JP3989149B2 - 電子線またはｘ線用化学増幅系ネガ型レジスト組成物 - Google Patents

電子線またはｘ線用化学増幅系ネガ型レジスト組成物 Download PDF

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Publication number
JP3989149B2
JP3989149B2 JP35802299A JP35802299A JP3989149B2 JP 3989149 B2 JP3989149 B2 JP 3989149B2 JP 35802299 A JP35802299 A JP 35802299A JP 35802299 A JP35802299 A JP 35802299A JP 3989149 B2 JP3989149 B2 JP 3989149B2
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JP
Japan
Prior art keywords
group
fluorine atom
electron beam
resist composition
acid
Prior art date
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Expired - Fee Related
Application number
JP35802299A
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English (en)
Japanese (ja)
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JP2001174995A (ja
JP2001174995A5 (enExample
Inventor
豊 阿出川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujifilm Corp
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Fujifilm Corp
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Publication date
Application filed by Fujifilm Corp filed Critical Fujifilm Corp
Priority to JP35802299A priority Critical patent/JP3989149B2/ja
Priority to TW089126445A priority patent/TW550437B/zh
Priority to KR1020000076272A priority patent/KR100725118B1/ko
Priority to EP00127268A priority patent/EP1109066A1/en
Priority to US09/737,568 priority patent/US6528233B2/en
Publication of JP2001174995A publication Critical patent/JP2001174995A/ja
Publication of JP2001174995A5 publication Critical patent/JP2001174995A5/ja
Application granted granted Critical
Publication of JP3989149B2 publication Critical patent/JP3989149B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/1053—Imaging affecting physical property or radiation sensitive material, or producing nonplanar or printing surface - process, composition, or product: radiation sensitive composition or product or process of making binder containing
    • Y10S430/1055—Radiation sensitive composition or product or process of making
    • Y10S430/106—Binder containing

Landscapes

  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Addition Polymer Or Copolymer, Post-Treatments, Or Chemical Modifications (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Compositions Of Macromolecular Compounds (AREA)
JP35802299A 1999-12-16 1999-12-16 電子線またはｘ線用化学増幅系ネガ型レジスト組成物 Expired - Fee Related JP3989149B2 (ja)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP35802299A JP3989149B2 (ja) 1999-12-16 1999-12-16 電子線またはｘ線用化学増幅系ネガ型レジスト組成物
TW089126445A TW550437B (en) 1999-12-16 2000-12-12 Chemical amplification type negative-working resist composition for electron beams or X-rays
KR1020000076272A KR100725118B1 (ko) 1999-12-16 2000-12-14 전자선 또는 엑스선용 화학증폭계 네거티브 레지스트 조성물
EP00127268A EP1109066A1 (en) 1999-12-16 2000-12-18 Chemical amplification type negative-working resist composition for electron beams or x-rays
US09/737,568 US6528233B2 (en) 1999-12-16 2000-12-18 Chemical amplification type negative-working resist composition for electron beams or X-rays

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP35802299A JP3989149B2 (ja) 1999-12-16 1999-12-16 電子線またはｘ線用化学増幅系ネガ型レジスト組成物

Publications (3)

Publication Number Publication Date
JP2001174995A JP2001174995A (ja) 2001-06-29
JP2001174995A5 JP2001174995A5 (enExample) 2005-07-14
JP3989149B2 true JP3989149B2 (ja) 2007-10-10

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
JP35802299A Expired - Fee Related JP3989149B2 (ja) 1999-12-16 1999-12-16 電子線またはｘ線用化学増幅系ネガ型レジスト組成物

Country Status (5)

Country Link
US (1) US6528233B2 (enExample)
EP (1) EP1109066A1 (enExample)
JP (1) JP3989149B2 (enExample)
KR (1) KR100725118B1 (enExample)
TW (1) TW550437B (enExample)

Cited By (1)

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Publication number Priority date Publication date Assignee Title
WO2018056369A1 (ja) * 2016-09-26 2018-03-29 富士フイルム株式会社 レジスト組成物、パターン形成方法及び電子デバイスの製造方法

