ATE516388T1 - Metallplattierungszusammensetzung und verfahren zur ablagerung von kupfer-zink-blech zur herstellung einer dünnfilm-solarzelle - Google Patents

Metallplattierungszusammensetzung und verfahren zur ablagerung von kupfer-zink-blech zur herstellung einer dünnfilm-solarzelle

Info

Publication number
ATE516388T1
ATE516388T1 AT08090007T AT08090007T ATE516388T1 AT E516388 T1 ATE516388 T1 AT E516388T1 AT 08090007 T AT08090007 T AT 08090007T AT 08090007 T AT08090007 T AT 08090007T AT E516388 T1 ATE516388 T1 AT E516388T1
Authority
AT
Austria
Prior art keywords
copper
metal plating
group
zinc
plating composition
Prior art date
Application number
AT08090007T
Other languages
English (en)
Inventor
Holger Kuehnlein
Joerg Schulze
Torsten Vos
Original Assignee
Atotech Deutschland Gmbh
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Atotech Deutschland Gmbh filed Critical Atotech Deutschland Gmbh
Application granted granted Critical
Publication of ATE516388T1 publication Critical patent/ATE516388T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
    • H01L31/0264—Inorganic materials
    • H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
    • H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/31—Coating with metals
    • C23C18/38—Coating with copper
    • C23C18/40—Coating with copper using reducing agents
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/48—Coating with alloys
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/56—Electroplating: Baths therefor from solutions of alloys
    • C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/10—Electroplating with more than one layer of the same or of different metals
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/48—After-treatment of electroplated surfaces
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/60—Electroplating characterised by the structure or texture of the layers
    • C25D5/615—Microstructure of the layers, e.g. mixed structure
    • C25D5/617—Crystalline layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/02557—Sulfides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02551—Group 12/16 materials
    • H01L21/0256—Selenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02623—Liquid deposition
    • H01L21/02628—Liquid deposition using solutions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/541—CuInSe2 material PV cells

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Power Engineering (AREA)
  • Electrochemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Electromagnetism (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Electroplating And Plating Baths Therefor (AREA)
  • Photovoltaic Devices (AREA)
  • Chemically Coating (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Manufacture And Refinement Of Metals (AREA)
  • Electrolytic Production Of Metals (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Physical Vapour Deposition (AREA)
AT08090007T 2006-05-24 2007-05-15 Metallplattierungszusammensetzung und verfahren zur ablagerung von kupfer-zink-blech zur herstellung einer dünnfilm-solarzelle ATE516388T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
EP06090086 2006-05-24

Publications (1)

Publication Number Publication Date
ATE516388T1 true ATE516388T1 (de) 2011-07-15

Family

ID=38626814

Family Applications (2)

Application Number Title Priority Date Filing Date
AT07725453T ATE486156T1 (de) 2006-05-24 2007-05-15 Zusammensetzung zur stromlosen metallabscheidung und verfahren zur abscheidung von kupfer-zink- zinn, das zur herstellung einer dünnfilm- solarzelle geeignet ist
AT08090007T ATE516388T1 (de) 2006-05-24 2007-05-15 Metallplattierungszusammensetzung und verfahren zur ablagerung von kupfer-zink-blech zur herstellung einer dünnfilm-solarzelle

Family Applications Before (1)

Application Number Title Priority Date Filing Date
AT07725453T ATE486156T1 (de) 2006-05-24 2007-05-15 Zusammensetzung zur stromlosen metallabscheidung und verfahren zur abscheidung von kupfer-zink- zinn, das zur herstellung einer dünnfilm- solarzelle geeignet ist

Country Status (9)

Country Link
US (1) US9263609B2 (de)
EP (3) EP2032743B1 (de)
JP (1) JP2009537997A (de)
CN (1) CN101522954B (de)
AT (2) ATE486156T1 (de)
DE (1) DE602007010141D1 (de)
ES (2) ES2547566T3 (de)
PT (1) PT2037006E (de)
WO (1) WO2007134843A2 (de)

