KR101066135B1 - Ⅲ족 질화물 화합물 반도체 적층 구조체 - Google Patents

Ⅲ족 질화물 화합물 반도체 적층 구조체 Download PDF

Info

Publication number
KR101066135B1
KR101066135B1 KR1020087023994A KR20087023994A KR101066135B1 KR 101066135 B1 KR101066135 B1 KR 101066135B1 KR 1020087023994 A KR1020087023994 A KR 1020087023994A KR 20087023994 A KR20087023994 A KR 20087023994A KR 101066135 B1 KR101066135 B1 KR 101066135B1
Authority
KR
South Korea
Prior art keywords
layer
compound semiconductor
nitride compound
group iii
iii nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
KR1020087023994A
Other languages
English (en)
Korean (ko)
Other versions
KR20080098550A (ko
Inventor
히사유키 미키
히로미츠 사카이
켄조 하나와
야스노리 요코야마
야스마사 사사키
히로아키 카지
Original Assignee
쇼와 덴코 가부시키가이샤
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 쇼와 덴코 가부시키가이샤 filed Critical 쇼와 덴코 가부시키가이샤
Publication of KR20080098550A publication Critical patent/KR20080098550A/ko
Application granted granted Critical
Publication of KR101066135B1 publication Critical patent/KR101066135B1/ko
Assigned to 도요다 고세이 가부시키가이샤 reassignment 도요다 고세이 가부시키가이샤 권리의 전부이전등록 Assignors: 쇼와 덴코 가부시키가이샤
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C23C16/303—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/02—Pretreatment of the material to be coated
    • C23C16/0272—Deposition of sub-layers, e.g. to promote the adhesion of the main coating
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/22—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using physical deposition, e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2905—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2913—Materials being Group IIB-VIA materials
    • H10P14/2914—Oxides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2921—Materials being crystalline insulating materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3216—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3416—Nitrides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Led Devices (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Vapour Deposition (AREA)
  • Chemical Vapour Deposition (AREA)
KR1020087023994A 2006-05-10 2007-05-08 Ⅲ족 질화물 화합물 반도체 적층 구조체 Expired - Fee Related KR101066135B1 (ko)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2006131530 2006-05-10
JPJP-P-2006-00131530 2006-05-10
JPJP-P-2006-00231862 2006-08-29
JP2006231862 2006-08-29

Publications (2)

Publication Number Publication Date
KR20080098550A KR20080098550A (ko) 2008-11-10
KR101066135B1 true KR101066135B1 (ko) 2011-09-20

Family

ID=38667877

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020087023994A Expired - Fee Related KR101066135B1 (ko) 2006-05-10 2007-05-08 Ⅲ족 질화물 화합물 반도체 적층 구조체

Country Status (7)

Country Link
US (1) US8148712B2 (https=)
EP (1) EP2019437B1 (https=)
JP (1) JPWO2007129773A1 (https=)
KR (1) KR101066135B1 (https=)
CN (1) CN101438429B (https=)
TW (1) TW200814369A (https=)
WO (1) WO2007129773A1 (https=)

