TW201101464A - Stacked semiconductor devices including a master device - Google Patents
Stacked semiconductor devices including a master device Download PDFInfo
- Publication number
- TW201101464A TW201101464A TW099104742A TW99104742A TW201101464A TW 201101464 A TW201101464 A TW 201101464A TW 099104742 A TW099104742 A TW 099104742A TW 99104742 A TW99104742 A TW 99104742A TW 201101464 A TW201101464 A TW 201101464A
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- volatile memory
- area
- volatile
- chip
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/30—Power supply circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/02—Disposition of storage elements, e.g. in the form of a matrix array
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W95/00—Packaging processes not covered by the other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
- H10W72/241—Dispositions, e.g. layouts
- H10W72/244—Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/851—Dispositions of multiple connectors or interconnections
- H10W72/874—On different surfaces
- H10W72/884—Die-attach connectors and bond wires
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/90—Bond pads, in general
- H10W72/921—Structures or relative sizes of bond pads
- H10W72/923—Bond pads having multiple stacked layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/284—Configurations of stacked chips characterised by structural arrangements for measuring or testing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/20—Configurations of stacked chips
- H10W90/297—Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/722—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/721—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
- H10W90/724—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/731—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
- H10W90/734—Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/754—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL
Landscapes
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
- Read Only Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15491009P | 2009-02-24 | 2009-02-24 | |
| US12/429,310 US7894230B2 (en) | 2009-02-24 | 2009-04-24 | Stacked semiconductor devices including a master device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW201101464A true TW201101464A (en) | 2011-01-01 |
Family
ID=42630822
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW099104742A TW201101464A (en) | 2009-02-24 | 2010-02-12 | Stacked semiconductor devices including a master device |
Country Status (8)
| Country | Link |
|---|---|
| US (4) | US7894230B2 (https=) |
| EP (1) | EP2401745A1 (https=) |
| JP (2) | JP2012518859A (https=) |
| KR (1) | KR20110121671A (https=) |
| CN (2) | CN104332179A (https=) |
| DE (1) | DE112010000880T5 (https=) |
| TW (1) | TW201101464A (https=) |
| WO (1) | WO2010096901A1 (https=) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI496163B (zh) * | 2013-08-22 | 2015-08-11 | Macronix Int Co Ltd | 具有與陣列層級分開的頁面緩衝器層級中之頁面緩衝器的記憶體裝置構造 |
