TW201107241A - Copper zinc tin chalcogenide nanoparticles - Google Patents

Copper zinc tin chalcogenide nanoparticles Download PDF

Info

Publication number
TW201107241A
TW201107241A TW99116394A TW99116394A TW201107241A TW 201107241 A TW201107241 A TW 201107241A TW 99116394 A TW99116394 A TW 99116394A TW 99116394 A TW99116394 A TW 99116394A TW 201107241 A TW201107241 A TW 201107241A
Authority
TW
Taiwan
Prior art keywords
film
group
nanoparticle
tin
zinc
Prior art date
Application number
TW99116394A
Other languages
English (en)
Chinese (zh)
Inventor
Daniela Rodica Radu
Jonathan V Caspar
Lynda Kaye Johnson
H David Rosenfeld
Irina Malajovich
Mei-Jin Lu
Original Assignee
Du Pont
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Du Pont filed Critical Du Pont
Publication of TW201107241A publication Critical patent/TW201107241A/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/006—Coating of the granules without description of the process or the device by which the granules are obtained
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B19/00—Selenium; Tellurium; Compounds thereof
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G19/00—Compounds of tin
    • C01G19/006—Compounds containing tin, with or without oxygen or hydrogen, and containing two or more other elements
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/04—Pretreatment of the material to be coated
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3428—Sulfides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
    • H10P14/3431—Selenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00—Crystal-structural characteristics
    • C01P2002/70—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72—Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/01—Particle morphology depicted by an image
    • C01P2004/04—Particle morphology depicted by an image obtained by TEM, STEM, STM or AFM
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/62—Submicrometer sized, i.e. from 0.1-1 micrometer
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/60—Particles characterised by their size
    • C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Nanotechnology (AREA)
  • Wood Science & Technology (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Composite Materials (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacturing & Machinery (AREA)
TW99116394A 2009-05-21 2010-05-21 Copper zinc tin chalcogenide nanoparticles TW201107241A (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US18018109P 2009-05-21 2009-05-21
US18018409P 2009-05-21 2009-05-21
US18018609P 2009-05-21 2009-05-21
US18017909P 2009-05-21 2009-05-21

Publications (1)

Publication Number Publication Date
TW201107241A true TW201107241A (en) 2011-03-01

Family

ID=42797237

Family Applications (1)

Application Number Title Priority Date Filing Date
TW99116394A TW201107241A (en) 2009-05-21 2010-05-21 Copper zinc tin chalcogenide nanoparticles

Country Status (7)

Country Link
US (2) US9112094B2 (https=)
EP (3) EP2432840A1 (https=)
JP (3) JP2012527523A (https=)
KR (3) KR20120030434A (https=)
CN (3) CN102439098A (https=)
TW (1) TW201107241A (https=)
WO (3) WO2010135622A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8771555B2 (en) 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
US8828767B2 (en) 2011-12-30 2014-09-09 Industrial Technology Research Institute Fabriation method for light absorption layer of solar cell

