ES2547566T3 - Compuesto de recubrimiento metálico y método para la deposición de cobre, zinc y estaño adecuado para la producción de una célula solar de película fina - Google Patents
Compuesto de recubrimiento metálico y método para la deposición de cobre, zinc y estaño adecuado para la producción de una célula solar de película fina Download PDFInfo
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- ES2547566T3 ES2547566T3 ES11160198.5T ES11160198T ES2547566T3 ES 2547566 T3 ES2547566 T3 ES 2547566T3 ES 11160198 T ES11160198 T ES 11160198T ES 2547566 T3 ES2547566 T3 ES 2547566T3
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- zinc
- copper
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- tin
- deposition
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- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 title abstract description 11
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 title abstract description 10
- 239000011701 zinc Substances 0.000 title abstract description 10
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 title abstract description 9
- 239000010949 copper Substances 0.000 title abstract description 9
- 229910052718 tin Inorganic materials 0.000 title abstract description 9
- 229910052725 zinc Inorganic materials 0.000 title abstract description 9
- 229910052802 copper Inorganic materials 0.000 title abstract description 8
- 229910052751 metal Inorganic materials 0.000 title abstract description 5
- 239000002184 metal Substances 0.000 title abstract description 5
- 230000008021 deposition Effects 0.000 title abstract description 4
- 239000010409 thin film Substances 0.000 title abstract 2
- 239000011135 tin Substances 0.000 title description 8
- 239000011248 coating agent Substances 0.000 title description 4
- 238000000576 coating method Methods 0.000 title description 4
- 150000001875 compounds Chemical class 0.000 title description 3
- 238000000034 method Methods 0.000 title description 3
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract description 5
- 229910001128 Sn alloy Inorganic materials 0.000 abstract description 3
- 239000000126 substance Substances 0.000 abstract description 3
- 239000000654 additive Substances 0.000 abstract description 2
- 239000008139 complexing agent Substances 0.000 abstract description 2
- 238000007747 plating Methods 0.000 abstract 7
- 239000000203 mixture Substances 0.000 abstract 3
- PDYXSJSAMVACOH-UHFFFAOYSA-N [Cu].[Zn].[Sn] Chemical compound [Cu].[Zn].[Sn] PDYXSJSAMVACOH-UHFFFAOYSA-N 0.000 abstract 2
- 239000006096 absorbing agent Substances 0.000 abstract 2
- 125000000217 alkyl group Chemical group 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 229910052798 chalcogen Inorganic materials 0.000 abstract 2
- 150000001787 chalcogens Chemical class 0.000 abstract 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 abstract 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 abstract 1
- 230000000996 additive effect Effects 0.000 abstract 1
- 150000004770 chalcogenides Chemical class 0.000 abstract 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 125000002768 hydroxyalkyl group Chemical group 0.000 abstract 1
- 125000001997 phenyl group Chemical class [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract 1
- 231100000614 poison Toxicity 0.000 abstract 1
- 150000003839 salts Chemical class 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 abstract 1
- 239000011669 selenium Substances 0.000 abstract 1
- 239000004065 semiconductor Substances 0.000 abstract 1
- 229910052717 sulfur Inorganic materials 0.000 abstract 1
- 239000011593 sulfur Substances 0.000 abstract 1
- 239000003440 toxic substance Substances 0.000 abstract 1
- 239000003792 electrolyte Substances 0.000 description 5
- AFVFQIVMOAPDHO-UHFFFAOYSA-N Methanesulfonic acid Chemical compound CS(O)(=O)=O AFVFQIVMOAPDHO-UHFFFAOYSA-N 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- 239000004743 Polypropylene Substances 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 229920001155 polypropylene Polymers 0.000 description 3
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 description 2
- 230000002378 acidificating effect Effects 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- -1 dirt Substances 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229940098779 methanesulfonic acid Drugs 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- RGHNJXZEOKUKBD-SQOUGZDYSA-M D-gluconate Chemical compound OC[C@@H](O)[C@@H](O)[C@H](O)[C@@H](O)C([O-])=O RGHNJXZEOKUKBD-SQOUGZDYSA-M 0.000 description 1
- FEWJPZIEWOKRBE-JCYAYHJZSA-N Dextrotartaric acid Chemical compound OC(=O)[C@H](O)[C@@H](O)C(O)=O FEWJPZIEWOKRBE-JCYAYHJZSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910019142 PO4 Inorganic materials 0.000 description 1
- 229910001297 Zn alloy Inorganic materials 0.000 description 1
- 239000002318 adhesion promoter Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000004327 boric acid Substances 0.000 description 1
- 235000010338 boric acid Nutrition 0.000 description 1