| US9472284B2 (en) | 2012-11-19 | 2016-10-18 | Silicon Storage Technology, Inc. | Three-dimensional flash memory system |
| TWI682394B (zh) * | 2018-01-11 | 2020-01-11 | 華邦電子股份有限公司 | 半導體儲存裝置 |
| TWI692723B (zh) * | 2017-11-28 | 2020-05-01 | 華邦電子股份有限公司 | 半導體儲存裝置及其重置方法 |
Families Citing this family (46)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7515453B2 (en) * | 2005-06-24 | 2009-04-07 | Metaram, Inc. | Integrated memory core and memory interface circuit |
| WO2009102821A2 (en) * | 2008-02-12 | 2009-08-20 | Virident Systems, Inc. | Methods and apparatus for two-dimensional main memory |
| JP5504507B2 (ja) * | 2008-10-20 | 2014-05-28 | 国立大学法人 東京大学 | 集積回路装置 |
| US7894230B2 (en) * | 2009-02-24 | 2011-02-22 | Mosaid Technologies Incorporated | Stacked semiconductor devices including a master device |
| US20100332177A1 (en) * | 2009-06-30 | 2010-12-30 | National Tsing Hua University | Test access control apparatus and method thereof |
| KR20110052133A (ko) * | 2009-11-12 | 2011-05-18 | 주식회사 하이닉스반도체 | 반도체 장치 |
| US8159075B2 (en) * | 2009-12-18 | 2012-04-17 | United Microelectronics Corp. | Semiconductor chip stack and manufacturing method thereof |
| KR101046273B1 (ko) * | 2010-01-29 | 2011-07-04 | 주식회사 하이닉스반도체 | 반도체 장치 |
| US20110272788A1 (en) * | 2010-05-10 | 2011-11-10 | International Business Machines Corporation | Computer system wafer integrating different dies in stacked master-slave structures |
| KR101085724B1 (ko) * | 2010-05-10 | 2011-11-21 | 주식회사 하이닉스반도체 | 반도체 메모리 장치 및 그 동작 방법 |
| WO2012061633A2 (en) | 2010-11-03 | 2012-05-10 | Netlist, Inc. | Method and apparatus for optimizing driver load in a memory package |
| JP5623653B2 (ja) * | 2010-11-23 | 2014-11-12 | コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッドConversant Intellectual Property Management Inc. | 集積回路デバイス内の内部電源を共有するための方法および装置 |
| KR101854251B1 (ko) * | 2010-11-30 | 2018-05-03 | 삼성전자주식회사 | 멀티 채널 반도체 메모리 장치 및 그를 구비하는 반도체 장치 |
| JP2012146377A (ja) * | 2011-01-14 | 2012-08-02 | Elpida Memory Inc | 半導体装置 |
| JP5647026B2 (ja) * | 2011-02-02 | 2014-12-24 | ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. | 半導体装置及びその製造方法 |
| US9432298B1 (en) | 2011-12-09 | 2016-08-30 | P4tents1, LLC | System, method, and computer program product for improving memory systems |
| KR20120122549A (ko) | 2011-04-29 | 2012-11-07 | 에스케이하이닉스 주식회사 | 반도체 메모리 장치 및 그의 리페어 방법 |
| US10141314B2 (en) * | 2011-05-04 | 2018-11-27 | Micron Technology, Inc. | Memories and methods to provide configuration information to controllers |
| WO2013095676A1 (en) * | 2011-12-23 | 2013-06-27 | Intel Corporation | Separate microchannel voltage domains in stacked memory architecture |
| US10355001B2 (en) | 2012-02-15 | 2019-07-16 | Micron Technology, Inc. | Memories and methods to provide configuration information to controllers |
| KR101805343B1 (ko) | 2012-03-20 | 2017-12-05 | 인텔 코포레이션 | 동작 제어를 위한 장치 명령에 응답하는 메모리 장치 |