Families Citing this family (97)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2010254120A1 (en) * 2009-05-26 2012-01-12 Purdue Research Foundation Synthesis of multinary chalcogenide nanoparticles comprising Cu, Zn, Sn, S, and Se
US8277894B2 (en) * 2009-07-16 2012-10-02 Rohm And Haas Electronic Materials Llc Selenium ink and methods of making and using same
US8308973B2 (en) * 2009-07-27 2012-11-13 Rohm And Haas Electronic Materials Llc Dichalcogenide selenium ink and methods of making and using same
US20110094557A1 (en) 2009-10-27 2011-04-28 International Business Machines Corporation Method of forming semiconductor film and photovoltaic device including the film
US10147604B2 (en) 2009-10-27 2018-12-04 International Business Machines Corporation Aqueous-based method of forming semiconductor film and photovoltaic device including the film
US8119506B2 (en) * 2010-05-18 2012-02-21 Rohm And Haas Electronic Materials Llc Group 6a/group 3a ink and methods of making and using same
WO2011146115A1 (en) 2010-05-21 2011-11-24 Heliovolt Corporation Liquid precursor for deposition of copper selenide and method of preparing the same
WO2012023973A2 (en) 2010-08-16 2012-02-23 Heliovolt Corporation Liquid precursor for deposition of indium selenide and method of preparing the same
US8426241B2 (en) 2010-09-09 2013-04-23 International Business Machines Corporation Structure and method of fabricating a CZTS photovoltaic device by electrodeposition
JP6064314B2 (ja) * 2010-11-29 2017-01-25 株式会社リコー 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法
JP5278778B2 (ja) * 2011-01-18 2013-09-04 株式会社豊田中央研究所 カルコゲナイト系化合物半導体及びその製造方法
US20140216555A1 (en) * 2011-01-21 2014-08-07 Regents Of The University Of Minnesota Metal chalcogenides and methods of making and using same
WO2012106532A2 (en) * 2011-02-02 2012-08-09 Advenira, Inc. Solution derived nanocomposite precursor solutions, methods for making thin films and thin films made by such methods
US10131793B2 (en) 2011-02-02 2018-11-20 Advenira Enterprises, Inc. Modified hybrid sol-gel solutions and compositions formed from such solutions
WO2012112491A1 (en) * 2011-02-15 2012-08-23 Purdue Research Foundation Nanostructured copper zinc tin sulfide-based thermoelectric energy conversion
CN103650155B (zh) * 2011-02-18 2016-10-12 华盛顿大学商业中心 形成包括i2-ii-iv-vi4和i2-(ii,iv)-iv-vi4半导体膜在内的半导体膜的方法以及包括所述半导体膜的电子装置
US8739728B2 (en) * 2011-04-07 2014-06-03 Dynamic Micro Systems, Semiconductor Equipment Gmbh Methods and apparatuses for roll-on coating
US8501526B2 (en) 2011-04-22 2013-08-06 Alliance For Sustainable Energy, Llc Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species
CN103502144B (zh) * 2011-04-28 2015-11-25 Lg化学株式会社 化合物半导体及其用途
CN103492310A (zh) * 2011-04-28 2014-01-01 Lg化学株式会社 新的化合物半导体及其用途
WO2012157904A1 (ko) * 2011-05-13 2012-11-22 주식회사 엘지화학 신규한 화합물 반도체 및 그 활용
JP5767399B2 (ja) * 2011-05-13 2015-08-19 エルジー・ケム・リミテッド 新規な化合物半導体及びその活用
CN103517871B (zh) * 2011-05-13 2015-08-19 Lg化学株式会社 化合物半导体及其用途
EP2708502B1 (en) * 2011-05-13 2017-07-26 LG Chem, Ltd. Novel compound semiconductor and usage for same
JP5788832B2 (ja) * 2011-06-06 2015-10-07 トヨタ自動車株式会社 ソルボサーマル法を用いるＣｕ，Ｚｎ，Ｓｎ及びＳを含有する硫化物系化合物半導体ナノ粒子の製造方法
WO2013015745A1 (en) * 2011-07-25 2013-01-31 Nanyang Technological University Cu-zn-sn-s/se thin film and methods of forming the same
JP5922348B2 (ja) * 2011-07-25 2016-05-24 京セラ株式会社 半導体層の製造方法、光電変換装置の製造方法および半導体層形成用液