Families Citing this family (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008053665A (ja) * 2006-08-28 2008-03-06 Kanagawa Acad Of Sci & Technol 半導体基板の製造方法、半導体基板の製造装置及び半導体基板
JP2009123718A (ja) * 2007-01-16 2009-06-04 Showa Denko Kk Ｉｉｉ族窒化物化合物半導体素子及びその製造方法、ｉｉｉ族窒化物化合物半導体発光素子及びその製造方法、並びにランプ
US8652948B2 (en) * 2007-11-21 2014-02-18 Mitsubishi Chemical Corporation Nitride semiconductor, nitride semiconductor crystal growth method, and nitride semiconductor light emitting element
JP5272390B2 (ja) * 2007-11-29 2013-08-28 豊田合成株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2009155672A (ja) * 2007-12-25 2009-07-16 Showa Denko Kk Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、ｉｉｉ族窒化物半導体製造装置、ｉｉｉ族窒化物半導体及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP5526478B2 (ja) * 2008-01-16 2014-06-18 豊田合成株式会社 光源、発光装置および表示装置
WO2009096270A1 (ja) * 2008-01-31 2009-08-06 Canon Anelva Corporation ＡｌＮヘテロエピタキシャル結晶体とその製造方法、該結晶体を用いてなるＩＩＩ族窒化物膜用下地基板、発光素子、表面弾性波デバイス、及びスパッタリング装置
KR101020958B1 (ko) * 2008-11-17 2011-03-09 엘지이노텍 주식회사 산화갈륨기판 제조방법, 발광소자 및 발광소자 제조방법
DE102009060749B4 (de) * 2009-12-30 2021-12-30 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Optoelektronischer Halbleiterchip
EP2565928A4 (en) * 2010-04-28 2013-12-04 Ngk Insulators Ltd EPITACTIC SUBSTRATE AND METHOD FOR PRODUCING THE EPITACTIC SUBSTRATE
CN103109351A (zh) * 2010-09-10 2013-05-15 日本碍子株式会社 半导体元件用外延基板、半导体元件用外延基板的制造方法、以及半导体元件
JP5361925B2 (ja) * 2011-03-08 2013-12-04 株式会社東芝 半導体発光素子およびその製造方法
CN102299169A (zh) * 2011-06-13 2011-12-28 协鑫光电科技（张家港）有限公司 便于去除蓝宝石衬底的外延结构
DE102011114671A1 (de) 2011-09-30 2013-04-04 Osram Opto Semiconductors Gmbh Verfahren zur Herstellung eines optoelektronischen Halbleiterchips und optoelektronischer Halbleiterchip
DE102011114670B4 (de) * 2011-09-30 2026-03-19 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Halbleiterchips
US9515292B2 (en) 2011-12-28 2016-12-06 Joled Inc. Manufacturing method of organic EL element
JP5880383B2 (ja) * 2012-10-11 2016-03-09 豊田合成株式会社 半導体発光素子、発光装置
US9202906B2 (en) 2013-03-14 2015-12-01 Northrop Grumman Systems Corporation Superlattice crenelated gate field effect transistor
JP2014123765A (ja) * 2014-02-27 2014-07-03 Sumitomo Electric Ind Ltd ウエハ生産物、窒化ガリウム系半導体光素子
JP2017122028A (ja) * 2016-01-07 2017-07-13 Ｊｆｅミネラル株式会社 窒化アルミニウム単結晶
JP6605345B2 (ja) * 2016-02-01 2019-11-13 スタンレー電気株式会社 積層体を構成する元素割合の算出方法
JP2019142771A (ja) * 2019-06-06 2019-08-29 Ｊｆｅミネラル株式会社 窒化アルミニウムウェーハの製造方法
EP4052899A4 (en) * 2019-10-31 2023-01-18 Tosoh Corporation MULTI-LAYER FILM STRUCTURE AND METHOD OF MAKING THEREOF
CN112756006B (zh) * 2019-11-06 2022-03-22 中国科学院物理研究所 氮化钛/氮化镓异质结构材料及其制备方法和应用

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354846A (ja) * 1996-01-19 1999-12-24 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JP2005244202A (ja) * 2004-01-26 2005-09-08 Showa Denko Kk Ｉｉｉ族窒化物半導体積層物

