DE112010000880T5 - Gestapelte Halbleiterbauelemente einschliesslich eines Master-Bauelements - Google Patents

Gestapelte Halbleiterbauelemente einschliesslich eines Master-Bauelements Download PDF

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Publication number
DE112010000880T5
DE112010000880T5 DE112010000880T DE112010000880T DE112010000880T5 DE 112010000880 T5 DE112010000880 T5 DE 112010000880T5 DE 112010000880 T DE112010000880 T DE 112010000880T DE 112010000880 T DE112010000880 T DE 112010000880T DE 112010000880 T5 DE112010000880 T5 DE 112010000880T5
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Germany
Prior art keywords
chip
nonvolatile memory
additional
memory chip
chips
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DE112010000880T
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German (de)
English (en)
Inventor
Jin-Ki Kim
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Mosaid Technologies Inc
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Mosaid Technologies Inc
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    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • G11C5/063Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C16/00Erasable programmable read-only memories
    • G11C16/02Erasable programmable read-only memories electrically programmable
    • G11C16/06Auxiliary circuits, e.g. for writing into memory
    • G11C16/30Power supply circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/02Disposition of storage elements, e.g. in the form of a matrix array
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C5/00Details of stores covered by group G11C11/00
    • G11C5/06Arrangements for interconnecting storage elements electrically, e.g. by wiring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W95/00Packaging processes not covered by the other groups of this subclass
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H10W72/241Dispositions, e.g. layouts
    • H10W72/244Dispositions, e.g. layouts relative to underlying supporting features, e.g. bond pads, RDLs or vias
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/851Dispositions of multiple connectors or interconnections
    • H10W72/874On different surfaces
    • H10W72/884Die-attach connectors and bond wires
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/921Structures or relative sizes of bond pads
    • H10W72/923Bond pads having multiple stacked layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/284Configurations of stacked chips characterised by structural arrangements for measuring or testing
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/20Configurations of stacked chips
    • H10W90/297Configurations of stacked chips characterised by the through-semiconductor vias [TSVs] in the stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/722Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between stacked chips
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/721Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors
    • H10W90/724Package configurations characterised by the relative positions of pads or connectors relative to package parts of bump connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/731Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors
    • H10W90/734Package configurations characterised by the relative positions of pads or connectors relative to package parts of die-attach connectors between a chip and a stacked insulating package substrate, interposer or RDL
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/754Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked insulating package substrate, interposer or RDL

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  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
  • Read Only Memory (AREA)
DE112010000880T 2009-02-24 2010-02-12 Gestapelte Halbleiterbauelemente einschliesslich eines Master-Bauelements Withdrawn DE112010000880T5 (de)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US15491009P 2009-02-24 2009-02-24
US61/154,910 2009-02-24
US12/429,310 US7894230B2 (en) 2009-02-24 2009-04-24 Stacked semiconductor devices including a master device
US12/429,310 2009-04-24
PCT/CA2010/000195 WO2010096901A1 (en) 2009-02-24 2010-02-12 Stacked semiconductor devices including a master device

Publications (1)

Publication Number Publication Date
DE112010000880T5 true DE112010000880T5 (de) 2012-10-11

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Application Number Title Priority Date Filing Date
DE112010000880T Withdrawn DE112010000880T5 (de) 2009-02-24 2010-02-12 Gestapelte Halbleiterbauelemente einschliesslich eines Master-Bauelements

Country Status (8)

Country Link
US (4) US7894230B2 (https=)
EP (1) EP2401745A1 (https=)
JP (2) JP2012518859A (https=)
KR (1) KR20110121671A (https=)
CN (2) CN104332179A (https=)
DE (1) DE112010000880T5 (https=)
TW (1) TW201101464A (https=)
WO (1) WO2010096901A1 (https=)

