TW200814369A - III nitride compound semiconductor laminated structure - Google Patents

III nitride compound semiconductor laminated structure Download PDF

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Publication number
TW200814369A
TW200814369A TW096116525A TW96116525A TW200814369A TW 200814369 A TW200814369 A TW 200814369A TW 096116525 A TW096116525 A TW 096116525A TW 96116525 A TW96116525 A TW 96116525A TW 200814369 A TW200814369 A TW 200814369A
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TW
Taiwan
Prior art keywords
layer
nitride compound
compound semiconductor
group iii
iii nitride
Prior art date
Application number
TW096116525A
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English (en)
Chinese (zh)
Other versions
TWI352436B (https=
Inventor
Hisayuki Miki
Hiromitsu Sakai
Kenzo Hanawa
Yasunori Yokoyama
Yasumasa Sasaki
Hiroaki Kaji
Original Assignee
Showa Denko Kk
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Publication of TW200814369A publication Critical patent/TW200814369A/zh
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Publication of TWI352436B publication Critical patent/TWI352436B/zh

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2913—Materials being Group IIB-VIA materials
    • H10P14/2914—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type

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  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
TW096116525A 2006-05-10 2007-05-09 III nitride compound semiconductor laminated structure TW200814369A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2006131530 2006-05-10
JP2006231862 2006-08-29

Publications (2)

Publication Number Publication Date
TW200814369A true TW200814369A (en) 2008-03-16
TWI352436B TWI352436B (https=) 2011-11-11

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
TW096116525A TW200814369A (en) 2006-05-10 2007-05-09 III nitride compound semiconductor laminated structure

Country Status (7)

Country Link
US (1) US8148712B2 (https=)
EP (1) EP2019437B1 (https=)
JP (1) JPWO2007129773A1 (https=)
KR (1) KR101066135B1 (https=)
CN (1) CN101438429B (https=)
TW (1) TW200814369A (https=)
WO (1) WO2007129773A1 (https=)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9515292B2 (en) 2011-12-28 2016-12-06 Joled Inc. Manufacturing method of organic EL element
TWI732812B (zh) * 2016-01-07 2021-07-11 日商杰富意礦物股份有限公司 氮化鋁單結晶

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JP2008053665A (ja) * 2006-08-28 2008-03-06 Kanagawa Acad Of Sci & Technol 半導体基板の製造方法、半導体基板の製造装置及び半導体基板
JP2009123718A (ja) * 2007-01-16 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
US8652948B2 (en) * 2007-11-21 2014-02-18 Mitsubishi Chemical Corporation Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
JP5272390B2 (ja) * 2007-11-29 2013-08-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2009155672A (ja) * 2007-12-25 2009-07-16 Showa Denko Kk Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体製造装置、ｉｉｉ族窒化物半導体及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP5526478B2 (ja) * 2008-01-16 2014-06-18 豊田合成株式会社 光源、発光装置および表示装置
WO2009096270A1 (ja) * 2008-01-31 2009-08-06 Canon Anelva Corporation ＡｌＮヘテロエピタキシャル結晶体とその製造方法、該結晶体を用いてなるＩＩＩ族窒化物膜用下地基板、発光素子、表面弾性波デバイス、及びスパッタリング装置
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EP2565928A4 (en) * 2010-04-28 2013-12-04 Ngk Insulators Ltd EPITACTIC SUBSTRATE AND METHOD FOR PRODUCING THE EPITACTIC SUBSTRATE
CN103109351A (zh) * 2010-09-10 2013-05-15 日本碍子株式会社 半导体元件用外延基板、半导体元件用外延基板的制造方法、以及半导体元件
JP5361925B2 (ja) * 2011-03-08 2013-12-04 株式会社東芝 半導体発光素子およびその製造方法
CN102299169A (zh) * 2011-06-13 2011-12-28 协鑫光电科技（张家港）有限公司 便于去除蓝宝石衬底的外延结构
DE102011114671A1 (de) 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102011114670B4 (de) * 2011-09-30 2026-03-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
JP5880383B2 (ja) * 2012-10-11 2016-03-09 豊田合成株式会社 半導体発光素子、発光装置
US9202906B2 (en) 2013-03-14 2015-12-01 Northrop Grumman Systems Corporation Superlattice crenelated gate field effect transistor
JP2014123765A (ja) * 2014-02-27 2014-07-03 Sumitomo Electric Ind Ltd ウエハ生産物、窒化ガリウム系半導体光素子
JP6605345B2 (ja) * 2016-02-01 2019-11-13 スタンレー電気株式会社 積層体を構成する元素割合の算出方法
JP2019142771A (ja) * 2019-06-06 2019-08-29 Ｊｆｅミネラル株式会社 窒化アルミニウムウェーハの製造方法
EP4052899A4 (en) * 2019-10-31 2023-01-18 Tosoh Corporation MULTI-LAYER FILM STRUCTURE AND METHOD OF MAKING THEREOF
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9515292B2 (en) 2011-12-28 2016-12-06 Joled Inc. Manufacturing method of organic EL element
TWI584510B (zh) * 2011-12-28 2017-05-21 Joled Inc Method for manufacturing organic EL element
TWI732812B (zh) * 2016-01-07 2021-07-11 日商杰富意礦物股份有限公司 氮化鋁單結晶

Also Published As

Publication number Publication date
EP2019437A1 (en) 2009-01-28
US20090146161A1 (en) 2009-06-11
TWI352436B (https=) 2011-11-11
KR101066135B1 (ko) 2011-09-20
CN101438429A (zh) 2009-05-20
KR20080098550A (ko) 2008-11-10
EP2019437A4 (en) 2014-05-07
US8148712B2 (en) 2012-04-03
JPWO2007129773A1 (ja) 2009-09-17
EP2019437B1 (en) 2018-07-11
CN101438429B (zh) 2011-04-27
WO2007129773A1 (ja) 2007-11-15

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