会社 ネガ型感光性組成物
JPH04291259A (ja) 1991-03-19 1992-10-15 Nippon Zeon Co Ltd レジスト組成物
JP2722870B2 (ja) 1991-06-14 1998-03-09 日本ゼオン株式会社 レジスト組成物
JPH04367864A (ja) 1991-06-14 1992-12-21 Nippon Zeon Co Ltd レジスト組成物
JPH0667431A (ja) 1992-08-20 1994-03-11 Sumitomo Chem Co Ltd ネガ型フォトレジスト組成物
JPH06236024A (ja) 1992-09-24 1994-08-23 Sumitomo Chem Co Ltd フォトレジスト組成物
JPH06199770A (ja) 1992-12-28 1994-07-19 Japan Synthetic Rubber Co Ltd 新規オニウム塩およびそれを含有する感放射線性樹脂 組成物
US5344742A (en) 1993-04-21 1994-09-06 Shipley Company Inc. Benzyl-substituted photoactive compounds and photoresist compositions comprising same
KR100194370B1 (ko) * 1993-04-28 1999-06-15 마에다 가쯔노스께 포지형 전자선 레지스트 조성물 및 포지형 전자선 레지스트용 현상액
JP2962145B2 (ja) 1994-05-16 1999-10-12 信越化学工業株式会社 ネガ型パターン形成材料
JP3424357B2 (ja) 1994-11-29 2003-07-07 住友化学工業株式会社 電子線用化学増幅ネガ型レジスト組成物
JP3330254B2 (ja) 1995-04-19 2002-09-30 東京応化工業株式会社 ネガ型レジスト組成物
JP3780569B2 (ja) 1996-06-20 2006-05-31 Jsr株式会社 KrFエキシマレーザー照射用化学増幅型ネガ型レジスト
JP3725624B2 (ja) * 1996-08-09 2005-12-14 富士写真フイルム株式会社 ネガ型平版印刷用版材及び製版方法
JP3798504B2 (ja) * 1997-04-21 2006-07-19 富士写真フイルム株式会社 ネガ型画像記録材料
US5866299A (en) * 1997-06-18 1999-02-02 Shipley Company, L.L.C. Negative photoresist composition

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI381250B (zh) * 2005-11-28 2013-01-01 Shinetsu Chemical Co 光阻底層膜材料及圖型之形成方法
TWI395063B (zh) * 2006-07-24 2013-05-01 Shinetsu Chemical Co 負型光阻材料及使用其形成圖型之方法

Also Published As

Publication number Publication date
US20010036590A1 (en) 2001-11-01
US6528233B2 (en) 2003-03-04
EP1109066A1 (en) 2001-06-20
JP3989149B2 (ja) 2007-10-10
KR100725118B1 (ko) 2007-06-04
KR20010062405A (ko) 2001-07-07
JP2001174995A (ja) 2001-06-29

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