Families Citing this family (50)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7515453B2 (en) * 2005-06-24 2009-04-07 Metaram, Inc. Integrated memory core and memory interface circuit
WO2009102821A2 (en) * 2008-02-12 2009-08-20 Virident Systems, Inc. Methods and apparatus for two-dimensional main memory
JP5504507B2 (ja) * 2008-10-20 2014-05-28 国立大学法人 東京大学 集積回路装置
US7894230B2 (en) * 2009-02-24 2011-02-22 Mosaid Technologies Incorporated Stacked semiconductor devices including a master device
US20100332177A1 (en) * 2009-06-30 2010-12-30 National Tsing Hua University Test access control apparatus and method thereof
KR20110052133A (ko) * 2009-11-12 2011-05-18 주식회사 하이닉스반도체 반도체 장치
US8159075B2 (en) * 2009-12-18 2012-04-17 United Microelectronics Corp. Semiconductor chip stack and manufacturing method thereof
KR101046273B1 (ko) * 2010-01-29 2011-07-04 주식회사 하이닉스반도체 반도체 장치
US20110272788A1 (en) * 2010-05-10 2011-11-10 International Business Machines Corporation Computer system wafer integrating different dies in stacked master-slave structures
KR101085724B1 (ko) * 2010-05-10 2011-11-21 주식회사 하이닉스반도체 반도체 메모리 장치 및 그 동작 방법
WO2012061633A2 (en) 2010-11-03 2012-05-10 Netlist, Inc. Method and apparatus for optimizing driver load in a memory package
JP5623653B2 (ja) * 2010-11-23 2014-11-12 コンバーサント・インテレクチュアル・プロパティ・マネジメント・インコーポレイテッドConversant Intellectual Property Management Inc. 集積回路デバイス内の内部電源を共有するための方法および装置
KR101854251B1 (ko) * 2010-11-30 2018-05-03 삼성전자주식회사 멀티 채널 반도체 메모리 장치 및 그를 구비하는 반도체 장치
JP2012146377A (ja) * 2011-01-14 2012-08-02 Elpida Memory Inc 半導体装置
JP5647026B2 (ja) * 2011-02-02 2014-12-24 ピーエスフォー ルクスコ エスエイアールエルPS4 Luxco S.a.r.l. 半導体装置及びその製造方法
US9432298B1 (en) 2011-12-09 2016-08-30 P4tents1, LLC System, method, and computer program product for improving memory systems
KR20120122549A (ko) 2011-04-29 2012-11-07 에스케이하이닉스 주식회사 반도체 메모리 장치 및 그의 리페어 방법
US10141314B2 (en) * 2011-05-04 2018-11-27 Micron Technology, Inc. Memories and methods to provide configuration information to controllers
WO2013095676A1 (en) * 2011-12-23 2013-06-27 Intel Corporation Separate microchannel voltage domains in stacked memory architecture
US10355001B2 (en) 2012-02-15 2019-07-16 Micron Technology, Inc. Memories and methods to provide configuration information to controllers
KR101805343B1 (ko) 2012-03-20 2017-12-05 인텔 코포레이션 동작 제어를 위한 장치 명령에 응답하는 메모리 장치
KR20140008766A (ko) * 2012-07-11 2014-01-22 에스케이하이닉스 주식회사 반도체메모리장치
US9472284B2 (en) * 2012-11-19 2016-10-18 Silicon Storage Technology, Inc. Three-dimensional flash memory system
US9391453B2 (en) * 2013-06-26 2016-07-12 Intel Corporation Power management in multi-die assemblies
