TW201026596A - Methods for selective permeation of self-assembled block copolymers with metal oxides, methods for forming metal oxide structures, and semiconductor structures including same - Google Patents

Methods for selective permeation of self-assembled block copolymers with metal oxides, methods for forming metal oxide structures, and semiconductor structures including same Download PDF

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TW201026596A
TW201026596A TW098136563A TW98136563A TW201026596A TW 201026596 A TW201026596 A TW 201026596A TW 098136563 A TW098136563 A TW 098136563A TW 98136563 A TW98136563 A TW 98136563A TW 201026596 A TW201026596 A TW 201026596A
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metal oxide
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precursor
block copolymer
oxide precursor
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TWI392643B (zh
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Dan B Millward
Timothy A Quick
J Neil Greeley
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Micron Technology Inc
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    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
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Description

201026596 六、發明說明： 【發明所屬之技術領域】 本發明各實施例概言之係關於使用金屬氡化物選擇性穿 透自組裝嵌段共聚物以形成金屬氧化物結構之方法、使用 該等金屬氧化物結構形成半導體結構之方法、及包含該等 金屬氧化物結構之半導體結構。 本申請案主張2008年10月28日提出申請之關於「Methods for Selective Permeation of Self-Assembled Block Copolymers with Metal Oxides, Methods for Forming Metal Oxide Structures, and Semiconductor Structures Including Same」之美國專利申 請案第12/259,921號之申請日期的權利。 【先前技術】 電子組件之經濟性（亦即，每個晶粒之成本）隨著特徵尺 寸變小而顯著提高。隨著裝置特徵尺寸愈加變小，習用微 影製程變得愈加難以使用且愈加昂貴。因此，在製造奈米 結構、尤其特徵尺寸小於50 nm之結構時會遇到大量難 題。 可使用習用微影製程來製造此等級之分離或半緻密結 構，例如，奈米壓印微影術、雷射干涉量測術、極遠紫外 干涉微影術、蔭罩微影術、電子束微影術或基於掃描式探 針顯微鏡之微影術。然而，該等技術係受限的，此乃因曝 露工具極昂貴或極緩慢且另外，其可能不適於形成尺寸小 於50 nm之結構。 研發新穎方法及材料在促使小型裝置的製造更容易、更 144259.doc 201026596 廉價及更通用方面愈加重要。可克服習用微影技術之某些 缺點之一種圖案化方法實例係段共聚物微影術，其中使用 源自嵌段共聚物之自組裝的聚合物遮罩。已知藉由微相分 離使嵌段共聚物形成奈米級微結構域。在洗鑄至基板並退 火時，嵌段共聚物形成可用作半導體裝置製造中之蝕刻遮 罩的奈米級週期性圖案。藉由自組裝嵌段共聚物形成之分 離奈米級結構單元之該等有序圖案可潛在地用於製造週期 性奈米級結構單元且因此在半導體、光學、及磁性裝置中 Φ 具有廣泛應用。如此形成之結構單元尺寸通常介於5 nm至 50 nm之間，使用習用微影技術極難界定該等尺寸。該等 結構域之尺寸及形狀可藉由調節共聚物之分子量及組成來 加以控制。此外，該等結構域間之介面具有約1 nm至5 nm « 之寬度且可藉由改變共聚物嵌段之化學組成來加以控制。 然而，自組裝嵌段共聚物之結構域通常彼此具有很小或沒 有蝕刻選擇性。因此，期望改善自組裝結構域之蝕刻選擇 性。 參
