TW280912B - - Google Patents

Info

Publication number
TW280912B
TW280912B TW084102472A TW84102472A TW280912B TW 280912 B TW280912 B TW 280912B TW 084102472 A TW084102472 A TW 084102472A TW 84102472 A TW84102472 A TW 84102472A TW 280912 B TW280912 B TW 280912B
Authority
TW
Taiwan
Application number
TW084102472A
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW280912B publication Critical patent/TW280912B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C5/00—Details of stores covered by group G11C11/00
    • G11C5/14—Power supply arrangements, e.g. power down, chip selection or deselection, layout of wirings or power grids, or multiple supply levels
    • G11C5/147—Voltage reference generators, voltage or current regulators; Internally lowered supply levels; Compensation for voltage drops

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Read Only Memory (AREA)
TW084102472A 1994-03-11 1995-03-15 TW280912B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP04093594A JP3737525B2 (ja) 1994-03-11 1994-03-11 半導体記憶装置

Publications (1)

Publication Number Publication Date
TW280912B true TW280912B (zh) 1996-07-11

Family

ID=12594367

Family Applications (1)

Application Number Title Priority Date Filing Date
TW084102472A TW280912B (zh) 1994-03-11 1995-03-15

Country Status (4)

Country Link
US (2) US5784315A (zh)
JP (1) JP3737525B2 (zh)
KR (1) KR0159455B1 (zh)
TW (1) TW280912B (zh)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI657446B (zh) * 2018-05-29 2019-04-21 華邦電子股份有限公司 電阻式記憶體及寫入方法
CN110660432A (zh) * 2018-06-29 2020-01-07 华邦电子股份有限公司 电阻式存储器及写入方法
US10636486B1 (en) 2019-03-26 2020-04-28 Winbond Electronics Corp. Resistive memory and control method thereof

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US7395466B2 (en) * 2005-12-30 2008-07-01 Intel Corporation Method and apparatus to adjust voltage for storage location reliability
JP4901348B2 (ja) * 2006-07-20 2012-03-21 株式会社東芝 半導体記憶装置およびその制御方法
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JP4921953B2 (ja) * 2006-12-25 2012-04-25 株式会社東芝 半導体集積回路装置及び半導体記憶装置のテスト方法
KR100843037B1 (ko) * 2007-03-27 2008-07-01 주식회사 하이닉스반도체 플래시 메모리 장치 및 이의 소거 방법
US8031521B1 (en) * 2008-05-20 2011-10-04 Marvell International Ltd. Reprogramming non-volatile memory devices for read disturbance mitigation
KR100953045B1 (ko) * 2008-05-23 2010-04-14 주식회사 하이닉스반도체 불휘발성 메모리 장치의 프로그램 방법
KR101464255B1 (ko) * 2008-06-23 2014-11-25 삼성전자주식회사 플래시 메모리 장치 및 그것을 포함한 시스템
KR100996108B1 (ko) * 2009-01-21 2010-11-22 주식회사 하이닉스반도체 불휘발성 메모리 장치의 프로그램 방법
JP2010176750A (ja) * 2009-01-29 2010-08-12 Oki Semiconductor Co Ltd 不揮発性半導体メモリ及びそのリーク不良検出方法
JP5426250B2 (ja) * 2009-06-26 2014-02-26 三星電子株式会社 不揮発性半導体メモリの放電回路
JP2012027969A (ja) * 2010-07-21 2012-02-09 Toshiba Corp 不揮発性半導体記憶装置
JP7082473B2 (ja) * 2017-11-09 2022-06-08 ローム株式会社 半導体記憶装置
TWI714267B (zh) * 2019-09-18 2020-12-21 華邦電子股份有限公司 非揮發性記憶體及其資料寫入方法
CN112634962B (zh) * 2019-10-08 2023-12-08 华邦电子股份有限公司 非易失性存储器及其数据写入方法

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Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI657446B (zh) * 2018-05-29 2019-04-21 華邦電子股份有限公司 電阻式記憶體及寫入方法
US11055021B2 (en) 2018-05-29 2021-07-06 Winbond Electronics Corp. Resistive memory
US11520526B2 (en) 2018-05-29 2022-12-06 Winbond Electronics Corp. Write method for resistive memory
CN110660432A (zh) * 2018-06-29 2020-01-07 华邦电子股份有限公司 电阻式存储器及写入方法
CN110660432B (zh) * 2018-06-29 2021-07-30 华邦电子股份有限公司 电阻式存储器及写入方法
US10636486B1 (en) 2019-03-26 2020-04-28 Winbond Electronics Corp. Resistive memory and control method thereof

Also Published As

Publication number Publication date
US6016274A (en) 2000-01-18
KR0159455B1 (ko) 1999-02-01
JPH07249294A (ja) 1995-09-26
JP3737525B2 (ja) 2006-01-18
US5784315A (en) 1998-07-21

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