JP5536153B2 (ja) * 2011-09-16 2014-07-02 新日光能源科技股▲ふん▼有限公司 カルコゲナイド半導体膜の形成方法及び光起電力装置
CN103842289A (zh) * 2011-09-30 2014-06-04 凸版印刷株式会社 化合物半导体薄膜形成用油墨及其制造方法
KR101311030B1 (ko) * 2011-11-24 2013-09-24 연세대학교 산학협력단 Ｃｚｔｓ 박막용 하이브리드 잉크
JP2013115235A (ja) * 2011-11-29 2013-06-10 Toyota Central R&D Labs Inc 光電素子及びその製造方法
JP5776993B2 (ja) * 2011-11-30 2015-09-09 株式会社村田製作所 化合物半導体超微粒子の製造方法
WO2013091114A1 (en) * 2011-12-22 2013-06-27 The University Of Western Ontario Copper-containing nanocrystals and methods of preparation therefor
JP2013136481A (ja) * 2011-12-28 2013-07-11 Toyota Motor Corp Ｃｚｔｓ系化合物半導体及び光電変換素子
US20130217211A1 (en) * 2012-02-21 2013-08-22 Aqt Solar, Inc. Controlled-Pressure Process for Production of CZTS Thin-Films
WO2013125818A1 (ko) * 2012-02-24 2013-08-29 영남대학교 산학협력단 태양 전지 제조 장치 및 태양 전지 제조 방법
JP5752624B2 (ja) * 2012-03-09 2015-07-22 トヨタ自動車株式会社 Ｃｚｔｓ化合物半導体の製造方法
EP2647675A2 (en) * 2012-04-02 2013-10-09 Neo Solar Power Corp. Method for forming an ink
EP2647595A2 (en) * 2012-04-03 2013-10-09 Neo Solar Power Corp. Ink composition, chalcogenide semiconductor film, photovoltaic device and methods for forming the same
KR101298026B1 (ko) * 2012-04-13 2013-08-26 한국화학연구원 태양전지 광활성층의 제조방법
US8586457B1 (en) * 2012-05-17 2013-11-19 Intermolecular, Inc. Method of fabricating high efficiency CIGS solar cells
US9105797B2 (en) 2012-05-31 2015-08-11 Alliance For Sustainable Energy, Llc Liquid precursor inks for deposition of In—Se, Ga—Se and In—Ga—Se
ES2523141T3 (es) * 2012-06-14 2014-11-21 Suntricity Cells Corporation Solución de precursor para formar una película delgada de semiconductor a base de CIS, CIGS o CZTS
TWI586773B (zh) * 2012-07-26 2017-06-11 東京應化工業股份有限公司 光吸收層形成用塗佈液之製造方法
US8987590B2 (en) 2012-08-01 2015-03-24 International Business Machines Corporation Thin film solar cells
CN102790130B (zh) * 2012-08-09 2015-08-05 中国科学院长春应用化学研究所 一种吸光层薄膜的制备方法
WO2014025176A1 (ko) * 2012-08-09 2014-02-13 한국에너지기술연구원 Na 공급 방법이 개선된 유연기판 CIGS 태양전지 및 그 제조방법
US9252304B2 (en) * 2012-10-04 2016-02-02 International Business Machines Corporation Solution processing of kesterite semiconductors
CN103779433B (zh) * 2012-10-22 2016-09-21 中物院成都科学技术发展中心 一种铜铟镓硒薄膜预制层及其制备方法
KR101389832B1 (ko) * 2012-11-09 2014-04-30 한국과학기술연구원 구리인듐셀레늄（ｃｉｇｓ） 또는 구리아연주석황（ｃｚｔｓ）계 박막형 태양전지 및 그의 제조방법
CN103094422A (zh) * 2013-01-29 2013-05-08 电子科技大学 铜锌锡硫硒薄膜制备中的掺杂工艺
KR20140097981A (ko) 2013-01-29 2014-08-07 주식회사 엘지화학 태양전지용 금속 나노 입자의 제조 방법, 그 금속 나노 입자를 포함하는 잉크 조성물 및 이를 사용한 박막의 제조 방법
WO2014136562A1 (ja) * 2013-03-07 2014-09-12 株式会社村田製作所 化合物半導体超微粒子、超微粒子薄膜及び光電変換デバイス
US20140261660A1 (en) * 2013-03-13 2014-09-18 Intermolecular , Inc. TCOs for Heterojunction Solar Cells
CN103214901B (zh) * 2013-04-08 2014-11-12 无锡舒玛天科新能源技术有限公司 一种制备铜铟镓硒墨水的方法
JP5835265B2 (ja) * 2013-04-11 2015-12-24 株式会社豊田中央研究所 光電変換材料及びその製造方法
KR101406704B1 (ko) 2013-04-18 2014-06-12 한국에너지기술연구원 동시진공증발공정 기반의 CZTSe 광흡수층 제조방법
US9634161B2 (en) 2013-05-01 2017-04-25 Delaware State University Nanoscale precursors for synthesis of Fe2(Si,Ge)(S,Se)4 crystalline particles and layers
CN104151932A (zh) * 2013-05-13 2014-11-19 中原工学院 柔性或薄膜太阳能电池用喷墨打印机墨水及其制备方法
JP6012866B2 (ja) * 2013-06-03 2016-10-25 東京応化工業株式会社 錯体およびその溶液の製造方法、太陽電池用光吸収層の製造方法および太陽電池の製造方法
JP2015002269A (ja) * 2013-06-14 2015-01-05 株式会社豊田中央研究所 光吸収体及び光電変換素子