US20150019802A1 (en) * 2013-07-11 2015-01-15 Qualcomm Incorporated Monolithic three dimensional (3d) random access memory (ram) array architecture with bitcell and logic partitioning
US9047953B2 (en) * 2013-08-22 2015-06-02 Macronix International Co., Ltd. Memory device structure with page buffers in a page-buffer level separate from the array level
KR20150056309A (ko) 2013-11-15 2015-05-26 삼성전자주식회사 3차원 반도체 장치 및 그 제조 방법
US20150155039A1 (en) * 2013-12-02 2015-06-04 Silicon Storage Technology, Inc. Three-Dimensional Flash NOR Memory System With Configurable Pins
US9281302B2 (en) 2014-02-20 2016-03-08 International Business Machines Corporation Implementing inverted master-slave 3D semiconductor stack
KR102229942B1 (ko) 2014-07-09 2021-03-22 삼성전자주식회사 멀티 다이들을 갖는 멀티 채널 반도체 장치의 동작 방법 및 그에 따른 반도체 장치
KR102179297B1 (ko) 2014-07-09 2020-11-18 삼성전자주식회사 모노 패키지 내에서 인터커넥션을 가지는 반도체 장치 및 그에 따른 제조 방법
US9711224B2 (en) 2015-03-13 2017-07-18 Micron Technology, Inc. Devices including memory arrays, row decoder circuitries and column decoder circuitries
JP2016168780A (ja) * 2015-03-13 2016-09-23 富士フイルム株式会社 液体供給装置及び画像形成装置
KR102449571B1 (ko) 2015-08-07 2022-10-04 삼성전자주식회사 반도체 장치
US10020252B2 (en) * 2016-11-04 2018-07-10 Micron Technology, Inc. Wiring with external terminal
US10141932B1 (en) 2017-08-04 2018-11-27 Micron Technology, Inc. Wiring with external terminal
US10304497B2 (en) 2017-08-17 2019-05-28 Micron Technology, Inc. Power supply wiring in a semiconductor memory device
JP6444475B1 (ja) 2017-11-28 2018-12-26 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
JP6395919B1 (ja) 2017-12-13 2018-09-26 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
JP6453492B1 (ja) 2018-01-09 2019-01-16 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
JP6482690B1 (ja) 2018-01-11 2019-03-13 ウィンボンド エレクトロニクス コーポレーション 半導体記憶装置
KR102532205B1 (ko) 2018-07-09 2023-05-12 삼성전자 주식회사 반도체 칩 및 그 반도체 칩을 포함한 반도체 패키지
US10860918B2 (en) * 2018-08-21 2020-12-08 Silicon Storage Technology, Inc. Analog neural memory system for deep learning neural network comprising multiple vector-by-matrix multiplication arrays and shared components
US11657858B2 (en) 2018-11-28 2023-05-23 Samsung Electronics Co., Ltd. Nonvolatile memory devices including memory planes and memory systems including the same
KR102670866B1 (ko) * 2018-11-28 2024-05-30 삼성전자주식회사 복수의 메모리 플레인들을 포함하는 비휘발성 메모리 장치 및 이를 포함하는 메모리 시스템
US10777232B2 (en) * 2019-02-04 2020-09-15 Micron Technology, Inc. High bandwidth memory having plural channels
CN113051199A (zh) 2019-12-26 2021-06-29 阿里巴巴集团控股有限公司 数据传输方法及装置
CN114334942B (zh) * 2020-09-30 2025-07-25 创意电子股份有限公司 具有接口的半导体器件及半导体器件的接口管理方法
TWI744113B (zh) * 2020-09-30 2021-10-21 創意電子股份有限公司 用於三維半導體器件的介面器件及介面方法
WO2025020091A1 (zh) * 2023-07-25 2025-01-30 长江存储科技有限责任公司 芯片封装结构及其制备方法、存储系统、电子设备