- 239000002738 chelating agent Substances 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 238000005238 degreasing Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000004070 electrodeposition Methods 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 229940050410 gluconate Drugs 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000002480 mineral oil Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 235000021317 phosphate Nutrition 0.000 description 1
- 150000003013 phosphoric acid derivatives Chemical class 0.000 description 1
- 239000001103 potassium chloride Substances 0.000 description 1
- 235000011164 potassium chloride Nutrition 0.000 description 1
- 150000004760 silicates Chemical class 0.000 description 1
- WBHQBSYUUJJSRZ-UHFFFAOYSA-M sodium bisulfate Chemical compound [Na+].OS([O-])(=O)=O WBHQBSYUUJJSRZ-UHFFFAOYSA-M 0.000 description 1
- 229910000342 sodium bisulfate Inorganic materials 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 229940095064 tartrate Drugs 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- 238000007704 wet chemistry method Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/31—Coating with metals
- C23C18/38—Coating with copper
- C23C18/40—Coating with copper using reducing agents
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
- C23C18/48—Coating with alloys
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/56—Electroplating: Baths therefor from solutions of alloys
- C25D3/58—Electroplating: Baths therefor from solutions of alloys containing more than 50% by weight of copper
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/60—Electroplating characterised by the structure or texture of the layers
- C25D5/615—Microstructure of the layers, e.g. mixed structure
- C25D5/617—Crystalline layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02623—Liquid deposition
- H01L21/02628—Liquid deposition using solutions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
Abstract
Un método para producir una célula solar de película fina, que comprende: (a) proporcionar una película de sustrato, (b) proporcionar una capa de contacto posterior conductora de la electricidad, (c) proporcionar una capa absorbente de tipo P, donde dicha capa absorbente de tipo P está compuesta por una aleación de cobre, zinc y estaño que contiene al menos un calcógeno y que tiene la fórmula química CuxZnySnzSa, donde "x" abarca de 1,5 a 2,5, "y" abarca de 0,9 a 1,5, "z" abarca de 0,5 a 1,1 y "a" abarca de 0,1 a 4,2 o que tiene la fórmula química CuxZnySnzSeb, donde "x" abarca de 1,5 a 2,5, "y" abarca de 0,9 a 1,5, "z" abarca de 0,5 a 1,1 y "b" abarca de 0,1 a 4,2 o que tiene la fórmula química CuxZnySnzSaSeb, donde "x" abarca de 1,5 a 2,5, "y" abarca de 0,9 a 1,5, "z" abarca de 0,5 a 1,1, "a" abarca de 0,1 a 4,2 y "b" abarca de 0,1 a 4,2, (d) la provisión adicional de al menos una capa tampón de tipo N y (e) la provisión adicional de al menos una capa ventana. En el que al proporcionar una capa absorbente de tipo P en el paso (c) comprende la deposición de una aleación de cobre, zinc y estaño que contiene al menos un calcógeno, dicho paso del método comprende poner en contacto un sustrato y un ánodo con una composición de recubrimiento metálica libre de cianuro y seguido de una corriente eléctrica entre dicho sustrato y el ánodo, en el que la composición de recubrimiento metálica comprende al menos una especie de recubrimiento de cobre, al menos una especie de recubrimiento de zinc, al menos una especie de recubrimiento de estaño y al menos un agente complejante y al menos una especie de recubrimiento de calcógeno, y al menos un aditivo, seleccionado a partir de un grupo que consiste en compuestos de benceno disustituidos que tienen la fórmula química general I:**Fórmula** donde R1 y R2 son iguales o distintos, están seleccionados independientemente a partir de un grupo que incluye OH, SH, NR3R4, CO-R5, COOR5, CONR3R4, COSR5, SO2OR5, SO2R5, SO2NR3R4 y las sales de los mismos o tienen los significados mencionados con anterioridad y forman una cadena de condensación común; donde R3 y R4 son iguales o distintos, están seleccionados independientemente a partir de un grupo que incluye H y alquilo; y donde R5 está seleccionado a partir de un grupo que incluye H, grupos alquilo e hidroxialquilo.
Description
E11160198
17-09-2015
tratarse antes del recubrimiento con los procesos químicos húmedos desarrollados por el solicitante o con cualquier otro producto químico de lavado, para así eliminar cualquier traza de grasa, suciedad, polvo u óxido de la superficie. En la tabla 1 se describe un proceso estándar de prelavado:
- Nombre del baño
- Tiempo de tratamiento [s] Temperatura [º C] Observaciones
- Uniclean®*) 399
- 180 70
- Uniclean®*) 260
- 30 45
- Uniclean®*) 675
- 300 Temperatura ambiente Activación ultrasónica
- *) Marca comercial de Atotech Deutschland, Alemania
5 Uniclean® 399 es un limpiador alcalino suave y ligeramente espumoso que contiene carbonato, silicatos, fosfatos, tensidos y un agente quelante biodegradable de gluconato. Este baño está destinado a eliminar aceites minerales, pulir y amolar los residuos e impurezas pigmentadas de todos los metales.