Families Citing this family (86)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8927392B2 (en) 2007-11-02 2015-01-06 Siva Power, Inc. Methods for forming crystalline thin-film photovoltaic structures
JP5309285B2 (ja) * 2007-11-30 2013-10-09 株式会社豊田中央研究所 光電素子及びその製造方法
JP5476548B2 (ja) * 2008-08-18 2014-04-23 株式会社豊田中央研究所 硫化物系化合物半導体
JP2012515708A (ja) * 2009-01-21 2012-07-12 パデュー リサーチ ファンデーション ＣｕＩｎＳ２ナノ粒子を含む前駆体層のセレン化
WO2010088366A1 (en) 2009-01-28 2010-08-05 Wakonda Technologies, Inc. Large-grain crystalline thin-film structures and devices and methods for forming the same
US20100330367A1 (en) * 2009-02-03 2010-12-30 Ut-Battelle, Llc Microbially-mediated method for synthesis of non-oxide semiconductor nanoparticles
WO2010095608A1 (ja) * 2009-02-20 2010-08-26 株式会社豊田中央研究所 硫化物及び光電素子
KR20120030434A (ko) * 2009-05-21 2012-03-28 이 아이 듀폰 디 네모아 앤드 캄파니 구리 주석 황화물 및 구리 아연 주석 황화물 필름의 제조 방법
US20120055554A1 (en) * 2009-05-21 2012-03-08 E.I. Du Pont De Nemours And Company Copper zinc tin chalcogenide nanoparticles
EP2435359A4 (de) 2009-05-26 2016-04-20 Purdue Research Foundation Synthese mehrerer verschiedener chalcogenid-nanopartikel mit cu, zn, sn, s und se
US20120199173A1 (en) * 2009-07-31 2012-08-09 Aqt Solar, Inc. Interconnection Schemes for Photovoltaic Cells
JP5639816B2 (ja) * 2009-09-08 2014-12-10 東京応化工業株式会社 塗布方法及び塗布装置
JP5469966B2 (ja) 2009-09-08 2014-04-16 東京応化工業株式会社 塗布装置及び塗布方法
JP5439097B2 (ja) 2009-09-08 2014-03-12 東京応化工業株式会社 塗布装置及び塗布方法
JP5719546B2 (ja) * 2009-09-08 2015-05-20 東京応化工業株式会社 塗布装置及び塗布方法
US10147604B2 (en) 2009-10-27 2018-12-04 International Business Machines Corporation Aqueous-based method of forming semiconductor film and photovoltaic device including the film
US20110094557A1 (en) * 2009-10-27 2011-04-28 International Business Machines Corporation Method of forming semiconductor film and photovoltaic device including the film
TWI458115B (zh) * 2009-11-11 2014-10-21 Univ Nat Kaohsiung Marine Solar cell X ZnSnS Y Film (CZTS) manufacturing method
CN101700873B (zh) * 2009-11-20 2013-03-27 上海交通大学 铜锌锡硒纳米粒子的制备方法
WO2011066256A1 (en) 2009-11-25 2011-06-03 E. I. Du Pont De Nemours And Company Screen-printable quaternary chalcogenide compositions
WO2011066273A1 (en) 2009-11-25 2011-06-03 E. I. Du Pont De Nemours And Company Preparation of czts and its analogs in ionic liquids
TWI426633B (zh) * 2009-12-10 2014-02-11 Univ Nat Chiao Tung 倒置式有機太陽能元件及其製作方法
KR101144738B1 (ko) * 2009-12-28 2012-05-24 재단법인대구경북과학기술원 박막형 태양전지의 제조방법
TWI402996B (zh) * 2010-01-12 2013-07-21 Univ Nat Kaohsiung Marine 以銅鋅錫（ＣｕＺｎＳｎ）合金製備太陽能電池的ＣｕｘＺｎ ＳｎＳｙ（ＣＺＴＳ）薄膜之方法