Buriak 及 Chai，「Assembly of Aligned Linear Metallic Patterns on Silicon」Nature Nanotechnology，2，500-506(2007年 8月）揭 示使用陰離子金屬錯合物水溶液藉由金屬載入經對準水平 嵌段共聚物圓柱體的自組裝單層來形成對準金屬線。
Cha 等人，「Biometric Approaches for Fabricating High-Density Nanopatterned Arrays」Chem Mater.，19, 839-843 (2007) 揭示使用AB二嵌段共聚物之自組裝性質來製備聚合物薄 膜作為奈米蝕刻遮罩。藉由使嵌段聚合物薄膜内之結構域 144259.doc 201026596 富集諸如矽等金屬來形成更具抗蝕刻性之膜。
Chai及Buriak，「Using Cylindrical Domains of Block Copolymers to Self-Assemble and Align Metallic Nanowires」 ACS Nano, 2(3)，489-501 (2008)揭示使用陰離子金屬錯合物水溶液將金 屬離子載入矽表面上之自對準之聚苯乙烯-聚（2-乙烯基吡 啶）嵌段共聚物。將鹼性聚（2-乙烯基吡啶）質子化，使其具 有陽離子以便靜電吸引使得聚（2-乙烯基吡啶）結構域内產 生高局部濃度的金屬錯合物。實施電漿蝕刻製程以去除聚 合物並形成金屬奈米線。 鲁 為達成較高密度之電路、儲存裝置、或顯示器，業内需 要適於製造對於各元件具有所需較高密度及可靠尋址能力 之複雜裝置的較便宜製造技術以滿足未來需求。 【發明内容】 如下文進一步詳細所述，在一些實施例中，本發明包括 使金屬氧化物選擇性穿透或浸潰自組裝嵌段共聚物之方法 及使用嵌段共聚物之控制形成形成金屬氧化物結構之方 法。在其他實施例中，本發明包含含有該等金屬氧化物結 ® 構圖案之半導體結構。 【實施方式】 本文所用術語「基板」意指且包含在上面形成材料之基 底材料或構造。基板可為半導體基板、位於支撐結構上之 基底半導體層、金屬電極或上面形成有一或多個層、結構 或區域的半導體基板。基板可為習用矽基板或包括半導電 材料層之其他主體基板。本文所用術語「主體基板」不僅 144259.doc -6 - 201026596 意指且包含矽晶圓，且亦意指並包含絕緣體上矽（「s〇i」） 基板（例如藍寶石上矽（「SOS」）基板及玻璃上矽 (「SOG」）基板）、位於基本半導體底座上之石夕蟲晶層、及 其他半導體或光電材料（例如矽_鍺、鍺、砷化鎵、氮化 鎵、及磷化銦）。基板可經摻雜或未經摻雜。 本文所用術語「嵌段共聚物」意指且包含含有相同單體 單元之一或多個長序列（亦即，「嵌段」）之聚合物，該等長 序列共價鍵結至不同類型（例如，包含不同單體單元）之一 ❹或多個長序列（亦即’「嵌段」）。本文涵蓋各㈣段共聚 物，包含二嵌段共聚物（具有兩個嵌段之共聚物）、三嵌段 共聚物（具有三個嵌段之共聚物）、多嵌段共聚物（具有三個 以上嵌段之共聚物）、及其組合。 本文所用術語「相分離」意指且包含以下性質：嵌段共 聚物之均相聚合物或均相片段互相聚集，且異相聚合物或 異相片段分離成不同結構域。 藝 本文所用術語「退火」（「annealing」或「anneal」）意 指且包含處理嵌段共聚物以使嵌段共聚物之兩個或更多個 不同聚合嵌段組份之間能夠充分相分離以形成由重複結構 單元界定的有序圖案。本發明欲段共聚物之退火可藉由業 内已知之各種方法來達成，包含但不限於：熱退火（在真 空中或在含有氮氣或氬之惰性氛圍中）、溶劑蒸氣輔助退 火（在至’凰下或南於室溫下）、或超臨界流體輔助退火。作 為具體實例，可藉由將嵌段共聚物暴露於高於嵌段共聚物 之玻璃態轉變溫度（Tg)但低於其降解溫度（Td)之高溫下來 144259.doc 201026596 實施嵌段共聚物的熱退火，如下文更詳細所述。亦可使用 本文未闡述之其他習用退火方法。 本文所用術語「優先潤濕」意指且包含嵌段共聚物按以 下方式潤濕：其中傲段共聚物之一個欲段較其他叙段更易 於潤濕介面處之接觸表面。 下列闡述提供具體細節（例如材料類型、材料厚度、及 處理條件）以提供對本發明實施例之透徹闞述。然而，熟 習此項技術者應理解，可在不使用該等具體細節之情形下 實踐本發明實施例。實際上，本發明實施例可結合工業中 使用之習用半導體製造技術來實踐。此外，下文提供之闡 述並不形成製造其中存在金屬氧化物結構之半導體裝置的 完整過程流程’且下文所述之半導體裝置並不形成完整電 子裝置。下文僅詳細闡述為理解本發明實施例所需之彼等 處理行為及金屬氧化物結構或半導體裝置。