10 Uniclean® 260 es un limpiador electrolítico alcalino débil de hidróxido de sodio, que conduce la electricidad, para su utilización en el desengrase catódico o anódico.
Uniclean® 675 es una agente de activación acídico para uso universal. Este limpiador contiene hidrogenosulfato de sodio y fluoruro de sodio.
15 Una vez lavado el sustrato, se puede depositar la aleación de cobre, zinc y estaño o la capa en sándwich sobre el sustrato.
En los ejemplos siguientes se establecen numerosos detalles específicos con tal de proporcionar un entendimiento
20 completo de la presente invención. No obstante, los expertos en la materia entenderán que la presente invención se puede llevar a la práctica sin alguno o todos estos detalles específicos:
25 Ejemplo 1: Deposición de una capa en sándwich de cobre, zinc y estaño
En una primera realización del cuarto aspecto de la invención, se formó una pila de cobre no eléctrico, estaño electrodepositado y zinc electrodepositado (desde abajo/contacto posterior hacia la parte superior de la célula):
30 Primero, puede depositarse cobre no eléctrico utilizando compuestos químicos disponibles comercialmente, por ejemplo, Printoganth® MV Plus y/o Noviganth® TU (ambos nombres son marcas comerciales de Atotech Deutschland). Ambos productos son baños de cobre no eléctrico basado en el tartrato como agente complejante. La formación de la solución se llevo a cabo de acuerdo con el manual de instrucciones de los baños en un vaso de precipitados de 5 l. La solución se agitó con aire y mediante la utilización de un agitador magnético. Se calentó en
35 una placa caliente hasta la temperatura de trabajo, aproximadamente por encima de los 30º C.
Se utilizó un sustrato de vidrio recubierto de molibdeno para recubrir unido mediante la utilización de hilo de cobre como soporte. La muestra se sumergió en el electrolito y se inició el recubrimiento no eléctrico mediante la aplicación de una corriente corta (3s) de 3 V entre el soporte de la muestra y el ánodo de hilo de cobre. Entonces, la
40 muestra se trató durante un periodo de tiempo suficiente para lograr el grosor de la capa deseado.
Entonces, se electrorecubrió con estaño utilizando un baño químico de recubrimiento disponible comercialmente, Stannopure® HSM (marca comercial de Atotech Deutschland). Este compuesto es un electrolito acídico de ácido metanosulfónico (MSA, del inglés methane sulfonic acid). Así, se depositó estaño puro.
45 Entonces, se electrorecubrió con zinc utilizando un electrolito Zylite® HT (marca comercial de Atotech Deutschland) mediante el empleo de un ánodo de zinc soluble. El Zylite® HT es un electrolito suave de cloruro de zinc que contiene cloruro de zinc, cloruro de potasio, ácido bórico y aditivos.
50 Tanto para el electrorecubrimiento con estaño como para el de zinc, los siguientes parámetros experimentales fueron iguales: El electrolito se contuvo en un tanque de polipropileno (PP) y se filtró continuamente a través de un filtro de 10 μm. Los ánodos se envolvieron en bolsas de PP. El proceso se llevó a cabo a temperatura ambiente. Se utilizó un soporte de acero inoxidable. El movimiento de la muestra se proporcionó manualmente o mediante la utilización de un motor.
55 Se obtuvo una pila de monocapas de cobre, zinc y estaño.
Ejemplo 2: Deposición de una capa en sándwich de cobre, zinc y estaño sobre un sustrato de vidrio promotor de adhesión.
60
17
Claims (1)
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imagen1 imagen2
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP06090086 | 2006-05-24 | ||
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DE602007010141D1 (de) | 2010-12-09 |
EP2336394A2 (en) | 2011-06-22 |
US9263609B2 (en) | 2016-02-16 |
EP2037006B9 (en) | 2012-02-15 |
JP2009537997A (ja) | 2009-10-29 |
CN101522954B (zh) | 2011-11-16 |
PT2037006E (pt) | 2011-08-24 |
EP2032743B1 (en) | 2010-10-27 |
EP2336394B1 (en) | 2015-07-01 |
ATE486156T1 (de) | 2010-11-15 |
US20090205714A1 (en) | 2009-08-20 |
EP2336394A3 (en) | 2011-11-30 |
EP2037006A3 (en) | 2009-08-05 |
WO2007134843A2 (en) | 2007-11-29 |
EP2032743A2 (en) | 2009-03-11 |
WO2007134843A3 (en) | 2008-11-27 |
CN101522954A (zh) | 2009-09-02 |
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