KR101093663B1 (ko) 2010-01-21 2011-12-15 전남대학교산학협력단 단일 공정 전기증착법을 이용한 ｃｚｔｓ 박막의 제조방법
JP5641284B2 (ja) * 2010-02-03 2014-12-17 独立行政法人国立高等専門学校機構 化合物半導体、光電素子及びその製造方法
CN101824638B (zh) * 2010-05-06 2012-12-19 深圳丹邦投资集团有限公司 一种电化学沉积铜锌锡硒半导体薄膜材料的方法
CN101830444A (zh) * 2010-05-28 2010-09-15 上海交通大学 铜锌锡硫硒纳米粒子的制备方法
US9085829B2 (en) 2010-08-31 2015-07-21 International Business Machines Corporation Electrodeposition of thin-film cells containing non-toxic elements
US8426241B2 (en) 2010-09-09 2013-04-23 International Business Machines Corporation Structure and method of fabricating a CZTS photovoltaic device by electrodeposition
US9234291B2 (en) * 2010-09-09 2016-01-12 Globalfoundries Inc. Zinc thin films plating chemistry and methods
JP2012081428A (ja) 2010-10-13 2012-04-26 Tokyo Ohka Kogyo Co Ltd 塗布装置及び塗布方法
US20120097234A1 (en) * 2010-10-26 2012-04-26 International Business Machines Corporation Using Diffusion Barrier Layer for CuZnSn(S,Se) Thin Film Solar Cell
US20120100663A1 (en) * 2010-10-26 2012-04-26 International Business Machines Corporation Fabrication of CuZnSn(S,Se) Thin Film Solar Cell with Valve Controlled S and Se
CN103221471A (zh) * 2010-11-22 2013-07-24 E.I.内穆尔杜邦公司 半导体油墨、膜、涂层基板和制备方法
JP5478474B2 (ja) 2010-12-10 2014-04-23 富士フイルム株式会社 光電変換素子及びそれを備えた太陽電池
EP2660871A1 (de) * 2010-12-27 2013-11-06 Toppan Printing Co., Ltd. Verbundhalbleiter-dünnschichtsolarzelle und herstellungsverfahren dafür
US20110132462A1 (en) * 2010-12-28 2011-06-09 The University Of Utah Research Foundation Modified copper-zinc-tin semiconductor films, uses thereof and related methods
US20140216555A1 (en) * 2011-01-21 2014-08-07 Regents Of The University Of Minnesota Metal chalcogenides and methods of making and using same
EP2676300A4 (de) * 2011-02-18 2017-05-03 University of Washington Through Its Center for Commercialization Verfahren zur herstellung von halbleiterschichten mit i2-ii-iv-vi4 und i2-(ii, iv) vi4-iv-halbleiterschichten und elektronischen bauelementen einschliesslich der halbleiterschichten
US20120222730A1 (en) * 2011-03-01 2012-09-06 International Business Machines Corporation Tandem solar cell with improved absorption material
BR112013018999A2 (pt) * 2011-03-10 2017-01-31 Saint Gobain método para produzir o semicondutor de composto pentanário cztsse e célula solar de filme fino
US8501526B2 (en) 2011-04-22 2013-08-06 Alliance For Sustainable Energy, Llc Synthesizing photovoltaic thin films of high quality copper-zinc-tin alloy with at least one chalcogen species
