CN102439098A - 铜锌锡硫属元素化物纳米颗粒 - Google Patents

铜锌锡硫属元素化物纳米颗粒 Download PDF

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Publication number
CN102439098A
CN102439098A CN2010800223936A CN201080022393A CN102439098A CN 102439098 A CN102439098 A CN 102439098A CN 2010800223936 A CN2010800223936 A CN 2010800223936A CN 201080022393 A CN201080022393 A CN 201080022393A CN 102439098 A CN102439098 A CN 102439098A
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China
Prior art keywords
nanoparticles
capping agent
chalcogen
tin
zinc
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Pending
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CN2010800223936A
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Chinese (zh)
Inventor
D·R·拉杜
J·V·卡斯帕
L·K·约翰森
H·D·罗森菲尔德
I·马拉乔维奇
M·卢
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EIDP Inc
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EI Du Pont de Nemours and Co
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Publication of CN102439098A publication Critical patent/CN102439098A/zh
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    • C09D11/00—Inks
    • C09D11/02—Printing inks
    • C09D11/03—Printing inks characterised by features other than the chemical nature of the binder
    • C09D11/037—Printing inks characterised by features other than the chemical nature of the binder characterised by the pigment
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    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J2/00—Processes or devices for granulating materials, e.g. fertilisers in general; Rendering particulate materials free flowing in general, e.g. making them hydrophobic
    • B01J2/006—Coating of the granules without description of the process or the device by which the granules are obtained
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
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    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
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    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/1204—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material inorganic material, e.g. non-oxide and non-metallic such as sulfides, nitrides based compounds
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/02—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition
    • C23C18/12—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by thermal decomposition characterised by the deposition of inorganic material other than metallic material
    • C23C18/125—Process of deposition of the inorganic material
    • C23C18/1279—Process of deposition of the inorganic material performed under reactive atmosphere, e.g. oxidising or reducing atmospheres
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/127—Active materials comprising only Group IV-VI or only Group II-IV-VI chalcogenide materials, e.g. PbSnTe
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/203—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using transformation of metal, e.g. oxidation or nitridation
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/26—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition
    • H10P14/265—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using liquid deposition using solutions
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3424—Deposited materials, e.g. layers characterised by the chemical composition being Group IIB-VIA materials
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
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    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
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    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3436—Deposited materials, e.g. layers characterised by the chemical composition being chalcogenide semiconductor materials not being oxides, e.g. ternary compounds
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  • Chemical & Material Sciences (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • Crystallography & Structural Chemistry (AREA)
  • Photovoltaic Devices (AREA)
  • Inks, Pencil-Leads, Or Crayons (AREA)
  • Manufacture Of Metal Powder And Suspensions Thereof (AREA)
  • Application Of Or Painting With Fluid Materials (AREA)
  • Paints Or Removers (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Manufacturing & Machinery (AREA)
CN2010800223936A 2009-05-21 2010-05-21 铜锌锡硫属元素化物纳米颗粒 Pending CN102439098A (zh)

Applications Claiming Priority (9)

Application Number Priority Date Filing Date Title
US18018109P 2009-05-21 2009-05-21
US18018409P 2009-05-21 2009-05-21
US18018609P 2009-05-21 2009-05-21
US18017909P 2009-05-21 2009-05-21
US61/180179 2009-05-21
US61/180184 2009-05-21
US61/180181 2009-05-21
US61/180186 2009-05-21
PCT/US2010/035734 WO2010135622A1 (en) 2009-05-21 2010-05-21 Copper zinc tin chalcogenide nanoparticles

Publications (1)

Publication Number Publication Date
CN102439098A true CN102439098A (zh) 2012-05-02

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Family Applications (3)

Application Number Title Priority Date Filing Date
CN2010800223936A Pending CN102439098A (zh) 2009-05-21 2010-05-21 铜锌锡硫属元素化物纳米颗粒
CN2010800219822A Pending CN102439096A (zh) 2009-05-21 2010-05-21 制备硫化铜锡和硫化铜锌锡薄膜的方法
CN2010800223921A Pending CN102439097A (zh) 2009-05-21 2010-05-21 硫化铜锡和硫化铜锌锡墨组合物

Family Applications After (2)

Application Number Title Priority Date Filing Date
CN2010800219822A Pending CN102439096A (zh) 2009-05-21 2010-05-21 制备硫化铜锡和硫化铜锌锡薄膜的方法
CN2010800223921A Pending CN102439097A (zh) 2009-05-21 2010-05-21 硫化铜锡和硫化铜锌锡墨组合物

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Country Link
US (2) US9112094B2 (https=)
EP (3) EP2432840A1 (https=)
JP (3) JP2012527523A (https=)
KR (3) KR20120030434A (https=)
CN (3) CN102439098A (https=)
TW (1) TW201107241A (https=)
WO (3) WO2010135622A1 (https=)

Cited By (6)

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CN104037267A (zh) * 2014-06-30 2014-09-10 电子科技大学 一种对铜锌锡硒薄膜太阳能电池吸收层改性的方法
CN105615174A (zh) * 2016-03-17 2016-06-01 杨祖发 一种具有充电功能的太阳伞
CN106118242A (zh) * 2016-07-28 2016-11-16 Tcl集团股份有限公司 一种喷墨打印用的量子点油墨及其制备方法
CN107634107A (zh) * 2017-08-30 2018-01-26 常州豫春化工有限公司 一种增强光吸收效率型纳米光伏材料的制备方法
CN109328179A (zh) * 2016-10-07 2019-02-12 托普索公司 CZTS、CZTSe或CZTSSe型的锌黄锡矿材料
CN112892224A (zh) * 2021-01-15 2021-06-04 东华大学 一种MoS2/CNT复合膜的制备方法和应用

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JP6064314B2 (ja) * 2010-11-29 2017-01-25 株式会社リコー 金属酸化物薄膜形成用塗布液、金属酸化物薄膜の製造方法、及び電界効果型トランジスタの製造方法
JP5278778B2 (ja) * 2011-01-18 2013-09-04 株式会社豊田中央研究所 カルコゲナイト系化合物半導体及びその製造方法
US20140216555A1 (en) * 2011-01-21 2014-08-07 Regents Of The University Of Minnesota Metal chalcogenides and methods of making and using same
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JP5767399B2 (ja) * 2011-05-13 2015-08-19 エルジー・ケム・リミテッド 新規な化合物半導体及びその活用
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WO2013015745A1 (en) * 2011-07-25 2013-01-31 Nanyang Technological University Cu-zn-sn-s/se thin film and methods of forming the same
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JP5536153B2 (ja) * 2011-09-16 2014-07-02 新日光能源科技股▲ふん▼有限公司 カルコゲナイド半導体膜の形成方法及び光起電力装置
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WO2013091114A1 (en) * 2011-12-22 2013-06-27 The University Of Western Ontario Copper-containing nanocrystals and methods of preparation therefor
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