TW200307186A - Method for removing photoresist - Google Patents

Method for removing photoresist Download PDF

Info

Publication number
TW200307186A
TW200307186A TW092109758A TW92109758A TW200307186A TW 200307186 A TW200307186 A TW 200307186A TW 092109758 A TW092109758 A TW 092109758A TW 92109758 A TW92109758 A TW 92109758A TW 200307186 A TW200307186 A TW 200307186A
Authority
TW
Taiwan
Prior art keywords
photoresist
substrate
dielectric layer
peeling
water
Prior art date
Application number
TW092109758A
Other languages
English (en)
Chinese (zh)
Other versions
TWI304525B (https=
Inventor
Shigeru Yokoi
Kazumasa Wakiya
Takayuki Haraguchi
Original Assignee
Tokyo Ohka Kogyo Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Ohka Kogyo Co Ltd filed Critical Tokyo Ohka Kogyo Co Ltd
Publication of TW200307186A publication Critical patent/TW200307186A/zh
Application granted granted Critical
Publication of TWI304525B publication Critical patent/TWI304525B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor
    • G03F7/422—Stripping or agents therefor using liquids only
    • G03F7/425—Stripping or agents therefor using liquids only containing mineral alkaline compounds; containing organic basic compounds, e.g. quaternary ammonium compounds; containing heterocyclic basic compounds containing nitrogen
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/42—Stripping or agents therefor

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
TW092109758A 2002-04-26 2003-04-25 Method for removing photoresist TW200307186A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2002125471 2002-04-26
JP2002308993A JP3516446B2 (ja) 2002-04-26 2002-10-23 ホトレジスト剥離方法

Publications (2)

Publication Number Publication Date
TW200307186A true TW200307186A (en) 2003-12-01
TWI304525B TWI304525B (https=) 2008-12-21

Family

ID=29272357

Family Applications (1)

Application Number Title Priority Date Filing Date
TW092109758A TW200307186A (en) 2002-04-26 2003-04-25 Method for removing photoresist

Country Status (8)

Country Link
US (5) US20050176259A1 (https=)
EP (1) EP1550912A4 (https=)
JP (1) JP3516446B2 (https=)
KR (1) KR100781925B1 (https=)
CN (1) CN1650235A (https=)
AU (1) AU2003235130A1 (https=)
TW (1) TW200307186A (https=)
WO (1) WO2003091806A1 (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402377B (zh) * 2005-08-25 2013-07-21 Dongjin Semichem Co Ltd 用於去除透明導電膜及光阻劑的剝離液組合物
TWI425324B (zh) * 2005-12-23 2014-02-01 安集微電子有限公司 可去除光阻層之組合物
TWI721833B (zh) * 2019-03-25 2021-03-11 日商松下知識產權經營股份有限公司 阻劑剝離液