自金屬氧化物 結構形成完整半導體裝置或自半導體裝置形成完整電子裝 置之額外處理動作可藉由習用製造技術來實施，其並未闡 述於本文中。 本文所述之材料可藉由任一適宜技術形成，包含但不限 於旋轉塗覆、毯覆式塗覆、化學氣相沈積（「CVD」）、原 子層沈積（「ALD」）、電漿增強ALD、或物理氣相沈積 (「PVD」）。或者，可原位生長該等材料。端視擬形成之 特定材料而定’熟習此項技術者可選擇用於沈積或生長材 料之技術。儘管本文所闡述及闡釋之材料可以層形式形 成，但該等材料並不限於此且可以其他三維構造形成。 144259.doc 201026596 現參照圖式，其中相同編號代表相同元件。該等圖無需 按比例繪製。 圖1係本發明之半導體結構100之實施例的部分剖視示意 圖可提供半導體結構1〇〇，其包含基板102、介電材料 104、半導電材料1〇6、及絕緣材料1〇8。如上所述，基板 102可包括半導體材料或諸如玻璃或藍寶石等材料之全部 或4刀日日圓。可在基板1〇2之表面上提供介電材料1〇4並與 八接觸舉例而s且並不加以限制，介電材料1 可包含 _ 氮氧化矽（SiON)、氮化矽（Si3N4)、二氧化矽（si〇2)、另一 氧化物材料、或聚合物材料’且可使用（例如）CVD、 PVD、或ALD形成。半導電材料1〇6可包含（例如）摻雜多晶 矽材料且可使用未詳細闡述於本文中之習用技術形成於介 電材料104上並與之接觸。絕緣材料1〇8可包含諸如二氧化 矽（Si〇2)等氧化物，且可藉由CVD、藉由降解原矽酸四乙 SI(TEOS)、或藉由積體電路製造技術中習知之任一其他方 法形成。 仍參照圖1 ’半導體結構100中可形成有溝槽丨丨〇，溝槽 U0填充有嵌段共聚物材料112。溝槽110可由絕緣材料108 之下表面111及側壁113界定。基於清晰起見，下列圖示中 所不之半導體結構100包含部分地穿過絕緣材料108厚度所 形成的一個溝槽110。在其他實施例中，在半導體結構100 中可形成複數個溝槽110。可穿過任一下伏材料（例如，半 導電材料106、介電材料104及基板102)之厚度形成溝槽 110。溝槽110之深度可足以形成彼段共聚物材料112之單 144259.doc 201026596 層’此在下文中將進一步詳細闡述。舉例而言，溝槽 可具有介於約15 nm至約50 nm之間的深度，且可使用（例 如）積體電路製造技術中習知之圖案化技術（例如，遮蔽及 蝕刻）形成。此外，在一些實施例中，可使用諸如原子層 沈積（ALD)等製程在溝槽11〇之側壁U3及下表面^上形成 另一介電材料（未圖示），例如二氧化矽。作為非限制性實 例’另一介電材料可為優先潤濕嵌段共聚物材料112之次 要結構域的材料之保角薄膜，如本文中進一步詳細所述 般。 仍參照圖1，可在半導體結構1 〇〇上（亦即，絕緣材料丨08 之暴露表面及溝槽11 〇内）提供嵌段共聚物材料丨丨2 ^舉例 而言且並不加以限制，可將嵌段共聚物材料112沈積至半 導體結構100上直至厚度足以填充溝槽〗1〇且上覆絕緣材料 108之表面114。作為非限制性實例，可施加上覆於絕緣材 料108之表面Π4上之嵌段聚合物材料112至厚度小於或等 於嵌段共聚物材料U2的單層。可藉由任一適宜技術施加 嵌段共聚物材料112，例如，旋轉澆鱗、旋轉塗覆、喷 霧、油墨塗覆、或浸潰塗覆》 嵌段共聚物材料112可包含至少兩個彼此基本不混溶之 共聚物嵌段。作為非限制性實例，嵌段共聚物材料112可 為包含親水性佚段及疏水性嵌段且能夠發生相分離的二嵌 段共聚物’且其將進-步詳細闡述於下文中。嵌段共聚物 材料112可以介於約80:20至約5〇:5〇間之重量比率且更具 體而σ以約70.30之重量比率包含親水性嵌段及疏水性嵌 I44259.doc -10- 201026596 段。 親水性嵌段可包含經調配在接觸溶劑（例如醇）後用於溶 脹或潤濕之聚合物。作為非限制性實例，親水性嵌段聚合 物可包含聚乙烯基°比啶（PVP)、羥丙基甲基纖維素 (HPMC)、聚乙二醇（PEG)、聚（環氧乙烷）-共-聚（環氧丙院） 二-或多嵌段共聚物、聚（環氧乙烷）(PEO)、聚（乙烯醇） (PVA)、聚（乙烯-共-乙烯醇）、聚（丙烯酸）、聚（乙基噁唑 啉）、聚（丙烯酸烷基酯）、聚（丙烯醯胺）、聚（N-烷基丙烯醯 胺）、聚（N，N-二烷基丙烯醯胺）、聚（丙二醇）（ppg)、聚（環 氧丙烷）、部分或完全水解之聚（乙烯醇）、右旋糖、及其共 聚物及組合。 疏水性嵌段可包含不可溶於溶劑（例如醇）中之聚合物， 其在接觸後使親水性嵌段發生溶脹或潤濕。作為非限制性 實例，疏水性嵌段可包含聚笨乙烯（PS)、聚乙烯（pe)、聚 丙烯（PP)、聚氯丁二烯（CR)、聚乙烯基醚、聚（乙酸乙烯 酯）（PVAC)、聚（氣乙烯）（PVC)、聚矽氧烷、聚胺基甲酸酯 (PU)、聚丙烯酸酯、聚丙烯醯胺、及其共聚物及混合物。 作為非限制性實例，可用於形成自組裝共聚物之嵌段共 聚物材料112可包含聚苯乙烯-嵌段-聚乙烯基D比咬（ps_b_ PVP)、聚苯乙烯-嵌段-聚甲基丙稀酸甲酯（ps_b_pMMA)、 聚環氧乙烷-嵌段·聚異戊二烯（PEO-b-PI)、聚環氧乙烷·嵌 段-聚丁二烯（PEO-b-PBD)、聚環氧乙烷.