| KR20140008766A (ko) * | 2012-07-11 | 2014-01-22 | 에스케이하이닉스 주식회사 | 반도체메모리장치 |
| US9391453B2 (en) * | 2013-06-26 | 2016-07-12 | Intel Corporation | Power management in multi-die assemblies |
| US20150019802A1 (en) * | 2013-07-11 | 2015-01-15 | Qualcomm Incorporated | Monolithic three dimensional (3d) random access memory (ram) array architecture with bitcell and logic partitioning |
| KR20150056309A (ko) | 2013-11-15 | 2015-05-26 | 삼성전자주식회사 | 3차원 반도체 장치 및 그 제조 방법 |
| US20150155039A1 (en) * | 2013-12-02 | 2015-06-04 | Silicon Storage Technology, Inc. | Three-Dimensional Flash NOR Memory System With Configurable Pins |
| US9281302B2 (en) | 2014-02-20 | 2016-03-08 | International Business Machines Corporation | Implementing inverted master-slave 3D semiconductor stack |
| KR102229942B1 (ko) | 2014-07-09 | 2021-03-22 | 삼성전자주식회사 | 멀티 다이들을 갖는 멀티 채널 반도체 장치의 동작 방법 및 그에 따른 반도체 장치 |
| KR102179297B1 (ko) | 2014-07-09 | 2020-11-18 | 삼성전자주식회사 | 모노 패키지 내에서 인터커넥션을 가지는 반도체 장치 및 그에 따른 제조 방법 |
| US9711224B2 (en) | 2015-03-13 | 2017-07-18 | Micron Technology, Inc. | Devices including memory arrays, row decoder circuitries and column decoder circuitries |
| JP2016168780A (ja) * | 2015-03-13 | 2016-09-23 | 富士フイルム株式会社 | 液体供給装置及び画像形成装置 |
| KR102449571B1 (ko) | 2015-08-07 | 2022-10-04 | 삼성전자주식회사 | 반도체 장치 |
| US10020252B2 (en) * | 2016-11-04 | 2018-07-10 | Micron Technology, Inc. | Wiring with external terminal |
| US10141932B1 (en) | 2017-08-04 | 2018-11-27 | Micron Technology, Inc. | Wiring with external terminal |
| US10304497B2 (en) | 2017-08-17 | 2019-05-28 | Micron Technology, Inc. | Power supply wiring in a semiconductor memory device |
| JP6395919B1 (ja) | 2017-12-13 | 2018-09-26 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
| JP6453492B1 (ja) | 2018-01-09 | 2019-01-16 | ウィンボンド エレクトロニクス コーポレーション | 半導体記憶装置 |
| KR102532205B1 (ko) | 2018-07-09 | 2023-05-12 | 삼성전자 주식회사 | 반도체 칩 및 그 반도체 칩을 포함한 반도체 패키지 |
| US10860918B2 (en) * | 2018-08-21 | 2020-12-08 | Silicon Storage Technology, Inc. | Analog neural memory system for deep learning neural network comprising multiple vector-by-matrix multiplication arrays and shared components |
| US11657858B2 (en) | 2018-11-28 | 2023-05-23 | Samsung Electronics Co., Ltd. | Nonvolatile memory devices including memory planes and memory systems including the same |
| KR102670866B1 (ko) * | 2018-11-28 | 2024-05-30 | 삼성전자주식회사 | 복수의 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 이를 포함하는 메모리 시스템 |
| US10777232B2 (en) * | 2019-02-04 | 2020-09-15 | Micron Technology, Inc. | High bandwidth memory having plural channels |
| CN113051199A (zh) | 2019-12-26 | 2021-06-29 | 阿里巴巴集团控股有限公司 | 数据传输方法及装置 |
| CN114334942B (zh) * | 2020-09-30 | 2025-07-25 | 创意电子股份有限公司 | 具有接口的半导体器件及半导体器件的接口管理方法 |
| TWI744113B (zh) * | 2020-09-30 | 2021-10-21 | 創意電子股份有限公司 | 用於三維半導體器件的介面器件及介面方法 |
| WO2025020091A1 (zh) * | 2023-07-25 | 2025-01-30 | 长江存储科技有限责任公司 | 芯片封装结构及其制备方法、存储系统、电子设备 |