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (ja) 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> 化合物半導体薄膜の成長方法
JP3026087B2 (ja) 1989-03-01 2000-03-27 豊田合成株式会社 窒化ガリウム系化合物半導体の気相成長方法
JPH088217B2 (ja) 1991-01-31 1996-01-29 日亜化学工業株式会社 窒化ガリウム系化合物半導体の結晶成長方法
EP0817283A1 (en) 1996-01-19 1998-01-07 Matsushita Electric Industrial Co., Ltd. Gallium nitride compound semiconductor light emitting device and process for producing gallium nitride compound semiconductor
JP3700492B2 (ja) 1999-09-21 2005-09-28 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子
JP3440873B2 (ja) 1999-03-31 2003-08-25 豊田合成株式会社 Ｉｉｉ族窒化物系化合物半導体素子の製造方法
US6713789B1 (en) * 1999-03-31 2004-03-30 Toyoda Gosei Co., Ltd. Group III nitride compound semiconductor device and method of producing the same
US7501023B2 (en) * 2001-07-06 2009-03-10 Technologies And Devices, International, Inc. Method and apparatus for fabricating crack-free Group III nitride semiconductor materials
JP3656606B2 (ja) 2002-02-15 2005-06-08 昭和電工株式会社 Ｉｉｉ族窒化物半導体結晶の製造方法
JP3991823B2 (ja) 2002-09-04 2007-10-17 昭和電工株式会社 Ｉｉｉ族窒化物半導体結晶、その製造方法、ｉｉｉ族窒化物半導体エピタキシャルウェーハ
JP2005210091A (ja) 2003-12-22 2005-08-04 Showa Denko Kk Ｉｉｉ族窒化物半導体素子およびそれを用いた発光素子
EP1709670B1 (en) * 2004-01-26 2012-09-12 Showa Denko K.K. Group iii nitride semiconductor multilayer structure
TWI258873B (en) * 2004-01-26 2006-07-21 Showa Denko Kk Group III nitride semiconductor multilayer structure

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11354846A (ja) * 1996-01-19 1999-12-24 Matsushita Electric Ind Co Ltd 窒化ガリウム系化合物半導体発光素子及び窒化ガリウム系化合物半導体の製造方法
JP2005244202A (ja) * 2004-01-26 2005-09-08 Showa Denko Kk Ｉｉｉ族窒化物半導体積層物

Also Published As

Publication number Publication date
EP2019437A1 (en) 2009-01-28
US20090146161A1 (en) 2009-06-11
TWI352436B (https=) 2011-11-11
TW200814369A (en) 2008-03-16
CN101438429A (zh) 2009-05-20
KR20080098550A (ko) 2008-11-10
EP2019437A4 (en) 2014-05-07
US8148712B2 (en) 2012-04-03
JPWO2007129773A1 (ja) 2009-09-17
EP2019437B1 (en) 2018-07-11
CN101438429B (zh) 2011-04-27
WO2007129773A1 (ja) 2007-11-15

Similar Documents

Publication Publication Date Title
KR101066135B1 (ko) Ⅲ족 질화물 화합물 반도체 적층 구조체
KR101151167B1 (ko) Ⅲ족 질화물 화합물 반도체 소자 및 그의 제조 방법, ⅲ족 질화물 화합물 반도체 발광 소자 및 그의 제조 방법, 및 램프
KR101159995B1 (ko) Ⅲ족 질화물 반도체 소자 및 그 제조 방법, ⅲ족 질화물 반도체 발광 소자 및 그 제조 방법, 및 램프
KR101067122B1 (ko) Ⅲ족 질화물 반도체의 제조 방법, ⅲ족 질화물 반도체 발광 소자의 제조 방법 및 ⅲ족 질화물 반도체 발광 소자, 및 램프
KR101268139B1 (ko) Ⅲ족 질화물 반도체 발광 소자의 제조 방법, ⅲ족 질화물 반도체 발광 소자 및 램프
JP4191227B2 (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ
KR101074178B1 (ko) Ⅲ족 질화물 화합물 반도체 발광 소자의 제조 방법, 및 ⅲ족 질화물 화합물 반도체 발광 소자, 및 램프
KR101042417B1 (ko) Ⅲ족 질화물 반도체 발광 소자 및 그의 제조 방법, 및 램프
EP2071053B1 (en) Filming method for iii-group nitride semiconductor laminated structure
KR20110045056A (ko) Ⅲ족 질화물 반도체 발광 소자의 제조 방법, ⅲ족 질화물 반도체 발광 소자 및 램프
KR20090048590A (ko) Ⅲ족 질화물 화합물 반도체 발광 소자의 제조 방법, 및 ⅲ족 질화물 화합물 반도체 발광 소자와 램프
KR20090074092A (ko) Ⅲ족 질화물 반도체 발광 소자의 제조 방법, 및 ⅲ족 질화물 반도체 발광 소자, 및 램프
CN101578715A (zh) Ⅲ族氮化物化合物半导体元件及其制造方法、ⅲ族氮化物化合物半导体发光元件及其制造方法和灯
JP2008124060A (ja) Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ
JP2009161434A (ja) Ｉｉｉ族窒化物半導体結晶の製造方法及びｉｉｉ族窒化物半導体結晶
JP2009016505A (ja) Ｉｉｉ族窒化物化合物半導体発光素子
JP2008226868A (ja) Ｉｉｉ族窒化物化合物半導体積層構造体
JP4974635B2 (ja) Ｉｉｉ族窒化物化合物半導体積層構造体の成膜方法
JP2008294449A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法及びｉｉｉ族窒化物半導体発光素子並びにランプ
JP2008198705A (ja) Ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2008098245A (ja) Ｉｉｉ族窒化物化合物半導体積層構造体の成膜方法
JP5261969B2 (ja) Ｉｉｉ族窒化物化合物半導体発光素子
JP2008177523A (ja) Ｉｉｉ族窒化物化合物半導体発光素子の製造方法、及びｉｉｉ族窒化物化合物半導体発光素子、並びにランプ