Families Citing this family (70)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7364839B2 (en) * 2002-07-24 2008-04-29 Kabushiki Kaisha Toshiba Method for forming a pattern and substrate-processing apparatus
PT1664935E (pt) * 2003-08-19 2008-01-10 Mallinckrodt Baker Inc Composições de decapagem e limpeza para micro electrónica
US7384900B2 (en) * 2003-08-27 2008-06-10 Lg Display Co., Ltd. Composition and method for removing copper-compatible resist
KR100663624B1 (ko) * 2004-04-29 2007-01-02 엘지.필립스 엘시디 주식회사 액정표시장치 제조방법
JP5057647B2 (ja) 2004-07-02 2012-10-24 東京エレクトロン株式会社 半導体装置の製造方法および半導体装置の製造装置
US20060070979A1 (en) * 2004-09-17 2006-04-06 Christenson Kurt K Using ozone to process wafer like objects
JP4628209B2 (ja) * 2004-11-18 2011-02-09 花王株式会社 剥離剤組成物
JP4678673B2 (ja) * 2005-05-12 2011-04-27 東京応化工業株式会社 ホトレジスト用剥離液
CN100565337C (zh) * 2005-08-22 2009-12-02 昆明物理研究所 一种铂钛金属薄膜图形化方法
KR101221560B1 (ko) * 2005-09-02 2013-01-14 주식회사 동진쎄미켐 변성된 포토레지스트 제거를 위한 반도체 소자용 박리액조성물
US9329486B2 (en) 2005-10-28 2016-05-03 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
US20070243773A1 (en) * 2005-10-28 2007-10-18 Phenis Michael T Dynamic multi-purpose composition for the removal of photoresists and method for its use
US8263539B2 (en) * 2005-10-28 2012-09-11 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and methods for its use
US7632796B2 (en) * 2005-10-28 2009-12-15 Dynaloy, Llc Dynamic multi-purpose composition for the removal of photoresists and method for its use
KR101152139B1 (ko) * 2005-12-06 2012-06-15 삼성전자주식회사 표시 장치용 세정제 및 이를 사용하는 박막 트랜지스터표시판의 제조 방법
KR100672752B1 (ko) * 2006-01-27 2007-01-22 주식회사 바맥스 포토레지스트 제거 방법 및 이를 수행하기 위한 장치
JP5012800B2 (ja) * 2006-07-05 2012-08-29 日立化成工業株式会社 Ｃｍｐ用研磨液及び研磨方法
KR100849366B1 (ko) * 2006-08-24 2008-07-31 세메스 주식회사 기판을 처리하는 장치 및 방법
JP5018098B2 (ja) * 2007-01-19 2012-09-05 東ソー株式会社 配線工程用レジストの剥離方法
WO2008114616A1 (ja) 2007-03-16 2008-09-25 Mitsubishi Gas Chemical Company, Inc. 洗浄用組成物、半導体素子の製造方法
US7655608B2 (en) * 2007-08-03 2010-02-02 Dynaloy, Llc Reduced metal etch rates using stripper solutions containing a copper salt
US8551682B2 (en) * 2007-08-15 2013-10-08 Dynaloy, Llc Metal conservation with stripper solutions containing resorcinol
KR101463618B1 (ko) * 2008-01-14 2014-11-19 동우 화인켐 주식회사 포토레지스트 박리용 조성물 및 이를 이용한 박리 방법
TWI450052B (zh) * 2008-06-24 2014-08-21 黛納羅伊有限責任公司 用於後段製程操作有效之剝離溶液
EP2166564B1 (en) * 2008-09-19 2017-04-12 Imec Method for removing a hardened photoresist from a semiconductor substrate
WO2010127941A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
WO2010127942A1 (en) 2009-05-07 2010-11-11 Basf Se Resist stripping compositions and methods for manufacturing electrical devices
JP5836932B2 (ja) 2009-05-07 2015-12-24 ビーエーエスエフ ソシエタス・ヨーロピアＢａｓｆ Ｓｅ レジストストリッピング組成物及び電気装置を製造するための方法
US8334213B2 (en) * 2009-06-05 2012-12-18 Magic Technologies, Inc. Bottom electrode etching process in MRAM cell
KR20110028109A (ko) * 2009-09-11 2011-03-17 동우 화인켐 주식회사 세정액 조성물
CN102640275B (zh) 2009-11-30 2015-12-02 巴斯夫欧洲公司 从衬底去除本体材料层的方法以及适于该方法的化学机械抛光剂
CN102648258B (zh) 2009-11-30 2015-04-08 巴斯夫欧洲公司 从衬底去除本体材料层的方法以及适于该方法的化学机械抛光剂
SG182789A1 (en) 2010-01-29 2012-09-27 Advanced Tech Materials Cleaning agent for semiconductor provided with metal wiring
JP5702075B2 (ja) * 2010-03-26 2015-04-15 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド 銅配線半導体用洗浄剤
JP5404459B2 (ja) * 2010-02-08 2014-01-29 東京応化工業株式会社 リソグラフィー用洗浄液及び配線形成方法
TWI539493B (zh) 2010-03-08 2016-06-21 黛納羅伊有限責任公司 用於摻雜具有分子單層之矽基材之方法及組合物
KR101799591B1 (ko) * 2010-05-19 2017-12-20 동우 화인켐 주식회사 전자재료용 세정액 조성물