Family Cites Families (72)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5399898A (en) * | 1992-07-17 | 1995-03-21 | Lsi Logic Corporation | Multi-chip semiconductor arrangements using flip chip dies |
| JPH0812754B2 (ja) | 1990-08-20 | 1996-02-07 | 富士通株式会社 | 昇圧回路 |
| JPH04107617A (ja) * | 1990-08-28 | 1992-04-09 | Seiko Epson Corp | 半導体装置 |
| JPH05275657A (ja) * | 1992-03-26 | 1993-10-22 | Toshiba Corp | 半導体記憶装置 |
| JP2605968B2 (ja) * | 1993-04-06 | 1997-04-30 | 日本電気株式会社 | 半導体集積回路およびその形成方法 |
| US5579207A (en) * | 1994-10-20 | 1996-11-26 | Hughes Electronics | Three-dimensional integrated circuit stacking |
| JP3517489B2 (ja) | 1995-09-04 | 2004-04-12 | 株式会社日立製作所 | 不揮発性半導体記憶装置 |
| US5818107A (en) * | 1997-01-17 | 1998-10-06 | International Business Machines Corporation | Chip stacking by edge metallization |
| US6222276B1 (en) * | 1998-04-07 | 2001-04-24 | International Business Machines Corporation | Through-chip conductors for low inductance chip-to-chip integration and off-chip connections |
| JP3557114B2 (ja) * | 1998-12-22 | 2004-08-25 | 株式会社東芝 | 半導体記憶装置 |
| JP3662461B2 (ja) * | 1999-02-17 | 2005-06-22 | シャープ株式会社 | 半導体装置、およびその製造方法 |
| US6376904B1 (en) * | 1999-12-23 | 2002-04-23 | Rambus Inc. | Redistributed bond pads in stacked integrated circuit die package |
| TW521858U (en) | 2000-04-28 | 2003-02-21 | Agc Technology Inc | Integrated circuit apparatus with expandable memory |
| US6404043B1 (en) * | 2000-06-21 | 2002-06-11 | Dense-Pac Microsystems, Inc. | Panel stacking of BGA devices to form three-dimensional modules |
| JP4570809B2 (ja) * | 2000-09-04 | 2010-10-27 | 富士通セミコンダクター株式会社 | 積層型半導体装置及びその製造方法 |
| US6577013B1 (en) * | 2000-09-05 | 2003-06-10 | Amkor Technology, Inc. | Chip size semiconductor packages with stacked dies |
| US6327168B1 (en) * | 2000-10-19 | 2001-12-04 | Motorola, Inc. | Single-source or single-destination signal routing through identical electronics module |
| CN1159725C (zh) * | 2000-11-28 | 2004-07-28 | Agc科技股份有限公司 | 可扩充存储器的集成电路装置 |
| JP2002359346A (ja) * | 2001-05-30 | 2002-12-13 | Sharp Corp | 半導体装置および半導体チップの積層方法 |
| US6900528B2 (en) * | 2001-06-21 | 2005-05-31 | Micron Technology, Inc. | Stacked mass storage flash memory package |
| US6555917B1 (en) * | 2001-10-09 | 2003-04-29 | Amkor Technology, Inc. | Semiconductor package having stacked semiconductor chips and method of making the same |
| KR100435813B1 (ko) * | 2001-12-06 | 2004-06-12 | 삼성전자주식회사 | 금속 바를 이용하는 멀티 칩 패키지와 그 제조 방법 |
| US7081373B2 (en) * | 2001-12-14 | 2006-07-25 | Staktek Group, L.P. | CSP chip stack with flex circuit |
| US6635970B2 (en) * | 2002-02-06 | 2003-10-21 | International Business Machines Corporation | Power distribution design method for stacked flip-chip packages |
| US7045887B2 (en) * | 2002-10-08 | 2006-05-16 | Chippac, Inc. | Semiconductor multi-package module having inverted second package stacked over die-up flip-chip ball grid array (BGA) package |
| JP3908146B2 (ja) * | 2002-10-28 | 2007-04-25 | シャープ株式会社 | 半導体装置及び積層型半導体装置 |
