TW297158B - - Google Patents

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Publication number
TW297158B
TW297158B TW084103673A TW84103673A TW297158B TW 297158 B TW297158 B TW 297158B TW 084103673 A TW084103673 A TW 084103673A TW 84103673 A TW84103673 A TW 84103673A TW 297158 B TW297158 B TW 297158B
Authority
TW
Taiwan
Prior art keywords
film
layer
integrated circuit
semiconductor
mentioned
Prior art date
Application number
TW084103673A
Other languages
English (en)
Chinese (zh)
Original Assignee
Hitachi Ltd
Hitachicho Lsi Eng Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP11492594A external-priority patent/JP3404123B2/ja
Priority claimed from JP15316394A external-priority patent/JP3426711B2/ja
Application filed by Hitachi Ltd, Hitachicho Lsi Eng Co Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW297158B publication Critical patent/TW297158B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • G11C11/4125—Cells incorporating circuit means for protecting against loss of information
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B10/00—Static random access memory [SRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
    • H10D89/10—Integrated device layouts
    • H10W20/0698—
    • H10W20/496—
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/41—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger
    • G11C11/412—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming static cells with positive feedback, i.e. cells not needing refreshing or charge regeneration, e.g. bistable multivibrator or Schmitt trigger using field-effect transistors only
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S257/00—Active solid-state devices, e.g. transistors, solid-state diodes
    • Y10S257/903—FET configuration adapted for use as static memory cell
    • Y10S257/904—FET configuration adapted for use as static memory cell with passive components,, e.g. polysilicon resistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
TW084103673A 1994-05-27 1995-04-14 TW297158B (enExample)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP11492594A JP3404123B2 (ja) 1994-05-27 1994-05-27 半導体集積回路装置
JP15316394A JP3426711B2 (ja) 1994-07-05 1994-07-05 半導体集積回路装置およびその製造方法

Publications (1)

Publication Number Publication Date
TW297158B true TW297158B (enExample) 1997-02-01

Family

ID=26453568

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084103673A TW297158B (enExample) 1994-05-27 1995-04-14

Country Status (3)

Country Link
US (16) US5754467A (enExample)
KR (3) KR100344488B1 (enExample)
TW (1) TW297158B (enExample)

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Also Published As

Publication number Publication date
US7511377B2 (en) 2009-03-31
US20110076820A1 (en) 2011-03-31
KR100357336B1 (ko) 2002-10-19
US7049680B2 (en) 2006-05-23
US20090140349A1 (en) 2009-06-04
US20050082622A1 (en) 2005-04-21
US20110159653A1 (en) 2011-06-30
US20060160297A1 (en) 2006-07-20
US7253051B2 (en) 2007-08-07
US8133780B2 (en) 2012-03-13
US20030122159A1 (en) 2003-07-03
US20110156155A1 (en) 2011-06-30
US20050062077A1 (en) 2005-03-24
US20010019641A1 (en) 2001-09-06
US20080099854A1 (en) 2008-05-01
US6211004B1 (en) 2001-04-03
US5946565A (en) 1999-08-31
US20070241382A1 (en) 2007-10-18
US7397123B2 (en) 2008-07-08
KR950034797A (ko) 1995-12-28
US20040264274A1 (en) 2004-12-30
US7834420B2 (en) 2010-11-16
US7022568B2 (en) 2006-04-04
US5754467A (en) 1998-05-19
US20080073726A1 (en) 2008-03-27
US8093681B2 (en) 2012-01-10
US7023071B2 (en) 2006-04-04
US6809399B2 (en) 2004-10-26
KR100357335B1 (ko) 2002-10-19
US7456486B2 (en) 2008-11-25
US6548885B2 (en) 2003-04-15
US7910427B1 (en) 2011-03-22
KR100344488B1 (ko) 2002-11-23

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