KR100725118B1 - 전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물 - Google Patents

전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물 Download PDF

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Publication number
KR100725118B1
KR100725118B1 KR1020000076272A KR20000076272A KR100725118B1 KR 100725118 B1 KR100725118 B1 KR 100725118B1 KR 1020000076272 A KR1020000076272 A KR 1020000076272A KR 20000076272 A KR20000076272 A KR 20000076272A KR 100725118 B1 KR100725118 B1 KR 100725118B1
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South Korea
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group
fluorine atoms
acid
substituted
resist composition
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Korean (ko)
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KR20010062405A (ko
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아데가와유타카
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후지필름 가부시키가이샤
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

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  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
KR1020000076272A 1999-12-16 2000-12-14 전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물 Expired - Fee Related KR100725118B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP99-358022 1999-12-16
JP35802299A JP3989149B2 (ja) 1999-12-16 1999-12-16 電子線またはｘ線用化学増幅系ネガ型レジスト組成物

Publications (2)

Publication Number Publication Date
KR20010062405A KR20010062405A (ko) 2001-07-07
KR100725118B1 true KR100725118B1 (ko) 2007-06-04

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KR1020000076272A Expired - Fee Related KR100725118B1 (ko) 1999-12-16 2000-12-14 전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물

Country Status (5)

Country Link
US (1) US6528233B2 (enExample)
EP (1) EP1109066A1 (enExample)
JP (1) JP3989149B2 (enExample)
KR (1) KR100725118B1 (enExample)
TW (1) TW550437B (enExample)

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EP1193555A1 (en) * 2000-08-31 2002-04-03 Fuji Photo Film Co., Ltd. Negative resist composition
DE10058951A1 (de) * 2000-11-28 2002-06-20 Infineon Technologies Ag Verfahren zur Herstellung einer Lithographiemaske für eine integrierte Schaltung
JP4645789B2 (ja) * 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
TW588218B (en) * 2001-08-21 2004-05-21 Fuji Photo Film Co Ltd Stimulation-sensitive composition and compound
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
US7244542B2 (en) * 2002-05-30 2007-07-17 Shipley Company, L.L.C. Resins and photoresist compositions comprising same
US7083892B2 (en) * 2002-06-28 2006-08-01 Fuji Photo Film Co., Ltd. Resist composition
JP4222850B2 (ja) 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
US7129016B2 (en) * 2004-11-12 2006-10-31 International Business Machines Corporation Positive resist containing naphthol functionality
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
WO2006096221A1 (en) * 2004-12-16 2006-09-14 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
WO2007049593A1 (ja) * 2005-10-25 2007-05-03 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法、重合性モノマー、および重合性モノマーの製造方法
JP5138199B2 (ja) * 2005-10-25 2013-02-06 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法
JP4666166B2 (ja) * 2005-11-28 2011-04-06 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
DE602007001356D1 (de) * 2006-03-14 2009-08-06 Fujifilm Corp Positive Resistzusammensetzung und Verfahren zur Strukturformung damit
US7655378B2 (en) * 2006-07-24 2010-02-02 Shin-Etsu Chemical Co., Ltd. Negative resist composition and patterning process using the same
JP4880523B2 (ja) * 2006-07-24 2012-02-22 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
JP5037919B2 (ja) * 2006-12-06 2012-10-03 三菱レイヨン株式会社 ビニルナフタレン化合物の精製方法
JP5339494B2 (ja) * 2007-01-15 2013-11-13 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5006055B2 (ja) * 2007-01-15 2012-08-22 三菱レイヨン株式会社 レジスト組成物および微細パターンが形成された基板の製造方法
JP5318350B2 (ja) * 2007-01-15 2013-10-16 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5006054B2 (ja) * 2007-01-15 2012-08-22 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5059419B2 (ja) * 2007-01-15 2012-10-24 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5416889B2 (ja) * 2007-06-08 2014-02-12 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、およびパターンが形成された基板の製造方法
JP5507113B2 (ja) * 2009-04-24 2014-05-28 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物および化合物
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
CN103554044A (zh) * 2013-10-21 2014-02-05 张家港顺昌化工有限公司 连续法制备六甲氧基甲基三聚氰胺树脂的连续制备方法
WO2016046659A1 (en) * 2014-09-25 2016-03-31 Basf Se Ether-based polymers as photo-crosslinkable dielectrics
JP6579428B2 (ja) * 2015-07-16 2019-09-25 川崎化成工業株式会社 置換オキシ−２−ナフチル（メタ）アクリレート化合物、その製造方法及びその用途
JP6743158B2 (ja) * 2016-09-26 2020-08-19 富士フイルム株式会社 レジスト組成物、パターン形成方法及び電子デバイスの製造方法
CN107494553B (zh) * 2017-09-11 2020-09-11 西华大学 一种没食子酸衍生的农用杀菌剂及用途
WO2019170481A1 (en) 2018-03-07 2019-09-12 Basf Se Patterning method for preparing top-gate, bottom-contact organic field effect transistors
KR102457044B1 (ko) * 2018-06-26 2022-10-21 주식회사 클랩 유전체로서의 비닐에테르계 고분자
JP7788806B2 (ja) * 2020-06-26 2025-12-19 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法

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JPH1055066A (ja) * 1996-08-09 1998-02-24 Fuji Photo Film Co Ltd ネガ型画像記録材料
JPH10293401A (ja) * 1997-04-21 1998-11-04 Fuji Photo Film Co Ltd ネガ型画像記録材料
KR19990007041A (ko) * 1997-06-18 1999-01-25 마티네즈 길레모 네가티브 감광성 내식막 조성물

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DE3821584A1 (de) 1988-06-25 1989-12-28 Hoechst Ag Strahlungshaertbares gemisch und daraus hergestelltes strahlungsempfindliches aufzeichungsmaterial fuer hochenergetische strahlung
JPH02150848A (ja) 1988-12-02 1990-06-11 Hitachi Ltd 光退色性放射線感応性組成物およびそれを用いたパターン形成法
US5128232A (en) 1989-05-22 1992-07-07 Shiply Company Inc. Photoresist composition with copolymer binder having a major proportion of phenolic units and a minor proportion of non-aromatic cyclic alcoholic units
JP2500533B2 (ja) 1990-01-30 1996-05-29 和光純薬工業株式会社 新規なジアゾジスルホン化合物
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JPH04291259A (ja) 1991-03-19 1992-10-15 Nippon Zeon Co Ltd レジスト組成物
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JPH1055066A (ja) * 1996-08-09 1998-02-24 Fuji Photo Film Co Ltd ネガ型画像記録材料
JPH10293401A (ja) * 1997-04-21 1998-11-04 Fuji Photo Film Co Ltd ネガ型画像記録材料
KR19990007041A (ko) * 1997-06-18 1999-01-25 마티네즈 길레모 네가티브 감광성 내식막 조성물

Also Published As

Publication number Publication date
TW550437B (en) 2003-09-01
US20010036590A1 (en) 2001-11-01
US6528233B2 (en) 2003-03-04
EP1109066A1 (en) 2001-06-20
JP3989149B2 (ja) 2007-10-10
KR20010062405A (ko) 2001-07-07
JP2001174995A (ja) 2001-06-29

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