嵌段.聚苯乙烯 (PEO-b-PS)、聚環氧乙烧·欲段-聚曱基丙稀酸甲酯（pE〇b_ PMMA)、聚環氧乙烧-彼段-聚乙基乙嫦（pE〇_b_pEE)、聚 144259.doc -11 - 201026596 苯乙烯-嵌段-聚異戊二烯（PS-b-PI)、聚苯乙烯-嵌段-聚丁 二烯（PS-b-PBD)、聚苯乙烯-嵌段-聚二茂鐵二甲基矽烷 (PS-b-PFS)、聚丁二烯-嵌段-聚乙烯基吡啶（PBD-b-PVP)、 及聚異戊二烯-嵌段-聚曱基丙烯酸曱酯（PI-b-PMMA)。如 上所述，嵌段共聚物可為二嵌段共聚物。然而，亦可使用 具有三個（三嵌段共聚物）或更多個（多嵌段共聚物）嵌段之 嵌段共聚物。三嵌段共聚物之一實例包含但不限於聚（苯 乙烯-嵌段曱基丙烯酸曱酯-嵌段-環氧乙烷）。多嵌段共聚 物可具有三個或更多個選自以下之嵌段：聚苯乙烯、聚甲 _ 基丙烯酸甲酯、聚環氧乙烷、聚異戊二烯、聚丁二烯、聚 乳酸、聚乙烯基"比咬、及其組合。 參照圖2，可使用退火製程來引發在嵌段共聚物材料丨12 之共聚物嵌段之間發生相分離。可使用（例如）熱退火、溶 劑蒸氣-辅助退火、超臨界流體-輔助退火、或其組合對嵌 段共聚物材料112進行退火，此進一步詳細闡述於下文 中。在退火期間，嵌段共聚物材料112可發生相分離，其 中溝槽110之側壁113引導嵌段共聚物材料112之共聚物嵌 Ο 段進行自組裝或自對準（此通常稱作「製圖外延」）以形成 複數個有序結構域118 ’該等有序結構域包含位於至少一 個不同共聚物喪段之基質120内的至少一個共聚物嵌段。 有序結構域11 8可包含具有規則或限定順序之重複結構單 元。特定言之，溝槽110之下表面1Π及側壁Π3可最優先 至少由嵌段共聚物材料112之至少兩個共聚物嵌段的次要 嵌段潤濕。次要共聚物嵌段對溝槽丨丨〇之下表面u丨及側壁 144259.doc •12· 201026596 113二者的優先潤濕使得可在溝槽11 〇内形成有序結構域 118 ° 母一結構域118皆包含由非共價鍵結合在一起之聚合物 鏈的自聚集次要嵌段部分且與溝槽11〇之軸平行對準。作 為非限制性實例’嵌段共聚物材料112之相分離可使得形 成包含由基質120包圍之結構域118之有序陣列117的自組 裝膜116。舉例而言，在嵌段共聚物材料112包含親水性嵌 段及疏水性嵌段之情形下，結構域118可包含親水性嵌 ¥又’且基質12〇可包含疏水性嵌_段。結構域118之數量可藉 由溝槽110之寬度以及固有週期（L〇)來確定。根據共聚物 之週期（Lo)，可控制溝槽ι10之寬度以形成取決於寬度/週 期的溝槽數量（η) ’此可（例如）足以形成介於約1至約5〇(5〇) 之間的結構域11 8數量。此外，可在基質1 20與絕緣材料 108之下伏材料間之介面處形成包含親水性嵌段的介面材 料 122。 基於清晰起見’圖2中所示之結構域118為圓柱體，其具 有平行於基板102之轴125且與溝槽11〇之側壁113水平對準 (亦即’平行於溝槽110之表面111)0作為非限制性實例， 結構域118可為直徑介於約5 nm至約5 0 nm之間的圓柱體。 結構域118之長度可基本等於溝槽ι1〇之長度。可藉由嵌段 共聚物中共聚物嵌段之分子量及體積分數來控制自組裝膜 116之形態（包含結構域118之大小及形狀）以尤其產生薄片 形、圓柱形或球形形態。作為非限制性實例，在嵌段共聚 物材料112以約80:20至60:40之比率包含聚乙烯基吡啶及聚 144259.doc -13- 201026596 苯乙婦時，可形成聚乙烯基吨唆之薄片形結構域或交替圓 柱體常稱作「條帶」在其他實施例中結構域ιΐ8可 為球形單7L、六方形單疋、或可由嵌段共聚物材料112之 相分離形成的任一其他形狀。 在-些實施财，可在真空或惰性氛圍中將嵌段共聚物 材料112加熱至共聚物礙段之破璃態轉變溫度或高於玻璃 態轉變溫度且低於其降解溫度之溫度以使嵌段共聚物材料 U2發生相分離並形成自組裝膜Π6。作為非限制性實例， 隋性氛圍可包含氮氣或氬。舉例而言，可將喪段共聚物材 料112加熱至介於約13(rc至約275<t之間之溫度。 在其他實施例中，可將嵌段共聚物材料112暴露於溶劑 蒸氣中以促進相分離並形成有序結構域丨丨8。可藉由將能 夠引發相分離之溶劑轉化為氣相來形成溶劑蒸氣。作為非 限制性實例，可自甲苯、四氫呋喃、二甲基甲醯胺、及其 組合形成溶劑蒸氣。舉例而言，可藉由將嵌段共聚物材料 112在大於或等於約24°C之溫度下暴露於甲苯蒸氣中來對 嵌段共聚物材料112進行退火。 作為非限制性實例，在共聚物嵌段材料112係聚苯乙婦_ 嵌段-聚乙烯基吡啶時，聚乙烯基吡啶在退火製程期間可 優先潤濕溝槽110之下表面111及側壁113，而聚苯乙稀可 優先潤濕空氣介面，從而形成聚乙稀基°比淀之介面材料 122以及包含聚乙烯基吡啶之重複圓柱形結構域118，該等 結構域各自具有平行於溝槽110軸之轴125且佈置於包含聚 苯乙烯之基質120内。 