US20130200039A1 (en) 2010-09-08 2013-08-08 Basf Se Aqueous polishing compositions containing n-substituted diazenium dioxides and/or n'-hydroxy-diazenium oxide salts
KR101906135B1 (ko) 2010-09-08 2018-10-10 바스프 에스이 수성 연마 조성물 및 산화규소 유전체 및 폴리실리콘 필름을 함유하는 기판의 화학적 기계적 연마 방법
KR101907863B1 (ko) 2010-09-08 2018-10-15 바스프 에스이 수성 폴리싱 조성물, 및 전기적, 기계적 및 광학적 장치용 기판 재료의 화학적 기계적 폴리싱 방법
KR101907860B1 (ko) 2010-10-07 2018-10-15 바스프 에스이 수성 연마 조성물 및 패턴화 또는 비패턴화 저-ｋ 유전층을 갖는 기판의 화학적 기계적 연마 방법
EP2649144A4 (en) 2010-12-10 2014-05-14 Basf Se AQUEOUS POLISHING COMPOSITION AND METHOD FOR THE CHEMICAL-MECHANICAL POLISHING OF SUBSTRATES WITH DIELECTRIC SILICON OXIDE AND POLYSILICIUM FILMS
KR20140012660A (ko) 2011-03-11 2014-02-03 바스프 에스이 베이스 웨이퍼 관통 비아들을 형성하는 방법
KR101925272B1 (ko) 2011-03-21 2019-02-27 바스프 에스이 질소-무함유 수성 세정 조성물, 이의 제조 및 용도
FR2976290B1 (fr) 2011-06-09 2014-08-15 Jerome Daviot Composition de solutions et conditions d'utilisation permettant le retrait et la dissolution complete de resines photo-lithographiques
CN102254810A (zh) * 2011-07-05 2011-11-23 上海宏力半导体制造有限公司 半导体器件制备过程中光阻的去除方法
CN102427039A (zh) * 2011-11-02 2012-04-25 上海宏力半导体制造有限公司 光阻去除方法
JP6162711B2 (ja) * 2011-11-16 2017-07-12 フィールド アップグレーディング リミテッド アルカリ金属を使用する石油原料の改質
TWI588253B (zh) 2012-03-16 2017-06-21 巴地斯顏料化工廠 光阻剝除與清潔組合物及其製備方法與用途
JP6168271B2 (ja) 2012-08-08 2017-07-26 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法
US9158202B2 (en) 2012-11-21 2015-10-13 Dynaloy, Llc Process and composition for removing substances from substrates
US20150064911A1 (en) * 2013-08-27 2015-03-05 Tokyo Electron Limited Substrate processing method, substrate processing apparatus and storage medium
CN110225667B (zh) * 2013-09-11 2023-01-10 花王株式会社 树脂掩模层用洗涤剂组合物及电路基板的制造方法
CN104658899B (zh) * 2013-11-22 2017-11-10 中芯国际集成电路制造(上海)有限公司 一种蚀刻栅极介电层的方法
US9085542B1 (en) 2014-06-12 2015-07-21 General Electric Company Method for synthesis of N-methyl piperazine diphenolamide and related composition
TWI595332B (zh) * 2014-08-05 2017-08-11 頎邦科技股份有限公司 光阻剝離方法
US20160304815A1 (en) * 2015-04-20 2016-10-20 Intermolecular, Inc. Methods and chemical solutions for cleaning photomasks using quaternary ammonium hydroxides
US10072237B2 (en) * 2015-08-05 2018-09-11 Versum Materials Us, Llc Photoresist cleaning composition used in photolithography and a method for treating substrate therewith
KR101711808B1 (ko) 2015-12-23 2017-03-06 한국원자력연구원 세슘화합물의 제거율이 높은 전해환원공정용 연료파편 제조 방법
EP3663857A4 (en) * 2017-08-03 2020-09-09 Huaying Research Co., Ltd PHOTORESIN STRIPPING SOLUTION AND PHOTORESIN STRIPPING PROCESS
US20190103282A1 (en) * 2017-09-29 2019-04-04 Versum Materials Us, Llc Etching Solution for Simultaneously Removing Silicon and Silicon-Germanium Alloy From a Silicon-Germanium/Silicon Stack During Manufacture of a Semiconductor Device
KR102572755B1 (ko) * 2018-09-13 2023-08-30 동우 화인켐 주식회사 포토레지스트 세정액 조성물
KR102572758B1 (ko) * 2018-09-17 2023-08-30 동우 화인켐 주식회사 포토레지스트 세정액 조성물
CN113448186B (zh) * 2020-03-27 2024-05-14 长鑫存储技术有限公司 晶圆处理装置及晶圆处理方法
US11378886B2 (en) * 2020-09-29 2022-07-05 Taiwan Semiconductor Manufacturing Company, Ltd. Method for removing resist layer, and method of manufacturing semiconductor
KR102246300B1 (ko) * 2021-03-19 2021-04-30 제이엔에프 주식회사 반도체 및 디스플레이 제조공정용 세정제 조성물
CN113589662B (zh) * 2021-07-30 2022-07-12 浙江奥首材料科技有限公司 一种组合物、剥离液及其在剥离光刻胶或光刻胶残余物中的应用和剥离方法
CN115469516B (zh) * 2022-11-03 2023-03-24 江苏奥首材料科技有限公司 一种用于三五族半导体化合物光刻胶的剥离剂、其制备方法及用途
TWI861658B (zh) * 2022-12-30 2024-11-11 達興材料股份有限公司 清潔組合物、清洗方法和半導體製造方法
JP7765673B1 (ja) * 2024-07-22 2025-11-06 花王株式会社 樹脂マスク剥離剤組成物