Legal Events

Date Code Title Description
A201 Request for examination
PA0105 International application

St.27 status event code: A-0-1-A10-A15-nap-PA0105

PA0201 Request for examination

St.27 status event code: A-1-2-D10-D11-exm-PA0201

PG1501 Laying open of application

St.27 status event code: A-1-1-Q10-Q12-nap-PG1501

P22-X000 Classification modified

St.27 status event code: A-2-2-P10-P22-nap-X000

E902 Notification of reason for refusal
PE0902 Notice of grounds for rejection

St.27 status event code: A-1-2-D10-D21-exm-PE0902

P11-X000 Amendment of application requested

St.27 status event code: A-2-2-P10-P11-nap-X000

P13-X000 Application amended

St.27 status event code: A-2-2-P10-P13-nap-X000

E701 Decision to grant or registration of patent right
PE0701 Decision of registration

St.27 status event code: A-1-2-D10-D22-exm-PE0701

GRNT Written decision to grant
PR0701 Registration of establishment

St.27 status event code: A-2-4-F10-F11-exm-PR0701

PR1002 Payment of registration fee

St.27 status event code: A-2-2-U10-U12-oth-PR1002

Fee payment year number: 1

PG1601 Publication of registration

St.27 status event code: A-4-4-Q10-Q13-nap-PG1601

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R14-asn-PN2301

FPAY Annual fee payment

Payment date: 20140825

Year of fee payment: 4

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 4

FPAY Annual fee payment

Payment date: 20150820

Year of fee payment: 5

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 5

FPAY Annual fee payment

Payment date: 20160818

Year of fee payment: 6

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 6

FPAY Annual fee payment

Payment date: 20170823

Year of fee payment: 7

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 7

FPAY Annual fee payment

Payment date: 20180816

Year of fee payment: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 8

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 9

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 10

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 11

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 12

PN2301 Change of applicant

St.27 status event code: A-5-5-R10-R13-asn-PN2301

St.27 status event code: A-5-5-R10-R11-asn-PN2301

PR1001 Payment of annual fee

St.27 status event code: A-4-4-U10-U11-oth-PR1001

Fee payment year number: 13

R18-X000 Changes to party contact information recorded

St.27 status event code: A-5-5-R10-R18-oth-X000

PC1903 Unpaid annual fee

St.27 status event code: A-4-4-U10-U13-oth-PC1903

Not in force date: 20240915

Payment event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

P22-X000 Classification modified

St.27 status event code: A-4-4-P10-P22-nap-X000

PC1903 Unpaid annual fee

St.27 status event code: N-4-6-H10-H13-oth-PC1903

Ip right cessation event data comment text: Termination Category : DEFAULT_OF_REGISTRATION_FEE

Not in force date: 20240915