JP2012250230A (ja) 2011-06-02 2012-12-20 Tokyo Ohka Kogyo Co Ltd 加熱装置、塗布装置及び加熱方法
US20130037111A1 (en) * 2011-08-10 2013-02-14 International Business Machines Corporation Process for Preparation of Elemental Chalcogen Solutions and Method of Employing Said Solutions in Preparation of Kesterite Films
US9242271B2 (en) * 2011-09-21 2016-01-26 Board Of Regents, The University Of Texas System Chemical and electrochemical synthesis and deposition of chalcogenides from room temperature ionic liquids
US20130074911A1 (en) * 2011-09-23 2013-03-28 Yueh-Chun Liao Photovoltaic Device Including a CZTS Absorber Layer and Method of Manufacturing the Same
JP5178904B1 (ja) * 2011-11-25 2013-04-10 昭和シェル石油株式会社 Ｃｚｔｓ系薄膜太陽電池及びその製造方法
JP5765632B2 (ja) * 2011-11-30 2015-08-19 株式会社村田製作所 化合物半導体超微粒子の製造方法
DE102011121799B4 (de) 2011-12-21 2013-08-29 Umicore Galvanotechnik Gmbh Elektrolyt und Verfahren zur elektrolytischen Abscheidung von Cu-Zn-Sn-Legierungsschichten und Verfahren zur Herstellung einer Dünnschichtsolarzelle
DE102011121798B4 (de) 2011-12-21 2013-08-29 Umicore Galvanotechnik Gmbh Elektrolyt und Verfahren zur elektrolytischen Abscheidung von Cu-Zn-Sn-Legierungsschichten und Verfahren zur Herstellung einer Dünnschichtsolarzelle
US20130164882A1 (en) * 2011-12-23 2013-06-27 International Business Machines Corporation Transparent conducting layer for solar cell applications
US20130168825A1 (en) * 2011-12-30 2013-07-04 Alliance For Sustainable Energy, Llc Fabrication of ionic liquid electrodeposited cu-sn-zn-s-se thin films and method of making
US9390917B2 (en) 2012-02-21 2016-07-12 Zetta Research and Development LLC—AQT Series Closed-space sublimation process for production of CZTS thin-films
US9157153B2 (en) * 2012-02-21 2015-10-13 Zetta Research and Development LLC—AQT Series Closed-space annealing of chalcogenide thin-films with volatile species
WO2013129484A1 (ja) * 2012-02-29 2013-09-06 Ikeda Shigeru 混合結晶、混合結晶製造方法、太陽電池、太陽電池製造方法及び電析浴
KR20140097981A (ko) 2013-01-29 2014-08-07 주식회사 엘지화학 태양전지용 금속 나노 입자의 제조 방법, 그 금속 나노 입자를 포함하는 잉크 조성물 및 이를 사용한 박막의 제조 방법
CN103094422A (zh) * 2013-01-29 2013-05-08 电子科技大学 铜锌锡硫硒薄膜制备中的掺杂工艺
CN103078010B (zh) * 2013-02-03 2016-12-28 电子科技大学 一种铜锌锡硫薄膜太阳能电池的全非真空工艺制备方法
CN104032336B (zh) * 2013-03-07 2017-05-31 纳米及先进材料研发院有限公司 制造用于太阳能电池应用的吸光材料的非真空方法
US9236283B2 (en) 2013-03-12 2016-01-12 Tokyo Ohka Kogyo Co., Ltd. Chamber apparatus and heating method
US20140261669A1 (en) * 2013-03-15 2014-09-18 The Government Of The United States Of America, As Represented By The Secretary Of The Navy Growth of cigs thin films on flexible glass substrates