144259.doc • 14· 201026596 參照圖3，可將圖2中所示之自組裝膜116暴露於可穿透 有序結構域118(圖2)之至少一部分之溶脹劑，從而形成溶 脹結構域126 ^溶脹劑可使溶脹結構域126之某一區域溶脹 或破裂，如圖3中所示，而溶脹結構域126之剩餘區域可維 持與有序結構域118(圖2)之形狀基本相同或類似的形狀。 溶脹劑可經由已溶脹或破裂之間冑區域橫向穿透溶服結構 域128之剩餘區域。在一些實施例中，溶脹劑可包含金屬 氧化物前驅體且可引入以形成經金屬氧化物前驅體124浸 潰之溶脹結構域。可在無水條件下（例如，在惰性氣體氛 圍中）將溶脹劑施加至自組裝膜116。作為非限制性實例， 溶脹結構域126可具有磨藉樣形狀。溶脹結構域126可橫向 上彼此間隔距離di。舉例而言，距離dl可為小於或等於約 50nm，且更具體而言介於約5 nm至約3〇 nm之間。 在一些實施例中，溶脹劑包括極性溶劑（例如醇），且可 在暴露於金屬氧化物前驅體之前施加以形成溶服結構域 β 126。在其他實施例中，溶脹劑可僅包含金屬氧化物前驅 體124’或可包含溶劑（例如極性溶劑）與金屬氧化物前驅體 124之混合物，且可選擇性溶解或f透結構域叫圖而基 本不溶解或基本不穿透基質12〇。金屬氧化物前驅體124可 為能夠選擇性浸潰結構域118之含有金屬的化合物，例如 陽離子金屬、金屬醇鹽、或金屬鹽(例如，金屬齒化物 作為非限制性實例，金屬氧化物前驅體124可為異丙氧化 物，例如四異丙氧基鈦（c丨2H28〇4Ti)、原矽酸四乙酯 (TEOS)、或聚（二甲基矽氧烷）（_^溶劑可為能夠溶 144259.doc 201026596 脹或潤濕結構域118(圖2)而基本不潤濕或基本不溶脹基質 120的液體、氣體、或蒸氣。溶劑可包含（例如）極性有機溶 劑（例如醇）或水、或其組合。若結構域118係自親水性聚合 物^成且基質12 0係自疏水性聚合物形成，則極性溶劑可 穿透親水性聚合物而基本不穿透疏水性聚合物。 作為非限制性實例，可將自組裝膜116(圖2)浸泡於溶劑 中以使結構域118打開並溶脹以形成溶脹結構域126，.如圖 3中所示。此後，溶脹結構域126中之聚合物材料可在該浸 泡擴展形式中發生交聯。最終，溶脹結構域126可暴露於 氧化物前驅體124。藉由在形成溶脹結構域126後使聚合物 材料交聯，可基本減少或防止自溶脹發生壓曲或起皺。 此外，可將包含金屬氧化物前驅體124之溶脹劑以體積 比率為約2:1之醇（例如甲醇、乙醇或異丙醇）與四異丙氧基 鈦的混合物形式施加至自組裝膜116上。作為另一非限制 性實例，溶脹劑可為溶於溶劑中之聚（二甲基矽氧烷），可 藉由（例如）旋轉澆鑄將其施加至結構域118上，且可將其加 熱至約80°C並浸泡至少6小時以選擇性穿透結構域丨18。 在其他實施例中，溶脹劑可包含純金屬氧化物前驅體 124(例如，原矽酸四乙酯），可在缺乏另一溶劑下將其施加 至自組裝膜116上。與自組裝膜116接觸後，溶脹劑之金屬 氧化物前驅體124可被吸收至結構域118(圖2)中，進而形成 經金屬氧化物前驅體124浸潰之溶脹結構域126。可將自組 裝膜116暴露於金屬氧化物前驅體124中足夠時間量以使金 屬氧化物前驅體124浸潰結構域118，例如，約3 〇分鐘至約 144259.doc -16- 201026596 5小時，且更具體而言約！小時。形成溶服結構域126後， 可視需要使用包含另一溶劑（例如，極性有機溶劑或水）之 溶液清洗半導體結構100。
仍參照圖3，可將溶脹結構域〖26暴露於氧化劑（由方向 箭頭128表示），氧化劑將溶脹結構域126内之金屬氧化物 前驅體124轉化成金屬氧化物（未圖示）。氧化劑128可為（例 如）二風、氧鐵1、一氧化氮、水、四氧化二氮、臭氧或其 組合。作為非限制性實例’可在密封室中將金屬氧化物前 驅體124暴露於氧化劑128中達一介於約丨分鐘至約儿小時 之間、且更具體而言約16小時的時間長度。作為非限制性 實例，在金屬氧化物前驅體124係四異丙氧基鈦時，可在 反應室中向溶脹結構域126施加水蒸氣約16小時以形成二 氧化鈦。作為另-非限制性實例，在金屬氧化物前驅體 124係原石夕酸四乙醋時’可在反應室中向溶脹結構域i織 加水蒸氣約16小時以形成二氧化矽。 如圖4中所示，在一些實施例中，可實施乾式㈣製程 (例如，反應性離子蝕刻（RIE)、電漿蝕刻製程、反應性離 子束蝕刻製程、或化學輔助離子束蝕刻製程）以自半導體 結構100去除基質12〇之-部分，從而留下金屬氧化物結構 130。蝕刻後可保留基質120之一部分以形成每一金屬氧化 物結構m之下部區域131。可實施乾式_製程以使每— 金屬氧化物結構13〇皆可具有低於絕緣材料1〇8之表面的上 表面且可包含含有基質120的區域131。作為非限制性實 例’若基質12G係聚苯乙烯，則可使用氡氣作為姓刻劑實 144259.doc 17 201026596 施各向異性反應性離子（亦即，電漿）蝕刻製程以去除聚苯 乙烯。乾式蝕刻可視需要去除殘留於溶脹結構域126中之 聚合物材料及介面材料122的至少一部分。 作為去除基質120及視需要殘留於溶脹結構域126中之聚 合物材料及介面材料122的結果，橫向間隔之金屬氧化物 結構130之圖案132可保留於半導體結構1〇〇之表面上。