Family Cites Families (72)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5399898A (en) * 1992-07-17 1995-03-21 Lsi Logic Corporation Multi-chip semiconductor arrangements using flip chip dies
JPH0812754B2 (ja) 1990-08-20 1996-02-07 富士通株式会社 昇圧回路
JPH04107617A (ja) * 1990-08-28 1992-04-09 Seiko Epson Corp 半導体装置
JPH05275657A (ja) * 1992-03-26 1993-10-22 Toshiba Corp 半導体記憶装置
JP2605968B2 (ja) * 1993-04-06 1997-04-30 日本電気株式会社 半導体集積回路およびその形成方法
US5579207A (en) * 1994-10-20 1996-11-26 Hughes Electronics Three-dimensional integrated circuit stacking
JP3517489B2 (ja) 1995-09-04 2004-04-12 株式会社日立製作所 不揮発性半導体記憶装置
US5818107A (en) * 1997-01-17 1998-10-06 International Business Machines Corporation Chip stacking by edge metallization
US6222276B1 (en) * 1998-04-07 2001-04-24 International Business Machines Corporation Through-chip conductors for low inductance chip-to-chip integration and off-chip connections
JP3557114B2 (ja) * 1998-12-22 2004-08-25 株式会社東芝 半導体記憶装置
JP3662461B2 (ja) * 1999-02-17 2005-06-22 シャープ株式会社 半導体装置、およびその製造方法
US6376904B1 (en) * 1999-12-23 2002-04-23 Rambus Inc. Redistributed bond pads in stacked integrated circuit die package
TW521858U (en) 2000-04-28 2003-02-21 Agc Technology Inc Integrated circuit apparatus with expandable memory
US6404043B1 (en) * 2000-06-21 2002-06-11 Dense-Pac Microsystems, Inc. Panel stacking of BGA devices to form three-dimensional modules
JP4570809B2 (ja) * 2000-09-04 2010-10-27 富士通セミコンダクター株式会社 積層型半導体装置及びその製造方法
US6577013B1 (en) * 2000-09-05 2003-06-10 Amkor Technology, Inc. Chip size semiconductor packages with stacked dies
US6327168B1 (en) * 2000-10-19 2001-12-04 Motorola, Inc. Single-source or single-destination signal routing through identical electronics module
CN1159725C (zh) * 2000-11-28 2004-07-28 Agc科技股份有限公司 可扩充存储器的集成电路装置
JP2002359346A (ja) * 2001-05-30 2002-12-13 Sharp Corp 半導体装置および半導体チップの積層方法
US6900528B2 (en) * 2001-06-21 2005-05-31 Micron Technology, Inc. Stacked mass storage flash memory package
US6555917B1 (en) * 2001-10-09 2003-04-29 Amkor Technology, Inc. Semiconductor package having stacked semiconductor chips and method of making the same
KR100435813B1 (ko) * 2001-12-06 2004-06-12 삼성전자주식회사 금속 바를 이용하는 멀티 칩 패키지와 그 제조 방법
US7081373B2 (en) * 2001-12-14 2006-07-25 Staktek Group, L.P. CSP chip stack with flex circuit
US6635970B2 (en) * 2002-02-06 2003-10-21 International Business Machines Corporation Power distribution design method for stacked flip-chip packages
US7045887B2 (en) * 2002-10-08 2006-05-16 Chippac, Inc. Semiconductor multi-package module having inverted second package stacked over die-up flip-chip ball grid array (BGA) package
JP3908146B2 (ja) * 2002-10-28 2007-04-25 シャープ株式会社 半導体装置及び積層型半導体装置
KR100497111B1 (ko) * 2003-03-25 2005-06-28 삼성전자주식회사 웨이퍼 레벨 칩 스케일 패키지, 그를 적층한 적층 패키지및 그 제조 방법
US6841883B1 (en) * 2003-03-31 2005-01-11 Micron Technology, Inc. Multi-dice chip scale semiconductor components and wafer level methods of fabrication
KR20040087501A (ko) * 2003-04-08 2004-10-14 삼성전자주식회사 센터 패드 반도체 칩의 패키지 및 그 제조방법
JP4419049B2 (ja) 2003-04-21 2010-02-24 エルピーダメモリ株式会社 メモリモジュール及びメモリシステム
TWI225292B (en) * 2003-04-23 2004-12-11 Advanced Semiconductor Eng Multi-chips stacked package
US6853064B2 (en) * 2003-05-12 2005-02-08 Micron Technology, Inc. Semiconductor component having stacked, encapsulated dice
KR100626364B1 (ko) * 2003-07-02 2006-09-20 삼성전자주식회사 멀티칩을 내장한 반도체패키지
TWI229434B (en) * 2003-08-25 2005-03-11 Advanced Semiconductor Eng Flip chip stacked package
KR100537892B1 (ko) * 2003-08-26 2005-12-21 삼성전자주식회사 칩 스택 패키지와 그 제조 방법
JP3880572B2 (ja) * 2003-10-31 2007-02-14 沖電気工業株式会社 半導体チップ及び半導体装置
JP4205553B2 (ja) * 2003-11-06 2009-01-07 エルピーダメモリ株式会社 メモリモジュール及びメモリシステム
KR100621992B1 (ko) * 2003-11-19 2006-09-13 삼성전자주식회사 이종 소자들의 웨이퍼 레벨 적층 구조와 방법 및 이를이용한 시스템-인-패키지
US7049170B2 (en) * 2003-12-17 2006-05-23 Tru-Si Technologies, Inc. Integrated circuits and packaging substrates with cavities, and attachment methods including insertion of protruding contact pads into cavities