FR3005313B1 (fr) * 2013-05-03 2016-05-27 Saint Gobain Vitrage de controle solaire comprenant une couche d'un alliage de zinc et de cuivre
KR101550349B1 (ko) * 2013-07-25 2015-09-08 한국과학기술연구원 이온성 액체 전해조와 이를 이용한 Cu2ZnSnS4-xSex (0≤x≤4) 박막의 단일 스텝 전기 증착법
KR101619933B1 (ko) 2013-08-01 2016-05-11 주식회사 엘지화학 태양전지 광흡수층 제조용 3층 코어-쉘 나노 입자 및 이의 제조 방법
TWI583013B (zh) * 2013-08-01 2017-05-11 Ｌｇ化學股份有限公司 用於製造太陽能電池的光吸收層之墨液組成物及使用彼之製造薄膜之方法、合成核-殼結構型奈米粒子之方法、薄膜及薄膜太陽能電池
JP6240440B2 (ja) 2013-08-30 2017-11-29 東京応化工業株式会社 チャンバー装置及び加熱方法
KR101500858B1 (ko) * 2013-09-17 2015-03-12 전남대학교산학협력단 전착법을 이용한 주석 박막 및 태양전지 광흡수층용 czts 기반 박막의 제조방법
CN103668361B (zh) * 2013-10-18 2016-06-15 国家电网公司 一种用于光伏发电系统的光伏电池的铜铟锌硒薄膜的制备方法
DE102013226297B3 (de) * 2013-12-17 2015-03-26 Umicore Galvanotechnik Gmbh Wässriger, cyanidfreier Elektrolyt für die Abscheidung von Kupfer-Zinn- und Kupfer-Zinn-Zink-Legierungen aus einem Elektrolyten und Verfahren zur elektrolytischen Abscheidung dieser Legierungen
KR101765987B1 (ko) * 2014-01-22 2017-08-08 한양대학교 산학협력단 태양 전지 및 그 제조 방법
AR100422A1 (es) * 2014-05-15 2016-10-05 Nippon Steel & Sumitomo Metal Corp Solución para deposición para conexión roscada para un caño o tubo y método de producción de la conexión roscada para un caño o tubo
CN104112609B (zh) * 2014-07-21 2016-04-06 南通万德科技有限公司 耐电弧烧蚀的开关触点及其制备方法
CN104103432B (zh) * 2014-07-21 2015-11-18 南通万德科技有限公司 含有钼合金镀层的开关触点及其制备方法
CN104112607B (zh) * 2014-07-21 2016-08-17 南通万德科技有限公司 一种镀金的开关触点及其制备方法
CN104112608B (zh) * 2014-07-21 2016-09-14 南通万德科技有限公司 一种含难熔金属合金镀层的开关触点及其制备方法
CN104103433B (zh) * 2014-07-21 2016-02-17 南通万德科技有限公司 一种耐电弧烧蚀的开关触点及其制备方法
CN104103435B (zh) * 2014-07-21 2016-07-13 南通万德科技有限公司 一种耐电弧烧蚀的钨合金开关触点及其制备方法
JPWO2016013670A1 (ja) * 2014-07-25 2017-04-27 凸版印刷株式会社 化合物薄膜太陽電池、化合物薄膜太陽電池の製造方法、および、光吸収層
KR101541463B1 (ko) * 2014-08-22 2015-08-19 연세대학교 산학협력단 금속 황화물 합금 형성 방법 및 금속 황화물 합금을 포함하는 전자 소자
CN109328179B (zh) * 2016-10-07 2021-12-24 托普索公司 CZTS、CZTSe或CZTSSe型的锌黄锡矿材料
KR20210018498A (ko) * 2018-07-06 2021-02-17 멀린 솔라 테크놀로지스 인코포레이티드 금속 물품을 흑화시키기 위한 방법
CN109261155B (zh) * 2018-09-25 2021-05-07 中南大学 一种碳纳米管/铜锌合金复合材料及其制备方法和应用
DE202021004169U1 (de) 2021-07-02 2022-12-07 Umicore Galvanotechnik Gmbh Bronzeschicht als Edelmetallersatz in Smart Cards
DE102021117095A1 (de) 2021-07-02 2023-01-05 Umicore Galvanotechnik Gmbh Bronzeschichten als Edelmetallersatz
US20230392702A1 (en) * 2022-06-03 2023-12-07 Entegris, Inc. Safety relief plug with a fusible metal and related devices and methods