| KR100497111B1 (ko) * | 2003-03-25 | 2005-06-28 | 삼성전자주식회사 | 웨이퍼 레벨 칩 스케일 패키지, 그를 적층한 적층 패키지및 그 제조 방법 |
| US6841883B1 (en) * | 2003-03-31 | 2005-01-11 | Micron Technology, Inc. | Multi-dice chip scale semiconductor components and wafer level methods of fabrication |
| KR20040087501A (ko) * | 2003-04-08 | 2004-10-14 | 삼성전자주식회사 | 센터 패드 반도체 칩의 패키지 및 그 제조방법 |
| JP4419049B2 (ja) | 2003-04-21 | 2010-02-24 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
| TWI225292B (en) * | 2003-04-23 | 2004-12-11 | Advanced Semiconductor Eng | Multi-chips stacked package |
| US6853064B2 (en) * | 2003-05-12 | 2005-02-08 | Micron Technology, Inc. | Semiconductor component having stacked, encapsulated dice |
| KR100626364B1 (ko) * | 2003-07-02 | 2006-09-20 | 삼성전자주식회사 | 멀티칩을 내장한 반도체패키지 |
| TWI229434B (en) * | 2003-08-25 | 2005-03-11 | Advanced Semiconductor Eng | Flip chip stacked package |
| KR100537892B1 (ko) * | 2003-08-26 | 2005-12-21 | 삼성전자주식회사 | 칩 스택 패키지와 그 제조 방법 |
| JP3880572B2 (ja) * | 2003-10-31 | 2007-02-14 | 沖電気工業株式会社 | 半導体チップ及び半導体装置 |
| JP4205553B2 (ja) * | 2003-11-06 | 2009-01-07 | エルピーダメモリ株式会社 | メモリモジュール及びメモリシステム |
| KR100621992B1 (ko) * | 2003-11-19 | 2006-09-13 | 삼성전자주식회사 | 이종 소자들의 웨이퍼 레벨 적층 구조와 방법 및 이를이용한 시스템-인-패키지 |
| US7049170B2 (en) * | 2003-12-17 | 2006-05-23 | Tru-Si Technologies, Inc. | Integrated circuits and packaging substrates with cavities, and attachment methods including insertion of protruding contact pads into cavities |
| JP4068616B2 (ja) * | 2003-12-26 | 2008-03-26 | エルピーダメモリ株式会社 | 半導体装置 |
| DE102004060345A1 (de) | 2003-12-26 | 2005-10-06 | Elpida Memory, Inc. | Halbleitervorrichtung mit geschichteten Chips |
| US7282791B2 (en) * | 2004-07-09 | 2007-10-16 | Elpida Memory, Inc. | Stacked semiconductor device and semiconductor memory module |
| DE102004049356B4 (de) * | 2004-10-08 | 2006-06-29 | Infineon Technologies Ag | Halbleitermodul mit einem internen Halbleiterchipstapel und Verfahren zur Herstellung desselben |
| CN1763771A (zh) * | 2004-10-20 | 2006-04-26 | 菘凯科技股份有限公司 | 记忆卡结构及其制造方法 |
| US7215031B2 (en) * | 2004-11-10 | 2007-05-08 | Oki Electric Industry Co., Ltd. | Multi chip package |
| US7217995B2 (en) * | 2004-11-12 | 2007-05-15 | Macronix International Co., Ltd. | Apparatus for stacking electrical components using insulated and interconnecting via |
| JP4309368B2 (ja) * | 2005-03-30 | 2009-08-05 | エルピーダメモリ株式会社 | 半導体記憶装置 |
| JP4423453B2 (ja) * | 2005-05-25 | 2010-03-03 | エルピーダメモリ株式会社 | 半導体記憶装置 |
| US7317256B2 (en) * | 2005-06-01 | 2008-01-08 | Intel Corporation | Electronic packaging including die with through silicon via |
| JP4507101B2 (ja) * | 2005-06-30 | 2010-07-21 | エルピーダメモリ株式会社 | 半導体記憶装置及びその製造方法 |
| US7269067B2 (en) * | 2005-07-06 | 2007-09-11 | Spansion Llc | Programming a memory device |
| KR100630761B1 (ko) * | 2005-08-23 | 2006-10-02 | 삼성전자주식회사 | 메모리 집적도가 다른 2개의 반도체 메모리 칩들을내장하는 반도체 멀티칩 패키지 |
| KR100729356B1 (ko) * | 2005-08-23 | 2007-06-15 | 삼성전자주식회사 | 플래시 메모리 장치의 레이아웃 구조 |