金 屬乳化物結構130可包含金屬氧化物材料。金屬氧化物結 構130彼此間的橫向間距為距離d2(亦即，金屬氧化物結構 130之間之中心-至-中心距離），其可為約距離dl(亦即，圖 3中所示溶脹結構域之中心-至-中心距離）的一半。絕緣材 料108之一部分可經由每一金屬氧化物結構13〇間之孔134 暴露。圖5係圖4之半導體結構1〇〇的俯視圖。 此外，可使用習用煅燒製程於反應性環境氣體（例如氧 氣或氨氣）中去除基質120之一部分以去除剩餘有機殘餘 物。相較於溶脹結構域126(圖3)，可稠化或硬化所得金屬 氧化物結構130。除實施蝕刻製程以去除基質12〇之外或作 為另一替代方式，可實施習用烺燒製程以自溶脹結構域 126、基質120、及介面材料丨22中去除剩餘聚合物材料。 可藉由（例如）將半導體結構100暴露於聚合物材料之降解溫 度或高於此溫度之溫度來實施煅燒製程。作為非限制性實 例，可將半導體結構100在真空或惰性氛圍（例如氬或氮氣） 下暴露於介於約300°C至約45(TC之間的溫度。作為另一非 限制性實例，可將半導體結構1〇〇在介於約751至約95艺 之間的溫度下暴露於臭氧中。所得半導體結構ι〇〇包含橫 144259.doc • 18 · 201026596 向間隔之金屬氧化物結構（未圖示），其可為與圖4中所示金 屬氧化物結構m相似的結構。形成金屬氧化物結構⑽與 陣列117之結構域U8(圖2)及經金屬氧化物浸潰之溶腰結構 域126(圖3)相比可改善下伏材料上的蝕刻選擇性。以此方 式，於自組裝膜116之特定區域（圖2)中選擇性沈積金屬氧 化物可用於形成特徵尺寸小於或等於3〇nm的蝕刻遮罩。 參照圖6,因下伏材料對於金屬氧化物結構13〇而言可選 擇性蝕刻，故可利用（例如）習用蝕刻技術使用金屬氧化物 ❹ 結構U0作為遮罩來圖案化下伏材料。作為非限制性實 例，金屬氧化物結構130之間的孔134可暴露絕緣材料1〇8 之表面136。可使用（例如）乾式蝕刻製程去除絕緣材料 108。可根據用作絕緣材料ι〇8及金屬氧化物結構13〇之材 料選擇用於去除暴露於孔134間且對金屬氧化物結構13〇具 有選擇性之絕緣材料108之蝕刻劑的具體組成。作為非限 制性實例’若絕緣材料1 係二氧化矽，則可使用習用乾 式蝕刻製程來選擇性去除絕緣材料1 〇8而並不去除金屬氧
W 化物結構130，從而暴露下伏半導電材料106。 去除絕緣材料108之暴露部分後，可使用乾式電漿反應 性離子蝕刻（RIE)製程相對於金屬氧化物結構130選擇性去 除經由孔134暴露之半導電材料106的一部分。隨後，可使 用（例如）乾式電漿反應性離子蝕刻（RIE)製程去除經由孔 134暴露之下伏介電材料1〇4。可使用單一乾式蝕刻製程或 多個乾式蝕刻製程去除經由孔134暴露之半導電材料106及 介電材料104。 144259.doc •19· 201026596 下列實例用以更為詳盡地闡釋本發明之實施^該等實 例不應理解為對本發明範圍具有排他性或窮盡性。 實例 在每一實例中，使用包含在二氧化矽材料中之溝槽内形 成之自組裝膜的試樣。為形成試樣，使用習用沈積製程及 圖案化製程在位於多晶矽基板上且與其接觸之二氧化矽材 料中形成寬度為約200 nm的複數個溝槽。將聚苯乙烯_嵌 段-聚乙烯基吡啶嵌段（PS_b_PVP)共聚物材料旋轉澆铸至二 氧化矽材料中之複數個溝槽上以填充每一溝槽。然後將 ps-b-pvp嵌段共聚物加熱至約20(rc之溫度以將ps_b pvp 退火成自組裝膜，該自組裝膜包含在每一複數個溝槽内由 聚苯乙烯（PS)基質包圍的有序聚乙烯基。比啶（PVP)結構 域。每一有序PVP結構域可具有約20 0111之寬度。 實例1 在將PS-b-PVP嵌段共聚物材料退火後，將試樣在約25ΐ： 之溫度下及空氣環境中於原矽酸四乙酯中浸潰約2小時， 同時原矽酸四乙酯被吸收至PVP嵌段聚合物中而基本不會 被吸收至PS基質中’此使得PVP嵌段聚合物溶脹。 使用旋轉去除（spin-off)製程在約3000 RPM下實施約3分 鐘自試樣中去除過量原矽酸四乙酯（亦即，未吸收至PVP嵌 段聚合物中的原矽酸四乙酯）。在約70。(：之溫度下於去離 子水浴中將PVP嵌段聚合物内之原矽酸四乙酯浸潰並攪拌 約10分鐘以形成二氧化石夕線。 實施快速熱退火以產生二氧化矽線，在約85°c之溫度下 144259.doc -20- 201026596 露於臭氧中約10分鐘且隨後實施氧
將該等二氧化矽線暴 漿蝕刻製程約20秒。 實例2 對PS b PVP嵌段共聚物材料進行退火後，將試樣置於包 含2體積份數乙醇與1體積份數四（異丙氧基）鈦之混合物的 /奋液中約1小時後，將自組裝膜暴露於可穿透pVp喪段 共聚物而基本不穿透Ps基質的乙醇/四（異丙氧基）鈦溶液 中，從而使得有序PVP結構域發生溶脹。