EP3012873B1 (en) * 2013-08-01 2017-11-08 LG Chem, Ltd. Ink composition for manufacturing solar cell light absorbing layer and method for manufacturing thin film using same
JP6281835B2 (ja) * 2013-09-06 2018-02-21 国立大学法人 宮崎大学 太陽電池用化合物半導体ナノ粒子の作製方法
CN103560165A (zh) * 2013-09-12 2014-02-05 北京工业大学 一种硫醇基墨水制备Cu2ZnSn(S,Se)4太阳能电池吸收层薄膜的方法
WO2015039106A2 (en) * 2013-09-16 2015-03-19 Wake Forest University Polycrystalline films comprising copper-zinc-tin-chalcogenide and methods of making the same
CN106104773B (zh) * 2014-03-14 2018-02-16 东京应化工业株式会社 晶体生长控制剂、p型半导体微粒或p型半导体微粒膜的形成方法、空穴传输层形成用组合物及太阳能电池
CN103923515A (zh) * 2014-04-10 2014-07-16 北京工业大学 一种可用于制备Cu2ZnSnS4太阳能电池吸收层薄膜的墨水的配制方法
JP2015202979A (ja) * 2014-04-14 2015-11-16 学校法人中部大学 前駆体膜の作製方法
CN103928575A (zh) * 2014-04-29 2014-07-16 中国科学院长春应用化学研究所 一种吸光层薄膜、其制备方法和铜基薄膜太阳能电池
CN104037267B (zh) * 2014-06-30 2016-07-06 电子科技大学 一种对铜锌锡硒薄膜太阳能电池吸收层改性的方法
KR101708282B1 (ko) * 2014-09-29 2017-02-20 이화여자대학교 산학협력단 ＣＺＴＳｅ계 박막을 이용한 태양전지 및 이의 제조 방법
JP6404068B2 (ja) * 2014-10-01 2018-10-10 国立研究開発法人産業技術総合研究所 酸化物前駆体材料
KR101747540B1 (ko) 2014-11-13 2017-06-16 주식회사 엘지화학 금속 칼코게나이드 나노 입자의 제조방법 및 그에 기반한 광흡수층 박막의 제조방법
CN104701138A (zh) * 2015-03-08 2015-06-10 北京工业大学 一种CZTS(Se)纳米晶薄膜的制备方法
CN104993016B (zh) * 2015-06-10 2017-01-11 中南大学 一种贵金属纳米晶负载铜锌锡硫薄膜的制备方法
CN104876195B (zh) * 2015-06-17 2017-01-25 许昌学院 一种常温原位控制合成硒硫铜三元化合物的化学方法
CN105355720B (zh) * 2015-12-03 2017-02-01 华东师范大学 一种制备铜锡硫薄膜太阳能电池吸收层的方法
CN105615174B (zh) * 2016-03-17 2018-02-02 杨祖发 一种具有充电功能的太阳伞
US10563122B2 (en) 2016-03-18 2020-02-18 Osaka University Semiconductor nanoparticles and method of producing semiconductor nanoparticles
JP6464215B2 (ja) * 2016-03-18 2019-02-06 国立大学法人大阪大学 半導体ナノ粒子およびその製造方法
CN106098841B (zh) * 2016-06-28 2017-12-12 南安泉鸿孵化器管理有限公司 一种铜锌锡硫光电纤维的制备方法
CN106098814A (zh) * 2016-07-01 2016-11-09 福建师范大学 一种氧化物纳米颗粒制备太阳能电池吸收层CTSSe薄膜的方法
CN106118242A (zh) * 2016-07-28 2016-11-16 Tcl集团股份有限公司 一种喷墨打印用的量子点油墨及其制备方法
WO2018065156A1 (en) * 2016-10-07 2018-04-12 Haldor Topsøe A/S KESTERITE MATERIAL OF CZTS, CZTSe OR CZTSSe TYPE
CN106449812B (zh) * 2016-11-15 2020-06-30 云南师范大学 溅射锡靶和硫化铜靶制备铜锡硫薄膜电池的方法
CN107634107B (zh) * 2017-08-30 2019-03-26 中建材（合肥）新能源有限公司 一种增强光吸收效率型纳米光伏材料的制备方法
CN108807145B (zh) * 2018-06-05 2020-08-11 南京邮电大学 一种制备高效铜铟硒和铜铟镓硒薄膜太阳能电池的方法
AT521545B1 (de) * 2018-08-09 2024-12-15 Ait Austrian Inst Tech Gmbh Suspension zur herstellung einer halbleiterschicht
PL241410B1 (pl) * 2019-02-11 2022-09-26 Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie Sposób wytwarzania proszkowego kesterytu typu Cu<sub>₂</sub>SnZnS<sub>₄</sub>
PL241416B1 (pl) * 2019-02-11 2022-09-26 Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie Sposób wytwarzania proszkowego kesterytu typu Cu₂SnZnS₄, przeznaczonego do produkcji warstw czynnych w cienkowarstwowych ogniwach fotowoltaicznych
CN109979645B (zh) * 2019-03-29 2020-11-10 合肥工业大学 一种p型硫化铜透明导电薄膜及制备方法
FR3097856B1 (fr) * 2019-06-28 2022-01-07 Ifp Energies Now Solide cristallise izm-5 et son procede de preparation
CN111554760B (zh) * 2020-05-15 2022-06-17 南京邮电大学 铜锌锡硫薄膜太阳能电池的前驱体溶液及其制备方法与应用
KR102443380B1 (ko) * 2020-11-24 2022-09-19 한국과학기술연구원 전기화학적 질소환원을 위한 다중공 금속황화물 나노입자의 제조방법 및 이에 따라 제조된 다중공 금속황화물 나노입자
CN112892224B (zh) * 2021-01-15 2022-05-13 东华大学 一种MoS2/CNT复合膜的制备方法和应用
US20250297120A1 (en) * 2022-05-06 2025-09-25 Electroninks Incorporated Conductive ink compositions comprising gold complexes
CN118183634B (zh) * 2023-04-13 2026-03-20 太原理工大学 一种三元锡基化合物钠离子电池负极材料的制备方法