| KR101303518B1 (ko) * | 2005-09-02 | 2013-09-03 | 구글 인코포레이티드 | Dram 적층 방법 및 장치 |
| US7562271B2 (en) * | 2005-09-26 | 2009-07-14 | Rambus Inc. | Memory system topologies including a buffer device and an integrated circuit memory device |
| US20070165457A1 (en) * | 2005-09-30 | 2007-07-19 | Jin-Ki Kim | Nonvolatile memory system |
| US7629675B2 (en) * | 2006-05-03 | 2009-12-08 | Marvell International Technology Ltd. | System and method for routing signals between side-by-side die in lead frame type system in a package (SIP) devices |
| US7561457B2 (en) * | 2006-08-18 | 2009-07-14 | Spansion Llc | Select transistor using buried bit line from core |
| US7817470B2 (en) * | 2006-11-27 | 2010-10-19 | Mosaid Technologies Incorporated | Non-volatile memory serial core architecture |
| JP2008140220A (ja) * | 2006-12-04 | 2008-06-19 | Nec Corp | 半導体装置 |
| US7494846B2 (en) * | 2007-03-09 | 2009-02-24 | Taiwan Semiconductor Manufacturing Company, Ltd. | Design techniques for stacking identical memory dies |
| JP2008300469A (ja) * | 2007-05-30 | 2008-12-11 | Sharp Corp | 不揮発性半導体記憶装置 |
| JP2009003991A (ja) * | 2007-06-19 | 2009-01-08 | Toshiba Corp | 半導体装置及び半導体メモリテスト装置 |
| JP5149554B2 (ja) * | 2007-07-17 | 2013-02-20 | 株式会社日立製作所 | 半導体装置 |
| DE102007036989B4 (de) * | 2007-08-06 | 2015-02-26 | Qimonda Ag | Verfahren zum Betrieb einer Speichervorrichtung, Speichereinrichtung und Speichervorrichtung |
| US7623365B2 (en) * | 2007-08-29 | 2009-11-24 | Micron Technology, Inc. | Memory device interface methods, apparatus, and systems |
| US20090102821A1 (en) * | 2007-10-22 | 2009-04-23 | Pargman Steven R | Portable digital photograph albums and methods for providing the same |
| WO2009102821A2 (en) | 2008-02-12 | 2009-08-20 | Virident Systems, Inc. | Methods and apparatus for two-dimensional main memory |
| KR101393311B1 (ko) * | 2008-03-19 | 2014-05-12 | 삼성전자주식회사 | 프로세스 변화량을 보상하는 멀티 칩 패키지 메모리 |
| US8031505B2 (en) * | 2008-07-25 | 2011-10-04 | Samsung Electronics Co., Ltd. | Stacked memory module and system |
| US7796446B2 (en) * | 2008-09-19 | 2010-09-14 | Qimonda Ag | Memory dies for flexible use and method for configuring memory dies |
| US7894230B2 (en) * | 2009-02-24 | 2011-02-22 | Mosaid Technologies Incorporated | Stacked semiconductor devices including a master device |
-
2009
- 2009-04-24 US US12/429,310 patent/US7894230B2/en active Active
-
2010
- 2010-02-12 EP EP10745752A patent/EP2401745A1/en not_active Withdrawn
- 2010-02-12 DE DE112010000880T patent/DE112010000880T5/de not_active Withdrawn
- 2010-02-12 KR KR1020117009171A patent/KR20110121671A/ko not_active Ceased
- 2010-02-12 TW TW099104742A patent/TW201101464A/zh unknown
- 2010-02-12 CN CN201410445896.4A patent/CN104332179A/zh active Pending
- 2010-02-12 CN CN201080003026.1A patent/CN102216997B/zh active Active
- 2010-02-12 WO PCT/CA2010/000195 patent/WO2010096901A1/en not_active Ceased
- 2010-02-12 JP JP2011550388A patent/JP2012518859A/ja active Pending