暴露於乙醇/四（異丙氧基）鈦溶液後，使用乙醇沖洗自組 裝膜以去除殘餘聚合物材料並進行空氣乾燥◊然後在約 2 5 C之溫度下將試樣暴露於水蒸氣中約丨6小時，此使得有 序PVP結構域内之四（異丙氧基）鈦轉化成氧化鈦。 使用氧氣在約20 seem之流速、50 m托之壓力、約34瓦 下實施反應性離子餘刻製程約120秒以自試樣中去除ps。 為去除殘餘物並顯現氧化鈥線，使用四氟甲烷（Cf4)氣體 在約100 seem之流速下實施蝕刻製程。圖7係展示其上面 溝槽204内具有二氧化鈦線202之試樣200之俯視圖的SEM 圖像。每一二氧化鈦線202皆與溝槽204之側壁206水平對 準。 實例3 退火後，將試樣在約24.0°C下暴露於原矽酸四乙酯溶液 中達約1小時以使原矽酸四乙酯能夠選擇性穿透PVP結構 域。然後將試樣在約60.〇°C之溫度下於密封反應室中暴露 於水蒸氣中達約16小時。暴露於水蒸氣後’ PVP結構域内 144259.doc -21 - 201026596 之TEOS已轉化成二氧化矽以在溝槽中形成複數個二氧化 矽線。 使用氧氣在約20 seem之流速、5〇 m托之壓力、約34瓦 下實施反應性離子蝕刻製程達約12〇秒以自試樣中去除 PS ’從而顯現二氧化矽線。 實例3 對PS b-PVP嵌段共聚物材料進行退火後，向自組裝膜施 加原矽酸四乙醋層達約2小時以使原矽酸四乙醋能夠穿透 PVP結構域。藉由在約3000 rpm下旋轉試樣約3秒來去除多參 餘原矽酸四乙酯。去除原矽酸四乙酯後，立即將試樣在約 70.0 C之溫度下浸潰於水中保持約1〇分鐘。 將試樣乾燥並暴露於包含10%臭氧/氧氣之蒸氣流中，且 將其加熱至約85.0。(：之溫度保持約1〇分鐘。將試樣乾燥並 在約100 m之壓力、約300瓦下暴露於氧電漿中達約2〇秒。 使用氧電漿處理後，在PVP結構域中顯現二氧化矽線。 儘管易於對本發明作出各種修改及替代形式但其特定 實施例以實例方式顯示於圖式中並詳細闡述於本文中。然⑩ 而，應瞭解，本發明並不限定於所揭示之具體形式。而 疋，本發明涵蓋屬於由下列隨附申請專利範圍及其合法等 效物界定之本發明範圍内的所有修改、改變及替代形式。 【圖式簡單說明】 圖1-4係顯示可用於製造半導體結構中之金屬氧化物結 構之方法實施例的部分剖視圖； 圖5係圖4中所不半導體結構之實施例的俯視平面圖； 144259.doc •22- 201026596 圖6係顯示利用諸如使用圖I-4中所示方法製造之彼等金 屬氧化物結構之圖案化方法實施例的部分剖視圖；且 圖7係展示使用本發明實施例在半導體結構上形成之金 屬氧化物線之俯視平面圖的掃描電子顯微圖片。 【主要元件符號說明】 ' 100 半導體結構 102 基板 104 介電材料 ❹ 106 半導電材料 108 絕緣材料 110 溝槽 111 下表面 112 113 嵌段共聚物材料 側壁 114 表面 116 自組裝膜 117 有序陣列 118 有序結構域 120 基質 122 介面材料 124 125 金屬氧化物前驅體 轴 126 溶脹結構域 130 金屬氧化物結構 144259.doc -23- 201026596 131 區域 132 圖案 134 孔 136 表面 200 試樣 202 二氧化鈦線 204 溝槽 206 側壁 144259.doc

Claims (1)

  1. 201026596 七、申請專利範圍： 1. 一種形成金屬氧化物結構之方法，其包括： 向上覆於基板上之材料中之至少一個溝槽施加包括至 少兩個實質上彼此不混溶之聚合嵌段的材料；- 使該材料退火以形成包括重複結構域之膜，該等重複 結構域包括該等聚合嵌段中之至少一者且為包括該等聚 合嵌段中之至少另一者之基質包圍； 將該膜暴露於包括至少一種金屬氧化物前驅體之溶脹 β 劑中；及 氧化該金屬氧化物前驅體以形成金屬氧化物。 2. 如印求項1之方法，其中施加包括至少兩個聚合嵌段之 材料包括施加包括聚乙烯基吼啶及聚苯乙烯之嵌段共聚 物。 3·如請求項1之方法，其中將該膜暴露於包括至少一種金 屬氧化物前驅體之溶脹劑中包括使用該至少一種金屬氧 φ 化物前驅體穿透該等重複結構域。 4·如：求項!之方法，其中將該膜暴露於包括至少一種金 屬氧化物4驅體之溶脹劑中包括將該膜暴露於至少一種 ， 由金屬醇鹽、異丙氧化物、及金屬鹽組成之群的金 屬氧化物前驅體中。 5.如請求項1$古、土 之方法，其中將該膜暴露於包括至少一種金 ^物則驅體之溶脹劑中包括將該膜暴露於溶劑與至 > '一種醇鹽之混合物中。 6·如請求項5之方# . I万法，其中將該膜暴露於至少一種金屬氧 144259.doc 201026596 化物前驅體中包括將該膜暴露於乙醇與四異丙氧基鈦之 混合物中。 7. 如請求項6之方法，其中氧化該金屬氧化物前驅體以形 成金屬氧化物包括將四異丙氧基鈦氧化成二氧化鈦。 8. 如請求項1之方法，其中將該膜暴露於溶脹劑中包括將 該膜暴露於選擇性結合該等重複結構域之金屬氧化物前 驅體。 9. 如请求項1之方法，其進一步包括去除包括該等聚合嵌 段中之至少另一者之該基質。 10. —種選擇性穿透自組裝嵌段共聚物之方法，其包括： 將包括親水性聚合物及疏水性聚合物之嵌段共聚物施 加至介電材料中之至少一個溝槽中； 誘導該嵌段共聚物發生相分離以形成複數個結構域， 該等結構域包括在該至少一個溝槽内由一含有該疏水性 聚合物之基質包圍的該親水性聚合物； 使該複數個結構域與包括至少一種金屬氧化物前驅體 之溶脹劑接觸以選擇性穿透該複數個結構域；及 將該複數個結構域暴露於氧化劑中以將該金屬氧化物 刖驅體轉化成金屬氧化物。 