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5759973A (en) * 1996-09-06 1998-06-02 Olin Microelectronic Chemicals, Inc. Photoresist stripping and cleaning compositions
JP3968535B2 (ja) * 1997-08-29 2007-08-29 三菱瓦斯化学株式会社 半導体素子の製造方法
JP3300643B2 (ja) 1997-09-09 2002-07-08 株式会社東芝 半導体装置の製造方法
JP4120714B2 (ja) * 1998-02-10 2008-07-16 三菱瓦斯化学株式会社 半導体素子の製造方法
US6225030B1 (en) * 1998-03-03 2001-05-01 Tokyo Ohka Kogyo Co., Ltd. Post-ashing treating method for substrates
US6417112B1 (en) * 1998-07-06 2002-07-09 Ekc Technology, Inc. Post etch cleaning composition and process for dual damascene system
US6348239B1 (en) * 2000-04-28 2002-02-19 Simon Fraser University Method for depositing metal and metal oxide films and patterned films
JP2000091269A (ja) 1998-09-10 2000-03-31 Fujitsu Ltd 半導体装置の製造方法
JP3671389B2 (ja) * 1999-12-03 2005-07-13 三菱電機株式会社 基板処理方法および装置
KR100708491B1 (ko) * 1999-08-26 2007-04-16 브레우어 사이언스 인코포레이션 듀얼 다마신 공정을 위한 개선된 충전 조성물을 포함하는 기판구조체, 충전조성물의 도포방법, 충전조성물의 적합성 결정방법, 및 전구체 구조체
JP3389166B2 (ja) * 1999-09-10 2003-03-24 日本電気株式会社 レジスト用剥離液組成物
JP3298628B2 (ja) * 1999-09-10 2002-07-02 日本電気株式会社 半導体装置の製造方法
US6413923B2 (en) * 1999-11-15 2002-07-02 Arch Specialty Chemicals, Inc. Non-corrosive cleaning composition for removing plasma etching residues
JP3615979B2 (ja) 2000-01-18 2005-02-02 株式会社ルネサステクノロジ 半導体装置及びその製造方法
JP3339575B2 (ja) * 2000-01-25 2002-10-28 日本電気株式会社 剥離剤組成物および剥離方法
JP2001290287A (ja) 2000-04-10 2001-10-19 Mitsubishi Electric Corp フォトレジスト除去方法
KR100360985B1 (ko) 2000-04-26 2002-11-18 주식회사 동진쎄미켐 레지스트 스트리퍼 조성물
JP2001338978A (ja) 2000-05-25 2001-12-07 Hitachi Ltd 半導体装置及びその製造方法
US6410437B1 (en) 2000-06-30 2002-06-25 Lam Research Corporation Method for etching dual damascene structures in organosilicate glass
JP2002110788A (ja) 2000-09-27 2002-04-12 Toshiba Corp 半導体装置およびその製造方法
US6599370B2 (en) 2000-10-16 2003-07-29 Mallinckrodt Inc. Stabilized alkaline compositions for cleaning microelectronic substrates
JP2002231696A (ja) 2001-01-31 2002-08-16 Mitsubishi Electric Corp レジスト除去方法とその装置
US20040256358A1 (en) * 2001-11-02 2004-12-23 Hidetaka Shimizu Method for releasing resist
JP2003140364A (ja) 2001-11-02 2003-05-14 Mitsubishi Gas Chem Co Inc 銅配線基板向けレジスト剥離液
US20030138737A1 (en) * 2001-12-27 2003-07-24 Kazumasa Wakiya Photoresist stripping solution and a method of stripping photoresists using the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI402377B (zh) * 2005-08-25 2013-07-21 Dongjin Semichem Co Ltd 用於去除透明導電膜及光阻劑的剝離液組合物
TWI425324B (zh) * 2005-12-23 2014-02-01 安集微電子有限公司 可去除光阻層之組合物
TWI721833B (zh) * 2019-03-25 2021-03-11 日商松下知識產權經營股份有限公司 阻劑剝離液