Family Cites Families (30)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51103039A (https=) * 1975-03-08 1976-09-11 Japan Metarufuinitsushingu Kan
US5100471A (en) * 1990-06-27 1992-03-31 Xerox Corporation Liquid ink compositions
JPH08316507A (ja) * 1995-05-12 1996-11-29 Yazaki Corp 薄膜太陽電池及びその製造方法
JP2899540B2 (ja) * 1995-06-12 1999-06-02 日東電工株式会社 フィルムキャリアおよびこれを用いた半導体装置
US6126740A (en) * 1995-09-29 2000-10-03 Midwest Research Institute Solution synthesis of mixed-metal chalcogenide nanoparticles and spray deposition of precursor films
DE19921515A1 (de) * 1999-05-10 2000-11-30 Ist Inst Fuer Solartechnologie Dünnschichtsolarzelle auf der Basis der Ia/IIIb/VIa- Verbindungshalbleiter und Verfahren zu ihrer Herstellung
GB0130967D0 (en) * 2001-12-24 2002-02-13 Hunting Oilfield Services Ltd Anti galling threaded joint
US6875661B2 (en) 2003-07-10 2005-04-05 International Business Machines Corporation Solution deposition of chalcogenide films
KR100727434B1 (ko) * 2005-03-04 2007-06-13 주식회사 잉크테크 투명 은 잉크 조성물 및 이를 이용한 박막 형성방법
JP4964152B2 (ja) * 2005-03-04 2012-06-27 インクテック カンパニー リミテッド 導電性インク組成物及びこの製造方法
RU2388774C2 (ru) * 2005-03-04 2010-05-10 Инктек Ко., Лтд. Проводящие чернила и способ их получения
JP2007048680A (ja) * 2005-08-12 2007-02-22 Mitsubishi Paper Mills Ltd 光電変換材料、半導体電極並びにそれを用いた光電変換素子
GB2472542B (en) * 2005-08-12 2011-03-23 Nanoco Technologies Ltd Nanoparticles
KR100768341B1 (ko) * 2005-11-09 2007-10-17 주식회사 나노신소재 금속성 잉크, 그리고 이를 이용한 전극형성방법 및 기판
US8835941B2 (en) 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
US7494841B2 (en) * 2006-05-12 2009-02-24 International Business Machines Corporation Solution-based deposition process for metal chalcogenides
US9105776B2 (en) * 2006-05-15 2015-08-11 Stion Corporation Method and structure for thin film photovoltaic materials using semiconductor materials
ATE516388T1 (de) * 2006-05-24 2011-07-15 Atotech Deutschland Gmbh Metallplattierungszusammensetzung und verfahren zur ablagerung von kupfer-zink-blech zur herstellung einer dünnfilm-solarzelle
GB2438452B (en) * 2006-05-24 2010-12-15 Nokia Corp Portable telecommunications apparatus
KR101252005B1 (ko) * 2006-06-22 2013-04-08 삼성전자주식회사 나노결정 입자를 함유하는 박막 및 그의 제조방법
US7638356B2 (en) * 2006-07-11 2009-12-29 The Trustees Of Princeton University Controlled growth of larger heterojunction interface area for organic photosensitive devices
JP5550904B2 (ja) * 2006-08-07 2014-07-16 インクテック カンパニー リミテッド 銀ナノ粒子の製造方法、及び薄膜形成方法
JP5309521B2 (ja) * 2006-10-11 2013-10-09 三菱マテリアル株式会社 電極形成用組成物及びその製造方法並びに該組成物を用いた電極の形成方法
WO2008154524A2 (en) * 2007-06-08 2008-12-18 Robert Stancel Edge mountable electrical connection assembly
WO2009014590A2 (en) * 2007-06-25 2009-01-29 Qd Vision, Inc. Compositions and methods including depositing nanomaterial
JP4783908B2 (ja) * 2007-07-18 2011-09-28 株式会社豊田中央研究所 光電素子
JP2009105130A (ja) * 2007-10-22 2009-05-14 Canon Inc 光起電力素子の製造方法
EP2067525A1 (en) * 2007-12-04 2009-06-10 Sony Corporation A method of preparing a nanoparticle film having metal ions incorporated
US8580157B2 (en) * 2009-02-20 2013-11-12 Kabushiki Kaisha Toyota Chuo Kenkyusho Sulfide and photoelectric element
WO2010098369A1 (ja) * 2009-02-27 2010-09-02 国立大学法人名古屋大学 半導体ナノ粒子及びその製法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8771555B2 (en) 2011-05-06 2014-07-08 Neo Solar Power Corp. Ink composition
US8828767B2 (en) 2011-12-30 2014-09-09 Industrial Technology Research Institute Fabriation method for light absorption layer of solar cell
TWI460869B (zh) * 2011-12-30 2014-11-11 財團法人工業技術研究院 太陽能電池光吸收層之製法