11. 如請求項10之方法，其中誘導該嵌段共聚物發生相分離 以形成複數個結構域包括將該嵌段共聚物加熱至一處於 或高於其玻璃態轉變溫度且低於其降解溫度之溫度以形 成複數個平行於該至少一個溝槽之轴的圓柱體。 12. 如請求項1〇之方法，其中使該複數個結構域與溶脹劑接 144259.doc •2- 201026596 觸包括施加醇與至少一種金屬醇鹽前驅體之混合物。 13. 如請求項10之方法，其中將該複數個結構域暴露於氧化 劑中以將該金屬氧化物前驅體轉化成金屬氧化物包括將 該複數個結構域在約25°C之溫度下暴露於水蒸氣、臭 氧、或氧氣中的至少一者中。 14. 如請求項1〇之方法，其進一步包括將該複數個結構域及 «•亥基質加熱至至少其降解溫度之溫度以去除該親水性聚 合物及該疏水性聚合物。 參 15. 一種在基板上形成金屬氧化物圖案之方法，其包括： 將嵌段共聚物材料施加至介電材料中之至少一個溝槽 上，該嵌段共聚物材料包括至少一種親水性聚合物及至 少一種疏水性聚合物； 將該嵌段共聚物材料退火以形成與該至少一個溝槽橫 向對準且包括該至少一種可溶聚合物的複數個結構單 元，該複數個結構單元係佈置於包括該至少一種不可溶 聚合物的基質内； 9 向該複數個結構單元施加包括金屬氧化物前驅體之溶 脹劑以形成複數個經金屬氧化物前驅體浸潰之結構單 元； 將該等經金屬氧化物前驅體浸潰之結構單元暴露於至 少一種氧化劑中以氧化該金屬氧化物前驅體；及 去除該基質以形成金屬氧化物結構圖案。 16.如請求項15之方法，其中向介電材料中之至少一個溝槽 施加嵌段共聚物材料，其中至少一個溝槽具有約15 nm 144259.doc 201026596 至約50 nm之深度。 17. 如請求項15之方法’其中將包括金屬氧化物前驅體之溶 脹劑施加至該複數個結構單元以形成複數個經金屬氧化 物前驅體浸潰之結構單元包括㈣複數個結構單元與包 括四異丙氧基鈦之溶脹劑接觸達約丨小時。 18. 如請求項15之方法，其φ命q 〜， 具中向该複數個結構單元施加包括 金屬氧化物前驅體之溶脹劑包括向該複數個結構單元施 加原矽酸四乙酯達約1小時。 19·如明求項15之方法中將該等經金屬氧化物前驅體浸 潰之結構單元暴露於至少—種氧化财包括將該等經金 屬氧化物前驅體浸清之結構單元暴露於水蒸氣中達約i 分鐘至約30小時。 20.如請求項15之方法’其中將該等經金屬氧化物前驅體浸 潰之結構單元暴露於至少—種氧化劑中包括將該等經金 屬氧化物前驅體浸潰之結構單元暴露於氧氣、二氧化 氮、水、四氧化二氮、及臭氧中之至少一者中。 21.如請求項15之方法，其中去除該基質以形成金屬氧化物 結構圖案包括使用氧電漿蝕刻該基質。 22· —種圖案化半導體結構之方法，其包括： 向上覆於基板上之材料中之至少一個溝槽施加包括至 少兩個實質上不混溶聚合嵌段的共聚物材料； 將該共聚物材料退火以在該至少一個溝槽内形成複數 個結構域，每一結構域皆包括該等聚合嵌段十之至少一 者； 144259.doc 201026596 將該複數個結構域暴露於包括至少一種金屬氧化物前 驅體之溶腸劑中； 氧化該金屬氧化物前驅體以形成複數個金屬氧化物結 構；及 相對於该複數個金屬氧化物結構選擇性去除絕緣材 料。 23· —種半導體結構，其包括： 至少一個溝槽，其形成於上覆於基板上之絕緣材料 複數個、.Ό構域，其包括至少一個經金屬氧化物穿透之 聚合物嵌段且佈置於該至少—個溝槽内，每一結構域彼 此之橫向間距實質上係相同的。 24. 如請求項23之半導體結構，其中該複數個結構域中之每 一者皆包括聚乙烯基吡啶及氧化物。
    25. 如請求項23之半導體結構，其中該複數個結構域中之每 -者皆經;t位實質上平行於該至少—個溝槽之側壁。 144259.doc
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US20160163536A1 (en) 2016-06-09
KR20110086834A (ko) 2011-08-01
US9768021B2 (en) 2017-09-19
WO2010062568A3 (en) 2010-07-22
US20100102415A1 (en) 2010-04-29
CN102196991B (zh) 2014-04-30
TWI392643B (zh) 2013-04-11
US9276059B2 (en) 2016-03-01
KR101320287B1 (ko) 2013-10-23
US8669645B2 (en) 2014-03-11
US20140151843A1 (en) 2014-06-05
US20120133017A1 (en) 2012-05-31
WO2010062568A2 (en) 2010-06-03
US8097175B2 (en) 2012-01-17

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