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EP1193555A1 (en) * 2000-08-31 2002-04-03 Fuji Photo Film Co., Ltd. Negative resist composition
DE10058951A1 (de) * 2000-11-28 2002-06-20 Infineon Technologies Ag Verfahren zur Herstellung einer Lithographiemaske für eine integrierte Schaltung
JP4645789B2 (ja) * 2001-06-18 2011-03-09 Ｊｓｒ株式会社 ネガ型感放射線性樹脂組成物
TW588218B (en) * 2001-08-21 2004-05-21 Fuji Photo Film Co Ltd Stimulation-sensitive composition and compound
US7521168B2 (en) * 2002-02-13 2009-04-21 Fujifilm Corporation Resist composition for electron beam, EUV or X-ray
US7244542B2 (en) * 2002-05-30 2007-07-17 Shipley Company, L.L.C. Resins and photoresist compositions comprising same
US7083892B2 (en) * 2002-06-28 2006-08-01 Fuji Photo Film Co., Ltd. Resist composition
JP4222850B2 (ja) 2003-02-10 2009-02-12 Ｓｐａｎｓｉｏｎ Ｊａｐａｎ株式会社 感放射線性樹脂組成物、その製造法並びにそれを用いた半導体装置の製造方法
US7129016B2 (en) * 2004-11-12 2006-10-31 International Business Machines Corporation Positive resist containing naphthol functionality
US7326523B2 (en) * 2004-12-16 2008-02-05 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
WO2006096221A1 (en) * 2004-12-16 2006-09-14 International Business Machines Corporation Low refractive index polymers as underlayers for silicon-containing photoresists
WO2007049593A1 (ja) * 2005-10-25 2007-05-03 Mitsubishi Rayon Co., Ltd. レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法、重合性モノマー、および重合性モノマーの製造方法
JP5138199B2 (ja) * 2005-10-25 2013-02-06 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、パターンが形成された基板の製造方法
JP4666166B2 (ja) * 2005-11-28 2011-04-06 信越化学工業株式会社 レジスト下層膜材料及びパターン形成方法
DE602007001356D1 (de) * 2006-03-14 2009-08-06 Fujifilm Corp Positive Resistzusammensetzung und Verfahren zur Strukturformung damit
US7655378B2 (en) * 2006-07-24 2010-02-02 Shin-Etsu Chemical Co., Ltd. Negative resist composition and patterning process using the same
JP4880523B2 (ja) * 2006-07-24 2012-02-22 信越化学工業株式会社 ネガ型レジスト材料及びこれを用いたパターン形成方法
JP5037919B2 (ja) * 2006-12-06 2012-10-03 三菱レイヨン株式会社 ビニルナフタレン化合物の精製方法
JP5339494B2 (ja) * 2007-01-15 2013-11-13 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5006055B2 (ja) * 2007-01-15 2012-08-22 三菱レイヨン株式会社 レジスト組成物および微細パターンが形成された基板の製造方法
JP5318350B2 (ja) * 2007-01-15 2013-10-16 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5006054B2 (ja) * 2007-01-15 2012-08-22 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5059419B2 (ja) * 2007-01-15 2012-10-24 三菱レイヨン株式会社 重合体、レジスト組成物及びパターンが形成された基板の製造方法
JP5416889B2 (ja) * 2007-06-08 2014-02-12 三菱レイヨン株式会社 レジスト用重合体、レジスト組成物、およびパターンが形成された基板の製造方法
JP5507113B2 (ja) * 2009-04-24 2014-05-28 東京応化工業株式会社 ポジ型レジスト組成物、レジストパターン形成方法、高分子化合物および化合物
JP5597616B2 (ja) * 2011-10-03 2014-10-01 富士フイルム株式会社 ネガ型化学増幅レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
CN103554044A (zh) * 2013-10-21 2014-02-05 张家港顺昌化工有限公司 连续法制备六甲氧基甲基三聚氰胺树脂的连续制备方法
WO2016046659A1 (en) * 2014-09-25 2016-03-31 Basf Se Ether-based polymers as photo-crosslinkable dielectrics
JP6579428B2 (ja) * 2015-07-16 2019-09-25 川崎化成工業株式会社 置換オキシ−２−ナフチル（メタ）アクリレート化合物、その製造方法及びその用途
CN107494553B (zh) * 2017-09-11 2020-09-11 西华大学 一种没食子酸衍生的农用杀菌剂及用途
WO2019170481A1 (en) 2018-03-07 2019-09-12 Basf Se Patterning method for preparing top-gate, bottom-contact organic field effect transistors
KR102457044B1 (ko) * 2018-06-26 2022-10-21 주식회사 클랩 유전체로서의 비닐에테르계 고분자
JP7788806B2 (ja) * 2020-06-26 2025-12-19 住友化学株式会社 化合物、樹脂、レジスト組成物及びレジストパターンの製造方法

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Cited By (4)

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Publication number Priority date Publication date Assignee Title
WO2018056369A1 (ja) * 2016-09-26 2018-03-29 富士フイルム株式会社 レジスト組成物、パターン形成方法及び電子デバイスの製造方法
KR20190052065A (ko) * 2016-09-26 2019-05-15 후지필름 가부시키가이샤 레지스트 조성물, 패턴 형성 방법 및 전자 디바이스의 제조 방법
JPWO2018056369A1 (ja) * 2016-09-26 2019-07-04 富士フイルム株式会社 レジスト組成物、パターン形成方法及び電子デバイスの製造方法
KR102243197B1 (ko) * 2016-09-26 2021-04-22 후지필름 가부시키가이샤 레지스트 조성물, 패턴 형성 방법 및 전자 디바이스의 제조 방법

Also Published As

Publication number Publication date
TW550437B (en) 2003-09-01
US20010036590A1 (en) 2001-11-01
US6528233B2 (en) 2003-03-04
EP1109066A1 (en) 2001-06-20
KR100725118B1 (ko) 2007-06-04
KR20010062405A (ko) 2001-07-07
JP2001174995A (ja) 2001-06-29

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