Also Published As

Publication number Publication date
JP2012527402A (ja) 2012-11-08
KR20120028933A (ko) 2012-03-23
EP2432842A1 (en) 2012-03-28
US20120060928A1 (en) 2012-03-15
WO2010135622A1 (en) 2010-11-25
WO2010135667A1 (en) 2010-11-25
KR20120030434A (ko) 2012-03-28
JP2012527401A (ja) 2012-11-08
JP2012527523A (ja) 2012-11-08
EP2432841A1 (en) 2012-03-28
EP2432840A1 (en) 2012-03-28
US20120061628A1 (en) 2012-03-15
WO2010135665A1 (en) 2010-11-25
US9112094B2 (en) 2015-08-18
CN102439098A (zh) 2012-05-02
KR20120036872A (ko) 2012-04-18
CN102439097A (zh) 2012-05-02
CN102439096A (zh) 2012-05-02

Similar Documents

Publication Publication Date Title
TW201107241A (en) Copper zinc tin chalcogenide nanoparticles
US20120055554A1 (en) Copper zinc tin chalcogenide nanoparticles
US7663057B2 (en) Solution-based fabrication of photovoltaic cell
JP6371764B2 (ja) セレン化１３族ナノ粒子
TW201008868A (en) Nanoparticles and methods of making and using
JP2013512311A (ja) 結晶性銅カルコゲニドナノ粒子の水性製造方法、そのように製造されたナノ粒子、ならびにこれらのナノ粒子を組み込んだインクおよびコーテッド基板
CN110277308B (zh) 硒化铜纳米粒子的制备
JP2011129564A (ja) 光電変換半導体膜を形成する塗布膜及びその製造方法、光電変換半導体膜、光電変換素子、及び太陽電池
WO2012100139A2 (en) Metal chalcogenides and methods of making and using same
CN105164047B (zh) Cu2ZnSnS4纳米粒子
JP5317648B2 (ja) 薄膜太陽電池の製法
Zhang et al. A Novel Ethanol-Based Non-Particulate Ink for Spin-Coating Cu2ZnSnS4 Thin Film
JP2015070099A (ja) 半導体層形成用塗工液、その製造方法、半導体層の製造方法及び太陽電池の製造方法
WO2015115020A1 (ja) 半導体層形成用塗工液、その製造方法、半導体層の製造方法及び太陽電池の製造方法