-
2011
- 2011-01-13 US US13/005,774 patent/US8339826B2/en active Active
-
2012
- 2012-12-13 US US13/713,320 patent/US8593847B2/en active Active
-
2013
- 2013-10-15 JP JP2013214655A patent/JP2014057077A/ja active Pending
- 2013-11-18 US US14/082,454 patent/US8964440B2/en active Active
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9472284B2 (en) | 2012-11-19 | 2016-10-18 | Silicon Storage Technology, Inc. | Three-dimensional flash memory system |
| TWI557882B (zh) * | 2012-11-19 | 2016-11-11 | 超捷公司 | 三維快閃記憶體系統 |
| US9767923B2 (en) | 2012-11-19 | 2017-09-19 | Silicon Storage Technology, Inc. | Three-dimensional flash memory system |
| TWI496163B (zh) * | 2013-08-22 | 2015-08-11 | Macronix Int Co Ltd | 具有與陣列層級分開的頁面緩衝器層級中之頁面緩衝器的記憶體裝置構造 |
| TWI692723B (zh) * | 2017-11-28 | 2020-05-01 | 華邦電子股份有限公司 | 半導體儲存裝置及其重置方法 |
| TWI682394B (zh) * | 2018-01-11 | 2020-01-11 | 華邦電子股份有限公司 | 半導體儲存裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| US8339826B2 (en) | 2012-12-25 |
| US7894230B2 (en) | 2011-02-22 |
| US20100214812A1 (en) | 2010-08-26 |
| WO2010096901A1 (en) | 2010-09-02 |
| JP2012518859A (ja) | 2012-08-16 |
| US20140071729A1 (en) | 2014-03-13 |
| CN102216997A (zh) | 2011-10-12 |
| CN102216997B (zh) | 2014-10-01 |
| US8964440B2 (en) | 2015-02-24 |
| US20110110155A1 (en) | 2011-05-12 |
| US8593847B2 (en) | 2013-11-26 |
| EP2401745A1 (en) | 2012-01-04 |
| DE112010000880T5 (de) | 2012-10-11 |
| JP2014057077A (ja) | 2014-03-27 |
| CN104332179A (zh) | 2015-02-04 |
| KR20110121671A (ko) | 2011-11-08 |
| US20130102111A1 (en) | 2013-04-25 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW201101464A (en) | Stacked semiconductor devices including a master device | |
| JP7346899B2 (ja) | ウェハ対ウェハボンディングを用いた共有制御回路を備えた、3次元(3d)フラッシュメモリ | |
| US8799730B2 (en) | Semiconductor devices and semiconductor packages | |
| JP5698246B2 (ja) | チップ識別構造体を有する垂直積層可能なダイ | |
| KR101323079B1 (ko) | 불휘발성 기억 장치 | |
| JP2008300469A (ja) | 不揮発性半導体記憶装置 | |
| CN102646085A (zh) | 半导体装置 | |
| TW200414501A (en) | Semiconductor device | |
| CN107430548A (zh) | 存储装置的控制方法、及存储装置 | |
| KR20110082163A (ko) | 스택 디바이스 리매핑 및 수리 | |
| US20120051113A1 (en) | Semiconductor integrated circuit | |
| CN102486931A (zh) | 多通道半导体存储器装置以及包括该装置的半导体装置 | |
| TW201301472A (zh) | 半導體裝置 | |
| US9263371B2 (en) | Semiconductor device having through-silicon via | |
| US9029997B2 (en) | Stacked layer type semiconductor device and semiconductor system including the same | |
| CN111354680A (zh) | 用于三维nand的堆叠架构 | |
| CN110582809A (zh) | 具有相对对准的通道的双侧面存储器模块 | |
| CN113964126A (zh) | 半导体器件和包括该半导体器件的半导体封装件 | |
| US9418967B2 (en) | Semiconductor device | |
| US10403331B2 (en) | Semiconductor device having a floating option pad, and a method for manufacturing the same | |
| JP2011100898A (ja) | 半導体デバイス | |
| CN107293528A (zh) | 包括芯片启动焊盘的半导体封装 | |
| JP2009134828A (ja) | 半導体装置 | |
| CN115762586A (zh) | 命令和地址在存储器装置中的集中化放置 | |
| JP4471990B2 (ja) | 半導体装置 |