Family Cites Families (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2435967A (en) 1945-02-27 1948-02-17 Westinghouse Electric Corp Bright alloy plating
US2530967A (en) 1947-09-09 1950-11-21 Westinghouse Electric Corp Bright alloy plating
GB1465169A (en) * 1974-05-30 1977-02-23 Usui Kokusai Sangyo Kk Corrosion-resistant coatings for metallic substrates
SU1177400A1 (ru) * 1983-03-28 1985-09-07 Московский ордена Ленина и ордена Трудового Красного Знамени химико-технологический институт им.Д.И.Менделеева Электролит дл осаждени покрытий из сплава на основе меди и цинка
SU1236010A1 (ru) 1984-07-17 1986-06-07 Московский ордена Ленина и ордена Трудового Красного Знамени химико-технологический институт им.Д.И.Менделеева Электролит дл осаждени покрытий сплавом медь-цинк-олово
US4582576A (en) * 1985-03-26 1986-04-15 Mcgean-Rohco, Inc. Plating bath and method for electroplating tin and/or lead
JPS624895A (ja) * 1985-06-26 1987-01-10 マツクジ−ン−ロ−コ・インコ−ポレ−テツド 水性めつき浴
JPS63206494A (ja) 1987-02-20 1988-08-25 Yutaka Fujiwara シアン化合物を含まない光沢銅−亜鉛−錫合金電気めつき浴
US5200057A (en) * 1991-11-05 1993-04-06 Mcgean-Rohco, Inc. Additive composition, acid zinc and zinc-alloy plating baths and methods for electrodedepositing zinc and zinc alloys
US5730852A (en) * 1995-09-25 1998-03-24 Davis, Joseph & Negley Preparation of cuxinygazsen (X=0-2, Y=0-2, Z=0-2, N=0-3) precursor films by electrodeposition for fabricating high efficiency solar cells
TW420729B (en) * 1996-02-12 2001-02-01 Gould Electronics Inc A non-cyanide brass plating bath and a method of making metallic foil having a brass layer using the non-cyanide brass plating bath
JPH1025595A (ja) * 1996-07-12 1998-01-27 Ishihara Chem Co Ltd スズ及びスズ合金めっき浴
US6475640B1 (en) 1998-10-28 2002-11-05 Pirelli Pneumatici S.P.A. Coated metal wire wire-reinforced elastomeric article containing the same and method of manufacture
US6508927B2 (en) 1998-11-05 2003-01-21 C. Uyemura & Co., Ltd. Tin-copper alloy electroplating bath
JP3871013B2 (ja) 1998-11-05 2007-01-24 上村工業株式会社 錫−銅合金電気めっき浴及びそれを使用するめっき方法
US7166152B2 (en) * 2002-08-23 2007-01-23 Daiwa Fine Chemicals Co., Ltd. Pretreatment solution for providing catalyst for electroless plating, pretreatment method using the solution, and electroless plated film and/or plated object produced by use of the method
EP1400613A2 (de) 2002-09-13 2004-03-24 Shipley Co. L.L.C. Zinn-Plattierungsverfahren
EP1408141B1 (de) * 2002-10-11 2014-12-17 Enthone Inc. Verfahren und Elektrolyt zur galvanischen Abscheidung von Bronzen
DE10301552B3 (de) * 2003-01-16 2004-06-24 Rehau Ag + Co. Korrosionsbeständige Messinglegierung für Trinkwasserformteile
CH697007A5 (fr) * 2004-05-03 2008-03-14 Solaronix Sa Procédé pour produire un composé chalcopyrite en couche mince.
US20060260948A2 (en) * 2005-04-14 2006-11-23 Enthone Inc. Method for electrodeposition of bronzes
JP4712439B2 (ja) * 2005-05-17 2011-06-29 学校法人早稲田大学 めっき液、めっき膜及びその作製方法

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WO2007134843A2 (en) 2007-11-29
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US9263609B2 (en) 2016-02-16
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