JP4068616B2 (ja) * 2003-12-26 2008-03-26 エルピーダメモリ株式会社 半導体装置
DE102004060345A1 (de) 2003-12-26 2005-10-06 Elpida Memory, Inc. Halbleitervorrichtung mit geschichteten Chips
US7282791B2 (en) * 2004-07-09 2007-10-16 Elpida Memory, Inc. Stacked semiconductor device and semiconductor memory module
DE102004049356B4 (de) * 2004-10-08 2006-06-29 Infineon Technologies Ag Halbleitermodul mit einem internen Halbleiterchipstapel und Verfahren zur Herstellung desselben
CN1763771A (zh) * 2004-10-20 2006-04-26 菘凯科技股份有限公司 记忆卡结构及其制造方法
US7215031B2 (en) * 2004-11-10 2007-05-08 Oki Electric Industry Co., Ltd. Multi chip package
US7217995B2 (en) * 2004-11-12 2007-05-15 Macronix International Co., Ltd. Apparatus for stacking electrical components using insulated and interconnecting via
JP4309368B2 (ja) * 2005-03-30 2009-08-05 エルピーダメモリ株式会社 半導体記憶装置
JP4423453B2 (ja) * 2005-05-25 2010-03-03 エルピーダメモリ株式会社 半導体記憶装置
US7317256B2 (en) * 2005-06-01 2008-01-08 Intel Corporation Electronic packaging including die with through silicon via
JP4507101B2 (ja) * 2005-06-30 2010-07-21 エルピーダメモリ株式会社 半導体記憶装置及びその製造方法
US7269067B2 (en) * 2005-07-06 2007-09-11 Spansion Llc Programming a memory device
KR100630761B1 (ko) * 2005-08-23 2006-10-02 삼성전자주식회사 메모리 집적도가 다른 2개의 반도체 메모리 칩들을내장하는 반도체 멀티칩 패키지
KR100729356B1 (ko) * 2005-08-23 2007-06-15 삼성전자주식회사 플래시 메모리 장치의 레이아웃 구조
KR101303518B1 (ko) * 2005-09-02 2013-09-03 구글 인코포레이티드 Dram 적층 방법 및 장치
US7562271B2 (en) * 2005-09-26 2009-07-14 Rambus Inc. Memory system topologies including a buffer device and an integrated circuit memory device
US20070165457A1 (en) * 2005-09-30 2007-07-19 Jin-Ki Kim Nonvolatile memory system
US7629675B2 (en) * 2006-05-03 2009-12-08 Marvell International Technology Ltd. System and method for routing signals between side-by-side die in lead frame type system in a package (SIP) devices
US7561457B2 (en) * 2006-08-18 2009-07-14 Spansion Llc Select transistor using buried bit line from core
US7817470B2 (en) * 2006-11-27 2010-10-19 Mosaid Technologies Incorporated Non-volatile memory serial core architecture
JP2008140220A (ja) * 2006-12-04 2008-06-19 Nec Corp 半導体装置
US7494846B2 (en) * 2007-03-09 2009-02-24 Taiwan Semiconductor Manufacturing Company, Ltd. Design techniques for stacking identical memory dies
JP2008300469A (ja) * 2007-05-30 2008-12-11 Sharp Corp 不揮発性半導体記憶装置
JP2009003991A (ja) * 2007-06-19 2009-01-08 Toshiba Corp 半導体装置及び半導体メモリテスト装置
JP5149554B2 (ja) * 2007-07-17 2013-02-20 株式会社日立製作所 半導体装置
DE102007036989B4 (de) * 2007-08-06 2015-02-26 Qimonda Ag Verfahren zum Betrieb einer Speichervorrichtung, Speichereinrichtung und Speichervorrichtung
US7623365B2 (en) * 2007-08-29 2009-11-24 Micron Technology, Inc. Memory device interface methods, apparatus, and systems
US20090102821A1 (en) * 2007-10-22 2009-04-23 Pargman Steven R Portable digital photograph albums and methods for providing the same
WO2009102821A2 (en) 2008-02-12 2009-08-20 Virident Systems, Inc. Methods and apparatus for two-dimensional main memory
KR101393311B1 (ko) * 2008-03-19 2014-05-12 삼성전자주식회사 프로세스 변화량을 보상하는 멀티 칩 패키지 메모리
US8031505B2 (en) * 2008-07-25 2011-10-04 Samsung Electronics Co., Ltd. Stacked memory module and system
US7796446B2 (en) * 2008-09-19 2010-09-14 Qimonda Ag Memory dies for flexible use and method for configuring memory dies
US7894230B2 (en) * 2009-02-24 2011-02-22 Mosaid Technologies Incorporated Stacked semiconductor devices including a master device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"A 177mm2 32 Gb MLC NAND Flash Memory in 34 nm CMOS" von Zeng et al., ISSCC 2009 Digest of Technical Papers, S. 236-237
http://www.siliconfareast.com/flipchipassy.htm

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JP2012518859A (ja) 2012-08-16
US20140071729A1 (en) 2014-03-13
CN102216997A (zh) 2011-10-12
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US8964440B2 (en) 2015-02-24
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US8593847B2 (en) 2013-11-26
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