Also Published As

Publication number Publication date
KR20050006191A (ko) 2005-01-15
AU2003235130A1 (en) 2003-11-10
US20070298619A1 (en) 2007-12-27
WO2003091806A1 (fr) 2003-11-06
KR100781925B1 (ko) 2007-12-04
US20110000874A1 (en) 2011-01-06
US20080280452A1 (en) 2008-11-13
JP3516446B2 (ja) 2004-04-05
JP2004029696A (ja) 2004-01-29
EP1550912A1 (en) 2005-07-06
US20050176259A1 (en) 2005-08-11
EP1550912A4 (en) 2006-09-06
TWI304525B (https=) 2008-12-21
CN1650235A (zh) 2005-08-03
US20090291565A1 (en) 2009-11-26
US8354215B2 (en) 2013-01-15

Similar Documents

Publication Publication Date Title
TW200307186A (en) Method for removing photoresist
JP3410403B2 (ja) ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
KR100844051B1 (ko) 양이온성 염을 포함하는 잔류물 제거용 조성물 및 이를사용하는 방법
TWI308676B (https=)
US20080242575A1 (en) Treating liquid for photoresist removal, and method for treating substrate
TW563005B (en) Photoresist stripping solution and a method of stripping photoresists using the same
JP4814356B2 (ja) はく離及び洗浄用の組成物並びにそれらの使用
CN101187789B (zh) 去除光致抗蚀剂、蚀刻残余物和barc的配制料
JP3514435B2 (ja) ホトレジスト用剥離液およびこれを用いたホトレジスト剥離方法
JP3738992B2 (ja) ホトレジスト用剥離液
CN1402090A (zh) 光刻胶用剥离液和使用该剥离液的光刻胶剥离方法
KR20100076999A (ko) 포토레지스트 박리를 위한 화합물
TWI353381B (en) Non-aqueous, non-corrosive microelectronic cleanin
JP4463054B2 (ja) ホトレジスト用剥離液およびこれを用いた基板の処理方法
JP2003114540A (ja) 剥離剤組成物
JP2001022095A (ja) ポジ型レジスト用剥離液
JP2001022096A (ja) ポジ型レジスト用剥離液
JP2006152303A (ja) 残留物を除去するための組成物及び方法
TWI577793B (zh) Preparation method of stripping liquid and pattern for photolithography etching
JP2004177669A (ja) シリコン含有２層レジストの剥離除去方法及びこれに用いる洗浄液

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees